WO2006073236A1 - Apparatus and method for forming thin metal layer on three-dimensional polymeric article using ecr-cvd and electron beam - Google Patents
Apparatus and method for forming thin metal layer on three-dimensional polymeric article using ecr-cvd and electron beam Download PDFInfo
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- WO2006073236A1 WO2006073236A1 PCT/KR2005/004293 KR2005004293W WO2006073236A1 WO 2006073236 A1 WO2006073236 A1 WO 2006073236A1 KR 2005004293 W KR2005004293 W KR 2005004293W WO 2006073236 A1 WO2006073236 A1 WO 2006073236A1
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- Prior art keywords
- processing chamber
- polymeric article
- dimensional polymeric
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- ecr
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 46
- 239000002184 metal Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 28
- 238000012545 processing Methods 0.000 claims abstract description 67
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 24
- 238000005086 pumping Methods 0.000 claims abstract description 11
- 238000007781 pre-processing Methods 0.000 claims description 51
- 229910021645 metal ion Inorganic materials 0.000 claims description 39
- 239000007789 gas Substances 0.000 claims description 15
- 150000002500 ions Chemical class 0.000 claims description 14
- 238000006467 substitution reaction Methods 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 11
- 238000002203 pretreatment Methods 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 235000021109 kimchi Nutrition 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- HGSWUDXNSZKUBT-UHFFFAOYSA-N C(C)[Ti]NC Chemical compound C(C)[Ti]NC HGSWUDXNSZKUBT-UHFFFAOYSA-N 0.000 claims description 2
- ZLOKVAIRQVQRGC-UHFFFAOYSA-N CN(C)[Ti] Chemical compound CN(C)[Ti] ZLOKVAIRQVQRGC-UHFFFAOYSA-N 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- 230000001413 cellular effect Effects 0.000 claims description 2
- JBAKCAZIROEXGK-LNKPDPKZSA-N copper;(z)-4-hydroxypent-3-en-2-one Chemical compound [Cu].C\C(O)=C\C(C)=O JBAKCAZIROEXGK-LNKPDPKZSA-N 0.000 claims description 2
- 235000013305 food Nutrition 0.000 claims description 2
- 239000000446 fuel Substances 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 239000008267 milk Substances 0.000 claims description 2
- 210000004080 milk Anatomy 0.000 claims description 2
- 235000013336 milk Nutrition 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 230000000474 nursing effect Effects 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- XSNQEMWVLMRPFR-UHFFFAOYSA-N silver nitride Chemical compound [N-3].[Ag+].[Ag+].[Ag+] XSNQEMWVLMRPFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 239000010936 titanium Substances 0.000 claims description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000007943 implant Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 description 9
- 238000013022 venting Methods 0.000 description 4
- 150000001768 cations Chemical class 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 1
- -1 batteries Substances 0.000 description 1
- 230000003115 biocidal effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F35/00—Accessories for mixers; Auxiliary operations or auxiliary devices; Parts or details of general application
- B01F35/75—Discharge mechanisms
- B01F35/754—Discharge mechanisms characterised by the means for discharging the components from the mixer
- B01F35/75465—Discharge mechanisms characterised by the means for discharging the components from the mixer using suction, vacuum, e.g. with a pipette
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F1/00—Treatment of water, waste water, or sewage
- C02F1/52—Treatment of water, waste water, or sewage by flocculation or precipitation of suspended impurities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01F—MIXING, e.g. DISSOLVING, EMULSIFYING OR DISPERSING
- B01F25/00—Flow mixers; Mixers for falling materials, e.g. solid particles
- B01F2025/93—Arrangements, nature or configuration of flow guiding elements
- B01F2025/931—Flow guiding elements surrounding feed openings, e.g. jet nozzles
-
- C—CHEMISTRY; METALLURGY
- C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
- C02F2305/00—Use of specific compounds during water treatment
Abstract
The present invention relates to an apparatus and method for forming a thin metal layer on a three-dimensional polymeric article, and more particularly, to an apparatus and method for forming a thin metal layer on a three-dimensional polymeric article, wherein an organic metal compound is ionized and an ion motion distance thereof is controlled to form a thin metal layer with superior adhesiveness and high uniformity. The present invention provides an apparatus for forming a thin metal layer on a three-dimensional polymeric article using ECR-CVD and an electron beam, comprising a processing chamber capable of defining a hermetic space therein; a radio frequency power supply unit for applying RF power to the interior of the processing chamber; an ECR (Electron Cyclotron Resonance) source supply unit for supplying an ECR source to the interior of the processing chamber; two grids provided within the processing chamber to be spaced apart by a predetermined distance from each other so that a process zone can be defined therebetween; a pulse supply unit for supplying negative voltage pulses to the grids; an introducing/delivering unit for introducing the three-dimensional polymeric article into the processing chamber and delivering it to the outside; and a pumping unit capable of establishing a vacuum state within the processing chamber.
Description
Description
APPARATUS AND METHOD FOR FORMING THIN METAL
LAYER ON THREE-DIMENSIONAL POLYMERIC ARTICLE
USING ECR-CVD AND ELECTRON BEAM
Technical Field
[1] The present invention relates to an apparatus and method for forming a thin metal layer on a three-dimensional polymeric article, and more particularly, to an apparatus and method for forming a thin metal layer on a three-dimensional polymeric article using electron cyclotron resonance-chemical vapor deposition (ECR-CVD) and an electron beam, wherein an organic metal compound is ionized and an ion motion distance thereof is controlled to form a thin metal layer with superior adhesiveness and high uniformity. Background Art
[2] Polymers are materials with a wide variety of uses due to their properties such as their light weight, moldability and processability, transparency, and electrical insulation. According to their uses, such polymers are often required to have improvement of only surface properties without changing the overall properties of the polymers. Since the hydrophilic or hydrophobic property of a surface has a great influence on wettability, printability, colorability, biocompatibility, anti-static property, adhesive property, water-proof property, damp-proof property and the like, there have been used a variety of methods for improving surface properties.
[3] Particularly, when polymers are used for electrical and electronic materials, batteries, semiconductor devices, antibiotic polymers and the like, their surfaces have thin metal layers formed thereon to improve surface properties.
[4] Conventional methods for forming thin metal layers on surfaces of three-dimensional polymeric articles include those using ECR-CVD, sputtering, plasma vapor deposition (PVD) and the like. However, since ECR-CVD and sputtering can form a thin metal layer with a thickness not greater than 2D, they have a problem in that they cannot form a thicker metal layer. On the other hand, although PVD can form a metal layer with a larger thickness not less than 5D, PVD has a problem in that processing temperature exceeds 1200°C and thus it is hardly applicable to polymers. Disclosure of Invention
Technical Problem
[5] An object of the present invention is to provide an apparatus and method for forming a thin metal layer on a three-dimensional polymeric article using ECR-CVD
and an electron beam, so that the thin metal layer can have superior adhesiveness to the three-dimensional polymeric article and improved uniformity. Technical Solution
[6] To achieve the object, the present invention provides an apparatus for forming a thin metal layer on a three-dimensional polymeric article using ECR-CVD and an electron beam, comprising a processing chamber capable of defining a hermetic space therein; a radio frequency power supply unit for applying RF power to the interior of the processing chamber; an ECR (Electron Cyclotron Resonance) source supply unit for supplying an ECR source to the interior of the processing chamber; an electron beam supply unit for supplying an electron beam to the interior of the processing chamber; two grids provided within the processing chamber to be spaced apart by a predetermined distance from each other so that a process zone can be defined therebetween; a pulse supply unit for supplying negative voltage pulses to the grids; an introducing/delivering unit for introducing the three-dimensional polymeric article into the processing chamber and delivering it to the outside; and a pumping unit capable of establishing a vacuum state within the processing chamber.
[7] In the present invention, the ECR source supply unit may comprise an ECR zone section for ionizing a material supplied from the outside; a shower head provided to be connected to a rear end of the ECR zone section so as to supply the interior of the processing chamber with ions supplied by the ECR zone section; an organic metal compound supply section for supplying vaporized organic metal compound to the ECR zone section; and a substitution gas supply section for supplying a substitution gas to the ECR zone section.
[8] Further, the present invention provides a method for forming a thin metal layer on a three-dimensional polymeric article using ECR-CVD and an electron beam, comprising the steps of:
[9] 1) introducing the three-dimensional polymeric article into a loading chamber that is under an atmospheric pressure condition;
[10] 2) reducing pressure in the loading chamber to be under a vacuum condition, and introducing the three-dimensional polymeric article into a pre-processing chamber that is always under a vacuum condition;
[11] 3) performing pre-treatment to the three-dimensional polymeric article using plasma in the pre-processing chamber;
[12] 4) introducing the three-dimensional polymeric article into a processing chamber that is always under a vacuum condition;
[13] 5) forming the thin metal layer on a surface of the three-dimensional polymeric article with ionized metal ions using plasma in the processing chamber; and
[14] 6) transferring the three-dimensional polymeric article to an unloading chamber that is under a vacuum condition, increasing pressure in the unloading chamber to an atmospheric pressure condition, and delivering the three-dimensional polymeric article to the outside.
Advantageous Effects
[15] According to the present invention, there is an advantage in that metal ions generated from ECR sources are ionized into particles of several hundred nano-meters due to proper ion motion distances, resulting in formation of a thin metal layer with superior uniformity and adhesiveness on a three-dimensional polymeric article. Brief Description of the Drawings
[16] Fig. 1 is a sectional view showing the configuration of an apparatus for forming a thin metal layer on a three-dimensional polymeric article using ECR-CVD and an electron beam according to an embodiment of the present invention.
[17] Fig. 2 is a conceptual view illustrating the configuration of an ECR source supply unit according to an embodiment of the present invention.
[18] Fig. 3 is a conceptual view illustrating arrangement of grids according to an embodiment of the present invention.
[19] Fig. 4 is a flowchart illustrating a method for forming a thin metal layer on a three- dimensional polymeric article using ECR-CVD and an electron beam according to an embodiment of the present invention.
[20] Fig. 5 is a sectional view showing the configuration of an apparatus for forming a thin metal layer on a three-dimensional polymeric article using ECR-CVD and an electron beam according to another embodiment of the present invention. Best Mode for Carrying Out the Invention
[21] Referring to Fig. 1, an apparatus 1 for forming a thin metal layer on a three- dimensional polymeric article using ECR-CVD and an electron beam according to an embodiment of the present invention comprises a loading chamber 10, a pre-processing chamber 20, a processing chamber 30 and an unloading chamber 40. At this time, the apparatus 1 may be constructed into duplex type equipment with two apparatus associated to each other as shown in Fig. 1 or into stand-alone type equipment with one independently operating apparatus. However, the construction into the duplex type equipment as shown in Fig. 1 has an advantage in that a footprint occupied by the equipment is decreased.
[22] The respective chambers are provided with pumping units 12, 22, 32 and 42 for establishing a low degree of vacuum within the chambers. In this embodiment, the pumping units comprise rotary pumps 12a, 22a, 32a and 42a, and mechanical booster pumps 12b, 22b, 32b, 42b and 52b, respectively. With the use of the rotary pumps and
mechanical booster pumps, pressure in the chambers can reach about 10 Torr. To decrease the pressure in the chambers to about 10 Torr, it is desirable to further provide a turbo pump 22c and a cryo pump 22d. Such turbo and cryo pumps may not be provided at the loading chamber 10 and the unloading chamber 40, and are preferably provided at the pre-processing chamber 20 and the processing chamber 30 since these chambers require a high degree of vacuum, as shown in Fig. 1.
[23] Moreover, the respective chambers are further provided with venting valves 14, 24,
34 and 44 for changing a vacuum condition therein to an atmospheric pressure condition. The venting valves 14, 24, 34 and 44 enables supply of an inert gas into the respective chambers so that the pressure in the chambers can be identical with the atmospheric pressure.
[24] Passages through which a three-dimensional polymeric article M can pass are formed in partitions formed between the respective chambers, and a gate valve 50 is formed in each of the passages. The gate valve 50 is closed or opened by a pneumatic or hydraulic cylinder to isolate the adjacent chambers from each other or to allow them to communicate with each other so that the three-dimensional polymeric article M can pass therethrough.
[25] Further, each of the chambers is provided with an introducing/delivering unit (not shown in the figure) for receiving a three-dimensional polymeric article from the outside and delivering the article to the next chamber. In this embodiment, the introducing/delivering unit is provided with a slide bearing constructed of a carbon bearing. Therefore, the introducing/delivering unit comprises a conveyor motor composed of such a slide bearing. When a conveyor is formed of a carbon bearing in this manner, there are advantages in that plasma treatment is not affected under a vacuum condition and particles are not produced during a process.
[26] In this embodiment, the loading chamber 10 is an element for first introducing the three-dimensional polymeric article M, which is an object to be treated, into the apparatus 1 of this embodiment. The loading chamber 10 continuously receives three- dimensional polymeric articles from the outside while changing the interior thereof to an atmospheric pressure condition or a vacuum condition. That is, the loading chamber receives a three-dimensional polymeric article from the outside while maintaining the interior thereof under an atmospheric pressure condition, and is isolated by a loading chamber door 60 from the outside after the three-dimensional polymeric article has been received therein. Then, the pumping unit 12 is operated to establish a vacuum condition in the loading chamber. The reason why a vacuum condition is established is that it is advantageous to cause pressure in the loading chamber 10 to be identical with pressure in the pre-processing chamber 20, which is adjacent to the loading chamber and always maintained under a vacuum condition, in order to transfer the three-
dimensional polymeric article from the loading chamber to the pre-processing chamber. Since the loading chamber 10 is additionally provided in this embodiment, a three-dimensional polymeric article to be subsequently treated is introduced into the apparatus while the previously introduced three-dimensional polymeric article is being treated in the pre-processing chamber 20 or processing chamber 30. Thus, there is an advantage in that overall processing time can be shortened. That is, since the pumping and venting operations for the loading chamber 10 which it takes a great deal of time to perform are carried out during the treatment of the three-dimensional polymeric article in the pre-processing chamber 20 and the processing chamber 30, the processing time can be shortened.
[27] Next, the pre-processing chamber 20 is provided in the vicinity of the loading chamber 10 and receives the three-dimensional polymeric article M from the loading chamber 10. The pre-processing chamber is an element for pre-processing the three- dimensional polymeric article M by using plasma. Plasma is applied to the three- dimensional polymeric article M in the pre-processing chamber 20, so that adhesiveness and smoothness of the surface of the three-dimensional polymeric article can be improved. Therefore, the pre-processing chamber is formed with equipment for generating plasma therein. That is, the pre-processing chamber is provided with grids 23, a radio frequency power supply unit 25, an inert gas supply unit 26, and the pumping unit 22. Here, the radio frequency power supply unit 25 functions to apply RF power to the interior of the pre-processing chamber 20, and comprises a radio frequency power supply 25a, a matching box 25b and an antenna 25c. The inert gas supply unit 26 functions to supply argon (Ar), which is an inert gas, to the interior of the pre-processing chamber 20. Therefore, the inert gas supplied by the inert gas supply unit 26 becomes plasma state by means of the RF power applied by the radio frequency power supply unit 25. The grids 23 are provided in the pre-processing chamber 20 such that two grids are spaced apart by a predetermined distance from each other to define a pre treating zone 80 therebetween. Thus, the three-dimensional polymeric article introduced into the pre-processing chamber 20 is subjected to pre- treatment while passing through the pretreating zone 80. Negative voltage pulses are applied to the grids 23 by a pulse supply unit 27 so that only cations of the plasma generated in the pre-processing chamber 20 can be injected into the three-dimensional polymeric article.
[28] Next, the processing chamber 30 is an element for forming a thin metal layer on the surface of the three-dimensional polymeric article. That is, in the processing chamber 30, an organic metal compound supplied from the outside is ionized to produce metal ions, and the metal ions are implanted into the surface of the three-dimensional polymeric article introduced into the processing chamber 30, thereby forming a thin
metal layer. Therefore, the processing chamber 30 is provided to define a hermetic space therein, and have a radio frequency power supply unit 33, ECR source supply units 35, grids 36, and a pulse supply unit 37 therein.
[29] First, the radio frequency power supply unit 33 functions to apply RF power to the interior of the processing chamber 30, and further has an electron beam source connected thereto for supplying an electron beam to the radio frequency supply unit 33 in this embodiment. In this embodiment, a linear electron beam source for low temperature is provided as the electron beam source to supply an electron beam to the interior of the processing chamber 30. With this electron beam, the organic metal ions supplied from the ECR source supply units 35 are formed into a nano size of 10 to 20nm.
[30] Next, the ECR source supply units 35 serve to supply ECR sources within the processing chamber 30. As shown in Fig. 1, one processing chamber is provided with two ECR source supply units. At this time, the two ECR source supply units are placed in front of and at the rear of the electron beam source placed at the center, respectively. Thus, as the three-dimensional polymeric article is moved within a process zone 90, a seed layer is first formed on the surface of the three-dimensional polymeric article by the front ECR source supply unit. That is, metal ions supplied by the ECR source supply unit form a stable carbon polymer that in turn is deposited on the surface of the three-dimensional polymeric article. When the seed layer has been first formed in such a manner, there is an advantage in that the adhesiveness of a thin layer is increased. Then, an electron beam supplied by the electron beam source forms a thin layer with a desired thickness. Thereafter, metal ions supplied by the rear ECR source supply unit form a stable carbon polymer to form a cover layer on the thin layer.
[31] In this embodiment, as shown in Fig. 2, the ECR source supply unit comprises an
ECR zone section 35a, a shower head 35b, an organic metal compound supply section 35c, and a substitution gas supply section 35d. Here, an ECR source generator 35e is connected to the ECR zone section 35 a, and microwaves are operated by means of the ECR source generator 35e. In this embodiment, the ECR zone section 35a is formed into a linear type with a rectangular cross section.
[32] Next, the shower head 35b serves to spray an ECR source supplied from the ECR zone section 35a into the processing chamber 30. In this embodiment, the shower head 35a is provided to be in contact with the ECR zone section 35a and is specially manufactured and used.
[33] The organic metal compound supply section 35c is connected to the ECR zone section 35a so as to vaporize and supply an organic metal compound to the ECR zone section 35a. In this embodiment, the organic metal compound supply section 35c comprises a bubbler. In this embodiment, the organic metal compound is preferably
one selected from the group consisting of dimethylamino titanium, ethylmethylamino titanium, triethyl aluminium, triethylsilymethyl lithium, silver nitride, Cu(hfac) , Cu(acac) , Fe O , sus, Cu and Al. Preferably, the organic metal compound supply section 35c is further provided with a carrier gas supply section 35f for supplying a carrier gas that carries the vaporized organic metal compound to the ECR zone section 35a. The carrier gas supplied by the carrier gas supply section 35f serves to carry the vaporized organic metal compound to the ECR zone section 35a. In this embodiment, Ar is used as the carrier gas.
[34] Meanwhile, the substitution gas supply section 35d for supplying a substitution gas to the ECR zone section is further connected to the ECR zone section 35a. Here, the substitution gas serves to make the metal ions free by being coupled with organic materials produced while the organic metal compound is ionized. In this embodiment, H is used as the substitution gas.
[35] Next, the grids 36 are provided within the processing chamber 30. Two grids are placed in parallel to be spaced apart by a predetermined distance from each other within one processing chamber. Therefore, the process zone 90 is formed between the both grids. It is preferred that the distance between the both grids be maintained at about 70mm. Further, as shown in Fig. 3, it is preferred that the distance I between one of the grids and a sidewall of the processing chamber be about 100 to 350mm to secure a proper ion motion distance. If the proper ion motion is secured, there is an advantage in that a carbon-metal ion polymer is formed on the three-dimensional polymeric article and the ionized metal component according to increase in activity of an active species, thereby increasing the adhesiveness and uniformity of a thin layer.
[36] Moreover, the distance I between the both grids defining the process zone 90 is preferably maintained at about 50 to 150mm. If the apparatus is constructed into duplex type equipment as shown in Fig. 1, the distance I between grids provided in adjacent processing chambers is preferably maintained at 100 to 350mm. In such a state, the three-dimensional polymeric article introduced into the processing chamber 30 is formed with a thin metal layer while passing through the process zone 90.
[37] Furthermore, the pulse supply unit 37 is provided to supply negative voltage pulses to the grids 36. Therefore, the negative voltage pulses are applied to the grids 36 to selectively draw only cations (metal ions) among plasma ions, thereby forming the thin metal layer on the surface of the three-dimensional polymeric article.
[38] Next, the unloading chamber 40 is an element for receiving the three-dimensional polymeric article from the processing chamber 30 and delivering it to the outside. That is, the unloading chamber receives the three-dimensional polymeric article from the processing chamber 30 in a state where the interior of the unloading chamber is maintained under a vacuum condition. Thereafter, a stable inert gas or the like is
injected into the unloading chamber so that pressure in the unloading chamber can be increased to atmospheric pressure, and the three-dimensional polymeric article is then delivered to the outside by opening an unloading chamber door 70.
[39] Such an apparatus for forming a thin metal layer on a three-dimensional polymeric article can be applied to one selected from the group consisting of an air filter for an automobile, an air filter for an air conditioner, a filter for a water purifier, a food container, a kimchi container for a kimchi refrigerator, a nursing bottle, a paper container for milk, a fuel cell, a cellular phone case, a television back cover, a monitor back cover, an industrial monitor, an electromagnetic wave shielding material for an airplane, and an electromagnetic wave shielding material for an automobile.
[40] Hereinafter, a method for forming a thin metal layer on a three-dimensional polymeric article according to an embodiment of the present invention will be described with reference to Fig. 4.
[41] A step of introducing a three-dimensional polymeric article M into the loading chamber 10 under an atmospheric pressure condition is performed (Sl 10). This step is a starting step of the method for forming a thin metal layer on the three-dimensional polymeric article according to this embodiment, wherein the three-dimensional polymeric article M is introduced into the loading chamber 10 maintained under an atmospheric pressure condition. In this step, the three-dimensional polymeric article M is transferred to the loading chamber 10 by a means for feeding the three-dimensional polymeric article. When the three-dimensional polymeric article has been introduced into the loading chamber 10, the loading chamber door 60, which is in an opened state, is closed so that the interior of the loading chamber can be isolated from the outside.
[42] Next, a step of introducing the three-dimensional polymeric article into the preprocessing chamber 20 is performed (S 120). In this step, the three-dimensional polymeric article is to be introduced into the pre-processing chamber 20 that is always maintained under a vacuum condition. Therefore, the interior of the loading chamber 10 should be made to be under a vacuum condition. Thus, the pumping unit 12 installed at the loading chamber 10 is operated to exhaust gas present in the loading chamber 10 so that the interior of the loading chamber can be maintained under a vacuum condition. When the pressure in the loading chamber becomes identical with that in the pre-processing chamber in this manner, the gate valve 50 that isolates the loading chamber 10 and the pre-processing chamber 20 from each other is opened, and the introducing/delivering unit for the three-dimensional polymeric article is operated to introduce the three-dimensional polymeric article M into the pre-processing chamber 20.
[43] The reason why this embodiment does not employ direct introduction of the three- dimensional polymeric article M into the pre-processing chamber 20 but uses the
loading chamber 10 is as follows. In the pre-processing chamber 20, plasma is generated to perform predetermined pre-treatment for the three-dimensional polymeric article. In this regard, to generate plasma in the pre-processing chamber, the interior of the pre-processing chamber 20 should be under a vacuum condition. In order to introduce the three-dimensional polymeric article into the pre-processing chamber 20 from the outside under an atmospheric pressure condition, it is advantageous to perform the pre-treatment after the pre-processing chamber 20 is made to be under the same atmospheric pressure condition as the outside and then again placed under a vacuum condition. However, it takes a great deal of time to reciprocate between an atmospheric pressure condition and a vacuum condition. Thus, in order to shorten this process time, the pre-processing chamber 20 is caused to be always under a vacuum condition, and the loading chamber 10 is placed in the vicinity of the pre-processing chamber 20. That is, while the three-dimensional polymeric article M is subjected to the predetermined pre-treatment in the pre-processing chamber 20, the loading chamber 10 receives a new three-dimensional polymeric article from the outside and is then placed under a vacuum condition. Accordingly, a three-dimensional polymeric article can be more efficiently introduced into the pre-processing chamber 20.
[44] Next, a pre-treatment step (S 130) is performed. This step is a step of performing predetermined pre-treatment for the three-dimensional polymeric article by generating plasma. In this step, ions are implanted into the three-dimensional polymeric article to improve the adhesiveness and smoothness of the three-dimensional polymeric article. That is, Ar that is an inert gas is supplied into the pre-processing chamber 20 that is maintained under a pressure of 10 Torr, and the Ar gas is then ionized to be in a plasma state due to the RF power applied by the radio frequency power supply unit 25 while the inner pressure is maintained under a pressure of 10 Torr. The ions produced at this time are implanted into the surface of the three-dimensional polymeric article. When the pre-treatment step has been performed in such a manner, there is an advantage in that during the next process of forming a thin metal layer, a thin metal layer with high uniformity and superior adhesiveness is formed.
[45] Then, a step of introducing the three-dimensional polymeric article into the processing chamber 30 is performed (S 140). In this step, the gate valve 50 provided between the pre-processing chamber 20 and the processing chamber 30 is opened and the introducing/delivering unit of the pre-processing chamber 20 is operated to transfer the three-dimensional polymeric article to the processing chamber 30. When the transfer of the three-dimensional polymeric article is completed, the gate valve 50 is closed again to isolate the interior of the processing chamber 30.
[46] Next, a step of forming a thin metal layer on the surface of the three-dimensional polymeric article by generating metal ions within the processing chamber 30 is
performed (S 150). First, the vaporized organic metal compound is supplied into the ECR zone section 35 by the organic metal compound supply section 35c. At this time, the vaporized organic metal compound is smoothly supplied by means of the carrier gas. Further, hydrogen gas that is a substitution gas is supplied to the ECR zone section 35a by the substitution gas supply section 35d. Then, microwaves are operated in the ECR zone section 35a to ionize the supplied organic metal compound. When the organic metal compound is ionized, hydrogen gas substitutes for the metal ions to make the metal ions free. The metal ions generated in such a manner are ionized into a size of about 10 to 20nm and then sprayed into the processing chamber 30 through the shower head 35b. Further, the electron beam source supplies an electron beam into the processing chamber to make the metal ions to a nano size, thereby forming a thin layer with a desired thickness.
[47] The metal ions sprayed into the processing chamber 30 are implanted into the surface of the three-dimensional polymeric article due to the negative voltage pulses applied to the grids 36. At this time, it is important to properly secure an ion motion distance by causing the grid to be spaced apart by a distance of about 100 to 350mm from the sidewall of the processing chamber.
[48] Then, a step of delivering the three-dimensional polymeric article to the outside is performed (S 160). In this step, the gate valve 50 provided between the processing chamber 30 and the unloading chamber 40 is opened and the introducing/delivering unit of the processing chamber is operated to deliver the three-dimensional polymeric article M to the unloading chamber 40 under a vacuum condition. Subsequently, the gate valve 50 is closed and a venting process in which a specific gas is injected into the unloading chamber 40 to increase pressure is performed. When the pressure in the unloading chamber 40 is identical with the atmospheric pressure, the unloading chamber door 70 is opened and the three-dimensional polymeric article M is delivered to the outside. Accordingly, the three-dimensional polymeric article is completely treated. Mode for the Invention
[49] <Embodiment 2>
[50] An apparatus 100 for forming a thin metal layer on a three-dimensional polymeric article using ECR-CVD and an electron beam according to this embodiment comprises a loading chamber 110, a pre-processing chamber 120, a processing chamber 130, an unloading chamber 140 and a metal implanting chamber 190, as shown in Fig. 5. Since the loading chamber 110, the pre-processing chamber 120, the processing chamber 130 and the unloading chamber 140 in this embodiment have the same structures and functions as those in the first embodiment, descriptions thereof will not be made
repeatedly.
[51] The metal implanting chamber 190 in this embodiment is an element for implanting metal ions into the surface of a three-dimensional polymeric article to improve a binding force of a thin metal layer. The metal implanting chamber 190 is provided to define a hermetic space therein, and has grids 193, a pulse supply unit 195 and a metal ion generating unit 191 therein.
[52] The grids 193 are provided within the metal implanting chamber 190 such that two grids can be placed in parallel to be spaced apart by a predetermined distance from each other, as shown in Fig. 5. Therefore, a process zone is formed between the both grids. The three-dimensional polymeric article is positioned in the process zone and then subjected to an implanting process.
[53] Further, the pulse supply unit 195 for supplying negative voltage pulses to the grids
193 is provided. Thus, the negative voltage pulses are applied to the grids 193 to selectively draw cations (metal ions) among plasma ions.
[54] Next, the metal ion generating unit 191 is an element for supplying metal ions into the metal ion implanting chamber 190. Metal ions generated by the metal ion generating unit 191 collide with and are implanted into the three-dimensional polymeric article by the grids 193.
[55] In this embodiment, the metal ion generating unit may employ sputtering, PECVD,
MD or the like. Preferably, the metal ions supplied by the metal ion generating unit are Cu, Al, Ni, Ag, Ti or the like.
Industrial Applicability
[56] According to the present invention, there is an advantage in that metal ions generated from ECR sources are ionized into particles of several hundred nano-meters due to proper ion motion distances, resulting in formation of a thin metal layer with superior uniformity and adhesiveness on a three-dimensional polymeric article.
Claims
[1] An apparatus for forming a thin metal layer on a three-dimensional polymeric article using ECR-CVD and an electron beam, comprising: a processing chamber capable of defining a hermetic space therein; a radio frequency power supply unit for applying RF power to the interior of the processing chamber; an ECR (Electron Cyclotron Resonance) source supply unit for supplying an
ECR source to the interior of the processing chamber; an electron beam supply unit for supplying an electron beam to the interior of the processing chamber; two grids provided within the processing chamber to be spaced apart by a predetermined distance from each other so that a process zone can be defined therebetween; a pulse supply unit for supplying negative voltage pulses to the grids; an introducing/delivering unit for introducing the three-dimensional polymeric article into the processing chamber and delivering it to the outside; and a pumping unit capable of establishing a vacuum state within the processing chamber.
[2] The apparatus as claimed in claim 1, wherein the ECR source supply unit comprises: an ECR zone section for ionizing a material supplied from the outside; a shower head provided to be connected to a rear end of the ECR zone section so as to supply the interior of the processing chamber with ions supplied by the
ECR zone section; an organic metal compound supply section for supplying vaporized organic metal compound to the ECR zone section; and a substitution gas supply section for supplying a substitution gas to the ECR zone section.
[3] The apparatus as claimed in claim 2, wherein the ECR zone section is a linear
ECR zone section with a rectangular cross-section.
[4] The apparatus as claimed in claim 3, wherein the organic metal compound supply section is further provided with a carrier gas supply section for supplying a carrier gas that carries the vaporized organic metal compound to the ECR zone section.
[5] The apparatus as claimed in claim 4, wherein the organic metal compound is one selected from the group consisting of dimethylamino titanium, ethylmethylamino titanium, triethyl aluminium, triethylsilymethyl lithium, silver nitride, Cu(hfac) ,
Cu(acac) , Fe O , sus, Cu and Al.
[6] The apparatus as claimed in claim 5, wherein the carrier gas is argon (Ar).
[7] The apparatus as claimed in claim 6, wherein the substitution gas supply section supplies hydrogen (H ).
[8] The apparatus as claimed in claim 7, wherein the introducing/delivering unit is a conveyor motor constructed of a slide bearing.
[9] The apparatus as claimed in claim 7, wherein the sliding bearing is a carbon bearing.
[10] The apparatus as claimed in claim 9, wherein the three-dimensional polymeric article is one selected from the group consisting of an air filter for an automobile, an air filter for an air conditioner, a filter for a water purifier, a food container, a kimchi container for a kimchi refrigerator, a nursing bottle, a paper container for milk, a fuel cell, a cellular phone case, a television back cover, a monitor back cover, an industrial monitor, an electromagnetic wave shielding material for an airplane, and an electromagnetic wave shielding material for an automobile.
[11] The apparatus as claimed in claim 10, further comprising a pre-processing chamber provided to be connected to the processing chamber so as to perform pre-treatment to a surface of the three-dimensional polymeric article by generating plasma therein.
[12] The apparatus as claimed in claim 11, wherein the pre-processing chamber comprises: grids provided in the pre-processing chamber to be spaced apart by a predetermined distance from each other so as to define a pretreating zone therebetween; a radio frequency power supply unit for applying RF power to the interior of the pre-processing chamber; an inert gas supply unit for supplying an inert gas to the interior of the preprocessing chamber; and a pumping unit capable of establishing a vacuum state within the pre-processing chamber.
[13] The apparatus as claimed in claim 12, wherein the radio frequency power supply unit comprises a radio frequency power supply, a matching box, and an antenna.
[14] The apparatus as claimed in claim 13, wherein the inert gas is argon (Ar).
[15] The apparatus as claimed in claim 14, further comprising: a loading chamber provided to be connected to the pre-processing chamber so as to receive the three-dimensional polymeric article from the outside and supply it to the pre-processing chamber; and an unloading chamber provided to be connected to the processing chamber so as
to receive the three-dimensional polymeric article treated in the processing chamber and deliver it to the outside, wherein gate valves are further provided between adjacent ones of the loading chamber, the pre-processing chamber, the processing chamber and the unloading chamber, so as to open the respective chambers.
[16] The apparatus as claimed in any one of claims 11 to 15, further comprising a metal ion implanting chamber between the pre-processing chamber and the processing chamber to implant metal ions into the surface of the three-dimensional polymeric article.
[17] The apparatus as claimed in claim 16, wherein the metal ion implanting chamber comprises: a chamber capable of defining a hermetic space therein; two grids provided within the chamber to be spaced apart by a predetermined distance from each other so that a process zone can be defined therebetween; a pulse supply unit for supplying negative voltage pulses to the grids; a metal ion generating unit for generating metal ions and supplying them into the chamber; an introducing/delivering unit for introducing the three-dimensional polymeric article into the chamber and delivering it to the outside; and a pumping unit capable of establishing a vacuum state within the chamber.
[18] The apparatus as claimed in claim 17, wherein the metal ion supply unit is one selected among sputtering, PECVD and MD.
[19] The apparatus as claimed in claim 17, wherein the metal ions comprise one selected among Cu, Al, Ni, Ag and Ti.
[20] A method for forming a thin metal layer on a three-dimensional polymeric article using ECR-CVD and an electron beam, comprising the steps of:
1) introducing the three-dimensional polymeric article into a loading chamber that is under an atmospheric pressure condition;
2) reducing pressure in the loading chamber to be under a vacuum condition, and introducing the three-dimensional polymeric article into a pre-processing chamber that is always under a vacuum condition;
3) performing pre-treatment to the three-dimensional polymeric article using plasma in the pre-processing chamber;
4) introducing the three-dimensional polymeric article into a processing chamber that is always under a vacuum condition;
5) forming the thin metal layer on a surface of the three-dimensional polymeric article with ionized metal ions using plasma in the processing chamber; and
6) transferring the three-dimensional polymeric article to an unloading chamber
that is under a vacuum condition, increasing pressure in the unloading chamber to an atmospheric pressure condition, and delivering the three-dimensional polymeric article to the outside. [21] The method as claimed in claim 20, wherein the metal ions are ionized to a size of 10 to 20nm. [22] The method as claimed in claim 21, wherein step 5) comprises forming the thin metal layer after improving activity of the ions by controlling ion motion distances of the metal ions. [23] The method as claimed in claim 20, after step 3), further comprising the step of implanting metal ions into the surface of the three-dimensional polymeric article.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2005-0000178 | 2005-01-03 | ||
| KR1020050000178A KR100672248B1 (en) | 2005-01-03 | 2005-01-03 | Continuous metal thin layer depositing apparatus for three-dimensional shape of polymer and continuous metal thin layer depositing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2006073236A1 true WO2006073236A1 (en) | 2006-07-13 |
Family
ID=36647709
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/KR2005/004293 WO2006073236A1 (en) | 2005-01-03 | 2005-12-14 | Apparatus and method for forming thin metal layer on three-dimensional polymeric article using ecr-cvd and electron beam |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR100672248B1 (en) |
| TW (1) | TW200704820A (en) |
| WO (1) | WO2006073236A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02133568A (en) * | 1988-11-11 | 1990-05-22 | Shimadzu Corp | Thin film forming device |
| JPH03260073A (en) * | 1990-03-12 | 1991-11-20 | Fuji Electric Co Ltd | Formation of thin film |
| JPH042767A (en) * | 1990-04-18 | 1992-01-07 | Toyobo Co Ltd | Production of thin film |
| JPH1081971A (en) * | 1996-07-10 | 1998-03-31 | Suzuki Motor Corp | Formation of sic thin coating on high polymer substrate by plasma cvd and device therefor |
| KR20030066557A (en) * | 2003-07-22 | 2003-08-09 | 주식회사 에폰 | Continuous surface-treating apparatus for three-dimensional shape of polymer and continuous surface-treating method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100593808B1 (en) * | 2004-02-18 | 2006-06-26 | 주식회사 에폰 | Continuous surface-treating apparatus for three-dimensional shape polymer and continuous surface-treating method thereof |
-
2005
- 2005-01-03 KR KR1020050000178A patent/KR100672248B1/en not_active IP Right Cessation
- 2005-12-14 WO PCT/KR2005/004293 patent/WO2006073236A1/en active Application Filing
-
2006
- 2006-01-02 TW TW095100005A patent/TW200704820A/en unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02133568A (en) * | 1988-11-11 | 1990-05-22 | Shimadzu Corp | Thin film forming device |
| JPH03260073A (en) * | 1990-03-12 | 1991-11-20 | Fuji Electric Co Ltd | Formation of thin film |
| JPH042767A (en) * | 1990-04-18 | 1992-01-07 | Toyobo Co Ltd | Production of thin film |
| JPH1081971A (en) * | 1996-07-10 | 1998-03-31 | Suzuki Motor Corp | Formation of sic thin coating on high polymer substrate by plasma cvd and device therefor |
| KR20030066557A (en) * | 2003-07-22 | 2003-08-09 | 주식회사 에폰 | Continuous surface-treating apparatus for three-dimensional shape of polymer and continuous surface-treating method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060079716A (en) | 2006-07-06 |
| TW200704820A (en) | 2007-02-01 |
| KR100672248B1 (en) | 2007-01-22 |
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