WO2005083516A3 - Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l’extreme uv et des rayons x mous - Google Patents

Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l’extreme uv et des rayons x mous Download PDF

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Publication number
WO2005083516A3
WO2005083516A3 PCT/FR2005/000168 FR2005000168W WO2005083516A3 WO 2005083516 A3 WO2005083516 A3 WO 2005083516A3 FR 2005000168 W FR2005000168 W FR 2005000168W WO 2005083516 A3 WO2005083516 A3 WO 2005083516A3
Authority
WO
WIPO (PCT)
Prior art keywords
extreme
soft
pattern mask
ray range
patterns
Prior art date
Application number
PCT/FR2005/000168
Other languages
English (en)
Other versions
WO2005083516A2 (fr
Inventor
Jean-Louis Stehle
Original Assignee
Production Et De Rech S Appliq
Jean-Louis Stehle
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Production Et De Rech S Appliq, Jean-Louis Stehle filed Critical Production Et De Rech S Appliq
Priority to US10/587,194 priority Critical patent/US7763394B2/en
Priority to EP05717492A priority patent/EP1709484A2/fr
Publication of WO2005083516A2 publication Critical patent/WO2005083516A2/fr
Publication of WO2005083516A3 publication Critical patent/WO2005083516A3/fr

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof

Abstract

Un masque (MM) à motifs (MF) est destiné à être utilisé dans un dispositif de lithographie par réflexion d’un faisceau de photons de longueur d’onde inférieure à environ 120 nm. Ce masque (MM) comprend un substrat planaire (ST) solidarisé à une structure réfléchissante (SMR) comportant une face avant munie de motifs choisis (MF), réalisés dans un matériau absorbant à la longueur d’onde. Il comprend également des moyens de protection (SP) transparents à la longueur d’onde et agencés de manière à maintenir les particules perturbatrices (PP) à une distance (H) des motifs (MF) supérieure ou égale à l’une des valeurs prises par la profondeur de mise au point du dispositif lithographique et la hauteur qui est associée au pourcentage toléré d’absorption de photons par les particules perturbatrices (PP).
PCT/FR2005/000168 2004-01-30 2005-01-26 Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l’extreme uv et des rayons x mous WO2005083516A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/587,194 US7763394B2 (en) 2004-01-30 2005-01-26 Protected pattern mask for reflection lithography in the extreme UV or soft X-ray range
EP05717492A EP1709484A2 (fr) 2004-01-30 2005-01-26 MASQUE A MOTIFS PROTEGES, POUR LA LITHOGRAPHIE PAR REFLEXION DANS LE DOMAINE DE L’EXTREME UV ET DES RAYONS X MOUS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0400907 2004-01-30
FR0400907A FR2865813B1 (fr) 2004-01-30 2004-01-30 Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l'extreme uv et des rayons x mous

Publications (2)

Publication Number Publication Date
WO2005083516A2 WO2005083516A2 (fr) 2005-09-09
WO2005083516A3 true WO2005083516A3 (fr) 2006-05-04

Family

ID=34746336

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2005/000168 WO2005083516A2 (fr) 2004-01-30 2005-01-26 Masque a motifs proteges, pour la lithographie par reflexion dans le domaine de l’extreme uv et des rayons x mous

Country Status (4)

Country Link
US (1) US7763394B2 (fr)
EP (1) EP1709484A2 (fr)
FR (1) FR2865813B1 (fr)
WO (1) WO2005083516A2 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2894346B1 (fr) * 2005-12-02 2012-03-30 Commissariat Energie Atomique Masque de photolithographie en extreme ultra-violet, a cavites absorbantes
JP4946296B2 (ja) 2006-03-30 2012-06-06 凸版印刷株式会社 反射型フォトマスクブランク及びその製造方法、反射型フォトマスク、並びに、半導体装置の製造方法
JP6084681B2 (ja) 2013-03-15 2017-02-22 旭化成株式会社 ペリクル膜及びペリクル
KR102171020B1 (ko) 2013-10-16 2020-10-29 삼성전자주식회사 엑스레이 흡수 필터를 갖는 엑스레이 시스템, 반도체 패키지, 및 트레이
EP3674797B1 (fr) 2018-12-28 2021-05-05 IMEC vzw Scanner d'euvl

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474865A (en) * 1994-11-21 1995-12-12 Sematech, Inc. Globally planarized binary optical mask using buried absorbers
US6280886B1 (en) * 1998-12-29 2001-08-28 Intel Corporation Clean-enclosure window to protect photolithographic mask
US20020018941A1 (en) * 1998-06-19 2002-02-14 Takahiro Matsumoto X-ray mask structure, and x-ray exposure method and apparatus using the same
US6492067B1 (en) * 1999-12-03 2002-12-10 Euv Llc Removable pellicle for lithographic mask protection and handling
US6623893B1 (en) * 2001-01-26 2003-09-23 Advanced Micro Devices, Inc. Pellicle for use in EUV lithography and a method of making such a pellicle
WO2003096121A2 (fr) * 2002-05-07 2003-11-20 Commissariat A L'energie Atomique Masque pour photolithographie a elements absorbeurs/dephaseurs inclus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5935733A (en) * 1996-04-05 1999-08-10 Intel Corporation Photolithography mask and method of fabrication
US5928817A (en) * 1997-12-22 1999-07-27 Intel Corporation Method of protecting an EUV mask from damage and contamination
US6316167B1 (en) * 2000-01-10 2001-11-13 International Business Machines Corporation Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof
US6803159B2 (en) * 2002-03-28 2004-10-12 Intel Corporation Method of keeping contaminants away from a mask with electrostatic forces
EP1385051A1 (fr) * 2002-06-14 2004-01-28 ASML Netherlands B.V. Appareil d'exposition pour la lithographie par UV extrême ayant un élément optique avec monocouche autoassemblée, élément optique avec un telle couche, procédé pour appliquer cette couche et méthode pour fabriquer un appareil
US20040130693A1 (en) * 2002-10-31 2004-07-08 Asml Netherlands B.V. Lithographic apparatus, optical element and device manufacturing method
US20040200572A1 (en) * 2003-04-08 2004-10-14 Edita Tejnil Assembling pellicle frames and photomasks

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474865A (en) * 1994-11-21 1995-12-12 Sematech, Inc. Globally planarized binary optical mask using buried absorbers
US20020018941A1 (en) * 1998-06-19 2002-02-14 Takahiro Matsumoto X-ray mask structure, and x-ray exposure method and apparatus using the same
US6280886B1 (en) * 1998-12-29 2001-08-28 Intel Corporation Clean-enclosure window to protect photolithographic mask
US6492067B1 (en) * 1999-12-03 2002-12-10 Euv Llc Removable pellicle for lithographic mask protection and handling
US6623893B1 (en) * 2001-01-26 2003-09-23 Advanced Micro Devices, Inc. Pellicle for use in EUV lithography and a method of making such a pellicle
WO2003096121A2 (fr) * 2002-05-07 2003-11-20 Commissariat A L'energie Atomique Masque pour photolithographie a elements absorbeurs/dephaseurs inclus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MALDONADO J R ET AL: "PELLICLES FOR X-RAY LITHOGRAPHY MASKS", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 3331, 23 February 1998 (1998-02-23), pages 245 - 254, XP000983002, ISSN: 0277-786X *

Also Published As

Publication number Publication date
EP1709484A2 (fr) 2006-10-11
US20070160913A1 (en) 2007-07-12
US7763394B2 (en) 2010-07-27
WO2005083516A2 (fr) 2005-09-09
FR2865813A1 (fr) 2005-08-05
FR2865813B1 (fr) 2006-06-23

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