Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
  • H01L33/50—Wavelength conversion elements
  • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/005—Processes
  • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
  • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
  • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
  • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
  • H01L33/26—Materials of the light emitting region
  • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
  • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
  • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package

Definitions

• the present invention relates to artificial illumination, and in particular relates to solid state lamps that produce white light.
• Artificial lighting for illumination purposes is incorporated in a wide variety of environments.
• Major categories include office lighting, home lighting, outdoor lighting for various purposes, signage, indicators, and many others, hi the age of modern electricity, the common forms of artificial lighting include (but are not limited to) incandescent, halogen vapor, and fluorescent.
• AU of these have particular advantages and disadvantages, but in certain aspects and they all use relatively large amounts of electricity compared to their light output, and all tend to have obviously finite lifetimes.
• the incandescent lamp has been in use in its present form for almost a century, making it one of the longest lived of modern inventions to remain in an early form, hi comparison most other early electronic technologies have been replaced by digital electronic counterparts.
• LED light emitting diode
• GaAsP gallium arsenide phosphide
• these materials have a bandgap of between about 1.42 and 1.98 electron volts (eV), and will emit light in the infrared, red and orange portions of the electromagnetic spectrum.
• materials such as silicon carbide (SiC), gallium nitride (GaN), or the related Group III nitride compounds, have wider bandgaps of about 3.0 and about 3.5 eV respectively, and thus generate photons of higher frequency in the blue, violet, and ultraviolet portions of the spectrum.
• LEDs Because of their reliability, efficiency and relatively low power demands, solid- state light-emitting devices have gained wide acceptance for a number of applications. Because the devices are relatively small, however, and comparatively less bright than more conventional alternatives (incandescent, florescent) their greatest use has been as indicators and other low brightness applications rather than for illumination. [0007] Additionally, some of the LED properties that are favorable in many circumstances (e.g., emission along a narrow band of wavelengths), tend to make LEDs initially less attractive for illumination purposes. For example, LEDs cast only a narrow range of wavelengths.
• higher frequency emitting diodes e.g., in the ultraviolet, violet and blue range
• phosphors typically yellow- emitting
• the efficiency of a light emitting diode can be characterized in numerous manners, but in general is dependent upon several factors which in practice become cumulative in their positive or negative aspects. For example, for any given amount of current injected into a light emitting diode, some fraction less than 100% of the injected carriers (electrons or holes) will actually recombine. Of those that recombine, another fraction less than 100% will generate photons.
• the invention is a high efficiency high output white light emitting solid-state lamp with an output of at least 75 lumens per watt at 20 milliamps drive current.
• the invention includes a light emitting diode, an encapsulant, and a header.
• the diode includes a conductive silicon carbide substrate for electrical contact and a Group III nitride active portion on the silicon carbide substrate for generating desired frequency photons under the application of current across the diode.
• the header includes a reflective cup for supporting the diode and for providing electrical contact to the diode and to the active portion.
• the encapsulant includes a phosphor, present in at least portions of the encapsulant for generating responsive frequencies when the phosphor is excited by the frequencies emitted by the diode.
• the invention is a packaged light emitting diode lamp that demonstrates at least 57 lumen per watt of white light at an operating current of 350 milliamps.
• the lamp includes a conductive header and a light emitting diode on the header.
• the diode includes a silicon carbide substrate, at least one active layer of indium gallium nitride, ohmic contacts in a vertical orientation with respect to said substrate and said active layer, and with the ohmic contact to the active layer being in electrical contact with the header.
• An encapsulant covers the diode and at least portions of the header.
• a phosphor in the encapsulant emits visible light in response to the emission from said diode.
• the invention is a packaged light emitting diode lamp that demonstrates at least 142 lumen per watt of white light at an operating current of 1 amp.
• the invention is a white light emitting diode-based lamp that includes a light emitting diode that emits in a portion of the spectrum selected from the ultraviolet, blue, and violet portions of the electromagnetic spectrum.
• a dimpled header supports the diode, the dimple having a shape that maximizes the extraction of light from the diode in the dimple.
• a first portion of an encapsulating resin covers the diode in the dimple but does not fill the remainder of the dimple.
• a second portion formed of a mixture of the encapsulating resin with a phosphor fills the remainder of the dimple to thereby separate the phosphor containing portion sufficiently from the diode to prevent the diode from absorbing light from the phosphor that can otherwise be extracted.
• a lens is on the filled dimple and formed of the encapsulating resin for increasing and maximizing the extraction of light from the lamp..
• the invention is a method of forming a high efficiency white emitting semiconductor-based lamp.
• the method includes the steps of forming a cup-shaped dimple into a header base for providing electrical contact and a reflective background and structure, positioning a high frequency light emitting diode in the dimple and electrically connecting the diode to an isolated lead, partially filling the dimple cup with a sufficient encapsulation material to cover the chip without filling the cup, curing the partially filled encapsulation material, filling the remainder of the cup with a mixture of the encapsulation material and a phosphor responsive to the frequency produced by the diode to thereby separate the phosphor from direct contact with the diode to thereby minimize the diode's absorption of phosphorescent light, curing the remaining encapsulation material in the cup, forming a solid lens of encapsulation material on the cured material in the cup to enhance the extraction of light from the diode, and curing the lens material to form the finished lamp.
• Figure 1 is a schematic cross-sectional view of a portion of a lamp according to the present invention.
• Figure 2 is a top plan view of a die cup for diode lamps according to the present invention.
• Figure 3 is a cross-sectional view taken along lines 3-3 of Figure 2.
• Figure 4 is a cross-sectional schematic view of a slug-type lamp package according to the present invention.
• Figure 5 is a cross-sectional schematic view of a cup-type package of a diode lamp according to the present invention.
• Figure 6 is a combined plot of efficiency and flux as against current for a lamp according to the present invention.
• Figure 7 is a plot of the CIE diagram color points of lamps according to the present invention with a black body curve superimposed.
• Figure 8 is a plot of intensity versus wavelength for a lamp according to the present invention.
• Figure 9 is another plot of efficiency and flux plot against current for a lamp according to the present invention.
• Figure 10 is a plot of the CEE color points of another embodiment of the lamp according to the present invention.
• Figures 11 and 12 are respective version of the CIE diagram.
• the present invention is a high efficiency white light emitting solid-state lamp. Lamps according to the invention are characterized by an output of at least 75 lumens per watt (W) at 20 milliamps (mA) drive current.
• the luminous flux measurements are photometry units and are measured in lumens.
• the corresponding, although not identical radiometry measurement is the radiant flux measured in watts.
• the efficiency is expressed herein as the luminous flux per watt, based upon the current across the diode, most frequently expressed herein in milliamps.
• the term "external quantum efficiency" is used to describe the ratio of emitted light intensity to current flow (e.g., photons out/electrons in).
• EQE (%) (radiant flux) x (wavelength) x 100 (1240) x (drive current)
• the lamp includes a light emitting diode (also referred to as the "die” or the "chip"), an encapsulant, and a header.
• the diode includes a conductive silicon carbide substrate for electrical contact and a Group III nitride active portion on the silicon carbide substrate for generating desired frequency photons under the application of current across the diode.
• the header includes a reflective cup for supporting the diode and for providing electrical contact to the diode and to the active portion.
• At least portions of the encapsulant include a phosphor for generating responsive frequencies in the visible spectrum when the phosphor is excited by the frequencies emitted by the diode.
• Figure 1 is a schematic diagram illustrating some of these features.
• the diode is broadly designated at 20.
• the light emitting diode is broadly designated at
• Figure 3 illustrates these elements in top plan orientation.
• the dimple 22 has a functional shape that maximizes the extraction of light from the diode 21.
• the dimple 22 has a frustoconical shape; i.e. a circular floor facing a parallel and larger circular opening 26 with slanted walls 27 between the opening 26 and the floor 25.
• the exact angle of the wall 27 can be selected and designed for maximum extraction of light from individual chip designs, but in the invention the walls are most preferably oriented at angles of between about 45 and 60 degrees with respect to the floor 25.
• the dimpled cup 22 is coated with a reflective metal, most preferably silver (Ag).
• the encapsulant has three portions.
• the first portion of the encapsulant typically an epoxy resin, is indicated at 30 and fills some, but not all, of the cup 22. Specifically, the first portion covers and extends above the diode 21.
• a second portion of the encapsulant 31 is formed of a mixture of a resin (usually the same resin, for optical purposes) with a phosphor. This second portion fills the remainder of the cup 22 to thereby separate the phosphor containing portion 31 sufficiently from the diode 21 to minimize the amount of phosphor-emitted light absorbed into the diode (and therefore wasted).
• the diode is merely an obstacle to emitted light. Separating the diode from the phosphor minimizes this otherwise undesired effect.
• a third portion of the encapsulant 32 forms a lens, in many cases in the shape of a hemisphere, on the filled cup 22 for maximizing and increasing the extraction of light from the lamp.
• the lamp 20 can produce an output of at least 75 lumens per watt at 20 milliamps drive current, in some cases 80 lumens per watt at 20 milliamps drive current, and in some cases at least 85 lumens per watt at 20 milliamps drive current.
• diodes according to the invention have demonstrated at least 57 lumens per watt of white light at an operating current of 350 milliamps, and have also demonstrated at least 142 lumens per watt of white light at an operating current of 1 amp.
• the diode 21 is in the nature of, although not limited to, the XT290 and XB900 series of light emitting diodes available from Cree Inc. of Durham North Carolina, the assignee of the present invention. These diodes include a conductive silicon carbide substrate illustrated at 33 in Figure 1, combined with at least one p-type Group III nitride layer 34 and at least one n-type Group III nitride layer 35, preferably InGaN.
• the XT290 chip has a footprint of 300 by 300 microns ( ⁇ ) with a thickness of about 115 ⁇ .
• the XB900 chip is significantly larger, having a footprint of 900 by 900 ⁇ and a thickness of about 250 ⁇ . Accordingly, the XB900 chip represents more of a "power" design, although the use of this term is somewhat arbitrary.
• the larger size of the XB900 makes it an attractive candidate for general illumination, including task lighting, outdoor illumination and traffic colors, while the smaller size of the XT290 chip makes it useful for lower- voltage applications such as back lighting in cellular phones, digital cameras, dashboard lighting, and display lighting on audio and video devices.
• the XB900 series can operate at a 400 milliamps forward current with a peak forward current of 500 milliamps, while the smaller XT290 chip has a maximum forward current rating of 30 milliamps and a peak forward current of 100 milliamps.
• the chip 21 is in a "flip-chip" orientation in which the substrate 33 faces upwardly (toward the lens 32) while the active layers 34 and 35 are adjacent the cup 22.
• this design can help increase light extraction.
• the silicon carbide substrate is usually n-type as is the adjacent Group III nitride layer 35.
• the other Group III nitride layer 34 is thus p-type to form the p-n junction for injecting current and recombining carriers.
• the p-type layer 34 is in contact with the ohmic contact 37 and then with the cup 22.
• Lead wires 40 and 41 are schematically included in the figures to show the means for an external connection with other devices or circuits.
• Group III nitride layers although described herein is being "on" silicon carbide substrates, are often accompanied by buffer layers that enhance both the electronic and crystal structure transition between the substrate and the active layers.
• the p-type layer of these diodes is typically formed in two parts, with one part being more suited for enhancing the ohmic contact between the semiconductor and the metal that forms the contact.
• the diode 21 has a total dimension between and including the ohmic contacts 36 and 37 of no more than about 250 microns ( ⁇ ). In further preferred embodiments, these dimensions are no more than 100 microns.
• the invention incorporates thin ohmic contacts that preferably have an average thickness of between about one and 250 angstroms (A) and most preferably between about one and 10 A.
• the phosphor that is included in the second resin portion 31 is selected to emit responsive frequencies in the yellow portion of the visible spectrum when excited by emissions from the diode in the ultraviolet, violet or blue portions of the electromagnetic spectrum.
• Cesium yttrium aluminum garnet (“Ce:YAG,” Y 3 Al 5 0 12 :Ce +3 ) is an appropriate phosphor for this purpose.
• phosphors including yellow/green emitting phosphors responsive to diodes useful in the present invention are set forth, by way of example and not limitation, in Paragraphs 51-69 and 74-75 of commonly assigned United States Patent Application Publication number US 2004/0012027.
• the proportional amount of phosphor mixed with the encapsulant can be determined by those of ordinary skill in this art without undue experimentation. As generally recognized in this art, the goal is to maximize the amount of converted light, while concurrently minimizing the amount of light that is merely blocked by the phosphor, and avoiding interfering with the structural integrity of the encapsulant. Appropriate amounts can be selected by those of ordinary skill in this art and without undue experimentation.
• the physical size of the phosphor particles can affect (advantageously or disadvantageously) the efficiency of both the phosphor's conversion of the light from the diode and the extraction of the phosphorescent light from the lamp package, hi preferred embodiments of the invention, the size of the phosphor particles can be selected by those of skill in this art without undue experimentation, but were preferably in an average size range of between about 0.001 microns and 20 microns per particle.
• the encapsulant can also include a scattering material, the nature and function of which is generally well understood in this art. A relevant explanation is set forth in U.S. Patent Application Publication No. 20040012027 at Paragraphs 101 and 102.
• Figure 8 is a spectrum taken from a diode according to the present invention and shows the diode's emission at about 455 nanometers (nm), along with a relatively broad range of emissions (about 490-700 nm) emitted by the phosphor.
• Figures 2 and 3 illustrate the header 24 and the cup 25 in top plan and cross- sectional orientations. With particular reference to Figure 3, and in exemplary embodiments, the diameter of the floor 25 is approximately 0.064 inch (0.163 cm), the diameter of the opening 26 is approximately 0.124 inch (0.315 cm), the depth of the cup 22 is approximately 0.030 inch (0.76 cm), and the walls 27 are oriented at a 45° angle.
• FIGS. 4 and 5 are additional cross-sectional schematic views of lamps according to the present invention.
• Figure 4 illustrates a slug type package broadly designated at 44.
• the encapsulant is shown as a single portion 45 although it will be understood that it forms the same three portions shown in more detail in Figure 1.
• the diode is again broadly designated at 21, the cup is broadly designated at 22 and the header at 24.
• Figure 4 also illustrates the lead wires 40 and 41.
• Figure 5 illustrates a cup-type package broadly designated at 47 with the encapsulant 50 completely surrounding the header cup which for distinguishing purposes is designated at 51. It will again be understood that the encapsulant 50 is formed of three portions, the first portion in the cup covering the diode 21, the second portion filling the remainder of the cop and being mixed with the phosphor, and the third portion that forms the lens. In a manner consistent with Figures 1 and 4, Figure 5 also illustrates the electrical lead wires 40 and 41.
• Figures 6 through 10 illustrate some performance characteristics of the diodes and lamps according to the present invention.
• Figures 6, 7 and 8 plot data for high efficiency XT290-based white lamps according to the present invention, while Figures 9 and 10 plot similar data for the XB900-based white lamps according to the invention.
• Figure 6 plots two different ordinates against a common abscissa. The left ordinate plots efficacy (efficiency) in lumens per watt and is indicated by the open squares and connecting lines. The right ordinate plots the output flux measured as lumens and is indicated by the black diamonds and connecting lines. Because the respective lines are plotted against two different ordinates, the apparent convergence of the lines in Figure 6 has no particular relevance.
• Figure 7 is a plot of the emission of a plurality of white emitting lamps according to the present invention plotted using the x and y coordinates from the CIE color chart ( Figures 11 and 12). All of the lamps had an efficiency of at least 75 lumens per watt and are shown in comparison to a black body curve.
• Figure 8 is a plot of intensity in arbitrary units plot against wavelength in nanometers (nm) for a lamp according to the present invention. Figure 8 illustrates the characteristic sharp emission of the diode at 455 nanometers and the broader emission of the phosphor over a range of frequencies of between about 500 and 700 nm.
• Figure 9 is a plot similar to Figure 6 except taken from lamps using the XB900 diodes.
• Figure 9 plots lumens (the dark squares) and lumens per watt (the black diamonds) on the same axis, again by coincidence. Thus, the intersection of the two plots is again coincidental.
• Figure 10 is a plot similar to Figure 7, except using the larger footprint XB900 diodes.
• Figure 10 again compares the output of the white light from lamps according to the invention in terms of CJE coordinates and in comparison to a black body curve.
• Figures 11 Luminal Path Corporation, www.photo.net
• 12 Computer Graphics, FS Hill
• Figure 12 is helpful from a graphics standpoint because the various colors are plotted by lines and letters rather than by shaded areas.
• the invention is a method of forming a high efficiency white emitting semiconductor based lamp, hi this aspect, the method comprises forming a cup-shaped dimple into a header to provide electrical contact and a reflective background structure.
• a high frequency light emitting diode that emits within higher frequencies e.g. ultraviolet, violet and blue
• the dimple cup is then partially filled with a (clear/transparent/suitable) encapsulation material (usually colorless and substantially transparent to most visible frequencies) in an amount sufficient to cover the chip but without filling the cup.
• a (clear/transparent/suitable) encapsulation material usually colorless and substantially transparent to most visible frequencies
• the partially filled encapsulation material is cured following which the remainder of the cup is filled with a mixture of the encapsulation material and a phosphor responsive to the frequency produced by the diode. This separates the phosphor from direct contact with the diode and thereby minimizes the diode's absorption of phosphorescent light in operation.
• the remaining encapsulation material in the cup is cured, following which the three-dimensional geometric solid lens of encapsulation material is formed on the cured material in the cup.
• the diode placed in the cup preferably includes at least the conductive silicon carbide substrate and at least one active portion of a Group III nitride in a vertical orientation.
• the term "vertical" is used herein in its conventional sense with respect to light emitting diodes and means that the ohmic contacts to the device can be placed at opposite ends of the device.
• the availability of the conductive silicon carbide substrate enables the vertical orientation which is generally more suitable for practical use of light emitting diodes then are the orientations required for similar diodes formed on nonconductive substrates such as sapphire (Al 2 O 3 ).
• nonconductive substrates such as sapphire (Al 2 O 3 ).
• the respective ohmic contacts to the p-type and n-type portions of the diode must be positioned in some type of lateral arrangement with respect to one another, thus increasing the diode's footprint.
• the method aspects of the invention incorporates etching the face of the silicon carbide substrate that is opposite to the Group III nitride layer using an aqueous etch to remove damaged portions of the substrate and thereby increase light extraction from the resulting diode and the lamp.
• the resin used for the encapsulation in each step is preferably an epoxy resin that has a refractive index greater than 1.0 and more preferably greater than 1.5.
• the lens material has a refractive index greater than air, the lens extracts more light from the diode than would be the case if the diode was in contact with air.
• the lens structure can also be modified in the manner set forth in commonly assigned U.S. Patent No. 6,791,119.
• the encapsulant can be mounted in the manner, and formed of a material, described in co-pending and commonly assigned United States Patent Application Publication No. 2004/0227149.
• the diode portion of the lamp according to the present invention can also incorporate the improved current spreading structures set forth in commonly assigned U.S. Patent No. 6,614,056.
• a key component of the invention is the performance of the blue (455-465 rnn) LED chip, whose wall plug efficiency (combination of external quantum efficiency and voltage) has to be high to achieve the white lamp performance stated here.
• typical external quantum efficiency and voltage were 44% and 3.1 V, respectively.
• typical external quantum efficiency and voltage were 31% and 3.2 V, respectively. In both cases, data were for packaged (i.e. encapsulated) chips.
• the wall plug efficiency of an LED is the product of the injection efficiency of the LED (the ratio of the numbers of carriers injected into the device to the number of carriers that recombine in the light- generating region of the device), the radiative efficiency of the LED (the ratio of electron-hole recombinations that result in a radiative event to the total number of electron-hole recombinations), and the extraction efficiency of the LED (the ratio of photons that are extracted from the LED to the total number of photons created).
• the wall plug efficiency of a device is also defined as the ratio of optical watts out to electrical watts put into the device.
• An XT290 chip was mounted on a T039 header that was Ag-plated.
• a cup- shaped dimple had been machined into the header base; the chip was placed in the center of the base of the dimple.
• the cup was partially filled with a clear encapsulation material, which covered the chip but did not fill the cup.
• OS 1600 clear epoxy from Henkel LocTite Corporation, Rocky Hill Connecticut
• the remainder of the cup was filled with a mixture of Ce: YAG phosphor (from PhosphorTech Corporation Lithia Springs, GA 30122) and OS1600 epoxy, followed by a second cure.
• the Ce:YAG phosphor concentration was chosen to yield a color-point close to black body curve. Then the header was placed chip-down into a hemispherical mold filled with more OS 1600 epoxy, then cured for a third and final time. Finished lamps were characterized in a 10" integrating sphere (Labsphere), which is calibrated to a NIST traceable light source. At a drive current of 20 mA, the luminous flux of the lamps exceeded 5 lumens with an efficacy of 75 lumens per watt or higher.
• an XB900 chip was mounted on a T039 header that was Ag- plated.
• a cup shape dimple had been machined into the header base; the chip was placed in the center of the base of the dimple.
• the cup was partially filled with a clear encapsulation material, which covers the chip but does not fill the cup.
• OS 1600 clear epoxy was used for the encapsulation.
• the remainder of the cup was filled with a mixture of Ce: YAG phosphor and OS 1600 epoxy, followed by a second cure. Then the header was placed chip-down into a hemispherical mold filled with more OS 1600 epoxy, then cured for a third and final time.
• the Ce:YAG phosphor concentration was chosen to yield a color-point close to black body curve. Then the header was placed chip-down into a hemispherical mold filled with more OS 1600 epoxy, then cured for a third and final time. Finished lamps were characterized in a 10" integrating sphere. At a drive current of 350 mA, the luminous flux of the lamps exceeded 60 lumens with an efficacy of 50 lumens per watt or higher.
• an XT290 chip was mounted in a standard 5 mm lead-frame cup. Phosphor and encapsulation material were added in a similar manner to the header lamps described above. Following the second cure, the lead- frame was placed in a bullet shaped mold and overmolded with clear encapsulant. The luminous efficacy of such lamps exceeded 75 lumens per watt.

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• 2005
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