WO2006062645A2 - Schema de regulation de puissance pour une sortie de haute tension dans des dispositifs a circuit integre - Google Patents
Schema de regulation de puissance pour une sortie de haute tension dans des dispositifs a circuit integre Download PDFInfo
- Publication number
- WO2006062645A2 WO2006062645A2 PCT/US2005/040223 US2005040223W WO2006062645A2 WO 2006062645 A2 WO2006062645 A2 WO 2006062645A2 US 2005040223 W US2005040223 W US 2005040223W WO 2006062645 A2 WO2006062645 A2 WO 2006062645A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- current
- clamp
- voltage
- high voltage
- mirror
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
Definitions
- the invention relates to high voltage generators for regulated power output and use in integrated circuit devices.
- a waveform diagram 400 of an exemplary regulated high voltage generator of the present invention includes the generation of a gated clock signal 407 as the oscillator enable signal 401 transitions to a high logic level with a low logic level of a stop oscillator signal 480 at an oscillator enable time 450.
- the charge pump 310 receives the gated clock signal 407 and produces a regulated high voltage 412 at the charge pump output 312 (FIG. 3) .
- the regulated high voltage 412 starts at a voltage between zero volts and the supply voltage and rises to a clamp voltage limit controlled by the high voltage clamp 330.
- the clamp voltage limit is reached at a high voltage clamp time 470.
- the period that the regulated high voltage 412 rises from an initial voltage to the clamp voltage limit at the high voltage clamp time 470 defines a high voltage ramp time 460.
- the stop oscillator signal 480 going high causes the gated clock signal 407 coming from the gated oscillator 305 to cease.
- the clamp current 335 decreases once the gated clock signal 407 stops.
- the regulated high voltage 412 remains approximately the same for a majority of an oscillator suspension time 490, described infra, but declines by, for example, when a few tens of millivolts during the oscillator suspension time 490.
- the clamp current 335 decreases, the clamp mirror current 375 decreases and the buffer input voltage 479 begins to rise. Eventually the clamp current 335 decreases enough that the buffer input voltage 479 rises above the gate threshold of the buffer 380.
Abstract
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0413074A FR2878986B1 (fr) | 2004-12-08 | 2004-12-08 | Principe de regulation de puissance d'une sortie a haute tension dans des dispositifs de circuits integres |
FR04/13074 | 2004-12-08 | ||
US11/075,109 | 2005-03-08 | ||
US11/075,109 US7808300B2 (en) | 2004-12-08 | 2005-03-08 | Power regulation scheme for a high voltage output in integrated circuit devices |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2006062645A2 true WO2006062645A2 (fr) | 2006-06-15 |
WO2006062645A3 WO2006062645A3 (fr) | 2006-08-24 |
Family
ID=36578362
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/040223 WO2006062645A2 (fr) | 2004-12-08 | 2005-11-04 | Schema de regulation de puissance pour une sortie de haute tension dans des dispositifs a circuit integre |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2006062645A2 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7808300B2 (en) | 2004-12-08 | 2010-10-05 | Atmel Corporation | Power regulation scheme for a high voltage output in integrated circuit devices |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5444412A (en) * | 1991-09-05 | 1995-08-22 | Gemplus Card International | Programming voltage regulation circuit for programmable memories |
US5499183A (en) * | 1993-11-30 | 1996-03-12 | Nec Corporation | Constant voltage generating circuit having step-up circuit |
US6297687B1 (en) * | 1998-08-11 | 2001-10-02 | Oki Electric Industry Co., Ltd. | Drive control circuit of charged pump circuit |
US6518828B2 (en) * | 2000-12-18 | 2003-02-11 | Hynix Semiconductor Inc. | Pumping voltage regulation circuit |
US20040239408A1 (en) * | 2003-05-15 | 2004-12-02 | Yin-Chang Chen | Regulated charge pump |
-
2005
- 2005-11-04 WO PCT/US2005/040223 patent/WO2006062645A2/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5444412A (en) * | 1991-09-05 | 1995-08-22 | Gemplus Card International | Programming voltage regulation circuit for programmable memories |
US5499183A (en) * | 1993-11-30 | 1996-03-12 | Nec Corporation | Constant voltage generating circuit having step-up circuit |
US6297687B1 (en) * | 1998-08-11 | 2001-10-02 | Oki Electric Industry Co., Ltd. | Drive control circuit of charged pump circuit |
US6518828B2 (en) * | 2000-12-18 | 2003-02-11 | Hynix Semiconductor Inc. | Pumping voltage regulation circuit |
US20040239408A1 (en) * | 2003-05-15 | 2004-12-02 | Yin-Chang Chen | Regulated charge pump |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7808300B2 (en) | 2004-12-08 | 2010-10-05 | Atmel Corporation | Power regulation scheme for a high voltage output in integrated circuit devices |
Also Published As
Publication number | Publication date |
---|---|
WO2006062645A3 (fr) | 2006-08-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6226224B1 (en) | Semiconductor integrated circuit device and storage device | |
US6967524B2 (en) | High voltage generation and regulation system for digital multilevel nonvolatile memory | |
US6518828B2 (en) | Pumping voltage regulation circuit | |
KR100560822B1 (ko) | 리플-프리 내부 전압을 발생하는 반도체 장치 | |
US20120139620A1 (en) | Supply regulated charge pump system | |
US7042788B2 (en) | Power supply circuit and semiconductor storage device with the power supply circuit | |
KR20010077519A (ko) | 반도체 메모리 장치의 전압 레귤레이터 회로 | |
JP2007036731A (ja) | 半導体装置 | |
JPH09288523A (ja) | 内部電源電圧発生回路、内部電圧発生回路および半導体装置 | |
JP2002343082A (ja) | 半導体メモリ装置のネガティブ電圧発生器 | |
US6717880B2 (en) | Current reducing device in sense amplifier over driver scheme of semiconductor memory chips and its method | |
US7808300B2 (en) | Power regulation scheme for a high voltage output in integrated circuit devices | |
US7427890B2 (en) | Charge pump regulator with multiple control options | |
CN102097131A (zh) | 电压生成电路 | |
KR100904423B1 (ko) | 반도체 메모리 소자 | |
US20160202713A1 (en) | Circuit driving method and device | |
US20110128070A1 (en) | Charge pump stage, method for controlling a charge pump stage and memory having a charge pump stage | |
WO2005001938A1 (fr) | Circuit integre a semiconducteurs | |
KR100264206B1 (ko) | 내부전압 발생장치 | |
WO2006062645A2 (fr) | Schema de regulation de puissance pour une sortie de haute tension dans des dispositifs a circuit integre | |
KR100889312B1 (ko) | 반도체 소자의 문턱전압 검출부 및 검출방법, 이를 이용한내부전압 생성회로 | |
JP5821497B2 (ja) | レギュレータ用半導体集積回路 | |
US20190050012A1 (en) | Voltage regulator with improved slew rate | |
JP5426357B2 (ja) | 昇圧回路、昇圧方法、半導体装置 | |
JP2021047674A (ja) | ボルテージレギュレーター |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KN KP KR KZ LC LK LR LS LT LU LV LY MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU LV MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
NENP | Non-entry into the national phase in: |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 05825708 Country of ref document: EP Kind code of ref document: A2 |