WO2005074451A3 - Technique for perfecting the active regions of wide bandgap semiconductor nitride devices - Google Patents
Technique for perfecting the active regions of wide bandgap semiconductor nitride devices Download PDFInfo
- Publication number
- WO2005074451A3 WO2005074451A3 PCT/US2004/039792 US2004039792W WO2005074451A3 WO 2005074451 A3 WO2005074451 A3 WO 2005074451A3 US 2004039792 W US2004039792 W US 2004039792W WO 2005074451 A3 WO2005074451 A3 WO 2005074451A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- perfecting
- technique
- active regions
- wide bandgap
- bandgap semiconductor
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 150000004767 nitrides Chemical class 0.000 title 1
- 239000000463 material Substances 0.000 abstract 3
- 230000007547 defect Effects 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000011149 active material Substances 0.000 abstract 1
- 230000005693 optoelectronics Effects 0.000 abstract 1
- 238000000059 patterning Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/04—Pattern deposit, e.g. by using masks
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Abstract
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/768,747 | 2004-01-23 | ||
US10/768,747 US7198970B2 (en) | 2004-01-23 | 2004-01-23 | Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2005074451A2 WO2005074451A2 (en) | 2005-08-18 |
WO2005074451A3 true WO2005074451A3 (en) | 2005-12-08 |
WO2005074451B1 WO2005074451B1 (en) | 2006-03-16 |
Family
ID=34795819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2004/039792 WO2005074451A2 (en) | 2004-01-23 | 2004-11-22 | Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
Country Status (2)
Country | Link |
---|---|
US (2) | US7198970B2 (en) |
WO (1) | WO2005074451A2 (en) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
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US7198970B2 (en) * | 2004-01-23 | 2007-04-03 | The United States Of America As Represented By The Secretary Of The Navy | Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
DE102005010477A1 (en) * | 2005-03-04 | 2006-09-07 | Daimlerchrysler Ag | Device and method for processing prioritized control processes |
US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
WO2006125040A2 (en) * | 2005-05-17 | 2006-11-23 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures with reduced dislocation defect densities related methods for device fabrication |
US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
US20070054467A1 (en) * | 2005-09-07 | 2007-03-08 | Amberwave Systems Corporation | Methods for integrating lattice-mismatched semiconductor structure on insulators |
US7777250B2 (en) | 2006-03-24 | 2010-08-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures and related methods for device fabrication |
WO2008030574A1 (en) | 2006-09-07 | 2008-03-13 | Amberwave Systems Corporation | Defect reduction using aspect ratio trapping |
US8421119B2 (en) * | 2006-09-13 | 2013-04-16 | Rohm Co., Ltd. | GaN related compound semiconductor element and process for producing the same and device having the same |
WO2008039534A2 (en) | 2006-09-27 | 2008-04-03 | Amberwave Systems Corporation | Quantum tunneling devices and circuits with lattice- mismatched semiconductor structures |
US7799592B2 (en) | 2006-09-27 | 2010-09-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Tri-gate field-effect transistors formed by aspect ratio trapping |
US20080187018A1 (en) * | 2006-10-19 | 2008-08-07 | Amberwave Systems Corporation | Distributed feedback lasers formed via aspect ratio trapping |
US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
WO2008124154A2 (en) | 2007-04-09 | 2008-10-16 | Amberwave Systems Corporation | Photovoltaics on silicon |
US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
DE112008002387B4 (en) | 2007-09-07 | 2022-04-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure of a multijunction solar cell, method of forming a photonic device, photovoltaic multijunction cell and photovoltaic multijunction cell device, |
US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
US20100072515A1 (en) | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
JP5416212B2 (en) | 2008-09-19 | 2014-02-12 | 台湾積體電路製造股▲ふん▼有限公司 | Device formation by epitaxial layer growth |
US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
CN102379046B (en) | 2009-04-02 | 2015-06-17 | 台湾积体电路制造股份有限公司 | Devices formed from a non-polar plane of a crystalline material and method of making the same |
US9396941B2 (en) | 2010-09-17 | 2016-07-19 | The United States Of America, As Represented By The Secretary Of The Navy | Method for vertical and lateral control of III-N polarity |
US9123533B2 (en) * | 2012-08-10 | 2015-09-01 | Avogy, Inc. | Method and system for in-situ etch and regrowth in gallium nitride based devices |
CN106611787A (en) * | 2015-10-26 | 2017-05-03 | 联华电子股份有限公司 | A semiconductor structure and a manufacturing method thereof |
CN111755338B (en) * | 2019-03-26 | 2022-08-23 | 深圳清力技术有限公司 | Atomic-level smooth electric connection sheet on surface of integrated device and preparation method thereof |
CN112531070A (en) * | 2020-11-25 | 2021-03-19 | 厦门大学 | Core-shell nano-pillar array-based deep ultraviolet detector and preparation method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US3864592A (en) * | 1973-03-22 | 1975-02-04 | Rca Corp | Electroluminescent semiconductor display |
US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
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US3864594A (en) * | 1969-12-31 | 1975-02-04 | Westinghouse Electric Corp | Protection system for an image tube |
US3683240A (en) * | 1971-07-22 | 1972-08-08 | Rca Corp | ELECTROLUMINESCENT SEMICONDUCTOR DEVICE OF GaN |
US4637127A (en) * | 1981-07-07 | 1987-01-20 | Nippon Electric Co., Ltd. | Method for manufacturing a semiconductor device |
US5006914A (en) * | 1988-12-02 | 1991-04-09 | Advanced Technology Materials, Inc. | Single crystal semiconductor substrate articles and semiconductor devices comprising same |
US4971928A (en) * | 1990-01-16 | 1990-11-20 | General Motors Corporation | Method of making a light emitting semiconductor having a rear reflecting surface |
JP2941349B2 (en) * | 1990-04-06 | 1999-08-25 | 株式会社日立製作所 | Super lattice APD |
US5093576A (en) * | 1991-03-15 | 1992-03-03 | Cree Research | High sensitivity ultraviolet radiation detector |
US5741360A (en) * | 1994-08-12 | 1998-04-21 | Optoelectronics Technology Research Corporation | Method of growing a crystal of a compound semiconductor at a low temperature |
JPH09237913A (en) * | 1995-12-28 | 1997-09-09 | Fuji Xerox Co Ltd | Semiconductor photosensitive element and its manufacture |
US5802232A (en) * | 1996-02-16 | 1998-09-01 | Bell Communications Research, Inc. | Bonded structure with portions of differing crystallographic orientations, particularly useful as a non linear optical waveguide |
US6006914A (en) * | 1998-03-26 | 1999-12-28 | Moore, Jr.; Frederick James | Golf souvenir holder |
US6177688B1 (en) * | 1998-11-24 | 2001-01-23 | North Carolina State University | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
US6177359B1 (en) * | 1999-06-07 | 2001-01-23 | Agilent Technologies, Inc. | Method for detaching an epitaxial layer from one substrate and transferring it to another substrate |
US6812053B1 (en) * | 1999-10-14 | 2004-11-02 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
KR101288489B1 (en) * | 2002-04-15 | 2013-07-26 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | Non-polar (Al,B,In,Ga)N Quantum Well and Heterostructure Materials and Devices |
US7012314B2 (en) * | 2002-12-18 | 2006-03-14 | Agere Systems Inc. | Semiconductor devices with reduced active region defects and unique contacting schemes |
US7221010B2 (en) * | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
US7198970B2 (en) | 2004-01-23 | 2007-04-03 | The United States Of America As Represented By The Secretary Of The Navy | Technique for perfecting the active regions of wide bandgap semiconductor nitride devices |
-
2004
- 2004-01-23 US US10/768,747 patent/US7198970B2/en not_active Expired - Fee Related
- 2004-11-22 WO PCT/US2004/039792 patent/WO2005074451A2/en active Application Filing
-
2006
- 2006-08-02 US US11/461,904 patent/US7470989B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3864592A (en) * | 1973-03-22 | 1975-02-04 | Rca Corp | Electroluminescent semiconductor display |
US6051849A (en) * | 1998-02-27 | 2000-04-18 | North Carolina State University | Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer |
Also Published As
Publication number | Publication date |
---|---|
US7470989B2 (en) | 2008-12-30 |
US7198970B2 (en) | 2007-04-03 |
WO2005074451A2 (en) | 2005-08-18 |
US20070004106A1 (en) | 2007-01-04 |
US20050164475A1 (en) | 2005-07-28 |
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