WO2006053518A1 - Anordnung mit solarzelle und integrierter bypass-diode - Google Patents
Anordnung mit solarzelle und integrierter bypass-diode Download PDFInfo
- Publication number
- WO2006053518A1 WO2006053518A1 PCT/DE2005/001985 DE2005001985W WO2006053518A1 WO 2006053518 A1 WO2006053518 A1 WO 2006053518A1 DE 2005001985 W DE2005001985 W DE 2005001985W WO 2006053518 A1 WO2006053518 A1 WO 2006053518A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- layer sequence
- doped
- solar cell
- sequence
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 description 25
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002161 passivation Methods 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 241001465754 Metazoa Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000865 membrane-inlet mass spectrometry Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0475—PV cell arrays made by cells in a planar, e.g. repetitive, configuration on a single semiconductor substrate; PV cell microarrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
- H01L27/1421—Energy conversion devices comprising bypass diodes integrated or directly associated with the device, e.g. bypass diode integrated or formed in or on the same substrate as the solar cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Definitions
- the present invention relates to an arrangement with at least one solar cell, which is formed by a first layer sequence over a substrate, and at least one bypass diode, which is connected to the solar cell, in particular in a monolithic series-connected solar module.
- Solar cells are often used in solar modules in which they are arranged in rows and columns. By series connection of the solar cells in the solar module, a sufficiently high electrical voltage is generated for the consumer. In a Sectionabschattung a solar module, however, there is the danger of destruction of the shadowed cells, which operate in this case as electrical loads due to the series connection. The individual solar cells in the solar module should therefore be protected against overvoltages in the reverse direction by bypass diodes.
- MIM Monolithically Interconnected Modules
- Monolithic series-connected solar modules have a larger number of solar cells, which on a common, semi-insulating substrate are applied as Schicht ⁇ sequence.
- the individual solar cells are separated from each other by trenches in the layer sequence and interconnected via integrated metallic contacts.
- An example of a MIM solar module and a method for its production can be found, for example, in the publication by S. van Riesen et al.
- Receiving area are accepted to integrate the bypass diodes between the solar cells in the solar module. Furthermore, the performance of the diodes is limited in such an arrangement.
- bypass diodes are either on or next to the photovoltaically active layers.
- the object of the present invention is to provide an arrangement of a solar cell with a Specify bypass diode, which allows a higher ho ⁇ ability of the bypass diode and leads to a lower loss of active receiving surface during integration in a solar module.
- the present arrangement with a solar cell, which is formed in a known manner by a first layer sequence differently doped layers over a substrate, and a bypass diode, which connects to the solar cell, is characterized in that the bypass diode by a second layer sequence is formed, which is arranged between the substrate and the first layer sequence.
- the first layer sequence represents the photovoltaically active layer sequence of the solar cell.
- the bypass diode is thus integrated into the structure of the solar cell comprising the substrate and the first layer sequence.
- the bypass diode consists of a layer sequence of an n-conducting and a p-conducting layer, which are formed voll ⁇ surface between the photovoltaically active layer sequence of the solar cell and the substrate.
- the bypass diode itself no additional Liehe surface next to the photovoltaically active surface, ie the active receiving surface of the solar cell needed. Only the area necessary for contacting the bypass diode causes a small additional loss of active reception area of less than 5%. Nevertheless, all solar cells in such a solar module, preferably a MIM solar module, are protected by the bypass diodes.
- the full-surface design of the bypass diode also leads to a higher performance of this device.
- a thin, highly doped layer sequence forms a tunnel diode between the photovoltaically active layer sequence of the solar cell and the layer sequence forming the bypass diode.
- the first layer sequence preferably comprises at least one p-type and one n-type layer which form the photovoltaically active area and lie on a highly doped lateral conduction layer (LCL). Furthermore, additional reflection and / or passivation layers can be provided.
- a layer sequence for the formation of a solar cell is known from the prior art, for example the publication by S. van Riesen mentioned in the introduction to the description.
- the present arrangement is part of a monolithic series-connected solar module (MIM), in which several Solar cells with integrated bypass diode are arranged side by side and interconnected in series.
- MIM monolithic series-connected solar module
- the individual layers are preferably first applied over the whole area using an epitaxial process, preferably MOVPE (Metal Organic Vapor Phase Epitaxy), to a common substrate.
- MOVPE Metal Organic Vapor Phase Epitaxy
- the second layer sequence for forming the bypass diodes thereby comes to rest between the first layer sequence for forming the solar cells and the substrate.
- deeper semiconductor layers for electrical contacting are exposed by etching trenches and the individual solar cells of the solar module are insulated from one another by these trenches, which extend into the substrate.
- flanks of the etched trenches are covered by an insulator.
- the series connection of the adjacent solar cells takes place by applying a structured metal layer which electrically connects different semiconductor layers in the trenches and outside the trenches. With this electrical contacting, the bypass diodes are integrated into the interconnection.
- a layer structure is selected in which a highly doped n-conducting transverse conductive layer, a thin layer sequence forming a tunnel diode, a p-doped layer, and on the semi-insulating substrate in the following order a highly doped n-type cross-conduction layer for forming the bypass diode, a thin layer sequence forming another tunnel diode, and a p-doped layer and an n-type layer. doped layer are applied to form the photovoltaically active layer sequence.
- additional reflection and / or passivation layers can also be provided here at a suitable location in the layer structure.
- only n-doped layers must be metallically contacted for the series connection of adjacent solar cells, including the bypass diodes, so that this is possible with a uniform structured metal layer. This reduces the production effort compared to one
- FIG. 1 shows a cross-sectional illustration of a first example of a structure of the present arrangement in a solar module
- Fig. 2 is an equivalent circuit diagram for the illustration of Figure 1;
- FIG. 3 is a modified equivalent circuit diagram for the illustration of Figure 1;
- Fig. 4 in cross-sectional view a second
- Fig. 5 is an equivalent circuit diagram for the illustration of Figure 4.
- FIG. 6 is a modified equivalent circuit diagram for the illustration of FIG. 4.
- FIG. 1 shows an example of a construction of the present arrangement in a monolithically series-connected solar module (MIM).
- MIM monolithically series-connected solar module
- a section of the solar module can be seen in which 3 series-connected solar cells with bypass diodes are at least partially shown.
- the figure shows a cross section through a layer structure and the interconnection of the adjacent solar cells.
- the layer structure consists of the following semiconductor layers:
- a layer sequence 4, 5 of semiconductor layers of opposite doping, which form the bypass diode, is applied to the semi-insulating substrate 6, a GaAs wafer.
- the layer 4 of GaAs with a p-doping of about 2 * 10 18 cm “3 and a thickness of about 50 nm represents the emitter of the bypass diode.
- the n-doped layer 5, also made of GaAs, is composed a 50 nm thick sub-layer with a doping of about 2 * 10 18 cm "3 as the basis of the bypass diode and a 500 nm thick sub-layer with a doping of about 5 * 10 18 cm "3 together, which forms a cross-conducting layer of the bypass diode.
- a further thin semiconductor layer 3 of GaAs is applied to form a tunnel diode.
- the upper layer 1 consists of a 1000 nm thick p-doped GaAs layer with a doping of approximately 2 ⁇ 10 18 cm -3 as an emitter of the solar cell, on which a 20 nm thick passivation layer of AlGaAs is applied as the window layer.
- the n-doped layer 2 consists of three partial layers, of which the uppermost 2000 nm thick partial layer of GaAs with a doping of approximately 5 ⁇ 10 17 cm -3 forms the base of the solar cell.
- a passivation layer made of AlGaAs with a thickness of 50 nm and a doping of approximately 5 ⁇ 10 18 cm -3 .
- the lowermost partial layer of GaAs forms approximately 5 ⁇ 10 18 cm -3 and its high thickness of 2000 nm due to its high doping a highly conductive crossover layer with low layer resistance.
- trenches are embedded in the epitaxially grown layer introduced structure, which extend partly into the substrate.
- the isolation between the individual solar cells of the solar module is achieved by these trenches.
- these trenches serve the electrical contacting of the semiconductor layers located at different depths.
- the S ⁇ flanks of the trenches are in this case first with an insulating layer 7, for example. Of polyimide, covered. The application of this insulator takes place in a known manner by means of suitable photolithographic and / or etching steps in structured form.
- the metal layer 8 which serves an electrical connection for series connection of adjacent solar cells on the one hand and for parallel connection of the respective bypass diode with the solar cell on the other. It consists of common, thin metal contacts for the production of ohmic metal-semiconductor junctions and an overlying, highly conductive 2 ⁇ m thick silver layer.
- the metallization extends as Griffingrid 9 of fine contact fingers over the photovoltaically active surface of the respective solar cell.
- FIG. 2 shows an equivalent circuit diagram for the interconnection of the individual solar cells and bypass diodes shown in FIG.
- the solar cells are re remplisen ⁇ in this equivalent circuit in a known manner by a current source and a parallel diode, wherein parallel to the solar cell, the bypass diode and the tunnel diode are connected. From this equivalent circuit diagram can be seen that at a
- FIG. 3 shows a modified equivalent circuit diagram in which the layer structure of the solar cell and the bypass diode are additionally taken into account.
- the layer structure of the arrangement according to FIG. 1 in a solar module differs from known solar modules without integrated bypass diode due to the additional layer sequence of the semiconductor layer 4, 5 forming the bypass diode and the layer 3 forming the tunnel diode and the additional metallic contacting of the semiconductor layer 5, which is part of the bypass diode.
- the layer structure shown in FIG. 1 there is a need for semiconductor layers of different doping, ie. H. both n-doped and p-doped semiconductors, kontak ⁇ animals.
- different metal layers are necessary, so that the production cost increases. This additional production effort can be achieved through the
- FIG. 4 shows an example of a modified construction of the arrangement of solar cell
- the epitaxially grown Schicht ⁇ structure consists of the following semiconductor layers:
- a highly n-doped transverse conductive layer 15 (LCL).
- a thin layer sequence 20 is applied to form a tunnel diode.
- the Tunnel diode forming layer sequence 20 is a layer sequence of a p-doped layer 14 and a highly doped n-type cross-conducting layer 13, through whose pn junction the bypass diode is formed.
- a further thin layer sequence 21 forming a tunnel diode, on which a p-doped semiconductor layer 12 is situated as the base of the solar cell.
- the n-doped semiconductor layer 11 forming the emitter of the solar cell follows.
- FIG. 5 shows an equivalent circuit diagram of this layer structure, in which the solar cell, the two tunnel diodes and the bypass diode can be seen.
- FIG. 6 shows a modified equivalent circuit diagram of this layer structure with additional consideration of the layer structure. It can also be seen from these equivalent circuit diagrams that the bypass diode protects the individual solar cells in the event of overvoltage in the reverse direction.
- FIGS. 1 and 4 it is immediately apparent from FIGS. 1 and 4 that the presently selected integration of the bypass diode into the layer structure of the individual solar cells brings with it only a small loss of active receiving surface.
- large-area receivers can be provided in which each individual solar cell is protected by the bypass diodes.
- tunnel diode forming layer sequence 20 tunnel diode forming layer sequence 21 tunnel diode forming layer sequence
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- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Molecular Biology (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2005306196A AU2005306196B2 (en) | 2004-11-16 | 2005-11-03 | Arrangement comprising a solar cell and an integrated bypass diode |
EP05815533A EP1815521A1 (de) | 2004-11-16 | 2005-11-03 | Anordnung mit solarzelle und integrierter bypass-diode |
US11/667,755 US7932462B2 (en) | 2004-11-16 | 2005-11-03 | Arrangement comprising a solar cell and an integrated bypass diode |
IL183206A IL183206A (en) | 2004-11-16 | 2007-05-15 | Arrangement comprising a solar cell and an integrated bypass diode |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004055225.8A DE102004055225B4 (de) | 2004-11-16 | 2004-11-16 | Anordnung mit Solarzelle und integrierter Bypass-Diode |
DE102004055225.8 | 2004-11-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006053518A1 true WO2006053518A1 (de) | 2006-05-26 |
Family
ID=35686749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2005/001985 WO2006053518A1 (de) | 2004-11-16 | 2005-11-03 | Anordnung mit solarzelle und integrierter bypass-diode |
Country Status (6)
Country | Link |
---|---|
US (1) | US7932462B2 (de) |
EP (1) | EP1815521A1 (de) |
AU (1) | AU2005306196B2 (de) |
DE (1) | DE102004055225B4 (de) |
IL (1) | IL183206A (de) |
WO (1) | WO2006053518A1 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007011403A1 (de) * | 2007-03-08 | 2008-09-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Frontseitig serienverschaltetes Solarmodul |
WO2012168191A1 (de) * | 2011-06-07 | 2012-12-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarmodul mit integrierter verschaltung sowie verfahren zu dessen herstellung |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9141413B1 (en) | 2007-11-01 | 2015-09-22 | Sandia Corporation | Optimized microsystems-enabled photovoltaics |
US9093586B2 (en) | 2007-11-01 | 2015-07-28 | Sandia Corporation | Photovoltaic power generation system free of bypass diodes |
DE102009013276A1 (de) * | 2009-05-12 | 2010-11-25 | Eulektra Gmbh | Restlichtaktivierungsverfahren für Vollausnutzung von Flachdächern für Aufstellung von Photovoltaik Generator Modulen |
US8878048B2 (en) * | 2010-05-17 | 2014-11-04 | The Boeing Company | Solar cell structure including a silicon carrier containing a by-pass diode |
US8134217B2 (en) * | 2010-12-14 | 2012-03-13 | Sunpower Corporation | Bypass diode for a solar cell |
DE102011115659A1 (de) * | 2011-09-28 | 2013-03-28 | Osram Opto Semiconductors Gmbh | Photovoltaischer Halbleiterchip |
DE102011115340A1 (de) | 2011-10-07 | 2013-04-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement im Mehrschichtaufbau und hieraus gebildetes Modul |
KR101563851B1 (ko) | 2012-10-16 | 2015-10-27 | 솔렉셀, 인크. | 광기전 태양 전지 및 모듈의 모놀리식으로 집적된 바이패스 스위치를 위한 방법 및 시스템 |
WO2014071417A2 (en) * | 2012-11-05 | 2014-05-08 | Solexel, Inc. | Systems and methods for monolithically isled solar photovoltaic cells and modules |
DE112013006161A5 (de) | 2012-12-21 | 2015-09-10 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Justagetolerante photovoltaische Zelle |
US9831369B2 (en) | 2013-10-24 | 2017-11-28 | National Technology & Engineering Solutions Of Sandia, Llc | Photovoltaic power generation system with photovoltaic cells as bypass diodes |
DE102015002513A1 (de) | 2015-03-02 | 2016-09-08 | Azur Space Solar Power Gmbh | Solarzellenvorrichtung |
CN105428439B (zh) * | 2015-12-29 | 2017-05-10 | 上海大学 | 硅基sis结构旁路二极管和hit太阳电池的器件集成方法 |
US9954128B2 (en) | 2016-01-12 | 2018-04-24 | The Boeing Company | Structures for increased current generation and collection in solar cells with low absorptance and/or low diffusion length |
US10541345B2 (en) * | 2016-01-12 | 2020-01-21 | The Boeing Company | Structures for increased current generation and collection in solar cells with low absorptance and/or low diffusion length |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5990415A (en) * | 1994-12-08 | 1999-11-23 | Pacific Solar Pty Ltd | Multilayer solar cells with bypass diode protection |
EP1094521A2 (de) * | 1999-10-18 | 2001-04-25 | Sharp Kabushiki Kaisha | Solarzelle mit Umleitungsfunktion und mehrere Übergänge aufweisende Solarzellentyp mit Umleitungsfunktion und Herstellungsverfahren dieser Vorrichtungen |
US6452086B1 (en) * | 1998-10-05 | 2002-09-17 | Astrium Gmbh | Solar cell comprising a bypass diode |
US20020179141A1 (en) * | 1998-05-28 | 2002-12-05 | Frank Ho | Solar cell having an integral monolithically grown bypass |
US20030140962A1 (en) * | 2001-10-24 | 2003-07-31 | Sharps Paul R. | Apparatus and method for integral bypass diode in solar cells |
Family Cites Families (3)
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JPH0964397A (ja) * | 1995-08-29 | 1997-03-07 | Canon Inc | 太陽電池および太陽電池モジュール |
US6452068B1 (en) * | 1998-01-28 | 2002-09-17 | The Rockefeller University | Chemical inducible promoters used to obtain transgenic plants with a silent marker |
JP2002297336A (ja) * | 2001-03-30 | 2002-10-11 | Seiko Instruments Inc | プリンタシステム |
-
2004
- 2004-11-16 DE DE102004055225.8A patent/DE102004055225B4/de not_active Expired - Fee Related
-
2005
- 2005-11-03 EP EP05815533A patent/EP1815521A1/de not_active Withdrawn
- 2005-11-03 US US11/667,755 patent/US7932462B2/en active Active
- 2005-11-03 WO PCT/DE2005/001985 patent/WO2006053518A1/de active Application Filing
- 2005-11-03 AU AU2005306196A patent/AU2005306196B2/en not_active Ceased
-
2007
- 2007-05-15 IL IL183206A patent/IL183206A/en not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5990415A (en) * | 1994-12-08 | 1999-11-23 | Pacific Solar Pty Ltd | Multilayer solar cells with bypass diode protection |
US20020179141A1 (en) * | 1998-05-28 | 2002-12-05 | Frank Ho | Solar cell having an integral monolithically grown bypass |
US6452086B1 (en) * | 1998-10-05 | 2002-09-17 | Astrium Gmbh | Solar cell comprising a bypass diode |
EP1094521A2 (de) * | 1999-10-18 | 2001-04-25 | Sharp Kabushiki Kaisha | Solarzelle mit Umleitungsfunktion und mehrere Übergänge aufweisende Solarzellentyp mit Umleitungsfunktion und Herstellungsverfahren dieser Vorrichtungen |
US20030140962A1 (en) * | 2001-10-24 | 2003-07-31 | Sharps Paul R. | Apparatus and method for integral bypass diode in solar cells |
Non-Patent Citations (1)
Title |
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See also references of EP1815521A1 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007011403A1 (de) * | 2007-03-08 | 2008-09-11 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Frontseitig serienverschaltetes Solarmodul |
WO2008107205A3 (de) * | 2007-03-08 | 2009-02-26 | Fraunhofer Ges Forschung | Frontseitig serienverschaltetes solarmodul |
CN101647125B (zh) * | 2007-03-08 | 2012-08-29 | 弗劳恩霍弗应用技术研究院 | 前侧串联太阳能模块 |
US8704085B2 (en) | 2007-03-08 | 2014-04-22 | Fraunhoer-Gesellschaft zur Forderung der Angewandten Forschung e.v. | Solar module serially connected in the front |
WO2012168191A1 (de) * | 2011-06-07 | 2012-12-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarmodul mit integrierter verschaltung sowie verfahren zu dessen herstellung |
DE102011103539A1 (de) * | 2011-06-07 | 2012-12-13 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solarmodul mit integrierter Verschaltung sowie Verfahren zu dessen Herstellung |
Also Published As
Publication number | Publication date |
---|---|
DE102004055225B4 (de) | 2014-07-31 |
IL183206A (en) | 2012-10-31 |
IL183206A0 (en) | 2007-08-19 |
AU2005306196A1 (en) | 2006-05-26 |
US7932462B2 (en) | 2011-04-26 |
AU2005306196B2 (en) | 2011-01-06 |
DE102004055225A1 (de) | 2006-06-01 |
US20080128014A1 (en) | 2008-06-05 |
EP1815521A1 (de) | 2007-08-08 |
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