WO2006030684A1 - 投影光学系、投影光学系の製造方法、露光装置及び露光方法 - Google Patents
投影光学系、投影光学系の製造方法、露光装置及び露光方法 Download PDFInfo
- Publication number
- WO2006030684A1 WO2006030684A1 PCT/JP2005/016496 JP2005016496W WO2006030684A1 WO 2006030684 A1 WO2006030684 A1 WO 2006030684A1 JP 2005016496 W JP2005016496 W JP 2005016496W WO 2006030684 A1 WO2006030684 A1 WO 2006030684A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- optical system
- projection optical
- cycles
- less
- spatial frequency
- Prior art date
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 224
- 238000000034 method Methods 0.000 title claims description 69
- 238000004519 manufacturing process Methods 0.000 title claims description 41
- 239000013078 crystal Substances 0.000 claims abstract description 53
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims abstract description 50
- 229910001634 calcium fluoride Inorganic materials 0.000 claims abstract description 50
- 230000004075 alteration Effects 0.000 claims description 44
- 238000009826 distribution Methods 0.000 claims description 13
- 238000001228 spectrum Methods 0.000 claims description 11
- 230000000737 periodic effect Effects 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 3
- 230000001131 transforming effect Effects 0.000 claims description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- 238000003682 fluorination reaction Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 7
- 238000005259 measurement Methods 0.000 description 29
- 239000000758 substrate Substances 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 18
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 238000000206 photolithography Methods 0.000 description 10
- 238000011156 evaluation Methods 0.000 description 8
- 238000005520 cutting process Methods 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- 238000005498 polishing Methods 0.000 description 7
- 238000004364 calculation method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000012937 correction Methods 0.000 description 5
- 238000007654 immersion Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 210000004027 cell Anatomy 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 210000002858 crystal cell Anatomy 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 206010010071 Coma Diseases 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012025 fluorinating agent Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- YAFKGUAJYKXPDI-UHFFFAOYSA-J lead tetrafluoride Chemical compound F[Pb](F)(F)F YAFKGUAJYKXPDI-UHFFFAOYSA-J 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 238000000233 ultraviolet lithography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/14—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation
- G02B13/143—Optical objectives specially designed for the purposes specified below for use with infrared or ultraviolet radiation for use with ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B13/00—Optical objectives specially designed for the purposes specified below
- G02B13/24—Optical objectives specially designed for the purposes specified below for reproducing or copying at short object distances
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Lenses (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP05778604A EP1801630A4 (en) | 2004-09-13 | 2005-09-08 | OPTICAL PROJECTION SYSTEM, METHOD FOR MANUFACTURING OPTICAL SYSTEM FOR PROJECTION EXPOSURE SYSTEM, AND EXPOSURE METHOD |
JP2006535809A JP4780412B2 (ja) | 2004-09-13 | 2005-09-08 | 投影光学系、投影光学系の製造方法、露光装置及び露光方法 |
US11/662,066 US7706074B2 (en) | 2004-09-13 | 2005-09-08 | Projection optical system, method of manufacturing projection optical system, exposure apparatus, and exposure method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004265674 | 2004-09-13 | ||
JP2004-265674 | 2004-09-13 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2006030684A1 true WO2006030684A1 (ja) | 2006-03-23 |
Family
ID=36059937
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2005/016496 WO2006030684A1 (ja) | 2004-09-13 | 2005-09-08 | 投影光学系、投影光学系の製造方法、露光装置及び露光方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7706074B2 (ja) |
EP (1) | EP1801630A4 (ja) |
JP (1) | JP4780412B2 (ja) |
KR (1) | KR20070043994A (ja) |
CN (1) | CN101002128A (ja) |
WO (1) | WO2006030684A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015145887A1 (ja) * | 2014-03-26 | 2015-10-01 | Hoya株式会社 | マスクブランク用基板、マスクブランク及び転写用マスク、並びにそれらの製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102099880B1 (ko) * | 2013-05-06 | 2020-04-10 | 삼성전자 주식회사 | 유효 열 전자 강화 유닛을 갖는 리소그래피 장치 및 패턴 형성 방법 |
MX2017012494A (es) * | 2015-04-02 | 2018-07-06 | Fluorsid S P A | FLUORITA SINTíTICA DE ALTA PUREZA, PROCESO PARA PREPARAR LA MISMA Y APARATO PARA LA MISMA. |
JP2019105561A (ja) * | 2017-12-13 | 2019-06-27 | 大塚電子株式会社 | 測定装置および、それに用いられるサンプルホルダ |
CN111175936A (zh) * | 2020-01-17 | 2020-05-19 | 厦门力鼎光电股份有限公司 | 一种光学成像镜头 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH085801A (ja) * | 1994-06-16 | 1996-01-12 | Nikon Corp | 光リソグラフィー用蛍石 |
WO2003007045A1 (fr) * | 2001-07-10 | 2003-01-23 | Nikon Corporation | Procede d'elaboration de systeme optique de projection |
JP2003161708A (ja) * | 2001-11-29 | 2003-06-06 | Nikon Corp | 光リソグラフィー用光学部材及びその評価方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5473410A (en) * | 1990-11-28 | 1995-12-05 | Nikon Corporation | Projection exposure apparatus |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP3369730B2 (ja) | 1994-06-16 | 2003-01-20 | 株式会社ニコン | 光リソグラフィー用光学部材の評価方法 |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
CN1144263C (zh) * | 1996-11-28 | 2004-03-31 | 株式会社尼康 | 曝光装置以及曝光方法 |
DE69735016T2 (de) * | 1996-12-24 | 2006-08-17 | Asml Netherlands B.V. | Lithographisches Gerät mit zwei Objekthaltern |
JP3747566B2 (ja) | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
US6208407B1 (en) * | 1997-12-22 | 2001-03-27 | Asm Lithography B.V. | Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement |
JP2000121491A (ja) | 1998-10-20 | 2000-04-28 | Nikon Corp | 光学系の評価方法 |
EP1102100A3 (de) * | 1999-11-12 | 2003-12-10 | Carl Zeiss | Katadioptrisches Objektiv mit physikalischem Strahlteiler |
EP1115019A3 (en) * | 1999-12-29 | 2004-07-28 | Carl Zeiss | Projection exposure lens with aspheric elements |
JP2001258131A (ja) | 2000-03-10 | 2001-09-21 | Yazaki Corp | グロメット |
JP2002244034A (ja) | 2001-02-21 | 2002-08-28 | Nikon Corp | 投影光学系および該投影光学系を備えた露光装置 |
TWI285299B (en) * | 2001-04-04 | 2007-08-11 | Asml Netherlands Bv | Lithographic manufacturing process, lithographic projection apparatus, and device manufactured thereby |
EP1413870A4 (en) * | 2001-07-05 | 2006-11-15 | Nikon Corp | OPTICAL ELEMENT FOR OPTICAL LITHOGRAPHY, AND RELATIVE EVALUATION METHOD |
US6788389B2 (en) * | 2001-07-10 | 2004-09-07 | Nikon Corporation | Production method of projection optical system |
JP2004006783A (ja) * | 2002-04-18 | 2004-01-08 | Nikon Corp | 投影光学系、露光装置、露光方法及びマイクロデバイスの製造方法 |
KR20040104691A (ko) | 2002-05-03 | 2004-12-10 | 칼 짜이스 에스엠테 아게 | 높은 개구를 갖는 투영 대물렌즈 |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
-
2005
- 2005-09-08 CN CNA200580027434XA patent/CN101002128A/zh active Pending
- 2005-09-08 US US11/662,066 patent/US7706074B2/en not_active Expired - Fee Related
- 2005-09-08 KR KR1020077002526A patent/KR20070043994A/ko not_active Application Discontinuation
- 2005-09-08 EP EP05778604A patent/EP1801630A4/en not_active Withdrawn
- 2005-09-08 JP JP2006535809A patent/JP4780412B2/ja not_active Expired - Fee Related
- 2005-09-08 WO PCT/JP2005/016496 patent/WO2006030684A1/ja active Application Filing
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH085801A (ja) * | 1994-06-16 | 1996-01-12 | Nikon Corp | 光リソグラフィー用蛍石 |
WO2003007045A1 (fr) * | 2001-07-10 | 2003-01-23 | Nikon Corporation | Procede d'elaboration de systeme optique de projection |
JP2003161708A (ja) * | 2001-11-29 | 2003-06-06 | Nikon Corp | 光リソグラフィー用光学部材及びその評価方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2015145887A1 (ja) * | 2014-03-26 | 2015-10-01 | Hoya株式会社 | マスクブランク用基板、マスクブランク及び転写用マスク、並びにそれらの製造方法 |
JP2015184622A (ja) * | 2014-03-26 | 2015-10-22 | Hoya株式会社 | マスクブランク用基板、マスクブランク及び転写用マスク、並びにそれらの製造方法 |
KR20170085602A (ko) * | 2014-03-26 | 2017-07-24 | 호야 가부시키가이샤 | 마스크 블랭크용 기판, 마스크 블랭크 및 전사용 마스크 |
US9778209B2 (en) | 2014-03-26 | 2017-10-03 | Hoya Corporation | Substrate for mask blanks, mask blank, transfer mask, and method of manufacturing them |
KR101929849B1 (ko) | 2014-03-26 | 2018-12-17 | 호야 가부시키가이샤 | 마스크 블랭크용 기판, 마스크 블랭크 및 전사용 마스크 |
Also Published As
Publication number | Publication date |
---|---|
EP1801630A1 (en) | 2007-06-27 |
KR20070043994A (ko) | 2007-04-26 |
JPWO2006030684A1 (ja) | 2008-05-15 |
US20080123086A1 (en) | 2008-05-29 |
CN101002128A (zh) | 2007-07-18 |
US7706074B2 (en) | 2010-04-27 |
JP4780412B2 (ja) | 2011-09-28 |
EP1801630A4 (en) | 2009-12-16 |
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