WO2006043681A1 - Composition for conductive materials, conductive material, conductive layer, electronic device, and electronic equipment - Google Patents

Composition for conductive materials, conductive material, conductive layer, electronic device, and electronic equipment Download PDF

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Publication number
WO2006043681A1
WO2006043681A1 PCT/JP2005/019440 JP2005019440W WO2006043681A1 WO 2006043681 A1 WO2006043681 A1 WO 2006043681A1 JP 2005019440 W JP2005019440 W JP 2005019440W WO 2006043681 A1 WO2006043681 A1 WO 2006043681A1
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composition
substituent
conductive materials
group
conductive
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PCT/JP2005/019440
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English (en)
French (fr)
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Takashi Shinohara
Yuji Shinohara
Koichi Terao
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Seiko Epson Corporation
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Definitions

  • the present invention relates to a composition for conductivematerials, a conductivematerial, a conductive layer, an electronic device, and electronic equipment, and more specifically to a composition for conductive materials from which a conductive layer having ahigh carrier transport ability can be made, a conductive material formed of the composition and having a high carrier transport ability, a conductive layer formed using the conductive material as a main material, an electronic device providedwith the conductive layer andhaving high reliability, and electronic equipment provided with the electronic device.
  • Electroluminescent devices using organic materials have been extensively developed in expectation of their use as solid-state luminescent devices or emitting devices for use in inexpensive large full-color displays.
  • such an organic EL device has a structure in which a light emitting layer is provided between a cathode and an anode.
  • a light emitting layer is provided between a cathode and an anode.
  • the injected electrons and holes are recombined in the light emitting layer, which then causes their energy level to return from the conduction band to the valence band. At this time, excitation energy is released as light energy so that the light emitting layer emits light.
  • organic layers having different carrier transport properties from eachother (hereinafter, these layers are collectively referred to as "organic layers") on the electrode.
  • organic layers organic layers having different carrier transport properties from eachother
  • JP-A No. 2000-208254 discloses amethod in which a curing resin is added to an organic material constituting the lower organic layer to cure the organic material together with the curing resin.
  • the present invention is directed to a composition for conductivematerials, which comprises a compound represented by the following general formula (Al) :
  • R may be the same or different and each independently represents a hydrogen atom, a methyl group or an ethyl group
  • Y represents a group containing at least one substituted or unsubstituted aromatic hydrocarbon ring or substituted or unsubstituted heterocycle
  • X 1 , X 2 , X 3 and X 4 may be the same or different and each independently represents a substituent represented by the following general formula (A2):
  • n 1 is an integer of 3 to 8
  • m 1 is an integer of 0 to 3
  • Z 1 represents a hydrogen atom, a methyl group or an ethyl group.
  • the group Y contains at least one substituted or unsubstituted aromatic hydrocarbon ring.
  • the substituent X 1 and the substituent X 3 are identical with each other.
  • the substituent X 2 and the substituent X 4 are identical with each other.
  • composition described above it is also possible to make variation in intervals between the main skeletons of the compounds smaller in aresultant polymer. This also makes it possible to further improve a hole transport ability of the polymer.
  • the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 are identical with each other.
  • composition described above it is also possible to make variation in intervals between the main skeletons of the compounds smaller in a resultant polymer. This also makes it possible to further improve a hole transport ability of the polymer.
  • each of the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 is bonded to the 3-, 4- or 5-position of the benzene ring. This allows the main skeletons to exist at an appropriate i interval more reliably in a resultant polymer.
  • the group Y consists of carbon atoms and hydrogen atoms.
  • the group Y contains 6 to 30 carbon atoms in total.
  • the group Y contains 1 to 5 aromatic hydrocarbon rings.
  • the group Y is a biphenylene group or a derivative thereof.
  • composition further comprises a vinyl compound served as a cross-linking agent for cross-linking the compounds each represented by the above-mentioned general formula (Al) with each other at any one or more of their respective substituents X.
  • a vinyl compound served as a cross-linking agent for cross-linking the compounds each represented by the above-mentioned general formula (Al) with each other at any one or more of their respective substituents X.
  • the vinyl compound has at least two reactive groups which are which are capable of reacting with the substituents X of the compounds, respectively.
  • Such a vinyl compound exhibits a higher reactivity.
  • the vinyl compound has an adjusting portion positioned between the two reactive groups for adjusting the interval between the reactive groups.
  • the adjusting portion has a straight-chain structure. This makes it possible to improve ahole transport ability i of a conductive material to be formed from the composition.
  • the adjusting portion is comprised of a number of atoms, and in the atoms 15 to 50 atoms form the straight-chain structure.
  • the conductive material can exhibit a higher hole transport ability.
  • the vinyl compound contains as its main ingredient polyethyleneglycol di(meth)a ⁇ rylate represented by the following general formula (El) .
  • n 12 is an integer of 5 to 15, and two A 1 S may be the same or different and each independently represents a hydrogen atom or a methyl group.
  • the conductive material can exhibit a higher hole transport ability.
  • the adjusting portion has a ring structure.
  • the ring structure is an aromatic ring.
  • At least one of the reactive groups is directly bonded to the ring structure.
  • This also makes it possible to further enhance the reactivity between the reactive groups and the substituents X, thereby it enabling to further increase the ratio of the chemical structure in which the substituents X are cross-linked with each other via the vinyl compound in a conductive material i to be formed from the composition.
  • the vinyl compound contains divinylbenzene as its main ingredient.
  • the substituent X 2 and the substituent X 4 are identical with each other. This also makes it possible to properly prevent or i suppress the electron density in a resultant polymer from being biased, and thereby enabling to improve ahole transport ability of the polymer.
  • the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 are identical with each other.
  • This also makes it possible to properly prevent or suppress the electron density in a resultant polymer from being biased, and thereby enabling to further improve ahole transport ability of the polymer.
  • each of the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 is bonded to the 3-, 4- or 5-position of the benzene ring.
  • the group Y consists of carbon atoms and hydrogen atoms.
  • the group Y contains 6 to 30 carbon atoms in total.
  • the group Y contains 1 to 5 aromatic hydrocarbon rings.
  • the group Y is abiphenylene group or a derivative thereof.
  • the group Y j contains at least one substituted orunsubstitutedheterocycle.
  • composition described above it is possible to make variation in intervals between the main skeletons of the compounds small in a resultant polymer, thereby enabling to improve a carrier transport ability of the polymer.
  • composition described above it is also possible to make variation in intervals between the main skeletons of the compounds small in aresultant polymer, thereby enabling to further improve a carrier transport ability of the polymer.
  • the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 are identical with each other. According to the composition described above, it is also possible to make variation in intervals between the main skeletons of the compounds small in a resultant polymer, thereby enabling to further improve a carrier transport ability of the polymer.
  • each of the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 is bonded to the 3-, 4- or 5-position of the benzene ring.
  • the heterocycle contains at least one heteroatom selected from the group comprising nitrogen, oxygen, sulfur, selenium and tellurium.
  • the energy level of the valence and conductionbands or the size of the band gap of thepolymer easily changes, so that it is possible to change the characteristics of the carrier transport ability of the polymer.
  • the heterocycle may be either of an aromatic heterocycle or a nonaromatic heterocycle, but the aromatic heterocycle is more preferable.
  • aromatic heterocycle it is possible to properly prevent the electron density of the main skeleton with a conjugated chemical structure from being biased, that is, it is possible to properlyprevent the localization of ⁇ electrons. As a result, it is possible to prevent the carrier transport ability of the polymer from being impaired.
  • the group Y contains 1 to 5 heterocycles.
  • the group Y By allowing the group Y to have such a number of heterocyclic rings, it is possible to change the energy level of the valence and conduction bands or the size of the band gap of the polymer sufficiently.
  • the group Y contains at least one substituted or unsubstituted aromatic hydrocarbon ring in addition to the heterocycle.
  • the group Y contains two aromatic hydrocarbon rings respectively bonded to each N in the general formula (Al) directly and at least one heterocycle existing between these aromatic hydrocarbon rings. This makes it possible to prevent reliably the electron density in the polymer from being biased, and thereby enabling each polymer to have an even carrier transport ability.
  • the group Y contains 2 to 75 carbon atoms in total.
  • the solubility of the compound represented by the general formula (Al) in a solvent tends to be increased, so that there is an advantage in that the range of the choices of solvents to be used in preparing the composition for conductive materials becomes wide.
  • the above composition further comprises a vinyl compound served as a cross-linking agent for cross-linking the compounds each represented by the above-mentioned general formula (Al) with each other at any one or more of their respective substituents X in addition to the compound representedby the above-mentioned general formula (Al).
  • a vinyl compound served as a cross-linking agent for cross-linking the compounds each represented by the above-mentioned general formula (Al) with each other at any one or more of their respective substituents X in addition to the compound representedby the above-mentioned general formula (Al).
  • the vinyl compound has at least two reactive groups which are which are capable of reacting with the substituents X.of the compounds, respectively.
  • Such a vinyl compound exhibits a higher reactivity.
  • the vinyl compound has an adjusting portion positioned between the two reactive groups for adjusting the interval between the reactive groups.
  • the adjusting portion has a straight-chain structure.
  • the adjusting portion is comprised of a number of atoms, and in the atoms 15 to 50 atoms form the straight-chain structure.
  • the conductive material can exhibit ahigher carrier transport ability.
  • the vinyl compound contains as its main ingredient polyethyleneglycol di(meth)acrylate represented by the following general formula (El).
  • n 12 is an integer of 5 to 15
  • two A 1 S may be the same or different and each independently represents a hydrogen
  • the conductive material can exhibit a higher carrier transport ability.
  • the adjusting portion contains a ring structure.
  • the ring structure is an aromatic ring.
  • At least one of the reactive groups is directly bonded to the ring structure.
  • the vinyl compound contains divinylbenzene as its main ingredient.
  • This also makes it possible to appropriately prevent or suppress the electron density in a resultant polymer from being biased, and thereby enabling to further improve a carrier transport ability of the polymer.
  • the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 are identical with each other.
  • This also makes it possible to appropriately prevent or suppress the electron density in a resultant polymer from being biased, and thereby enabling to further improve a carrier transport ability of the polymer.
  • each of the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 is bonded to the 3-, 4- or 5-position of the benzene ring.
  • the heterocycle contains at least one heteroatom selected from the group comprising nitrogen, oxygen, sulfur, selenium and tellurium.
  • the energy level of the valence and conductionbands or the size of theband gap of thepolymereasily changes, so that it is possible to change the characteristics of the carrier transport ability of the polymer.
  • the heterocycle may be either of an aromatic heterocycle or a nonaromatic heterocycle, but the aromatic heterocycle is more preferable.
  • the group Y contains 1 to 5 heterocycles.
  • the group Y contains at least one substituted or unsubstituted aromatic hydrocarbon ring in addition to the heterocycle.
  • the group Y contains two aromatic hydrocarbon rings respectively bonded to each N in the general formula (Al) directly and at least one heterocycle existing between these aromatic hydrocarbon rings.
  • the group Y contains 2 to 75 carbon atoms in total.
  • Another aspect of the present invention is directed to i a conductive material obtained by direct polymerization reaction or polymerization reaction via a vinyl compound of substituents of compounds each represented by the following general formula (Al) , wherein each compound being contained in the composition for conductive materials defined in claim 1, and the vinyl compound being served as a cross-linking agent for cross-linking the compounds with each other at any one or more of their respective substituents X 1 , X 2 , X 3 and X 4 :
  • R may be the same or different and each independently represents a hydrogen atom, a methyl group or an ethyl group
  • Y represents a group containing at least one substituted or unsubstituted aromatic hydrocarbon ring or substituted or unsubstituted heterocycle
  • X 1 , X 2 , X 3 and X 4 may be the same or different and each independently represents a substituent represented by the following general formula (A2):
  • n 1 is an integer of 3 to 8
  • m 1 is an integer of 0 to 3
  • Z 1 represents a hydrogen atom, a methyl group or an ethyl group.
  • the compounds are polymerized by light irradiation.
  • both the compound and the vinyl compound are polymerized by light irradiation.
  • a conductive layer mainly comprising the conductive material as described above.
  • This conductive layer can have a high hole transport ability.
  • it is preferred that the conductive layer is used for a hole transport layer.
  • This hole transport layer can also have a high hole transport ability.
  • the average thickness of the hole transport layer is in the range of 10 to 150 nm.
  • the conductive layer of the present invention described above may be used for an electron transport layer.
  • Such an electron transport layer can also have a high electron transport ability.
  • the average thickness of the electron transport layer is in the range of 10 to 150 nm.
  • the conductive layer of the present invention described above may be used for an organic semiconductor layer.
  • Such an organic semiconductor layer can exhibit excellent semiconductor characteristics.
  • it is preferred that the average thickness i of the organic semiconductor layer is in the range of 0.1 to
  • the other aspect of the present invention is directed to an electronic device comprising a laminated bodywhich includes the conductive layer as described above.
  • Such an electronic device can have high reliability.
  • Examples of the electronic device may include a light emitting device and a photoelectric transducer. These light emitting device andphotoelectric transducer can also have high reliability.
  • the light emitting device includes an organic EL device.
  • Such an organic EL device can also have high reliability.
  • examples of the electronic device may also include a switching element.
  • a switching element can also have high reliability.
  • the switching element includes an organic thin film transistor.
  • Such an organic thin film transistor can also have high reliability.
  • Yet other aspect of the present invention is directed to electronic equipment comprising the electronic device described above. Such electronic equipment can also have high reliability.
  • FIG. 1 is a cross-sectional view which shows an example of an organic EL device
  • FIG. 2(a) is a cross-sectional view of an organic TFT
  • FIG. 2(b) is a plan view of the organic TFT
  • FIG. 3(a) to FIG. 3(d) are illustrations which explain the manufacturing method of the organic TFT shown in FIG. 2;
  • FIG. 4(a) to FIG. 4(d) are illustrations which explain the manufacturing method of the organic TFT shown in FIG. 2;
  • FIG. 5 is a perspective view which shows the structure of a personal mobile computer (or a personal notebook computer) to which the electronic equipment according to the present invention is applied;
  • FIG. 6 is a perspective view which shows the structure of a mobile phone (including the personal handyphone system (PHS)) to which the electronic equipment according to the present invention is applied; and
  • PHS personal handyphone system
  • FIG. 7 is a perspective view which shows the structure of a digital still camera to which the electronic equipment according to the present invention is applied.
  • a conductive layer obtained by using a conductive material according to the present invention as its mainmaterial that is, a conductive layer according to the present invention
  • a conductive material according to the present invention contains as its main ingredient a polymer obtained by direct polymerization reaction at substituents X 1 , X 2 , X 3 and X 4 of compounds (which are an arylamine derivative) each represented by the following general formula (Al) (hereinafter, each of these substituents X 1 , X 2 , X 3 and X 4 will be referred to as “substituent X” and all of these substituents will be collectively referred to as “the substituents X” depending on the occasions).
  • R may be the same or different and each independently represents a hydrogen atom, a methyl group, or an ethyl group
  • Y represents a group containing at least one substituted or unsubstituted aromatic hydrocarbon ring or substituted or unsubstituted heterocycle
  • X 1 , X 2 , X 3 and X 4 may be the same or different and each independently represents a substituent represented by the following general formula (A2):
  • n 1 is an integer of 3 to 8
  • m 1 is an integer of
  • aanndd ZZ 11 irepresents a hydrogen atom, a methyl group or an ethyl group.
  • main skeletons which are portions of the compounds other than the substituents X are linked via a chemical structure formed by the direct reaction between the respective substituents X (hereinafter, this chemical structure will be referred to as "first link structure") , and thus a two-dimensional network of the main skeletons becomes easily to be formed.
  • each main skeleton has a conjugated chemical structure, and because of its unique spread of the electron cloud, the main skeletons contribute to smooth transport of carriers (holes or electrons) in the polymer.
  • the main skeletons are linked via the first link structure so that the adjacent main skeletons exist at a predetermined interval therebetween. Therefore, the interaction between the adjacent main skeletons decreases, so that transfer of the carriers between the main skeletons can be carried out smoothly.
  • the main skeletons are linked to form the two-dimensional network as described above. Therefore, even in the case where the network has a portion in which the link structure between the main skeletons is cut off, carriers are smoothly transported through other routes.
  • the network having two-dimensional expansion is likely to be formed as described above, and such a network makes it possible to prevent or suppress polymers frombeing interwoven to each other effectively.
  • interval between the adjacent main skeletons is shortened and thereby the interaction between the adjacent main skeletons becomes too large to decrease the carrier transport ability.
  • carriers can be smoothly transported.
  • the polymer of the present invention which is the main ingredient of the composition for conductive materials of the present invention has the structure in which the main skeletons are linked via the first link structure so that the main skeletons are allowed to exist at a predetermined interval therebetween as well as the characteristic by which the two-dimensional network of the main skeletons are likely to be formed.
  • the conductive material of the present invention can exhibit an especially high carrier transport ability.
  • a conductive layer which is formed using the conductive material of the present invention as its major material can also have a higher carrier transport ability.
  • the structure of the substituent X that is the general formula (A2), is determined in view of these facts. Specifically, it is preferred that the substituent X represented by the general formula (A2) has a straight-chain carbon-carbon link in which n 1 is 3 to 8 and m 1 is 0 to 3, preferably n 1 is 4 to 6 and m 1 is 1 or 2. Further, it is also preferred that the total of n 1 and m 1 is 3 to 11, and more preferably 5 to 8.
  • n 1 and m 1 satisfy the above-mentioned ranges, respectively, or the total of n 1 andm 1 satisfies the above-mentionedrange.
  • n 1 and m 1 satisfy both the above-mentioned relations.
  • the total of n 1 and m 1 in each of the substituent X 1 and the substituent X 3 is substantially the same as with each other or the same as with each other.
  • n 1 and m 1 in each of the substituent X 2 and the substituent X 4 is substantially the same as with each other or the same as with each other. This makes it possible to improve the above-described effect further, thereby enabling to further improve the carrier transport ability of the polymer.
  • the total of n 1 and m 1 in each of the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 is substantially the same as with each other and more preferably the same as with each other. This makes it possible to exhibit the above-described i effect conspicuously. Further, in this case, since the length of each of the substituents X which protrudes from the main skeleton is substantially the same (or exactly the same) with each other, it is possible to decrease a possibility of steric hindrance caused by the substituent X. This makes it possible that polymerization reaction is carried out reliably between the substituents X, that is the polymer is produced reliably. With this result, it is possible to further improve the carrier transport ability of the polymer.
  • each substituent X has a styrene derivative group formed by introducing a substituent Z 1 to a styrene group as its functional group at one end thereof. Therefore, a benzene ring exists in the first link structure.
  • the benzene ring has a.conjugated structure. Therefore, in the case where the benzene ring and the main skeleton having a conjugated chemical structure are too close to each other, that is, for example, in the casewhere the benzene ring is linked to the main skeleton via an ether bond or in the case where the total of n 1 and m 1 is 2, interaction occurs between the adjacent main skeletons through the benzene ring.
  • the linkage between the main skeleton and the benzene ring is formed by n 1 and m 1 the total of which is three or more, that is three or more methylene groups and ether bonds. This makes it possible to maintain the interval between the main skeleton and the benzene ring at a suitable condition. With j this result, it is possible to prevent or suppress interaction from occurring between the adjacent main skeletons appropriately.
  • the substituent Z 1 is a hydrogen atom, a methyl group or an ethyl group, wherein the substituent Z 1 is selected in accordance with the total of n 1 and m 1 , that is the total number of methylene groups.
  • a methyl group or an ethyl group is selected as the substituent Z 1 . Since a methyl group and an ethyl group are an electron-releasing substituent, it is possible to bias electrons to the side of the main skeleton by selecting a methyl group or an ethyl group as the substituent Z 1 . With this result, it is possible to prevent appropriately interaction from occurring between the adjacent main skeletons which are existed through the benzene rings.
  • the two substituents X are substantially identical to each other, and more preferably exactly identical to each other.
  • the two substituents X have substantially the same steric structure, the above described effects can be exhibitedmore conspicuously. As a result, it is possible to prevent or suppress interaction from occurring between the main skeletons appropriately, thereby enabling the carrier transport ability of the polymer to be improved further.
  • the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 are substantially identical with each other andmore preferably exactly identical with each other. This makes it possible to exhibit the above-described effect more conspicuously, thereby enabling the carrier transport ability of the polymer to be improved further.
  • the styrene derivative group has a high reactivity, it is possible to form a network having two-dimensional expansion is likely to be formed relatively easily by polymerization reaction of the two substituents X.
  • the substituent X may be bonded to the 2-, 3-, 4-, 5- or 6-position of the benzene ring, but preferably bonded to the 3-, 4- or 5-position. This makes it possible to exhibit the effect obtained by linking the adjacent main skeletons via the first link structure conspicuously. Namely, it is possible for the adjacent main skeletons to exist at an appropriate interval more reliably.
  • the group Y contains at least one substituted or unsubstituted aromatic hydrocarbon ring or at least one substituted or unsubstituted heterocyclic ring.
  • the group Y has 6 to 30 carbon atoms, more preferably 10 to 25 carbon atoms, and even more preferably 10 to 20 carbon atoms, in total.
  • the number of aromatic hydrocarbon ring is 1 to 5, more preferably 2 to 5, and even more preferably 2 to 3.
  • the hole transport ability of the resultant polymer becomes excellent, and thus the resultant conductive layer can also have an excellent hole transport ability. Further, by selecting a structure which contains at least j one substituted or unsubstituted heterocyclic ring as the group
  • such a heterocyclic ring contains at least one heteroatom selected from among nitrogen, oxygen, sulfur, selenium, and tellurium.
  • the heterocyclic ring may be either an aromatic heterocycle or a nonaromatic heterocycle, but an aromatic heterocycle is preferably used.
  • an aromatic heterocycle it is possible to appropriately prevent the electron density of the main skeletonwith a conjugated chemical structure from being biased, that is, it is possible to appropriately prevent localization of ⁇ electrons. As a result, the carrier transport ability of the polymer is prevented from being impaired.
  • the group Y preferably contains 1 to 5 heterocyclic rings, more preferably 1 to 3 heterocyclic rings. In the case where the group Y contains 2 or more heterocyclic rings, these rings may be the same or different. By allowing the group Y to have such a number of heterocyclic rings, it is possible to sufficiently change the energy level of the valence and conduction bands or the size of the band gap of the polymer. In the case where the group Y contains at least one substituted or unsubstituted heterocyclic ring, the group Y may further contain at least one aromatic hydrocarbon ring in addition to the at least one heterocyclic ring. By selecting a group containing a heterocycle and an aromatic hydrocarbon ring as the group Y, it is possible to impart a desired carrier transport property to the polymer more reliably.
  • the group Y contains two aromatic hydrocarbon rings each bonded to each N in the general formula (Al) directly and at least one heterocyclic ring which exists between these aromatic hydrocarbon rings.
  • the group Y has 2 to 75 carbon atoms, more preferably 2 to 50 carbon atoms, in total. If the group Y has too many carbon atoms in total, the solubility of the compound represented by the general formula (Al) in a solvent tends to be lowered depending on the kind of substituent X, creating a possibility that the range of the choices of solvents to be used in preparing the composition for conductive materials according to the present invention becomes narrow.
  • each Q 1 may be the same or ' different and each independently represent N-T 1 , S, O, Se, or Te (where T 1 represents H, CH 3 , or Ph)
  • each Q 2 may be the same or different and each independently represent S or O
  • each Q 3 may be the same or different and each independently represent N-T 3 , S, O, Se, or Te (where T 3 represents H, CH 3 , C 2 H 5 or Ph) .
  • a polymer obtained by selecting, for example, any one of the chemical formulas (D2), (D16), (D18) and (D20) as the groupY can exhibit ahighhole transport ability as compared to a polymer obtained by selecting the chemical formula (Dl7) and can exhibit an especially high hole transport ability as compared to a polymer obtained by selecting the chemical formula (D8) or (D19).
  • a polymer obtained by selecting any one of the chemical formulas (D8), (D17) and (D19) as the group Y can exhibit a high electron transport ability as compared to a polymer obtained by the chemical formulas (D2) or (D16). Further, the polymer obtained by selecting any one of the chemical formulas (D8) , (D17) and (D19) as the group Y can also exhibit an especially high electron transport ability as compared with a polymer obtained by selecting the chemical formulas (D18) or (D20).
  • the unsubstituted heterocyclic ring and/or the unsubstituted aromatic hydrocarbon ring contained in the group Y may introduce a substituent so long as the planarity of the main skeleton is not greatly affected.
  • a substituent include an alkyl group having a relatively small number of carbon atoms such as a methyl group or an ethyl group or and a halogen group and the like.
  • each of the substituents R is a hydrogen atom, a methyl group, or an ethyl group, and each substituent R is selected in accordance with the number of carbon atoms of the substituent X.
  • a hydrogen atom is selected as the substituent R
  • a methyl group or an ethyl group is selected as the substituent R.
  • the polymer contains a second link structure produced by polymerization reaction(s) of a substituent X and a substituent X via an epoxy-based cross-linking agent in addition to the first link structure produced by the direct polymerization reaction of the substituents X (which are any one of the substituents X 1 , X 2 , X 3 and X 4 ) as described above.
  • a polymer since an interval between the main skeletons is maintained at a more appropriate interval, interaction between the main skeletons can be further decreased. As a i result, the polymer containing the second link structure can exhibit a higher hole transport ability.
  • the substituent X represented by the general formula (A2) has a straight-chain carbon-carbon link in which n 1 is 3 to 8 and m 1 is 0 to 3, preferably n 1 is 4 to 6 and m 1 is 1 or 2. Further, it is also preferred that the total of n 1 and m 1 is 3 to 11, and more preferably 5 to 8.
  • n 1 and m 1 satisfy the above-mentioned ranges, respectively, or the total of n 1 andm 1 satisfies the above-mentioned range.
  • n 1 and m 1 satisfy both the above-mentioned relations.
  • the total of n 1 and m 1 in each of the substituent X 1 and the substituent X 3 is substantially the same as with each other or the same as with each other.
  • n 1 and m 1 in each of the substituent X 2 and the substituent X 4 is substantially the same as with each other or the same as with each other. This also makes it possible to improve the above-described effect further, thereby enabling to further improve the carrier transport ability of the polymer.
  • the total of n 1 and m 1 in each of the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 is substantially the same as with each other or the same as with each other. This makes it possible to exhibit the above-described effect conspicuously. Further, in this case, since the interval between the main skeletons in the polymer can be made larger than a certain distance in spite of the case where the first link structure is formed and/or the second link structure is formed, occurrence of the interaction between the main skeletons can be further prevented. With this result, it is possible to further improve the carrier transport ability of the polymer.
  • the two substituents X are substantially identical to each other, and more preferably exactly identical to each other.
  • the two substituents X have substantially the same steric structure, the above described effects can be exhibitedmore conspicuously. As a result, it is possible to prevent or suppress interaction from occurring between the main skeletons appropriately, thereby enabling the carrier transport ability of the polymer to be improved further.
  • the substituent X 1 , the substituent X 2 , the substituent X 3 and the substituent X 4 are substantially identical with each other andmore preferably exactly identical with each other. This makes it possible to exhibit the above-described effect more conspicuously, thereby enabling the carrier transport ability of the polymer to be improved further.
  • the vinyl compound used in the present invention has at least one reactive group that can react with the substituent X (hereinafter, simply referred to as "reactive group").
  • the reactive group is a reactive portion at which the substituents X of the compounds each represented by the above-mentioned general formula (Al) are cross-linked together via the vinyl compound.
  • a reactive group include a vinyl group, a (meth)acryloyl group and the like. Since these reactive groups exhibit high reactivity, a vinyl compound having such a reactive group also exhibits high reactivity.
  • a vinyl compound having two or more reactive groups in order to further reduce the amount of unreacted substituents X remaining in the resultant polymer, it is preferred to select a vinyl compound having two or more reactive groups. Since use of such a vinyl compound increases reactive portions to be reacted with the substituents X, it is possible to exhibit higher reactivity with the substituent X. As a result, the effects described above can be exhibited more conspicuously. Further, it is also possible to increase the ratio of a chemical structure in which the substituents X are cross-linked with each other via the vinyl compound (that is, the second link structure) with respect to a chemical structure in which the substituents X are directly bonded to each other (that is, the first link structure).
  • the vinyl compound has a smaller molecular weight than an oligomer of the polymer and has a reactive group which is the same kind as the substituent X, the vinyl compound can come close to the substituent X remaining in the oligomer without receiving any influence of steric hindrance and electric interference from the oligomer.
  • a vinyl compound having two reactive groups and an adjusting portion positioned between the two reactive groups for adjusting the interval between the reactive groups. This makes it possible to prevent reliably the interaction between the main skeletons from occurring in the chemical structure in which the substituents X are cross-linked with each other via the vinyl compound (that is, the second link structure). As a result, a conductive material having such achemical structure at high ratios can exhibit a higher hole transport ability.
  • Such an adjusting portion maybe either of a straight chain structure, a branching structure, a ring structure, or a combination of these. Among them, an adjusting portion having a straight chain structure or a ring structure is preferred.
  • the adjusting portion has a straight chain structure
  • a carrier transport ability is improved in a resultant polymer. Such an effect becomes conspicuous when the polymer has a relatively low molecular weight, that is when degree of polymerization is relatively low.
  • the adjusting portion has a ring structure, it is possible to improve planarity of a resultant polymer to be formed from the composition. Therefore, transfer of carriers is effectively carried out between the polymers in a conductive layer to be formed from the composition, and thus a carrier transport ability of the conductive layer becomes superior.
  • the non-conjugated molecular structure exits between the benzene ring of the substituent X (that is, the benzene ring of the styrene derivative group) and the benzene ring of the main skeleton in a resultant polymer.
  • Examples of the vinyl compound having such an adjusting portion with the straight chain structure include 1,3 butyleneglycol dimethacrylate, 1,4 butanediol dimethacrylate, 1,5 petandiol dimethacrylate, 1,6 hexanediol dimethacrylate, ethyleneglycol dimethacrylate, diethyleneglycol dimethacrylate, tryethyleneglycol dimethacrylate, tetraethyleneglycol dimethacrylate, polyethyleneglycol dimethacrylate, polyestertype dimethacrylate, bis(methacryloxyethyl) phosphate, neopentylglycol dimethacrylate, dipropyleneglycol dimethacrylate, polypropyleneglycol dimethacrylate, and the like.
  • the adjusting portion is comprised of a number of atoms, and in the atoms preferably 15 to 50 atoms, and more preferably 20 to 30 atoms form the straight-chain structure. This makes it possible to maintain the interval between the main skeletons at an appropriate distance bywhich interaction between themain skeletons does not occur in a resultant polymer to be formed from the composition. Therefore, the polymer can exhibit a higher carrier transport ability.
  • n 12 is an integer of 5 to 15, and two A 1 S may be the same or different and each independently represents a hydrogen atom or a methyl group.
  • the polymer can exhibit a higher carrier transport ability.
  • n 12 is in the range of 6 to 9. By setting- n 12 within the above range, the effect mentioned above is exhibited more conspicuously.
  • examples of the vinyl compound having an adjusting portionwitha ring structure include divinylbenzene, 2,2-bis(4-(meth)acryloxypolyethoxyphenyl)propane, and the like.
  • the ring structure may be constituted rfrom a hydrocarbon ring or a hetero ring, and preferably the zring structure is constituted from an aromatic ring, and more preferably the ring structure is constituted from an aromatic hydrocarbon ring.
  • Such avinyl compound maybe the type in which the reactive group is bonded to the ring structure thereof through other structure, but preferably the reactive group is bonded to the ring structure directly. Further, in the case where there are two reactive groups, it is sufficient that one of the reactive groups is bonded to the ring structure directly, but it is preferred that both the reactive groups are bonded to the ring structure directly. This makes it possible to exhibit the effect mentioned above more conspicuously.
  • avinyl compoundinwhich twovinyl groups are bonded to abenzene ring directly, that is divinylbenzene is particularly preferred.
  • the two reactive groups are positioned with respect to the ring structure so that the reactive groups aremostly far away fromto each other. In other word, it is preferred that the two reactive groups positioned with respect to the ring structure so that the reactive groups form a line symmetry relationship in a state that they are bonded to the ring structure.
  • the two vinyl groups are bonded to the 1-position and the 6-position, respectively. This makes it possible to decrease interaction between the main skeletons which are bondedvia the divinylbenzene more appropriately. As a result, a resultant polymer to be formed from the composition can exhibit a higher carrier transport ability.
  • a vinyl compound comprisedof as its major component polyethyleneglycol di(meth)acrylate represented by the above-mentioned general formula (El) or divinylbenzene is particularly preferred.
  • vinyl compounds having one reactive group or three or more reactive groups can be used in addition to the vinyl compound mentioned above.
  • Examples of such a vinyl compound having one reactive group include styrene, vinyltoluene, ⁇ -methylstyrene, ⁇ -chlorostyrene, 2-vinylpiridine, metyl(meth)acrylate, n-butyl(meth)acrylate, glycidyl(meth)acrylate.
  • (meth)acryloxyethylphsphate N-methylol(meth)acrylamide, N,N-dimethyl(meth)acrylamide, diacetone(meth)acrylamide, allylglycidylether, diethylaminoethyl(meth)acrylate, (meth)acrylate and the like.
  • Examples of a vinyl compound having three reactive groups include pentaerythritol tri(meth)acrylate, trimethylolethane tri(meth)acrylate, trimethylolpropane tri(meth)acrylate, and the like.
  • examples of a vinyl compound having four reactive groups include tetramethylolmethane tetra(meth)acrylate and the like.
  • the conductive layer formed of the conductive material mentioned above has excellent solvent resistance, because it is mainly formed of a polymer in the form of a network obtained by polymerization reaction. As a result, in the case where the upper layer is formed onto the conductive layer in contact therewith, it is possible to prevent assuredly the conductive layer from being swelled up or dissolved by the solvent or dispersant contained in a material for forming the upper layer.
  • the polymer is obtained by reacting or bonding the styrene derivative groups of the substituents X directly or via the vinyl compound. Since such styrene derivative group exhibits a particularly excellent bonding stability, it is possible to prevent the conductive layer from being swelled up or dissolved reliably.
  • the electronic device of the present invention is embodied as an organic electroluminescent device (hereinafter, simply referred to as an "organic EL device”) that is a light emitting device.
  • organic EL device organic electroluminescent device
  • FIG. 1 is a cross-sectional view which shows an example of the organic EL device.
  • the organic EL device 1 shown in FIG. 1 includes a transparent substrate 2, an anode 3 provided on the substrate 2, an organic EL layer 4 provided on the anode 3, a cathode 5 provided on the organic EL layer 4 and a protection layer 6 provided so as to cover these layers 3, 4 and 5.
  • the substrate 2 serves as a support for the organic EL device 1, and the layers described above are formed on the substrate 2.
  • a material having a light-transmitting property and a good optical property can be used as a constituent material of the substrate 2.
  • a material having a light-transmitting property and a good optical property include various resins such as polyethylene terephthalate, polyethylene naphthalate, polypropylene, cycloolefin polymer, polyamide, polyethersulfone, polymethylmethacrylate, polycarbonate, and polyarylate, and various glass materials, and the like. At least one of these materials can be used as a constituent material of the substrate 2.
  • the thickness of the substrate 2 is not particularly limited, but is preferably in the range of about 0.1 to 30 mm, more preferably in the range of about 0.1 to 10 mm.
  • the anode 3 is an electrode which injects holes into the organic EL layer 4 (that is, into a hole transport layer 41 described later) .
  • This anode 3 is made substantially transparent (which includes transparent and colorless, colored and transparent, or translucent) so that light emission from the organic EL layer 4 (that is, from a light emitting layer 42 described later) can be visually identified.
  • anode material a material having a high work function, excellent conductivity, and a light transmitting property is preferably used as the constituent material of the anode 3 (hereinafter, referred to as "anode material").
  • anode material examples include oxides such as ITO (Indium Tin Oxide), SnO 2 , Sb-containing SnO 2 , and Al-containing ZnO, Au, Pt, Ag, Cu, and alloys containing two or more of them. At least one of these materials can be used as an anode material .
  • oxides such as ITO (Indium Tin Oxide), SnO 2 , Sb-containing SnO 2 , and Al-containing ZnO, Au, Pt, Ag, Cu, and alloys containing two or more of them. At least one of these materials can be used as an anode material .
  • the thickness of the anode 3 is not limited to any specific value, but is preferably in the range of about 10 to 200 nm, more preferably in the range of about 50 to 150 nm. If the thickness of the anode 3 is too thin, there is a case that a function of the anode 3 will not be sufficiently exhibited. On the other hand, if the anode 3 is too thick, there is a case that the light transmittance will be significantly lowered depending on, for example, the kind of anodematerial used, thus resulting in an organic EL device that is not suitable for practical use.
  • conductive resins such as polythiophene, polypyrrole, and the like can also be used as the anode material.
  • the cathode 5 is an electrode which injects electrons into the organic EL layer 4 (that is, into an electron transport layer 43 described later) .
  • cathode material As a constituent material of the cathode 5 (hereinafter, referred to as "cathode material” ) , amaterial having a lowwork function is preferably used.
  • cathode material examples include Li, Mg, Ca, Sr, La, Ce, Er, Eu, Sc, Y, Yb, Ag, Cu, Al, Cs, Rb, and alloys containing two or more of them. At least one of these materials can be used as a cathode material. Particularly, in the case where an alloy is used as a cathode material, an alloy containing a stable metallic element such as Ag, Al, or Cu, specifically an alloy such as MgAg, AlLi, or CuLi is preferablyused. The use of such an alloy as a cathode material makes it possible to improve the electron injection efficiency and stability of the cathode 5.
  • the thickness of the cathode 5 is preferably in the range of about 1 nm to 1 ⁇ m, more preferably in the range of about 100 to 400 nm. If the thickness of the cathode 5 is too thin, there is a case that a function of the cathode 5 will not be sufficiently exhibited. On the other hand, if the cathode 5 is too thick, there is a case that the light emitting efficiency of the organic EL device 1 will be lowered.
  • the organic EL layer 4 is provided between the anode 3 and the cathode 5.
  • the organic EL layer 4 includes the hole transport layer 41, the light emitting layer 42, and the electron transport layer 43. These layers 41, 42 and 43 are formed on the anode 3 in this order.
  • the hole transport layer 41 has the function of transporting holes, which are injected from the anode 3, to the light emitting layer 42.
  • the electron transport layer 43 has the function of transporting electrons, which are injected from the cathode 5, to the light emitting layer 42.
  • the conductive material according to the present invention can be used as a constituent material for one of the hole transport layer 41 and the electron transport layer 43 or for both the layers 41, 43.
  • a compound having a chemical structure of the group Y which is constituted from a substituted or unsubstituted aromatic hydrocarbon ring can be used.
  • constituent material of the electron transport layer 43 are not limited to specific materials, and various materials can be used for the electron transport layer 43.
  • Examples of such materials that can be used for the electron transport layer 43 include: benzene-based compounds (starburst-based compounds) such as 1,3,5-tris[ (3-phenyl-6-tri-fluoromethyl)quinoxaline-2-yl] benzene (TPQl), and
  • TPQ2 1,3,5-tris[ ⁇ 3-(4-t-butylphenyl)-6-trisfluoromethyl ⁇ quinoxal ine-2-yl]benzene
  • naphthalene-based compounds such as naphthalene
  • phenanthrene-based compounds such as phenanthrene
  • chrysene-based compounds such as chrysene
  • perylene-based compounds such as perylene,- anthracene-based compounds such as anthracene
  • pyrene-based compounds such as pyrene
  • acridine-based compounds such as acridine
  • stilbene-based compounds such as stilbene
  • thiophene-based compounds such as BBOT
  • butadiene-based compounds such as i butadiene
  • coumarin-based compounds such.
  • coumarin as coumarin
  • quinoline-based compounds such as quinoline
  • bistyryl-based compounds such as bistyryl
  • pyrazine-based compounds such as pyrazine and distyrylpyrazine
  • quinoxaline-based compounds such as quinoxaline
  • benzoquinone-based compounds such as benzoquinone, and 2, 5-diphenyl-pa.ra-benzoquinone
  • naphthoquinone-based compounds such as naphthoquinone
  • anthraquinone-based compounds such as anthraquinone
  • oxadiazole-based compounds such as oxadiazole, 2- (4-biphenylyl) -5-(4-1-butylphenyl) -1,3, 4-oxadiazole (PBD) , BMD, BND, BDD, and BAPD
  • triazole-based compounds such as triazole, and 3,4,5-triphenyl-l,2,4-tri
  • fluorenone-based compounds such as fluorenone, and 1,3,8-trinitro-fluorenone (TNF); diprienoquinone-based compounds such as diphenoquinone, and MBDQ; stilbenequinone-based compounds such as stilLbenequinone, and MBSQ; anthraquinodimethane-based compounds; thiopyran dioxide-based compounds; fluorenylic ⁇ enemethane-based compounds; diphenyldicyanoethylene-based compounds; florene-based compounds such as flore ⁇ e; metallic or non-metallic phthalocyanine-based compounds such as phthalocyanine, copper phthalocyanine, and iron phthalocyanine; and various metal complexes such as 8-hydroxyquinoline aluminum (AIq 3 ), and complexes having benzooxazole or benzothiazole as a ligand.
  • TNF 1,3,8-trinitro-fluorenone
  • diprienoquinone-based compounds such as diphenoquinon
  • a constituent material of the hole transport layer 41 and a constituent material of the electron transport layer 43 are selected in consideration of their hole transport ability and electron transport ability.
  • these constituent materials are selected so that the hole transport ability of the hole transport layer 41 becomes relativelyhigher than that of the electron transport layer 43 and the electron transport ability of the hole transport layer 41 becomes relatively lower than that of the electron transport layer 43.
  • these constituent materials are selected so that the electron transport ability of the electron transport layer 43 becomes relatively higher than that of the hole transport layer 41 and the hole transport ability of the electron transport layer 43 becomes relatively lower than that of the hole transport layer 41.
  • a conductive material for forming an electron transport layer 43 is preferably a polymer of a compound represented by the general formula (Al) in which the group Y has a chemical structure represented by the chemical formula (D7) or (D19).
  • a polymer of a compound represented by the general formula (Al) in which the group Y has a chemical structure represented by the chemical formula (Dl7) may also be used as a conductive material for forming the i electron transport layer 43.
  • the conductive material for forming the hole transport layer 41 may also be a polymer of a compound represented by the general formula (Al) in which the group Y has a chemical structure represented by the chemical formula (D2) or (D16) .
  • the volume resistivity of the hole transport layer 41 is preferably 10 ⁇ -cm or larger, more preferably 10 2 ⁇ -cm or larger. This makes it possible to provide an organic EL device 1 having a higher light emitting efficiency.
  • the thickness of thehole transport layer 41 is not limited to any specific value, but is preferably in the range of about 10 to 150 nm, more preferably in the range of about 50 to 100 nm. If the thickness of the hole transport layer 41 is too thin, there is a case that a pin hole may be produced. On the other hand, if the thickness of the hole transport layer 41 is too thick, there is a case that the transmittance of the hole transport layer 41 may be lowered so that the chromaticity (hue) of luminescent color of the organic EL device 1 is changed.
  • the thickness of the electron transport layer 43 is not limited to any specific value, but is preferably in the range of about 1 to 100 nm, more preferably in the range of about 20 to 50 nm. If the thickness of the electron transport layer 43 is too thin, there is a case that a pin hole may be produced, thereby causing a short-circuit. On the other hand, if the electron transport layer 43 is too thick, there is a case that the value of resistance may become high.
  • the conductivematerial according to the present invention is particularly useful for forming a relatively thin hole transport layer 41 or electron transport layer 43.
  • any material can be used as a constituent material of the light emitting layer 42 (hereinafter, referred to as "light emittingmaterial” ) so long as it can provide a fieldwhere holes can be injected from the anode 3 and electrons can be injected from the cathode 5 during the application of a voltage to allow the holes and the electrons to be recombined.
  • Such light emitting materials include various low-molecular light emitting materials and various high-molecular light emitting materials (which will be mentioned below) . At least one of these materials can be used i as a light emitting material.
  • the use of a low-molecular light emitting material makes it possible to obtain a dense light emitting layer 42, thereby improving the light emitting efficiency of the light emitting layer 42. Further, since a high-molecular light emitting material is relatively easily dissolved in a solvent, the use of such a high-molecular light emitting material makes it easy to form a light emitting layer 42 by means of various application methods such as an ink-jet method and the like.
  • the low-molecular light emitting material and the high-molecular light emitting material are used together, it is possible to obtain the synergistic effect resulting from the effect of the low-molecular light emitting material and the effect of the high-molecular light emitting material. That is, it is possible to obtain the effect that a dense light emitting layer 42 having excellent light emitting efficiency can be easily formed by means of various application methods such as the ink-jet method and the like.
  • Examples of such a low-molecular light emitting material include: benzene-based compounds such as distyrylbenzene (DSB) , and diaminodistyrylbenzene (DADSB); naphthalene-based compounds such as naphthalene and Nile red; phenanthrene-based compounds such as phenanthrene; chrysene-based compounds such as chrysene and 6-nitrochrysene; perylene-based compounds such as perylene and
  • benzene-based compounds such as distyrylbenzene (DSB) , and diaminodistyrylbenzene (DADSB)
  • naphthalene-based compounds such as naphthalene and Nile red
  • phenanthrene-based compounds such as phenanthrene
  • chrysene-based compounds such as chrysene and 6-nitrochrysene
  • perylene-based compounds such as perylene and
  • BPPC 10-perylene-di-carboxy imide
  • coronene-based compounds such as coronene
  • i anthracene-based compounds such as anthracene and bisstyrylanthracene
  • pyrene-based compounds such as pyrene
  • pyran-based compounds such as
  • acridine-based compounds such as acridine
  • stilbene-based compounds such as stilbene
  • thiophene-based compounds such as 2, 5-dibenzooxazolethiophene
  • benzooxazole-based compounds such as benzooxazole
  • benzoimidazole-based compounds such as benzoimidazole
  • benzothiazole-based compounds such as 2,2 ' -(para-phenylenedivinylene) -bisbenzothiazole
  • butadiene-based compounds such as bistyryl(1,4-diphenyl-l,3-butadiene) and tetraphenylbutadiene
  • naphthalimide-based compounds such as naphthalimide
  • coumarin-based compounds such as coumarin
  • perynone-based compounds such as perynone
  • Examples of a high-molecular light emitting material include polyacetylene-based compounds such as trans-type polyacetylene, cis-type polyacetylene, poly(di-phenylacetylene) (PDPA), and poly(alkyl, phenylacetylene) (PAPA); polyparaphenylenevinylene-based compounds such as poly(para-phenylenevinylene) (PPV) , poly(2, 5-dialkoxy-para-phenylenevinylene) (RO-PPV) , cyano-substituted-poly(para-phenylenevinylene) (CN-PPV) , poly(2-dimethyloctylsilyl-para-phenylenevinylene) (DMOS-PPV), and poly(2 ⁇ methoxy-5- (2 ' -ethylhexoxy) -para-phenylenevinylene)_ (MEH-PPV) ; polythiophene-based compounds such as poly(3-al
  • the conductive material according to the present invention can also be used as the light emitting material depending on the combination of constituent materials used for forming a hole transport layer 41 and an electron transport layer 43.
  • poly(thiophene/styrenesulfonic acid) such as poly(3,4-ethylenedioxythiophene/styrenesulfonic acid) or an arylamine compound such as
  • N,N' -bis(l-naphthyl) -N,N' -diphenyl-benzidine( ⁇ -NPD) is used as a constituent material of the hole transport layer 41 and a triazole-based compound such as 3,4,5-triphenyl-l,2,4-triazole or an oxadiazole compound such as 2-(4-t-butylphenyl) -5- (biphenyl-4-yl)-1,3,5-oxadiazole (PBD) is used as a constituent material of the electron transport layer 43, a polymer of the compound represented by the general formula (Al) in which the group Y has a chemical structure represented by the chemical formula (Dl2) or (Dl4) can be used as a conductive material for forming a light emitting layer 42.
  • a triazole-based compound such as 3,4,5-triphenyl-l,2,4-triazole or an oxadiazole compound such as 2-(4-t-butyl
  • the thickness of the light emitting layer 42 is not limited to any specific value, but is preferably in the range of about 10 to 150 nm, more preferably in the range of about 50 to 100 nm. By setting the thickness of the light emitting layer to a value within the above range, recombination of holes and electrons efficiently occurs, thereby enabling the light emitting efficiency of the light emitting layer 42 to be further" improved.
  • any one of the electron- transport layer 41, the light emitting layer 42, and the electron transport layer 43 in the organic EL device 1 may be formed using the conductive material according to the present invention or all the layers 41, 42, and 43 may be formed using" the conductive material according to the present invention.
  • each of the light emitting layer 42, the hole transport layer 41, and the electron, transport layer 43 is separately provided, they may be formecL into a hole-transportable light emitting layer which combines the hole transport layer 41 with the light emitting layer 42 or an electron-transportable light emitting layer which. combines the electron transport layer 43 with the light emitting" layer 42.
  • an area in the vicinity of the boundary between the hole-transportable light emitting layer and the electron transport layer 43 or an area in the vicinity of the boundary between the electron-transportable light emitting" layer and the hole transport layer 41 functions as the light emitting layer 42.
  • holes injected from an anode into the hole-transportable light emitting layer are trapped by the electron transport layer
  • electrons injected from a cathode into the electron-transportable light emitting layer are trapped in the electron-transportable light emitting layer.
  • any additional layer may be provided according to its purpose.
  • a hole injecting layer for improving the injection efficiency of holes from the anode 3 may be providedbetween the hole transport layer 41 and the anode 3, or an electron injecting layer for improving the injection efficiency of electrons from the cathode 5 may be provided between the electron transport layer 43 and the cathode 5.
  • the conductive material according to the present invention can be used as a constituent material of the hole injecting layer and/or the electron injecting layer.
  • a constituent material of a hole injecting layer other than the conductive material according to the present invention for example, copper phthalocyanine, 4,4' ,4' ' -tris(N,N-phenyl-3-methylphenylamino)triphenylamine (M-MTDATA), or the like can be used.
  • M-MTDATA 4,4' ,4' ' -tris(N,N-phenyl-3-methylphenylamino)triphenylamine
  • the protection layer 6 is provided so as to cover the layers 3, 4 and 5 constituting the organic EL device 1.
  • This protection layer 6 has the function of hermetically sealing the layers 3, 4 and 5 constituting the organic EL device 1 to shut off oxygen and moisture.
  • Examples of a constituent material of the protection layer 6 include Al, Au, Cr, Nb, Ta and Ti, alloys containing them, silicon oxide, various resin materials, and the like.
  • a conductive material is used as a constituent material of the protection layer 6, it is preferred that an insulating film is provided between the protection layer 6 and each of the layers 3, 4 and 5 to prevent a short circuit therebetween, if necessary.
  • the organic EL device 1 can be used for a display, for example, but it can also be used for various optical purposes such as a light source and the like.
  • the drive system thereof is not particularly limited, and either of an active matrix system or a passive matrix system may be employed.
  • the organic EL device 1 as described above can be manufactured in the following manner, for example.
  • an anode 3 is formed on the substrate 2.
  • the anode 3 can be formed by, for example, chemical vapoar deposition (CVD) such as plasma CVD, thermal CVD, and laser CVD M vacuum deposition, sputtering, dry plating such as ion plating . wet plating such as electrolytic plating, immersion plating trustee and electroless plating, thermal spraying, a sol-gel method, a MOD method, bonding of a metallic foil, or the like.
  • CVD chemical vapoar deposition
  • sputtering dry plating such as ion plating .
  • wet plating such as electrolytic plating, immersion plating reader and electroless plating, thermal spraying, a sol-gel method, a MOD method, bonding of a metallic foil, or the like.
  • a composition for conductive materials of the present invention (hereinafter, also referred to as a "hole transport material”) is applied or supplied onto the anode 3.
  • the mixing ratio between the compound represented by the general formula (Al ) and the vinyl compound in the composition for conductive materials is preferably 9: 1 to 3: 2, more preferably 4: 1 to 7: 3, in terms of mole ratio, which are slightly changed, depending on the kinds of the vinyl compound.
  • various application methods such as a spin coating method, a casting method, a micro gravure coating method, a gravur * e coating method, a bar coating method, a roll coating method, a wire-bar coating method, a dip coating method, a spray coating method, a screen printing method, a flexographic printing j method, an offset printing method, an ink-jet method, and the like can be employed. According to such an application method, it is possible to relatively easily supply the hole transport material onto the anode 3.
  • examples of such a solvent or dispersion medium include: inorganic solvents such as nitric acid, sulfuric acid, ammonia, hydrogen peroxide, water, carbon disulfide, carbon tetrachloride, and ethylene carbonate; and various organic solvents such as ketone-based solvents e.g., methyl ethyl ketone (MEK), acetone, diethyl ketone, methyl isobutyl ketone (MIBK), methyl isopropyl ketone (MIPK), and cyclohexanone, alcohol-based solvents e.g., methanol, ethanol, isopropanol, ethylene glycol, diethylene glycol (DEG), and glycerol, ether-based solvents e.g., diethyl ether, diisopropyl ether, 1,2-dimethoxy ethane (DME),
  • inorganic solvents such as nitric acid, sulfuric acid, ammoni
  • methyl cellosolve ethyl cellosolve, and phenyl cellosolve
  • aliphatic hydrocarbon-based solvents e.g, hexane, pentane, heptane, and cyclohexane
  • aromatic hydrocarbon-based solvents e.g.
  • aromatic heterocyclic compound-based solvents e.g., pyridine, pyrazine, furan, pyrrole, thiophene, and methyl pyrrolidone
  • amide-based solvents e.g., N,N-dimethylformamide (DMF) and N,N-dimethylacetamide (DMA)
  • halogen compound-based solvents e.g., dichloromethane, chloroform, and 1,2-dichloroethane
  • i ester-based solvents e.g., ethyl acetate, methyl acetate, and ethyl formate
  • sulfur compound-based solvents e.g., dimethyl sulfoxide (DMSO) and sulfolane
  • nitrile-based solvents e.g., acetonitrile, propionitrile, and acrylonitrile
  • the composition for conductive materials preferably contains a polymerization initiator.
  • a polymerization initiator By adding a polymerization initiator to the composition for conductive materials, it is possible to promote direct polymerization reaction of substituents X or polymerization reaction of substituents X via the vinyl compound when predetermined treatment such as heating or light irradiation is carried out in the next step [A2-2].
  • Examples of such a polymerization initiator include, but are not limited thereto, photopolymerization initiators such as photo-radical polymerization initiators and cationic photopolymerization initiators, heat polymerization initiators, and anaerobic polymerization initiators. Among them, photo-radical polymerization initiators are particularly preferably used. By using such photo-radical polymerization initiator, it is possible to promote direct polymerization reaction of substituents X or polymerization reaction of substituents X via the vinyl compound in the next step [A2-2] relatively easily. As such a photo-radical polymerization initiator, j various photo-radical polymerization initiators can be used.
  • photo-radical polymerization initiators examples include benzophenone-based photo-radical polymerization initiator, benzoin-based photo-radical polymerization initiator, acetophenone-based photo-radical polymerization initiator, benzyketal-based photo-radical polymerization initiator, mihilarsketone-based photo-radical polymerization initiator, acylphosphine oxide-based photo-radical polymerization initiator, keto-coumarin-based photo-radical polymerization initiator, xanthene-based photo-radical polymerization initiator, and thioxanthene-based photo-radical polymerization initiator, and the like.
  • a sensitizer suitable for the photopolymerization initiator may be added to the composition for conductive materials.
  • the hole transport material supplied onto the anode 3 is irradiated with light.
  • substituents X of the compounds each represented by the general formula (Al) and contained in the hole transport material are polymerized directly or via the vinyl compound to obtain a polymer having a network structure (that is, a conductive material according to the present invention) .
  • a hole transport layer 41 mainly comprised of the conductive material according to the present invention is formed on the anode 3 .
  • a hole transport layer 41 By forming a hole transport layer 41 using the conductive material according to the present invention as its mainmaterial, it is possible to prevent the hole transport layer 41 from swelling and being dissolved due to a solvent or dispersion medium contained in a light emitting layer material to be supplied onto the hole transport layer 41 in the next step [A3] . As a result, mutual dissolution between the hole transport layer 41 and the light emitting layer 42 is reliably prevented.
  • a hole transport layer 41 using the conductive material (that is, the polymer) according to the present invention as its main material, it is also possible to reliably prevent the mixing of the constituent materials of the hole transport layer 41 and the light emitting layer 42 from occurring near the boundary between these layers 41 and 42 in a resultant organic EL device 1 with the lapse of time.
  • the conductive material that is, the polymer
  • the weight-average molecular weight of the polymer is not particularly limited, but is preferably in the range of about 1,000 to 1,000,000, more preferably in the range of about 10,000 to 300,000. By setting the weight-average molecular weight of the polymer to a value within the above range, it is possible to suppress or prevent the swelling and dissolution of the polymer more reliably.
  • the hole transport layer 41 may contain a monomer or oligomer of the compound represented by the general formula (Al) and/or a monomer or oligomer of the vinyl compound to the extent that mutual dissolution between i the hole transport layer 41 and the light emitting layer 42 can be prevented.
  • the hole transport material for example, infrared rays, visible light, ultraviolet rays, or X-rays can be used. These types of light can be used singly or in combination of two or more of them. Among them, ultraviolet rays are particularly preferably used. By using ultraviolet rays, it is possible to easily and reliably polymerize the substituents X directly or via the vinyl compound.
  • the wavelength of ultraviolet rays to be used for light irradiation is preferably in the range of about 100 to 420 nm, more preferably in the range of about 150 to 400 nm.
  • the irradiation intensity of ultraviolet rays is preferably in the range of about 1 to 600 mW/cm 2 , more preferably in the range of about 1 to 300 mW/cm 2 .
  • the irradiation time of ultraviolet rays is preferably in the range of about 60 to 600 seconds, more preferably in the range of about 90 to 500 seconds.
  • the resultant hole transport layer 41 may be subjected to heat treatment in the atmosphere or an inert atmosphere or under reduced pressure (or under vacuum) when necessary. By doing so, it is possible to dry (that is, it is possible to remove a solvent or a dispersion medium) or solidify the hole transport layer 41.
  • the hole transport layer 41 may be dried by means other than heat treatment.
  • predetermined treatment for polymerizing the substituents X directly or via the vinyl compound other than light irradiation include heating and anaerobic treatment.
  • light irradiation as described above is preferably employed. By employing light irradiation, it is possible to relatively easily select the area where a polymerization reaction is carried out and the degree of polymerization.
  • a light emitting layer 42 is formed on the hole transport layer 41.
  • the light emitting layer 42 can be formed by, for example, applying onto the hole transport layer 41, a light emitting layer material (that is, amaterial for forming a light emitting layer) obtained by dissolving the light emitting material as described above in a solvent or dispersing the light emitting material in a dispersion medium.
  • a light emitting layer material that is, amaterial for forming a light emitting layer
  • solvents or dispersion media in which the light emitting material is to be dissolved or dispersed the same solvents or dispersion media that have been mentioned with reference to the step of forming the hole transport layer [A2] can be used.
  • the electron transport layer 43 can be formed using the composition for conductive materials according to the present invention in the same manner that has been described with reference to the step of forming the hole transport layer [A2].
  • the electron transport layer 43 can be formed using the known electron transport materials described above in the same manner that has been described with reference to the step of forming the light emitting layer [A3]. It is to be noted that in the case where the light emitting i layer 42 is not formed using a polymer such as the conductive material according to the present invention, a solvent or dispersion medium in which the composition for conductive materials for use in forming the electron transport layer 43 is to be dissolved or dispersed is selected from among those which do not cause swelling and dissolution of the light emitting layer 42. By using such a solvent or a dispersion medium, it is possible to reliably prevent mutual dissolution between the light emitting layer 42 and the electron transport layer 43.
  • acathode 5 is formed on the electron transport layer 43.
  • the cathode 5 can be formed by, for example, vacuum deposition, sputtering, bonding of ametallic foil, or the like.
  • a protection layer 6 is formed so as to cover the anode 3, the organic EL layer 4, and the cathode 5.
  • the protection layer 6 can be formed or provided by, for example, bonding a box-like protection cover made of the material as mentioned above by the use of various curable resins (adhesives) .
  • thermosetting resins As for such curable resins, all of thermosetting resins, photocurable resins, reactive curable resins, and anaerobic curable resins can be used.
  • the organic EL device 1 is manufactured through these steps as described above.
  • the electronic device of the present invention is embodied as an organic thin film transistor that is a switching element (hereinafter, simply referred to as an "organic TFT") .
  • FIG. 2(a) is a cross-sectional view of an organic TFT 10
  • FIG. 2(b) is a plan view of the organic TFT 10. It is to be noted that in the following description, the upper side and the lower side in FIG. 2(a) will be referred to as “upper side” and “lower side”, respectively.
  • the organic TFT 10 shown in FIG. 2 is provided on a substrate 20.
  • a source electrode 30, a drain electrode 40, an organic semiconductor layer (that is, a conductive layer according to the present invention) 50, a gate insulating layer 60, and a gate electrode 70 are laminated in this order from the side of the substrate 20.
  • the source electrode 30 and the drain electrode 40 are separately provided on the substrate 20, and the organic semiconductor layer 50 is provided so as to cover these electrodes 30 and 40.
  • the gate insulating layer 60 is provided on the organic semiconductor layer 50.
  • the gate electrode 70 is provided so as to overlap with at least a region between the source electrode 30 and the drain electrode 40.
  • the region in the organic semiconductor layer 50 which is existed between the source electrode 30 and the drain electrode 40 functions as a channel region 510 where carriers are moved.
  • channel length L the length of the channel region 510 in a direction that carriers are moved, that is, the distance between the source electrode 30 and the drain electrode 40
  • channel width W the length of the channel region 510 in a direction orthogonal to the direction of the channel length L.
  • the organic TFT 10 is an organic TFT having a structure in which the source electrode 30 and the drain electrode 40 are provided so as to be closer to the substrate 20 than the gate electrode 70 provided through the gate insulating layer 60. That is, the organic TFT 10 is an organic TFT having a top gate structure.
  • the substrate 20 supports the layers (or the components) constituting the organic TFT 10.
  • a substrate 20 for example, the same substrate that has been described with reference to the substrate 2 of the organic EL device 1 can be used.
  • a silicon substrate or a gallium arsenide i substrate may be used as the substrate 20.
  • the source electrode 30 and the drain electrode 40 are provided side by side at a predetermined distance in the direction of the channel length L.
  • the constituent material of the source electrode 30 and the drain electrode 40 is not particularly limited so long as it has conductivity.
  • Examples of such a constituent material include metallic materials such as Pd, Pt, Au, W, Ta, Mo, Al, Cr, Ti, Cu, and alloys containing two ormore of them, conductive oxidematerials such as ITO, FTO, ATO, and SnO 2 , carbonmaterials such as carbon black, carbon nanotube, and fullerene, and conductive polymeric materials such as polyacetylene, polypyrrole, polythiophene e.g., PEDOT (poly-ethylenedioxythiophene) , polyaniline, poly(p-phenylene) , poly(p-phenylenevinylene) , polyfluorene, polycarbazole, polysilane, and derivatives thereof.
  • metallic materials such as Pd, Pt, Au, W, Ta, Mo, Al, Cr, Ti, Cu, and alloys containing two ormore of them
  • conductive oxidematerials
  • the conductive polymeric materials are usually dopedwith iron chloride, iodine, strong acid, organic acid, or a polymer such as polystyrenesulfonic acid so as to have conductivitywhen used. These conductive materials can be used singly or in combination of two or more of them.
  • each of the source electrode 30 and the drain electrode 40 is not particularly limited, but is preferably in the range of about 30 to 300 nm, more preferably in the range of about 50 to 200 nm.
  • the distance between the source electrode 30 and the drain electrode 40, that is, the channel length L is preferably in the range of about 2 to 30 ⁇ m, more preferably in the range of about 2 to 20 ⁇ m.
  • the channel width W is preferably in the range of about 0.1 to 5 mm, more preferably in the range of about 0.3 to 3 mm.
  • the organic semiconductor layer 50 is provided on the substrate 20 so as to cover the source electrode 30 and the drain electrode 40.
  • the conductive material according to the present invention can be used as a constituent material of the organic semiconductor layer 50.
  • the conductive material according to the present invention is useful for forming an ourganic semiconductor layer 50 because it is possible to impari: good semiconductivity to the polymer by appropriately setting the chemical structure of the group Y.
  • a polymer of the compound represented by the general formula (Al) in which the grroup Y has a chemical structure represented by the chemical formula (D2), (D3), (D16), (D17), or (D20) is preferably selected.
  • the thickness of the organic semiconductor layer 50 is preferably in the range of about 0.1 to 1,000 nm, more preferably in the range of about 1 to 500 nm, and even more preferably in the range of about 10 to 100 nm.
  • the organic semiconductor layer 50 which is obtained by using a polymer such as the conduct!.ve material according to the present invention as its main material, it is possible to obtain an organic TFT 10 having reduced size and weight. In addition, it is also possible for the organic TFT 10 to have excellent flexibility. Such an organic TFT 10 is suitably used for a switching element of a flexi_ble display provided with the organic EL devices described above.
  • the organic semiconductor layer 50 is not limited to one provided so as to cover the source electrode 30 and the drain electrode 40.
  • the organic semiconductor layer 50 should be provided in at least the region between the source electrode 30 and the drain electrode 40 (that is, in at least the channel region 510) .
  • the gate insulating ILayer 60 is provided on the organic semiconductor layer 50.
  • the gate insulating layer 60 is provided to insulate the gate electrode 70 from the source electrode 30 and the drain electrode 40.
  • the gate insulating layer 60 is preferably formed using an organicmaterial (especially, an organic polymericmaterial) as its main material.
  • an organic material especially, an organic polymericmaterial
  • organic polymeric material examples include polystyrene, polyimide, polyamideimide, polyvinylphenylene, polycarbonate (PC) , acrylic resins . such as polymethylmethacrylate (PMMA), fluorinated resins such as polytetrafluoroethylene (PTFE), phenolic resins such as polyvinyl phenol and novolac resins, and olefin-based resins such as polyethylene, polypropylene, polyisobutylene, and polybutene.
  • PMMA polymethylmethacrylate
  • fluorinated resins such as polytetrafluoroethylene (PTFE)
  • phenolic resins such as polyvinyl phenol and novolac resins
  • olefin-based resins such as polyethylene, polypropylene, polyisobutylene, and polybutene.
  • the thickness of the gate insulating layer 60 is not particularly limited, but is preferably in the range of about 10 to 5,000 nm, more preferably in the range of about 100 to 1,000 nm. By setting the thickness of the gate insulating layer 60 to a value within the above range, it is possible to prevent the size of the organic TFT 10 from being increased (especially, an increase in thickness of the organic TFT 10) while reliably insulating the gate electrode 70 from the source electrode 3 i and the drain electrode 40.
  • the gate insulating layer 60 is not limited to one comprised of a single layer and may have two or more layers.
  • the gate electrode 70 is provided on the gate insulating layer 60.
  • constituent materials of the gate electrode 70 the same constituent materials that have been mentioned with reference to the source electrode 30 and the drain electrode 40 can be used.
  • the thickness of the gate electrode 70 is not particularly limited, but is preferably in the range of about 0.1 to 5,000 nm, more preferably in the range of about 1 to 5,000 nm, even more preferably in the range of about 10 to 5,000 nm.
  • the amount of current flowing between the source electrode 30 and the drain electrode 40 is controlled by changing voltage applied to the gate electrode 70.
  • Such an organic TFT 10 as described above can be manufactured in the following manner, for example.
  • FIGs. 3 and 4 are drawings (cross-sectional views) to be used for explaining a manufacturing method of the organic TFT 10 shown in FIG. 2. It is to be noted that, in the following description, the upper side and lower side in FIGs. 3 and 4 will be referred to as the “upper side” and the “lower side”, respectively.
  • a substrate 20 as shown in FIG. 3 (a) is prepared.
  • the substrate 20 is washed with, for example, water (e.g. , pure water) and/or organic solvents.
  • Water and organic solvents may be used singly or in combination of two or more of them.
  • a photoresist is supplied onto the substrate 20 to form a film 80' (see FIG. 3 (b)).
  • a photoresist to be supplied onto the substrate 20 either a negative-type photoresist or a positive-type photoresist may be used.
  • the negative-type photoresist an area irradiated with light (that is, an area exposed to light) is cured and then an area other than the area exposed to light is dissolved by development to be removed.
  • the positive-type photoresist an area exposed to light is dissolved by development to be removed.
  • Examples of such a negative-type photoresist include water-soluble photoresists such as rosin-dichromate, polyvinyl alcohol (PVA)-dichromate, shellac-dichromate, casein-dichromate, PVA-diazo, and acrylic photoresists and oil-soluble photoresists such as polyvinyl cinnamate, cyclized rubber-azide, polyvinyl cinnamylidene acetate, and polycinnamic acid ⁇ -vinyloxyethyl ester.
  • water-soluble photoresists such as rosin-dichromate, polyvinyl alcohol (PVA)-dichromate, shellac-dichromate, casein-dichromate, PVA-diazo, and acrylic photoresists and oil-soluble photoresists such as polyvinyl cinnamate, cyclized rubber-azide, polyvinyl cinnamyliden
  • Examples of a positive-type photoresist include oil-soluble photoresists such as o-naphthoquinonediazide.
  • Any method can be used for supplying a photoresist onto the substrate 20, but various application methods are preferably employed.
  • the same methods that have been mentioned with reference to the step of forming the hole transport layer [A2] in the manufacturing method of the organic EL device 1 can be employed.
  • the film 80 ' is exposed to light through a photomask i and is then developed to form a resist layer 80 having openings
  • a predetermined amount of a liquid material 90 containing a constituent material of a source electrode 30 and a drain electrode 40 to be formed or a precursor thereof is supplied to the openings 820 provided on the substrate 20.
  • solvents or dispersion media in which a constituent material of a source electrode 30 and a drain electrode 40 or a precursor thereof is dissolved or dispersed for preparing a liquid material 90 the same solvents or dispersion media that have been mentioned with reference to the step of forming hole transport layer [A2] can be used.
  • an inkjet method that is, a liquid droplet ejecting method
  • adhesion of the liquid material 90 to the resist layer 80 is reliably prevented.
  • the solvent or dispersion medium contained in the liquid material 90 supplied to the openings 820 is removed to form a source electrode 30 and a drain electrode 40.
  • the temperature at which the solvent or dispersion medium is removed is not particularly limited, and slightly varies depending on the kind of solvent or dispersion medium used. However, the temperature at which the solvent or dispersion medium is removed is preferably in the range of about 20 to 200°C, more preferably in the range of about 50 to 100°C. By removing the solvent or dispersion medium at a temperature within the above range, it is possible to reliably remove the solvent or dispersion medium from the liquid material 90.
  • the solvent or dispersion medium contained in the liquid material 90 may be removed by heating under reduced pressure. By doing so, it is possible to more reliably remove the solvent or dispersion medium from the liquid material 90.
  • the resist layer 80 provided on the substrate 20 is removed to obtain the substrate 20 on which the source electrode 30 and the drain electrode 40 are formed (see FIG. 4(a)).
  • Amethod for removing the resist layer 80 is appropriately selected depending on the kind of resist layer 80.
  • ashing such as plasma treatment or ozone treatment, irradiation with ultraviolet rays, or irradiation with a laser such as a i Ne-He laser, an Ar laser, a CO 2 laser, a ruby laser, a semiconductor laser, a YAG laser, a glass laser, a YVO 4 laser, or an excimer laser may be carried out.
  • the resist layer 80 may removed by being brought into contact with a solvent capable of dissolving or decomposing the resist layer 80 by, for example, immersing the resist layer 80 in such a solvent.
  • an organic semiconductor layer 50 is formed on the substrate 20 so as to cover the source electrode 30 and the drain electrode 40 provided on the substrate 20.
  • a channel region 510 is formed between the source electrode 30 and the drain electrode 40 (that is, in an area corresponding to an area where a gate electrode 70 is to be formed) .
  • the organic semiconductor layer 50 can be formed using the composition for conductive materials according to the present invention by the same method that has been described with reference to the step of forming the hole transport layer [A2] in the manufacturing method of the organic EL device 1.
  • the organic semiconductor layer 50 is formed using the conductive material (that is, the polymer) according to the present invention as its main material. Therefore, when a gate insulating layer material is supplied onto the organic semiconductor layer 50 in the next step [B3], swelling and j dissolution of the polymer due to a solvent or dispersion medium contained in the gate insulating layer material is appropriately inhibited or prevented. As a result, mutual dissolution between the organic semiconductor layer 50 and a gate insulating layer 60 is reliably prevented.
  • the conductive material that is, the polymer
  • an organic semiconductor layer 50 By forming an organic semiconductor layer 50 using a polymer such as the conductive material according to the present invention as its main mateirial, it is possible to reliably prevent the mixing of the coastituent materials of the organic semiconductor layer 50 and the gate insulating layer 60 from occurring near the boundary between these layers 50 and 60 with the lapse of time.
  • a gate insulating layer 60 is formed on the organic semiconductor layer 50 by an application method.
  • the gate insulating layer 60 can be formed by applying or supplying a solution containing an insulating material or a precursor thereof onto the organic semiconductor layer 50 by the application method described above.
  • the thus obtained layer is subjected to aftertreatment such as heating, irradiationwith infraredrays, or exposure to ultrasound.
  • a gate electrode 70 is formed on the gate insulating layer 60 by an application method. i
  • the gate electrode 70 can be formed by applying or supplying a solution containing an electrode material or a precursor thereof onto the gate insulating layer 60 by the applicationmethod.
  • the thus obtained layer is subjected to aftertreatment such as heating, irradiation with infrared rays, or exposure to ultrasound.
  • an inkjet method is preferably employed.
  • the inkjet method it is possible to eject a solution containing an electrode material or a precursor thereof in the form of liquid droplets from a nozzle of a liquid droplet ejecting head to carry out patterning.
  • a gate electrode 70 having a predetermined shape is easily and reliably formed on the gate insulating layer 60.
  • the organic TFT 10 is manufactured through the steps described above.
  • the electronic devices according to the present invention such as the organic EL device (which is a light emitting device) 1 and the organic TFT (which is a switching element) 10 as described above can be used for various electronic equipment .
  • FIG. 5 is a perspective view which shows the structure of a personal mobile computer (or a personal notebook computer- ) to which the electronic equipment according to the present invention is applied.
  • a personal computer 1100 is comprised of a main body 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display.
  • the display unit 1106 is rotatabLy supported by the main body 1104 via a hinge structure.
  • the displa/y unit 1106 includes the organic EL device (which is a liglxt emitting device) 1 and the organic TFT (which is a switchiixg element) 10 described above.
  • FIG. 6 is a perspective view which shows the structure of a mobile phone (including the personal handyphone system (PHS)) to which the electronic equipment according to tlxe present invention is applied.
  • PHS personal handyphone system
  • the mobile phone 1200 shown in FIG. 6 includes a plurality of operation buttons 1202, an earpiece 1204, a mouthpiece 120S, and a display.
  • the display includes the organic EL device (which is a light emitting device) 1 and the organic TFT (which is a switching element!) 10 described above.
  • FIG. 7 is a perspective view which shows the structurre of a digital still camera to which the electronic equipment according to the present invention is applied. In this drawing, i interfacing to external devices is simply illustrated.
  • an image pickup device such as a CCD (Charge Coupled Device) generates an image pickup signal (or an image signal) by photoelectric conversion of the optical image of an object.
  • CCD Charge Coupled Device
  • a display which provides an image based on the image pickup signal generated by the CCD. That is, the display functions as a finder which displays the object as an electronic image.
  • the display includes the organic EL device (which is a light emitting device) 1 and the organic TFT (which is a switching element) 10 described above.
  • the circuit board 1308 has a memory capable of storing an image pickup signal.
  • a light receiving unit 1304 including an optical lens (an image pickup optical system) and a CCD.
  • an image pickup signal generated by the CCD at that time is transferred to the memory in the circuit board 1308 and then stored therein.
  • a video signal output terminal 1312 and an input-output terminal for data communication 1314 there are provided a video signal output terminal 1312 and an input-output terminal for data communication 1314.
  • a television monitor 1430 and a personal computer 1440 are connected to the video signal output terminal 1312 and the input-output terminal for data communication 1314, respectively.
  • an image pickup signal stored in the memory of the circuit board 1308 is outputted to the television monitor 1430 or the personal computer 1440 by carrying out predetermined operation.
  • the electronic equipment according to the present invention can be applied not only to the personal computer (which is a personal mobile computer) shown in FIG.5, the mobile phone shown in FIG. 6, and the digital still camera shown in FIG. 7 but also to a television set, a video camera, a view-finer or monitor type of video tape recorder, a laptop-type personal computer, a car navigation device, a pager, an electronic notepad (which may have communication facility) , an electronic dictionary, an electronic calculator, a computerized game machine, a word processor, a workstation, a videophone, a security television monitor, an electronic binocular, a POS terminal, an apparatus providedwith a touch panel (e.g., a cash dispenser located on a financial institute, a ticket vending machine), medical equipment (e.g., an electronic thermometer, i a sphygmomanometer, a blood glucose meter, an electrocardiograph monitor, ultrasonic diagnostic equipment, an endoscope monitor) , a fish detector, various measuring instruments, gages
  • composition for conductive materials, the conductive material, the conductive layer, the electronic device, and the electronic equipment according to the present invention have been described based on the embodiments shown in the drawings, but the present invention is not limited thereto.
  • the electronic device according to the present invention has a hole transport layer as a conductive layer
  • such an electronic device can be used for, for example, a solar cell that is an example of light receiving devices (or photoelectric transducers) as well as the organic EL device as described above that is an example of display devices (or light emitting devices).
  • the electronic device according to the present invention has an organic semiconductor layer as a conductive layer
  • such an electronic device can be used for, for example, a semiconductor device as well as the organic TFT as described above that is an example of switching elements .
  • the conductive layer according to the present invention can be used as, for example, wiring or an i electrode as well as the hole transport layer as described above.
  • a resultant electronic device according to the present invention can be used for a wiring board and the like.
  • 6-(p-aminophenyl)hexanol was treated with 4-methoxybenzylbromide and sodium hydride in anhydrous dimethylformamide to transformhydroxy1 group into benzyl ether group and then it was protected.
  • 6- (p-bromophenyl)hexanol was subjected to the same treatment as that for 6-(p-aminophenyl)hexanol to transform hydroxyl group into benzyl ether group and then it was protected to obtain a dry substance (benzyl ether derivative) .
  • 0.37 mol of benzyl ether derivative obtained from 6-(p-aminophenylhexanol, 0.66 mol of benzyl ettier derivative obtained from 6- (p-bromophenyl)hexanol, 1.1 moJ- of potassium carbonate, copper powder, and iodine were mixecl and heated at 200°C. After the mixture was allowed to cool, 13 O mL of isoamyl alcohol, 50 mL of pure water, and 0.73 mol of potassslumhydroxide were added to the mixture, and then they were stiirred and dried.
  • the thus obtained compound was confirmed to be the following compound (AI) bymeans of amass spectrum (MS) method, a 1 H-nuclear magnetic resonance ( 1 H-NMR) spectrum method, a 13 C-nuclear magnetic resonance ( 13 C-NMR) spectrum method, and a Fourier transform infrared absorption (FT-IR) spectrum method.
  • MS amass spectrum
  • 1 H-NMR 1 H-nuclear magnetic resonance
  • 13 C-NMR 13 C-nuclear magnetic resonance
  • FT-IR Fourier transform infrared absorption
  • a compound (BI) was obtained in the same manner as the compound (AI) except that 4,4' -diiodobiphenyl was changed to 4,4' -diiodo-2,2' -dimethylbiphenyl.
  • a compound (CI) was obtained in the same manner as the compound (AI) except that p- (bromomethyl)styrene was changed to 2' -bromo-4-ethylstyrene.
  • a compound (DI) was obtained in the same manner as the compound (AI) except that 6-(p-aminophenyl)hexanolwas changed to 2-(p-aminophenyl)propanol and 6-(p-bromophenyl)hexanolwas changed to 2-(p-bromophenyl)propanol, respectively.
  • a compound (EI) was obtained in the same manner as the compound (DI) except that 2- (p-aminophenyl)propanol was changed to 2-(2 ' ,6 ' -dimethyl-4' -aminophenyl)propanol.
  • a compound (FI) was obtained in the same manner as the compound (DI) except that p- (bromomethyl)styrene was changed to 3 ' -bromo-4-propylstyrene.
  • a compound (GI) was obtained in the same manner as the compound (AI) except that 6- (p-aminophenyl)hexanol was changed to 8-(p-aminophenyl)octanol and 6- (p-bromophenyl)hexanol was changed to 8- (p-bromophenyl)octanol, respectively.
  • a compound (HI) was obtained in the same manner as the compound (AI) except that 6-(p-aminophenyl)hexanol was changed to 8-(p-aminophenyl)octanol.
  • a compound (II) was obtained in the same manner as the compound (AI) except that 6-(p-aminophenyl)hexanol was changed to 1- (p-aminophenyl)methanol and 6-(p-bromophenyl)hexanol was changed to 1-(p-bromophenyl)methanol, respectively.
  • a compound (All) was obtained in the same manner as the compound (AI) except that 4,4 ' -diiodobiphenyl was changed to 2,5-bis(4-iodophenyl) -thiophene.
  • a compound (BII) was obtained in the same manner as the compound (All) except that 2,5-bis(4-iodophenyl) -thiophene was changed to 2,5-bis(2-methyl-4-iodophenyl) -thiophene.
  • a compound (CII) was obtained in the same manner as the compound (All) except that p-(bromomethyl)styrene was changed to 2 ' -bromo-4-ethylstyrene.
  • a compound (DII) was obtained in the same manner as the compound (All) except that 6-(p-aminophenyl)hexanol was changed to 2- (p-aminophenyl)propanol and 6-(p-bromophenyl)hexanol was changed to 2- (p-bromophenyl)propanol, respectively.
  • a compound (EII) was obtained in the same manner as the compound (DII) except that 2-(p-aminophenyl)propanol was changed to 2-(2 ' ,6 ' -dimethyl-4 ' -aminophenyl)propanol.
  • a compound (FII) was obtained in the same manner as the compound (DII) except that p-(bromomethyl)styrene was changed to 3 ' -bromo-4-propylstyrene.
  • a compound (GII) was obtained in the same manner as the compound (All) except that 6-(p-aminophenyl)hexanol was changed to 8-(p-aminophenyl)octanol and 6-(p-bromophenyl)hexanol was changed to 8- (p-bromophenyl)octanol, respectively.
  • a compound (HII) was obtained in the same manner as the compound (All) except that 6-(p-aminophenyl)hexanol was changed to 8-(p-aminophenyl)octanol.
  • a compound (III) was obtained in the same manner as the compound (All) except that 6-(p-aminophenyl)hexanol was changed to 1-(p-aminophenyl)methanol and 6-(p-bromophenyl)hexanol was changed to 1-(p-bromophenyl)methanol, respectively.
  • a compound (KII) was obtained in the same manner as the compound (All) except that 2,5-bis(4-iodophenyl) -thiophene was changed to 3, 5-diiodo-l,2,4-triazole.
  • a compound (LII) was obtained _ ⁇ n the same manner as the compound (All) except that 2, 5-bis (4-iodophenyl) -thiophene was changed to 2,5-bis(4-iodophenyl ) -1,3,4-oxadiazole.
  • a compound (Mil) was obtained in the same manner as the compound (All) except that 2,5-bis(4-iodophenyl) -thiophene was changed to 3,3' -diiodo-1,1 ' -biisobenzothiophene.
  • a compound (Nil) was obtained in the same manner as the compound (Mil) except that p-(bromomethyl) styrene was changed to 2'-bromo-4-ethylstyrene.
  • a compound (Oil) was obtained in the same manner as the compound (Mil) except that 6-(p-aminophenyl)hexanol was changed to 2- (p-aminophenyl)propanol and 6- (p-bromophenyl)hexanol was changed to 2- (p-bromophenyl)propanol, respectively.
  • a compound (PII) was obtained in the same manner as the compound (Oil) except that p-(bromomethyl)styrene was changed to 3' -bromo-4-propylstyrene.
  • a compound (QII) was obtained in the same manner as the compound (Mil) except that 6-(p-aminophenyl)hexanol was changed to 8- (p-aminophenyl)octanol and 6- (p-bromophenyl)hexanol was changed to 8- (p-bromophenyl)octanol, respectively.
  • a compound (RII) was obtained in the same manner as the compound (Mil) except that 6-(p-aminophenyl)hexanol was changed to 8- (p-aminophenyl)octanol.
  • a compound (SII) was obtained in the same manner as the compound (Mil) except that 6-(p-aminophenyl)hexanol was changed to 1-(p-aminophenyl)methanol and 6-(p-bromophenyl)hexanol was changed to 1-(p-bromophenyl)methanol, respectively.
  • a compound (TII) was obtained in the same manner as the compound (All) except that 2,5-bis(4-iodophenyl) -thiophene was changed to
  • a compound (UII) was obtained in the same manner as the compound (All) except that 2,5-bis(4-iodophenyl) -thiophene was changed to 5, 5' ' -diiodo-2,2' :5 ' ,2 ' ' -ter-selenophene.
  • a compound (VII) was obtained in the same manner as the compound (All) except that 2,5-bis(4-iodophenyl) -thiophene was changed to
  • the obtained compound was found to be the following compound (WII) by means of a mass spectrum (MS) method, a 1 H-nuclear magnetic resonance ( 1 H-NMR) spectrum method, a 13 C-nuclear magnetic resonance ( 13 C-NMR) spectrum method, and a Fourier transform infrared absorption (FT-IR) spectrum method.
  • MS mass spectrum
  • 1 H-NMR 1 H-nuclear magnetic resonance
  • 13 C-NMR 13 C-nuclear magnetic resonance
  • FT-IR Fourier transform infrared absorption
  • a compound (YII) was obtained in the same manner as the compound (WII) except that 2, 5-bis ( 4-iodophenyl) -thiophene was changed to 3, 5-diiodo-l,2,4-tri_azole.
  • Example IA preparation of hole transport material>
  • the compound (AI) was used as an arylamine derivative, and the compound (AI) and a photo-radical polymerization initiator ("IRGACURE 651" produced by Nagase & Co., Ltd.) in a weight ratio of 95:5 were mixed with dichloroethane to obtain ahole transport material (that is, a composition for conductive materials) .
  • an ITO electrode that is, an anode
  • a transparent glass substrate having an average thickness of 0.5 mmbyvacuumevaporation so as tohave an average thickness of 100 nm.
  • the hole transport material was applied onto the ITO electrode by a spin coating method, and was then dried.
  • the hole transport material was irradiated with ultraviolet rays having a wavelength of 185 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 3 mW/cm 2 for 400 seconds in the dry atmosphere to polymerize the compound (AI) , so that a hole transport layer having an average thickness of 50 nm was formed.
  • a mercury lamp "UM-452", USHIO Inc.
  • an electron transport layer having an average thickness of 20 nm was formed on the light emitting layer by a vacuum evaporation of 3,4,5-triphenyl-l,2,4-triazole.
  • an AlLi electrode that is, a cathode
  • an AlLi electrode that is, a cathode
  • a protection cover made of polycarbonate was provided so as to cover these layers described above, and was then secured and sealed with an ultraviolet curable resin to obtain an organic EL device.
  • Organic EL devices were manufactured in the same manner as in Example IA except that the hole transport material prepared in the step 2A was used and the irradiation of ultraviolet rays from the mercury lamp was omitted.
  • the compound (XII) was dispersed in water to prepare a
  • Organic EL devices were manufactured in the same manner as in Comparative Example IA except that the hole transport material was changed to the hole transport material prepared in this Comparative Example 2A.
  • Organic EL devices were manufactured in the same manner as in Comparative Example IA except that the hole transport material was changed to the hole transport material prepared in this Comparative Example 3A.
  • Organic EL devices were manufactured after a hole transport material was prepared in the same manner as in Example IA except that the compound (II) was used as an arylamine derivative.
  • the compound (AI) was used as an arylamine derivative, polyethyleneglycol di(meth)acrylate represented by the above-mentioned general formula (El) (where n 12 is 9 and each of two A 1 S is a hydrogen bond) (hereinafter, this compound will be referred to as "cross-linking agent El") was used as a vinyl compound, and a photo-radical polymerization initiator ( 11 IRGACURE 651" produced by Nagase & Co., Ltd.) was used as a photopolymerization initiator, and then they were dissolved with dichloroethane to obtain a hole transport material (that is, a composition for conductive materials).
  • a photo-radical polymerization initiator 11 IRGACURE 651" produced by Nagase & Co., Ltd.
  • the mixing ratio of the compound (AI) and the cross-linking agent El was 3:1 in a mole ratio, and the weight ratio of the total weight of the compound (AI) and the cross-linking agent El with respect to the photo-radical polymerization initiator was 19:1.
  • an ITO electrode that is, an anodes
  • a transparent glass substrate having an average thickness of 100 nm in the same manner as the step IA described above.
  • the prepared hole transport materia.1 was applied onto the ITO electrode by a spin coating methocu, and was then dried.
  • the hole transport material was irradiatecl with ultraviolet rays having a wavelength of 185 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 2 mW/cm 2 for 300 seconds in the dry atmosphere to polymerize the compound (AI) and the cross-linking agent El, so that a hole transport layer having an average thickness of 50 nm was formed.
  • a mercury lamp "UM-452", USHIO Inc.
  • a light emitting layer having an average thickness of 50 nm was formed on the hole transport layer in the same manner as the step 3A described above.
  • an AlLi electrode that is, a cathode having an average thickness of 300 nm was formed on the electron transport layer in the same manner as the step 5A described above.
  • a protection cover made of polycarbonate was provided so as to cover these layers described above, and was then secured and sealed in the same manner as the step 6A described above to obtain an organic EL device.
  • Comparative Example 4B Organic EL devices were manufactured in the same manner i as in Comparative Example 4A.
  • Organic EL devices and conductive layers were manufactured after a hole transport material was prepared in the same manner as in Example IB except that the compound (AI) was used as an arylamine derivative.
  • Example 1C preparation of hole transport material>
  • the compound (All) was used as an arylamine derivative, and the compound (All) and a photo-radical polymerization initiator ("IRGACURE 651" produced by Nagase & Co., Ltd.) in a weight ratio of 95:5 were mixed with dichloroethane to obtain ahole transport material (that is, a composition for conductive materials) .
  • An electron transport material (that is, a composition for conductive materials) was obtained in the same manner as the hole transport material prepared in this example except that the compound (KII) was used as an arylamine derivative.
  • an ITO electrode that is, an anode
  • a transparent glass substrate having an average thickness of 100 nm in the same manner as the step IA described above.
  • the prepared hole transport material was i applied onto the ITO electrode by a spin coating method, and was then dried.
  • the hole transport material was irradiated with ultraviolet rays having a wavelength of 185 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 3 mW/ ⁇ m 2 for 400 seconds in the dry atmosphere to polymerize the compound (All) , so that a hole transport layer having an average thickness of 50 nm was formed.
  • a mercury lamp "UM-452", USHIO Inc.
  • a light emitting layer having an average thickness of 50 nm was formed on the hole transport layer in the same manner as the step 3A described above.
  • an electron transport layer having an average thickness of 20 nm was formed on the light emitting layer by the polymerization of the compound (KII) in the same manner as the step 2C described above except that the prepared electron transport material was used instead of the hole transport material.
  • an AlLi electrode that is, a cathode having an average thickness of 300 nm was formed on the electron transport layer in the same manner as the step 5A described above.
  • Organic EL devices were manufactured in the same manner as in Example 1C except that a hole transport layer was formed using the prepared hole transport material but omitting the irradiation of ultraviolet rays at the step 2C and that an electron transport layer was formed using the compound (YII) by vacuum evaporation at the step 4C.
  • the compound (XII) was dispersed in water to prepare a
  • Organic EL devices were manufactured in the same manner as in Comparative Example 1C except that the hole transport material was changed to the hole transport material prepared in this Comparative Example.
  • Organic EL devices were manufactured in the same manner as in Comparative Example 1C except that the hole transport material was changed to the hole transport material prepared in the above-mentioned step 2C and that an electron transport layer was formed using the compound (YII) by vacuum evaporation in the step 4C.
  • Organic EL devices were manufactured in the same manner as in Comparative Example 1C except that the hole transport material was changed to the hole transport material prepasred in the above-mentioned step 2C and that an electron transport layer was formed using the compound (YII) by vacuum evaporation in the step 4C.
  • Example ID preparation of hole transport material>
  • the compound (All) was used as an arylamine derivatrve, the cross-linking agent El was used as a vinyl compound an ⁇ a a photo-radical polymerization initiator ("IRGACURE 651" produced by Nagase & Co., Ltd.) was used as a photopolimerization initiator, respectively, and then ttiey were mixed with dichloroethane to obtain a hole transport material (that is, a composition for conductive materials).
  • IRGACURE 651 produced by Nagase & Co., Ltd.
  • the mixing ra-fcio of the compound (All) and the cross-linking agent El was 3:1 in a mole ratio, and the weight ratio of the total weight of the compound (All) and the cross-linking agent El with respect to the photo-radical polymerization initiator was 19:1.
  • An electron transport material (that is, a composition for conductive materials) was obtained in the same manner as thehole transport material preparedin this Example except that the compound (KII) was used as an arylamine derivative.
  • an ITO electrode that is, an anode having an average thickness of 100 nm was formed on a transparent glass substrate in the same manner as the step IA described above.
  • the hole transport material was applied onto the ITO electrode by a spin coating method, and was then dried.
  • the hole transport material was irradiated with ultraviolet rays having a wavelength of 185 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 2 mW/cm 2 for 300 seconds in the dry atmosphere to polymerize the compound (All) and the cross-linking agent El, so that a hole transport layer having an average thickness of 50 nm was formed.
  • a mercury lamp "UM-452", USHIO Inc.
  • a light emitting layer having an average thickness of 50 nm was formed on the hole transport layer in the same manner as the step 3A described above.
  • an electron transport layer having an average thickness of 20 nm was formed on the light emitting layer by polymerizing the compound (KII) and the cross-linking agent El in the same manner as the step 2D described above except that the prepared electron transport material was used instead of
  • an AlLi electrode that is, a cathode
  • an AlLi electrode that is, a cathode
  • a protection cover made of polycarbonate was provided so as to cover these layers described above, and was then secured and sealed with an ultraviolet curable resin to obtain an organic EL device.
  • Organic EL devices were manufactured after a hole transport material and an electron transport material were prepared in the same manner as in Example ID except that the cross-linking agent E2 was uses as a vinyl compound.
  • organic EL devices were manufactured after a hole transport material and an electron transport material were prepared in the same manner as in Example 6D except that the mixing ratio (mole ratio) of the compound (All) and the cross-linking agent E2 was changed to those shown in Table 2.
  • Organic EL devices were manufactured in the same manner as Comparative Example 2C. (Comparative Examples 3D and 4D) i
  • organic EL devices were manufactured after a hole transport material and an electron transport material were prepared in the same manner as in Example ID except that as for the arylamine derivatives for use in the hole transport material and the electron transport material, those shown in Table 4 (Table 4B) are used, respectively.
  • the luminous brightness (cd/m 2 ), the maximum luminous efficiency (lm/W) , and the time that elapsedbefore the luminous brightness became half of the initial value (that is, a half-life) of each of the organic EL devices obtained in the Examples and Comparative Examples mentioned above weremeasured. Based on the measurement values for the five organic EL devices, an average was calculated.
  • the luminous brightness was measured by applying a voltage of 6V across the ITO electrode and the AlLi electrode.
  • the measurement values (that is, the luminous brightness, the maximum luminous efficiency, and the half-life) of each of the Examples IA to 8A and the Comparative Examples 2A to 4A were evaluated based on the measurement values of the Comparative Example IA according to the following four criteria, respectively.
  • the organic EL devices of the Examples which were formed of the compositions each having the adjacent main skeletons which are allowed to exist i at a more suitable interval, the luminous brightness and the maximum luminous efficiency were further improved and the half-life was also further prolonged.
  • the measurement values (that is, the luminous brightness, the maximum luminous efficiency, and the half-life) of each of the Examples IB to 17B, the Examples IB 1 to 8B' and the Comparative Examples 2B to 5B were evaluated based on the measurement values of the Comparative Example IB according to the following four criteria, respectively.
  • each of the organic EL devices of the Examples IB to 17B shows a tendency that the maximum luminous efficiency was improved as compared to the organic EL devices of the Examples IB' to 8B f .
  • Such a result suggests that in the organic EL devices of the Examples IB to 16B the interval between the adjacent main skeletons could be maintained at a more suitable distance due to the addition of the vinyl compound.
  • the organic EL devices of the Examples IB, 2B, 3B, 6B, 7B and 8B which were formed from the hole transport material in which the compound represented by the above-mentioned general formula (Al) and the vinyl compound were mixed with a particularly preferable mixing ratio show a tendency that the luminous brightness and the maximum luminous efficiency were further improved and the half-life was also further prolonged as compared to the organic EL devices of the Examples 4B, 5B, 9B and 1OB.
  • compositions of the Examples whichwere formed j of the compounds having the substituents X each having an appropriate n 1 value in the general formula (A2) that is the compositions formed of the compounds having the substituents X by which the adjacent main skeletons are allowed to exist at a suitable interval, could have more superior luminous brightness, maximum luminous efficiency, and half-life as compared to the compositions which do not have such a substituent X.
  • Themeasurement values (that is, the luminous brightness, the maximum luminous efficiency, and the half-life) of each of the Examples 1C to 16C and the Comparative Examples 2C to 4C were evaluated based on the measurement values of the Comparative Example 1C according to the following four criteria, respectively.
  • compositions of the Examples whichwere formed of the compounds having the substituents X each having an appropriate n 1 value in the general formula (A2) that is the compositions which were formed of the compounds having the substituents X by which the adjacent main skeletons are allowed to exist at a suitable interval, could have more superior luminous brightness, maximum luminous efficiency, and half-life as compared with the compositions which do not have such a substituent X.
  • the organic EL devices in the Examples each obtained by appropriately selecting conductive materials for respectively constituting the hole transport material and the electron transport material, namely, the organic EL devices in j the Examples each having a preferred combination of the hole transport layer and the electron transport layer by appropriately selecting the group Y of the compound represented by the above-mentioned general formula (Al) could have superior luminous brightness, maximum luminous efficiency, and half-life.
  • the measurement values (that is, the luminous brightness, the maximum luminous efficiency, and the half-life) of each of the Examples ID to 25D, the Examples ID 1 to 16D' and the Comparative Examples 2D to 4D were evaluated based on the measurement values of the Comparative Example ID according to the following four criteria, respectively.
  • each of the organic EL devices of the Examples ID to 25D shows a tendency that the maximum luminous efficiency was improved as compared to the organic EL devices of the Examples ID' to 16D 1 .
  • Such a tendency was recognized more conspicuously as the organic EL devices which were formed of the hole transport materials each having a particularly preferable mixing ratio of the compound represented by the general formula (Al) and the vinyl compound. This result suggests that the interval between the adjacent main skeletons could be maintained at a more suitable interval due to the addition of the vinyl compound.
  • compositions of the Examples which have substituents Xeachhaving an appropriate n 1 value in the general formula (A2) that is the compositions having the substituents X by which the adjacent main skeletons are allowed to exist a ⁇ t k a suitable interval, could have more superior luminous brightness, maximum luminous efficiency, and half-life as compared to the compositions which do not have such a substituent X.
  • the organic EL devices in the Examples eacti obtained by appropriately selecting conductive materials four respectively constituting the hole transport material and the electron transport material, namely, the organic EL devices in the Examples each having a preferred combination of the hole transport layer and the electron transport layer b ⁇ appropriately selecting the group Y of the compound represented! by the above-mentioned general formula (Al) could have superior: luminous brightness, maximum luminous efficiency, and half-life.
  • Example IE preparation of organic semiconductor material>
  • the compound (Mil) was used as an arylamine derivative, and the compound (Mil) and a photo-radical polymerization initiator ("IRGACURE 651" produced by Nagase & Co., Ltd.) ' in a weight ratio of 95:5 were mixed with dichloroethane to obtain an organic semiconductor material (that is, a composition f ⁇ -tr conductive materials).
  • IRGACURE 651 produced by Nagase & Co., Ltd.
  • a glass substrate having an average thickness of 1 mm was prepared, and it was then washedwith water (that is, with a cleaning fluid).
  • a photoresist was applied onto the glass substrate by a spin coating method, and then the photoresist was prebaked to form a film.
  • the film was irradiated with (or exposed to) ultraviolet rays through a photomask to develop it - In this way, a resist layer having openings where a source electrode and a drain electrode were to be provided was formed.
  • an aqueous gold colloidal solution was supplied to the openings by an inkjet method. Then, the glass substrate to which the aqueous gold colloidal solution had been supplied was dried by heating to obtain a source electrode and a drain electrode.
  • the resist layer was removed by oxygen plasma treatment. Then, the glass substrate on which tlie source electrode and the drain electrode had been formed was washed with water, and was then washed with methanol.
  • the prepared organic semiconductor material was applied onto the substrate by a spin coating method and then it was dried. Then, the organic semiconductor material was irradiated j with ultraviolet rays having a wavelength of 185 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 3 mW/cm 2 for 400 seconds in the dry atmosphere to polymerize the compound (Mil) , so that an organic semiconductor layer having an average thickness of 50 nm was formed.
  • UM-452 ultraviolet rays having a wavelength of 185 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 3 mW/cm 2 for 400 seconds in the dry atmosphere to polymerize the compound (Mil) , so that an organic semiconductor layer having an average thickness of 50 nm was formed.
  • a xylene solution of polymethylmethacrylate (PMMA) was applied onto the organic semiconductor layer by a spin coatingmethod, andwas then dried to form a gate insulating layer having an average thickness of 500 nm.
  • a water dispersion of polyethylenedioxythiophene was applied to an area on the gate insulating layer corresponding to the area between the source electrode and the drain electrode by an inkjet method, and was then dried to form a gate electrode having an average thickness of 100 nm.
  • organic TFTs were manufactured after the organic semiconductor material was prepared in the same manner as in Example IE except that as for an arylamine derivative for use in preparing the organic semiconductor material, those shown in Table 5 were used.
  • the compound (WII) was dissolved in dichloroethane to prepare an organic semiconductor material.
  • Organic TFTs were manufactured in the same manner as in Example IE except that the organic semiconductor material was changed to the organic semiconductor material prepared in the step 4E and the organic semiconductor material was not irradiatedwith ultraviolet rays from amercury lamp in the step 4E.
  • the compound (WII) was used as an arylamine derivative, and a polyester acrylate compound ("ARONIX M-8030" produced by TOAGOSEI Co. , Ltd. ) was used as a photocrosslinking agent, and the compound (WII), the polyester acrylate compound and a photo-radical polymerization initiator ("IRGACURE 651" produced by Nagase & Co., Ltd.) in a weight ratio of 30:65:5 were mixed with dichloroethane to obtain an organic semiconductor material.
  • a polyester acrylate compound ("ARONIX M-8030" produced by TOAGOSEI Co. , Ltd. ) was used as a photocrosslinking agent
  • the compound (WII), the polyester acrylate compound and a photo-radical polymerization initiator (“IRGACURE 651" produced by Nagase & Co., Ltd.) in a weight ratio of 30:65:5 were mixed with dichloroethane to obtain an organic semiconductor material.
  • Organic TFTs were manufactured in the same manner as in Example IE except that the organic semiconductor material prepared in this Comparative Example was used as the organic semiconductor material.
  • the mixing ratio of the compound (Mil) and the cross-linking agent El was 3:1 in a molar ratio, and the weight ratio of the total weight of the compound (Mil) and the cross-linking agent El with respect to the photo-radical polymerization initiator was 19:1.
  • a resist layer having openings where a source electrode and a drain electrode were to be provided was formed on a glass substrate.
  • the prepared organic semiconductor material was applied onto the substrate bya spin coatingmethodand then itwas dried.
  • the organic semiconductor material was irradiated with ultraviolet rays having a wavelength of 185 nm from a mercury lamp ("UM-452", USHIO Inc.) through a filter at an intensity of irradiation of 2 mW/cm 2 for 300 seconds in the dry atmosphere to polymerize the compound (Mil) and the cross-linking agent El, so that an organic semiconductor layer having an average thickness of 50 nm was formed.
  • a mercury lamp "UM-452", USHIO Inc.
  • a gate insulating layer having an average thickness of 500 nm was formed on the organic semiconductor layer.
  • a gate electrode having an average thickness of 100 nm was formed on an area on the gate insulating layer corresponding to the area between the source electrode and the drain electrode.
  • Example 2F to 5F organic TFTs were i manufactured after the organic semiconductor material was prepared in the same manner as in Example IF except that the mixing ratio (mole ratio) of the compound (Mil) and the cross-linking agent El were changed to those shown in Table 6 were used.
  • Organic TFTs were manufactured after the organic semiconductor material was prepared in the same manner as in Example IF except that the cross-linking agent E2 was used as a vinyl compound.
  • organic TFTs were manufactured after the organic semiconductor material was prepared in the same manner as in Example 6F except that the mixing ratio (mole ratio) of the compound (Mil) and the cross-linking agent E2 were changed to those shown in Table 6.
  • organic TFTs were manufactured after the organic semiconductor material was prepared in the same manner as in Example IF except that as for an arylamine derivative for use in preparing the organic semiconductor material, those shown in Table 6 were used.
  • the word “OFF-state current” means the value of current flowing between the source electrode and the drain electrode when a gate voltage is not applied
  • the word “ON-state current” means the value of current flowing between the source electrode and the drain electrode when a gate voltage is applied. Therefore, a larger value of ratio of the absolute value i of the ON-state current to the absolute value of the OFF-state current (hereinafter, simply referred to as a "value of ON/OFF ratio”) means that an organic TFT has better characteristics.
  • the OFF-state current was measured at a potential difference between the source electrode and the drain electrode of 30 V
  • the ON-state current was measured at a potential difference between the source electrode and the drain electrode of 30 V and an absolute value of gate voltage of 40 V.
  • A The value of ON/OFF ratio was 10 4 or more.
  • compositions of Examples which were formed of the compounds having the substituents X each having an appropriate n 1 value in the general formula (A2) that is the compositions formed of the compounds having the substituents X by which the adjacent main skeletons are allowed to exist at a suitable interval, could have more increased value of ON/OFF ratio, that is, the characteristics of the organic TFT were further improved.
  • the polymer contained in the conductive material has a structure in which main skeletons of compounds are repeatedly linked through a chemical structure which is produced by the direct polymerization reaction between any one or more of the respective substituents X 1 , X 2 , X 3 and X 4 of the compounds or a chemical structure which is produced by the polymerization reaction between the respective substituents X of the compounds via avinyl compound, that is, a structure in which main skeletons exist at a suitable interval repeatedly. Therefore, it is possible to decrease the j interaction between the adjacent main skeletons ⁇ _n the polymer.
  • the constituent material of -the conductive layer when an upper layer is formed on the conductive layer using a liquid material, it i_s possible to appropriately suppress or prevent the polymer from being swelled or dissolved by the solvent or dispersion medium contained in the liquid material. As a result, it is possible to prevent mutual dissolution from occurring between the conductive layer and the upper layer to be formed.
  • the polymer can exhibit a high carrier transport ability, and thus a conductive material constituted from the polymer as its main material can also have a high carrier transport ability. Consequently, both an electronic device provided with such a conductive layer and electronic equipment provided such an electronic device can have higti reliability. Therefore, the present invention has industrial adaptability required by PCT.
PCT/JP2005/019440 2004-10-18 2005-10-17 Composition for conductive materials, conductive material, conductive layer, electronic device, and electronic equipment WO2006043681A1 (en)

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WO2011062802A1 (en) * 2009-11-17 2011-05-26 General Electric Company Method for making material useful in optoelectronic device, the material and the optoelectronic device
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