WO2006079741A3 - Dispositif microelectronique emetteur d'electrons a plusieurs faisceaux - Google Patents

Dispositif microelectronique emetteur d'electrons a plusieurs faisceaux Download PDF

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Publication number
WO2006079741A3
WO2006079741A3 PCT/FR2006/050047 FR2006050047W WO2006079741A3 WO 2006079741 A3 WO2006079741 A3 WO 2006079741A3 FR 2006050047 W FR2006050047 W FR 2006050047W WO 2006079741 A3 WO2006079741 A3 WO 2006079741A3
Authority
WO
WIPO (PCT)
Prior art keywords
electron beam
beam emitting
emitting device
microelectronic
multiple electron
Prior art date
Application number
PCT/FR2006/050047
Other languages
English (en)
Other versions
WO2006079741A2 (fr
Inventor
Pierre Nicolas
Yohan Desieres
Original Assignee
Commissariat Energie Atomique
Pierre Nicolas
Yohan Desieres
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat Energie Atomique, Pierre Nicolas, Yohan Desieres filed Critical Commissariat Energie Atomique
Priority to AT06709431T priority Critical patent/ATE520142T1/de
Priority to JP2007552690A priority patent/JP4773460B2/ja
Priority to EP06709431A priority patent/EP1842220B1/fr
Priority to US11/814,228 priority patent/US7800085B2/en
Publication of WO2006079741A2 publication Critical patent/WO2006079741A2/fr
Publication of WO2006079741A3 publication Critical patent/WO2006079741A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H01J1/3044—Point emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/304—Field emission cathodes
    • H01J2201/30446—Field emission cathodes characterised by the emitter material
    • H01J2201/30453—Carbon types
    • H01J2201/30469—Carbon nanotubes (CNTs)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

Abstract

L'invention concerne un dispositif d'émission électronique à plusieurs faisceaux d'électrons comprenant une première structure (115) comportant une pluralité de micro-sources d'émission de faisceau d'électrons, une deuxième structure (140) en regard de la première structure comportant des moyens pour collecter des électrons émis par la première structure et pour réaliser une émission secondaire suite à cette collection. L'invention s'applique notamment au domaine de la lithographie par écriture directe.
PCT/FR2006/050047 2005-01-27 2006-01-24 Dispositif microelectronique emetteur d'electrons a plusieurs faisceaux WO2006079741A2 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AT06709431T ATE520142T1 (de) 2005-01-27 2006-01-24 Mikroelektronische vorrichtung mit mehrfacher elektronenstrahlenemission
JP2007552690A JP4773460B2 (ja) 2005-01-27 2006-01-24 マルチビームマイクロ電子工学的電子放出デバイス
EP06709431A EP1842220B1 (fr) 2005-01-27 2006-01-24 Dispositif microelectronique emetteur d'electrons a plusieurs faisceaux
US11/814,228 US7800085B2 (en) 2005-01-27 2006-01-24 Microelectronic multiple electron beam emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0550235A FR2881270B1 (fr) 2005-01-27 2005-01-27 Dispositif microelectronique emetteur d'electrons a plusieurs faisceaux
FR0550235 2005-01-27

Publications (2)

Publication Number Publication Date
WO2006079741A2 WO2006079741A2 (fr) 2006-08-03
WO2006079741A3 true WO2006079741A3 (fr) 2007-03-29

Family

ID=35044594

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2006/050047 WO2006079741A2 (fr) 2005-01-27 2006-01-24 Dispositif microelectronique emetteur d'electrons a plusieurs faisceaux

Country Status (6)

Country Link
US (1) US7800085B2 (fr)
EP (1) EP1842220B1 (fr)
JP (1) JP4773460B2 (fr)
AT (1) ATE520142T1 (fr)
FR (1) FR2881270B1 (fr)
WO (1) WO2006079741A2 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009140441A2 (fr) * 2008-05-13 2009-11-19 Nanoink, Inc. Cantilever de détection de hauteur
WO2015042022A1 (fr) * 2013-09-20 2015-03-26 Applied Materials, Inc. Procédé et appareil pour la formation directe de caractéristiques à l'échelle nanométrique

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040084637A1 (en) * 2002-10-22 2004-05-06 Yoo In-Kyeong Electron projection lithography apparatus using secondary electrons
US20040256976A1 (en) * 2001-11-09 2004-12-23 Van Der Vaart Nijs Cornelis Vacuum display device

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
FR2646558B1 (fr) 1989-04-26 1994-04-01 Commissariat A Energie Atomique Procede et machine d'interconnexion de composants electriques par elements de soudure
US5270611A (en) 1989-06-01 1993-12-14 U.S. Philips Corporation Electric discharge element
US5412285A (en) * 1990-12-06 1995-05-02 Seiko Epson Corporation Linear amplifier incorporating a field emission device having specific gap distances between gate and cathode
JP2806281B2 (ja) * 1994-12-19 1998-09-30 日本電気株式会社 可変多角形断面の電子線形成装置およびこれを用いた電子線描画装置
FR2748347B1 (fr) * 1996-05-06 1998-07-24 Pixtech Sa Anode d'ecran plat de visualisation a anneau de protection
JPH10125215A (ja) * 1996-10-18 1998-05-15 Nec Corp 電界放射薄膜冷陰極及びこれを用いた表示装置
US5892231A (en) * 1997-02-05 1999-04-06 Lockheed Martin Energy Research Corporation Virtual mask digital electron beam lithography
US6242304B1 (en) * 1998-05-29 2001-06-05 Micron Technology, Inc. Method and structure for textured surfaces in floating gate tunneling oxide devices
US6031657A (en) * 1998-10-15 2000-02-29 Memsolutions, Inc. Membrane-actuated charge controlled mirror (CCM) projection display
FR2809862B1 (fr) * 2000-05-30 2003-10-17 Pixtech Sa Ecran plat de visualisation a memoire d'adressage
FR2811799B1 (fr) * 2000-07-13 2003-06-13 Commissariat Energie Atomique Procede et dispositif de commande d'une source d'electrons a structure matricielle, avec regulation par la charge emise
CN1397085A (zh) 2000-09-27 2003-02-12 皇家菲利浦电子有限公司 阴极射线管
US6750461B2 (en) * 2001-10-03 2004-06-15 Si Diamond Technology, Inc. Large area electron source
AU2002366912A1 (en) * 2001-12-21 2003-07-09 Koninklijke Philips Electronics N.V. Vacuum electronic device
US6864162B2 (en) * 2002-08-23 2005-03-08 Samsung Electronics Co., Ltd. Article comprising gated field emission structures with centralized nanowires and method for making the same
US6858521B2 (en) * 2002-12-31 2005-02-22 Samsung Electronics Co., Ltd. Method for fabricating spaced-apart nanostructures
US20040245224A1 (en) * 2003-05-09 2004-12-09 Nano-Proprietary, Inc. Nanospot welder and method
KR100523840B1 (ko) * 2003-08-27 2005-10-27 한국전자통신연구원 전계 방출 소자

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040256976A1 (en) * 2001-11-09 2004-12-23 Van Der Vaart Nijs Cornelis Vacuum display device
US20040084637A1 (en) * 2002-10-22 2004-05-06 Yoo In-Kyeong Electron projection lithography apparatus using secondary electrons

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
BAYLOR L.R. ET AL: "Initial lithography results from the digital electrostatic e-beam array lithography concept", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B, vol. 22, no. 6, November 2004 (2004-11-01) - December 2004 (2004-12-01), pages 3021 - 3024, XP002348948 *

Also Published As

Publication number Publication date
JP4773460B2 (ja) 2011-09-14
FR2881270B1 (fr) 2007-04-20
EP1842220B1 (fr) 2011-08-10
ATE520142T1 (de) 2011-08-15
FR2881270A1 (fr) 2006-07-28
WO2006079741A2 (fr) 2006-08-03
US20080169429A1 (en) 2008-07-17
JP2008529293A (ja) 2008-07-31
EP1842220A2 (fr) 2007-10-10
US7800085B2 (en) 2010-09-21

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