WO2005015962A3 - Plasma-strahlungsquelle und anordnung zur erzeugung eines gasvorhangs für plasma-strahlungsquellen - Google Patents

Plasma-strahlungsquelle und anordnung zur erzeugung eines gasvorhangs für plasma-strahlungsquellen Download PDF

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Publication number
WO2005015962A3
WO2005015962A3 PCT/DE2004/001802 DE2004001802W WO2005015962A3 WO 2005015962 A3 WO2005015962 A3 WO 2005015962A3 DE 2004001802 W DE2004001802 W DE 2004001802W WO 2005015962 A3 WO2005015962 A3 WO 2005015962A3
Authority
WO
WIPO (PCT)
Prior art keywords
plasma radiation
axis
nozzle
gas jet
debris
Prior art date
Application number
PCT/DE2004/001802
Other languages
English (en)
French (fr)
Other versions
WO2005015962A2 (de
Inventor
Max C Schuermann
Bernd Seher
Lutz Mueller
Thomas Missalla
Original Assignee
Jenoptik Mikrotechnik Gmbh
Max C Schuermann
Bernd Seher
Lutz Mueller
Thomas Missalla
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jenoptik Mikrotechnik Gmbh, Max C Schuermann, Bernd Seher, Lutz Mueller, Thomas Missalla filed Critical Jenoptik Mikrotechnik Gmbh
Priority to US10/567,942 priority Critical patent/US7328885B2/en
Priority to JP2006522888A priority patent/JP4766695B6/ja
Publication of WO2005015962A2 publication Critical patent/WO2005015962A2/de
Publication of WO2005015962A3 publication Critical patent/WO2005015962A3/de

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—X-ray radiation generated from plasma
    • H05G2/003—X-ray radiation generated from plasma being produced from a liquid or gas
    • H05G2/005—X-ray radiation generated from plasma being produced from a liquid or gas containing a metal as principal radiation generating component

Abstract

Eine Plasma-Strahlungsquelle soll so verbessert werden, dass die durch den Einfluss von Debris begrenzte Lebensdauer der Optiken deutlich erhöht wird. Ein Gasvorhang, durch den die von einem Quellbereich in einer Vakuumkammer (1) ausgehende Strahlung (5) in einen definierten Raumwinkel zur Debris-Unterdrückung hindurch entlang einer Achse (X-X) der mittleren Ausbreitungsrichtung der Strahlung (5) abgestrahlt wird, geht als radial gerichteter Überschall-Gasstrahl (7) von einer auf der Achse (X-X) angeordneten Treibdüse (2) einer Gasstrahl-Vakuumpumpe (3) aus, ist auf eine zu der Achse (X-X) koaxial angeordnete ringförmige Mischdüse (8) der Gasstrahl-Vakuumpumpe (3) gerichtet und über einen Diffuser (10) aus der Vakuumkammer (1) herausgeführt. Damit werden Quellkonzepte mit optimaler Konversionseffizienz, aber hohem Debris verfügbar.
PCT/DE2004/001802 2003-08-12 2004-08-09 Plasma-strahlungsquelle und anordnung zur erzeugung eines gasvorhangs für plasma-strahlungsquellen WO2005015962A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US10/567,942 US7328885B2 (en) 2003-08-12 2004-08-09 Plasma radiation source and device for creating a gas curtain for plasma radiation sources
JP2006522888A JP4766695B6 (ja) 2003-08-12 2004-08-09 プラズマ放射線源、ガスカーテンを生成するための装置および気体ジェット真空ポンプ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10337667A DE10337667B4 (de) 2003-08-12 2003-08-12 Plasma-Strahlungsquelle und Anordnung zur Erzeugung eines Gasvorhangs für Plasma-Strahlungsquellen
DE10337667.4 2003-08-12

Publications (2)

Publication Number Publication Date
WO2005015962A2 WO2005015962A2 (de) 2005-02-17
WO2005015962A3 true WO2005015962A3 (de) 2005-07-28

Family

ID=34129584

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/001802 WO2005015962A2 (de) 2003-08-12 2004-08-09 Plasma-strahlungsquelle und anordnung zur erzeugung eines gasvorhangs für plasma-strahlungsquellen

Country Status (3)

Country Link
US (1) US7328885B2 (de)
DE (1) DE10337667B4 (de)
WO (1) WO2005015962A2 (de)

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US7671349B2 (en) 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
DE102005015274B4 (de) * 2005-03-31 2012-02-23 Xtreme Technologies Gmbh Strahlungsquelle zur Erzeugung kurzwelliger Strahlung
DE102005020521B4 (de) * 2005-04-29 2013-05-02 Xtreme Technologies Gmbh Verfahren und Anordnung zur Unterdrückung von Debris bei der Erzeugung kurzwelliger Strahlung auf Basis eines Plasmas
JP4904809B2 (ja) 2005-12-28 2012-03-28 ウシオ電機株式会社 極端紫外光光源装置
JP4850558B2 (ja) * 2006-03-31 2012-01-11 キヤノン株式会社 光源装置、及びそれを用いた露光装置、デバイス製造方法
US20080237498A1 (en) * 2007-01-29 2008-10-02 Macfarlane Joseph J High-efficiency, low-debris short-wavelength light sources
CN102119365B (zh) * 2008-08-14 2013-06-05 Asml荷兰有限公司 辐射源、光刻设备和器件制造方法
DE102008049494A1 (de) * 2008-09-27 2010-04-08 Xtreme Technologies Gmbh Verfahren und Anordnung zum Betreiben von plasmabasierten kurzwelligen Strahlungsquellen
JP5559562B2 (ja) * 2009-02-12 2014-07-23 ギガフォトン株式会社 極端紫外光光源装置
JP2011054376A (ja) * 2009-09-01 2011-03-17 Ihi Corp Ｌｐｐ方式のｅｕｖ光源とその発生方法
KR101415886B1 (ko) 2009-09-01 2014-07-04 가부시키가이샤 아이에이치아이 플라즈마 광원
DE102012212394A1 (de) * 2012-07-16 2013-05-29 Carl Zeiss Smt Gmbh Abtrennvorrichtung und abtrennverfahren für projektionsbelichtungsanlagen
DE102012213927A1 (de) 2012-08-07 2013-06-06 Carl Zeiss Smt Gmbh Vorrichtung zur Erzeugung eines Gasvorhangs, Gasdüse und EUV-Lithographiesystem damit
DE102014102720B4 (de) * 2014-02-28 2017-03-23 Ushio Denki Kabushiki Kaisha Anordnung zum Kühlen einer plasmabasierten Strahlungsquelle mit einer metallischen Kühlflüssigkeit und Verfahren zur Inbetriebnahme einer solchen Kühlanordnung
DE102015200327A1 (de) 2015-01-13 2016-07-14 Carl Zeiss Smt Gmbh Anordnung zur Kontaminationsreduzierung in einer mikrolithographischen Projektionsbelichtungsanlage
US10955749B2 (en) 2017-01-06 2021-03-23 Asml Netherlands B.V. Guiding device and associated system
JP7193459B2 (ja) * 2017-01-06 2022-12-20 エーエスエムエル ネザーランズ ビー．ブイ． 極端紫外線源（ｅｕｖ源）
US10631392B2 (en) * 2018-04-30 2020-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. EUV collector contamination prevention

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US6493423B1 (en) * 1999-12-24 2002-12-10 Koninklijke Philips Electronics N.V. Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit
US20030053594A1 (en) * 2001-09-18 2003-03-20 Fornaciari Neal R. Discharge source with gas curtain for protecting optics from particles

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US4692934A (en) * 1984-11-08 1987-09-08 Hampshire Instruments X-ray lithography system
US4935624A (en) * 1987-09-30 1990-06-19 Cornell Research Foundation, Inc. Thermal-assisted electrospray interface (TAESI) for LC/MS
JPH10221499A (ja) * 1997-02-07 1998-08-21 Hitachi Ltd レーザプラズマｘ線源およびそれを用いた半導体露光装置並びに半導体露光方法
US5963616A (en) * 1997-03-11 1999-10-05 University Of Central Florida Configurations, materials and wavelengths for EUV lithium plasma discharge lamps
US6031241A (en) * 1997-03-11 2000-02-29 University Of Central Florida Capillary discharge extreme ultraviolet lamp source for EUV microlithography and other related applications
TW508980B (en) * 1999-12-23 2002-11-01 Koninkl Philips Electronics Nv Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit
GB0111204D0 (en) * 2001-05-08 2001-06-27 Mertek Ltd High flux,high energy photon source

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6493423B1 (en) * 1999-12-24 2002-12-10 Koninklijke Philips Electronics N.V. Method of generating extremely short-wave radiation, method of manufacturing a device by means of said radiation, extremely short-wave radiation source unit and lithographic projection apparatus provided with such a radiation source unit
US20030053594A1 (en) * 2001-09-18 2003-03-20 Fornaciari Neal R. Discharge source with gas curtain for protecting optics from particles

Also Published As

Publication number Publication date
WO2005015962A2 (de) 2005-02-17
JP2007502000A (ja) 2007-02-01
US7328885B2 (en) 2008-02-12
DE10337667B4 (de) 2012-03-22
US20060158126A1 (en) 2006-07-20
JP4766695B2 (ja) 2011-09-07
DE10337667A1 (de) 2005-03-24

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