WO2006062300A1 - Diode electroluminescente a base de silicium - Google Patents

Diode electroluminescente a base de silicium Download PDF

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Publication number
WO2006062300A1
WO2006062300A1 PCT/KR2005/003847 KR2005003847W WO2006062300A1 WO 2006062300 A1 WO2006062300 A1 WO 2006062300A1 KR 2005003847 W KR2005003847 W KR 2005003847W WO 2006062300 A1 WO2006062300 A1 WO 2006062300A1
Authority
WO
WIPO (PCT)
Prior art keywords
led
layer
type
reflective
silicon
Prior art date
Application number
PCT/KR2005/003847
Other languages
English (en)
Inventor
Tae-Youb Kim
Nae-Man Park
Kyung-Hyun Kim
Gun-Yong Sung
Original Assignee
Electronics And Telecommunications Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050037623A external-priority patent/KR100590775B1/ko
Application filed by Electronics And Telecommunications Research Institute filed Critical Electronics And Telecommunications Research Institute
Priority to JP2007545359A priority Critical patent/JP4612053B2/ja
Priority to EP05820850A priority patent/EP1820222A1/fr
Priority to US11/720,987 priority patent/US7671377B2/en
Publication of WO2006062300A1 publication Critical patent/WO2006062300A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Definitions

  • the present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a silicon-based light emitting diode (LED) including a distributed Bragg reflector (DBR).
  • LED silicon-based light emitting diode
  • DBR distributed Bragg reflector
  • a DBR with a high reflectance is used in various photoelectronic devices designed for light-emission, photo detection, light modulation, and other functions.
  • a DBR is a multi-layer mirror composed of alternating layers of two materials having different refractive indices, and reflects light using the difference between the refractive indices of the layers. Disclosure of Invention
  • the present invention provides a silicon-based LED designed to achieve high emission efficiency and narrow emission spectrum using an n-type doping layer and a distributed Bragg reflector (DBR) without the need to inject a doping material directly into the DBR.
  • DBR distributed Bragg reflector
  • LED including a substrate having a p-type mesa substrate structure.
  • An active layer is formed on the substrate and has a first surface and a second surface opposite the first surface.
  • a first reflective layer faces the first surface of the active layer while a second reflective layer faces the second surface of the active layer.
  • the second reflective layer is located on either side of the p-type substrate structure.
  • An n-type doping layer is sandwiched between the active layer and the first reflective layer.
  • a first electrode is electrically connected to the n-type doping layer while a second electrode is electrically connected to the p-type substrate structure.
  • the p-type substrate structure penetrates the second reflective layer and contacts the second surface of the active layer.
  • the first electrode may surround the first reflective layer, and the p-type substrate structure may be located below the portion of the first reflective layer surrounded by the first electrode.
  • the first electrode may have a top of ring shape or polygonal shape. A light-emitting region is confined within the portion of the first reflective layer surrounded by the first electrode.
  • the first and second reflective layers may each include a Distributed Bragg
  • DBR Downlink Reflector
  • the silicon-based LED uses only the n-type doping layer to form a reflective layer on both surfaces of the active layer, thereby offering high emission efficiency, narrow emission spectrum, and improved electroluminescence characteristics.
  • FIG. 1 is a cross-sectional view of a main portion of a silicon-based light emitting diode (LED) according to a preferred embodiment of the present invention
  • FIG. 2 is a plan view of a portion of FIG. 1;
  • FIG. 3 is a plan view of a main portion of a silicon-based LED according to another preferred embodiment of the present invention.
  • a silicon-based light emitting diode includes a substrate 100, for example, p-type silicon substrate, and an active layer 104 that is formed on the substrate 100 and has a first surface 104a and a second surface 104b opposite the first surface 104a.
  • the substrate 100 has a p-type mesa structure 108.
  • the active layer 104 is formed of crystalline or amorphous silicon nano-size dots, and may have a thickness of 10 nm to 100 ⁇ m.
  • a first reflective layer 110 faces the first surface 104a of the active layer 104, while a second reflective layer 120 faces the second surface 104b.
  • the second reflective layer 120 is located on either side of the p-type substrate structure 108.
  • the p-type substrate structure 108 penetrates the second reflective layer 120 and has a top surface contacting the second surface 104b of the active layer 104.
  • a first electrode 122 is shaped to completely surround the first reflective layer 110. While FIG. 2 shows that the first electrode 122 has a top of circular shape, it may have a ring shape of circular or elliptical, or have a polygonal shape. FIG. 3 shows a rectangular first electrode 122'. Like reference numerals in FIGS. 2 and 3 denote like elements, and thus their description will be omitted to avoid redundancy. Unless otherwise described, the description of the elements shown in FIG. 2 will apply to elements shown in FIG. 3.
  • the p-type substrate structure 108 is located below a portion of the first reflective layer 110 surrounded by the first electrode 122.
  • the p-type substrate structure 108 may have a width W of 0.01 to 10 mm.
  • the portion of the first reflective layer 110 surrounded by the first electrode 122 corresponds to a light-emitting region 200.
  • a portion of the light-emitting region 200 in proximity to the first electrode 122 may be a highly efficient light-emitting region 210.
  • the highly efficient light-emitting region 210 may have a width of 10 nm to 1 ⁇ m.
  • An n-type doping layer 106 sandwiched between the active layer 104 and the first reflective layer 110 is made of an n-type compound semiconductor such as ZnO, InSnO, NiO, SiC, or SnO .
  • a reference numeral 130 in FIG. 1 denotes an insulating layer.
  • the first electrode 122 is electrically connected to the n-type doping layer 106, while a second electrode 124 is electrically connected to the p-type substrate structure 108.
  • the first and second electrodes 122 and 124 may be made of metal and have a thickness of 100 ⁇ m to 5 mm.
  • the first and second reflective layers 110 and 120 each consist of a distributed Bragg reflector (DBR) composed of a sequence of alternating silicon-containing insulating layers having different compositions.
  • the refractive index difference between the alternating insulating layers may be 0.1 to 0.5.
  • the DBR is formed from a repeated stack of alternating layers of SiO and SiN.
  • the DBR may include 2 to 20 pairs of alternating layers of SiO and SiN.
  • the first electrode 122 surrounding the first reflective layer 110 acts to transport electrons into the n-type doping layer 106. Furthermore, holes injected through the second electrode 124 are moved into the p-type substrate structure 108 through the p- type substrate 100.
  • electrons injected through the first electrode 122 pass through the first reflective layer 110 to reach the n-type doping layer 106, and are stably injected into the first surface 104a of the active layer 104 through the n-type doping layer 106.
  • Holes injected through the second electrode 124 reach the p-type substrate 100 and the p-type substrate structure 108, and are then injected into the second surface 104b of the active layer 104.
  • the active layer 104 then emits light using silicon nano-size dots.
  • the light confined between the first and second reflective layers 110 and 120 oscillates so as to selectively amplify and emit a narrow spectrum.
  • the light-emitting region 200 of the silicon-based LED according to the present invention may be limited to the portion of the first reflective layer 110 enclosed by the first electrode 122 or 122'.
  • the light-emitting region 200 is the entire region of the first reflective layer 110 surrounded by the first electrode 122 or 122' and the highly efficient light-emitting region 210 is located around the outer edge portion of the light-emitting region 200 in proximity to the first electrode 122 or 122'.
  • a silicon-based LED with silicon nano-size dots used as an active layer according to the present invention uses an n-type doping layer and a reflective layer including a DBR that are easy to manufacture, to achieve improved performance.
  • the silicon- based LED offers high emission efficiency, narrow emission spectrum, stable operation characteristics, and improved electroluminescence properties.
  • the silicon-based LED can be widely used in various optical devices for light- emission, photodetection, light modulation, and other functions.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne une diode électroluminescente (LED) à base de silicium, à haut rendement, comprenant un réflecteur Bragg réparti (DBR), une couche de dopage de type n, et une structure de substrat de type p. Le LED à base de silicium comprend : un substrat ayant une mesa structure de substrat de type p ; une couche active formée sur le substrat et présentant une première surface et une seconde surface, opposée à la première surface ; une première couche réflectrice dirigée vers la première surface de la couche active ; une seconde couche réflectrice disposée sur un côté de la structure de substrat de type p et orientée du côté de la seconde surface de la couche active ; une couche de dopage de type n, prise en sandwich entre la couche active et la première couche réflectrice ; une première électrode connectée électriquement à la couche de dopage de type n ; et une seconde électrode connectée électriquement à la structure de substrat de type p.
PCT/KR2005/003847 2004-12-08 2005-11-14 Diode electroluminescente a base de silicium WO2006062300A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007545359A JP4612053B2 (ja) 2004-12-08 2005-11-14 シリコンベースの発光ダイオード
EP05820850A EP1820222A1 (fr) 2004-12-08 2005-11-14 Diode electroluminescente a base de silicium
US11/720,987 US7671377B2 (en) 2004-12-08 2005-11-14 Silicon based light emitting diode

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20040102956 2004-12-08
KR10-2004-0102956 2004-12-08
KR1020050037623A KR100590775B1 (ko) 2004-12-08 2005-05-04 실리콘 발광 소자
KR10-2005-0037623 2005-05-04

Publications (1)

Publication Number Publication Date
WO2006062300A1 true WO2006062300A1 (fr) 2006-06-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2005/003847 WO2006062300A1 (fr) 2004-12-08 2005-11-14 Diode electroluminescente a base de silicium

Country Status (2)

Country Link
EP (1) EP1820222A1 (fr)
WO (1) WO2006062300A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008135013A2 (fr) * 2007-05-04 2008-11-13 Osram Opto Semiconductors Gmbh Puce semi-conductrice et procédé de fabrication d'une puce semi-conductrice
CN101981715A (zh) * 2008-07-21 2011-02-23 Lg伊诺特有限公司 发光二极管及其制造方法和发光器件及其制造方法
EP2372791A3 (fr) * 2010-03-10 2012-07-18 LG Innotek Co., Ltd. Diode électroluminescente
EP2498304A2 (fr) * 2009-11-06 2012-09-12 Semileds Optoelectronics Co., Ltd. Diode électroluminescente verticale munie d'une électrode réinstallée vers l'extérieur

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533031A (en) * 1978-08-30 1980-03-08 Hitachi Ltd Light-detecting semiconductor device
US5491350A (en) * 1993-06-30 1996-02-13 Hitachi Cable Ltd. Light emitting diode and process for fabricating the same
JPH11261157A (ja) * 1998-03-16 1999-09-24 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子及びその作製方法
JP2000031589A (ja) * 1998-07-08 2000-01-28 Oki Electric Ind Co Ltd 半導体発光装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5533031A (en) * 1978-08-30 1980-03-08 Hitachi Ltd Light-detecting semiconductor device
US5491350A (en) * 1993-06-30 1996-02-13 Hitachi Cable Ltd. Light emitting diode and process for fabricating the same
JPH11261157A (ja) * 1998-03-16 1999-09-24 Furukawa Electric Co Ltd:The 面発光型半導体レーザ素子及びその作製方法
JP2000031589A (ja) * 1998-07-08 2000-01-28 Oki Electric Ind Co Ltd 半導体発光装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008135013A2 (fr) * 2007-05-04 2008-11-13 Osram Opto Semiconductors Gmbh Puce semi-conductrice et procédé de fabrication d'une puce semi-conductrice
WO2008135013A3 (fr) * 2007-05-04 2009-02-19 Osram Opto Semiconductors Gmbh Puce semi-conductrice et procédé de fabrication d'une puce semi-conductrice
US8526476B2 (en) 2007-05-04 2013-09-03 Osram Opto Semiconductors Gmbh Semiconductor chip and method for manufacturing a semiconductor chip
CN101981715A (zh) * 2008-07-21 2011-02-23 Lg伊诺特有限公司 发光二极管及其制造方法和发光器件及其制造方法
US8823028B2 (en) 2008-07-21 2014-09-02 Lg Innotek Co., Ltd. Light emitting diode and method of manufacturing the same, and light emitting device and method of manufacturing the light emitting device
US9680064B2 (en) 2008-07-21 2017-06-13 Lg Innotek Co., Ltd. Light emitting diode and method of manufacturing the same, and light emitting device and method of manufacturing the light emitting device
EP2498304A2 (fr) * 2009-11-06 2012-09-12 Semileds Optoelectronics Co., Ltd. Diode électroluminescente verticale munie d'une électrode réinstallée vers l'extérieur
EP2498304A4 (fr) * 2009-11-06 2014-03-05 Semileds Optoelectronics Co Diode électroluminescente verticale munie d'une électrode réinstallée vers l'extérieur
EP2372791A3 (fr) * 2010-03-10 2012-07-18 LG Innotek Co., Ltd. Diode électroluminescente
US8653547B2 (en) 2010-03-10 2014-02-18 Lg Innotek Co., Ltd Light emitting device and light emitting device package
US9455377B2 (en) 2010-03-10 2016-09-27 Lg Innotek Co., Ltd. Light emitting device
US9899567B2 (en) 2010-03-10 2018-02-20 Lg Innotek Co., Ltd. Light emitting device

Also Published As

Publication number Publication date
EP1820222A1 (fr) 2007-08-22

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