WO2005006432A3 - Electronic component and method for production thereof - Google Patents

Electronic component and method for production thereof Download PDF

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Publication number
WO2005006432A3
WO2005006432A3 PCT/EP2004/006500 EP2004006500W WO2005006432A3 WO 2005006432 A3 WO2005006432 A3 WO 2005006432A3 EP 2004006500 W EP2004006500 W EP 2004006500W WO 2005006432 A3 WO2005006432 A3 WO 2005006432A3
Authority
WO
Grant status
Application
Patent type
Prior art keywords
production
component structures
method
electronic component
contacts
Prior art date
Application number
PCT/EP2004/006500
Other languages
German (de)
French (fr)
Other versions
WO2005006432A2 (en )
Inventor
Christian Diekmann
Original Assignee
Epcos Ag
Christian Diekmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/0032Packages or encapsulation
    • B81B7/007Interconnections between the MEMS and external electrical signals
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/10Mounting in enclosures
    • H03H9/1007Mounting in enclosures for bulk acoustic wave [BAW] devices
    • H03H9/105Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the BAW device
    • HELECTRICITY
    • H03BASIC ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/10Mounting in enclosures
    • H03H9/1064Mounting in enclosures for surface acoustic wave [SAW] devices
    • H03H9/1092Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a cover cap mounted on an element forming part of the surface acoustic wave [SAW] device on the side of the IDT's
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/01Packaging MEMS
    • B81C2203/0118Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

The invention relates to the formation of vertical electrical through contacts in a support substrate, on the surface of which component structures are fixed, whereby the component structures are associated with contact surfaces, arranged over the through contacts. The component structures and the contact surfaces are arranged in cavities, formed by the direct wafer bonding of the carrier substrate with a cover sheet comprising a corresponding recess.
PCT/EP2004/006500 2003-07-10 2004-06-16 Electronic component and method for production thereof WO2005006432A3 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE10331322.2 2003-07-10
DE2003131322 DE10331322A1 (en) 2003-07-10 2003-07-10 Electronic device and method for producing

Publications (2)

Publication Number Publication Date
WO2005006432A2 true WO2005006432A2 (en) 2005-01-20
WO2005006432A3 true true WO2005006432A3 (en) 2005-04-28

Family

ID=33560034

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2004/006500 WO2005006432A3 (en) 2003-07-10 2004-06-16 Electronic component and method for production thereof

Country Status (2)

Country Link
DE (1) DE10331322A1 (en)
WO (1) WO2005006432A3 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7807550B2 (en) * 2005-06-17 2010-10-05 Dalsa Semiconductor Inc. Method of making MEMS wafers
JP4889974B2 (en) * 2005-08-01 2012-03-07 新光電気工業株式会社 Electronic component mounting structure and a manufacturing method thereof
US7393758B2 (en) * 2005-11-03 2008-07-01 Maxim Integrated Products, Inc. Wafer level packaging process
EP2121509A2 (en) 2006-12-21 2009-11-25 Continental Teves AG & Co. oHG Encapsulation module method for production and use thereof
KR100878410B1 (en) 2007-07-11 2009-01-13 삼성전기주식회사 A crystal device fabrication method
JP4481323B2 (en) 2007-07-20 2010-06-16 日立オートモティブシステムズ株式会社 Physical quantity sensor and a manufacturing method thereof
US9177893B2 (en) 2011-05-17 2015-11-03 Infineon Technologies Ag Semiconductor component with a front side and a back side metallization layer and manufacturing method thereof
US9444428B2 (en) * 2014-08-28 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Film bulk acoustic resonators comprising backside vias

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326702A (en) * 1992-05-14 1993-12-10 Seiko Epson Corp Manufacture of silicon-glass junction member
US5424245A (en) * 1994-01-04 1995-06-13 Motorola, Inc. Method of forming vias through two-sided substrate
EP0851492A2 (en) * 1996-12-06 1998-07-01 Texas Instruments Incorporated Surface-mounted substrate structure and method
WO2000041299A1 (en) * 1998-12-30 2000-07-13 Thomson-Csf Device with acoustic waves guided in a fine piezoelectric material film bonded with a molecular bonding on a bearing substrate and method for making same
EP1071126A2 (en) * 1999-07-23 2001-01-24 Agilent Technologies Inc Microcap wafer-level package with vias
US6225145B1 (en) * 1998-09-07 2001-05-01 Electronics And Telecommunications Research Institute Method of fabricating vacuum micro-structure
US6242842B1 (en) * 1996-12-16 2001-06-05 Siemens Matsushita Components Gmbh & Co. Kg Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production
US20020093398A1 (en) * 2001-01-16 2002-07-18 Juha Ella Bulk acoustic wave resonator with a conductive mirror
WO2002058233A1 (en) * 2001-01-18 2002-07-25 Infineon Technologies Ag Filter devices and method for fabricating filter devices
US20020113321A1 (en) * 2001-02-22 2002-08-22 Oleg Siniaguine Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05326702A (en) * 1992-05-14 1993-12-10 Seiko Epson Corp Manufacture of silicon-glass junction member
US5424245A (en) * 1994-01-04 1995-06-13 Motorola, Inc. Method of forming vias through two-sided substrate
EP0851492A2 (en) * 1996-12-06 1998-07-01 Texas Instruments Incorporated Surface-mounted substrate structure and method
US6242842B1 (en) * 1996-12-16 2001-06-05 Siemens Matsushita Components Gmbh & Co. Kg Electrical component, in particular saw component operating with surface acoustic waves, and a method for its production
US6225145B1 (en) * 1998-09-07 2001-05-01 Electronics And Telecommunications Research Institute Method of fabricating vacuum micro-structure
WO2000041299A1 (en) * 1998-12-30 2000-07-13 Thomson-Csf Device with acoustic waves guided in a fine piezoelectric material film bonded with a molecular bonding on a bearing substrate and method for making same
EP1071126A2 (en) * 1999-07-23 2001-01-24 Agilent Technologies Inc Microcap wafer-level package with vias
US20020093398A1 (en) * 2001-01-16 2002-07-18 Juha Ella Bulk acoustic wave resonator with a conductive mirror
WO2002058233A1 (en) * 2001-01-18 2002-07-25 Infineon Technologies Ag Filter devices and method for fabricating filter devices
US20020113321A1 (en) * 2001-02-22 2002-08-22 Oleg Siniaguine Devices having substrates with opening passing through the substrates and conductors in the openings, and methods of manufacture

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 018, no. 141 (E - 1520) 9 March 1994 (1994-03-09) *

Also Published As

Publication number Publication date Type
WO2005006432A2 (en) 2005-01-20 application
DE10331322A1 (en) 2005-02-03 application

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