WO2006071816A2 - Protecteur de fenetre pour gravure par pulverisation de couches metalliques - Google Patents

Protecteur de fenetre pour gravure par pulverisation de couches metalliques Download PDF

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Publication number
WO2006071816A2
WO2006071816A2 PCT/US2005/046930 US2005046930W WO2006071816A2 WO 2006071816 A2 WO2006071816 A2 WO 2006071816A2 US 2005046930 W US2005046930 W US 2005046930W WO 2006071816 A2 WO2006071816 A2 WO 2006071816A2
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WO
WIPO (PCT)
Prior art keywords
window
protector
chamber
processing apparatus
plasma processing
Prior art date
Application number
PCT/US2005/046930
Other languages
English (en)
Other versions
WO2006071816A3 (fr
Inventor
Arthur M. Howald
Tuqiang Ni
Original Assignee
Lam Research Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corporation filed Critical Lam Research Corporation
Priority to JP2007549527A priority Critical patent/JP2008526047A/ja
Publication of WO2006071816A2 publication Critical patent/WO2006071816A2/fr
Publication of WO2006071816A3 publication Critical patent/WO2006071816A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings

Definitions

  • the present invention relates generally to semiconductor fabrication and, more particularly, to a window protector for sputter etching of metal layers.
  • inductively coupled plasma etching tools e.g., the 2300 Versys® etch system commercially available from Lam Research Corporation of Fremont, California
  • electrically conducting films are deposited on the dielectric window during some etch processes.
  • An example of such an etch process is the sputter etching of platinum electrodes in a magnetoresistive random access memory (MRAM) stack.
  • MRAM magnetoresistive random access memory
  • the dielectric window is typically made of an insulating dielectric material such as fused silica or alumina.
  • the deposition of an electrically conducting film on the dielectric window reduces the inductive coupling between the RF coil and the plasma, causing a reduction in the plasma density and eventually making it impossible to sustain the plasma.
  • the conducting film begins to interfere with the etch process, the etch chamber must be opened and the dielectric window must be cleaned.
  • U.S. Patent No. US 6,280,563 Bl to Baldwin, Jr. et al. discloses a plasma device in which a non-magnetic metal plate is formed on the lower surface of the dielectric window, i.e., the surface of the dielectric window disposed inside the chamber (see, e.g., reference numeral 56 in Figure 1).
  • the non-magnetic metal plate has a configuration that includes a plurality of radially extending slots. These slots disrupt eddy currents that would otherwise flow in the metal plate.
  • the metal plate would block the deposition of a conducting film on the portion of the dielectric window covered by the metal plate, but this may not prevent inductive coupling between the RF coil and the plasma from being blocked during an etch process.
  • the deposited conducting film conformally coats the surface of the metal plate and the surface of the dielectric window that is exposed by the radial slots in the metal plate, then a continuous loop of conducting film would be formed and this continuous loop of conducting film may be sufficient to block the inductive coupling between the RF coil and the plasma.
  • a continuous conducting structure including the metal plate and the deposited conductive film would be formed and this continuous conducting structure may be sufficient to block the inductive coupling between the RF coil and the plasma.
  • the present invention fills this need by providing an inductively coupled plasma processing apparatus that is configured to prevent conductive etch byproducts from being deposited on the inner surface of the window in the form of a continuous loop.
  • the plasma processing apparatus may include a window protector disposed within the chamber or a plurality of window protectors disposed within the chamber.
  • the window may have a plurality of T-shaped or dovetail slots formed therein.
  • the window also may have a plurality of rectangular slots formed therein, with a window protector having corresponding slots being mounted against the inner surface of the window.
  • a first inductively coupled plasma processing apparatus includes a chamber having a top opening.
  • a window seals the top opening of the chamber, and the window has an inner surface that is exposed to an internal region of the chamber.
  • a window protector for protecting the inner surface of the window is disposed within the chamber. The window protector is configured to prevent conductive etch byproducts from being deposited on the inner surface of the window in the form of a continuous loop.
  • the window protector is disposed within the chamber such that the window protector is separated from the inner surface of the window by a distance in a range from 0.02 inch to 0.1 inch.
  • the window protector is comprised of a conducting material.
  • the window protector is comprised of an insulating material.
  • the window protector is comprised of a material having good adhesion properties.
  • the window protector is in the shape of a Faraday shield.
  • a second inductively coupled plasma processing apparatus is provided. This plasma processing apparatus includes a chamber having a top opening. A chuck for holding a wafer being processed is disposed within the chamber.
  • a window seals the top opening of the chamber, and the window has an inner surface that is exposed to an internal region of the chamber.
  • a plurality of window protectors is affixed to the inner surface of the window.
  • Each of the plurality of window protectors has an upper surface that is affixed to the inner surface of the window and a lower surface that is exposed to the internal region of the chamber.
  • the lower surface of each window protector has a cross-sectional width that is larger than a cross-sectional width of the upper surface of each window protector.
  • the plurality of window protectors is arranged on the inner surface of the window in a spaced apart relationship such that each region of the inner surface of the window that is in a line of sight of the wafer being processed is separated from an adjacent window protector by a region of the inner surface of the window that is not in the line of sight of the wafer being processed.
  • each of the plurality of window protectors is comprised of a nonmagnetic metal. In one embodiment, a cross section of each of the plurality of window protectors is T-shaped.
  • a third inductively coupled plasma processing apparatus includes a chamber having a top opening.
  • a window seals the top opening of the chamber, and the window has an inner surface that is exposed to an internal region of the chamber.
  • the inner surface of the window has a plurality of slots formed therein, with the plurality of slots being arranged in the shape of a Faraday shield.
  • Each of the plurality of slots has a slot opening and a slot width, with the slot width being larger than the slot opening.
  • each of the plurality of slots is a T-shaped slot or a dovetail slot cut directly into the window.
  • each of the plurality of slots is a rectangular slot cut directly into the window, and the plasma processing apparatus further includes a window protector mounted against the inner surface of the window.
  • the window protector has a plurality of slots formed therein, with the plurality of slots formed in the window protector corresponding to the plurality of slots formed in the window.
  • Each of the plurality of slots formed in the window has a first slot width and each of the plurality of - A -
  • slots formed in the window protector has a second slot width, with the first slot width being larger than the second slot width.
  • Figure IA is a simplified schematic cross-section showing a plasma processing apparatus in accordance with one embodiment of the invention.
  • Figure IB is a simplified schematic cross-section showing a plasma processing apparatus in accordance with another embodiment of the invention.
  • Figure 2 is a top view of the window protector shown in Figure IA that shows additional details of the window protector.
  • Figure 3A is a simplified cross-sectional view of a plasma processing apparatus that illustrates how the window protector shown in Figure IA shields the dielectric window as material is sputtered from a wafer during a plasma processing operation.
  • Figure 3B shows the shape of the sputtered material deposited on the inner surface of the dielectric window in accordance with one embodiment of the invention.
  • Figure 4 is a simplified cross-sectional view of a plasma processing apparatus that illustrates how the window protector shown in Figure IB shields the dielectric window as material is sputtered from a wafer during a plasma processing operation.
  • Figure 5A illustrates an alternative embodiment of the invention in which T- shaped or dovetail slots are cut directly into the dielectric window.
  • Figure 5B illustrates an alternative embodiment of the invention in which rectangular slots are cut directly into the dielectric window and a window protector having corresponding slots is mounted against the inner surface of the dielectric window.
  • Figure 6 illustrates an embodiment of the invention in which a single window protector is mounted directly against the inner surface of the dielectric window.
  • Figure 7 illustrates an embodiment of the invention in which a plurality of window protectors is disposed just below the inner surface of the dielectric window.
  • FIG. IA is a simplified schematic cross-section showing an inductively coupled plasma processing apparatus in accordance with one embodiment of the invention.
  • semiconductor wafer 10 is mounted on chuck 12 disposed in chamber 100, which is defined by walls of a housing.
  • Coil 14 is supported above dielectric window 16 by, e.g., spacers (not shown), which may be formed of a suitable insulating material.
  • Dielectric window 16 is typically formed of an insulating dielectric material such as fused silica or alumina (Al 2 O 3 ).
  • the primary role of dielectric window 16 is to seal the top opening of chamber 100 so that a vacuum can be maintained within the chamber during processing.
  • a reactant gas is fed into chamber 100 though a suitable gas inlet (not shown).
  • High frequency power from RF power supply 18 is applied to coil 14.
  • the high frequency (RF) current passing through coil 14 induces an electromagnetic field in chamber 100, and the electromagnetic field acts on the reactant gas to generate a plasma. Additional details regarding the structure and operation of an inductively coupled plasma processing apparatus are set forth in U.S. Patent No. US 6,280,253 B l, the disclosure of which is incorporated herein by reference.
  • Window protector 20 which shields a portion of dielectric window 16 from etch byproducts, i.e., material sputtered from the wafer, is disposed within chamber 100 just below inner surface 16a of dielectric window 16. As will be explained in more detail later, window protector 20 is configured to prevent conductive etch byproducts from being deposited on inner surface 16a of dielectric window 16 in the form of a continuous loop.
  • the gap between window protector 20 and inner surface 16a of dielectric window should be narrow enough to avoid any significant plasma generation within the gap, but wide enough to prevent the conductive films deposited on the window protector and the dielectric window from merging with other conductive materials.
  • the gap between window protector 20 and inner surface 16a of dielectric window 16 is between a few hundredths of an inch (e.g., 0.02-0.03 inch) and a tenth of an inch (0.1 inch).
  • the material from which window protector 20 is made may be selected based on a number of factors including compatibility with the plasma and adhesion properties relative to the etch byproduct, i.e., the material being sputtered from the wafer.
  • the window protector may be made of an insulating material, a conducting material, or a material having good adhesion properties.
  • a material having good adhesion properties refers to a material to which the sputtered film has high adhesion.
  • Exemplary insulating materials include the same materials from which the dielectric window is typically made, e.g., fused silica, aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), and high-resistivity silicon carbide (SiC).
  • Exemplary conducting materials include the same materials from which the housing defining the chamber is typically made, e.g., aluminum and anodized aluminum.
  • materials having good adhesion properties as a general rule, thin films of material adhere better to other materials that have the same (or about the same) coefficient of thermal expansion, so that stress does not build up when the materials are heated or cooled.
  • One example of a material having good adhesion properties is, of course, the same material.
  • the sputtered platinum film might adhere well to a platinum (or platinum-coated) window protector.
  • Window protector 20 is supported within chamber 100 by support members 22. As shown in Figure IA, support members 22 are fastened to the sidewall of the housing defining chamber 100. It will be apparent to those skilled in the art that the support members need not be fastened to the sidewall of the housing and that any suitable mechanical support scheme may be used to support window protector 20 within chamber 100. Additional details regarding the structure and functionality of the window protector are described later with reference to Figures 2, 3 A, and 3B.
  • Figure IB is a simplified schematic cross-section showing an inductively coupled plasma processing apparatus in accordance with another embodiment of the invention.
  • the plasma processing apparatus shown in Figure IB is the same as that shown in Figure IA, except that a plurality of window protectors 20' have been substituted for window protector 20.
  • a plurality of window protectors 20' are affixed to dielectric window 16.
  • the upper surface 20'- 1 of each window protector 20' is affixed to inner surface 16a of dielectric window 16.
  • Window protectors 20' may be affixed to inner surface 16a of dielectric window 16 using any suitable fastening technique.
  • Window protectors 20' may be arranged on the inner surface 16a of dielectric window 16 in any pattern that is effective to prevent conductive etch byproducts from being deposited on the inner surface of the dielectric window in the form of a continuous loop.
  • each of window protectors 20' has a cross section that is T-shaped. With a T- shaped configuration, the lower surface 2O'-2 of each window protector 20', i.e., the surface that is exposed to the internal region of chamber 100, has a cross-sectional width that is larger than the cross-sectional width of the upper surface 20'- 1 of each window protector 20'. Additional details regarding the structure and functionality of the plurality of window protectors 20' are described later with reference to Figure 4.
  • FIG 2 is a top view of window protector 20 shown in Figure IA that shows additional details of the window protector.
  • window protector 20 is a relatively thin sheet of material in the physical shape of a Faraday shield. More particularly, window protector 20 has a circular shape and is provided with a number of radially extending slots 20a. The radially extending slots 20a prevent large-scale electrical currents from flowing in a circular pattern, i.e., a continuous loop, in window protector 20 (when the window protector is formed of a conducting material), and thereby render the window protector relatively "transparent" to the inductive coupling between coil 14 and the plasma.
  • the thickness of the window protector is one-eighth of an inch.
  • the diameter of window protector 20 is either the same as or slightly larger than the diameter of the wafer being processed. Those skilled in the art will appreciate that the size of the window protector may be varied to suit the needs of particular applications.
  • a continuous loop and a “continuous loop of material” refer to a circular band of material that is capable of allowing induced electric currents sufficient to impede the inductive coupling between the coil and the plasma to flow in a circular pattern.
  • induced electric currents in very small loops likely will not be sufficient to impede the inductive coupling between the coil and the plasma.
  • a small loop at the center of window protector 20 (see Figure 2) will not impede the inductive coupling between the coil and the plasma because the azimuthal, i.e., circular, induced electric field of an inductively coupled plasma is zero on the central axis.
  • Figure 3A is a simplified cross-sectional view of a plasma processing apparatus that illustrates how window protector 20 shown in Figure IA shields dielectric window 16 as material is sputtered from a wafer during a inductively coupled plasma processing operation.
  • the upwardly directed arrows shown in Figure 3 A depict exemplary lines of sight from wafer 10 to window protector 20 and dielectric window 16.
  • the sputtered material will likely be deposited on any structure within the line of sight of the wafer.
  • sputtered material 22a is deposited on the exposed inner surface of window protector 20 that is in the line of sight of wafer 10.
  • sputtered material 22a corresponds to the shape of window protector 20 (see Figure 2). As such, sputtered material 22a has gaps defined therein and therefore does not form a continuous loop' of material.
  • Sputtered material 22b is deposited on inner surface 16a of dielectric window 16 because portions of the inner surface of the dielectric window are in the line of sight of wafer 10 due to the presence of radially extending slots 20a in window protector 20. As shown in Figure 3 A, no material is sputtered on the portion of inner surface 16a that is not in the line of sight of the wafer due to the presence of window protector 20.
  • sputtered material 22b deposited on inner surface 16a of dielectric window 16 is shown in Figure 3B and corresponds to the shapes of slots 20a formed in window protector 20. As such, sputtered material 22b also has gaps and therefore does not form a continuous loop of material.
  • sputtered material 22a is in the form of a continuous loop.
  • sputtered material 22a is electrically insulated from sputtered material 22b by the gap between window protector 20 and inner surface 16a of dielectric window 16. Consequently, sputtered material 22a and sputtered material 22b should not block the inductive coupling between the coil and the plasma.
  • a significant thickness of sputtered material 22a and 22b can accumulate without adversely affecting plasma generation, and the mean time between cleans (MTBC) for the plasma processing apparatus can be increased.
  • Figure 4 is a simplified cross-sectional view of an inductively coupled plasma processing apparatus that illustrates how window protector 20' shown in Figure IB shields dielectric window 16 as material is sputtered from a wafer during a plasma processing operation.
  • the upwardly directed arrows shown in Figure 4 depict exemplary lines of sight from wafer 10 to window protector 20' and dielectric window 16.
  • the sputtered material will likely be deposited on any structure within the line of sight of the wafer.
  • sputtered material 22a' is deposited on the exposed inner surface 2O'-2 of each window protector 20'.
  • sputtered material 22a' includes a number of separated pieces and therefore is not in the form a continuous loop of material.
  • Sputtered material 22b' is deposited on inner surface 16a of dielectric window 16 because portions of the inner surface of the dielectric window are in the line of sight of wafer 10 due to the spaces between adjacent window protectors 20'.
  • no material is sputtered on portions 16a-l of the inner surface 16a of dielectric window 16 because these portions of the inner surface of the dielectric window are not in the line of sight of wafer 10 due to the T-shaped configuration of window protectors 20'.
  • sputtered material 22b' includes a number of separated pieces, with each piece of sputtered material 22b' being insulated from the adjacent window protectors 20' by a portion 16a- 1 on which no material is sputtered.
  • both sputtered material 22a' and sputtered material 22b' include a number of separated pieces, neither of these sputtered materials is in the form of a continuous loop.
  • sputtered material 22a' is electrically insulated from sputtered material 22b' and window protectors 20' (which may be formed of a conducting material, e.g., a nonmagnetic metal) by the portions 16a-l of the inner surface 16a of dielectric window 16 on which no material is sputtered. Consequently, sputtered material 22a' and sputtered material 22b' should not block the inductive coupling between the coil and the plasma.
  • dielectric window 16' has a T-shaped slot 16'-1 cut directly into the window.
  • dielectric window 16' includes a plurality of slots 16'-1, with the slots being arranged in the shape of a Faraday shield.
  • slot 16'-1 is not limited to the T-shape shown in Figure 5 A and that other shapes having a slot opening that is narrower than the slot width also may be used, e.g., a dovetail shape (see Figure 6).
  • conductive etch byproducts will be deposited on the inner surfaces 16a' of the window as well as on the portions of the surfaces of slot 16'-1 that are in the line of sight of the wafer (the wafer is not shown in Figure 5A).
  • No conductive etch byproducts will be deposited on the portions of the surfaces of slots 16'-1 that are not in the line of sight of the wafer, i.e., the portions of the surfaces that are blocked from the wafer by the narrow openings of the slots.
  • the portions of the surfaces of the slots on which no conductive etch byproducts are deposited prevent the conductive etch byproducts deposited on the inner surface of the dielectric window from making electrical contact with the conductive etch byproducts deposited on the surfaces of the slots.
  • the slots in the dielectric window prevent the conductive etch byproducts from being deposited on the inner surface of the window in the form of a continuous loop. Consequently, the conductive etch byproducts deposited on the dielectric window should not block the inductive coupling between the coil and the plasma.
  • dielectric window 16" has a rectangular slot 16"-1 cut directly into the window.
  • dielectric window 16" includes a plurality of slots 16"-1, with the slots being arranged in the shape of a Faraday shield.
  • Window protector 20" is mounted directly against inner surface 16"a of dielectric window 16".
  • window protector 20" is provided with a number of radially extending slots 20"a that correspond to slots 16"-1 in dielectric window 16", except that the width of slots 20"a is smaller than the width of slots 16"-1.
  • conductive etch byproducts will be deposited on the exposed inner surface of the window protector as well as on the portions of - l i ⁇
  • the slots in the dielectric window in combination with the slots in the window protector, prevent the conductive etch byproducts from being deposited on the inner surface of the window protector and slots in the window in the form of a continuous loop. Consequently, the conductive etch byproducts deposited on the window protector and the dielectric window should not block the inductive coupling between the coil and the plasma.
  • Figure 6 illustrates an embodiment of the invention in which a single window protector is mounted directly against the inner surface of the dielectric window.
  • window protector 20"- 1 is mounted against dielectric window 16 using a suitable mechanical support scheme.
  • Window protector 20"- 1 may have the same configuration as window protector 20 shown in Figures IA and 2, but is provided with a number of radially extending slots 20"- Ia, which have a dovetail-shaped cross section.
  • conductive etch byproducts will be deposited on the exposed surfaces of window protector 20"- Ia and the portions of inner surface 16a of dielectric window 16 that are in the line of sight of the wafer.
  • Neither of these deposits will be in the form of a continuous loop due to the configuration of window protector 20"- 1.
  • No conductive etch byproducts will be deposited on the portions of the inner surface 16a of dielectric window 16 that are not in the line of sight of the wafer, i.e., the portions of the inner surface of the dielectric window that are blocked from the wafer by the narrow openings of the slots.
  • the portions of the inner surface 16a of the dielectric window 16 on which no conductive etch byproducts are deposited prevent the conductive etch byproducts deposited on the inner surface of the dielectric window from making electrical contact with the conductive etch byproducts deposited on the exposed surfaces of window protector 20"- 1.
  • slots 20"- Ia in window protector 20"- 1 prevent the conductive etch byproducts from being deposited on the window protector and the inner surface of the dielectric window in the form of a continuous loop. Consequently, neither the conductive etch byproducts deposited on the window protector nor the conductive etch byproducts deposited on the dielectric window should block the inductive coupling between the coil and the plasma.
  • radially extending slots 20"- Ia may have shaped cross sections other than the dovetail shape shown in Figure 6. By way of example, slots 20"- Ia also may have a T-shaped cross section.
  • Figure 7 illustrates an embodiment of the invention in which a plurality of window protectors is disposed just below the inner surface of the dielectric window.
  • a plurality of window protectors 2O'-x is supported within the chamber such that there is a gap between each window protector and the inner surface 16a of dielectric window 16.
  • the gap between window protectors 2O'-x and inner surface 16a of dielectric window 16 is between a few hundredths of an inch (e.g., 0.02-0.03 inch) and a tenth of an inch (0.1 inch).
  • Each of the window protectors 20'-x has a rectangular cross section and may be supported within the chamber using any suitable support scheme.
  • sputtered material 22a" is deposited on the exposed inner surface 2O'-xl of each window protector 2O'-x. As window protectors 20'- x are separated from one another, sputtered material 22a" includes a number of separated pieces and therefore is not in the form a continuous loop of material. Sputtered material
  • sputtered material 22b" includes a number of separated pieces.
  • both sputtered material 22a" and sputtered material 22b" include a number of separated pieces, neither of these sputtered materials is in the form of a continuous loop.
  • sputtered material 22b" is electrically insulated from sputtered material 22a" and window protectors 2O'-x (which may be formed of a conducting material) by the gap between the window protectors and the inner surface of the dielectric window. Consequently, sputtered material 22a” and sputtered material 22b” should not block the inductive coupling between the coil and the plasma.
  • a significant thickness of sputtered material 22a” and 22b" can accumulate without adversely affecting plasma generation, and the mean time before cleaning (MTBC) for the plasma processing apparatus can be increased.
  • MTBC mean time before cleaning
  • the phrase "means for protecting the inner surface of the window from having conductive etch byproducts deposited thereon in the form of a continuous loop” includes all of the window protection structures shown and described herein. These structures include a single window protector separated from the window by a gap (as shown in Figures IA and 3A), a single window protector having a shaped cross section in contact with the window (as shown in Figure 6), a plurality of window protectors separated from the window (as shown in Figure 7), a plurality of window protectors having a shaped cross section in contact with the window (as shown in Figures IB and 4), and a window having slots cut directly therein (as shown in Figures 5A (without a window protector) and 5B (with a window protector)).
  • the present invention provides an inductively coupled plasma processing apparatus that prevents conductive etch byproducts from being deposited on the inner surface of the window in the form of a continuous loop.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un appareil de traitement au plasma couplé de manière inductive qui comporte une chambre (100) présentant une ouverture supérieure. Une fenêtre (16) ferme hermétiquement ladite ouverture supérieure de la chambre, ladite fenêtre ayant une surface intérieure exposée à une zone interne de la chambre. Un protecteur de fenêtre (20) qui protège la surface intérieure de la fenêtre est placé à l'intérieur de la chambre. Ledit protecteur de fenêtre (20) est destiné à empêcher des sous-produits de gravure de se déposer sur la surface intérieure de la fenêtre sous forme de boucle continue. Dans un mode de réalisation, plusieurs protecteurs de fenêtre (20') sont fixés à la surface intérieure de la fenêtre. Dans un autre mode de réalisation, la fenêtre est dotée de plusieurs fentes en T ou en queue d'aronde. Dans un autre mode de réalisation encore, plusieurs fentes rectangulaires sont formées dans la fenêtre et un protecteur de fenêtre doté de fentes correspondantes est monté sur la surface intérieure de la fenêtre.
PCT/US2005/046930 2004-12-28 2005-12-22 Protecteur de fenetre pour gravure par pulverisation de couches metalliques WO2006071816A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007549527A JP2008526047A (ja) 2004-12-28 2005-12-22 金属層のスパッタエッチングのための窓保護材

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/025,490 2004-12-28
US11/025,490 US20060137821A1 (en) 2004-12-28 2004-12-28 Window protector for sputter etching of metal layers

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WO2006071816A2 true WO2006071816A2 (fr) 2006-07-06
WO2006071816A3 WO2006071816A3 (fr) 2007-02-22

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JP (1) JP2008526047A (fr)
KR (1) KR20070091306A (fr)
CN (1) CN101094938A (fr)
WO (1) WO2006071816A2 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010050188A (ja) * 2008-08-20 2010-03-04 Panasonic Corp プラズマドーピング装置

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* Cited by examiner, † Cited by third party
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US7959775B2 (en) * 2006-09-29 2011-06-14 Tokyo Electron Limited Thermal stress-failure-resistant dielectric windows in vacuum processing systems
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KR20070091306A (ko) 2007-09-10

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