WO2005112087A1 - Implanted counted dopant ions - Google Patents
Implanted counted dopant ions Download PDFInfo
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- WO2005112087A1 WO2005112087A1 PCT/AU2005/000706 AU2005000706W WO2005112087A1 WO 2005112087 A1 WO2005112087 A1 WO 2005112087A1 AU 2005000706 W AU2005000706 W AU 2005000706W WO 2005112087 A1 WO2005112087 A1 WO 2005112087A1
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- Prior art keywords
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- ion
- ions
- dopant
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- 150000002500 ions Chemical class 0.000 title claims abstract description 170
- 239000002019 doping agent Substances 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims description 66
- 238000010884 ion-beam technique Methods 0.000 claims description 33
- 239000007943 implant Substances 0.000 claims description 26
- 238000002513 implantation Methods 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 238000000609 electron-beam lithography Methods 0.000 claims description 15
- 238000005468 ion implantation Methods 0.000 claims description 15
- 239000002096 quantum dot Substances 0.000 claims description 15
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 12
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 238000000137 annealing Methods 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 8
- 239000004411 aluminium Substances 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 6
- 230000004913 activation Effects 0.000 claims description 4
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- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
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- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims 4
- 229910015900 BF3 Inorganic materials 0.000 claims 2
- 239000010410 layer Substances 0.000 description 35
- 230000008569 process Effects 0.000 description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 238000001514 detection method Methods 0.000 description 15
- 125000004429 atom Chemical group 0.000 description 14
- 229910052698 phosphorus Inorganic materials 0.000 description 12
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- -1 boron ions Chemical class 0.000 description 6
- 230000000981 bystander Effects 0.000 description 6
- 125000001153 fluoro group Chemical group F* 0.000 description 6
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- INQLNSVYIFCUML-QZTLEVGFSA-N [[(2r,3s,4r,5r)-5-(6-aminopurin-9-yl)-3,4-dihydroxyoxolan-2-yl]methoxy-hydroxyphosphoryl] [(2r,3s,4r,5r)-5-(4-carbamoyl-1,3-thiazol-2-yl)-3,4-dihydroxyoxolan-2-yl]methyl hydrogen phosphate Chemical compound NC(=O)C1=CSC([C@H]2[C@@H]([C@H](O)[C@@H](COP(O)(=O)OP(O)(=O)OC[C@@H]3[C@H]([C@@H](O)[C@@H](O3)N3C4=NC=NC(N)=C4N=C3)O)O2)O)=N1 INQLNSVYIFCUML-QZTLEVGFSA-N 0.000 description 3
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- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000004347 surface barrier Methods 0.000 description 2
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26566—Bombardment with radiation with high-energy radiation producing ion implantation of a cluster, e.g. using a gas cluster ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66537—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a self aligned punch through stopper or threshold implant under the gate region
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/66583—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with initial gate mask or masking layer complementary to the prospective gate location, e.g. with dummy source and drain contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007516877A JP5189359B2 (en) | 2004-05-18 | 2005-05-18 | Implanted and counted dopant ions |
EP05739900.8A EP1747579B1 (en) | 2004-05-18 | 2005-05-18 | Method of implanting counted dopant ions |
CN2005800153646A CN1954409B (en) | 2004-05-18 | 2005-05-18 | Implanted counted dopant ions |
AU2005242730A AU2005242730B2 (en) | 2004-05-18 | 2005-05-18 | Implanted counted dopant ions |
US11/596,720 US7834422B2 (en) | 2004-05-18 | 2005-05-18 | Implanted counted dopant ions |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2004902661 | 2004-05-18 | ||
AU2004902661A AU2004902661A0 (en) | 2004-05-18 | Implanted counted ions |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2005112087A1 true WO2005112087A1 (en) | 2005-11-24 |
Family
ID=35394420
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/AU2005/000706 WO2005112087A1 (en) | 2004-05-18 | 2005-05-18 | Implanted counted dopant ions |
Country Status (5)
Country | Link |
---|---|
US (1) | US7834422B2 (en) |
EP (1) | EP1747579B1 (en) |
JP (1) | JP5189359B2 (en) |
CN (1) | CN1954409B (en) |
WO (1) | WO2005112087A1 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008015211B4 (en) * | 2008-03-20 | 2011-01-05 | Infineon Technologies Ag | Measuring arrangement and method for operating the measuring arrangement |
KR101525590B1 (en) * | 2008-10-08 | 2015-06-04 | 삼성디스플레이 주식회사 | Display substrate and manufacturing method thereof |
US8409908B2 (en) * | 2009-07-30 | 2013-04-02 | General Electric Company | Apparatus for reducing photodiode thermal gain coefficient and method of making same |
US9263272B2 (en) | 2012-04-24 | 2016-02-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate electrodes with notches and methods for forming the same |
US9355888B2 (en) | 2012-10-01 | 2016-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Implant isolated devices and method for forming the same |
US9673245B2 (en) | 2012-10-01 | 2017-06-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Implant isolated devices and method for forming the same |
US9159033B2 (en) | 2013-03-14 | 2015-10-13 | Internatinal Business Machines Corporation | Frequency separation between qubit and chip mode to reduce purcell loss |
US8865537B2 (en) | 2013-03-14 | 2014-10-21 | International Business Machines Corporation | Differential excitation of ports to control chip-mode mediated crosstalk |
US8972921B2 (en) | 2013-03-14 | 2015-03-03 | International Business Machines Corporation | Symmetric placement of components on a chip to reduce crosstalk induced by chip modes |
CN104867834A (en) * | 2015-04-22 | 2015-08-26 | 中国科学院半导体研究所 | Single-impurity atom junction-free silicon nano wire transistor based on SOI substrate, and preparation method thereof |
CN114765224A (en) * | 2020-12-30 | 2022-07-19 | 苏州阿特斯阳光电力科技有限公司 | Back contact battery and preparation method thereof |
CN112820613B (en) * | 2021-01-04 | 2021-12-03 | 长江存储科技有限责任公司 | Ion implantation apparatus and ion implantation method |
DE102021117027A1 (en) | 2021-07-01 | 2023-01-05 | Universität Leipzig | Apparatus and method for determining penetration of a particle into a material |
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JP2001023917A (en) * | 1999-07-06 | 2001-01-26 | Univ Waseda | Semiconductor device having suppressed fluctuation |
WO2003019635A1 (en) * | 2001-08-27 | 2003-03-06 | Unisearch Limited | Method and system for single ion implantation |
Family Cites Families (11)
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US3996655A (en) * | 1973-12-14 | 1976-12-14 | Texas Instruments Incorporated | Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product |
US4744616A (en) * | 1985-02-25 | 1988-05-17 | California Institute Of Technology | Monolithic electro-optic modulator array |
JPH05326437A (en) * | 1992-05-22 | 1993-12-10 | Nec Yamagata Ltd | Counting method of implanted amount in ion-implantation apparatus |
JP4044176B2 (en) * | 1996-07-11 | 2008-02-06 | 株式会社半導体エネルギー研究所 | Semiconductor device |
JP3414337B2 (en) * | 1999-11-12 | 2003-06-09 | 日新電機株式会社 | Electromagnetic field lens control method and ion implantation apparatus |
EP1264335A1 (en) * | 2000-03-17 | 2002-12-11 | Varian Semiconductor Equipment Associates Inc. | Method of forming ultrashallow junctions by laser annealing and rapid thermal annealing |
JP2002368252A (en) * | 2001-06-06 | 2002-12-20 | Sanyo Electric Co Ltd | Pin diode |
US20030042498A1 (en) * | 2001-08-30 | 2003-03-06 | Ming-Dou Ker | Method of forming a substrate-triggered SCR device in CMOS technology |
JP3692999B2 (en) * | 2001-10-26 | 2005-09-07 | 日新イオン機器株式会社 | Ion implantation method and apparatus |
CN1192419C (en) * | 2001-12-03 | 2005-03-09 | 旺宏电子股份有限公司 | Method for reducing device size using reducing drain electrode inplanting range |
JP2003173757A (en) * | 2001-12-04 | 2003-06-20 | Nissin Electric Co Ltd | Ion beam irradiation device |
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2005
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- 2005-05-18 EP EP05739900.8A patent/EP1747579B1/en active Active
- 2005-05-18 JP JP2007516877A patent/JP5189359B2/en active Active
- 2005-05-18 CN CN2005800153646A patent/CN1954409B/en active Active
- 2005-05-18 WO PCT/AU2005/000706 patent/WO2005112087A1/en active Application Filing
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JP2001023917A (en) * | 1999-07-06 | 2001-01-26 | Univ Waseda | Semiconductor device having suppressed fluctuation |
WO2003019635A1 (en) * | 2001-08-27 | 2003-03-06 | Unisearch Limited | Method and system for single ion implantation |
Non-Patent Citations (8)
Title |
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A A CLERK; S M GIRVIN; A K NGUYEN; A D STONE: "Resonant Cooper-Pair Tunneling: Qunatum Noise and Measurement Characteristics", PHYS. REV. LETT., vol. 89, 2002, pages 176804 |
GUJRATHI S C ET AL.: "The detection of heavy ions with PIN diodes", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, SECTION B (BEAM INTERACTIONS WITH MATERIALS AND ATOMS) NETHERLANDS, vol. B45, no. 1-4, January 1990 (1990-01-01), pages 260 - 264 |
M H DEVORET; R J SCHOELKOPF: "Amplifying quantum signals with the single- electron transistor", NATURE, vol. 406, 2000, pages 1039 |
N S SAKS: "Measurement of single interface trap cross sections with charge pumping", APPL. PHYS. LETT., vol. 70, 1997, pages 3380 |
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 16 * |
SCHENKEL T: "Solid state quantum computer development in silicon with single ion implantation", JOURNAL OF APPLIED PHYSICS AIP USA, vol. 94, 1 December 2003 (2003-12-01), pages 7017 - 7024 |
See also references of EP1747579A4 |
T M BUEHLER; D J REILLY; R P STARRETT; A D GREENTREE; A R HAMILTON; A S DZURAK; R G CLARK: "Efficient readout with the radio frequency single electron transistor in the presence of charge noise ar Xiv:cond-mat/0304384", EFFICIENT READOUT WITH THE RADIO FREQUENCY SINGLE ELECTRON TRANSISTOR IN THE PRESENCE OF CHARGE NOISE, 2003 |
Also Published As
Publication number | Publication date |
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US20070252240A1 (en) | 2007-11-01 |
CN1954409A (en) | 2007-04-25 |
JP5189359B2 (en) | 2013-04-24 |
EP1747579B1 (en) | 2017-07-26 |
CN1954409B (en) | 2010-10-13 |
EP1747579A1 (en) | 2007-01-31 |
EP1747579A4 (en) | 2009-09-02 |
JP2008502161A (en) | 2008-01-24 |
US7834422B2 (en) | 2010-11-16 |
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