WO2006071816A3 - Protecteur de fenetre pour gravure par pulverisation de couches metalliques - Google Patents

Protecteur de fenetre pour gravure par pulverisation de couches metalliques Download PDF

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Publication number
WO2006071816A3
WO2006071816A3 PCT/US2005/046930 US2005046930W WO2006071816A3 WO 2006071816 A3 WO2006071816 A3 WO 2006071816A3 US 2005046930 W US2005046930 W US 2005046930W WO 2006071816 A3 WO2006071816 A3 WO 2006071816A3
Authority
WO
WIPO (PCT)
Prior art keywords
window
chamber
protector
metal layers
sputter etching
Prior art date
Application number
PCT/US2005/046930
Other languages
English (en)
Other versions
WO2006071816A2 (fr
Inventor
Arthur M Howald
Tuqiang Ni
Original Assignee
Lam Res Corp
Arthur M Howald
Tuqiang Ni
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp, Arthur M Howald, Tuqiang Ni filed Critical Lam Res Corp
Priority to JP2007549527A priority Critical patent/JP2008526047A/ja
Publication of WO2006071816A2 publication Critical patent/WO2006071816A2/fr
Publication of WO2006071816A3 publication Critical patent/WO2006071816A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un appareil de traitement au plasma couplé de manière inductive qui comporte une chambre (100) présentant une ouverture supérieure. Une fenêtre (16) ferme hermétiquement ladite ouverture supérieure de la chambre, ladite fenêtre ayant une surface intérieure exposée à une zone interne de la chambre. Un protecteur de fenêtre (20) qui protège la surface intérieure de la fenêtre est placé à l'intérieur de la chambre. Ledit protecteur de fenêtre (20) est destiné à empêcher des sous-produits de gravure de se déposer sur la surface intérieure de la fenêtre sous forme de boucle continue. Dans un mode de réalisation, plusieurs protecteurs de fenêtre (20') sont fixés à la surface intérieure de la fenêtre. Dans un autre mode de réalisation, la fenêtre est dotée de plusieurs fentes en T ou en queue d'aronde. Dans un autre mode de réalisation encore, plusieurs fentes rectangulaires sont formées dans la fenêtre et un protecteur de fenêtre doté de fentes correspondantes est monté sur la surface intérieure de la fenêtre.
PCT/US2005/046930 2004-12-28 2005-12-22 Protecteur de fenetre pour gravure par pulverisation de couches metalliques WO2006071816A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007549527A JP2008526047A (ja) 2004-12-28 2005-12-22 金属層のスパッタエッチングのための窓保護材

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/025,490 US20060137821A1 (en) 2004-12-28 2004-12-28 Window protector for sputter etching of metal layers
US11/025,490 2004-12-28

Publications (2)

Publication Number Publication Date
WO2006071816A2 WO2006071816A2 (fr) 2006-07-06
WO2006071816A3 true WO2006071816A3 (fr) 2007-02-22

Family

ID=36610036

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2005/046930 WO2006071816A2 (fr) 2004-12-28 2005-12-22 Protecteur de fenetre pour gravure par pulverisation de couches metalliques

Country Status (5)

Country Link
US (1) US20060137821A1 (fr)
JP (1) JP2008526047A (fr)
KR (1) KR20070091306A (fr)
CN (1) CN101094938A (fr)
WO (1) WO2006071816A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7959775B2 (en) * 2006-09-29 2011-06-14 Tokyo Electron Limited Thermal stress-failure-resistant dielectric windows in vacuum processing systems
JP2010050188A (ja) * 2008-08-20 2010-03-04 Panasonic Corp プラズマドーピング装置
CN102543636B (zh) * 2010-12-27 2015-04-15 北京北方微电子基地设备工艺研究中心有限责任公司 法拉第屏蔽及等离子体加工设备
CN104217916B (zh) * 2014-08-20 2017-07-28 上海天马有机发光显示技术有限公司 一种刻蚀装置、刻蚀系统及刻蚀终点探测方法
US20180143332A1 (en) 2016-11-18 2018-05-24 Plasma-Therm Llc Ion Filter
CN108735622B (zh) * 2017-04-20 2021-10-15 北京北方华创微电子装备有限公司 反应腔室和半导体加工设备
US20210391150A1 (en) * 2020-06-10 2021-12-16 Plasma-Therm Llc Plasma Source Configuration

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904780A (en) * 1996-05-02 1999-05-18 Tokyo Electron Limited Plasma processing apparatus
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6565717B1 (en) * 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5763851A (en) * 1995-11-27 1998-06-09 Applied Materials, Inc. Slotted RF coil shield for plasma deposition system
US5800688A (en) * 1997-04-21 1998-09-01 Tokyo Electron Limited Apparatus for ionized sputtering
WO1999029923A1 (fr) * 1997-12-05 1999-06-17 Tegal Corporation Reacteur a plasma avec blindage de depot
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US20040194890A1 (en) * 2001-09-28 2004-10-07 Tokyo Electron Limited Hybrid plasma processing apparatus
US6946054B2 (en) * 2002-02-22 2005-09-20 Tokyo Electron Limited Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
KR101001743B1 (ko) * 2003-11-17 2010-12-15 삼성전자주식회사 헬리컬 자기-공진 코일을 이용한 이온화 물리적 기상 증착장치
US7273533B2 (en) * 2003-11-19 2007-09-25 Tokyo Electron Limited Plasma processing system with locally-efficient inductive plasma coupling

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904780A (en) * 1996-05-02 1999-05-18 Tokyo Electron Limited Plasma processing apparatus
US6565717B1 (en) * 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma

Also Published As

Publication number Publication date
CN101094938A (zh) 2007-12-26
JP2008526047A (ja) 2008-07-17
WO2006071816A2 (fr) 2006-07-06
KR20070091306A (ko) 2007-09-10
US20060137821A1 (en) 2006-06-29

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