WO2006106091A1 - Source de photons comprenant une source ecr dotee de miroirs - Google Patents

Source de photons comprenant une source ecr dotee de miroirs Download PDF

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Publication number
WO2006106091A1
WO2006106091A1 PCT/EP2006/061263 EP2006061263W WO2006106091A1 WO 2006106091 A1 WO2006106091 A1 WO 2006106091A1 EP 2006061263 W EP2006061263 W EP 2006061263W WO 2006106091 A1 WO2006106091 A1 WO 2006106091A1
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WO
WIPO (PCT)
Prior art keywords
mirror
chamber
plasma
photon source
source according
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Application number
PCT/EP2006/061263
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English (en)
Inventor
Denis Hitz
Marc Delaunay
Etienne Quesnel
Cyril Vannuffel
Original Assignee
Commissariat A L'energie Atomique
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Filing date
Publication date
Application filed by Commissariat A L'energie Atomique filed Critical Commissariat A L'energie Atomique
Publication of WO2006106091A1 publication Critical patent/WO2006106091A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/003—Production of X-ray radiation generated from plasma the plasma being generated from a material in a liquid or gas state

Definitions

  • This invention relates to a photon source and more particularly a photon source comprising an electron cyclotron resonance (ECR) multicharged ion plasma source, more commonly called an ECR source.
  • ECR electron cyclotron resonance
  • one application of the photon source according to the invention is the production of EUV (Extreme Ultra-Violet) photons that can be used for lithography.
  • EUV Extra-Violet
  • the EUV photon sources most frequently used for lithography needs are either plasma sources, plasmas being produced by a laser, or cathode discharge sources. These sources have good brightness, but they can only work in pulsed mode. Furthermore, problems arise related to the presence of debris. It is also known that a synchrotron can be used despite the high cost of the installation.
  • ECR electron cyclotron resonance
  • Ionisation in an ECR source takes place step by step.
  • the first step to obtain Xe 10+ ions is to produce Xe + ions, then Xe 2+ ions, etc., until Xe 10+ ions are obtained.
  • the time to obtain Xe 10+ ions is of the order of a few ms and the plasma has to be confined for long enough to obtain the required charge state. This time is related both to magnetic configuration of the machine and the size of the plasma; a "large" diameter plasma (for example from 20 to 30 mm) gives more highly charged ions than a "small" diameter plasma in which the ions are lost more quickly.
  • Figure 1 shows a longitudinal sectional view of a photon source that outputs photons by de-excitation of electron cyclotron resonance multicharged ions according to prior art.
  • the photon source comprises a cylindrical plasma vacuum chamber CH with axis AA surrounded by a magnetic structure 1-6.
  • a gas injection device I injects a gas g into the chamber CH and a microwave injection guide GD provided with a sealing window (not shown in the figure) injects microwaves.
  • the microwaves heat the plasma and therefore ionise the gas g.
  • the magnetic structure 1-6 comprises two cylindrical magnetic axial confinement structures [3,4] and [5,6] located at the two ends of the chamber CH and a cylindrical magnetic radial confinement structure [al,a2] located between the two cylindrical magnetic axial confinement structures [3,4] and [5,6].
  • the magnetic radial confinement structure [al,a2] surrounds the chamber CH.
  • the magnetic structure 1-6 thus creates a closed surface ⁇ inside the chamber, with no contact with the walls of the chamber and on which the value of the magnetic field is approximately equal to the value B RCE of the resonance field ECR.
  • the surface ⁇ is generally in the shape of an ellipsoidal of revolution.
  • a multicharged ion plasma is formed inside the surface ⁇ .
  • the ions created are excited after a large number of collisions. They are de-excited by emitting photons ph. The photons ph are emitted in all directions.
  • Pumping means P are positioned at the output from the source to evacuate electrically neutral particles present in the chamber.
  • the power output by the photon source is low.
  • the size of the photon source located at the object focal point of the lithography equipment is of the order of 1 mm. The result is that in practice it is only possible to use photons emitted precisely along the axis AA. Thus, the useful power emitted is then very low.
  • the invention does not have the disadvantages mentioned above.
  • the invention relates to a photon source comprising an electron cyclotron resonance (ECR) multicharged ion plasma source, the electron cyclotron resonance multicharged ion plasma source comprising a cylindrical plasma vacuum chamber with axis AA, a magnetic structure to create an electron cyclotron resonance magnetic field inside the plasma chamber and an opening formed in the said chamber so that a fraction of the photons emitted by de-excitation of multicharged ions are extracted from the chamber.
  • the photon source comprises at least one mirror that reflects an additional fraction of photons emitted by de-excitation of multicharged ions, the mirror being oriented to direct the additional fraction of photons that it reflects towards the exit opening, and means of protecting the mirror from plasma particle collisions.
  • At least one mirror is a mirror with an optical axis approximately coincident with the axis AA of the chamber and positioned in an area of the cavity on the side of the plasma opposite the opening.
  • the mirror for which the optical axis is approximately coincident with the AA axis of the chamber is a plane mirror .
  • the mirror for which the optical axis is approximately coincident with the AA axis of the chamber is a parabolic mirror.
  • the mirror for which the optical axis is approximately coincident with the AA axis of the chamber is a circular mirror.
  • the radius of curvature of the circular mirror is such that light rays that it reflects intersect at a point located between one end of the plasma located on the same side as the exit opening and the exit opening.
  • photons reflected by the circular mirror are collected at the same time in a concentration area located between one end of the plasma on the same side as the exit opening and the exit opening.
  • the concentration area is an approximately spherical area with a diameter of between 0.5 mm and 2 mm.
  • a photon collector is positioned between the concentration area and the exit opening, and protection means are positioned close to the photon collector to protect the photon collector from plasma particle collisions .
  • the means of protecting the mirror from plasma particle collisions are composed of a magnetic deviation device.
  • the magnetic deviation device is positioned inside the chamber .
  • the magnetic deviation system is positioned outside the chamber.
  • the chamber contains at least one mirror oriented to reflect photons emitted by the plasma along at least one direction perpendicular to the axis of the chamber.
  • the optical axis of the mirror oriented to reflect photons emitted by the plasma along at least one direction perpendicular to the axis of the chamber is perpendicular to the axis of the chamber.
  • the mirror oriented to reflect photons emitted by the plasma along at least one direction perpendicular to the axis of the chamber is oriented so that a fraction of the photons that it reflects passes through an area of the chamber included between one end of the plasma located on the side of the exit opening and the exit opening.
  • the mirror oriented to reflect photons emitted by the plasma along at least one direction perpendicular to the axis of the chamber is made of MoSi.
  • the chamber contains at least one set of two mirrors oriented to reflect photons emitted along at least one direction perpendicular to the axis of the chamber, the two mirrors being symmetric to each other about the axis of the chamber.
  • the mirror oriented to reflect photons emitted by the plasma along at least one direction perpendicular to the axis of the chamber is unique and entirely surrounds the plasma.
  • the magnetic structure to create an electron cyclotron resonance magnetic field comprises a magnetic structure with radial confinement of the magnetic field, composed of superconducting magnets that surround the chamber.
  • the magnetic structure to create an electron cyclotron resonance magnetic field comprises a magnetic structure with radial confinement of the magnetic field, positioned in an enclosure at atmospheric pressure inside the chamber.
  • the magnetic structure with radial confinement of the magnetic field is a multipole structure composed of N magnets uniformly distributed on a circular ring, where N is an even number greater than or equal to 2.
  • the enclosure at atmospheric pressure is provided with openings to allow photons to pass between magnets.
  • a mirror positioned in the space separating a magnet from the plasma reflects photons at grazing incidence emitted by the plasma.
  • the mirror positioned in the space that separates a magnet from the plasma is made of molybdenum.
  • the mirror (s) oriented to reflect photons emitted by the plasma along at least one direction perpendicular to the axis of the chamber is (are) located beyond the uniformly distributed magnets of the multipole structure with respect to the plasma, and in which the chamber contains means of preventing photons propagating between the magnets of the multipole structure from reaching the mirror (s) oriented to reflect photons emitted along at least one direction perpendicular to the axis of the chamber, under the action of a control signal.
  • the means of preventing photons that propagate between the magnets of the multipole structure from reaching the mirror (s) oriented to reflect photons emitted along at least one direction perpendicular to the axis of the chamber under the action of a control signal comprise a rotating support equipped with mirrors.
  • the chamber contains means controlled by a control signal to prevent photons moving towards the exit opening from being extracted from the source or to enable them to be extracted.
  • the means of preventing photons moving towards the exit opening from being extracted from the source, or enabling them to be extracted comprise an exit mirror in which an opening is formed, the exit mirror being positioned close to the exit opening, the opening formed in the exit mirror facing the exit opening to enable photons to be extracted from the source, and not facing the exit opening to prevent photons from being extracted from the source.
  • a magnetic deviation device protects the exit mirror from plasma particle collisions.
  • the means of preventing photons directed towards the output opening from being extracted from the source, or enabling them to be extracted comprise a shutter.
  • the circumference of the plasma narrows along the axis of the chamber as the distance to the exit opening reduces .
  • the mirror that reflects an additional fraction of the photons emitted by de-excitation of multicharged ions is made of MoSi.
  • the presence of the mirror (s) in the photon source according to the invention can advantageously increase the quantity of photons emitted by the source.
  • One particularly advantageous embodiment of the invention also leads to making a very large number of photons converge within a very small area. For example, this area can then be used as an object focal point for
  • FIG. 1 shows a longitudinal sectional view of a photon source that outputs photons by de- excitation of electron cyclotron resonance multicharged ions according to prior art
  • - figure 2 shows a longitudinal sectional view of a photon source according to a first embodiment of the invention
  • - figures 3a and 3b show a longitudinal sectional view and a partial perspective view respectively of a photon source according to a second embodiment of the invention
  • FIG. 4a and 4b show a longitudinal sectional view and a cross-sectional view respectively of a photon source according to a third embodiment of the invention
  • FIG. 5a and 5b show a longitudinal sectional view and a cross-sectional view respectively of a photon source according to a fourth embodiment of the invention
  • FIG. 6a and 6b show detailed views of two variants of the fourth embodiment of the invention shown in figures 5a and 5b ;
  • FIG. 7 shows a cross-sectional view of a photon source according to a fifth embodiment of the invention.
  • FIG. 8a and 8b show a longitudinal sectional view and a cross-sectional view respectively of a photon source according to a sixth embodiment of the invention
  • FIG. 9 shows a longitudinal sectional view of a first improvement of a photon source according to the invention.
  • FIG. 10a and 10b show two cross-sectional views of a second improvement of a photon source according to the invention.
  • Figure 2 shows a longitudinal sectional view of a photon source according to a first embodiment of the invention .
  • the photon source represented in figure 2 comprises a mirror Ma preferably in line along the AA axis of the chamber CH, a magnetic deviation system [7,8] and a photon collector 9.
  • the mirror Ma is located on the side of the gas injection and the microwaves and reflects photons that it received on its surface towards the exit opening 0.
  • the mirror Ma may be a plane, spherical or parabolic mirror.
  • the mirror Ma is a concave spherical mirror for which the optical axis is coincident with the AA axis of the chamber.
  • the radius of curvature of the mirror Ma is chosen as a function of the dimensions of the chamber such that reflected photons are concentrated in a small area 10 located on the AA axis, beyond the plasma delimited by the surface ⁇ .
  • the photon concentration area 10 may for example be located approximately at the exit opening 0 from the photon source or close to this opening.
  • the area 10 may be spherical in shape with a diameter equal to approximately 1 mm.
  • the mirror Ma may for example be a multilayer mirror made of Silicon /Molybdenum (MoSi) .
  • the magnetic deviation system [7,8] is positioned close to the mirror Ma to deviate charged particles (ions, electrons) that would otherwise be likely to strike it and therefore to damage it due to the configuration of the source.
  • the magnetic deviation system may be positioned outside the chamber CH, as is the case shown in figure 3. It may also be positioned inside the chamber if there is a size problem.
  • the photon collector 9 collects photons output from the concentration area 10. To achieve this, the concentration area 10 is positioned at the focal point of the photon collector 9.
  • the photon collector 9 is advantageously used in the case of a photon emission application in the EUV domain.
  • protection means (1, 2) are positioned at the exit from the photon source to protect the collector 9 from the collision of charged particles (ions, electrons) originating from the plasma. These protection means may for example consist of a magnetic deviation device. After reflection on the mirror Ma, most of the photons pass through the resonance surface ⁇ and consequently through the plasma that it contains.
  • the photons then excite plasma atoms or ions, thus creating a laser effect that produces other photons at the required wavelength.
  • Figures 3a and 3b show a longitudinal sectional view and a partial perspective view respectively of a photon source according to a second embodiment of the invention.
  • the photon source according to the second embodiment of the invention is an optimisation of the photon source according to the first embodiment of the invention .
  • the magnetic radial confinement structure [al,a2] is located inside the chamber CH so as to be brought close to the plasma. Bringing the plasma close to the radial confinement structure [al,a2] in this way is particularly beneficial when the structure is composed of permanent magnets with a fairly small range. This enables creation of a more concentrated plasma close to the AA axis.
  • the plasma diameter is then smaller. In its central part, the plasma circumference may then for example reach a value of between 10 mm and 15 mm.
  • the dimensions of the confinement area 10 can then be reduced. In a manner known in itself, the reduction in the plasma diameter depends on the life of the ions that must remain sufficiently long so that the required ions can appear in sufficient quantity.
  • the cylindrical magnetic radial confinement structure [al,a2] is located inside an enclosure E at atmospheric pressure.
  • the enclosure E is fixed inside the chamber CH.
  • the enclosure E may be provided with openings OV formed between the magnets of the magnetic structure. The openings OV can then improve pumping of neutral particles.
  • the enclosure E does not contain any openings OV.
  • Figures 4a and 4b show a longitudinal sectional view and a cross-sectional view respectively of a photon source according to a third embodiment of the invention .
  • the photon source according to the third embodiment of the invention comprises mirrors positioned between the magnetic radial confinement structure and the plasma.
  • the magnetic radial confinement structure may for example be a six-pole structure composed of six magnets al-a6 uniformly distributed around the surface ⁇ .
  • the magnetic structure is multipole, composed of N magnets al-aN uniformly distributed around the surface ⁇ (N poles) .
  • the magnets al-a6 are distributed on the same circumference, a magnet with North/South orientation alternating with a magnet with South/North orientation.
  • the angle of incidence of a light ray that strikes a plane surface is the angle between the direction of the light ray and the normal to the surface.
  • the mirrors Mri are positioned and sized so as not to meet leakage paths of the plasma for which the trajectories result from the magnetic configuration of the source. If the length of the magnets ai is L along the axis of the chamber, the mirrors Mri may then for example have a length equal to approximately L/2.
  • Mo molybdenum
  • Figures 5a and 5b show a longitudinal section view and a cross-sectional view respectively of a photon source according to a fourth embodiment of the invention .
  • the photon source shown in figures 5a and 5b comprises mirrors Mnl-Mn6 located in the chamber CH, far from the plasma.
  • a mirror located "far from the plasma” means that the mirror is at a distance from the plasma such that practically all photons emitted by the plasma that it reflects are at an angle of incidence, for example, equal to between 0° and 25°.
  • the mirrors Mnl-Mn6 are then arranged uniformly, for example, on the inside wall of the chamber CH, beyond the radial confinement structure al-a6, when this structure is located inside the chamber.
  • the radial confinement structure is positioned inside the chamber CH in an enclosure E at atmospheric pressure, as can be seen in figures 5a and 5b.
  • the enclosure E is then provided with openings OV so that it allows a maximum of photons to pass towards the mirrors Mni.
  • the radial confinement structure is located outside the chamber.
  • the radial confinement structure is composed of permanent magnets, it is preferably located inside the chamber for the reason mentioned above, namely to obtain a finer plasma.
  • the mirrors Mni are oriented such that a fraction of the photons that they reflect passes through an area in the chamber between one end of the plasma located on the side of the exit opening and the exit opening. It is then possible to encourage convergence of the photons that they reflect towards the concentration area 10, as shown in figures 5a and 6a. Photons emitted by the plasma can also be transmitted as far as the concentration area 10 by successive reflections on two mirrors located facing each other (see figure 6a) .
  • the mirrors Mni are not oriented to encourage progression of photons towards the concentration area 10 (see figure 6b) .
  • the optical axis of the mirrors Mni is then perpendicular to the AA axis of the chamber. The photons reflected by a mirror
  • Figure 7 shows a cross-sectional view of a photon source according to a fifth embodiment of the invention.
  • the fifth embodiment of the invention combines the third and fourth embodiments of the invention.
  • the advantages of the third and fourth embodiments of the invention are then combined.
  • Figures 8a and 8b show a longitudinal sectional view and a cross-sectional view respectively of a photon source according to a sixth embodiment of the invention .
  • the particular features of the sixth embodiment of the invention are:
  • the sixth embodiment of the invention includes these four features.
  • the invention also relates to other embodiments in which these features are not always combined, but are taken in isolation or in small groups .
  • the increase in the length of the plasma is obtained in a manner known in itself by separating the two magnetic axial confinement structures [3,4] and [5,6] from each other and consequently increasing the length of the chamber CH. At least one additional axial confinement structure (two in the example shown in figure 8a) is then positioned between the magnetic axial confinement structures [3,4] and [5,6] so as to optimise the minimum value of the magnetic field.
  • the increase in the plasma length advantageously enables a larger number of photons to be emitted along the AA axis of the chamber.
  • the magnetic axial and radial confinement structures are calculated such that the plasma circumference is larger on the gas injection side (for example 10 to 15 mm) than on the photon extraction area side (for example 1 mm) .
  • the mirror Mm is positioned close to the inside wall of the chamber CH.
  • the radius of curvature of the mirror Mm may be equal to 50 mm for a plasma with a circumference equal to 15 mm on the gas injection side.
  • the mirror Mm globally provides a function approximately the same as the function performed previously by all mirrors Mni .
  • the magnetic radial confinement structure is located outside the chamber and not inside it, and consequently does not form an obstacle to propagation of photons.
  • the magnetic radial confinement structure is made from superconducting magnets that can then be positioned far from the plasma.
  • the chamber Ch can then be large compared with the size of the plasma.
  • FIGS 9, 10a and 10b show views of photon sources according to an improvement to the invention.
  • a photon source according to the improvement of the invention includes mobile mirrors. By actuation of the mobile mirrors, the photon source forms a pulsed source .
  • Figure 9 shows a longitudinal sectional view of a first variant of a photon source according to the improvement of the invention.
  • a mobile mirror Mp is positioned on the side of the output opening.
  • the mobile mirror Mp may for example be positioned between the end of the plasma located on the same side as the exit opening and the concentration area 10, as shown in figure 9.
  • the mirror Mp is positioned between the area 10 and the collector 9.
  • the mirror Mp may for example be positioned on a rotating system (not shown in the figure) for which the axis of rotation is offset from the axis of the source. An opening is formed in the mirror.
  • the mirror is positioned for a time ⁇ Tl such that the opening formed in the mirror is offset from the exit opening. Propagation of photons towards the concentration area 10 is then interrupted by reflection on the mirror Mp. Advantageously, photons then accumulate inside the chamber with or without a laser effect. For a time ⁇ T2, the mirror is positioned such that the opening formed in the mirror is in line with the exit opening. The opening formed in the mirror then allows a large photon flux to pass towards the concentration area 10 and consequently towards the output opening 0.
  • the photon source since the photons are accumulated for a time ⁇ Tl, the photon source then sends more photons during time ⁇ T2 than during continuous operation. It is thus possible to make a particularly advantageous photon source in pulsed mode.
  • the shutter may be a shutter like those used in pulsed lasers.
  • the shutter closes the exit opening, it can also be used as a mirror if it is composed of an appropriate material.
  • the protection means (1,2) that protect the collector 9 from plasma particle collisions may also be used to protect the mirror Mp from these same particles. Protection means specifically dedicated to the mirror Mp can also be present. These specific protection means may for example be composed of a magnetic deviation device located inside or outside the chamber.
  • Figures 10a and 10b show two cross sectional views of a second variant of the photon source according to an improvement of the invention.
  • the mirrors Moi are positioned between the magnets al-a6 and the mirrors Mnl-Mn6.
  • the mirror Moi with rank i is then positioned between the plasma and the mirror Mni with rank i.
  • the mirrors Moi are then positioned along the prolongation of the magnets ai (see figure 10b) , facing the faces of the magnets ai that are not facing the plasma. Due to the positions occupied by the mirrors Moi to enable or disable passage of photons between the magnets, the dimensions of the mirrors Moi are determined partly by the width of the magnets. The faces of the magnets in front of which the mirrors Moi are positioned may thus be wider than the faces facing which the mirrors Mri are positioned, as can be seen as a non-limitative example in figures 10a and 10b.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

La présente invention concerne une source de photons qui comprend une source plasma d'ions multichargés à résonance cyclotronique des électrons (ECR), lesdits photons émis par la source provenant de la désexcitation d'ions multichargés et étant extraits de la source par une ouverture de sortie (O), laquelle source de photons se caractérise en ce qu'elle comprend au moins un miroir (Ma) qui réfléchit les photons émis à la suite de la désexcitation d'ions multichargés, le miroir (Ma) étant orienté de façon qu'il dirige la fraction de photons qu'il réfléchit en direction de l'ouverture de sortie (O).
PCT/EP2006/061263 2005-04-06 2006-04-03 Source de photons comprenant une source ecr dotee de miroirs WO2006106091A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0503421 2005-04-06
FR0503421A FR2884350B1 (fr) 2005-04-06 2005-04-06 Source de photons comprenant une source rce equipee de miroirs

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WO2006106091A1 true WO2006106091A1 (fr) 2006-10-12

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013511819A (ja) * 2009-12-01 2013-04-04 コリア ベーシック サイエンス インスティテュート 電子サイクロトロン共鳴イオン源を利用したｘ線発生装置及び方法
US8921814B2 (en) 2012-06-12 2014-12-30 Asml Netherlands B.V. Photon source, metrology apparatus, lithographic system and device manufacturing method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5577090A (en) * 1995-01-12 1996-11-19 Moses; Kenneth G. Method and apparatus for product x-radiation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5577090A (en) * 1995-01-12 1996-11-19 Moses; Kenneth G. Method and apparatus for product x-radiation

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013511819A (ja) * 2009-12-01 2013-04-04 コリア ベーシック サイエンス インスティテュート 電子サイクロトロン共鳴イオン源を利用したｘ線発生装置及び方法
US8921814B2 (en) 2012-06-12 2014-12-30 Asml Netherlands B.V. Photon source, metrology apparatus, lithographic system and device manufacturing method
TWI476811B (zh) * 2012-06-12 2015-03-11 Asml Netherlands Bv 光子源、度量衡裝置、微影系統及元件製造方法
US9357626B2 (en) 2012-06-12 2016-05-31 Asml Netherlands B.V. Photon source, metrology apparatus, lithographic system and device manufacturing method

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FR2884350A1 (fr) 2006-10-13

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