WO2006071816A3 - Protecteur de fenetre pour gravure par pulverisation de couches metalliques - Google Patents
Protecteur de fenetre pour gravure par pulverisation de couches metalliques Download PDFInfo
- Publication number
- WO2006071816A3 WO2006071816A3 PCT/US2005/046930 US2005046930W WO2006071816A3 WO 2006071816 A3 WO2006071816 A3 WO 2006071816A3 US 2005046930 W US2005046930 W US 2005046930W WO 2006071816 A3 WO2006071816 A3 WO 2006071816A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- window
- chamber
- protector
- metal layers
- sputter etching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Abstract
L'invention concerne un appareil de traitement au plasma couplé de manière inductive qui comporte une chambre (100) présentant une ouverture supérieure. Une fenêtre (16) ferme hermétiquement ladite ouverture supérieure de la chambre, ladite fenêtre ayant une surface intérieure exposée à une zone interne de la chambre. Un protecteur de fenêtre (20) qui protège la surface intérieure de la fenêtre est placé à l'intérieur de la chambre. Ledit protecteur de fenêtre (20) est destiné à empêcher des sous-produits de gravure de se déposer sur la surface intérieure de la fenêtre sous forme de boucle continue. Dans un mode de réalisation, plusieurs protecteurs de fenêtre (20') sont fixés à la surface intérieure de la fenêtre. Dans un autre mode de réalisation, la fenêtre est dotée de plusieurs fentes en T ou en queue d'aronde. Dans un autre mode de réalisation encore, plusieurs fentes rectangulaires sont formées dans la fenêtre et un protecteur de fenêtre doté de fentes correspondantes est monté sur la surface intérieure de la fenêtre.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007549527A JP2008526047A (ja) | 2004-12-28 | 2005-12-22 | 金属層のスパッタエッチングのための窓保護材 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/025,490 US20060137821A1 (en) | 2004-12-28 | 2004-12-28 | Window protector for sputter etching of metal layers |
US11/025,490 | 2004-12-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006071816A2 WO2006071816A2 (fr) | 2006-07-06 |
WO2006071816A3 true WO2006071816A3 (fr) | 2007-02-22 |
Family
ID=36610036
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/046930 WO2006071816A2 (fr) | 2004-12-28 | 2005-12-22 | Protecteur de fenetre pour gravure par pulverisation de couches metalliques |
Country Status (5)
Country | Link |
---|---|
US (1) | US20060137821A1 (fr) |
JP (1) | JP2008526047A (fr) |
KR (1) | KR20070091306A (fr) |
CN (1) | CN101094938A (fr) |
WO (1) | WO2006071816A2 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7959775B2 (en) * | 2006-09-29 | 2011-06-14 | Tokyo Electron Limited | Thermal stress-failure-resistant dielectric windows in vacuum processing systems |
JP2010050188A (ja) * | 2008-08-20 | 2010-03-04 | Panasonic Corp | プラズマドーピング装置 |
CN102543636B (zh) * | 2010-12-27 | 2015-04-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 法拉第屏蔽及等离子体加工设备 |
CN104217916B (zh) * | 2014-08-20 | 2017-07-28 | 上海天马有机发光显示技术有限公司 | 一种刻蚀装置、刻蚀系统及刻蚀终点探测方法 |
US20180143332A1 (en) | 2016-11-18 | 2018-05-24 | Plasma-Therm Llc | Ion Filter |
CN108735622B (zh) * | 2017-04-20 | 2021-10-15 | 北京北方华创微电子装备有限公司 | 反应腔室和半导体加工设备 |
US20210391150A1 (en) * | 2020-06-10 | 2021-12-16 | Plasma-Therm Llc | Plasma Source Configuration |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5904780A (en) * | 1996-05-02 | 1999-05-18 | Tokyo Electron Limited | Plasma processing apparatus |
US6132566A (en) * | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
US6565717B1 (en) * | 1997-09-15 | 2003-05-20 | Applied Materials, Inc. | Apparatus for sputtering ionized material in a medium to high density plasma |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5763851A (en) * | 1995-11-27 | 1998-06-09 | Applied Materials, Inc. | Slotted RF coil shield for plasma deposition system |
US5800688A (en) * | 1997-04-21 | 1998-09-01 | Tokyo Electron Limited | Apparatus for ionized sputtering |
EP1038046A4 (fr) * | 1997-12-05 | 2006-08-02 | Tegal Corp | Reacteur a plasma avec blindage de depot |
US6287435B1 (en) * | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
US20040194890A1 (en) * | 2001-09-28 | 2004-10-07 | Tokyo Electron Limited | Hybrid plasma processing apparatus |
US6946054B2 (en) * | 2002-02-22 | 2005-09-20 | Tokyo Electron Limited | Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing |
KR101001743B1 (ko) * | 2003-11-17 | 2010-12-15 | 삼성전자주식회사 | 헬리컬 자기-공진 코일을 이용한 이온화 물리적 기상 증착장치 |
US7273533B2 (en) * | 2003-11-19 | 2007-09-25 | Tokyo Electron Limited | Plasma processing system with locally-efficient inductive plasma coupling |
-
2004
- 2004-12-28 US US11/025,490 patent/US20060137821A1/en not_active Abandoned
-
2005
- 2005-12-22 CN CNA2005800452686A patent/CN101094938A/zh active Pending
- 2005-12-22 KR KR1020077014700A patent/KR20070091306A/ko not_active Application Discontinuation
- 2005-12-22 WO PCT/US2005/046930 patent/WO2006071816A2/fr active Application Filing
- 2005-12-22 JP JP2007549527A patent/JP2008526047A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5904780A (en) * | 1996-05-02 | 1999-05-18 | Tokyo Electron Limited | Plasma processing apparatus |
US6565717B1 (en) * | 1997-09-15 | 2003-05-20 | Applied Materials, Inc. | Apparatus for sputtering ionized material in a medium to high density plasma |
US6132566A (en) * | 1998-07-30 | 2000-10-17 | Applied Materials, Inc. | Apparatus and method for sputtering ionized material in a plasma |
Also Published As
Publication number | Publication date |
---|---|
CN101094938A (zh) | 2007-12-26 |
JP2008526047A (ja) | 2008-07-17 |
WO2006071816A2 (fr) | 2006-07-06 |
US20060137821A1 (en) | 2006-06-29 |
KR20070091306A (ko) | 2007-09-10 |
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