WO2005078802A3 - Hochsperrendes halbleiterbauelement mit driftstrecke - Google Patents

Hochsperrendes halbleiterbauelement mit driftstrecke Download PDF

Info

Publication number
WO2005078802A3
WO2005078802A3 PCT/DE2005/000241 DE2005000241W WO2005078802A3 WO 2005078802 A3 WO2005078802 A3 WO 2005078802A3 DE 2005000241 W DE2005000241 W DE 2005000241W WO 2005078802 A3 WO2005078802 A3 WO 2005078802A3
Authority
WO
WIPO (PCT)
Prior art keywords
drift section
semiconductor component
blocking semiconductor
semiconductor
drift
Prior art date
Application number
PCT/DE2005/000241
Other languages
English (en)
French (fr)
Other versions
WO2005078802A2 (de
Inventor
Franz Hirler
Anton Mauder
Frank Pfirsch
Original Assignee
Infineon Technologies Ag
Franz Hirler
Anton Mauder
Frank Pfirsch
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Franz Hirler, Anton Mauder, Frank Pfirsch filed Critical Infineon Technologies Ag
Publication of WO2005078802A2 publication Critical patent/WO2005078802A2/de
Publication of WO2005078802A3 publication Critical patent/WO2005078802A3/de
Priority to US11/464,004 priority Critical patent/US7436023B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H01L29/8083—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

Die Erfindung betrifft ein Halbleiterbauelement mit einer in einem Halbleiterkörper (1) ausgebildeten Driftstrecke (2) aus einem Halbleitermaterial eines Leitungstyps. Die Driftstrecke (2) ist zwischen wenigstens einer ersten und einer zweiten Elektrode (3, 4) angeordnet und weist eine Grabenstruktur in Form mindestens eines Trenches (18) auf. In der Grabenstruktur ist ein high-k-Material genanntes dielektrisches Material angeordnet, das eine relative Dielektrizitätskonstante er mit er = 20 aufweist, so dass im Bereich der Driftstrecke (2) mindestens ein high-k-Materialgebiet (5) und ein Halbleitermaterialgebiet (6) des einen Leitungstyps angeordnet sind.
PCT/DE2005/000241 2004-02-13 2005-02-11 Hochsperrendes halbleiterbauelement mit driftstrecke WO2005078802A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/464,004 US7436023B2 (en) 2004-02-13 2006-08-11 High blocking semiconductor component comprising a drift section

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102004007197.7 2004-02-13
DE102004007197A DE102004007197B4 (de) 2004-02-13 2004-02-13 Hochsperrendes Halbleiterbauelement mit niedriger Durchlassspannung

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/464,004 Continuation US7436023B2 (en) 2004-02-13 2006-08-11 High blocking semiconductor component comprising a drift section

Publications (2)

Publication Number Publication Date
WO2005078802A2 WO2005078802A2 (de) 2005-08-25
WO2005078802A3 true WO2005078802A3 (de) 2006-02-02

Family

ID=34813341

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2005/000241 WO2005078802A2 (de) 2004-02-13 2005-02-11 Hochsperrendes halbleiterbauelement mit driftstrecke

Country Status (3)

Country Link
US (1) US7436023B2 (de)
DE (1) DE102004007197B4 (de)
WO (1) WO2005078802A2 (de)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004044619B4 (de) 2004-09-13 2009-07-16 Infineon Technologies Ag Kondensatorstruktur in Grabenstrukturen von Halbleiterbauteilen und Halbleiterbauteile mit derartigen Kondensatorstrukturen und Verfahren zur Herstellung derselben
DE102004046697B4 (de) 2004-09-24 2020-06-10 Infineon Technologies Ag Hochspannungsfestes Halbleiterbauelement mit vertikal leitenden Halbleiterkörperbereichen und einer Grabenstruktur sowie Verfahren zur Herstellung desselben
DE102005011967B4 (de) * 2005-03-14 2007-07-19 Infineon Technologies Ag Halbleiterbauelement mit Driftstrecke und Grabenstruktur sowie Verfahren zur Herstellung desselben
DE102005035699B4 (de) * 2005-07-27 2010-09-16 Infineon Technologies Austria Ag Halbleiterleistungsbauelement mit Ladungskompensationsstruktur und Verfahren zur Herstellung desselben
DE102005047056B3 (de) * 2005-09-30 2007-01-18 Infineon Technologies Ag Leistungshalbleiterbauelement mit einer Feldelektrodenstruktur und Verfahren zur Herstellung einer Feldelektrodenstruktur
US7554137B2 (en) * 2005-10-25 2009-06-30 Infineon Technologies Austria Ag Power semiconductor component with charge compensation structure and method for the fabrication thereof
DE102006004405B4 (de) * 2006-01-31 2015-05-13 Infineon Technologies Austria Ag Leistungshalbleiterbauelemente mit einer Driftstrecke und einer hochdielektrischen Kompensationszone und Verfahren zur Herstellung einer Kompensationszone
DE102007002965A1 (de) 2007-01-19 2008-07-24 Infineon Technologies Ag Verfahren zur Herstellung einer kapazitiven Struktur oder Varistorstruktur in einem Graben eines Halbleiterkörper
JP4616856B2 (ja) * 2007-03-27 2011-01-19 株式会社日立製作所 半導体装置、及び半導体装置の製造方法
US7880224B2 (en) * 2008-01-25 2011-02-01 Infineon Technologies Austria Ag Semiconductor component having discontinuous drift zone control dielectric arranged between drift zone and drift control zone and a method of making the same
US8044459B2 (en) * 2008-11-10 2011-10-25 Infineon Technologies Austria Ag Semiconductor device with trench field plate including first and second semiconductor materials
US8084811B2 (en) * 2009-10-08 2011-12-27 Monolithic Power Systems, Inc. Power devices with super junctions and associated methods manufacturing
WO2011077507A1 (ja) * 2009-12-21 2011-06-30 富士通株式会社 化合物半導体装置及びその製造方法
JP2011233701A (ja) * 2010-04-27 2011-11-17 Toshiba Corp 電力用半導体素子
US8390060B2 (en) * 2010-07-06 2013-03-05 Maxpower Semiconductor, Inc. Power semiconductor devices, structures, and related methods
CN102110716B (zh) * 2010-12-29 2014-03-05 电子科技大学 槽型半导体功率器件
FR2976725B1 (fr) * 2011-06-15 2013-06-28 St Microelectronics Sa Dispositif semiconducteur bidirectionnel declenchable utilisable sur silicium sur isolant
JP5749580B2 (ja) * 2011-06-16 2015-07-15 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
US8541862B2 (en) * 2011-11-30 2013-09-24 Freescale Semiconductor, Inc. Semiconductor device with self-biased isolation
US20150318346A1 (en) * 2011-11-30 2015-11-05 Xingbi Chen Semiconductor device with voltage-sustaining region constructed by semiconductor and insulator containing conductive regions
US8946850B2 (en) 2011-12-06 2015-02-03 Infineon Technologies Austria Ag Integrated circuit including a power transistor and an auxiliary transistor
FR2987172A1 (fr) 2012-02-17 2013-08-23 St Microelectronics Sa Dispositif semiconducteur bidirectionnel de protection contre les decharges electrostatiques, utilisable sur silicium sur isolant
US9099519B2 (en) * 2012-05-23 2015-08-04 Great Wall Semiconductor Corporation Semiconductor device and method of forming junction enhanced trench power MOSFET
US8637365B2 (en) 2012-06-06 2014-01-28 International Business Machines Corporation Spacer isolation in deep trench
CN103579370B (zh) * 2012-07-24 2017-10-20 朱江 一种具有化学配比失配绝缘材料的电荷补偿半导体结装置
US9093520B2 (en) 2013-08-28 2015-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. High-voltage super junction by trench and epitaxial doping
CN105336765B (zh) * 2015-10-20 2018-12-25 西南交通大学 一种功率半导体器件
US10084441B2 (en) 2016-12-15 2018-09-25 Infineon Technologies Dresden Gmbh Electronic switching and reverse polarity protection circuit
US11296240B1 (en) * 2018-12-10 2022-04-05 National Technology & Engineering Solutions Of Sandia, Llc Tunneling full-wave infrared rectenna

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19840032C1 (de) * 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US6201279B1 (en) * 1998-10-22 2001-03-13 Infineon Technologies Ag Semiconductor component having a small forward voltage and high blocking ability
US20030006458A1 (en) * 2001-07-03 2003-01-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US20030047768A1 (en) * 2001-09-07 2003-03-13 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
WO2003044864A1 (en) * 2001-11-21 2003-05-30 Tongji University Semiconductor Devices
WO2004102670A2 (en) * 2003-05-13 2004-11-25 Koninklijke Philips Electronics N.V. Semiconductor device with a field shaping region

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2089119A (en) 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4890150A (en) * 1985-12-05 1989-12-26 North American Philips Corporation Dielectric passivation
US4941026A (en) 1986-12-05 1990-07-10 General Electric Company Semiconductor devices exhibiting minimum on-resistance
CN1019720B (zh) 1991-03-19 1992-12-30 电子科技大学 半导体功率器件
US5912313A (en) * 1995-11-22 1999-06-15 The B. F. Goodrich Company Addition polymers of polycycloolefins containing silyl functional groups
US6465830B2 (en) * 2000-06-13 2002-10-15 Texas Instruments Incorporated RF voltage controlled capacitor on thick-film SOI
JP2002204072A (ja) * 2000-12-28 2002-07-19 Sanyo Electric Co Ltd 複合積層セラミック基板およびその製造方法
GB0104342D0 (en) * 2001-02-22 2001-04-11 Koninkl Philips Electronics Nv Semiconductor devices

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19840032C1 (de) * 1998-09-02 1999-11-18 Siemens Ag Halbleiterbauelement und Herstellungsverfahren dazu
US6201279B1 (en) * 1998-10-22 2001-03-13 Infineon Technologies Ag Semiconductor component having a small forward voltage and high blocking ability
US5998833A (en) * 1998-10-26 1999-12-07 North Carolina State University Power semiconductor devices having improved high frequency switching and breakdown characteristics
US20030006458A1 (en) * 2001-07-03 2003-01-09 Mitsubishi Denki Kabushiki Kaisha Semiconductor device
US20030047768A1 (en) * 2001-09-07 2003-03-13 Power Integrations, Inc. High-voltage vertical transistor with a multi-layered extended drain structure
WO2003044864A1 (en) * 2001-11-21 2003-05-30 Tongji University Semiconductor Devices
US20050116284A1 (en) * 2001-11-21 2005-06-02 Tongji University Semiconductor devices
WO2004102670A2 (en) * 2003-05-13 2004-11-25 Koninklijke Philips Electronics N.V. Semiconductor device with a field shaping region

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
CHANG H-R ET AL: "1200V, 50A TRENCH OXIDE PIN SCHOTTKY (TOPS) DIODE", CONFERENCE RECORD OF THE 1999 IEEE INDUSTRY APPLICATIONS CONFERENCE (34TH IAS ANNUAL MEETING, PHOENIX, AZ, USA), 3 October 1999 (1999-10-03), IEEE, NEW YORK, NY, USA, pages 353 - 358, XP001016855, ISBN: 0-7803-5590-3 *

Also Published As

Publication number Publication date
US20070052058A1 (en) 2007-03-08
WO2005078802A2 (de) 2005-08-25
DE102004007197A1 (de) 2005-09-01
DE102004007197B4 (de) 2012-11-08
US7436023B2 (en) 2008-10-14

Similar Documents

Publication Publication Date Title
WO2005078802A3 (de) Hochsperrendes halbleiterbauelement mit driftstrecke
WO2007012490A3 (de) Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
WO2003098700A3 (en) Resurf super-junction devices having trenches
TW200711005A (en) Method of forming a semiconductor device having asymmetric dielectric regions and structure thereof
AU4305701A (en) Field effect transistor structure with partially isolated source/drain junctionsand methods of making same
WO2000041459A3 (de) Halbleiterbauelement mit einer wolframoxidschicht und verfahren zu dessen herstellung
EP1256985A3 (de) Lateraler Leistungs-MISFET
TW200603384A (en) Integrated circuit devices including a dual gate stack structure and methods of forming the same
WO2007001825A3 (en) Semiconductor device with a conduction enhancement layer
WO2005036597A3 (en) Semiconductor device and making thereof
TW200616145A (en) 3D interconnect with protruding contacts
WO2005083780A3 (en) Cmos silicide metal gate integration
EP1239522A3 (de) Halbleiteranordnung mit Bipolartransistor mit isoliertem Gate mit dielektrischer Isolationsstruktur und Verfahren zur Herstellung
EP1478013A3 (de) Metaloxidhalbleiter-Anordnung mit geteiltem Gatter
ATE534145T1 (de) Halbleiterbauelement
WO2006037526A3 (de) Lateraler dmos-transistor und verfahren zu seiner herstellung
EP2544241A3 (de) Feldeffekttransistor mit isoliertem Gate, der ein Dummy-Gate aufweist
EP1830417A3 (de) Halbleitervorrichtung und Herstellungsverfahren dafür
ATE352873T1 (de) Niederohmiges vdmos-halbleiterbauelement
WO2008106284A3 (en) Microelectronic assembly with improved isolation voltage performance and a method for forming the same
WO2003003452A3 (en) Field-effect transistor and method of making the same
TW334604B (en) Semiconductor component with linear current-to-voltage characteristics
WO2000072360A3 (de) Junctionisolierter lateral-mosfet für high-/low-side-schalter
KR100364815B1 (en) High voltage device and fabricating method thereof
WO2004073015A3 (en) Multiple conductive plug structure including at least one conductive plug region and at least one between-conductive-plug region for lateral rf mos devices

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GM KE LS MW MZ NA SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LT LU MC NL PL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 11464004

Country of ref document: US

WWP Wipo information: published in national office

Ref document number: 11464004

Country of ref document: US

122 Ep: pct application non-entry in european phase