FR3083367B1 - Circuit electronique - Google Patents

Circuit electronique Download PDF

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Publication number
FR3083367B1
FR3083367B1 FR1870781A FR1870781A FR3083367B1 FR 3083367 B1 FR3083367 B1 FR 3083367B1 FR 1870781 A FR1870781 A FR 1870781A FR 1870781 A FR1870781 A FR 1870781A FR 3083367 B1 FR3083367 B1 FR 3083367B1
Authority
FR
France
Prior art keywords
electric circuit
abstract
electrical circuit
present description
silicide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1870781A
Other languages
English (en)
Other versions
FR3083367A1 (fr
Inventor
Thomas Bedecarrats
Conti Louise De
Philippe Galy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics France SAS
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR1870781A priority Critical patent/FR3083367B1/fr
Priority to US16/454,230 priority patent/US11296072B2/en
Priority to CN201920994542.3U priority patent/CN210123732U/zh
Priority to CN201910575517.6A priority patent/CN110660790B/zh
Publication of FR3083367A1 publication Critical patent/FR3083367A1/fr
Application granted granted Critical
Publication of FR3083367B1 publication Critical patent/FR3083367B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements
    • H10D89/713—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base region coupled to the collector region of the other transistor, e.g. silicon controlled rectifier [SCR] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/921—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the configuration of the interconnections connecting the protective arrangements, e.g. ESD buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/931—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs characterised by the dispositions of the protective arrangements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Abstract

Circuit électrique La présente description concerne un dispositif comprenant une couche de siliciure (S') recouvrant partiellement une zone dopée (111). Figure pour l’abrégé : Fig 3
FR1870781A 2018-06-29 2018-06-29 Circuit electronique Active FR3083367B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1870781A FR3083367B1 (fr) 2018-06-29 2018-06-29 Circuit electronique
US16/454,230 US11296072B2 (en) 2018-06-29 2019-06-27 Electronic circuit with electrostatic discharge protection
CN201920994542.3U CN210123732U (zh) 2018-06-29 2019-06-28 集成电路器件
CN201910575517.6A CN110660790B (zh) 2018-06-29 2019-06-28 具有静电放电保护的电子电路

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1870781A FR3083367B1 (fr) 2018-06-29 2018-06-29 Circuit electronique
FR1870781 2018-06-29

Publications (2)

Publication Number Publication Date
FR3083367A1 FR3083367A1 (fr) 2020-01-03
FR3083367B1 true FR3083367B1 (fr) 2021-07-23

Family

ID=65031564

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1870781A Active FR3083367B1 (fr) 2018-06-29 2018-06-29 Circuit electronique

Country Status (3)

Country Link
US (1) US11296072B2 (fr)
CN (2) CN210123732U (fr)
FR (1) FR3083367B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3083367B1 (fr) * 2018-06-29 2021-07-23 St Microelectronics Sa Circuit electronique

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7202114B2 (en) * 2004-01-13 2007-04-10 Intersil Americas Inc. On-chip structure for electrostatic discharge (ESD) protection
US7609493B1 (en) * 2005-01-03 2009-10-27 Globalfoundries Inc. ESD protection circuit and method for lowering capacitance of the ESD protection circuit
US7098513B2 (en) * 2005-01-17 2006-08-29 International Business Machines Corporation Low trigger voltage, low leakage ESD NFET
US7619863B2 (en) * 2006-07-06 2009-11-17 Stmicroelectronics, Sa Gated thyristor and related system and method
US8455947B2 (en) * 2009-02-18 2013-06-04 Infineon Technologies Ag Device and method for coupling first and second device portions
FR2976725B1 (fr) * 2011-06-15 2013-06-28 St Microelectronics Sa Dispositif semiconducteur bidirectionnel declenchable utilisable sur silicium sur isolant
US9236372B2 (en) * 2011-07-29 2016-01-12 Freescale Semiconductor, Inc. Combined output buffer and ESD diode device
CN202373579U (zh) * 2011-12-29 2012-08-08 中国科学院微电子研究所 一种esd防护电阻
US20140203368A1 (en) * 2013-01-22 2014-07-24 Mediatek Inc. Electrostatic discharge protection device
KR102059863B1 (ko) * 2013-08-30 2019-12-30 삼성전자주식회사 반도체 소자 및 그 제조 방법
US9287254B2 (en) * 2014-01-30 2016-03-15 Stmicroelectronics S.A. Electronic device and protection circuit
CN104392992B (zh) * 2014-12-05 2017-04-19 中国科学院上海微系统与信息技术研究所 一种基于soi的硅控整流器esd保护器件结构
KR102653044B1 (ko) * 2015-09-01 2024-04-01 소니그룹주식회사 적층체
US9947649B1 (en) * 2017-04-17 2018-04-17 International Business Machines Corporation Large area electrostatic dischage for vertical transistor structures
FR3083367B1 (fr) * 2018-06-29 2021-07-23 St Microelectronics Sa Circuit electronique

Also Published As

Publication number Publication date
US20200006320A1 (en) 2020-01-02
US11296072B2 (en) 2022-04-05
FR3083367A1 (fr) 2020-01-03
CN210123732U (zh) 2020-03-03
CN110660790B (zh) 2025-08-26
CN110660790A (zh) 2020-01-07

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