WO2005006432A3 - Composant electronique et procede de fabrication - Google Patents

Composant electronique et procede de fabrication Download PDF

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Publication number
WO2005006432A3
WO2005006432A3 PCT/EP2004/006500 EP2004006500W WO2005006432A3 WO 2005006432 A3 WO2005006432 A3 WO 2005006432A3 EP 2004006500 W EP2004006500 W EP 2004006500W WO 2005006432 A3 WO2005006432 A3 WO 2005006432A3
Authority
WO
WIPO (PCT)
Prior art keywords
production
electronic component
component structures
contacts
contact surfaces
Prior art date
Application number
PCT/EP2004/006500
Other languages
German (de)
English (en)
Other versions
WO2005006432A2 (fr
Inventor
Christian Diekmann
Original Assignee
Epcos Ag
Christian Diekmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epcos Ag, Christian Diekmann filed Critical Epcos Ag
Publication of WO2005006432A2 publication Critical patent/WO2005006432A2/fr
Publication of WO2005006432A3 publication Critical patent/WO2005006432A3/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032—Packages or encapsulation
    • B81B7/007—Interconnections between the MEMS and external electrical signals
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/105—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/10—Mounting in enclosures
    • H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Manufacturing Of Electrical Connectors (AREA)
  • Manufacture Of Switches (AREA)

Abstract

L'invention concerne la formation de connexions électriques transversales verticales dans un substrat support présentant une surface sur laquelle des structures de composant sont fixées, ces structures de composant étant reliées à des surfaces de contact placées au-dessus des connexions transversales. Les structures de composant et les surfaces de contact sont placées dans des cavités formées lors de la soudure directe du substrat support ('Direct Wafer Bonding') au moyen d'une plaque de recouvrement présentant des évidements correspondants.
PCT/EP2004/006500 2003-07-10 2004-06-16 Composant electronique et procede de fabrication WO2005006432A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE2003131322 DE10331322A1 (de) 2003-07-10 2003-07-10 Elektronisches Bauelement und Verfahren zur Herstellung
DE10331322.2 2003-07-10

Publications (2)

Publication Number Publication Date
WO2005006432A2 WO2005006432A2 (fr) 2005-01-20
WO2005006432A3 true WO2005006432A3 (fr) 2005-04-28

Family

ID=33560034

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/006500 WO2005006432A2 (fr) 2003-07-10 2004-06-16 Composant electronique et procede de fabrication

Country Status (2)

Country Link
DE (1) DE10331322A1 (fr)
WO (1) WO2005006432A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200644165A (en) * 2005-05-04 2006-12-16 Icemos Technology Corp Silicon wafer having through-wafer vias
US7807550B2 (en) 2005-06-17 2010-10-05 Dalsa Semiconductor Inc. Method of making MEMS wafers
JP4889974B2 (ja) * 2005-08-01 2012-03-07 新光電気工業株式会社 電子部品実装構造体及びその製造方法
US7393758B2 (en) * 2005-11-03 2008-07-01 Maxim Integrated Products, Inc. Wafer level packaging process
WO2008077821A2 (fr) * 2006-12-21 2008-07-03 Continental Teves Ag & Co. Ohg Module d'encapsulage, procédé de fabrication et utilisation associés
KR100878410B1 (ko) 2007-07-11 2009-01-13 삼성전기주식회사 수정 진동자 제조방법
JP4481323B2 (ja) 2007-07-20 2010-06-16 日立オートモティブシステムズ株式会社 物理量センサ及びその製造方法
US9177893B2 (en) 2011-05-17 2015-11-03 Infineon Technologies Ag Semiconductor component with a front side and a back side metallization layer and manufacturing method thereof
US9444428B2 (en) * 2014-08-28 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonators comprising backside vias
DE102018108611B4 (de) * 2018-04-11 2019-12-12 RF360 Europe GmbH Gehäuse für elektrische Vorrichtung und Verfahren zum Herstellen des Gehäuses

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326702A (ja) * 1992-05-14 1993-12-10 Seiko Epson Corp シリコンとガラスの接合部材の製造方法
US5424245A (en) * 1994-01-04 1995-06-13 Motorola, Inc. Method of forming vias through two-sided substrate
EP0851492A2 (fr) * 1996-12-06 1998-07-01 Texas Instruments Incorporated Structure de substrat à montage de surface et méthode
WO2000041299A1 (fr) * 1998-12-30 2000-07-13 Thomson-Csf Dispositif a ondes acoustiques guidees dans une fine couche de materiau piezo-electrique collee par une colle moleculaire sur un substrat porteur et procede de fabrication
EP1071126A2 (fr) * 1999-07-23 2001-01-24 Agilent Technologies Inc Boítier à l'échelle d'une plaquette semiconductrice comprenant un micro-capuchon avec des vias
US6225145B1 (en) * 1998-09-07 2001-05-01 Electronics And Telecommunications Research Institute Method of fabricating vacuum micro-structure
US6242842B1 (en) * 1996-12-16 2001-06-05 Siemens Matsushita Components Gmbh & Co. Kg Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production
US20020093398A1 (en) * 2001-01-16 2002-07-18 Juha Ella Bulk acoustic wave resonator with a conductive mirror
WO2002058233A1 (fr) * 2001-01-18 2002-07-25 Infineon Technologies Ag Dispositifs filtrants et procede de fabrication de ces derniers
US20020113321A1 (en) * 2001-02-22 2002-08-22 Oleg Siniaguine Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326702A (ja) * 1992-05-14 1993-12-10 Seiko Epson Corp シリコンとガラスの接合部材の製造方法
US5424245A (en) * 1994-01-04 1995-06-13 Motorola, Inc. Method of forming vias through two-sided substrate
EP0851492A2 (fr) * 1996-12-06 1998-07-01 Texas Instruments Incorporated Structure de substrat à montage de surface et méthode
US6242842B1 (en) * 1996-12-16 2001-06-05 Siemens Matsushita Components Gmbh & Co. Kg Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production
US6225145B1 (en) * 1998-09-07 2001-05-01 Electronics And Telecommunications Research Institute Method of fabricating vacuum micro-structure
WO2000041299A1 (fr) * 1998-12-30 2000-07-13 Thomson-Csf Dispositif a ondes acoustiques guidees dans une fine couche de materiau piezo-electrique collee par une colle moleculaire sur un substrat porteur et procede de fabrication
EP1071126A2 (fr) * 1999-07-23 2001-01-24 Agilent Technologies Inc Boítier à l'échelle d'une plaquette semiconductrice comprenant un micro-capuchon avec des vias
US20020093398A1 (en) * 2001-01-16 2002-07-18 Juha Ella Bulk acoustic wave resonator with a conductive mirror
WO2002058233A1 (fr) * 2001-01-18 2002-07-25 Infineon Technologies Ag Dispositifs filtrants et procede de fabrication de ces derniers
US20020113321A1 (en) * 2001-02-22 2002-08-22 Oleg Siniaguine Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 141 (E - 1520) 9 March 1994 (1994-03-09) *

Also Published As

Publication number Publication date
WO2005006432A2 (fr) 2005-01-20
DE10331322A1 (de) 2005-02-03

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