WO2006011714A1 - Procede de fabrication de sonde a nano-aiguille spm et cd-spm au moyen d'un faisceau ionique et sonde a nano-aiguille spm et cd-spm ainsi obtenue - Google Patents

Procede de fabrication de sonde a nano-aiguille spm et cd-spm au moyen d'un faisceau ionique et sonde a nano-aiguille spm et cd-spm ainsi obtenue Download PDF

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Publication number
WO2006011714A1
WO2006011714A1 PCT/KR2005/002097 KR2005002097W WO2006011714A1 WO 2006011714 A1 WO2006011714 A1 WO 2006011714A1 KR 2005002097 W KR2005002097 W KR 2005002097W WO 2006011714 A1 WO2006011714 A1 WO 2006011714A1
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WO
WIPO (PCT)
Prior art keywords
nanoneedle
ion beam
probe
spm
tip
Prior art date
Application number
PCT/KR2005/002097
Other languages
English (en)
Inventor
Byong-Cheon Park
Ki-Young Jung
Won-Young Song
Jae-Wan Hong
Beom-Hoan O
Sang-Jung Ahn
Original Assignee
Korea Research Institute Of Standards And Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050036631A external-priority patent/KR100679619B1/ko
Application filed by Korea Research Institute Of Standards And Science filed Critical Korea Research Institute Of Standards And Science
Priority to JP2007523466A priority Critical patent/JP4740949B2/ja
Priority to US11/571,239 priority patent/US7703147B2/en
Priority to CH01913/06A priority patent/CH702315B1/de
Priority to CN2005800257433A priority patent/CN1993609B/zh
Priority to DE112005001585.8T priority patent/DE112005001585B4/de
Publication of WO2006011714A1 publication Critical patent/WO2006011714A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/08—Probe characteristics
    • G01Q70/10—Shape or taper
    • G01Q70/12—Nanotube tips

Definitions

  • the present invention relates to a method for fabricating a scanning probe microscope (SPM) nanoneedle probe using an ion beam and a nanoneedle probe thereby. More particularly, the present invention relates to a method for fabricating a SPM nanoneedle probe capable of being easily adjusted with an intended pointing direction of a nanoneedle attached on a tip of the SPM nanoneedle probe and of being easily straightened with the nanoneedle attached on the tip of the SPM nanoneedle probe along the intended pointing direction, and to a SPM nanoneedle probe thereby.
  • SPM scanning probe microscope
  • the present invention relates to a method for fabricating a critical dimension SPM (CD-SPM) nanoneedle probe capable of precisely scanning the sidewall of an sample object in nanoscale using ion beam, and to a CD-SPM nanoneedle probe thereby. More particularly, the present invention relates to a method for fabricating a CD-SPM nanoneedle probe capable of precisely scanning the sidewall of the sample object in nanoscale by bending a portion of an end of the nanoneedle attached on the tip of the SPM nanoneedle probe in a specific angle toward a certain direction other than an original direction in which the nanoneedle attached on the tip of the SPM nanoneedle probe extends out, and to a CD-SPM nanoneedle probe thereby.
  • CD-SPM critical dimension SPM
  • needle includes what terms “nanotube” and “nanowire” refer to.
  • An SPM is a device used in a field of nanoscale technology, which is very powerful and useful as well as being delicate.
  • the SPM is distinguished into various kinds such as an atomic force microscope (AFM) utilizing an atomic force applied between a probe and a sample object, a magnetic force microscope (MFM) utilizing a magnetic force applied between the probe and the sample object, an electrostatic force microscope (EFM) utilizing an electrostatic force applied between the probe and the sample object, and a scanning near field optical microscope (SNOM) utilizing an optical property of the sample object, etc.
  • AFM atomic force microscope
  • MFM magnetic force microscope
  • EFM electrostatic force microscope
  • SNOM scanning near field optical microscope
  • the carbon nanotube has a high aspect ratio as well as excellent electrical and mechanical properties as well known. Accordingly, a research has been undertaken on a method for scanning a sample object by the carbon nanotube attached on the tip of the SPM probe (mother probe) .
  • Korean patent application number 10-2002-0052591 filed by the applicant of the present invention discloses a fabricating apparatus to adjust the pointing direction of the nanoneedle attached on the tip of the SPM probe and a method for fabricating such nanoneedle.
  • Korean patent application 10-2002-0052591 still has technical disadvantages of long process time and high cost required to fabricate a nanoneedle SPM probe as well as low throughput because the patent application utilizes a nanomanipulator and a medium attached the tip of the probe to adjust the pointing direction of the nanoneedle.
  • adjusting the accuracy of the pointing direction of the nanoneedle is required not only for scanning in CD as described above, but also for obtaining a correct scanning image using a general nanoneedle SPM probe Particularly, in case where the nanoneedle attached on the tip of the probe is long, it becomes a more important technical factor to adjust the accuracy of the pointing direction of the nanoneedle.
  • the nanoneedle attached on the tip of the SPM probe is dither crooked or curled due to certain manufacturing problems. Accordingly, a technical means is required to straighten the nanoneedle attached on the tip of the SPM probe for such cases.
  • the conventional SPM probe or the SPM nanoneedle probe having an end with a shape of a straight line has a limitation in scanning the shape of the sidewall of the sample object having irregularity in nanoscale level.
  • a distorted image being different from the actual shape of the sidewall of the sample object is obtained instead as shown in FIG. 14 because the probe scans the sidewall illustrated in FIG. 13.
  • US patent 6,246,054 disclosed the SPM probe having an end with shapes illustrated in FIG. 15, it still has a disadvantage in that the method to fabricate such probe and the scanning method are too complicated. Besides, it has a certain limitation in accuracy of the scanning the sidewall of a sample object to be scanned.
  • An objective of the present invention is achieved by a method for fabricating a scanning probe microscope (SPM) nanoneedle probe using ion beam, which comprises: positioning a tip of the SPM probe on which a nanoneedle is attached toward a direction in which the ion beam is irradiated; and aligning the nanoneedle attached on the tip of the SPM probe with the said ion beam in parallel by irradiating the ion beam in a direction toward the tip of the SPM probe on which the nanoneedle is attached, wherein said aligning the nanoneedle includes straightening the nanoneedle attached on the tip of the SPM probe along a direction in which the ion beam is irradiated.
  • SPM scanning probe microscope
  • the method for fabricating the SPM nanoneedle probe further comprises severing the nanoneedle attached on the tip of the SPM probe in a predetermined length by irradiating focused ion beam in a specific angle from the nanoneedle attached on the tip of the SPM probe aligned parallelly with the ion beam.
  • the ion beam used in the aligning the nanoneedle is focused ion beam.
  • an acceleration voltage of the focused ion beam should be between 5kV and 3OkV, an amount of current be between IpA and InA, and time during which the nanoneedle is exposed to the FIB be between 1 and 60 seconds.
  • the focused ion beam is one of Ga ion beam, Au ion beam, Ar ion beam, Li ion beam, Be ion beam, He ion beam, and Au-Si-Be ion beam.
  • an objective of the present invention is achieved by a nanoneedle probe of a SPM fabricated using the ion beam, which is characterized in that the nanoneedle attached on the tip of the SPM probe is aligned with the ion beam in parallel by irradiating the ion beam in a direction toward the tip of the SPM probe on which the nanoneedle is attached, and that the nanoneedle attached on the tip of the SPM probe is straightened along a direction of the ion beam by the ion beam irradiated toward the tip of the SPM probe.
  • the nanoneedle attached on the tip of the SPM probe is severed in a predetermined length by irradiating the ion beam in a specific angle from the nanoneedle attached on the tip of the SPM probe aligned in parallel with the ion beam.
  • a method of fabricating a CD-SPM nanoneedle probe using the ion beam which comprises screening a certain portion of the nanoneedle attached on the tip of the SPM probe using a mask, bending a part of the nanoneedle exposed out of the mask to align the part of the nanoneedle in a direction of the irradiated ion beam by irradiating the ion beam on the part of the nanoneedle exposed out of the mask, as well as by a CD-SPM nanoneedle probe thereby.
  • FIG. 1 illustrates a method for fabricating a nanoneedle probe used in a scanning probe microscope(SPM) according to an embodiment of the present invention, schematically.
  • FIG. 2 and 3 are photographs of a tip of a scanning electron microscope (SEM) attached with a nanoneedle before radiation of ion beam and after the radiation of the ion beam, respectively.
  • SEM scanning electron microscope
  • FIG. 4 illustrates assigning a patterning area of a focused ion beam (FIB) system, schematically.
  • FIB focused ion beam
  • FIG. 5 and 6 are photographs of SEM after irradiating the ion beam on the patterning area shown in FIG. 3.
  • FIG. 7 illustrates schematically a method to fabricate a CD-SPM nanoneedle probe according to another embodiment of the present invention.
  • FIG. 8 illustrates schematically a shape of the CD-SPM nanoneedle probe processed by the method illustrated in FIG. 7.
  • FIG. 9 is a photograph of the SPM nanoneedle before being processed by the method illustrated in FIG. 7.
  • FIG. 10 is a photograph of the CD-SPM nanoneedle probe after being processed by the method illustrated in FIG. 7.
  • FIG. 11 illustrates schematically how a CD-SPM nanoneedle probe fabricated according to the present invention scans a re-entrant sidewall of a sample object.
  • FIG. 12 through 14 illustrate schematically a process of scanning the re-entrant sidewall using a conventional SPM probe and a result from the scanning.
  • FIG. 15 illustrates various shapes of an end of the conventional SPM probe fabricated to scan the different sidewall features of the sample object.
  • the term “nanoneedle” used hereinafter includes what terms “nanotube” and “nanowire” refer to.
  • the method of fabricating the SPM nanoneedle probe or the CD-SPM nanoneedle probe according to the present invention can be applied to all kinds of nanotu.be including a commonly used nanotube such as carbon nanotube, BCN nanotube, or BN nanotube, a single-walled nanotube, a double-walled nanotube, or a multi-walled nanotube, regardless of the kind of the nanotube.
  • FIG. 1 illustrates a method for fabricating a nanoneedle probe used in a scanning probe microscope (SPM) according to an embodiment of the present invention, schematically.
  • SPM scanning probe microscope
  • An SPM is shown on the bottom of the FIG. 1 which particularly describes a tip of an atomic force microscope (AFM) comprising a cantilever 14 and a tip 13 protruding from the cantilever 14, and a nanoneedle 15' or 15 attached on an end of the tip 13.
  • AFM atomic force microscope
  • the nanoneedle 15' or 15 attached on the tip 13 of the probe is attached on an end of the tip 13 of the probe by a method of welding with impurities 16.
  • Top of the FIG. 1 shows an ion column 11 and ion beam irradiated toward the nanoneedle 15' or 15 from the ion column 11 schematically.
  • the tip 13 of the probe has a shape such as a pyramid, or a cone.
  • the forementioned Korean patent document discloses a method which is characterized in that a medium is attached on a tip of a probe so that a surface on which a nanoneedle is to be attached can be prepared before attaching the nanoneedle so as to adjust a pointing direction of a nanoneedle, or in that the pointing direction of the nanoneedle is adjusted using a nanoneedle manipulator.
  • a method which is characterized in that a medium is attached on a tip of a probe so that a surface on which a nanoneedle is to be attached can be prepared before attaching the nanoneedle so as to adjust a pointing direction of a nanoneedle, or in that the pointing direction of the nanoneedle is adjusted using a nanoneedle manipulator.
  • a required accuracy of a direction of the nanoneedle approximately, 2 to 3 degree
  • CD critical dimension
  • a numeral 15' indicates a nanoneedle being attached on the tip 13 of the probe and having a direction and shape before ion beam 12 is irradiated toward the nanoneedle 15' from the ion column 11.
  • a numeral 15 indicates a nanoneedle being attached on the tip 13 of the probe and having a direction and shape after ion beam 12 is irradiated toward the nanoneedle 15' from the ion column 11.
  • the ion beam 12 is irradiated toward the tip 13 of the probe on which the nanoneedle 15' is attached. Then, the nanoneedle 15 ' attached on the tip 13 of the probe is aligned in parallel with the ion beam 12. Besides, it is clearly shown in the drawing that the nanoneedle 15' attached on the tip 13 of the probe is straightened along a direction in which the ion beam 12 is irradiated.
  • FIGs. 2 and 3 are photographs of experiment results, which supports such facts described above more clearly.
  • FIG. 2 shows a photograph of the tip of the scanning electron microscope (SEM) on which the nanoneedle is attached before irradiating the ion beam
  • FIG. 3 shows a photograph of the SEM after irradiating the ion beam.
  • SEM scanning electron microscope
  • the inventor of the present invention varied an acceleration voltage of the ion beam, an amount of current of the ion beam, and time during which the nanoneedle is exposed to the ion beam through a number of experiments to obtain an optimal condition required for fabricating the SPM nanoneedle probe having most excellent properties.
  • the pointing direction of the nanoneedle is easily changed toward the direction of the radiation of the ion beam as the acceleration voltage and the amount of current of the ion beam gets bigger and the exposure time gets longer.
  • the inventor of the present invention found that it is preferable that the acceleration voltage of the ion beam should be 5kV to 3OkV, the amount of current of the ion beam be IpA to InA, and the time during which the nanoneedle is exposed to the ion beam be 1 to 60 seconds.
  • the ion beam that may be used in the method of fabricating the SPM nanoneedle probe according to an embodiment of the present invention includes various kinds of ion beams such as Au ion beam, Ar ion beam, Li ion beam, Be ion beam, He ion beam, and Au-Si-Be ion beam as well as Ga ion beam.
  • FIG. 4 illustrates assigning a patterning area where the ion beam would pass before initiation of a FIB system, schematically.
  • the patterning area is indicated by a rectangle transversing the nanoneedle attached on the tip of the probe.
  • the ion beam is irradiated toward the upper part of the rectangle after assigning the patterning area as shown in FIG. 4.
  • FIG. 5 is a photograph of SEM after irradiating the focused ion beam toward the nanoneedle by the FIB system after assigning patterning area.
  • FIG. 6 is a photograph of SEM magnified on an end of the tip of the probe on which the nanoneedle is attached. As shown in the FIGs 5 and 6, it is clearly noted not only that the nanoneedle attached on the tip of the probe is aligned along the direction of the ion beam, but also that the nanoneedle is straightened along the direction of the ion beam.
  • the pointing direction of the nanoneedle attached on the tip of the probe must be achieved with the desired accuracy (ranging between 2 and 3 degree) , which cannot be achieved by the conventional technology. Also, with the same results, a nanoneedle probe with the shape and the pointing direction having sufficient level of accuracy enabling scanning in critical dimension (CD) must be implemented.
  • CD critical dimension
  • the present invention can realize the nanoneedle probe with the pointing direction and the shape having the accuracy good enough to scan the critical dimension (CD) , which was not solved by the conventional technology.
  • the inventor of the present invention implemented the same experiment with increased strength of the focused ion beam of the FIB system after assigning the patterning area as shown in FIG. 4.
  • the nanoneedle is severed as described in forementioned US patent 6,759,653.
  • the inventor of the present invention concluded that while the pointing direction and the shape of the nanoneedle are adjusted by the effect of the ion beam within a specific threshold of the strength of the ion beam irradiated on the nanoneedle, the nanoneedle is severed over the threshold.
  • the pointing direction and the shape of the nanoneedle are adjusted by fitting properly the acceleration voltage, the amount of current, and the exposure time of the ion beam irradiated on the nanoneedle attached on the tip of the SPM probe.
  • FIG. 7 illustrates schematically a method to fabricate a CD-SPM nanoneedle probe according to another embodiment of the present invention.
  • an SPM probe is shown on the bottom of the FIG. 7 which specifically describes a tip of an AFM comprising a cantilever 14 and a tip 13 protruding from the cantilever 14, and a nanoneedle 15' or 15 attached on an end of the tip 13.
  • the nanoneedle 15 attached on the tip 13 of the probe is attached on an end of the tip of the probe by the method of welding with impurities 16.
  • FIG. 7 includes a mask 17 to screen a portion under a certain part of the nanoneedle.
  • the length L of the bent portion of the nanoneedle 15 can be adjusted by fitting an area of the nanoneedle 15 screened by the mask 17. Also, the angle ⁇ in which the nanoneedle 15 is bent can be adjusted by fitting an angle in which the ion column 11 irradiates the ion beam 12.
  • a CD-SPM nanoneedle probe of desired shape can be manufactured by fitting a degree of screening with the mask 17 and the angle of the radiation of the ion beam 12 properly.
  • the CD-SPM nanoneedle probe can be fabricated either by a process illustrated in FIG. 7 after aligning the nanoneedle attached on the tip 13 of the probe using the ion beam according to the method shown in FIG. 1, or just by the process illustrated in FIG. 7 without having to aligning the nanoneedle as such.
  • FIG. 9 is a photograph of the SPM nanoneedle before being processed by the method illustrated in FIG. 7, while FIG. 10 is a photograph of the CD-SPM nanoneedle probe after being processed by the method illustrated in FIG. 7. As shown in FIG. 10, it may be clearly recognized that an end of the nanoneedle is bent.
  • FIG. 11 illustrates schematically how a CD-SPM nanoneedle probe fabricated according to the present invention scans a sidewall 22 of a sample object having an irregularity 21.
  • the sidewall having the irregularity of the sample object may be scanned precisely.
  • the CD-SPM nanoneedle probe fabricated in a manner described so far may be used to obtain a precise image of the sidewall having the irregularity of the sample object without any distortion on the image of the side surface of the sample object.
  • the present invention has an advantage that the accuracy of the pointing direction and the shape of the SPM nanoneedle probe are improved by providing the method of fabricating the SPM nanoneedle probe capable of being easily adjusted with the intended pointing direction of the nanoneedle attached on the tip of the SPM nanoneedle probe and of being easily straightened with the nanoneedle attached on the tip of the SPM nanoneedle probe along the intended pointing direction, and by providing the SPM nanoneedle probe fabricated thereby.
  • the present invention has an advantage of improving the throughput of the SPM nanoneedle probe by using such method.
  • the present invention has an advantage that the sidewall of the sample object may be scanned precisely in nanoscale by providing the method of fabricating the CD-SPM nanoneedle probe capable of scanning the sidewall of the sample object precisely, and the CD-SPM nanoneedle probe thereby.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
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  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Sampling And Sample Adjustment (AREA)

Abstract

L'invention concerne un procédé de fabrication d'une sonde à nano-aiguille de microscope-sonde à balayage (SPM) au moyen d'un faisceau ionique, de préférence, un faisceau ionique focalisé et une sonde à nano-aiguille ainsi obtenue. Plus précisément, l'invention concerne un procédé de fabrication d'une sonde à nano-aiguille SPM capable d'être réglée facilement avec une direction de pointage prévue d'une nano-aiguille fixée sur la pointe de la sonde à nano-aiguille SPM et d'être redressée facilement avec la nano-aiguille fixée sur la pointe de la sonde à nano-aiguille SPM, le long de la direction de pointage prévue et à une sonde à nano-aiguille SPM ainsi obtenue. L'invention concerne également un procédé de fabrication d'une sonde à nano-aiguille SPM(CD-SPM) de dimensions critiques capable de balayer de manière précise la paroi latérale d'un objet échantillon à l'échelle nano au moyen d'un faisceau ionique, de préférence, un faisceau ionique focalisé et une sonde à nano-aiguille CD-SPM ainsi obtenue. Plus précisément, l'invention concerne un procédé de fabrication d'une sonde à nano-aiguille CD-SPM capable de balayer de manière précise la paroi latérale de l'objet échantillon à l'échelle nano par pliage d'une partie d'une extrémité de la nano-aiguille fixée sur la pointe de la sonde à nano-aiguille SPM à un angle spécifique, dans une direction autre que la direction originale dans laquelle la nano-aiguille fixée sur la pointe de la sonde à nano-aiguille s'étend vers l'extérieur et une sonde à nano-aiguille CD-SPM ainsi obtenue. L'invention concerne, en outre, un procédé de fabrication d'une sonde à nano-aiguille de microscope-sonde à balayage (SPM) au moyen d'un faisceau ionique, consistant: à positionner la sonde de manière de la pointe de la sonde sur laquelle la nano-aiguille est fixée soit opposée à la direction dans laquelle le faisceau ionique est irradié; et à aligner la nano-aiguille fixée sur la pointe de la sonde avec le faisceau ionique en parallèle, par irradiation du faisceau ionique en direction de la pointe de la sonde sur laquelle la nano-aiguille est fixée. L'invention concerne enfin une sonde à nano-aiguille de microscope-sonde à balayage (CD-SPM) au moyen d'un faisceau ionique, consistant: à balayer une certaine partie de la nano-aiguille fixée sur la pointe de la sonde au moyen d'un masque; et à plier une partie de la nano-aiguille exposée hors du masque, de manière à aligner la partie de la nano-aiguille par irradiation du faisceau ionique sur la partie de la nano-aiguille exposée hors du masque, le long de la direction du faisceau ionique irradié.
PCT/KR2005/002097 2004-07-29 2005-07-01 Procede de fabrication de sonde a nano-aiguille spm et cd-spm au moyen d'un faisceau ionique et sonde a nano-aiguille spm et cd-spm ainsi obtenue WO2006011714A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007523466A JP4740949B2 (ja) 2004-07-29 2005-07-01 イオンビームを用いたｓｐｍナノニードル探針と、ｃｄ−ｓｐｍナノニードル探針の製造方法及び、その方法によって製造されるｓｐｍナノニードル探針並びに、ｃｄ−ｓｐｍナノニードル探針
US11/571,239 US7703147B2 (en) 2004-07-29 2005-07-01 Method for fabricating SPM and CD-SPM nanoneedle probe using ion beam and SPM and CD-SPM nanoneedle probe thereby
CH01913/06A CH702315B1 (de) 2004-07-29 2005-07-01 Verfahren zur Herstellung von SPM- und CD-SPM-Nanonadel-Sonden unter Einsatz von Ionenstrahlen und dadurch hergestellte SPM- und CD-SPM-Nanonadel-Sonden.
CN2005800257433A CN1993609B (zh) 2004-07-29 2005-07-01 用离子束制造纳米针探针的方法与由其制造的纳米针探针
DE112005001585.8T DE112005001585B4 (de) 2004-07-29 2005-07-01 Verfahren zur Herstellung von SPM- und CD-SPM-Nanonadel-Sonden

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2004-0059719 2004-07-29
KR20040059719 2004-07-29
KR10-2005-0036631 2005-05-02
KR1020050036631A KR100679619B1 (ko) 2004-07-29 2005-05-02 이온빔을 이용한 ｓｐｍ 나노니들 탐침과 ｃｄ-ｓｐｍ나노니들 탐침의 제조 방법 및 그러한 방법에 의해제조되는 ｓｐｍ 나노니들 탐침과 ｃｄ-ｓｐｍ 나노니들탐침

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WO2008147112A1 (fr) * 2007-05-29 2008-12-04 Cebt Co. Ltd. Colonne à électrons utilisant une extrémité à nanotubes en carbone et procédé d'alignement d'extrémité de ce type
US7501618B2 (en) 2007-02-26 2009-03-10 Korea Research Institute Of Standards Deformation method of nanometer scale material using particle beam and nano tool thereby
US11353478B2 (en) 2016-11-29 2022-06-07 Carl Zeiss Smt Gmbh Methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope

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US20020178799A1 (en) * 2001-05-31 2002-12-05 Olympus Optical Co., Ltd. SPM cantilever
JP2003090788A (ja) * 2001-09-19 2003-03-28 Olympus Optical Co Ltd Ｓｐｍカンチレバー及びその製造方法

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WO2008028521A1 (fr) * 2006-09-07 2008-03-13 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Sonde, spectromètre de raman et procédé de fabrication de sonde
US7501618B2 (en) 2007-02-26 2009-03-10 Korea Research Institute Of Standards Deformation method of nanometer scale material using particle beam and nano tool thereby
WO2008147112A1 (fr) * 2007-05-29 2008-12-04 Cebt Co. Ltd. Colonne à électrons utilisant une extrémité à nanotubes en carbone et procédé d'alignement d'extrémité de ce type
JP2010528446A (ja) * 2007-05-29 2010-08-19 シーイービーティー・カンパニー・リミティッド Ｃｎｔチップを用いる電子カラム及びｃｎｔチップを整列する方法
US11353478B2 (en) 2016-11-29 2022-06-07 Carl Zeiss Smt Gmbh Methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope
US11977097B2 (en) 2016-11-29 2024-05-07 Carl Zeiss Smt Gmbh Methods and devices for extending a time period until changing a measuring tip of a scanning probe microscope

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