WO2006036582A1 - High output small area group iii nitride leds - Google Patents
High output small area group iii nitride leds Download PDFInfo
- Publication number
- WO2006036582A1 WO2006036582A1 PCT/US2005/033013 US2005033013W WO2006036582A1 WO 2006036582 A1 WO2006036582 A1 WO 2006036582A1 US 2005033013 W US2005033013 W US 2005033013W WO 2006036582 A1 WO2006036582 A1 WO 2006036582A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- emitting diode
- diode according
- radiant flux
- milliwatts
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05812300.1A EP1792353B1 (en) | 2004-09-22 | 2005-09-15 | High output small area group iii nitride leds |
JP2007533549A JP2008514030A (en) | 2004-09-22 | 2005-09-15 | High power small area III-nitride LED |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/951,042 | 2004-09-22 | ||
US10/951,042 US7259402B2 (en) | 2004-09-22 | 2004-09-22 | High efficiency group III nitride-silicon carbide light emitting diode |
US11/037,965 | 2005-01-18 | ||
US11/037,965 US8513686B2 (en) | 2004-09-22 | 2005-01-18 | High output small area group III nitride LEDs |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006036582A1 true WO2006036582A1 (en) | 2006-04-06 |
Family
ID=35601712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2005/033013 WO2006036582A1 (en) | 2004-09-22 | 2005-09-15 | High output small area group iii nitride leds |
Country Status (6)
Country | Link |
---|---|
US (1) | US8513686B2 (en) |
EP (1) | EP1792353B1 (en) |
JP (1) | JP2008514030A (en) |
KR (2) | KR20070046182A (en) |
TW (1) | TWI312584B (en) |
WO (1) | WO2006036582A1 (en) |
Cited By (8)
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US8487337B2 (en) | 2006-04-24 | 2013-07-16 | Cree, Inc. | Side view surface mount LED |
US8617909B2 (en) | 2004-07-02 | 2013-12-31 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
US8858004B2 (en) | 2005-12-22 | 2014-10-14 | Cree, Inc. | Lighting device |
US8901585B2 (en) | 2003-05-01 | 2014-12-02 | Cree, Inc. | Multiple component solid state white light |
US9252331B2 (en) | 2007-09-28 | 2016-02-02 | Osram Opto Semiconductors Gmbh | Thin-film LED having a mirror layer and method for the production thereof |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US9666772B2 (en) | 2003-04-30 | 2017-05-30 | Cree, Inc. | High powered light emitter packages with compact optics |
US10615324B2 (en) | 2013-06-14 | 2020-04-07 | Cree Huizhou Solid State Lighting Company Limited | Tiny 6 pin side view surface mount LED |
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US7915085B2 (en) | 2003-09-18 | 2011-03-29 | Cree, Inc. | Molded chip fabrication method |
US7842527B2 (en) * | 2006-12-11 | 2010-11-30 | The Regents Of The University Of California | Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices |
JP2009509339A (en) * | 2005-09-16 | 2009-03-05 | クリー インコーポレイテッド | Method for processing a semiconductor wafer having a silicon carbide power device |
US7846391B2 (en) * | 2006-05-22 | 2010-12-07 | Lumencor, Inc. | Bioanalytical instrumentation using a light source subsystem |
US7910945B2 (en) * | 2006-06-30 | 2011-03-22 | Cree, Inc. | Nickel tin bonding system with barrier layer for semiconductor wafers and devices |
US8643195B2 (en) | 2006-06-30 | 2014-02-04 | Cree, Inc. | Nickel tin bonding system for semiconductor wafers and devices |
US20080042145A1 (en) * | 2006-08-18 | 2008-02-21 | Helmut Hagleitner | Diffusion barrier for light emitting diodes |
US7910938B2 (en) * | 2006-09-01 | 2011-03-22 | Cree, Inc. | Encapsulant profile for light emitting diodes |
US8425271B2 (en) | 2006-09-01 | 2013-04-23 | Cree, Inc. | Phosphor position in light emitting diodes |
US7855459B2 (en) | 2006-09-22 | 2010-12-21 | Cree, Inc. | Modified gold-tin system with increased melting temperature for wafer bonding |
US9178121B2 (en) * | 2006-12-15 | 2015-11-03 | Cree, Inc. | Reflective mounting substrates for light emitting diodes |
US9024349B2 (en) | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US9159888B2 (en) * | 2007-01-22 | 2015-10-13 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
US7709811B2 (en) * | 2007-07-03 | 2010-05-04 | Conner Arlie R | Light emitting diode illumination system |
US8098375B2 (en) | 2007-08-06 | 2012-01-17 | Lumencor, Inc. | Light emitting diode illumination system |
US9041285B2 (en) | 2007-12-14 | 2015-05-26 | Cree, Inc. | Phosphor distribution in LED lamps using centrifugal force |
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US10546846B2 (en) | 2010-07-23 | 2020-01-28 | Cree, Inc. | Light transmission control for masking appearance of solid state light sources |
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US8466436B2 (en) | 2011-01-14 | 2013-06-18 | Lumencor, Inc. | System and method for metered dosage illumination in a bioanalysis or other system |
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US9166126B2 (en) | 2011-01-31 | 2015-10-20 | Cree, Inc. | Conformally coated light emitting devices and methods for providing the same |
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US11769768B2 (en) | 2020-06-01 | 2023-09-26 | Wolfspeed, Inc. | Methods for pillar connection on frontside and passive device integration on backside of die |
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US20230078017A1 (en) | 2021-09-16 | 2023-03-16 | Wolfspeed, Inc. | Semiconductor device incorporating a substrate recess |
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US6610551B1 (en) * | 1998-09-16 | 2003-08-26 | Cree, Inc. | Vertical geometry InGaN LED |
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- 2005-09-15 WO PCT/US2005/033013 patent/WO2006036582A1/en active Application Filing
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9666772B2 (en) | 2003-04-30 | 2017-05-30 | Cree, Inc. | High powered light emitter packages with compact optics |
US8901585B2 (en) | 2003-05-01 | 2014-12-02 | Cree, Inc. | Multiple component solid state white light |
US8617909B2 (en) | 2004-07-02 | 2013-12-31 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
US8858004B2 (en) | 2005-12-22 | 2014-10-14 | Cree, Inc. | Lighting device |
US8487337B2 (en) | 2006-04-24 | 2013-07-16 | Cree, Inc. | Side view surface mount LED |
US9252331B2 (en) | 2007-09-28 | 2016-02-02 | Osram Opto Semiconductors Gmbh | Thin-film LED having a mirror layer and method for the production thereof |
US9431589B2 (en) | 2007-12-14 | 2016-08-30 | Cree, Inc. | Textured encapsulant surface in LED packages |
US10615324B2 (en) | 2013-06-14 | 2020-04-07 | Cree Huizhou Solid State Lighting Company Limited | Tiny 6 pin side view surface mount LED |
Also Published As
Publication number | Publication date |
---|---|
KR20070046182A (en) | 2007-05-02 |
EP1792353B1 (en) | 2020-03-11 |
TWI312584B (en) | 2009-07-21 |
TW200625690A (en) | 2006-07-16 |
US8513686B2 (en) | 2013-08-20 |
KR20090099593A (en) | 2009-09-22 |
EP1792353A1 (en) | 2007-06-06 |
JP2008514030A (en) | 2008-05-01 |
US20060060879A1 (en) | 2006-03-23 |
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