FR2976725B1 - Dispositif semiconducteur bidirectionnel declenchable utilisable sur silicium sur isolant - Google Patents

Dispositif semiconducteur bidirectionnel declenchable utilisable sur silicium sur isolant

Info

Publication number
FR2976725B1
FR2976725B1 FR1155194A FR1155194A FR2976725B1 FR 2976725 B1 FR2976725 B1 FR 2976725B1 FR 1155194 A FR1155194 A FR 1155194A FR 1155194 A FR1155194 A FR 1155194A FR 2976725 B1 FR2976725 B1 FR 2976725B1
Authority
FR
France
Prior art keywords
zone
silicon
semiconductor device
central
directional
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1155194A
Other languages
English (en)
Other versions
FR2976725A1 (fr
Inventor
Thomas Benoist
Philippe Galy
Johan Bourgeat
Frank Jezequel
Nicolas Guitard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1155194A priority Critical patent/FR2976725B1/fr
Priority to US13/523,520 priority patent/US8937334B2/en
Publication of FR2976725A1 publication Critical patent/FR2976725A1/fr
Application granted granted Critical
Publication of FR2976725B1 publication Critical patent/FR2976725B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/747—Bidirectional devices, e.g. triacs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
    • H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
FR1155194A 2011-06-15 2011-06-15 Dispositif semiconducteur bidirectionnel declenchable utilisable sur silicium sur isolant Expired - Fee Related FR2976725B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1155194A FR2976725B1 (fr) 2011-06-15 2011-06-15 Dispositif semiconducteur bidirectionnel declenchable utilisable sur silicium sur isolant
US13/523,520 US8937334B2 (en) 2011-06-15 2012-06-14 Triggerable bidirectional semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1155194A FR2976725B1 (fr) 2011-06-15 2011-06-15 Dispositif semiconducteur bidirectionnel declenchable utilisable sur silicium sur isolant

Publications (2)

Publication Number Publication Date
FR2976725A1 FR2976725A1 (fr) 2012-12-21
FR2976725B1 true FR2976725B1 (fr) 2013-06-28

Family

ID=44511078

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1155194A Expired - Fee Related FR2976725B1 (fr) 2011-06-15 2011-06-15 Dispositif semiconducteur bidirectionnel declenchable utilisable sur silicium sur isolant

Country Status (2)

Country Link
US (1) US8937334B2 (fr)
FR (1) FR2976725B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3001085A1 (fr) 2013-01-15 2014-07-18 St Microelectronics Sa Dispositif semiconducteur bidirectionnel de protection contre les decharges electrostatiques, utilisable sans circuit de declenchement
FR3016999A1 (fr) * 2014-01-30 2015-07-31 St Microelectronics Sa Dispositif electronique, en particulier pour la protection contre les decharges electrostatiques
US9287254B2 (en) 2014-01-30 2016-03-15 Stmicroelectronics S.A. Electronic device and protection circuit
FR3083367B1 (fr) * 2018-06-29 2021-07-23 St Microelectronics Sa Circuit electronique
CN114335139A (zh) * 2021-11-26 2022-04-12 中国电子科技集团公司第五十八研究所 一种基于fdsoi mosfet的esd结构及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5124280A (en) * 1991-01-31 1992-06-23 Sgs-Thomson Microelectronics, Inc. Local interconnect for integrated circuits
GB9321819D0 (en) * 1993-10-22 1993-12-15 Zetex Plc Mos/bipolar device
US20030042498A1 (en) * 2001-08-30 2003-03-06 Ming-Dou Ker Method of forming a substrate-triggered SCR device in CMOS technology
US6838707B2 (en) * 2002-05-06 2005-01-04 Industrial Technology Research Institute Bi-directional silicon controlled rectifier for electrostatic discharge protection
US6864537B1 (en) * 2003-01-03 2005-03-08 Micrel, Incorporated Thick gate oxide transistor and electrostatic discharge protection utilizing thick gate oxide transistors
DE102004007197B4 (de) * 2004-02-13 2012-11-08 Infineon Technologies Ag Hochsperrendes Halbleiterbauelement mit niedriger Durchlassspannung
DE102005026408B3 (de) * 2005-06-08 2007-02-01 Infineon Technologies Ag Verfahren zur Herstellung einer Stoppzone in einem Halbleiterkörper und Halbleiterbauelement mit einer Stoppzone
US7560777B1 (en) * 2005-11-08 2009-07-14 Advanced Micro Devices, Inc. Protection element and method of manufacture
US7298008B2 (en) * 2006-01-20 2007-11-20 International Business Machines Corporation Electrostatic discharge protection device and method of fabricating same
DE102006022105B4 (de) * 2006-05-11 2012-03-08 Infineon Technologies Ag ESD-Schutz-Element und ESD-Schutz-Einrichtung zur Verwendung in einem elektrischen Schaltkreis
US7786507B2 (en) * 2009-01-06 2010-08-31 Texas Instruments Incorporated Symmetrical bi-directional semiconductor ESD protection device
US20100270614A1 (en) * 2009-04-22 2010-10-28 Stmicroelectronics S.R.L. Process for manufacturing devices for power applications in integrated circuits

Also Published As

Publication number Publication date
US20120319204A1 (en) 2012-12-20
US8937334B2 (en) 2015-01-20
FR2976725A1 (fr) 2012-12-21

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20150227