WO2005073148A1

WO2005073148A1 - Dielectric porcelain composition for high frequency wave, dielectric resonator, dielectric filter, dielectric duplexer, and communication equipment

Info

Publication number: WO2005073148A1
Application number: PCT/JP2005/000030
Authority: WO
Inventors: Hiroshige Adachi
Original assignee: Murata Manufacturing Co., Ltd.
Priority date: 2004-01-28
Filing date: 2005-01-05
Publication date: 2005-08-11
Also published as: JP2007217191A

Abstract

[PROBLEMS] To provide a dielectric porcelain composition for a high frequency wave, which has a high ϵr and a high Q X f value and also exhibits a reduced absolute value of τf, and thus exhibits excellent dielectric characteristics. [MEANS FOR SOLVING PROBLEMS] A dielectric porcelain composition which comprises 100 parts by weight of a primary component having a composition represented by an empirical formula: Ba{MgaCo1-a)x(TabNb1-b)1-x}vOw [w is a positive number required for the composition to have electrical neutrality as a porcelain], wherein a, b, x and v take respective numbers in the following ranges, respectively, 0.1 ≤ a ≤ 0.9, 0.1 ≤ b ≤ 0.9, 0.315 ≤ x ≤ 0.345 and 0.98 ≤ v ≤ 1.03, and 0.001 to 1.0 parts by weight of CuO and/or CeO2 as a sub-component.

Description

High frequency dielectric ceramic composition, dielectric resonator, dielectric filter, dielectric duplexer, and communication device

Technical field

The present invention relates to a high-frequency dielectric ceramic composition used in a high-frequency region such as a microwave and a millimeter wave, and a dielectric resonator, a dielectric filter, a dielectric duplexer, and a dielectric resonator formed using the same. The present invention relates to a communication device.

Background art

[0002] Dielectric ceramics are widely used as materials for forming dielectric resonators, circuit boards, and the like in high-frequency regions such as microwaves and millimeter waves.

[0003] Such dielectric ceramics for high frequencies, particularly when used for applications such as dielectric resonators and dielectric filters, require the following dielectric properties: (1) the wavelength of electromagnetic waves in a dielectric S 1Z (E ^1/2 ) to meet the demand for miniaturization, high dielectric constant (ε), (2) low dielectric loss, that is, high Q value, (3) resonance The temperature stability of the frequency is excellent, that is, the temperature coefficient (τ) of the resonance frequency is around OppmZ ° C.

And the like.

[0004] Here, τ is a slope (直線) obtained by linearly approximating the resonance frequency temperature curve using the resonance frequency (f) at 25 ° C and the f2555 value of the resonance frequency (f) at 55 ° C. The first derivative), and its value is calculated by the formula of τ = (ff) / [f '(55 ° 〇—25 ° C)].

The

Conventionally, as a dielectric ceramic composition for high frequency that can satisfy the above-mentioned requirements, for example, Ba (Mg, Co, Ta, Nb) 0 system described in Patent Document 1 or Ba (Mg, Co, Ta, Nb) 0 described in Patent Document 2 Mg, C

Three

o, Ta, Nb) Many systems have already been proposed, including AlO, CrO, YO, and MnO added to 0.

3 2 3 2 3 2 3 2 3

It is.

Patent Document 1: JP-A-61-224211

Patent Document 2: Japanese Patent Publication No. 5-15006

Disclosure of the invention Problems the invention is trying to solve

[0006] In recent years, there has been an increasing demand for lower loss and smaller size of electronic devices, and the dielectric characteristics required for high-frequency dielectric porcelain for applications such as dielectric resonators and dielectric filters have been increased.

There is a need for better things. In particular, there is an increasing demand for a material having high ε, high Q value, and high temperature stability (τ force near SOppmZ ° C) even when used in the high frequency range.

[0007] Here, a dielectric porcelain composition having a composition system described in Patent Document 1 and Patent Document 2 has an ε force of about 26 to 32 and a direct (1 GHz) force of about 120,000 to 1 It is 150,000, and τ is an excellent high frequency dielectric material that can be controlled near 0 ± 6ppmZ ° C.

[0008] However, with the recent advancement of communication technology, high-performance electronic components for high frequency are needed to support it, and it is indispensable for the development of such electronic components for high frequency. There is a need for a high-frequency dielectric material exhibiting even better characteristics than before.

[0009] An object of the present invention is to solve the above problems, and has a high ε and a high Q value even when used in a high frequency region such as a microwave or a millimeter wave, and has an absolute value of τ. Small value rf

Another object of the present invention is to provide a high frequency dielectric ceramic composition. Further, the present invention provides a dielectric resonator, a dielectric filter, and a dielectric duplexer using the dielectric ceramic composition for high frequencies.

, And communicator devices together!

Means for solving the problem

[0010] The dielectric ceramic composition for a high frequency wave according to claim 1 of the present invention has a composition formula: Ba {(MgCao) (TaNb)} O (where w is an electrical neutrality as a porcelain). Positive needed to keep

1 a X b 1— b 1-χ ν w

A), b, x, and v in the above composition formula are 0.1 l≤a≤0.9, 0.l≤b≤0.9, 0.315≤x ≤0.345, 0.98≤v≤l.03 100 parts by weight of the main component in the range of CuO and Z or CeO as minor components in a total amount of 0.

2

001-1.0 parts by weight.

[0011] Further, the dielectric resonator according to claim 2 of the present invention is a dielectric resonator that operates by electromagnetically coupling a dielectric porcelain to an input / output terminal, wherein the dielectric porcelain operates. Is characterized by comprising the dielectric ceramic composition for high frequencies according to claim 1.

[0012] Further, the dielectric filter according to claim 3 of the present invention is a dielectric filter according to claim 2. A vibrator and external coupling means connected to the input / output terminal of the dielectric resonator.

[0013] Furthermore, the dielectric duplexer according to claim 4 of the present invention has at least two dielectric filters, input / output connection means connected to each of the dielectric filters, and common to the dielectric filters. A dielectric duplexer comprising: an antenna connecting means connected to the dielectric filter, wherein at least one of the dielectric filters is the dielectric filter according to claim 3.

[0014] Further, according to a fifth aspect of the present invention, there is provided a communication device, comprising: the dielectric duplexer according to the fourth aspect; and a transmission circuit connected to at least one input / output connection means of the dielectric duplexer. And a receiving circuit connected to at least one input / output connecting means different from the above-mentioned input / output means connected to the transmitting circuit, and connected to an antenna connecting means of the dielectric duplexer. An antenna is provided.

The invention's effect

According to the present invention, the composition formula: Ba {(MgCo) (TaNb)} O (where w is porcelain)

a 1 a x b 1 b 1-χ v w

A, b, x, and V force in the above compositional formulas 0.1, 0.1, 0.1, and 0.1. ≤b≤0.9, 0.315≤x≤0.345, 0.98≤v≤l.03 [100 major components by weight] Ingredients are contained in a total amount of 0.001-1.0 parts by weight

2

Therefore, when no sub-component is contained for the same main component composition, that is, as compared with the conventional dielectric ceramic composition,

without reducing r or increasing the absolute value of f

In addition, a QXf value can be greatly improved, and a high-frequency dielectric ceramic composition exhibiting more excellent microwave dielectric properties can be obtained.

[0016] Therefore, for example, the dielectric resonator mounted on a base station, a mobile phone, a personal wireless device, a satellite broadcast receiver, and the like is reduced in size, the dielectric loss is reduced, and the temperature stability of the resonance frequency is improved. Things. As a result, by using such a dielectric resonator, it is possible to advantageously configure a dielectric filter, a dielectric duplexer, and a communication device having reduced size and excellent characteristics.

Brief Description of Drawings FIG. 1 is a cross-sectional view schematically showing a basic structure of a dielectric resonator 1 formed by using the dielectric ceramic composition for high frequencies of the present invention.

FIG. 2 is a block diagram illustrating an example of a communication device configured using the dielectric resonator illustrated in FIG. 1.

Explanation of symbols

[0018] 1 dielectric resonator

2 Metal case

3 Support

4 Dielectric porcelain

5, 6 coupling loop

7, 8 Coaxial cable

10 Communication equipment

12 Dielectric duplexer

14 Transmission circuit

16 Receiver circuit

18 antenna

20 Input connection means

22 Output connection means

24 Antenna connection means

26, 28 Dielectric filter

30 External coupling means

BEST MODE FOR CARRYING OUT THE INVENTION

First, an embodiment of a dielectric resonator, a dielectric filter, a dielectric duplexer, and a communication device of the present invention to which the dielectric ceramic composition for high frequencies of the present invention is applied will be described.

FIG. 1 is a cross-sectional view schematically showing a basic structure of a dielectric resonator of the present embodiment constituted by using the dielectric ceramic composition for high frequencies of the present invention.

The dielectric resonator 1 includes a metal case 2 as shown in FIG. A columnar dielectric porcelain 4 supported by a support base 3 is arranged. Then, a coupling loop 5 is formed between the center conductor and the outer conductor of the coaxial cable 7 to serve as an input terminal. Also, a coupling loop 6 is formed between the center conductor and the outer conductor of the coaxial cable 8 to serve as an output terminal. Each terminal is held by the metal case 2 with the outer conductor and the metal case 2 electrically connected.

The dielectric porcelain 4 operates by being electromagnetically coupled to the input terminal and the output terminal, and outputs only a signal of a predetermined frequency that is input to the input terminal.

The dielectric ceramic 4 provided in such a dielectric resonator 1 is made of the high frequency dielectric ceramic composition of the present invention.

The dielectric resonator 1 shown in FIG. 1 is a TE01 δ mode resonator used in a base station or the like, but the high frequency dielectric ceramic composition of the present invention has another の mode, ΤΜ mode. Mode and ΤΕΜ mode can be applied to dielectric resonators as well.

FIG. 2 is a block diagram illustrating an example of a communication device configured using the above-described dielectric resonator 1.

The communication device 10 shown in FIG. 2 includes a dielectric duplexer 12, a transmission circuit 14, a reception circuit 16, and an antenna 18.

[0027] The transmission circuit 14 is connected to the input connection means 20 of the dielectric duplexer 12, and the reception circuit 16 is connected to the output connection means 22 of the dielectric duplexer 12.

[0028] The antenna 18 is connected to the antenna connection means 24 of the dielectric duplexer 12.

[0029] The dielectric duplexer 12 includes two dielectric filters 26 and 28. The dielectric filters 26 and 28 are configured by connecting external coupling means to the dielectric resonator of the present invention. In the illustrated embodiment, for example, the external coupling means 30 is connected to the input / output terminal of the dielectric resonator 1 shown in FIG. 1, respectively, to form the dielectric filters 26 and 28, respectively. One dielectric filter 26 is connected between the input connection means 20 and the other dielectric filter 28, and the other dielectric filter 28 is connected to the one dielectric filter 26 and the output connection means 22. Connected between. Next, like the dielectric ceramic 4 provided in the dielectric resonator 1 shown in FIG. 1, the high frequency dielectric ceramic composition of the present invention, which is advantageously used in a high frequency region, is used. I will explain.

The high frequency dielectric porcelain composition of the present invention has a composition formula: Ba {(MgCo) (TaNb) a1axb1—b

} O (where w is a positive number necessary to maintain electrical neutrality as porcelain)

1—X w

A, b, x, and f in the above-mentioned formula.0.1.l≤a≤0.9, 0.l≤b≤0.9, 0.315≤x≤0. 345, 0.98≤v≤l. 03, 100 parts by weight of main component in the range of CuO and Z or CeO subcomponents in a total amount of 0.001-1.0 weight

2

Parts.

[0032] In the present invention, an example which is the basis for selecting the specific composition as described above! This will be described below.

Example

First, high-purity barium carbonate (BaCO 3) and magnesium oxide

Three

(MgO), cobalt carbonate (CoCO), tantalum oxide (TaO), and niobium oxide (Nb

3 25 2 o) were prepared.

Five

[0034] In these starting material powders, a, b, x, and v shown in Table 1 and Table 3 have the composition formula: Ba {(MgCao) (TaNb)} O (where w is electric power as porcelain). Positive required to maintain neutrality

1 a X b 1— b 1-χ ν w

), And the prepared starting material powders are wet-mixed using a ball mill for 16 hours to disperse them uniformly, and then subjected to dehydration and drying treatments to prepare the adjusted powders. Got.

[0035] The obtained adjusted powder was calcined at a temperature of 1100 to 1300 ° C for 3 hours to prepare a main component raw material powder.

Next, powders of high-purity copper oxide (CuO) and cerium oxide (Ce 2 O 3) were prepared as starting materials for the auxiliary components.

2

[0037] Based on 100 parts by weight of the main component raw material powder, these auxiliary component starting raw material powders are prepared so as to have the weight parts shown in Table 1 and Table 3, respectively, and an appropriate amount of a binder is added thereto. Was again wet-pulverized using a ball mill for 16 hours, and then subjected to dehydration and drying treatment to prepare respective firing powders. [0038] Then, these calcined powders, respectively 1. 47 X 10 ² - 2. 45 after press-molded circular plate shape at a pressure of X 10 ² MPa, these firing powder 1450- 1600 ° C At a temperature of 4 to 24 hours in the air or in an atmosphere of high oxygen concentration to obtain a disc-shaped sinter having a diameter of 10 mm and a thickness of 5 mm as the sample No. 1-98 shown in Table 1 I got a body.

[0039] With respect to the sintered body of the sample No. 1-98, the measurement frequency (f) was set to 6 to 10 GHz, and the resonance point peak was measured by the dielectric resonator method with the both ends short-circuited. Ε of each sample was determined from the point peak height and the sample size. In addition, the peak force at the resonance point was obtained for the Q value of each sample, and converted to the QXf value of each sample according to the resonance frequency at that time. In addition, the resonance frequency of each sample was measured by the cavity method in the TE01 δ mode, and τ was measured in the temperature range of 25 to 55 ° C.

f

[0040] The ε and Q corresponding to the sintered body of the sample of Sample No. 118 measured as described above were used.

Table 1 shows the X f value and τ respectively.

f Shown in Table 3.

[Table 1]

Sample Ba {CMg _a Co-, _a ) x (Ta _b Nb-, _b ) _Λ J _v O _w CuO Ce0 ₂ Relative permittivity Temperature coefficient of resonance frequency No. “^ ab [parts by weight] [parts by weight] [GHz ] r C]

* 1 0 0.5 0.33 1.01 0 0 30.5 87,000-7-2 x 2 0 0.5 0.33 1.01 0.05 0 30.5 95,000 -7.3

* 3 0 0.5 0.33 1.01 0 0.05 30.5 91,000-7-2 x 0.1 0.5 0.33 1.01 0 0 30.0 103,000 -5.8

5 0.1 0.5 0.33 1.01 0.05 0 30.0 123,000 -5.8

6 0.1 0.5 0.33 1.01 0 0.05 30.0 126,000 -5.9 7 0.25 0.5 0.33 1.01 0 0 29.5 121 000-2 0

8 0.25 0.5 0.33 1.01 0.05 0 29.5 142,000 -2.2

9 0.25 0.5 0.33 1.01 0 0.05 29.5 139,000-2 0

* 10 0.5 0.5 0.33 1.01 0 0 29.0 140,000 1.0

1 1 0.5 0.5 0.33 1.01 0.05 0 29.0 152,000 1 0

12 0.5 0.5 0.33 1.01 0 0.05 29.0 150,000 0.9

13 0.5 0.5 0.33 1.01 0.025 0.025 29.0 152,000 1 -2

* 14 0.75 0.5 0.33 1.01 0 0 28.5 159,000 4.2

15 0.75 0.5 0.33 1.01 0.05 0 28.5 168,000 4.2

16 0.75 0.5 0.33 1.01 0 0.05 28.5 171 000 4.0

* 17 0.9 0.5 0.33 1.01 0 0 28.0 179,000 8.1

18 0.9 0.5 0.33 1.01 0.05 0 28.0 185,000 8.0

19 0.9 0.5 0.33 1.01 0 0.05 28.0 188,000 8.2 20 1.0 0.5 0.33 1.01 0 0 27.5 80,000 8.8

* 21 1.0 0.5 0.33 1.01 0.05 0 27.5 89,000 8.8 22 1.0 0.5 0.33 1.01 0 0.05 27.5 93,000 8.7 23 0.5 0 0.33 1.01 0 0 34.0 81,000 7.5

* 24 0.5 0 0.33 1.01 0.05 0 34.0 90,000 7.7 25 0.5 0 0.33 1.01 0 0.05 34.0 92,000 7.6

* 26 0.5 0.1 0.33 1.01 0 0 33.0 120,000 6-6

27 0.5 0-1 0.33 1.01 0.05 0 33.0 143,000 6.8

28 0.5 0.1 0.33 1.01 0 0.05 33.0 138,000 7 0 29 0.5 0.25 0.33 1.01 0 0 31.0 131,000 4.3

30 0.5 0.25 0.33 1.01 0.05 0 31.0 148,000 4.2

31 0.5 0.25 0.33 1.01 0 0.05 31.0 150,000 4.3

* 32 0.5 0.75 0.33 1.01 0 0 27.0 159,000-20

33 0.5 0.75 0.33 1.01 0.05 0 27.0 171 000 -2.0

34 0.5 0.75 0.33 1.01 0 0.05 27.0 170,000-2 0 35 0.5 0-9 0.33 1.01 0 0 25.0 182,000 -5.5

36 0.5 0.9 0.33 1.01 0.05 0 25.0 192,000 -5.3

37 0.5 0-9 0.33 1.01 0 0.05 25.0 188,000 -5.3

* 38 0.5 1.0 0.33 1.01 0 0 24.0 196,000-6-1 39 0.5 1 0 0.33 1.01 0.05 0 24.0 198,000 -6.1

* 40 0.5 1.0 0.33 1.01 0 0.05 24.0 201,000 -5.9 2]

Sample CuO Ce ₂ Dielectric constant Qxf value Temperature coefficient of resonance frequency No. b [parts by weight] [parts by weight] ε r [GHz] _f [ppm / C

* 41 0.5 0.5 0.31 1.01 0 0 28.0 69,000 -3.8

* 42 0.5 0.5 0.31 1.01 0.05 0 28.0 75,000-3-9 43 0.5 0.5 0.31 1.01 0 0.05 28.0 78,000-3.9

* 44 CD 0.5 0.5 0.315 1.01 0 0 28.0 110,000-30

45 0.5 0.5 0.315 1.01 0.05 0 28.0 129,000 -3.0

46 0.5 0.5 0.315 1.01 0 0.05 28.0 130,000-3-1

47 0.5 0.5 0.315 1.01 0.025 0.025 28.0 130,000 -3.2

* 48 0.5 〇

0 0.5 0.32 1.01 0 0 28.5 119,000 -0.8

49 0.5 0.5 0.32 1.01 0.05 0 28.5 135,000 -1.0

50 0.5 0.5 0.32 1.01 0 0.05 28.5 136,000-1 0 51 0.5 0.5 0.34 1.01 0 0 29.0 150,000 2.8

52 0.5 0.5 0.34 1.01 0.05 0 29.0 158,000 2.8

53 0.5 0.5 0.34 1.01 0 0.05 29.0 165,000 2.9

* 54 0.5 0.5 0.345 1.01 0 0 29.5 141,000 5.0

55 0.5 0.5 0.345 1.01 0.05 0 29.5 165,000 5.1

56 0.5 0.5 0.345 1.01 0 0.05 29.5 162,000 4.9

57 0.5 0.5 0.345 1.01 0.025 0.025 29.5 168,000 4.9

* 58 0.5 0.5 0.35 1.o01 0 0 29.5 81,000 6.1

* 59 0.5 0.5 0.35 1.01 0.05 0 29.5 92,000 6.2

* 60 0.5 0.5 0.35 1.01 0 0.05 29.5 89,000 6.2

* 61 0.5 0.5 0.33 0.97 0 0 Not sintered

* 62 0.5 0.5 0.33 0.97 0.05 0 Not sintered

* 63 0.5 0.5 0.33 0.97 0 0.05 Not sintered

* 64 0.5 0.5 0.33 0.98 0 0 27.0 106,000 8.8

65 0.5 0.5 0.33 0.98 0.05 0 27.0 130,000 8.8

66 0.5 0.5 0.33 0.98 0 0.05 27.0 127,000 8.8

67 0.5 0.5 0.33 0.98 0.025 0.025 27.0 127,000 8.8

* 68 0.5 0.5 0.33 0.99 0 0 28.0 110,000 6.2

69 0.5 0.5 0.33 0.99 0.05 0 28.0 136,000 6-3

70 0.5 0.5 0.33 0.99 0 0.05 28.0 133,000 6.1

0.5 0.5 0.33 1.00 0 0 29.0 122,000 0.1

72 0.5 0.5 0.33 1 00 0.05 0 29.0 142,000 0

73 0.5 0.5 0.33 1.00 0 0.05 29.0 144,000 0.1

* 74 0.5 0.5 0.33 1.02 0 0 29.0 130,000 5.9

75 0.5 0.5 0.33 1.02 0.05 0 29.0 153,000 5.9

76 0.5 0.5 0.33 1.02 0 0.05 29.0 153,000 5.6 ΊΊ 0.5 0.5 0.33 1.03 0 0 28.0 105,000 9.1

78 0.5 0.5 0.33 1.03 0.05 0 28.0 113,000 8.8

79 0-5 0.5 0.33 1.03 0 0.05 28.0 112,000 8.8

80 0.5 0.5 0.33 1.03 0.025 0.025 28.0 113,000 8.9

* 81 0.5 0.5 0.33 1.04 0 0 27.5 72,000 11.2

* 82 0.5 0.5 0.33 1.04 0.05 0 27.5 79,000 11-2

* 83 0.5 0.5 0.33 1.04 0 0.05 27.5 79,000 11.1

[Table 3]

[0044] In Table 1, in Table 3, samples numbered with * are samples outside the scope of the present invention. [0045] As shown in Table 1 and Table 3, the main component is a composition formula: Ba {(MgCo) (TaNb)} O (a 1 axb 1 b1-xvw, and w is an electric (A positive number necessary to maintain neutrality), and a, b, x, and f in the above Itokatsu formulas 0.l≤a≤0.9, 0.l≤b≤ Sample numbers in the range 0.9, 0.315≤x≤0.345, 0.98≤v≤l.03 4-1 19, 26--37, 44-57, 64--80, and 84-- According to the dielectric porcelain material according to 98, the ε force is as large as 25.0-33.0, the QX f-value force is as high as S100,000 or more, and the absolute value of τ is within 10 ppm / ° C. Small f

έ Excellent microwave dielectric properties can be obtained.

In particular, in the sintered body (dielectric ceramic composition) according to each of the samples, CuO and subcomponents of Ζ or CeO were added in a total amount of 0.001 to 100 parts by weight of the main component. —1.0 weight

2

Sample No. 5, 6, 8, 9, 11, 1-1, 13, 15, 16, 18, 19, 27, 28, 30, 31, 33, 34, 36, 37 , 45—47, 49, 50, 52, 53, 55—57, 65—67, 69, 70, 72, 73, 75, 76, 78—80, 84—87, 89—92, and sample number 94 According to the dielectric ceramic composition according to I-97, for example, as can be seen from the comparative power of Sample No. 10 (conventional dielectric ceramic composition), Sample Nos. Compared to the case where no subcomponent is contained, ε is reduced or τf

Q X value can be greatly improved without increasing the absolute value of f

It was found that even better microwave dielectric properties could be obtained.

[0047] In contrast, samples outside the scope of the present invention will be considered.

[0048] First, when a <0.1 or a> 0.9, as shown in Sample Nos. 13 and 20 to 22, the QX f value of each sample is less than 100,000. And found that the QX f-value was low.o

Next, when b <0.1, as shown in Sample Nos. 23 to 25, it was found that each Q Xf value was less than 100, 000 and the Q Xf value was low. On the other hand, when b> 0.9, as shown in Sample Nos. 38-40, it was found that ε was lower than the ε force of each sample.

[0050] Next, when X is 0.315 or χ> 0.345, as shown in Sample Nos. 41-43 and 58-60, the QX f value of each sample is 100%. The QX f value was found to be low at less than, 000. Next, when v <0.98, as shown in Sample Nos. 61-63, it was found that sintering did not occur even at 1600 ° C., and the sinterability of each sample was reduced. Was. On the other hand, when ν> 1.03, as shown in sample numbers 81-83, the QX f value of each sample was less than 100,000, the QX f value was low, and the absolute value of τ was 10 ppm / Above ° C, large absolute value ff

It turned out.

[0052] Next, when the contents of the accessory components shown in Sample Nos. 88, 93 and 98 exceed 1.0 part by weight, for example, Sample No. 10 (conventional dielectric ceramic composition) and Sample No. 10 As can be seen from the comparative power of No. 88, it was found that the QXf value was lower than that of the conventional dielectric porcelain composition in the case where the subcomponent was contained with respect to the same main component composition.

[0053] The dielectric ceramic composition for high frequencies of the present invention may further contain a small amount of subcomponents within a range that does not impair the object of the present invention. For example, ZrO, SiO, Li 0, B

2 2 2 2

O, PbO, Bi O, MnO , NiO, Fe O, Cr O, 0. The VO like 01- 1.00 wt ^_0/0

3 2 3 2 2 3 2 3 2 5

By containing it, the firing temperature can be lowered by 20-30 ° C without deteriorating the characteristics of the dielectric porcelain.

Claims

The scope of the claims

[1] Composition: Ba {(Mg Co) (Ta Nb)} O (where w is the electric potential of porcelain)

a 1 a X b 1— b 1 ν w

A positive number necessary to maintain the property), a, b, x, and v in the above composition formula,

0.l≤a≤0.9,

0.l≤b≤0.9,

0.315≤x≤0.345,

0.98≤v≤l .03

100 parts by weight of main components in the range of CuO and Z or CeO

A dielectric ceramic composition for high frequency use, comprising 2 minutes and 0.001 to 1.0 parts by weight in total.

[2] A dielectric resonator in which the dielectric porcelain operates by being electromagnetically coupled to an input / output terminal, wherein the dielectric porcelain comprises the high-frequency dielectric porcelain composition according to claim 1. A dielectric resonator, characterized in that:

[3] A dielectric filter comprising: the dielectric resonator according to claim 2, and external coupling means connected to an input / output terminal of the dielectric resonator.

[4] A dielectric duplexer comprising at least two dielectric filters, input / output connection means connected to each of the dielectric filters, and antenna connection means commonly connected to the dielectric filters. 4. A dielectric duplexer, wherein at least one of the dielectric filters is the dielectric filter according to claim 3.

[5] The dielectric duplexer according to claim 4, a transmission circuit connected to at least one input / output connection unit of the dielectric duplexer, and the input / output unit connected to the transmission circuit. A communication device, comprising: a reception circuit connected to at least one different input / output connection unit; and an antenna connected to an antenna connection unit of the dielectric duplexer.