WO2006058473A1 - Diode luminescente a haut rendement lumineux sur 360 degres (luminescence omnidirectionnelle) - Google Patents

Diode luminescente a haut rendement lumineux sur 360 degres (luminescence omnidirectionnelle) Download PDF

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Publication number
WO2006058473A1
WO2006058473A1 PCT/CN2005/001184 CN2005001184W WO2006058473A1 WO 2006058473 A1 WO2006058473 A1 WO 2006058473A1 CN 2005001184 W CN2005001184 W CN 2005001184W WO 2006058473 A1 WO2006058473 A1 WO 2006058473A1
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WO
WIPO (PCT)
Prior art keywords
light
emitting
emitting diode
degree
transparent
Prior art date
Application number
PCT/CN2005/001184
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English (en)
Chinese (zh)
Inventor
Jianwei Chen
Original Assignee
Jianwei Chen
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Filing date
Publication date
Application filed by Jianwei Chen filed Critical Jianwei Chen
Publication of WO2006058473A1 publication Critical patent/WO2006058473A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H01L2224/48249—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item the bond pad protruding from the surface of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Definitions

  • the invention relates to a high efficacy photoluminescent diode in an optoelectronic component, in particular to a 36 degree (bulk illuminating) high efficacy photoluminescent diode.
  • the basic structure of the existing photoluminescent diode is exemplified by a white light emitting diode, which is basically formed in the reflector (4) of the LED holder (2), and the intrinsic semiconductor light emitting chip (3) is in the reflector (4).
  • the photoluminescent phosphor (5) is spotted, and then the transparent epoxy (1) is potted to form a white light emitting diode.
  • blue light + yellow light white light.
  • the existing white light emitting diode has an optical path: a voltage is applied to the pin of the light emitting diode holder (2), and the semiconductor light emitting chip (3) emits light (common blue light), and the short wavelength light excites the photoluminescent phosphor ( 5) Luminescence (commonly yellow), this process is also called photoluminescence, and the resulting white light is composite light.
  • the white light is transmitted in the transparent epoxy (1) (medium nl), and the convex lens formed by the reflective cup (4) and the transparent epoxy glue (1) is concentrated into a directional white light having a " ⁇ solid angle". (also known as power angle). (see picture 1)
  • the existing white light-emitting diodes have the following problems: First, 360-degree body illumination cannot be realized; Second. After reflection (4) reflection and multiple reflections Light, the light energy loss is large; third. When the light is transmitted on the transparent epoxy medium nl and the medium n2 (air) interface, since the "refractive index difference" of the medium nl and the medium n2 is large, the self-light The light output efficiency is low; fourth. The reflected light generated by the interface between the medium nl and the medium n2 is also lost.
  • the present invention aims to provide a 360-degree (bulk-emitting) high-efficiency photoluminescence diode, which solves the problem of low-efficiency unidirectional illumination existing in the existing photoluminescence diode package technology and package structure.
  • Light-emitting diodes, especially S-light-emitting diodes, have a broader application prospect in the field of illumination.
  • the basic principle on which the present invention is based The light-emitting diode chip itself has a light-emitting characteristic of body light emission or approximate light emission; Secondly, according to the principle of photoluminescence; Third, according to the principle of color mixing; Fourth, according to geometric optical refraction and The law of reflection.
  • the invention invents a "360-degree (bulk-emitting) high-efficiency photoluminescent diode", and its basic structure is shown in Fig. 2.
  • the invention consists of a light-emitting diode holder without a reflector, a semiconductor light-emitting chip, a wire, a transparent epoxy glue, a photoluminescent phosphor, and a transparent adhesive.
  • the transparent protective material can be sealed on the outer surface formed by the transparent adhesive.
  • a semiconductor light-emitting chip is inherently mounted on the light-emitting diode holder, and the two are connected by a wire completion circuit. It is then potted with a clear epoxy glue to form a "light emitting diode". Transparent adhesive and photo-induced The light phosphor powder is mixed and stirred in a certain ratio and degassed to prepare a "phosphor glue”. Then immerse the "light-emitting diode” in the “phosphor glue” and completely coat (attach) the surface of the "light-emitting diode” transparent epoxy glue with "phosphor glue”. After curing, a layer of "film body” composed of "clear adhesive and photoluminescent phosphor" is formed on the surface of the transparent epoxy.
  • a protective layer which may also be a protective body of a shaped body.
  • the protective layer has high light transmittance, high hardness mechanical strength, high abrasion resistance, and good chemical stability. (See Figure 6)
  • the voltage and current are applied to the two ends of the LED bracket to make the semiconductor light emitting chip emit light, and the semiconductor light emitting chip itself has the characteristics of body light emission or near body light emission, and the "film body” is completely coated outside the transparent epoxy glue. On the surface.
  • the principle of photoluminescence the light emitted by the photoluminescent phosphor excited by the semiconductor light-emitting chip is distributed on the "film body", which is also a 360-degree body light. Therefore, the combined light after spatial mixing achieves 360-degree body illumination. (See Figure 2)
  • the medium n3 is formed, and the transparent adhesive is selected as the "silicone resin adhesive", for example, silicone resin.
  • the refractive index (n3) is 1.38 ⁇ 1.39, and the refractive index (nl) of the transparent epoxy adhesive is 1.45, and the "refractive index difference" value of the dielectric nl and ⁇ 3 is small, so that the light-emitting efficiency of the semiconductor light-emitting chip is improved, correspondingly The light energy of the excited photoluminescent phosphor is increased, thereby achieving the purpose of high light efficiency.
  • the 360-degree (body-illuminated) high-efficiency photoluminescent diode is suitable for emitting composite light by the violet and blue-light-excited photoluminescent phosphors, and the wavelength of the light source of the excitation light source is 260 ⁇ ! ⁇ 480nm.
  • FIG. 1 is a schematic view of a conventional photoluminescent diode
  • Figure 2 is a schematic view of the embodiment
  • FIG. 3 is a schematic view of the first soaking of the second method of the embodiment
  • Figure 5 is a schematic view of the second soaking of the second method of the present embodiment
  • Figure 6 is a schematic view showing the molding method of the transparent protective material.
  • the present embodiment is composed of a transparent epoxy glue 1, a semiconductor light-emitting chip 3, a photoluminescent phosphor 5, a wire 6, a transparent protective material 7, a transparent adhesive 8, and a light-emitting diode holder 12.
  • the light-emitting diode 9 composed of a transparent epoxy glue 1, a semiconductor light-emitting chip 3, a wire 6, and a light-emitting diode holder 12 is a conventional manufacturing process.
  • the key implementation method is "clear adhesive 8 and photoluminescent phosphor 5" coated and cured on the surface of transparent epoxy 1 into a film body. 11 ".
  • the light-emitting diode 9 after the "glazed glass treatment” is compared with the luminous flux value before the treatment, and it is found that the luminous flux of the processed light-emitting diode 9 is decreased by 1.58%, but the light-emitting diode 9 after the "glazing treatment” is applied once (for example) image 3 ).
  • the coating layer is completely coated on the outer surface of the transparent epoxy resin 1, and after curing, the resulting "film body 11" has a good film forming effect.
  • the transparent adhesive 8 is made of silicone adhesive
  • the light-emitting diode 9 does not need to be "glazed", but the method of applying twice (Fig. 3, Fig. 4, Fig. 5) is: Firstly, the light-emitting diode 9 is completely immersed in a low-concentration "phosphor glue" 10 After curing, it is formed (Fig. 4).
  • the transparent adhesive 8 is made of a silicone resin adhesive
  • Method 3 Transparent adhesive 8 Select photosensitive optical adhesive.
  • the photosensitive optical adhesive has the characteristics of high strength, small shrinkage and good chemical stability of the epoxy resin, and has the characteristics of small viscosity of the unsaturated polyester resin, good wettability, and fast curing under light irradiation.
  • the "film body” 11 formed after one or two coatings is easier to control and does not require "glossy treatment" of the surface of the transparent epoxy. Also by the coating method, the obtained “film body” 11 is uniform, and the film formability is also preferable, but the cost is high. From the above three methods of forming the "film body U", it is known that the process for realizing the "film body 11" and the materials selected are various and various.
  • the material used for the transparent protective material 7 has a wide range of choices, and can be made of a transparent epoxy glue or a silicone resin adhesive, etc., and it can be formed in various ways, and a protective film can be formed.
  • a protective body is formed (see Figure 6). If the transparent adhesive 8 used for the 360-degree (bulk-emitting) high-efficiency photoluminescence diode is selected, the hardness, mechanical strength, wear resistance, and chemical stability are sufficient, and the transparent protective material 7 may not be used.
  • the present invention is compared with existing photoluminescent diodes
  • 360 degree (body-emitting) high-efficiency photoluminescent diode ⁇ 48 lumens / watt
  • Note: 1 we use wavelength 460-465nm, Languang ITO chip, light intensity is 90-100mcd, made ⁇ 5mm, 360 degrees (body Luminescence) High efficacy photoluminescent diode (white light), resulting in a luminous efficacy of 77 lumens per watt.
  • optical parameter data provided by the present invention are all produced by the Institute of Optoelectronics, China Metrology Institute: JF-II LED photoelectric parameter tester and ⁇ 90mm integrating sphere.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L’invention concerne une diode luminescente à haut rendement lumineux sur 360 degrés (luminescence omnidirectionnelle) permettant de remédier au problème du faible rendement lumineux et de la luminescence unidirectionnelle des techniques et des structures d’encapsulation existantes des diodes photoluminescentes, de façon à élargir le champ d’application de l’éclairage par des diodes luminescentes, notamment par des diodes émettant de la lumière blanche. La diode luminescente selon l’invention comprend un châssis de diode luminescente sans capsule réfléchissant la lumière, une puce de semiconducteur émettant de la lumière, un conducteur, de la résine époxy transparente, un phosphore photoluminescent et de l’adhésif transparent. Si, dans cette structure de base, l’adhésif transparent n’offre pas une dureté, une résistance mécanique, une résistance à l’usure et une stabilité chimique suffisantes, la surface extérieure formée de l’adhésif transparent peut être scellée et recouverte d’une matière protectrice transparente.
PCT/CN2005/001184 2004-12-03 2005-08-03 Diode luminescente a haut rendement lumineux sur 360 degres (luminescence omnidirectionnelle) WO2006058473A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200410052487.4 2004-12-03
CN2004100524874A CN1665038A (zh) 2004-12-03 2004-12-03 360度(体发光)高光效光致发光二极管

Publications (1)

Publication Number Publication Date
WO2006058473A1 true WO2006058473A1 (fr) 2006-06-08

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PCT/CN2005/001184 WO2006058473A1 (fr) 2004-12-03 2005-08-03 Diode luminescente a haut rendement lumineux sur 360 degres (luminescence omnidirectionnelle)

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CN (1) CN1665038A (fr)
WO (1) WO2006058473A1 (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007127029A2 (fr) * 2006-04-24 2007-11-08 Cree, Inc. Del blanche montée en surface vue de côté
WO2008045927A2 (fr) * 2006-10-12 2008-04-17 Cree Led Lighting Solutions, Inc. Dispositif d'éclairage et son procédé de fabrication
TWI363847B (en) 2008-03-28 2012-05-11 Ind Tech Res Inst Light emitting device with positioning function and assembly method thereof
CN101551077B (zh) * 2008-04-03 2011-11-30 财团法人工业技术研究院 发光装置与应用其的背光装置及其组装方法
CN101691912A (zh) * 2009-09-14 2010-04-07 重庆耀辉电工电器有限责任公司 一种立体发光的led光源以及封装方法
CN102664229B (zh) * 2012-06-05 2015-04-08 泉州万明光电有限公司 一种发光二极体光源结构

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962971A (en) * 1997-08-29 1999-10-05 Chen; Hsing LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights
JP2000036625A (ja) * 1999-07-19 2000-02-02 Sanken Electric Co Ltd 半導体発光装置
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
JP2002232012A (ja) * 2001-02-02 2002-08-16 Rohm Co Ltd 半導体発光素子
US6472765B1 (en) * 1998-06-26 2002-10-29 Sanken Electric Co., Ltd. Plastic encapsulated semiconductor light emitting device with a cover of fluorescent particles

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5962971A (en) * 1997-08-29 1999-10-05 Chen; Hsing LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
US6472765B1 (en) * 1998-06-26 2002-10-29 Sanken Electric Co., Ltd. Plastic encapsulated semiconductor light emitting device with a cover of fluorescent particles
JP2000036625A (ja) * 1999-07-19 2000-02-02 Sanken Electric Co Ltd 半導体発光装置
JP2002232012A (ja) * 2001-02-02 2002-08-16 Rohm Co Ltd 半導体発光素子

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