WO2005117158A1 - Diode electroluminescente et son procede de production - Google Patents

Diode electroluminescente et son procede de production Download PDF

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Publication number
WO2005117158A1
WO2005117158A1 PCT/EP2004/005432 EP2004005432W WO2005117158A1 WO 2005117158 A1 WO2005117158 A1 WO 2005117158A1 EP 2004005432 W EP2004005432 W EP 2004005432W WO 2005117158 A1 WO2005117158 A1 WO 2005117158A1
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WO
WIPO (PCT)
Prior art keywords
light
layer
emitting diode
recess
substrate
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PCT/EP2004/005432
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German (de)
English (en)
Inventor
Jörg AMELUNG
Karl Leo
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
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Priority to DE112004002833T priority Critical patent/DE112004002833A5/de
Priority to PCT/EP2004/005432 priority patent/WO2005117158A1/fr
Publication of WO2005117158A1 publication Critical patent/WO2005117158A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/179—Interconnections, e.g. wiring lines or terminals
    • H10K59/1795—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance

Definitions

  • the present invention relates to a light-emitting diode and a method for producing a light-emitting diode, and in particular to light-emitting diodes with organic light emission layers.
  • Displays or displays or even color displays or color displays are increasingly being used to improve communication between people and machines.
  • the displays are replacing the monitors used until a few years ago in so-called desktop applications, but are also increasingly being used in portable devices, such as. B. mobile phones or PDAs.
  • the displays are based on a formation of LEDs arranged in a matrix. Due to the increasing mass use of displays, there is a need to simplify the process for producing light-emitting diodes, which form the basis of the displays.
  • Organic light-emitting diodes are a special form of light-emitting diodes.
  • One possible way of production is based on the use of polymers. These are often applied as solutions.
  • the structuring is carried out using a printing process such as an ink jet. This organic light emitting diodes are characterized by a short lifespan.
  • shadow masks are used to manufacture light-emitting diodes based on vapor-deposited materials.
  • these shadow masks are unfavorable for the production of displays with larger dimensions, since they tend to warp.
  • the masks become clogged with dyes, which precludes an economical industrial manufacturing process.
  • the inaccuracy in the geometric arrangement of the shadow masks limits the resolution behavior of the displays produced with them.
  • No. 5,917,280 A explains an arrangement of stacked OLEDs and how the potentials for controlling the light-emitting layers are to be set.
  • the present invention has for its object to provide a light emitting diode and a method for producing a light emitting diode, wherein the light emitting diode can be contacted better and manufactured more easily.
  • the present invention provides a light-emitting diode with the following features: a substrate, a multilayer arrangement which is arranged on the substrate and in which a recess is formed, and an organic light emission layer which is arranged in the recess, the multilayer arrangement having a contact layer which extends up to or into the recess and is electrically conductively connected to the OLED or optical light-emitting diode.
  • the main idea of the present invention is to form recesses in a multilayer arrangement arranged on a substrate, which comprises a contact layer, so that the contact layer extends as far as or into the recess.
  • a subsequent vapor deposition process with an organic light emission layer in order to form the organic light emission layer this is simultaneously connected in an electrically conductive manner to the contact layer, the borders of the recesses functioning as a mask.
  • An advantage of the present invention is that a shadow mask is no longer required to produce an array of light-emitting diodes, but the application such. B. Evaporation can take place over the entire area, since the multilayer arrangement functions as a shadow mask.
  • the contact layer is part of the multilayer arrangement arranged on the substrate, the manufacturing process for a light-emitting diode is simplified.
  • the invention enables a plurality of OLEDs of different primary colors to be layered on top of one another in a recess, as a result of which the resolution of a display formed from these OLEDs is increased.
  • Another advantage of the present invention is that by concentrating a large number of pixels on a predetermined area, good material utilization can be achieved.
  • the saving of the shadow mask critical for the manufacturing process enables an increase in the yield of the manufactured light-emitting diodes and thus an improved economy of the manufacturing process.
  • Another advantage of the present invention is that a light emission layer can cover the entire recess and thus covers the area of an entire pixel. Due to the good use of space, a lower current density is required, which results in a longer lifespan for the LED.
  • Another advantage of the present invention results from the fact that an OLED using the entire superpixel area, a superpixel preferably comprising 3 subpixels, results in a good aspect ratio, which has a positive effect on the contrast of a display constructed from the light-emitting diodes of the present invention. Therefore, since the contact layer of the light-emitting diode of the present invention in the multilayer arrangement can be isolated well from a contact layer of an adjacent light-emitting diode, the crosstalk between two neighboring pixels is reduced.
  • the multilayer arrangement can be manufactured inexpensively by conventional semiconductor manufacturing processes, so that an array can be formed, for example, from a wafer.
  • FIG. 1 a shows a sectional view of a light-emitting diode with three light emission layers, which emits light away from the substrate above according to an embodiment of the present invention
  • Fig. Lb is a schematic plan view of the light emitting diode of Fig. La;
  • FIG. 2 shows a sectional view of a light-emitting diode that emits the light downward through the substrate according to an exemplary embodiment of the present invention
  • FIG. 3 shows a sectional view of a light-emitting diode which emits light both upwards away from the substrate and downwards through the substrate according to an exemplary embodiment of the present invention
  • 4 is a sectional view of an alternative embodiment of a light emitting diode according to the present invention that emits light upward; 5 shows a sectional view of a light-emitting diode with three light emission layers and insulation edges according to an exemplary embodiment of the present invention;
  • Figure 6 shows an array comprising a plurality of light emitting diodes in accordance with the present invention.
  • Fig. 7 is a flowchart of a manufacturing method of a light emitting diode according to the present invention.
  • the light-emitting diode essentially comprising a substrate 1, a multilayer arrangement 3 which is arranged on the substrate 1, and an OLED which is in a recess 5 of the multilayer arrangement 3 is formed, composed.
  • the multilayer arrangement 3 comprises four metal levels 3a, 3b, 3c and 3d, which are separated from one another by insulation layers 51, 61 and 71 and are closed off by an insulation layer 81.
  • the layer sequence of the insulation layers 51-81 is structured to form the recess 5.
  • the lowermost metal level 3a is formed on the substrate 1 and is structured to form a lower electrode 16 and conductor tracks 18 and 20.
  • the lower electrode 16 is structured such that it extends into the multilayer arrangement 3 over the entire cross section of the recess 5 and a little further.
  • the lower electrode 16 is preferably designed as a conductor track over an OLED stack arranged in a row if it is part of an active matrix display, the latter Execution is explained in detail later.
  • the metal planes 3b-3d lying above are structured to form contact layers 21, 31 and 41, respectively.
  • the contact layers 21, 31 and 41 are formed such that they laterally completely surround the recess 5 and extend a little from the arrangement 3 into the recess 5 in order to protrude into the same.
  • Vias are provided to connect the contact layers 21, 31 and 41 to one of the conductor tracks 18 and 20 in the metal plane 3a on the substrate 1, only one contact layer 21 with the conductor track 18 in the sectional view of FIG connecting via 6 and a via 11 connecting conductor track 20 to contact layer 31 are shown.
  • the OLED in the recess 5 is formed by a layer stack within the recess 5.
  • This layer stack comprises an organic light emission layer 91 extending laterally over the entire cross section of the recess 5, an electrode layer 101 arranged thereon, a further organic light emission layer 111 arranged on the electrode layer 101, an electrode layer 121 arranged on the further light emission layer 111, and finally one organic light emission layer 131 arranged on the electrode layer 121, on which in turn an electrode layer 141 is arranged. All layers 91-141 of the OLED extend over the entire cross section of the recess 5 in the order mentioned.
  • the electrode layers 101, 121 and 141 are such as to the contact layers 21, 31 and 41, which yes are in the recess 5 extend into, aligned so that the electrode layer 101 is contacted by the contact layer 21, the electrode layer 121, by the contact layer 31 and the electrode layer 141 by the contact layer 41 or adjoin one another, while the organic light emission layers 91, 111 and 131 in the thickness direction between the metal levels 3a - 3d are arranged.
  • FIG. 1b shows a top view of the light-emitting diode from FIG. La, but all the layers 91-141 forming the OLED in the recess 5 have not been shown for better illustration.
  • the cross section of the recess 5 in the exemplary embodiment has a rectangular outline 191, although other shapes would also be possible.
  • the uppermost of the contact layers 21, 31 and 41 protruding into the recess 5, namely the contact layer 41, can also be seen, which also has a rectangular outline 201 which is somewhat smaller than the outline 191 of the recess 5, as it is is defined by the insulation layers 51-81.
  • a conductor track 19 is also shown in this FIG. 1 b, which likewise runs in the level 3 a of the multilayer structure 3 like the conductor tracks 18 and 20, and does not include the latter cuts.
  • a via 16 connecting the conductor track 19 with the electrode 41 is also shown in FIG. 1b.
  • Fig. Lb shows a series of hidden edges, which are drawn with dashed lines.
  • the edges 21, 31, 41 are drawn apart for better representation. poses, although in reality they lie directly one above the other and therefore also hide each other.
  • the contact layers 41, 31, 21 each protrude into the electrode layers in order to achieve a uniform separation of the organic layers 101, 121, 141.
  • the first insulation layer 51 electrically separates the first contact layer 21 from the substrate 1.
  • the second insulation layer 61 insulates the third contact layer 31 from the second contact layer 21, while the third insulation layer 71 is responsible for the insulation of the fourth contact layer 41 from the third contact layer 31.
  • the fourth insulation layer 81 is responsible for the electrical shielding of the third contact layer 41 from the surroundings of the light-emitting diode.
  • the charge carriers of the first electrode layer 16 and the second electrode layer 101 recombine when a voltage is applied between them in the first OLED layer 91.
  • a result of this recombination process is the light beam 151, which is red, for example.
  • the charge carriers from the second electrode layer 101 and the third electrode layer 121 which recombine in the second OLED layer 111.
  • the charge carriers from the third electrode layer 121 and the fourth electrode layer 141 recombine in the third OLED layer 131 and produce the light beam 171, which is blue here, for example.
  • the arrangement of the OLED layers is advantageously carried out so that the light beam, which is composed of photons with the lowest energy, passes through most layers, while the light beam, which is composed of photons with the highest energy, passes through the fewest layers with it Photoemission no other colors are generated.
  • the light-emitting diode there is a sequence of the first OLED layer 91, which generates red light with the lowest photon energy, then the second OLED layer 111, which generates green light with medium photon energy, and finally the third OLED Layer 131 that produces blue light from the highest photon energy.
  • the blue light beam 171 which is composed of photons of the highest energy, passes through the least number of layers.
  • the primary colors red, green and blue are generated in the OLED layers 91, 111, 131.
  • a suitable mixture of light from these three color components can be used to create any color in the visible spectrum.
  • the electrodes 101, 121, 141 are transparent so that the light beams generated in the OLED layers 91, 111, 131 can penetrate them in the desired direction of radiation.
  • edges of the recess 191 serve to limit the surfaces of the OLED layers 91, 111, 131, for example, as a result of which the shadow masks, which are particularly critical in the production of larger displays with a large number of light-emitting diodes, can be replaced ,
  • the OLED of FIGS. 1 a and 1 b could be part of an active matrix display. Then only one contact layer 21, 31, 41 or electrode 16 of a row of OLEDs could be controlled by a common interconnect in plane 3a on the substrate. Accordingly, all pixels can be controlled, so that suitable voltages drop across the organic layers, so that the desired color mixture results.
  • FIG. 2 shows a further light-emitting diode according to an exemplary embodiment of the present invention.
  • the substrate 1 is made translucent at least partially in the area in which the light rays 151, 161, 171 pass through the substrate 1, while the substrate 1 in FIG. 1 a is opaque.
  • the fourth electrode layer 141 in the light-emitting diode in FIG. 2 is made opaque, while the fourth electrode layer 141 in the light-emitting diode in FIG. 1 a is made translucent.
  • the above-mentioned design differences of the substrates 1 and the fourth electrode layer 141 result in the different radiation direction of the light beams 151, 161, 171.
  • the OLED layers 91, 111, 131 in the light-emitting diode shown in FIG. 2 are advantageously in the reverse order are arranged as in Fig. la.
  • the first OLED layer 91 in FIG. 2 is made of the same material as the third OLED layer 131 in FIG.
  • the first OLED layer 91 generates the blue light beam 171
  • the third OLED layer 131 generates the blue light beam 171.
  • the same relationships also apply to the red light beam 151 and the green light beam 161 and the other OLED layers.
  • the reason for the reverse arrangement of the light beams is again based on the fact that in these two exemplary embodiments it is advantageous if the light beam with the photons of higher energy passes through a smaller number of layers than the light beam with the photons of lower energy.
  • FIG. 3 shows a further exemplary embodiment of a light-emitting diode in accordance with the present invention.
  • the structure of the light-emitting diode shown in FIG. 3 differs from the structure of the light-emitting diode shown in FIG. 2 in that the fourth electrode layer 141 in FIG. 3 is translucent, while in FIG. 2 it is made opaque. This results in a radiation characteristic which differs from the light-emitting diode shown in FIG. 2 for the light-emitting diode shown in FIG. 3.
  • the light beams 151, 161, 171 are now emitted in both directions, that is to say both through the substrate 1 and through the fourth electrode layer 141.
  • the light-emitting diode in FIG. 3 also emits all three colors in the opposite direction through the fourth electrode layer 141.
  • FIG. 4 shows a further exemplary embodiment of a light-emitting diode in accordance with the present invention.
  • the light-emitting diode shown here differs from the exemplary embodiment shown in FIG. 1a in that the fourth insulation layer 81 from FIG. layer edge 204 is replaced, and the third contact layer 41 from FIG. la is omitted, and in that the fourth electrode layer 141 from FIG. la in FIG. 4 is replaced by the electrode track 208.
  • FIG. 4 An arrangement shown in FIG. 4 is a light emitting diode which is part of a passive matrix display in which a color light emitting diode represents a pixel and the pixels are arranged in rows and columns.
  • the translucent electrode track 208 is connected to a plurality of light-emitting diodes which are arranged in a row or extends in a strip shape over a row of pixels or recesses.
  • the electrode track 208 is connected to a plurality of light-emitting diodes and thus a plurality of third OLED layers 131.
  • the plurality of light emitting diodes, which are arranged in a row are connected to one another via the electrode track 208.
  • a decision as to whether or not the third OLED layer 131 is supplied with charge carriers is made solely by the voltage at the contact layer 31, which together with the electrode track 208 is responsible for the charge carrier supply of the third electrode layer 121.
  • the contact layers 31 are in the series arranged light-emitting diodes, which are connected via the electrode track 208, are electrically separated from one another. Every third OLED layer 131 can thus be controlled separately by each light-emitting diode.
  • the fourth electrode layer 141 from FIG. 1 a is implemented jointly over a plurality of light-emitting diodes arranged in the row. This arrangement is referred to as a passive matrix display.
  • Another difference between the exemplary embodiment of the light-emitting diode according to the present invention shown in FIG. 1a and the light-emitting diode according to the present invention shown in FIG. 4 is that the fourth insulation layer 81 is replaced by the insulation layer edge 204.
  • the geometric design of the insulation edge 204 prevents the material which is deposited on the insulation layer edge 204 during the vapor deposition of the electrode web 208 from forming a common layer with the electrode web 208, which may even result in an electrically conductive connection to the electrode web 208 in the adjacent one Series could result.
  • FIG. 5 shows a further exemplary embodiment of a light-emitting diode in accordance with the present invention.
  • the light-emitting diode shown here differs from the exemplary embodiment in FIG. 1 a in that a first insulating layer 211 is applied to the first contact layer 21 and a second insulating layer 216 is applied to the second contact layer 31.
  • the insulating layers 211, 216 extend beyond the contact layers 21, 31, both on the side facing away from the recess into the insulation layers 61, 71 and on the side facing the recess into the electrode layers 101, 121.
  • the insulating layers 211, 216 prevent the material of the electrode layer 121 from forming a conductive connection between the contact layer 21 and the third electrode layer 121 during the manufacturing process, and thus a short circuit of the second OLED layer 111. This would destroy the LED.
  • the light-emitting diodes according to the exemplary embodiment of the present invention in FIG. 5 are thus more resistant to unwanted contacts in the manufacturing process, which leads to an increase in the yield.
  • FIG. 6 shows an array consisting of light-emitting diodes or light-emitting diode stacks according to an exemplary embodiment of the present invention.
  • the multilayer structure 221 comprises the insulation layers, the contact layers and the contact holes, although the contact layers also extend into the recesses 191.
  • the insulation layers, contact layers and the contact holes are not shown in this FIG. 6.
  • the recesses 191 comprise the electrode layers, the OLED layers and parts of the contact layers which extend into the recess 191.
  • the electrode layers, the OLED layers and the contact layers extending into the recesses 191 are also not shown in this FIG. 6.
  • the shadow masks and the evaporation of the OLED and electrode layer material can be carried out over the entire area, since when the electrode layers and the OLED layers are evaporated, the material can be deposited both on the multilayer structure 221 and in the recesses 191 without that this leads to crosstalk between the light emitting diodes, since the multi-layer structure not only serves to control but also to form tear-off edges.
  • FIG. 7 explains a manufacturing method of the light-emitting diode shown in FIG. 1 a according to an exemplary embodiment of the present invention.
  • the substrate 1 is provided.
  • the first metal level 3a is then applied and structured on the substrate 1 in a step 230, so that the first electrode layer 16 and the conductor tracks 18, 20 are formed.
  • a step 240 the multilayer arrangement is then completed by successive application, so that the contact holes 6, 11, 181, the contact layers 21, 31, 41 and the insulation layers 51, 61, 71, 81 are formed.
  • the layers 21 - 81 applied one after the other are either structured in the same way, ie always before the overlying layer is made, so that the arrangement 5 is formed, or the arrangement 5 is produced as a final step after formation of all layers.
  • Steps 230, 240 are preferably carried out by means of lithographic methods, with a wafer being used as the substrate, as a result of which the production method is inexpensive and the use of a shadow mask becomes unnecessary, which in turn enables the production of larger dispalys.
  • the OLED layer 91 is then applied to the first electrode layer 16 in a step 250.
  • the second electrode layer 101 is then applied in a step 260 by means of deposition over the entire surface.
  • steps 250 and 260 parts protruding into the recess, together with the multilayer arrangement, serve as separators, which enable tear edges or prevent layers 16, 101 from being formed continuously with those of neighboring pixels.
  • the process jumps back to step 250 in order to apply the second OLED layer 111 and in the subsequent step 260 the third electrode layer 121.
  • the steps 250, 260 are then carried out a third time, the third OLED layer 131 and the fourth electrode layer 141 being applied.
  • the recesses 191 in which the OLED layers 91, 111, 131 and the electrode layers 16, 101, 121, 141 are introduced are rectangular.
  • any geometric designs for a floor plan of the recesses 191 such as B. circles or ellipses.
  • the above exemplary embodiments each comprise three OLED layers 91, 111, 131, four electrode layers 16, 101, 121, 141, three contact holes 6, 11, 181 and three or four insulation layers.
  • any number of OLED layers, electrode layers, contact holes and insulation layers can alternatively be implemented.
  • the OLED layers 91, 111, 131 and the electrode layers 16, 101, 121, 141 each fill the base area of the complete recess 191.
  • Alternatives are also electrode layers or OLED layers which only fill part of the recess 191, the OLED layers or electrode layers then also being able to be electrically insulated from one another by an insulation layer.
  • FIGS. 1 a to 7 light-emitting diodes with three primary colors red, green and blue are listed. Alternatives are also light-emitting diodes with any color distribution.
  • the contact layers 21, 31, 41 are geometrically identical, in the exemplary embodiments FIGS. 1 a to 7 and all extend into the electrode layers 101, 121, 141.
  • the contact layers can also be of any desired design, have no symmetries and are non-symmetrical also do not extend into the electrode layers, but only adjoin them.
  • the light beams shown are perpendicular to the base surface of the substrate 1.
  • the radiation characteristic is such that the radiation takes place in a wide angular range of approximately 180 °.
  • Alternatives are also oblique arrangements of the light-generating layers in the recess 5, the light-generating layers and a surface normal to the substrate 1 having an angle that deviates from 90 °.
  • the contact layers 21, 31, 41 are designed such that they completely surround the electrode layers.
  • Alternatives are also arrangements in which the contact layers are not self-contained and are only arranged around part of the recess 191.
  • all contact layers 21, 31, 41 are connected to the substrate 1.
  • Alternatives are also connections in the multilayer structure 221 or on the multilayer structure 221, so that one or a plurality of contact layers are also insulated from the substrate 1.
  • the fourth electrode layer 141 from FIG. 1 a is designed as an electrode track 208, while the lower electrode is connected in series with those of pixels in the same column or row. This creates a passive matrix display.
  • another combination such as the second electrode layer 101 or the third electrode layer 121, can also be designed as an electrode track if the fourth electrode layer is not designed as an electrode track, and it applies that only two electrode layers of the OLED Stacks are designed as an electrode track.
  • step 230 of the production method shown in FIG. 7, in which a metal level is introduced into a recess in the substrate 1.
  • sequence of steps can be varied in FIG. 7.
  • the electrodes of a stacked OLED are contacted by vertically arranged contact electrodes, each color being contacted by the vertical application, in each case only by one contact electrode.
  • pixelation of a stacked OLED can be achieved in almost any resolution, so that color displays can be produced both for mini displays larger than 1 "diagonal" and for microdisplays.
  • shadow mask structuring is no longer required, which therefore enables the above exemplary embodiments to be implemented with substrates of any size.
  • the manufacturing method according to the exemplary embodiment of the present invention can therefore also be used in normal displays and large displays.
  • the aspect ratio which is the ratio between active sub-pixel area and total pixel area are defined, greatly increased, which on the one hand leads to an extension of the service life of the OLEDs with the same view with a display brightness and furthermore enables an optimal color mixing in pixels.
  • the pixels are dielectrically and optically isolated from one another, which reduces crosstalk of the pixels.
  • the electrodes 16, 101, 121, 141 which have so far been implemented consistently with inorganic layer systems, can optionally be replaced by organic conductive layers (doped layer systems), since the lateral connection resistance is greatly reduced by the arrangement.
  • Another interesting application of the light-emitting diode described in the above exemplary embodiments is the use for lighting purposes in which white or specific color tones can be set. Compared to laterally structured OLEDs, better utilization of the area can be achieved here.
  • the above exemplary embodiments are an improved structuring option in a color display, an increase in the aspect ratio of the subpixels, an improvement in the color mixing in the display, an improvement in the service life of the display by in-situ structuring or completely in vacuum structuring, an increased material utilization in the manufacture of the display , a reduction in crosstalk between the pixels and a possibility of using organic electrode systems.
  • FIG. 1 a a side view is shown in FIG. 1 a and a top view in FIG. 1 b.
  • the starting electrode 16 is structured on the substrate 1.
  • the first counter electrode 21 is applied in a structured manner, followed by a further insulation layer 61 with the next counter electrode 31 for the following color.
  • the next insulation layer 71 with the following Electrode 41 is used to contact the last color.
  • the structuring stack is completed by the insulation layer 81.
  • the electrodes 21, 31, 41 are arranged overhanging within the pixel area of the recess 191 and form local tear-off edges in the subsequent organic stack deposition.
  • the color electrodes are contacted on the side of the pixel area.
  • the OLED structures are arranged such that the OLED with the emission with the smallest photon energy (red) as the lowest and the OLED with the highest photon energy (blue) as the top is applied. This minimizes the absorption in the layers above.
  • the organic light-emitting diodes are deposited over a large area.
  • the organic matter of the first OLED (eg red) 91 is deposited, followed by the contacting of the lateral electrodes through the first contacting layer 101. This is followed directly by the organic matter of the second OLED (eg green) 111 with the subsequent contacting 121.
  • the last organics 131 and the last electrode 141 complete the production.
  • the side electrodes 21, 31, 41 are connected to the underlying circuit through contact holes.
  • the stacked OLED is emitted away from a substrate.
  • FIG. 2 Another arrangement according to the invention is shown in FIG. 2, where the stacked OLED is emitted by the substrate 1.
  • the electrode 141 is designed to be opaque.
  • the OLED structures are arranged in such a way that the OLED with the emission at the smallest photon energy (red) as the top one and the OLED with the highest photon energy (blue) is applied as the lowest. This minimizes the absorption in the respective layer.
  • the electrode 141 is also designed to be translucent, and thus an emission takes place in both directions.
  • the stacked diode is then transparent.
  • FIG. 4 An arrangement explained in FIG. 4 according to an exemplary embodiment of the present invention shows the case where the application is used in passive matrix displays.
  • the structuring of the electrodes 21, 31 takes place in the form of rows and columns, and the last side electrode 41 can be omitted in this exemplary embodiment and by a lateral structuring of the OLED electrode 141 and by an overhanging edge of the insulation layer 81, which here as insulating layer 204 is achieved.
  • FIG. 5 A further modified arrangement in accordance with the exemplary embodiments of the present invention is explained in FIG. 5.
  • additional overhanging insulating edges 211, 216 are inserted. This embodiment increases the process reliability of the arrangement and thus increases the yield.
  • a modification in the sense of the above exemplary embodiments of the present invention is the replacement of at least one of the OLED electrodes 101, 121, 141 by a conductive organic layer, since the arrangement of the electrodes means that the lateral contact resistance is so low that it can also be realized by organic layers can. This arrangement results in particular in simplifying the manufacture.
  • the above exemplary embodiments show the manufacture and integration of a stacked organic light-emitting diode by structuring and contacting the stacked diodes by laterally stacked overhanging edges.
  • the light is coupled out via a transparent cover electrode.
  • the light can also be coupled out via a transparent substrate electrode.
  • the light can be coupled out both via the transparent substrate electrode and via the transparent cover electrode.
  • Advantageous arrangements in the above exemplary embodiments show that the emission energy of the stacked light-emitting diodes away from the substrate becomes larger or smaller, depending on whether it is a top-emitting or a substrate-emitting light-emitting diode. It is also possible in the above exemplary embodiments to arrange the OLED with the lowest emission energy in the middle of the stacked light-emitting diode and the OLEDs with the higher emission energy on the outside.
  • the lateral electrodes 21, 31, 41 have direct contact with the substrate electronics.
  • the lateral electrodes 21, 31, 41 can be designed in the form of rows and columns.
  • an additional insulating layer 204 can be arranged above the lateral electrodes in FIGS.
  • contacting of the lateral electrodes 21, 31, 41 can also be achieved by a conductive organic layer. The above exemplary embodiments have shown that the integration of stacked, vapor-deposited organic light-emitting diodes can take place by vertically arranged contacting of the electrodes.
  • OLEDs organic light emitting diodes
  • a layer system comprising up to three differently colored OLEDs is integrated and contacted in a display in such a way that it can also be used in mini and microdisplays.
  • organic light-emitting diodes based on polymers have been realized so far, which are usually applied from solutions.
  • organic light-emitting diodes made of polymers also have disadvantages, such as the shorter lifespan in comparison to vapor-deposited organic light-emitting diodes. These printing techniques are not available for light-emitting diodes based on vapor-deposited materials. Furthermore, it is important for the quality of the OLEDs to carry out all structuring in a vacuum.
  • the subject of this invention is a possibility of integrating such stacked OLEDs in a display and to achieve the pixel contact.
  • the process is also suitable for very high-resolution displays and any substrate sizes.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

L'invention concerne une diode électroluminescente comprenant un substrat (1), un ensemble de plusieurs couches qui est situé sur le substrat (1) et dans lequel est ménagé un évidement, ainsi qu'une couche photoémettrice organique (91, 111, 131), située dans l'évidement. L'ensemble de plusieurs couches présente une couche de contact (21, 31, 41) qui s'étend jusqu'à l'évidement ou jusqu'à l'intérieur de ce dernier et qui est raccordée de manière électroconductrice à la diode organique électroluminescente (91, 111, 131).
PCT/EP2004/005432 2004-05-19 2004-05-19 Diode electroluminescente et son procede de production WO2005117158A1 (fr)

Priority Applications (2)

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DE112004002833T DE112004002833A5 (de) 2004-05-19 2004-05-19 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
PCT/EP2004/005432 WO2005117158A1 (fr) 2004-05-19 2004-05-19 Diode electroluminescente et son procede de production

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
CN101908531A (zh) * 2009-06-05 2010-12-08 清华大学 一种多层电致发光装置
DE102010014611A1 (de) * 2010-04-10 2011-10-13 Ledon Oled Lighting Gmbh & Co.Kg Leuchtmodul und Leuchte
WO2021078643A1 (fr) * 2019-10-24 2021-04-29 Apeva Se Procédé de fabrication de diodes électroluminescentes organiques empilées les unes au-dessus des autres

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JPH0451494A (ja) * 1990-06-18 1992-02-19 Pioneer Electron Corp 有機電界発光素子及びその製造方法
DE19603451A1 (de) * 1995-01-31 1996-08-01 Futaba Denshi Kogyo Kk Organische elektrolumineszente Anzeigevorrichutng und Verfahren zur Herstellung derselbigen
EP0736913A2 (fr) * 1995-04-05 1996-10-09 Motorola, Inc. Boîtier intégré électro-optique
US6232714B1 (en) * 1997-05-20 2001-05-15 The Trustees Of Princeton University Saturated full color stacked organic light emitting devices
US6278237B1 (en) * 1997-09-22 2001-08-21 Emagin Corporation Laterally structured high resolution multicolor organic electroluminescence display device
US20020153243A1 (en) * 1994-12-13 2002-10-24 Stephen R Forrest Method of fabricating transparent contacts for organic devices

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Publication number Priority date Publication date Assignee Title
JPH0451494A (ja) * 1990-06-18 1992-02-19 Pioneer Electron Corp 有機電界発光素子及びその製造方法
US20020153243A1 (en) * 1994-12-13 2002-10-24 Stephen R Forrest Method of fabricating transparent contacts for organic devices
DE19603451A1 (de) * 1995-01-31 1996-08-01 Futaba Denshi Kogyo Kk Organische elektrolumineszente Anzeigevorrichutng und Verfahren zur Herstellung derselbigen
EP0736913A2 (fr) * 1995-04-05 1996-10-09 Motorola, Inc. Boîtier intégré électro-optique
US6232714B1 (en) * 1997-05-20 2001-05-15 The Trustees Of Princeton University Saturated full color stacked organic light emitting devices
US6278237B1 (en) * 1997-09-22 2001-08-21 Emagin Corporation Laterally structured high resolution multicolor organic electroluminescence display device

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101908531A (zh) * 2009-06-05 2010-12-08 清华大学 一种多层电致发光装置
DE102010014611A1 (de) * 2010-04-10 2011-10-13 Ledon Oled Lighting Gmbh & Co.Kg Leuchtmodul und Leuchte
WO2021078643A1 (fr) * 2019-10-24 2021-04-29 Apeva Se Procédé de fabrication de diodes électroluminescentes organiques empilées les unes au-dessus des autres

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