TWI279929B - High efficacy white LED - Google Patents

High efficacy white LED Download PDF

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Publication number
TWI279929B
TWI279929B TW94131904A TW94131904A TWI279929B TW I279929 B TWI279929 B TW I279929B TW 94131904 A TW94131904 A TW 94131904A TW 94131904 A TW94131904 A TW 94131904A TW I279929 B TWI279929 B TW I279929B
Authority
TW
Taiwan
Prior art keywords
diode
light
lamp
cup
ohmic contact
Prior art date
Application number
TW94131904A
Other languages
English (en)
Chinese (zh)
Other versions
TW200642117A (en
Inventor
James Ibbetson
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Publication of TW200642117A publication Critical patent/TW200642117A/zh
Application granted granted Critical
Publication of TWI279929B publication Critical patent/TWI279929B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
TW94131904A 2005-05-20 2005-09-15 High efficacy white LED TWI279929B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68302705P 2005-05-20 2005-05-20

Publications (2)

Publication Number Publication Date
TW200642117A TW200642117A (en) 2006-12-01
TWI279929B true TWI279929B (en) 2007-04-21

Family

ID=35521157

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94131904A TWI279929B (en) 2005-05-20 2005-09-15 High efficacy white LED

Country Status (4)

Country Link
JP (2) JP2008541477A (ja)
DE (1) DE112005003581T5 (ja)
TW (1) TWI279929B (ja)
WO (1) WO2006127030A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324923B2 (en) 2008-03-07 2016-04-26 Intermatix Corporation Multiple-chip excitation systems for white light emitting diodes (LEDs)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7968900B2 (en) * 2007-01-19 2011-06-28 Cree, Inc. High performance LED package
EP2164302A1 (de) 2008-09-12 2010-03-17 Ilford Imaging Switzerland Gmbh Optisches Element und Verfahren zu seiner Herstellung
TWI398966B (zh) * 2009-06-08 2013-06-11 Epistar Corp 發光元件及其製造方法
US20110309393A1 (en) * 2010-06-21 2011-12-22 Micron Technology, Inc. Packaged leds with phosphor films, and associated systems and methods
EP2638600A4 (en) * 2010-11-08 2018-01-03 Bae Systems Australia Limited Antenna system
US8986842B2 (en) 2011-05-24 2015-03-24 Ecole Polytechnique Federale De Lausanne (Epfl) Color conversion films comprising polymer-substituted organic fluorescent dyes

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2001622A (en) * 1930-10-27 1935-05-14 David G Mccaa Method of and means for reducing electrical disturbances
US7053419B1 (en) * 2000-09-12 2006-05-30 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
JP3872327B2 (ja) * 2000-12-04 2007-01-24 日本碍子株式会社 半導体発光素子
US6791119B2 (en) * 2001-02-01 2004-09-14 Cree, Inc. Light emitting diodes including modifications for light extraction
US6924596B2 (en) * 2001-11-01 2005-08-02 Nichia Corporation Light emitting apparatus provided with fluorescent substance and semiconductor light emitting device, and method of manufacturing the same
JP2005530349A (ja) * 2002-06-13 2005-10-06 クリー　インコーポレイテッド 飽和変換材料を有するエミッタパッケージ
JP4281044B2 (ja) * 2002-06-18 2009-06-17 財団法人名古屋産業科学研究所 微小部品の配置方法
JP4221649B2 (ja) * 2002-09-02 2009-02-12 スタンレー電気株式会社 波長変換素子並びにその製造方法
US6917057B2 (en) * 2002-12-31 2005-07-12 Gelcore Llc Layered phosphor coatings for LED devices
JP4366161B2 (ja) * 2003-09-19 2009-11-18 スタンレー電気株式会社 半導体発光装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9324923B2 (en) 2008-03-07 2016-04-26 Intermatix Corporation Multiple-chip excitation systems for white light emitting diodes (LEDs)

Also Published As

Publication number Publication date
JP2008541477A (ja) 2008-11-20
WO2006127030A1 (en) 2006-11-30
DE112005003581T5 (de) 2008-04-03
JP2011176350A (ja) 2011-09-08
TW200642117A (en) 2006-12-01

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