WO2006069476A1 - Procede de suppression harmonique destine a un emetteur-recepteur bs et dispositif rf frontal - Google Patents

Procede de suppression harmonique destine a un emetteur-recepteur bs et dispositif rf frontal Download PDF

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Publication number
WO2006069476A1
WO2006069476A1 PCT/CN2004/001541 CN2004001541W WO2006069476A1 WO 2006069476 A1 WO2006069476 A1 WO 2006069476A1 CN 2004001541 W CN2004001541 W CN 2004001541W WO 2006069476 A1 WO2006069476 A1 WO 2006069476A1
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WO
WIPO (PCT)
Prior art keywords
low noise
noise amplifier
state
gate voltage
gate
Prior art date
Application number
PCT/CN2004/001541
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English (en)
Chinese (zh)
Inventor
Minde Yu
Jianli Liu
Jianhua Mao
Original Assignee
Zte Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zte Corporation filed Critical Zte Corporation
Priority to PCT/CN2004/001541 priority Critical patent/WO2006069476A1/fr
Publication of WO2006069476A1 publication Critical patent/WO2006069476A1/fr

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication
    • H04B1/52—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa
    • H04B1/525—Hybrid arrangements, i.e. arrangements for transition from single-path two-direction transmission to single-direction transmission on each of two paths or vice versa with means for reducing leakage of transmitter signal into the receiver

Definitions

  • the present invention relates to a mobile communication system employing a time division duplex (TDD) mode of operation, and more particularly to a method for suppressing harmonics of a radio frequency front end device for a base transceiver station of the above communication system and a radio frequency front end device for implementing the same .
  • TDD time division duplex
  • the RF front-end equipment of high-performance transceivers has become an indispensable and important component.
  • the transmission capacity of the communication system is getting larger and larger, and the frequency interval of the channel is getting denser and denser.
  • the mobile station can normally receive the transmission signal of the base station while avoiding interference.
  • the normal operation of other communication systems requires that the transmit power of the RF front-end of the base transceiver station and the out-of-band spurious harmonics can meet the increasingly high requirements of modern communication systems.
  • the radio frequency front end device of the general TDD transceiver mainly includes a radio frequency switch 101, a power amplifier 102, a low noise amplifier 103, and a baseband circuit 104, as shown in FIG. 1, wherein the baseband circuit 104 controls the operation of other components.
  • the RF switch 101 When the TDD communication system is in the receiving state, the RF switch 101 is switched to the receiving state, and the low noise amplifier 103 is in the working state, so that the low noise amplifier 103 and the RF switch 101 form a receiving channel, and the RF signal received by the antenna is amplified. And output to the subsequent receiving circuit to process these signals.
  • the signal output from the receiving channel not only needs to meet the requirements of the communication system, but also has a lower noise figure for the entire receiving channel.
  • the low noise amplifier 103 of the receiving channel is usually constituted by a Pseudomorphic High Electron Moment Transistor (PHEMT) field effect transistor having a low noise figure.
  • PHEMT Pseudomorphic High Electron Moment Transistor
  • the power amplifier 102 When the TDD communication system is in the transmitting state, the power amplifier 102 operates, and the RF switch 101 switches to the transmitting state, so that the RF switch 101 and the power amplifier 102 form a transmitting channel, and the RF transmitting signal outputted by the transmitting circuit is amplified. Making the output RF signal reach the communication system The required output power is then radiated into the air via the antenna. In order to ensure the coverage of the communication system and avoid interference with the normal operation of other communication systems, there are certain requirements for the transmission power, transmission spurs and harmonics of the transmission channel.
  • the generation of harmonics in the RF front-end device of the base station signal is usually caused by the nonlinearity of the power amplifier 102 and the RF switch 101 therein, and at the same time, due to the limited isolation of the RF switch 101, the RF signal is transmitted.
  • the transmit time slot can be leaked through the RF switch 101 to the low noise amplifier 103 of the receive channel, which also produces harmonics.
  • any one of the following three methods is generally used in the prior art: First, a filter is added to the common end of the transmitting and receiving channels of the RF switch 101, thereby harmonics The suppression is performed; the second is to add a filter in front of the low noise amplifier 103 of the receiving channel to suppress the harmonics caused by the receiving channel; the third is to improve the isolation of the RF switch 101 and reduce the leakage to the receiving channel.
  • the noise amplifier 103 emits a level of the leakage signal, thereby reducing the harmonic signal caused by the low noise amplifier 103, but this method increases the insertion loss of the RF switch 101 as the isolation of the RF switch 101 is improved.
  • the above three methods all have an additional insertion loss in front of the low noise amplifier 103 of the receiving channel, which affects the noise figure of the system receiving channel, thereby affecting the uplink coverage of the system, and the system is correspondingly
  • the design of the filter or RF switch 101 is also limited, which increases the overall system cost and complicates the design of the entire system.
  • the invention is based on the problems existing in the prior art, and aims to provide a harmonic suppression method and a radio frequency front-end device for a radio frequency front-end device in a base transceiver station, so as to reduce leakage due to transmission signal
  • the harmonic signal generated in the low-noise amplifier of the channel and overcomes the problem that the noise figure of the receiving channel rises due to the introduction of additional loss in the prior art, thereby affecting the uplink receiving sensitivity of the system and limiting the selection of the RF switch.
  • a harmonic suppression method for a radio frequency front end device in a base transceiver station wherein a low noise amplifier in the transceiver is constructed using a PHEMT FET, the method comprising: transmitting and receiving according to a base station The operating state of the machine switches the gate negative gate voltage of the low noise amplifier to operate the low noise amplifier in different states.
  • the method specifically includes: when the base transceiver station is in a state of receiving a signal, controlling a gate negative gate voltage of the low noise amplifier to operate the gate negative gate voltage at a static operating point; when the base transceiver station When in the state of the transmitted signal, the gate negative gate voltage of the low noise amplifier is controlled, so that the low noise amplifier is in the deep cutoff state.
  • a radio frequency front end apparatus for a base transceiver station including:
  • An RF switch for converting a receiving channel and a transmitting channel
  • the power amplifier is used to discharge the RF signal output from the circuit, and is transmitted through the antenna.
  • the low noise amplifier is composed of a PHEMT FET, and is used for linear low noise amplification of the RF signal received by the antenna, and output to the receiving circuit. ; as well as
  • a gate voltage switching control circuit for controlling a gate negative gate voltage of the low noise amplifier; a baseband circuit for controlling the RF switch, the power amplifier, the low noise amplifier, and the gate voltage switching Control the working state of the circuit.
  • the invention increases the gate voltage switching control circuit in the TDD system transceiver, and switches the gate (also referred to as G pole) voltage of the low noise amplifier composed of the PHEMT FET to reduce the signal due to the transmission.
  • the harmonic signal generated by the low noise amplifier leaking into the receiving channel has a signal level reduced by about 15-20 dB.
  • the newly added switching control circuit is simple in implementation, which greatly reduces system cost and design complexity.
  • the present invention does not introduce additional loss on the transceiver channel, and thus does not affect the receiving sensitivity of the system.
  • the present invention is applicable to a base station system of a time division duplex system in which the gate of a low noise amplifier requires a negative gate voltage.
  • FIG. 1 is a schematic structural diagram of a transceiver radio frequency front end device in the prior art
  • 2 is a flow chart of a method for suppressing harmonics of a radio frequency front end device according to the present invention
  • FIG. 3 is a schematic structural view of a radio frequency front end device according to an embodiment of the present invention
  • FIG. 4 is another schematic view of the present invention.
  • FIG. 5 is a timing diagram of the operating state of the RF front end device and the gate bias voltage of the low noise amplifier in the embodiment shown in FIG. 4.
  • step 210 when the transceiver is in the state of receiving the signal, the gate negative gate voltage of the low noise amplifier is controlled to operate the low noise amplifier at the static working point while turning on the receiving channel; When the transceiver is in the state of transmitting signals, the transmitting channel is turned on, and the gate negative gate voltage of the low noise amplifier is controlled at the same time, so that the low noise amplifier is in the depth cut-off state.
  • the level of the harmonic signal generated by the leakage of the power of the transmission signal to the low noise amplifier can be effectively reduced.
  • FIG. 3 is a schematic structural diagram of a radio frequency front end device according to an embodiment of the present invention, which mainly includes the following components: a radio frequency switch 101, a power amplifier 102, a low noise amplifier 103 composed of a PHEMT field effect transistor, a baseband circuit 304, and a new one.
  • the gate voltage switching control circuit 305 among them:
  • the RF transceiver switch 101 is connected to the antenna, and is mainly used for realizing the conversion of the transceiver channel in the transceiver. According to the needs of the system, the time slot conversion of the «_ channel is completed, so that the TDD system completes the time division duplex of the transmission and reception switching.
  • the power amplifier 102 is configured to put the RF signal outputted by the transmitting circuit in the transceiver Large, making it meet the system's required output power, and through the RF switch when the signaling channel is turned on
  • the low noise amplifier 103 performs linear low noise amplification on the radio frequency signals received by the antenna and the radio frequency switch 101 when the receiving channel is turned on, so that the level and the signal to noise ratio of the radio frequency signals can reach the requirements of the system after being amplified. Then outputting to the receiving circuit for further processing; in the embodiment, the low noise amplifier 103 is a PHEMT FET;
  • the gate voltage switching control circuit 305 performs switching control on the gate negative gate voltage of the low noise amplifier 103, that is, when the system is in the receiving or transmitting state, the gate negative gate voltage is controlled differently, so that the low noise amplifier 103 is placed. Different working conditions;
  • the baseband control circuit 304 performs control of the RF switch 101, the power amplifier 102, the low noise amplifier 103, and the gate voltage switching control circuit 305, that is, these components are all based on the control signal output from the baseband control circuit 304. Operate.
  • the baseband circuit 304 When the system is in the receiving state, the baseband circuit 304 outputs a control signal of the radio frequency switch 101 according to the timing requirement of the system. Under the action of the control signal, the radio frequency switch 101 completes the state switching and is in the receiving working state.
  • the baseband circuit 304 controls the operating state of the gate voltage switching control circuit 305, and then under the control of the gate voltage switching control circuit 305, the gate negative bias of the low noise amplifier 103 operates to satisfy the static required for normal amplification of the low noise amplifier.
  • the baseband circuit 304 controls the low noise amplifier 103 to be in the receiving state, so that the receiving channel formed by the RF switch 101 and the low noise amplifier 103 is turned on, and the RF front end device is in the receiving channel state.
  • the RF signal received by the antenna is amplified by the RF switch 101, the low noise amplifier 103, and output to the receiving circuit of the subsequent transceiver.
  • the baseband circuit 304 When the system is in the transmitting state, the baseband circuit 304 outputs a control signal of the radio frequency switch 101 according to the timing requirement of the system. Under the action of the control signal, the radio frequency switch 101 completes the state switching and is in the transmitting working state.
  • the baseband control circuit 304 sends a control signal to cause the power amplifier 102 to be in a transmitting state, such that the transmitting channel formed by the RF switch 101 and the power amplifier 102 is turned on, and the RF front end device is in the transmitting channel state.
  • the baseband circuit 304 controls the operating state of the gate voltage switching control circuit 305 to cause the gate negative gate voltage of the low noise amplifier 103. The increase is such that the low noise amplifier 103 is in the depth cutoff state.
  • the RF signal output by the transmitting channel is transmitted through the RF switch 101 and the antenna.
  • the working principle and process of the gate voltage switching control circuit 305 are specifically described below:
  • the transmitting channel is turned on, and the RF signal to be transmitted is amplified by the power amplifier 102 and input to the RF switch 101.
  • Most of the RF signal is radiated into the air through the antenna, and a small portion of the signal leaks to the low noise amplifier 103 of the receiving channel due to the limited isolation of the RF switch 101, and generates harmonics under the nonlinear action of the low noise amplifier 103.
  • the signal is then radiated into the air via the RF switch 101 and the antenna.
  • the baseband circuit 304 controls the operating state of the gate voltage switching control circuit 305 to increase the gate negative gate voltage of the low noise amplifier 103, thereby making the PHEMT field effect transistor conductive.
  • the channel is completely turned off under the strong electric field formed by the high negative voltage of the gate, causing the FET to be non-conductive.
  • the PHEMT FET constituting the low noise amplifier 103 is always in the depth cut-off state, and in this case, the input of the FET
  • the operating states such as impedance and forward transfer admittance are substantially independent of the magnitude of the applied signal within a certain range, so the nonlinearity of the low noise amplifier 103 is improved, and the level of the harmonic signal due to the nonlinearity of the low noise amplifier 103 is also Reduced.
  • the value of the negative gate voltage applied to the PHEMT FET gate should be selected: After considering the influence of the RF leakage signal, the peak voltage of the PHEMT FET does not exceed The breakdown voltage of the gate.
  • the receiving channel When the RF front-end device is in the receiving state, the receiving channel is turned on, the baseband circuit 304 controls the operating state of the gate voltage switching control circuit 305, and the gate negative gate voltage of the low noise amplifier 103 is operated to satisfy the normal amplification of the low noise amplifier. The static working point required.
  • the present embodiment can reduce the harmonic signal due to the nonlinearity of the low noise amplifier, and is simple in design and easy to implement.
  • FIG. 4 is a schematic structural view of a radio frequency front end device according to another embodiment of the present invention, wherein the same portions as those of the embodiment shown in FIG. 3 are denoted by the same reference numerals, and the description thereof will be omitted.
  • the embodiment shown in FIG. 4 is a specific implementation of the embodiment shown in FIG. 3, and a low noise amplifier 103 is shown. The specific structure is indicated.
  • the RF switch 101 adopts a universal single-pole double-throw RF integrated switch 401, and the control pin is connected to the RF switch control signal outputted by the baseband circuit 304.
  • the other three ports are respectively connected to the output port of the antenna and the power amplifier 102.
  • the input port of the low noise amplifier 103 uses a common dual-supply PHEMT amplifier, including resistors R1, R2, R3, inductor L1, and PHEMT FET.
  • the gate voltage switching control circuit 305 is composed of a high speed digital multiplexer 405.
  • the baseband circuit 304 When the system is operating in the receiving state, the baseband circuit 304 outputs the control signal of the radio frequency switch 101, so that the radio frequency switch 101 completes the switching of the working state under the action of the control signal, and operates in the receiving state. At the same time, the baseband circuit 304 also controls the low noise amplifier 103 to be in the receiving operation state, and controls the XI-X path of the high speed digital multiplexer 405 to be turned on, so that the -5V voltage is applied to the resistor R2 through the resistors R1 and X1-X.
  • the inductor L1 is connected to the gate of the PHEMT FET, so that the gate negative gate voltage of the PHEMT FET is obtained by dividing the voltage of -5V through the voltage dividers R1 and R2. Therefore, reasonable selection of the values of the resistors R1, R2 can make the gate of the PHEMT FET obtain a suitable bias voltage, so that the low noise amplifier 103 composed of the PHEMT FET operates in an amplified state, thus, by the RF switch 101 and low.
  • the receiving channel formed by the noise amplifier 103 is in a normal working state, thereby realizing a low noise amplifying function for the antenna input RF signal.
  • the baseband circuit 304 When the system is operating in the transmitting state, the baseband circuit 304 outputs the control signals of the RF switch 101 and the power amplifier 102, respectively, so that the RF switch 101 and the power amplifier 102 complete the switching of the working state, and work in the transmitting state to implement the transceiver. The normal amplification function of the output signal.
  • the baseband circuit 304 controls the high speed digital multiplexer 405 to strobe the X0-X path, so that the -5V voltage is applied to the resistor R2 through the resistors R3 and X0-X, and then connected to the gate of the PHEMT FET through the inductor L1.
  • the gate negative gate voltage of the PHEMT FET is obtained by dividing the voltage of -5V through the voltage dividers of resistors R3 and R2. Therefore, the value of the selection resistor R3 is much smaller than the value of the resistor R2, so that the voltage drop across the resistor R3 is negligible, then the bias voltage obtained by the PHEMT FET gate will be close to the supply voltage -5V, so that the PHEMT FET
  • the constructed low noise amplifier 103 operates in a deep cut-off state, which improves the linear performance of the low noise amplifier, thereby reducing the harmonic signal level of the system.
  • the operation state of the embodiment shown in Fig. 4 and the timing of the gate bias voltage of the low noise amplifier 103 are as shown in Fig. 5.
  • the present embodiment can reduce the harmonics caused by leakage of the signaling signal to the low noise amplifier by controlling the gate bias voltage of the low noise amplifier without changing the control software of the original baseband. signal.

Abstract

L'invention concerne un procédé de suppression harmonique destiné à un dispositif RF frontal dans un émetteur-récepteur BS dans lequel un amplificateur à faible bruit (LNA) comprend PHEMT FET, comprenant les étapes consistant à commander une polarisation de grille négative du LNA de manière à travailler sur un point fonctionnel quiescent quand l'émetteur-récepteur BS se trouve dans un état de réception de signaux ; et à commander une polarisation de grille négative du LNA de manière à placer celui-ci dans un état d'élagage profond quand l'émetteur-récepteur BS se trouve dans un état d'émission de signaux. Le procédé selon l'invention permet de réduire les signaux harmoniques résultant de la fuite de signaux d'émission dans le LNA d'un canal récepteur, le niveau de signal étant réduit d'environ 15-20 dB ; en même temps, le procédé selon l'invention n'introduit pas de perte supplémentaire sur les canaux émetteurs et récepteurs et ne peut, par conséquent, avoir d'effet sur la sensibilité de réception du système.
PCT/CN2004/001541 2004-12-28 2004-12-28 Procede de suppression harmonique destine a un emetteur-recepteur bs et dispositif rf frontal WO2006069476A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2004/001541 WO2006069476A1 (fr) 2004-12-28 2004-12-28 Procede de suppression harmonique destine a un emetteur-recepteur bs et dispositif rf frontal

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Application Number Priority Date Filing Date Title
PCT/CN2004/001541 WO2006069476A1 (fr) 2004-12-28 2004-12-28 Procede de suppression harmonique destine a un emetteur-recepteur bs et dispositif rf frontal

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012013240A1 (fr) * 2010-07-30 2012-02-02 Laird Technologies Ab Dispositif d'antenne auxiliaire, ensemble d'antennes et dispositif de radiocommunication portatif

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1278677A (zh) * 1999-06-17 2001-01-03 明碁电脑股份有限公司 可动态调整低噪声放大器工作偏压点的无线电收发系统
JP2001196966A (ja) * 2000-01-17 2001-07-19 Oki Electric Ind Co Ltd Ｃｄｍａ送受信装置
GB2362523A (en) * 1999-05-28 2001-11-21 Acer Peripherals Inc A transceiver with the bias of an amplifier in the receiver controlled by a baseband processor
KR20040032672A (ko) * 2002-10-10 2004-04-17 한국전자통신연구원 순방향 제거 기법을 이용한 수신기

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2362523A (en) * 1999-05-28 2001-11-21 Acer Peripherals Inc A transceiver with the bias of an amplifier in the receiver controlled by a baseband processor
CN1278677A (zh) * 1999-06-17 2001-01-03 明碁电脑股份有限公司 可动态调整低噪声放大器工作偏压点的无线电收发系统
JP2001196966A (ja) * 2000-01-17 2001-07-19 Oki Electric Ind Co Ltd Ｃｄｍａ送受信装置
KR20040032672A (ko) * 2002-10-10 2004-04-17 한국전자통신연구원 순방향 제거 기법을 이용한 수신기

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012013240A1 (fr) * 2010-07-30 2012-02-02 Laird Technologies Ab Dispositif d'antenne auxiliaire, ensemble d'antennes et dispositif de radiocommunication portatif

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