WO2005124751A1 - Support d'informations optique multicouche - Google Patents

Support d'informations optique multicouche Download PDF

Info

Publication number
WO2005124751A1
WO2005124751A1 PCT/IB2005/051890 IB2005051890W WO2005124751A1 WO 2005124751 A1 WO2005124751 A1 WO 2005124751A1 IB 2005051890 W IB2005051890 W IB 2005051890W WO 2005124751 A1 WO2005124751 A1 WO 2005124751A1
Authority
WO
WIPO (PCT)
Prior art keywords
information
nano
elements
layer
medium
Prior art date
Application number
PCT/IB2005/051890
Other languages
English (en)
Inventor
Robert F. M. Hendriks
Ralph Kurt
Original Assignee
Koninklijke Philips Electronics N.V.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics N.V. filed Critical Koninklijke Philips Electronics N.V.
Publication of WO2005124751A1 publication Critical patent/WO2005124751A1/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/047—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using electro-optical elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Definitions

  • the invention relates to an optical information medium for storing information having at least two individually addressable information layers. Further, the present invention relates to a method of manufacturing such a medium, to an optical reading device for reading information from such a medium and to a corresponding reading method.
  • a DVD Digital Video Disc
  • Information is recorded on or read from an information layer by means of an optical beam, using local refractive index variations or the presence of surface relief structures.
  • the number of information layers in such an information medium is limited. It is notably due to the fact that the local refractive index variations of the written information patterns in the non-addressed layers cause refraction, absorption and/or scattering of the traversing light-beam, leading to deteriorated writing and reading.
  • R2S2 removable replicatable storage system
  • the information layer of the storage medium described therein has a pattern of transparent and non- transparent (say absorbing) marks representing the content information.
  • the storage capacity could be increased by introducing more information layers forming a multi-layer medium. Just laying standard absorbing information patterns on top of each other will cause strong inter-layer influence, in particular interference and in-sufficient optical throughput. Therefore, the information layers need to be addressed (or "activated") individually (preferably electrically) to make the stored information "visible”.
  • an optical information medium as claimed in claim 1, comprising at least two individually addressable information layers, wherein each information layer comprises: a transparent substrate layer, a nano-element layer comprising an array of nano-elements aligned substantially pe ⁇ endicular to the substrate layer, and - electrodes for providing one or more electrical fields in a direction substantially parallel to the substrate layer for changing the orientation of said nano-elements and thus changing the transmission profile of said nano-elements.
  • the invention is based on the idea to use a nano-element layer comprising an array of nano-elements whose orientation can be changed by use of an electrical field.
  • An electrical field is applied to the nano-elements by use of electrodes provided in each information layer so that each information layer can be addressed individually.
  • the nano- elements are adapted and oriented such that the intended change of their orientation leads to a change of their transmission profile.
  • the nano-elements show a first transmission rate for the radiation of a radiation beam provided for readout of the information, preferably show no or only little absorption, while in their changed orientation (with electrical field) the nano-elements show a second transmission rate for the radiation of a radiation beam, preferably a significant absorption.
  • Nano- element also called nano-crystal
  • nano-elements are small bodies having a more or less hollow (nanotubes) or filled (nanowires) cylindrical or prismatic shape having a smallest dimension, for example a diameter, in the nanometer range. These bodies have a symmetry axis the orientation of which determines electrical and optical properties, such as the absorption characteristics of the material wherein they are embedded.
  • an important aspect of the invention is the combination of the following two main properties of nano-elements: Change of the orientation (in an electrical field applied) "activates” or addresses a specific information layer and makes it therefore "visible” and the information is patterned into each information layer of the multi- layer medium by absorption contrast of the individual marks.
  • Change of the orientation in an electrical field applied
  • multi-layer optical media such as multi-layer optical cards, e.g.
  • the invention has a number of advantages: much faster switching between different information layers is achieved; no electrolyte layer is needed, which makes the multi-layer stack thinner; the polarization dependence of the absorption allows for additional suppression of the cross-talk between neighboring layers; less problems are expected with the number of readout cycles (reliability); and the marks in one layer do not need to be aligned with respect to the other layers, which makes fabrication of the medium much easier and cheaper.
  • Preferred embodiments of the invention are defined in the dependent claims. In a preferred embodiment only in predetermined areas of said nano-element layer nano- elements are provided, the absence and presence of said nano-elements representing an information mark.
  • the presence of nano-elements represents an information bit '1', while the absence of nano-elements represents an information bit '0', or vice versa.
  • the nano-element layer is completely filled with nano-elements, wherein in predetermined areas the nano-elements are adapted for substantially changing their orientation in response to the application of an electrical field, wherein in the other areas the nano-elements are adapted for not substantially changing their orientation in response to the application of an electrical field, the ability to change the orientation representing an information mark.
  • the whole nano-element layer comprises nano-elements, but in some areas the nano-elements are substantially 'immobilized', while they are 'mobilized' in the other areas, the ability to mobilize or not mobilize in response to the application of an electrical field representing an information mark.
  • the nano-elements are adapted to bend in response to the application of an electrical field.
  • the nano-elements when an electrical field is applied the nano-elements are forced to bend following the field lines of the electrical field, i.e. the nano- elements change their orientation as desired leading to a change of their transmission profile.
  • the corresponding absorption of the radiation of a readout radiation beam can be detected by scanning laterally the radiation transmitted through the information medium.
  • the information medium according to the invention for instance when it is implemented as a data card, to a plurality of electrodes in the card reader taking care of the correct addressing. Readout is thus more easy than the readout of optical storage systems using a rotating disc.
  • Bendable nano-elements for use in a display device are in more detail described in International Patent Application IB2004/050825 (PHNL 030640), which description is herein incorporated by reference.
  • the electrodes are arranged in a comb structure for providing a number of local electrical fields in the corresponding information layer.
  • large local field strengths at relatively low voltage can be obtained for addressing one single information layer.
  • only electrodes at one side are needed, thus reducing the number of layers on the stack.
  • the electrodes of neighboring information layers are arranged such that the electrical fields provided in neighboring information layers are rotationally displaced with each other by a rotation angle of substantially 90°.
  • the nano-elements of a first information layer change their orientation in a first direction
  • the nano-elements of neighboring information layers change their orientation in a different direction (displaced substantially 90°).
  • absorption of polarized light of such nano-elements shows strong anisotropy
  • cross-talk is minimized in that way.
  • cross-talk of possible electrical stray fields is reduced in this way. That means the electrical field applied to a first information layer does not influence the nano-elements of a second, neighboring information layer.
  • the nano-elements are nanowires or nanotubes, in particular carbon nanotubes (CNTs) or single wall nanotubes.
  • CNTs carbon nanotubes
  • Particularly carbon nanotubes have been well studied. They are one and/or multi-layered cylindrical carbon structures of basically graphitic (sp2-) config.d carbon. The existence of both metallic and semi-conducting nanotubes has been confirmed experimentally. Furthermore, it has recently been found that single-walled 4 A carbon nanotubes aligned in channels of an AlP0 4 -5 single crystal exhibit optical anisotropy.
  • Carbon nanotubes are nearly transparent for radiation having a wavelength in the rage of 1.5 ⁇ m down to 200 nm and having a polarization direction perpendicular to the tube axis. They show strong absorption for radiation having a wavelength in the range of 600 nm down to at least 200 nm and having a polarization direction parallel to the tube axis (Li Z M et al., Phys. Rev. Lett. 87 (2001), 127401-1 - 127401-4). Similar properties have been found for nanotubes (or nanowires) other than those consisting of carbon. Nanotubes therefore most conveniently combine the following features. They absorb radiation in a broad range of wavelengths dependent on the orientation of the nanotubes relative to the polarization direction of said radiation, and the orientation of nanotubes can be directed and/or stabilized mechanically and/or by an electric field.
  • Nanotubes therefore allow encoding information on a location of an optical information medium in a number of ways as described in the above mentioned International Patent Application PCT/IB 03/005101 (PHNL 021266), which description is herein incorporated by reference.
  • the nano-elements are adapted to have a reduced transmission rate in response to the application of an electrical field.
  • non-addressed information layers show an as large as possible transmission rate, while the transmission rate is as low as possible for addressed information layers.
  • the invention also relates to a method of manufacturing an optical information medium comprising the steps of:
  • the present invention relates to an optical reading device and a corresponding optical reading method as claimed in claims 8 and 9, said reading device comprising:
  • a detector for detecting radiation emitted from said radiation and transmitted through the medium and for converting the detected radiation into an electrical read signal
  • - addressing means for addressing one information layer of the at least two information layers of the medium by providing an electrical voltage to the electrodes of said information layer to be addressed.
  • Fig. 1 shows the principle of an optical reading device used according to the present invention
  • Fig. 2 shows an optical information medium according to the present invention
  • Fig. 3 shows the electrode structure used in an optical information medium according to the present invention
  • Fig. 4 illustrates the steps of a manufacturing method according to the present invention
  • Fig. 5 illustrates an optical reading device according to the present invention.
  • the present invention relates to a device for reading information stored on an information medium in accordance with the invention.
  • Fig. 1 shows an embodiment of such a reading device.
  • the device for reading data stored on an information medium M comprises an optical element for generating an array of light spots from a coherent input light beam R delivered by a light source (illumination unit) IU, said array of light spots being intended to scan the information medium M.
  • a light source illumination unit
  • the optical element is adapted to deliver only one light spot.
  • the optical element corresponds to a two-dimensional array of micro-lenses LE at the input of which the coherent input light beam R is applied.
  • the array of micro-lenses LE is placed parallel and distant from the information medium M so that light spots are focused on said information medium M.
  • the numerical aperture and quality of the micro-lenses determines the size of the light spots.
  • a two-dimensional array of micro-lenses having a numerical aperture which equals 0.3 can be used.
  • the input light beam R can be realized by a waveguide (not represented) for expanding an input laser beam, or by a two-dimensional array of coupled micro lasers.
  • the optical element corresponds to a two-dimensional array of apertures at the input of which the coherent input light beam R is applied.
  • the apertures correspond for example to circular holes having a diameter of 1 ⁇ m or much smaller.
  • the array of light spots is generated by the array of apertures based on the Talbot effect which is a diffraction phenomenon working as follow.
  • the diffracted lights recombines into identical images of the emitters at a plane located at a predictable distance zO from the diffracting structure.
  • This distance zO is known as the Talbot distance.
  • Exploiting the Talbot effect allows generating an array of light spots of high quality at a relatively large distance from the array of apertures (a few hundreds of ⁇ m, expressed by z(n)), without the need of optical lenses. This allows inserting for example a cover layer between the array of apertures and the information medium for preventing the latter from contamination.
  • the light spots generated by the optical element are then applied on sensitive or nonsensitive marks of the information medium. If a light spot is applied on a non-sensitive mark, no output light beam is generated in response by said mark. If a light spot is applied on a sensitive mark, an output light beam is generated in response by said mark, said output light beam being detected by a detector DT.
  • the detector DT is used for detecting the binary value of the data mark on which the light spot is applied. It is represented in Fig. 1 in the case of an information medium working according to an absorption or transmission mode. Said detector DT is advantageously made of an array of CMOS or CCD sensors. For example, one sensor of the detector is placed opposite an elementary area containing one data (i.e. one bit) of the information carrier. In that case, one sensor of the detector is intended to detect one data of the information carrier. The detector is equipped with an optimized threshold for bit detection. Optionally, a possibly switchable polarizer (not shown) is used in the detection path.
  • an array of micro-lenses (not shown) is placed between the information medium and the detector for focusing the output light beams generated by the information medium on the detector, for improving the detection of the data.
  • the reading device comprises control means CO for controlling the polarization direction of the input light beam R in such a way that the first information layer IL1 is read for a first polarization direction and that the second information layer IL2 is read for a second polarization direction.
  • Said control means CO are, for instance, based on the use of a liquid crystal element that rotated the polarization of the light when a certain voltage is applied. It is also possible to use a retardation plate that is rotated to rotate the polarization of the light.
  • Fig. 2 schematically shows an optical information medium according to the present invention.
  • Each of the three shown information layers IL1, IL2, IL3 comprises a transparent (for instance ITO; further materials are described in International Patent Application IB2004/050825 (PHNL 030640), substrate layer S, electrodes E and a nano- element layer N comprising aligned arrays of nano-elements NE, also called nano-crystals.
  • the nano-elements NE are aligned in axial direction, i.e. in the direction of the radiation beam R, and fixed at the substrate S, which can be realized by proper choosing of the best deposition technique. This is shown for the information layers IL1 and IL3.
  • a cover layer C is provided on top of the upper information layer IL3 .
  • a dielectric layer e.g. of Si0 2 might cover the electrodes in this example.
  • the function of the layer is twofold: firstly, it flattens the substrate, which simplifies the application of bendable elements, and secondly, it acts as insulating barrier between the bendable elements and the electrodes. In this way the bendable elements will be influenced by an electric field only, and not by direct electrical contact with the electrodes.
  • Each information layer IL contains content information 2D-decoded by the presence or absence of nano-elements in certain areas (marks), but generally all (non- addressed) information layers have a low absorption rate for the radiation of the radiation beam, i.e. they are preferably transparent.
  • nano-elements are provided all over the nano-element layer, and the information is 2D-decoded by the bendability or, even more generally, the ability of the nano-elements in certain areas (marks) to change their orientation in response to the application of an electrical field.
  • an electrical field e.g. by putting an electrical potential on the electrodes E of on information layer, as is shown for the middle information layer IL2
  • the nano-elements are forced to bend following the field lines. In that way they are partially and substantially parallel to the polarization axis of the incident radiation (light), and the corresponding absorption can be detected by scanning laterally the light probes over that information layer IL2.
  • There will be also an absorption contrast for unpolarized light which is however smaller.
  • the resulting modulation MO from the "active" information layer IL2 is also shown.
  • R2S2 relatively easy to connect the multi-layer data card to a plurality of electrodes in the card reader taking care of the correct addressing.
  • a transparent cover layer (not shown) at the side of the bendable nano-elements can be provided, such that the nano-elements are present in a cavity.
  • a spacer (not shown) can then be provided between the cover layer and the substrate layer, which spacer may be part of the cover.
  • Suitable covers are glass plates, eventually with cavities, for instance formed by powder blasting, plates of inorganic or organic material or the like.
  • FIG. 3 A preferred electrode structure used in an optical information medium according to the present invention is shown in Fig. 3 for one information layer IL.
  • the electrodes El, E2 are deposited on the substrate S in a comb structure so that large local field strengths at relatively low voltage can be obtained between the neighboring elements of the electrodes El, E2.
  • the resolution/ dimension of the electrodes does not have any influence on the achievable resolution of the optical marks in the information layers. They are independent from each other. Between two electrodes a large number of optical marks could be placed, as schematically shown in Fig. 2.
  • the bendable elements NE are in a first embodiment carbon nanotubes that have been functionalized with Si(OR) 3 groups, wherein R is methyl.
  • Functionalization of carbon nanotubes with suitable end-groups is known per se from Langmuir, vol 16 (2000), pp3569-3573.
  • single walled carbon nanotubes of desired length are suspended with ultrasonification in alcohol.
  • the carbon nanotubes have been given carboxylic end groups by oxidation. This end group is then substituted through chemical reaction with Si(OR) 3 .
  • the substrate is covered with a photoresist, which is developed according to a desired pattern.
  • the photoresist material and substrate are undergoing a plasma treatment process so as to make the substrate more hydrophilic and the photoresist more hydrophobic.
  • a suitable treatment is a sequence of an oxygen plasma treatment, a fluor plasma treatment and an oxygen plasma treatment. Bundles of carbon nanotubes will align along the surface, due to the hydrophobic interactions between the individual carbon nanotubes.
  • a mask of another material may be used to obtain the required pattern. The pattern may also be obtained by burning away carbon nanotubes according to a desired pattern by means for example of a laser bundle having sufficient intensity. In case the applied electric field is zero, i.e.
  • the nano-elements NE are aligned perpendicular to the substrate S.
  • a radiation beam incident on the variable optical component in a direction normal to the substrate surface will pass the multi-layer medium M substantially unhindered as the nano- elements are aligned parallel to the propagation direction of the radiation.
  • the electrical field in a particular information layer is switched on, the nano-elements will bend and become curved elements as shown in fig. 2 for the case of IL2.
  • the curved nano-elements now cover a substantial part of the area in the addressed information layer and absorb a component of the light beam that has a polarization direction parallel to the tangent of the curved nano-elements.
  • the absorption of an incident beam will be maximal if the beam is a linearly polarized beam having its polarization direction tangent to the curved nano-elements.
  • additional polarizer may then be omitted.
  • the nano-elements can be bent by means of an electric field having a strength in the range from 0.1 to 5 V/ ⁇ m.
  • the voltage for generating the electrical field may be a DC voltage.
  • an alternating current with a frequency between a few Hz and some kHz, preferably about 50Hz, can be used.
  • the main steps for manufacturing an optical information medium according to the invention are that after providing electrodes for addressing a first information layer on a substrate layer, an array of nano-elements is pattern deposited on the first information layer, whereafter a cover layer is deposited thereon.
  • Fig. 4 illustrates the steps of a preferred manufacturing method for manufacturing the individual information layers in more detail.
  • the pores are perpendicular to the surface and, the pore diameter is highly uniform and can be varied from about 5 nm up to the ⁇ m-range.
  • the pores can be ordered laterally.
  • Semiconducting wires and carbon nanotubes can be grown inside the pores by the VLS method (typically in the temperature range from 400-800°C), which uses small metal particles as a nucleus for further growth. In principle, when using sufficiently small metal particles the wire diameter can be smaller than the pore diameter.
  • semiconducting wires and metals can be deposited electrochemically at room temperature .
  • an anodised Aluminium oxide template is used on surface and filled with (a little bit) catalyst (such as Au, Fe, Co, Ni) in the pores.
  • anodised Aluminium oxide template can be used on a surface and can be filled electrochemically or via the VLS method by a semiconducting material (such as CdSe, Si, InP). Alternatively also metallic nanowire (e.g.
  • Au or Cu can be grown (electrochemically)
  • the information is transferred to the medium by standard patterning means (such as deposition through a mask, lithographic patterning , e.g. lift-off, printing) of a cover layer.
  • this patterning is done before pore filling, e.g. by a patterned resist layer. It is evident that only the open pores can be filled.
  • the patterned mask can be etched away in the same step as the Aluminum oxide template is removed.
  • the deposition of the catalyst into the pores can be done patterned wise. Further deposition techniques are possible as well. For instance, the information can be burnt in by local oxidizing, or patterned printing of the catalyst before CVD-growth of CNTs will give the same result.
  • an information medium in another particular embodiment, has an electrode configuration that is characterized in that the nano-crystals are bent in one layer in x-direction, whereas in the next layer the nano-crystals are bent in y-direction.
  • absorption of polarized light of such nano-crystals shows strong anisotropy cross-talk in minimized in that way.
  • An additional advantage is the reduced electrical cross-talk (as mentioned above), i.e. the applied electrical field in a first layer will less influence the neighboring layer .
  • FIG. 5 shows a possible layout of an optical card according to the invention.
  • Fig. 5a shows a top view
  • fig. 5b shows a side view.
  • the optical card has contacts CT (a to h in this example) at the top that are connected to the electrodes E of the individual information layers IL and are used to address a specific information layer.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Optical Recording Or Reproduction (AREA)

Abstract

L'invention porte sur un support d'informations optique destiné à stocker des informations, qui comprend au moins deux couches d'informations adressables individuellement ('information layers' ou IL) comprenant chacune: une couche substrat transparente (S), une couche de nano-éléments (NE) comprenant un réseau de nano-éléments alignés de manière sensiblement perpendiculaire à la couche substrat, et des électrodes (E) permettant de fournir un ou plusieurs champs électriques dans une direction sensiblement parallèle à la couche substrat afin de modifier l'orientation desdits nano-éléments et, par conséquent, modifier le profil de transmission desdits nano-éléments.
PCT/IB2005/051890 2004-06-15 2005-06-09 Support d'informations optique multicouche WO2005124751A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04102718.6 2004-06-15
EP04102718 2004-06-15

Publications (1)

Publication Number Publication Date
WO2005124751A1 true WO2005124751A1 (fr) 2005-12-29

Family

ID=34970179

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2005/051890 WO2005124751A1 (fr) 2004-06-15 2005-06-09 Support d'informations optique multicouche

Country Status (2)

Country Link
TW (1) TW200617939A (fr)
WO (1) WO2005124751A1 (fr)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000019939A (ja) * 1998-07-01 2000-01-21 Nippon Telegr & Teleph Corp <Ntt> 多重ホログラム記録層選択読み取り方法及び装置
WO2000048175A1 (fr) * 1999-02-12 2000-08-17 Tri D Store Ip, L.L.C. Support optique multicouche de stockage d'information base sur un signal non coherent
US20030021966A1 (en) * 2001-07-25 2003-01-30 Segal Brent M. Electromechanical memory array using nanotube ribbons and method for making same
EP1341183A1 (fr) * 2002-02-25 2003-09-03 STMicroelectronics S.r.l. Mémoire moléculaire optiquement lisible réalisée avec l'aide de nanotubes à carbone et procédé pour la mémorisation d'information dans cette mémoire moléculaire
WO2004023466A1 (fr) * 2002-09-06 2004-03-18 Koninklijke Philips Electronics N.V. Porteuse optique a piles multiples
WO2004053860A1 (fr) * 2002-12-10 2004-06-24 Koninklijke Philips Electronics N.V. Support d'enregistrement d'informations optique
WO2004109373A1 (fr) * 2003-06-04 2004-12-16 Koninklijke Philips Electronics N.V. Systeme comportant un dispositif electronique et son procede de fonctionnement

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000019939A (ja) * 1998-07-01 2000-01-21 Nippon Telegr & Teleph Corp <Ntt> 多重ホログラム記録層選択読み取り方法及び装置
WO2000048175A1 (fr) * 1999-02-12 2000-08-17 Tri D Store Ip, L.L.C. Support optique multicouche de stockage d'information base sur un signal non coherent
US20030021966A1 (en) * 2001-07-25 2003-01-30 Segal Brent M. Electromechanical memory array using nanotube ribbons and method for making same
EP1341183A1 (fr) * 2002-02-25 2003-09-03 STMicroelectronics S.r.l. Mémoire moléculaire optiquement lisible réalisée avec l'aide de nanotubes à carbone et procédé pour la mémorisation d'information dans cette mémoire moléculaire
WO2004023466A1 (fr) * 2002-09-06 2004-03-18 Koninklijke Philips Electronics N.V. Porteuse optique a piles multiples
WO2004053860A1 (fr) * 2002-12-10 2004-06-24 Koninklijke Philips Electronics N.V. Support d'enregistrement d'informations optique
WO2004109373A1 (fr) * 2003-06-04 2004-12-16 Koninklijke Philips Electronics N.V. Systeme comportant un dispositif electronique et son procede de fonctionnement

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 04 31 August 2000 (2000-08-31) *

Also Published As

Publication number Publication date
TW200617939A (en) 2006-06-01

Similar Documents

Publication Publication Date Title
EP0381158B1 (fr) Dispositif de mémoire
US7826174B2 (en) Information recording method and apparatus using plasmonic transmission along line of ferromagnetic nano-particles with reproducing method using fade-in memory
EP0412850B1 (fr) Substrat pour milieu d&#39;enregistrement, milieu d&#39;enregistrement, méthode pour la fabrication d&#39;un tel dispositif d&#39;enregistrement et de reproduction et méthode d&#39;enregistrement, de reproduction et d&#39;effacement utilisant un tel dispositif
EP1195757B1 (fr) Support d&#39;enregistrement optique avec une couche en structure super-résolution utilisant une lumière de champ proche
JP2602608B2 (ja) 光データ記憶装置
JP2011210363A (ja) データ記憶のための機器
JP2004071038A (ja) 情報記録媒体、情報記録方法、情報再生方法
JP2001101708A (ja) 記録媒体、記録装置および記録方法
CN101635147B (zh) 信号检测装置和信号检测方法
US20060284162A1 (en) Programmable optical component for spatially controlling the intensity of beam of radiation
JP2709651B2 (ja) 改良型の表面強調ラマン光学的データ格納装置
KR20050089816A (ko) 광학 정보 기록 매체
US6125095A (en) Luminescent recording layer holding a plurality of positive or negative charges
US20020080710A1 (en) High speed/high density optical storage system using one-dimensional multi-function/multiple probe columns
US6807138B1 (en) Light drive
WO2005124751A1 (fr) Support d&#39;informations optique multicouche
JP2005127982A (ja) 電位差を利用した光ファイバ探針及びこれを利用した光記録再生装置
TWI351695B (en) Molecular optoelectronic memory device
US20090080297A1 (en) Frequency-modulated coding and data recording and storage using plasmonic nanostructures
JP4169466B2 (ja) 記録再生方法及び記録再生装置
JP2002109769A (ja) 半導体レーザを搭載した高機能・高密度光学ヘッド
JP4453216B2 (ja) 情報記録媒体及び情報再生装置
JP3731637B2 (ja) 光磁気ディスク用メモリヘッド
JP4586180B2 (ja) 情報再生装置及び方法
JP2004213702A (ja) 光情報記録装置、光情報記録媒体及び平面型プローブアレイの製造方法

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KM KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NG NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SM SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): BW GH GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: DE

WWW Wipo information: withdrawn in national office

Country of ref document: DE

122 Ep: pct application non-entry in european phase