WO2006025433A1 - Matériau de transduction photoélectrique, appareil de transduction photoélectrique et procédé de fabrication de matériau de transduction photoélectrique - Google Patents

Matériau de transduction photoélectrique, appareil de transduction photoélectrique et procédé de fabrication de matériau de transduction photoélectrique Download PDF

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WO2006025433A1
WO2006025433A1 PCT/JP2005/015876 JP2005015876W WO2006025433A1 WO 2006025433 A1 WO2006025433 A1 WO 2006025433A1 JP 2005015876 W JP2005015876 W JP 2005015876W WO 2006025433 A1 WO2006025433 A1 WO 2006025433A1
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photoelectric conversion
fullerene
electron
encapsulated
fullerenes
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PCT/JP2005/015876
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English (en)
Japanese (ja)
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Yasuhiko Kasama
Kenji Omote
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Ideal Star Inc.
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Publication of WO2006025433A1 publication Critical patent/WO2006025433A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/211—Fullerenes, e.g. C60
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Photoelectric conversion material photoelectric conversion device, and method for manufacturing photoelectric conversion material
  • the present invention relates to a photoelectric conversion material made of an organic semiconductor and a photoelectric conversion device using the photoelectric conversion material.
  • Non-Patent Document 1 Fullerene Chemistry and Physics Nagoya University Press
  • Non-Patent Document 2 Current Status and Prospects of Organic Solar Cells p.425-428 Applied Physics No. 71 ⁇ No. 4 (200 2)
  • Solar cells are classified into an inorganic solar cell using an inorganic material such as a silicon semiconductor as a photoelectric conversion material and an organic solar cell using an organic material such as an organic semiconductor.
  • inorganic solar cells with high energy conversion efficiency have been mainly developed (conversion efficiency is about 25% for single crystal silicon and about 12% for amorphous silicon), but inorganic solar cells are made of materials. Is expensive, and the manufacturing process is complicated, so it is difficult to reduce costs, which has been a major obstacle to the spread of solar cells.
  • Gratzel-type dye-sensitized solar cells use an electrolytic solution containing iodine, and have many problems to be solved in terms of stability and durability.
  • An organic solar cell called an unction-type organic thin-film solar cell, has a simple structure in which a thin film made of a photoelectric conversion material consisting of a uniform mixture of electron donor and electron acceptor organic molecules is sandwiched between different electrodes. It is easy to fabricate, does not require high-temperature processes, has excellent stability and durability, and dislikes attention.
  • FIG. 6 is a cross-sectional view of a conventional bulk heterojunction type organic thin film solar cell.
  • the organic thin-film solar cell shown in FIG. 6 includes a glass substrate 101, a positive electrode 102 made of a transparent material such as ITO, a photoelectric conversion material film in which an electron-donating organic material 103 is doped with fullerene 105, A 1
  • the negative electrode 104 is made up of.
  • the fluorescence intensity due to light irradiation is remarkably attenuated and the photocurrent is enhanced.
  • the electrons excited in the conductive polymer by light irradiation are trapped by fullerene having a high electron affinity, so the probability of recombination with holes generated simultaneously with the electrons is reduced.
  • the generated electrons move between the fullerenes which are electron acceptors by hopping, and the generated holes move between the conductive polymers which are electron donors by hopping.
  • the lifetime of electrons and holes, which are photoconductive carriers, is increased, so that the photocurrent increases.
  • the present invention (1) is a photoconductivity enhancer that also has the power of endohedral fullerenes.
  • the atoms encapsulated in the atom-encapsulated fullerenes are alkali metals.
  • the photoconductivity enhancer of the invention (1).
  • the atom encapsulated in the atom-encapsulated fullerene is Li.
  • the fullerene is C 1, C 2 or a mixed fullerene thereof.
  • the present invention (5) is a photoelectric conversion material comprising the photoconductivity enhancer of the above inventions (1) to (4).
  • the present invention (6) is the photoelectric conversion material according to the invention (5) comprising at least the above-described photoconductivity enhancer and an electron donating organic material.
  • the present invention (7) is a photoelectric conversion device comprising at least a substrate, the photoelectric conversion material of the invention (5), and an electrode.
  • the present invention (8) is the photoelectric conversion device of the invention (7), wherein the photoelectric conversion device is a photovoltaic cell or a photosensor.
  • the present invention (9) is a step of mixing and stirring a solution obtained by dissolving the photoconductivity enhancer according to the invention (1) to the invention (4) and a solution obtained by dissolving an electron donating organic material.
  • a method for producing a photoelectric conversion material comprising
  • a photoelectric conversion material composed of an electron acceptor made of an endohedral fullerene and an electron donor made of an electron-donating organic material comprises a photoelectric conversion material using empty fullerene as an electron acceptor. In comparison, photoconductivity is significantly enhanced.
  • the photoelectric conversion enhancement effect of the photoelectric conversion material is particularly high.
  • the photoelectric conversion efficiency can be improved by constituting a photoelectric conversion device using the photoelectric conversion material of the present invention. For example, it is highly effective in improving the sensitivity of photosensors and improving the energy conversion efficiency of photovoltaic cells.
  • a photoelectric conversion material can be produced by mixing and stirring a solution in which a photoconductive enhancer is dissolved and a solution in which an electron-donating organic material is dissolved. This is effective in reducing strikes.
  • FIG. 1 (a) and (b) are cross-sectional views of the organic thin film solar cell of the present invention.
  • FIG. 2 (a) and (b) are a plan view and a cross-sectional view of a photoelectric conversion characteristic measurement sample.
  • C is a plan view and a cross-sectional view of a photoelectric conversion characteristic measurement sample.
  • FIG. 4 (a) and (b) are cross-sectional views of an endohedral fullerene production apparatus.
  • FIG. 6 is a cross-sectional view of a conventional organic thin film solar cell.
  • Fullerene is a concept including repetitive bonds (ionic bonds, covalent bonds, etc.) of fullerenes such as fullerenes, heterofullerenes, chemically modified fullerenes, and fullerene dimers.
  • atoms may be included in all fullerene units (for example, in the case of a dimer, an embodiment in which only one fullerene is included) can be mentioned.
  • Atomic inclusion is defined as a state in which atoms other than carbon are confined in a hollow portion of a cage-like fullerene molecule.
  • the number of atoms to be included may be one or plural, but the maximum number of atoms to be included is limited to the size of the fullerene molecule and the size of the included atoms.
  • C includes Li, it is preferable to include one or two atoms.
  • “Empty fullerene” is a fullerene in which atoms are not encapsulated in the hollow part of a cage-like fullerene molecule.
  • Mated fullerene is a single carbon cluster material in which a plurality of different types of fullerenes are mixed. According to Non-Patent Document 1, when fullerene is produced by resistance heating method or arc discharge method, 70 to 85% of the fullerene produced is C, 10-1
  • an endohedral fullerene in which Li is encapsulated in the mixed fullerene as an encapsulated atom can be used as the photoconductive enhancer.
  • Photoelectric conduction refers to electric conduction caused by irradiating light.
  • the photoconductivity enhancer is preferably an electron acceptor, an electron acceptor, a photoconductivity enhancer, or a combination thereof.
  • the photoconductivity enhancer according to the present invention (1) may contain components other than the endohedral fullerenes.
  • Electron donor is a substance having a property (electron donating property) that allows electrons to be transferred to another substance.
  • Electron donating organic materials include polythiophene such as poly-3-hexylthiophene (P3HT), poly p-phenylene, poly p-phenylene vinylene, polyaniline, polypyrrole, PEDOT, P30T, POPT, MDMO -High molecular weight polymers such as PPV and MEH-PPV and their derivatives are used.
  • the electron-donating organic material is not limited to a polymer, for example, porphyrin compounds such as ZnPC, porphyrin, tetraphenylporphine copper, phthalocyanine, copper phthalocyanine, titanium phthalocyanine oxide, 1,1-bis ⁇ 4- (Di-P-tolylamino) phenol ⁇ cyclohexane, 4,4 ', 4 "-trimethyltriphenyl-lamine, ⁇ , ⁇ , ⁇ ', ⁇ '-tetrakis (P-tolyl)-P -Phenylenediamine, 1- ( ⁇ , ⁇ -di- ⁇ -triramino) naphthalene, 4,4'-bis (dimethylamino) -2-2'-dimethyltrimethane, ⁇ , ⁇ , ⁇ ', ⁇ '-Tetraphenyl-4,4'-diaminobiphenyl, ⁇ , ⁇ '-diphenyl
  • An "electron acceptor” is a substance that has the property (electron acceptability) that can easily accept electrons. According to Non-Patent Document 2, as an electron-accepting organic material, conventionally, C
  • Photoelectric conversion material refers to a material that converts an optical signal or optical energy into an electrical signal or electrical energy.
  • Bulk Heterojunction type photoelectric conversion materials are produced by uniformly mixing an electron donor and an electron-accepting organic material. Electrons and holes are excited by light irradiation. Excited electrons are captured by the electron acceptor and move between the electron acceptors, and holes move between the electron donors to cause electrical conduction.
  • a “photoelectric conversion device” is a device that converts an optical signal or optical energy into an electrical signal or electrical energy using a photoelectric conversion material.
  • Substrate refers to a member that has a function of supporting a photoelectric conversion material
  • electrode refers to an electrical signal or energy generated when light is applied to the photoelectric conversion material. It is an interface that outputs to.
  • a photoelectric conversion device that converts an optical signal or optical energy into an electrical signal is specifically defined as “one optical sensor”.
  • the optical sensor include a digital camera, a light receiving sensor for optical communication, and a light detection switch.
  • a photoelectric conversion device that converts light energy into electrical energy is particularly defined as a "photocell”.
  • Photovoltaic cells include solar cells.
  • the endohedral fullerenes according to the present invention for example, generate plasma by injecting encapsulated atomic vapor onto a hot plate heated in a vacuum vessel, and irradiate the generated plasma flow to a deposition plate disposed downstream of the plasma flow. It can be produced by a method of depositing endohedral fullerenes.
  • an endohedral fullerene production apparatus includes a plasma generating unit, a fullerene introducing unit, a tubular vacuum vessel 31 having an encapsulating fullerene depositing unit, a vacuum pump 32 for exhausting the vacuum vessel 31, and a magnetic field generating coil 33 for confining plasma.
  • encapsulated atomic materials such as Li are heated in an oven 34 and sublimated.
  • the generated encapsulated atom vapor is introduced into the plasma generation section through the introduction pipe 35 and the encapsulated atom plasma is generated on the hot plate 36.
  • the generated internal atomic plasma flows in the direction of the tube axis along a uniform magnetic field.
  • fullerenes such as C are removed by the oven 38.
  • the endohedral fullerenes according to the present invention can also be produced by the production apparatus shown in Fig. 4 (b).
  • the apparatus for producing endohedral fullerenes consists of a tubular vacuum vessel 51 consisting of a plasma generation unit, fullerenes introduction unit, inclusion fullerenes deposition unit, a vacuum pump 52 for exhausting the vacuum vessel 51, and a magnetic field generating coil for confining the plasma. 53.
  • the encapsulated atomic material such as Li is heated in an oven 54 and sublimated.
  • the generated encapsulated atomic vapor is introduced into the plasma generator through the introduction pipe 55, and the encapsulated atomic plasma is generated on the hot plate 56.
  • the generated encapsulated atomic plasma flows in the tube axis direction along a uniform magnetic field, and is applied to the deposition plate 60.
  • steam obtained by sublimating fullerenes such as C by the oven 58 is introduced in the fullerene introduction section disposed in front of the deposition plate 60.
  • a negative bias voltage is applied to the deposition plate 60 by a bias power source 61. Li positive ions composing the plasma by the negative noise voltage are accelerated. Then, the fullerenes deposited on the deposition plate 60 collide with each other and are contained in the fullerene molecules, and the inclusion fullerenes are deposited on the surface of the deposition plate 60.
  • the resulting film deposited on the deposition plate includes encapsulated atoms that are not encapsulated in empty fullerenes or fullerenes.
  • a method for increasing the purity of the endohedral fullerenes is to peel off the produced film from the deposition plate and form a powder, and then in the solution due to the difference in solubility between the endohedral fullerenes and substances other than the endohedral fullerenes in a specific solution.
  • a method of concentrating the endohedral fullerene in a residue insoluble in the solution is used. For example, for fullerene, empty fullerene has higher solubility than Li-encapsulated fullerene, and Li-encapsulated fullerene can be concentrated by repeating the work of dissolving in toluene and collecting the residue.
  • FIGS. 1 (a) and 1 (b) are cross-sectional views of the organic thin-film solar cell of the present invention.
  • the organic thin-film solar cell shown in Fig. 1 (a) is composed of a glass substrate 1, a positive electrode 2 made of a transparent material such as ITO, an electron-donating organic material 3 made of P3HT, and an endohedral fullerene that has Li-containing fullerene force 4 It is composed of a photoelectric conversion material film doped with a negative electrode 5 having A1 force.
  • Fig. 1 (b) As shown in Fig. 1 (b), light represented by hV is incident on a photoelectric conversion material made of P3HT doped with Li-containing fullerene through a glass substrate 1 and a transparent positive electrode 2. .
  • P3HT an electron-hole pair is generated when excited by light energy.
  • the generated electrons have an electron affinity. Since it is trapped by the large Li-encapsulated fullerene, the probability of recombination with holes generated simultaneously with electrons is reduced. Li @ C LUMO is lower than C LUMO, so excited electrons are
  • Li-encapsulated fullerene Efficiently captured by Li-encapsulated fullerene.
  • the trapped electrons move by hopping between the Li-encapsulated fullerene molecules.
  • the generated holes move between the P3HT electron donors by hobbing.
  • the lifetime of electrons and holes, which are carriers for photoconduction, is increased, so that photoconduction is promoted and photocurrent is increased.
  • An organic solar cell is manufactured by sandwiching a thin film made of a photoelectric conversion material composed of an electron donor and an electron acceptor between an electrode 2 made of ITO and an electrode 5 made of A1. Due to the difference in the band structure of the ITO electrode 2, the photoelectric conversion film, and the A1 electrode 5, the holes generated in the photoelectric conversion film move to the ITO electrode 2 side, and the generated electrons move to the A1 electrode 5 side.
  • an external load (not shown) is connected between the ITO electrode 2 and the A1 electrode 5 via the wirings 6 and 7, current flows from the ITO electrode 2 to the A1 electrode 5 through the external load.
  • Li-encapsulated fullerene is used as an electron acceptor, Li-encapsulated fullerene has higher electron mobility than empty fullerene, and can increase photocurrent.
  • a photoelectric conversion film using the photoelectric conversion material of the present invention can be produced by an extremely simple process.
  • the powdered endohedral fullerenes produced and separated by the above-described endohedral fullerene production method and purification method are dissolved in a solvent such as carbon disulfide.
  • the electron-donating organic material is dissolved in a solvent such as toluene.
  • the endohedral fullerene solution and the electron donating organic material solution are agitated ultrasonically to disperse the endohedral fullerene sufficiently uniformly in the electron donating organic material.
  • the amount of endohedral fullerene doped is, for example, the weight percentage of Li @ C relative to P3HT.
  • Lwt% or more and 60 wt% or less is preferable. If the endohedral fullerene is too small, electrons excited by light irradiation are not efficiently captured by the endohedral fullerene, and the photocurrent cannot be increased sufficiently. In addition, the endohedral fullerene is an expensive material as compared with the electron donating organic material, and when the amount of the endohedral fullerene is increased, there is a problem that the production cost increases. Even if the number of electron donors is too small compared to the electron acceptor, the number of electron-hole pairs excited by light irradiation decreases, so that photoconductivity occurs. Of endohedral fullerenes and electron-donating organic materials It is possible to optimize the photoelectric conversion efficiency by setting the ratio within the appropriate range described above.
  • a photovoltaic cell such as a solar cell can be fabricated by sandwiching the photoelectric conversion film between a positive electrode and a negative electrode.
  • the positive electrode it is preferable to use an electrode material having the same or larger work function than the HOMO level of the photoelectric conversion film. Further, in view of the use as a photovoltaic cell, it is preferable that at least one of the positive electrode and the negative electrode is transparent or translucent. Examples of such electrode materials include gold (for example, in the form of a semipermeable membrane) and ITO (Indium Tin Oxide).
  • the negative electrode it is preferable to use a stable electrode material having a smaller work function than the work function of the anode.
  • a stable electrode material having a smaller work function than the work function of the anode For example, alloys such as aluminum, silver, Mg-In, Mg-Ag can be cited. Note that, as described above, it is preferable that at least one of the positive electrode and the negative electrode is transparent or semi-transmissive in relation to the use of the photovoltaic cell.
  • An optical sensor using a bulk heterojunction type photoelectric conversion film is an optical sensor that operates on a principle similar to that of animal photoreceptors, and functions as an extremely sensitive optical sensor.
  • the number of carriers, which are excited electrons and hole power, is controlled by the difference in the light intensity incident on the optical sensor. Therefore, the electrodes arranged between the electrodes arranged at a certain interval on the photoelectric conversion film or the photoelectric conversion film are vertically moved.
  • the incident light intensity can be measured by measuring the current, voltage, or resistance between the sandwiched electrodes.
  • the optical sensor manufactured using the photoelectric conversion material using the endohedral fullerene of the present invention as an electron acceptor is an optical sensor manufactured using a conventional photoelectric conversion material using an empty fullerene as an electron acceptor.
  • the endohedral fullerene has a higher efficiency of capturing electrons and the mobility of the electron in the endohedral fullerene is larger, so that it is possible to detect light with higher sensitivity than a conventional photosensor.
  • the method for manufacturing the photoelectric conversion device of the present invention is manufactured by a well-known conventional method. Those skilled in the art can appropriately set various conditions.
  • the raw material Li is Lid made by Aldrich
  • the raw material C is C made by Frontier Carbon.
  • the vacuum vessel was evacuated to a vacuum degree of 4.2 X 10- 5 Pa, by the electromagnetic coil, to generate a magnetic field having a field strength 0.2 T.
  • the encapsulated atom sublimation oven was filled with solid Li and heated to a temperature of 480 ° C to sublimate Li and generate Li gas.
  • the generated Li gas was introduced through a gas inlet tube heated to 500 ° C and injected onto a hot plate heated to 2500 ° C.
  • a plasma flow consisting of positive ions of Li ionized on the hot plate surface and electron force was generated, and the deposition plate was irradiated with the plasma flow.
  • the deposition plate was irradiated with C vapor heated and sublimated to 610 ° C in a fullerene oven. -20V bias for deposition plate
  • a voltage was applied to deposit a thin film containing endohedral fullerene on the surface of the deposition plate. After about 1 hour of deposition, a thin film with a thickness of 0.9 m was deposited.
  • the deposited thin film is peeled off from the deposition plate, and the powdered thin film is dissolved in a solvent containing carbon dioxide, and Li is encapsulated using HPLC !, NA! /, Fullerene and Li inclusion Fullerenes were separated.
  • FIG. 5 shows mass spectrometry data of Li-encapsulated fullerene produced by the above-described method for producing endohedral fullerene.
  • 2 (a) and 2 (b) are a plan view and a cross-sectional view of a sample for measuring photoelectric conversion characteristics.
  • samples A and B conductive polymer doped with Li-containing fullerene
  • sample C empty fullerene was doped
  • Conductive polymer Conductive polymer
  • Sample D non-doped conductive polymer
  • the measurement sample was prepared according to the following procedure.
  • Samples A to D A glass substrate 13 (18 mm X 18 mm, thickness 0.12 to 0.17 mm) was prepared, and a plurality of rectangular A1 patterns were formed on the glass substrate by vapor deposition.
  • the no-turn interval L was set to 0.5 mm.
  • the prepared solution was dropped onto the A1 pattern deposition substrate prepared in (1) and spin coated at a rotational speed of 2000 rpm for 20 seconds to form a photoelectric conversion film.
  • the prepared solution was dropped onto the A1 pattern deposition substrate prepared in (1) and spin coated at a rotational speed of 2000 rpm for 20 seconds to form a photoelectric conversion film.
  • Sample C was added to 2 ml of toluene lwt% solution in which P3HT (poly-3-hexylthiophene) was dissolved.
  • the prepared solution was dropped onto the patterned vapor deposition substrate prepared in (1) and spin coated at a rotational speed of 2000 rpm for 20 seconds to form a photoelectric conversion film.
  • Sample D 2 ml of toluene lwt% solution in which P3HT (poly 3 hexylthiophene) is dissolved is dropped onto the pattern deposition substrate prepared in (1) and spin coated at a rotational speed of 2000 rpm for 20 seconds to form a photoelectric conversion film. Formed.
  • P3HT poly 3 hexylthiophene
  • FIG. 2 (c) is a cross-sectional view of a photoelectric conversion characteristic measuring apparatus.
  • Spectral light source 15 JASCO CT10T
  • optical system 16 for controlling the wavelength of irradiation light
  • sample 18 are placed in dark room 14.
  • A1 putter next to each other A 100 V noise voltage was applied between the two electrodes using a semiconductor parameter measurement device 19 (Agilent 4155), and the value of the current flowing between the A1 patterns was measured.
  • the irradiation light intensity was 25.3 W at a wavelength of 400 nm. Irradiation light intensity at each wavelength was measured, and the measured photocurrent value was corrected so that the irradiation light intensity was constant.
  • the current value (light current) when light irradiation is not performed is measured, the dark current is subtracted from the current measurement value during light irradiation, and the current value (photocurrent) generated by light irradiation is calculated.
  • the wavelength dependence of photocurrent was plotted.
  • FIG. 3 shows measurement data of the photocurrent spectrum. All of the measured photoelectric conversion films were found to have a photocurrent spectrum having a peak between 600 nm and 650 nm. For example, comparing the photocurrent at 6 OOnm,
  • P3HT doped with 10 wt% Li @ C has a photocurrent increased approximately 20 times compared to undoped P3HT.
  • P3HT doped with 10 wt% Li @ C has a photocurrent higher than that of P3HT doped with 10 wt% C.
  • a photoelectric conversion material composed of an electron acceptor composed of an atom-encapsulated fullerene and an electron donor composed of an electron-donating organic material is a photoelectric conversion material using empty fullerene as an electron acceptor. In comparison, photoconductivity is significantly enhanced.
  • the photoelectric conversion enhancement effect of the photoelectric conversion material is particularly high.
  • the photoelectric conversion efficiency can be improved by constituting a photoelectric conversion device using the photoelectric conversion material of the present invention. For example, it is highly effective in improving the sensitivity of photosensors and improving the energy conversion efficiency of photovoltaic cells.
  • a photoelectric conversion material can be manufactured by mixing and stirring a solution in which a photoconductive enhancer is dissolved and a solution in which an electron-donating organic material is dissolved. This simplifies the manufacturing process and reduces manufacturing costs. Is effective.

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Abstract

Les fullerènes creux s’utilisent comme accepteur d’électron en tant qu’élément constitutif d’un matériau de transduction photoélectrique. Cependant, on ne parvient pas à obtenir un effet d’intensification de photocourant satisfaisant. L’invention concerne la production d’un matériau de transduction photoélectrique consistant à employer un fullerène endohédral de confinement d’atome comme accepteur d’électron et à doper un matériau organique donneur d’électron avec le fullerène endohédral de confinement d’atome. On observe une augmentation marquée du photocourant par rapport au matériau de transduction photoélectrique conventionnel.
PCT/JP2005/015876 2004-08-31 2005-08-31 Matériau de transduction photoélectrique, appareil de transduction photoélectrique et procédé de fabrication de matériau de transduction photoélectrique WO2006025433A1 (fr)

Applications Claiming Priority (2)

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JP2004251206A JP2006073201A (ja) 2004-08-31 2004-08-31 光電変換材料、光電変換装置、及び、光電変換材料の製造方法
JP2004-251206 2004-08-31

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