WO2005120135A1 - Electroluminescent structure and led with an el structure - Google Patents
Electroluminescent structure and led with an el structure Download PDFInfo
- Publication number
- WO2005120135A1 WO2005120135A1 PCT/IB2005/051778 IB2005051778W WO2005120135A1 WO 2005120135 A1 WO2005120135 A1 WO 2005120135A1 IB 2005051778 W IB2005051778 W IB 2005051778W WO 2005120135 A1 WO2005120135 A1 WO 2005120135A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- sio
- segments
- electroluminescent structure
- blend
- Prior art date
Links
- 239000000203 mixture Substances 0.000 claims abstract description 30
- 239000003086 colorant Substances 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 20
- 229910017623 MgSi2 Inorganic materials 0.000 claims description 12
- 229910052909 inorganic silicate Inorganic materials 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 7
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- 238000004924 electrostatic deposition Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 239000011230 binding agent Substances 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
Definitions
- the invention relates to an electroluminescent (EL) structure, particularly a light- emitting diode (LED) with an EL structure.
- EL electroluminescent
- LED light- emitting diode
- Light from a LED can be partially converted by means of phosphor conversion to generate a mixed color or a white color by conversion of a lower energy color than the pure LED.
- the phosphor conversion has the drawback that it is not possible to tune the resulting color, because the phosphor has a fixed emission characteristic.
- WO97/48138 discloses visible light-emitting devices including UV light- emitting diodes and UV-excitable visible light-emitting phosphors.
- an epitaxial buffer-contact layer of n+ GaN is located on a single crystal substrate, on which layer the LED structure including the following epitaxial layers is arranged in sequence: a lower cladding layer of n AlGaN, an active region i GaN, and an upper cladding layer of p AlGaN.
- a p+ GaN contact layer is provided on top of this LED structure, while a semi-transparent contact layer of, for example, an Au/Ni alloy, and a voltage electrode, with a phosphor layer of a UV-excitable phosphor on the contact layer metallization layers of, for example, Al are provided on the surface buffer/contact layer on either side of the LED structure.
- a further layer provides grounding via a grounding electrode, while another layer serves as an addressing electrode.
- WO97/48138 mentions as typical UV-excitable phosphors which may be used for the LED: red: Y 2 O 2 S:Eu green: ZnS:Cu,Ag,Au blue: BaMgAlj 0 Oj :Eu
- the visible light-emitting device of WO 97/48138 as a whole is tunable, because the color that is actually emitted is composed of red, green and blue.
- three UV light-emitting diodes, each provided with one of three different UV light-excitable phosphors with the characteristics red, blue or green, respectively, have to be handled and controlled.
- the object is achieved by an electroluminescent structure on a substrate layer with at least one emissive layer and one charge injection and/or transportation layer arranged on a back electrode, wherein
- the top layer of the electroluminescent structure comprises two or more separate segments; - at least one of the two or more separate segments has a top electrode as front contact to be driven individually, and
- At least one of the two or more separate segments has a phosphorescent blend on its surface, the phosphorescent blend being excitable by the light emitted by the emissive layer.
- the EL structure comprises three separate segments.
- This arrangement has a single back electrode, which serves as common back electrode for either of the two or more top electrodes.
- the common back electrode may either be connected to ground or arranged as a floating electrode.
- This EL structure may be arranged on a single chip.
- the phosphorescent blend may consist of a single phosphor or a two- component phosphor blend.
- the emissive layer emits blue light with a wavelength of ⁇ 430 nm to ⁇ 485 nm
- the single phosphor or two-component phosphor blend is selected from the group consisting of: a) (Y 1-x Gd x ) 3 (Al 1 . y Ga y ) 5 O 12 :Ce b) (Sn -x Ca x ) 2 SiO 4 :Eu c) (Y 1-x Gd x ) 3 (Alj.
- the electroluminescent structure has an emissive layer that emits ultraviolet light with a wavelength of ⁇ 370 nm to ⁇
- the single phosphor or two-component phosphor blend is selected from the group consisting of m) BaMgAl 10 O ⁇ 7 :Eu + (Sr 1-z Ca z ) 2 SiO 4 :Eu n) BaMgAlj 0 Oi 7 :Eu + (Sr 1-z Ca z )Si 2 N 2 O 2 :Eu + (Sr, -z-y Ca z Ba y ) 2 Si 5 N 8 :Eu o) BaMgAli 0 Oj 7 :Eu + (Srj -z Ca z )Si 2 N 2 O 2 :Eu + (Sr, -z Ca z )S:Eu p) BaMgAli 0 Oj 7 :Eu + (Ba, -z Sr z )SiO 4 :Eu + (Sr 1-2-y Ca 2 Ba y ) 2 Si 5 N 8 :Eu m
- the phosphorescent blend may be deposited directly or indirectly on top of the emissive layer by using electrostatic deposition.
- the structured application of the different phosphors can be realized by biasing every one of the different segments in such a way that the corresponding phosphorescent blend is being deposited or is independent of the bias applied.
- Further deposition methods may be electrostatic deposition, use of ceramic phosphorous dices, ink-jetting of suspensions, dispensing of mixtures of phosphorous blends and binder or carrier polymers.
- the electroluminescent structure may be part of an electroluminescent arrangement, which further comprises one voltage or current source, either for all of the front contacts or for every single front contact, and a controlling unit for individually driving the front contacts.
- the three components green, red and blue can be mixed by individually driving the front contacts.
- the mixed light may have different portions of the components red, green and blue and is thus tunable.
- other or further components such as amber may be selected.
- a light-emitting diode with the electroluminescent structure generates a tunable visible light, but is still easy to handle, because only one back electrode has to be contacted.
- One advantage of the electroluminescent structure is that it may be arranged on a single chip, which has defined operating conditions.
- the electroluminescent structure may be used as a light source or as a lamp and has the advantage of a relatively low heat emission.
- the object is achieved by the steps of - providing an electroluminescent arrangement with a structured surface comprising two or more segments, wherein a different phosphorescent blend is deposited on at least one of the two or more segments, and
- Figure 1 is a perspective side view of a schematic EL structure with an ultraviolet light-emitting layer
- Figure 2 is a perspective side view of a schematic EL structure with a blue light-emitting layer
- Figure 3 is a cross-sectional view of a schematic ultraviolet light-emitting LED
- Figure 4 is a cross-sectional view of a schematic blue light-emitting LED.
- Figure 1 is a perspective side view of a schematic EL structure with an emissive layer 1 emitting ultraviolet light.
- the emissive layer 1 is provided with a back electrode 2 which, in this illustration, is arranged on top of the emissive layer 1, but may alternatively be arranged underneath the emissive layer as a further layer covering at least the area that is covered by the three segments of phosphorescent blends PI, P2, P3.
- Each phosphorescent blend PI, P2 and P3 is connected to a corresponding top voltage electrode 3, 4 or 5.
- FIG 2 is a perspective side view of a schematic EL structure as described with reference to Figure 1 , but with the difference that the emissive layer 6 emits blue light. This means that one of the three segments of the surface of the emissive layer may not be covered with a material that changes the wavelength, but with any transparent material or none at all.
- Figure 3 is a cross-sectional view of a schematic LED with a layer 1 emitting ultraviolet light and comprising three segments SI, S2 and S3 on its top surface. As illustrated, the phosphorous blends PI, P2 and P3 are deposited on the top surface of each segment SI, S2 and S3, but may also be deposited on the side walls.
- the back electrode 2 is connected to a non-insulated layer 7.
- Layer 7 preferably reflects light emitted by the emissive layer 1 in order to increase the amount of light rays, which reach and pass the phosphorescent blends.
- the substrate 8 on which the EL structure is arranged may be an InGaN-substrate.
- Figure 4 is a cross-sectional view of a schematic LED as described with reference to Figure 3, but with the difference that the emissive layer 6 emits blue light. This means that one of the three segments of the surface of the emissive layer is not covered with a material that changes the wavelength, but with any transparent material.
- the invention relates to an EL structure with a single ultraviolet or blue light-emitting layer that is connected to a back electrode.
- the top surface comprises three separate segments for the primary colors red, green and blue.
- Another single phosphorescent blend or a two-component phosphorescent blend is deposited on at least two of the three segments.
- Each of the three segments can be individually driven by a corresponding top electrode.
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/569,716 US20070252512A1 (en) | 2004-06-04 | 2005-06-01 | Electroluminescent Structure and Led with an El Structure |
KR1020077000228A KR101303372B1 (en) | 2004-06-04 | 2005-06-01 | Electroluminescent structure and led with an el structure |
DE602005022067T DE602005022067D1 (en) | 2004-06-04 | 2005-06-01 | ELECTROLUMINESCENCE STRUCTURE AND LED WITH AN EL STRUCTURE |
EP05742790A EP1757170B1 (en) | 2004-06-04 | 2005-06-01 | Electroluminescent structure and led with an el structure |
CN2005800181932A CN1965614B (en) | 2004-06-04 | 2005-06-01 | Electroluminescent structure and LED with an EL structure |
JP2007514309A JP2008502102A (en) | 2004-06-04 | 2005-06-01 | LED having electroluminescent structure and EL structure |
AT05742790T ATE472927T1 (en) | 2004-06-04 | 2005-06-01 | ELECTROLUMINESCENCE STRUCTURE AND LED WITH AN ELECTRIC STRUCTURE |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04102534 | 2004-06-04 | ||
EP04102534.7 | 2004-06-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005120135A1 true WO2005120135A1 (en) | 2005-12-15 |
Family
ID=34970300
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2005/051778 WO2005120135A1 (en) | 2004-06-04 | 2005-06-01 | Electroluminescent structure and led with an el structure |
Country Status (9)
Country | Link |
---|---|
US (1) | US20070252512A1 (en) |
EP (1) | EP1757170B1 (en) |
JP (1) | JP2008502102A (en) |
KR (1) | KR101303372B1 (en) |
CN (1) | CN1965614B (en) |
AT (1) | ATE472927T1 (en) |
DE (1) | DE602005022067D1 (en) |
TW (1) | TWI462323B (en) |
WO (1) | WO2005120135A1 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1780805A1 (en) * | 2004-06-30 | 2007-05-02 | Mitsubishi Chemical Corporation | Light emitting device and illuminator employing it, back light for display, and display |
CN101740600A (en) * | 2008-11-18 | 2010-06-16 | Lg伊诺特有限公司 | Semiconductor light emitting device and led package having the same |
KR100974049B1 (en) | 2006-06-07 | 2010-08-04 | 가부시키가이샤 히타치세이사쿠쇼 | Illuminating device and display device |
US8172415B2 (en) | 2007-05-24 | 2012-05-08 | Koninklijke Philips Electronics N.V. | Color-tunable illumination system |
US8337031B2 (en) | 2007-06-04 | 2012-12-25 | Koninklijke Philips Electronics N.V. | Color-tunable illumination system, lamp and luminaire |
EP2002176B1 (en) * | 2006-03-31 | 2020-04-29 | OSRAM Opto Semiconductors GmbH | Optoelectronic headlight |
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DE102008022542A1 (en) * | 2008-05-07 | 2009-11-12 | Osram Opto Semiconductors Gmbh | Radiation-emitting component for use in illumination device, has conversion layers including conversion elements for converting portions of primary radiation sent by LED chip into secondary radiation, respectively |
WO2010020068A1 (en) * | 2008-08-19 | 2010-02-25 | Lattice Power (Jiangxi) Corporation | Semiconductor light-emitting devices for generating arbitrary color |
WO2010151600A1 (en) | 2009-06-27 | 2010-12-29 | Michael Tischler | High efficiency leds and led lamps |
DE102009037186A1 (en) | 2009-08-12 | 2011-02-17 | Osram Opto Semiconductors Gmbh | Radiation-emitting semiconductor component |
US8653539B2 (en) | 2010-01-04 | 2014-02-18 | Cooledge Lighting, Inc. | Failure mitigation in arrays of light-emitting devices |
US9480133B2 (en) | 2010-01-04 | 2016-10-25 | Cooledge Lighting Inc. | Light-emitting element repair in array-based lighting devices |
JP5512888B2 (en) | 2010-06-29 | 2014-06-04 | クーレッジ ライティング インコーポレイテッド | Electronic device with flexible substrate |
DE102012208900A1 (en) * | 2012-05-25 | 2013-11-28 | Osram Opto Semiconductors Gmbh | Method for producing optoelectronic components and apparatus for producing optoelectronic components |
US8877561B2 (en) | 2012-06-07 | 2014-11-04 | Cooledge Lighting Inc. | Methods of fabricating wafer-level flip chip device packages |
KR102083980B1 (en) | 2013-06-25 | 2020-03-04 | 삼성디스플레이 주식회사 | Organic light emitting device for image and security pattern output, and display panel comprising the same |
US10026864B2 (en) * | 2016-02-13 | 2018-07-17 | Black Peak LLC | Package-less LED assembly and method |
CN112117296B (en) * | 2020-10-22 | 2021-07-13 | 厦门强力巨彩光电科技有限公司 | LED display panel and LED display device |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0972815A1 (en) * | 1997-03-26 | 2000-01-19 | Zhiguo Xiao | Silicate phosphor with a long afterglow and manufacturing method thereof |
WO2001029909A1 (en) * | 1999-10-15 | 2001-04-26 | Cambridge Display Technology Limited | Light-emitting devices |
EP1104799A1 (en) * | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Red emitting luminescent material |
US20020003233A1 (en) * | 1999-09-27 | 2002-01-10 | Mueller-Mach Regina B. | Light emitting diode (LED) device that produces white light by performing phosphor conversion on all of the primary radiation emitted by the light emitting structure of the LED device |
US6357889B1 (en) * | 1999-12-01 | 2002-03-19 | General Electric Company | Color tunable light source |
US6366018B1 (en) * | 1998-10-21 | 2002-04-02 | Sarnoff Corporation | Apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
US20020074558A1 (en) * | 2000-12-04 | 2002-06-20 | Toshio Hata | Nitride type compound semiconductor light emitting element |
US20040062699A1 (en) * | 2002-09-25 | 2004-04-01 | Matsushita Electric Industrial Co. | Inorganic oxide and phosphor |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2795932B2 (en) * | 1989-11-09 | 1998-09-10 | 出光興産株式会社 | Electroluminescence element |
JP2836186B2 (en) * | 1990-05-15 | 1998-12-14 | ジェイエスアール株式会社 | Thermoplastic elastomer composition |
JPH05299175A (en) * | 1992-04-24 | 1993-11-12 | Fuji Xerox Co Ltd | El luminescence element |
JPH08250281A (en) * | 1995-03-08 | 1996-09-27 | Olympus Optical Co Ltd | Luminescent element and displaying apparatus |
US6091195A (en) * | 1997-02-03 | 2000-07-18 | The Trustees Of Princeton University | Displays having mesa pixel configuration |
JPH11195489A (en) * | 1997-12-26 | 1999-07-21 | Kansai Shingijutsu Kenkyusho:Kk | El-pl composite element |
JP4514841B2 (en) * | 1998-02-17 | 2010-07-28 | 淳二 城戸 | Organic electroluminescent device |
US6384529B2 (en) * | 1998-11-18 | 2002-05-07 | Eastman Kodak Company | Full color active matrix organic electroluminescent display panel having an integrated shadow mask |
US6373188B1 (en) * | 1998-12-22 | 2002-04-16 | Honeywell International Inc. | Efficient solid-state light emitting device with excited phosphors for producing a visible light output |
US6366025B1 (en) * | 1999-02-26 | 2002-04-02 | Sanyo Electric Co., Ltd. | Electroluminescence display apparatus |
JP2002324676A (en) * | 2001-04-26 | 2002-11-08 | Konica Corp | Organic electroluminescent element, light emitting source, lighting device, display device and light-emission method |
DE10129068A1 (en) * | 2001-06-15 | 2002-12-19 | Bosch Gmbh Robert | Method to regulate and/or control clutch slip esp. of continuously variable transmissions with measuring of actual drive and driven speeds, and corrected speeds determined to allow for measuring faults |
JP4496684B2 (en) * | 2001-07-30 | 2010-07-07 | コニカミノルタホールディングス株式会社 | Organic electroluminescence device |
WO2004020549A1 (en) * | 2002-08-27 | 2004-03-11 | Fujitsu Limited | Organometallic complexes, organic el devices, and organic el displays |
US7515122B2 (en) * | 2004-06-02 | 2009-04-07 | Eastman Kodak Company | Color display device with enhanced pixel pattern |
-
2005
- 2005-06-01 WO PCT/IB2005/051778 patent/WO2005120135A1/en active Application Filing
- 2005-06-01 JP JP2007514309A patent/JP2008502102A/en active Pending
- 2005-06-01 CN CN2005800181932A patent/CN1965614B/en active Active
- 2005-06-01 US US11/569,716 patent/US20070252512A1/en not_active Abandoned
- 2005-06-01 EP EP05742790A patent/EP1757170B1/en active Active
- 2005-06-01 KR KR1020077000228A patent/KR101303372B1/en active IP Right Grant
- 2005-06-01 DE DE602005022067T patent/DE602005022067D1/en active Active
- 2005-06-01 AT AT05742790T patent/ATE472927T1/en not_active IP Right Cessation
- 2005-06-02 TW TW094118211A patent/TWI462323B/en active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0972815A1 (en) * | 1997-03-26 | 2000-01-19 | Zhiguo Xiao | Silicate phosphor with a long afterglow and manufacturing method thereof |
US6366018B1 (en) * | 1998-10-21 | 2002-04-02 | Sarnoff Corporation | Apparatus for performing wavelength-conversion using phosphors with light emitting diodes |
US20020003233A1 (en) * | 1999-09-27 | 2002-01-10 | Mueller-Mach Regina B. | Light emitting diode (LED) device that produces white light by performing phosphor conversion on all of the primary radiation emitted by the light emitting structure of the LED device |
WO2001029909A1 (en) * | 1999-10-15 | 2001-04-26 | Cambridge Display Technology Limited | Light-emitting devices |
EP1104799A1 (en) * | 1999-11-30 | 2001-06-06 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Red emitting luminescent material |
US6357889B1 (en) * | 1999-12-01 | 2002-03-19 | General Electric Company | Color tunable light source |
US20020074558A1 (en) * | 2000-12-04 | 2002-06-20 | Toshio Hata | Nitride type compound semiconductor light emitting element |
US20040062699A1 (en) * | 2002-09-25 | 2004-04-01 | Matsushita Electric Industrial Co. | Inorganic oxide and phosphor |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1780805A1 (en) * | 2004-06-30 | 2007-05-02 | Mitsubishi Chemical Corporation | Light emitting device and illuminator employing it, back light for display, and display |
EP1780805A4 (en) * | 2004-06-30 | 2013-02-20 | Mitsubishi Chem Corp | Light emitting device and illuminator employing it, back light for display, and display |
EP2002176B1 (en) * | 2006-03-31 | 2020-04-29 | OSRAM Opto Semiconductors GmbH | Optoelectronic headlight |
KR100974049B1 (en) | 2006-06-07 | 2010-08-04 | 가부시키가이샤 히타치세이사쿠쇼 | Illuminating device and display device |
US8172415B2 (en) | 2007-05-24 | 2012-05-08 | Koninklijke Philips Electronics N.V. | Color-tunable illumination system |
US8337031B2 (en) | 2007-06-04 | 2012-12-25 | Koninklijke Philips Electronics N.V. | Color-tunable illumination system, lamp and luminaire |
CN101740600A (en) * | 2008-11-18 | 2010-06-16 | Lg伊诺特有限公司 | Semiconductor light emitting device and led package having the same |
Also Published As
Publication number | Publication date |
---|---|
CN1965614B (en) | 2010-06-09 |
KR20070042960A (en) | 2007-04-24 |
EP1757170A1 (en) | 2007-02-28 |
KR101303372B1 (en) | 2013-09-03 |
EP1757170B1 (en) | 2010-06-30 |
DE602005022067D1 (en) | 2010-08-12 |
TW200603447A (en) | 2006-01-16 |
CN1965614A (en) | 2007-05-16 |
US20070252512A1 (en) | 2007-11-01 |
TWI462323B (en) | 2014-11-21 |
ATE472927T1 (en) | 2010-07-15 |
JP2008502102A (en) | 2008-01-24 |
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