Classifications

• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
  • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
  • C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
  • C08F214/18—Monomers containing fluorine
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F214/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen
  • C08F214/18—Monomers containing fluorine
  • C08F214/186—Monomers containing fluorine with non-fluorinated comonomers
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F232/00—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system
  • C08F232/08—Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double bonds in a carbocyclic ring system having condensed rings
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
  • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
  • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
  • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
  • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
  • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
  • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
  • C08F220/10—Esters
  • C08F220/12—Esters of monohydric alcohols or phenols
  • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
  • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
  • C08F220/1804—C4-(meth)acrylate, e.g. butyl (meth)acrylate, isobutyl (meth)acrylate or tert-butyl (meth)acrylate
• • C—CHEMISTRY; METALLURGY
  • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
  • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
  • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
  • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
  • C08F220/10—Esters
  • C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
  • C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
  • C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate

Definitions

• thermosettable polymers that are also photosensitive and useful as low dielectric materials. These polymers are particularly useful as a passivation layer in a variety of electronic devices and displays, including liquid crystal displays (LCD), light emitting diode (LED) displays and organic electroluminescent displays (OELD) and for semiconductors.
• LCD liquid crystal displays
• LED light emitting diode
• OELD organic electroluminescent displays
• the manufacture of semiconductors, as in LCD technology, is generally a photolithographic process in which a solution of a resist material is applied as a thin coating over the substrate, heated to remove the solvent, and then subsequently exposed to electromagnetic radiation in an image-wise fashion, typically through a mask. Exposed areas of the photoresist are transformed chemically and/or physically to pattern a latent image that can then be developed by standard methods into a three- dimensional image.
• the resist film that remains after development serves as a protective mask, allowing the resist image to be transferred onto the substrate by etching or similar processes. Typically, the remaining resist film is stripped after the etching step, leaving an image of the desired circuit in the substrate.
• the process, together with other deposition ' processes, may be repeated many times to fabricate three-dimensional semiconductor devices.
• a passivation layer is often applied to protect the circuitry of the semiconductor devices from moisture and contamination.
• passivation layers may also be useful in applications such as organic electroluminescent displays (OELDs).
• OELD organic electroluminescent displays
• a conductive transparent anode layer, a hole injection layer, a hole transport layer, an organic electroluminescent layer, an electron transport layer and a cathode layer are stacked successively on a transparent substrate, such as glass, quartz or the like. Because the organic material is sensitive to oxidation, moisture and contamination, the OELD also needs a passivation layer. See U.S. 2003/0003225, incorporated herein by reference.
• LEDs Light emitting diodes
• LEDs are p-n junction devices, in which the electrons cross a forward-biased junction from the n- to the p-type material.
• the electron-hole recombination process produces some photons in the visible via electroluminescence, by which an exposed semiconductor surface can then emit light.
• a passivation layer is also used in LEDs. See U.S. 2004/021415, and Kho, S et al (2002) JAP J APPL PHYS, PART 2: LETTERS 41 :1336-1338, both of which are incorporated herein by reference.
• a passivation layer based on silicon dioxide or silicon nitride also called a hard coat, may be deposited to cover and insulate the surface. See Hong, WS, et al. (2003) MAT. RES. SOC. SYMP. PROC. 762: 265-270; U.S. 2003/143319.
• the passivation layer may be variously termed a "gate insulating film” when covering the gate electrodes, or a "channel protection film” when covering the silicon layers.
• the passivation layer protects the gates and channels from moisture, contamination and/or mechanical damage.
• hard coats are difficult and expensive to apply, typically requiring high-vacuum equipment and vapor deposition methods.
• a photoresist composition may comprise a film-forming polymer, which may be photoactive, and a photosensitive composition, such as a photoacid generator, that includes one or more photoactive components.
• the photoactive components of the copolymer can change various electromagnetic, physical or chemical characteristics of the photoresist composition, which include the rheological state, solubility, surface characteristics, refractive index and color, etc., as described in Thompson et al. (supra).
• electromagnetic radiation e.g., visible (VIS) and ultraviolet (UV) light
• the photoactive components of the copolymer can change various electromagnetic, physical or chemical characteristics of the photoresist composition, which include the rheological state, solubility, surface characteristics, refractive index and color, etc., as described in Thompson et al. (supra).
• electromagnetic radiation e.g., visible (VIS) and ultraviolet (UV) light
• UV light ultraviolet
• Some photoresist compositions suitable for imaging at 193 nm are known, such as materials based on aliphatic polymers and dissolution inhibitors. See, e.g., Meagley, RP et al., CHEM. COMM. 1587 (1999); Houlihan, FM et al. (1997) MACROMOLECUL.ES 30: 6517-6534; Wallow, T et al. (1997) SPIE 2724: 355-364; and Houlihan, FM et al.
• passivation layers become a permanent part of the semiconductor or display device. For this reason, materials used in the passivation layer must be mechanically robust and have good electrical insulating properties.
• the passivation resist composition should be photoimageable, thermosettable and have a low dielectric constant that assures insulation. Photoimageability gives the resist patternability; thermosettability provides robustness and allows the resist to function as a retained dielectric layer between conducting layers.
• a first aspect of the present invention provides a polymer composition comprising: a. a repeat unit derived from a fluoro-olefin selected from a group consisting of tetrafluoroethylene, hexafluoropropylene, chlorotrifluoroethylene, vinylidene fluoride, perfluoro-(2,2-dimethyl- 1 ,3-dioxole), perfluoro-(2-methylene-4-methyl-1 ,3-dioxolane), and
• the cross-linkable functional group is desirably capable of being cross-linked by acid-catalyzed ring-opening polymerization.
• thermosettable composition comprising a polymer composition of this invention and an acid catalyst or a photoacid generator.
• a further aspect provides films and articles comprising a polymer composition or thermosettable composition of this invention.
• thermoset process comprising heating a thermosettable composition of this invention, or exposing the thermosettable composition to light to generate an acid photochemically. Also provided are films or articles made by the thermoset process. DETAILED DESCRIPTION QF THE PREFERRED EMBODIMENTS
• acid-catalyzed refers to chemical reactions that form the basis for essentially all chemically amplified resist systems for microlithography applications. These reactions are generally classified as either cross-linking (photopolymerization) or deprotection reactions.
• derived from refers to the preparation of one organic substance from another, e.g., an organic compound containing a structural radical similar to that compound which it was prepared.
• protected acid functional group refers to a functional group that protects a fluorinated alcohol group and/or other acid group (i.e., the protected group) from exhibiting its acidity while in this protected form.
• the tertiary-butyl group is the protecting group in a tertiary-butyl ester and this protecting group protects the free acid. In undergoing deprotection (conversion of protected acid to free acid), the ester is converted to the corresponding acid.
• photoimageable refers to a composition that changes the solubility of the polymer by radiation.
• a photoimageable refers to a composition that changes the solubility of the polymer by radiation.
• photoacid generator refers to a compound especially added to a formulation to convert absorbed light energy, UV or visible light, into chemical energy in the form of a proton.
• photoactive refers to a component of the resist material that reacts in response to the actinic radiation. Another term for this component is sensitizer, it is the sensitizer that gives the resist its developer resistance and radiation absorption properties.
• sensitizer it is the sensitizer that gives the resist its developer resistance and radiation absorption properties.
• polymer includes the term “co-polymer” and these two terms may be used herein interchangeably when the context dictates.
• the present invention provides a fluorinated polymer, that is, the polymer comprises at least one repeat unit derived from a fluoro-olefin; at least one functional unit capable of crosslinking via acid-catalyzed ring- opening polymerization; and at least one repeat unit having at least one protected acid functional group.
• Preferred functional groups capable of crosslinking via acid-catalyzed ring-opening polymerization include those that contain a glycidyl group.
• the polymer can contain repeat units derived from glycidyl acrylate.
• the present polymer may comprise a repeat unit derived from a compound containing functional group, R, wherein R has the following structure.
• Ri is H or C 1 -C 3 alkyl, preferably H.
• This functional group also contains fluoroalkyl groups, designated Rf and Rf', which can be partially or fully fluorinated alkyl groups.
• Rf and Rf 1 are independently the same or different fluoroalkyl groups of from 1 to 10 carbon atoms. Alternatively, they may be taken together and are (CF2)n wherein n is 2 to 10.
• the terms "taken together" indicate that Rf and Rf' are not separate, discrete fluorinated alkyl groups, but that together they form a ring structure such as is illustrated below in case of a 5-membered ring:
• Rf and Rf' are independently perfluoroalkyl groups of 1 to
• One or more repeat units of the present polymer may be cyclic or polycyclic.
• Suitable polycyclic repeat units include those derived from:
• m and r are 0, 1 , or 2; and R 4 to R 9 are independently H; Ci - do alkyl or alkoxy, optionally substituted by halogen or ether oxygens, and R is as defined above.
• CH 2 CHOCH 2 CH 2 OCH 2 C(CF 3 )2 ⁇ H
• CH 2 CHO(CH 2 ) 4 OCH 2 C(CF3) 2 OH
• Suitable R 3 groups include substituted and unsubstituted tertiary and cyclic alkyl groups.
• Suitable CO 2 R 3 ester groups include, but are not limited to: A) esters capable of forming, or rearranging to, a tertiary cation; B) esters of lactones; C) acetal esters; D) D-cyclic ketone esters; E) D-cyclic ether esters; and F) esters which are easily hydrolyzable because of anchimeric assistance, such as MEEMA (methoxy ethoxy ethyl methacrylate).
• Some specific examples in category A) are t-butyl ester, 2-methyl-2-adamantyl ester, and isobomyl ester.
• Preferred polymers for use in this invention have a molecular weight above that of chain entitlement, e.g., of about 10,000 and greater.
• the polymer composition can also comprise a repeat unit derived from a fluoroolefin of 2 to 20 carbon atoms.
• a preferred fluoroolefin is tetrafluoroethylene.
• the present invention also provides a photoimageable composition comprising the present polymer and at least one photoactive component (PAC), described below.
• PAC photoactive component
• the preferred process for producing the present polymers is radical addition polymerization.
• Bulk polymerization or solution polymerization may be employed. Any suitable polymerization initiator, such as di-(4-tert- butylcyclohexyl)peroxy-dicarbonate, may be used under appropriate conditions.
• the polymerization pressure may range from about 50 to about 10,000 psig, preferably from about 200 to about 1 ,000 psig.
• the polymerization temperature may range from about 30 °C to about 120 °C, preferably from about 40 °C to about 80 °C.
• Suitable solvents include 1 ,1 ,2-trichIorofluoroethane and non-chlorofluorocarbon solvents, such as 1 ,1 ,1 ,3,3-pentafluorobutane.
• the polymerization process may be further enhanced by a semi- batch synthesis.
• a part of the monomer mixture is placed in the reaction vessel and then, portionwise or continuously, the remaining monomers and initiator are added to the vessel throughout the polymerization process.
• the presnence of fluorine-containing repeat units in the polymer compositions disclosed herein can provide polymers with high transmittance of light in the visible and UV-A region.
• the presence of fluorine in the polymer tends to lower the dielectric constant of the polymer, which is a desirable characteristic for some applications, especially to foster the use of a photoimageable polymer in silicon wafer circuitry as a dielectric material between conducting layers.
• Photoactive Component (PAC) Photoactive Component
• the polymers can be made photoimageable by combining the copolymers with at least one photoactive component (PAC), a compound that yields either acid or base upon exposure to actinic radiation. If an acid is produced upon exposure to actinic radiation, the PAC is termed a photoacid generator (PAG). If a base is produced upon exposure to actinic radiation, the PAC is termed a photobase generator (PBG).
• PAC photoactive component
• PAG photoacid generator
• PBG photobase generator
• dissolution inhibitors can be added to photoimageable compositions derived from the copolymers disclosed herein. Ideally, the mix of dissolution inhibitors and additives should be designed/chosen to impart not only dissolution inhibition to the resultant composition but also plasma etch resistance, and the desired adhesion behavior. Some dissolution inhibiting compounds also serve as plasticizers in resist compositions. Several suitable dissolution inhibitors are disclosed in U.S. 6,653,419, which is incorporated herein by reference. Positive-Working and Negative-Working Photoresists
• Photoimageable compositions derived from the polymers disclosed herein can either be positive- or negative-working, depending upon choice of components in the fluoropolymer, the presence or absence of optional dissolution inhibitor and crosslinking agents, and the choice of solvent used in development. The choice of all of these components is well within the skill of an ordinary artisan in this field.
• Other Components are well within the skill of an ordinary artisan in this field.
• the polymer compositions can contain additional optional components.
• optional components include, but are not limited to, resolution enhancers, adhesion promoters, residue reducers, coating aids, plasticizers, and Tg (glass transition temperature) modifiers.
• thermosettable polymer is accomplished via an acid- catalyzed reaction, the fundamental reaction underlying chemically amplified resist systems for microlithography applications. These reactions are generally classified as either cross-linking (photopolymerization) or deprotection. Deprotection reactions are used to unmask acidic functionality such as phenolic or pendent carboxylic acid groups, and thus lend themselves to positive-working resist applications. On the other hand, acid-catalyzed polymer cross-linking and photopolymerization reactions are used in negative-working resist systems.
• thermosettable polymer can be cured by crosslinking of the pendant cross-linkable group through acid-catalyzed ring-opening polymerization, in which the necessary acid is either added to the present polymer composition, or preferably generated photolytically or thermally by means of a photoacid generator.
• the relative amount of pendant cross- linkable group and the acid labile ester is important during the curing step.
• "flood" irradiation that is, exposure to radiation without the use of a mask, generates a strong non- nucleophilic acid.
• the ester group cleaved and becomes a free carboxylic acid.
• a strong non-nucleophilic acid can be generated by heating above the thermal decomposition of a PAG, typically above 180 0 C. Then the strong non-nucleophilic acid will start to catalyze ring-opening polymerization of the epoxide. During the ring opening polymerization, there will be a number of competing reactions with the polymerization. An important competing reaction is esterification of the free carboxylic acid with the epoxide. It is believed that reduction of the free carboxylic acid levels by esterification with epoxides will lead to materials with lower dielectric constants and increased hydrophobicity. In this way, the degree of esterification will affect the dielectric property as well as the hydrophobicity of the cured polymer.
• Electroluminescent display Organic light
• LED Light Emitting Diode (Organic LED) NB-F-OH
• NB-F-O-GIv Polymer of TFE, NB-F-OH.
• NB-F-O-GIv Polymer of TFE, NB-F-OH.
• NB-F-O-GIv Polymer of TFE, NB-F-OH.
• t-BuAc The monomer NB-F-O-GIy is prepared by reaction of NB-F-OH with epichlorohydrin (Sigma-Aldrich Chemical Company) in the presence of base according to the procedure described by Maruno, Nakamura and Murata (Macromolecules, volume 29, pages 2006 to 2010 (1996)).
• a metal pressure vessel of approximate 270 mL capacity is charged with 56.55 g NB-F-OH, 17.3 g NB-F-O-GIy, 0.64 g tert-butyi acrylate, and 25 mL Solkane® 365.
• the vessel is closed, cooled to about -15 0 C and pressured to 400 psi with nitrogen and vented several times.
• the reactor contents are heated to 50 0 C.
• TFE is added to a pressure of 340 psi and a pressure regulator is set to maintain the pressure at 340 psi throughout the polymerization by adding TFE as required.
• a solution of 66.46 g of NB-F- OH, 19.22 g of NB-F-O-GIy and 7.68 g of tert-butyl acrylate diluted to 100 mL with Solkane® 365mfc is pumped into the reactor at a rate of 0.10 mL/min for 12 hr.
• a solution of 7.3 g Perkadox ® 16N and 60 mL methyl acetate diluted to 100 mL with Solkane® 365 mfc is pumped into the reactor at a rate of 2.0 mL/min for 6 min, and then at a rate of 0.1 mL/min for 8 hr.
• the vessel is cooled to room temperature and vented to 1 atm.
• the recovered polymer solution is added slowly to an excess of hexane while stirring.
• the precipitate is filtered, washed with hexane and air-dried.
• the resulting solid is dissolved in a mixture of THF and Solkane® 365 mfc and added slowly to excess hexane.
• the precipitate is filtered, washed with hexane and dried in a vacuum oven overnight to give a polymer comprising fluoroalcohol groups, glycidyl groups and tertiary butyl ester groups.
• a metal pressure vessel of approximate 270 ml_ capacity is charged with 70.33 g NB-F-OH, 0.64 g t-BuAc, 0.32 g GA and 25 ml_ Solkane® 365.
• the vessel is closed, cooled to about -15 0 C and pressured to 400 psi with nitrogen and vented several times.
• the reactor contents are heated to 50 0 C.
• TFE is added to a pressure of 340 psi and a pressure regulator is set to maintain the pressure at 340 psi throughout the polymerization by adding TFE as required.
• a solution of 80.56 g of NB-F- OH, 7.68 g of tert-butyl acrylate and 2.67 g GA diluted to 100 ml_ with Solkane® 365 mfc is pumped into the reactor at a rate of 0.10 mL/min for 12 hr.
• a solution of 7.3 g Perkadox ® 16N and 60 ml_ methyl acetate diluted to 100 ml_ with Solkane® 365 mfc is pumped into the reactor at a rate of 2.0 mL/min for 6 min, and then at a rate of 0.1 mL/min for 8 hr.
• the vessel is cooled to room temperature and vented to 1 atm.
• the recovered polymer solution is added slowly to an excess of hexane while stirring.
• the precipitate is filtered, washed with hexane and air-dried.
• the resulting solid is dissolved in a mixture of THF and Solkane® 365 mfc and added slowly to excess hexane.
• the precipitate is filtered, washed with hexane and dried in a vacuum oven overnight to give a polymer comprising fluoroalcohol groups, glycidyl groups and tertiary butyl ester groups.
• Epoxide Polymer prepared as in Example 1 (1.097 grams), 0.485 grams Cyracure® UVI-6976, and 0.08 grams Quanticure ITX (Sigma-Aldrich) are dissolved to a clear solution in 2.546 grams of propylene glycol 1- monomethyl ether 2-acetate.
• the solution is spin coated at 3000 rpm onto a substrate to give about 1 micron thick films.
• the film is then dried for 2 min at 90 0 C on a hot plate.
• the film is exposed with approximate 600 mJ/cm 2 broad band UV light using a 20 micron photomask, then heat treated on a hot plate at 120 0 C for 2 min.
• the imaged part is developed by dipping into AZ 300 developer.
• the remaining film is rinsed with water for 1 min, and then dried at 90 0 C for 1 min.
• This film is flood exposed with a mercury lamp UV light for 50 to 2000 mJ/cm 2 , then heat treated at 120 0 C for 2 min, followed by heating the film at 250 0 C for 100 min. The film is cured at this point.

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• 2006
  • 2006-03-11 KR KR1020077023155A patent/KR20070119671A/ko not_active Ceased
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