WO2005004252A2 - Verfahren zur herstellung von organischen solarzellen oder photodetektoren - Google Patents
Verfahren zur herstellung von organischen solarzellen oder photodetektoren Download PDFInfo
- Publication number
- WO2005004252A2 WO2005004252A2 PCT/EP2004/007122 EP2004007122W WO2005004252A2 WO 2005004252 A2 WO2005004252 A2 WO 2005004252A2 EP 2004007122 W EP2004007122 W EP 2004007122W WO 2005004252 A2 WO2005004252 A2 WO 2005004252A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- organic
- layer
- semiconductor
- semi
- production
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 239000007787 solid Substances 0.000 claims abstract description 4
- 229920000620 organic polymer Polymers 0.000 claims abstract 2
- 238000007639 printing Methods 0.000 claims description 3
- 229920000547 conjugated polymer Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 abstract 4
- 239000012044 organic layer Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 229920000144 PEDOT:PSS Polymers 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000009472 formulation Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000010345 tape casting Methods 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/114—Poly-phenylenevinylene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to the production of organic solar cells, which are constructed in particular on a polymer basis.
- the typical cell structure of a solar cell consists of a layer structure that contains a positive electrode, an organic semiconductor mixture and a negative electrode.
- ITO / PEDOT: PSS can be used as the material for the positive electrode.
- the semiconductor mixture consists of an organic material, for example a polymer.
- the semiconductor mixture contains both n-type semiconductor molecules and p-type semi-conductor molecules.
- This semiconductor mixed layer is referred to as a bulk heterojunction layer.
- Materials that are also used relate, for example, to the negative electrode, which can consist of Ca / Ag or LiF / Al. However, the substances listed above do not exclusively represent the corresponding elements, but other material combinations are also possible.
- the donor present in the bulk mixed layer can be, for example, a conjugated polymer and the acceptor can be, for example, a soluble methanofullerene.
- a major difficulty in the production of bulk heterojunction solar cells is the formation of a desired phase morphology with respect to the n-type semiconductor and the p-type semiconductor. This problem comes among other things due to the different solubility of the individual components in the common solvent.
- the object of the invention is to specify a production method for an organic solar cell, by means of which a bulk heterojunction mixed layer can be formed.
- the invention is based on the finding that a bulk heterojunction mixed layer is possible by the serial application of solutions with only one organic semiconductor in each case.
- the focus is on the phase morphology of the n and p semiconductors.
- the phase formation must be precisely controlled during the deposition or solidification times.
- An essential contribution of the invention consists in the technologically simpler production of a bulk heterojunction cell. Although two layers to be applied in series are provided, overall there is greater freedom in the choice of solvent, combined with significant advantages for the entire production. If the layer of the heterojunction is represented as a bulk, there is an overall mixture of the n-semiconductors and the p-semiconductors.
- the figure shows the comparison of characteristic curves of solar cells which are manufactured on the one hand according to the prior art and on the other hand according to the invention.
- characteristic curves shown in the figure relate, on the one hand, shown with filled circles, to a solar cell produced with normal spin coating, both n-semiconductors and p-semiconductors being solved in one solution.
- Characteristic curves depicted with solid squares relate to a solar cell that is produced by successively applying layers, wherein during the production of each layer in the solution used either only n-
- Semiconductors are present or corresponding p-semiconductors.
- the characteristic curve according to the prior art and according to the invention do not differ significantly, both when recording a dark characteristic and when recording a characteristic under lighting.
- the main advantages of the invention are the great freedom in solvent formulation.
- An organic solar cell with a bulk heterojunction mixed layer can be represented as follows, for example:
- An organic semiconductor is first applied to a carrier substrate, for example glass, ITO / PEDOT: PSS. This is done, for example, by spin coating, knife coating or printing.
- the choice of the first solvent can be matched particularly advantageously to the solubility of the first semiconductor.
- P3HT, PPV is used as the first semiconductor.
- the formulation of the second solution is also optimized with regard to the solubility of the second semiconductor.
- a fullerene is used as the second semiconductor.
- the first semiconductor or the first semiconductor layer must have a slight solubility in the solvent for processing the second semiconductor layer.
- the second solution is applied to the first layer, which is also achieved with an additive application method such as knife coating or printing, the first semiconductor is slightly dissolved and mixes with the second semiconductor. After the solvent evaporated, a bulk heterojunction mixed layer was formed when the very thin layers were mixed. In this way, an optimal phase morphology can be achieved for every semiconductor, but at the same time extensive mixing can be achieved.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006516086A JP4936886B2 (ja) | 2003-07-01 | 2004-06-30 | 有機太陽電池又は光検出器の製造方法。 |
US10/561,582 US7407831B2 (en) | 2003-07-01 | 2004-06-30 | Method for producing organic solar cells or photo detectors |
EP04740497A EP1642348A2 (de) | 2003-07-01 | 2004-06-30 | Verfahren zur herstellung von organischen solarzellen oder photodetektoren |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10329654 | 2003-07-01 | ||
DE10329654.9 | 2003-07-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2005004252A2 true WO2005004252A2 (de) | 2005-01-13 |
WO2005004252A3 WO2005004252A3 (de) | 2006-01-26 |
Family
ID=33559781
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2004/007122 WO2005004252A2 (de) | 2003-07-01 | 2004-06-30 | Verfahren zur herstellung von organischen solarzellen oder photodetektoren |
Country Status (4)
Country | Link |
---|---|
US (1) | US7407831B2 (de) |
EP (1) | EP1642348A2 (de) |
JP (1) | JP4936886B2 (de) |
WO (1) | WO2005004252A2 (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2425654A (en) * | 2005-04-29 | 2006-11-01 | Seiko Epson Corp | Fabrication of a heterojunction of organic semiconductor polymers |
DE102006035293A1 (de) * | 2006-07-26 | 2008-01-31 | Leonhard Kurz Gmbh & Co. Kg | Verfahren zur Herstellung eines organischen elektrischen Bauelements sowie ein derartiges Bauelement |
DE102006046210A1 (de) * | 2006-09-29 | 2008-04-03 | Siemens Ag | Organische Photodiode und Verfahren zu deren Herstellung |
EP2360751A1 (de) * | 2006-08-07 | 2011-08-24 | Wake Forest University | Organischer Verbundwerkstoff |
US10673002B2 (en) | 2016-04-20 | 2020-06-02 | Hamamatsu Photonics K.K. | Organic photoelectric conversion element and method for producing same |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8012530B2 (en) * | 2005-09-06 | 2011-09-06 | Kyoto University | Organic thin-film photoelectric conversion element and method of manufacturing the same |
US8319092B1 (en) | 2006-11-03 | 2012-11-27 | Solera Laboratories, Inc. | Nano power cell and method of use |
US9112447B2 (en) * | 2006-11-03 | 2015-08-18 | Solera Laboratories, Inc. | Nano power cell and method of use |
JP5493496B2 (ja) * | 2009-06-24 | 2014-05-14 | コニカミノルタ株式会社 | 有機光電変換素子、太陽電池及び光センサアレイ |
WO2012098876A1 (ja) * | 2011-01-21 | 2012-07-26 | 株式会社クラレ | 光電変換素子とその製造方法、及び太陽電池 |
KR101355992B1 (ko) | 2011-11-29 | 2014-01-29 | 한국과학기술원 | 유기태양전지 및 그의 제조방법 |
DE102012002354A1 (de) | 2012-02-08 | 2013-08-08 | Rent A Scientist Gmbh | Feinstrukturierter p-/n-Heteroübergang |
JP7048250B2 (ja) * | 2017-10-19 | 2022-04-05 | 住友化学株式会社 | 有機電子デバイスの製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001084645A1 (de) * | 2000-04-27 | 2001-11-08 | Qsel - Quantum Solar Energy Linz Forschungs- Und Entwicklungs- Gesellschaft M.B.H. | Photovoltaische zelle |
JP2004165474A (ja) * | 2002-11-14 | 2004-06-10 | Matsushita Electric Ind Co Ltd | 光電変換素子及びその製造方法 |
Family Cites Families (11)
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US5331183A (en) * | 1992-08-17 | 1994-07-19 | The Regents Of The University Of California | Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
GB9423692D0 (en) * | 1994-11-23 | 1995-01-11 | Philips Electronics Uk Ltd | A photoresponsive device |
US5703394A (en) * | 1996-06-10 | 1997-12-30 | Motorola | Integrated electro-optical package |
US5986206A (en) * | 1997-12-10 | 1999-11-16 | Nanogram Corporation | Solar cell |
GB9806066D0 (en) * | 1998-03-20 | 1998-05-20 | Cambridge Display Tech Ltd | Multilayer photovoltaic or photoconductive devices |
CN100379048C (zh) | 1999-12-21 | 2008-04-02 | 造型逻辑有限公司 | 形成互连 |
GB0002958D0 (en) | 2000-02-09 | 2000-03-29 | Cambridge Display Tech Ltd | Optoelectronic devices |
AT410729B (de) | 2000-04-27 | 2003-07-25 | Qsel Quantum Solar Energy Linz | Photovoltaische zelle mit einer photoaktiven schicht aus zwei molekularen organischen komponenten |
AT411305B (de) | 2002-05-22 | 2003-11-25 | Qsel Quantum Solar Energy Linz | Verfahren zur nachbehandlung einer photovoltaischen zelle |
AT409902B (de) | 2001-08-07 | 2002-12-27 | Qsel Quantum Solar Energy Linz | Lichtdurchlässiger flachkörper |
AT410859B (de) | 2000-04-27 | 2003-08-25 | Qsel Quantum Solar Energy Linz | Verfahren zum herstellen einer photovoltaischen zelle mit einer photoaktiven schicht aus zwei organischen komponenten |
-
2004
- 2004-06-30 WO PCT/EP2004/007122 patent/WO2005004252A2/de active Application Filing
- 2004-06-30 JP JP2006516086A patent/JP4936886B2/ja not_active Expired - Fee Related
- 2004-06-30 EP EP04740497A patent/EP1642348A2/de not_active Withdrawn
- 2004-06-30 US US10/561,582 patent/US7407831B2/en not_active Expired - Fee Related
Patent Citations (2)
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WO2001084645A1 (de) * | 2000-04-27 | 2001-11-08 | Qsel - Quantum Solar Energy Linz Forschungs- Und Entwicklungs- Gesellschaft M.B.H. | Photovoltaische zelle |
JP2004165474A (ja) * | 2002-11-14 | 2004-06-10 | Matsushita Electric Ind Co Ltd | 光電変換素子及びその製造方法 |
Non-Patent Citations (5)
Title |
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BRABEC C J ET AL: "The influence of materials work function on the open circuit voltage of plastic solar cells" THIN SOLID FILMS, ELSEVIER SEQUOIA, NL, Bd. 403-404, 1. Februar 2002 (2002-02-01), Seiten 368-372, XP004430386 ISSN: 0040-6090 in der Anmeldung erwähnt * |
LOOS J ET AL: "The use of the focused ion beam technique to prepare cross-sectional transmission electron microscopy specimen of polymer solar cells deposited on glass" POLYMER, ELSEVIER SCIENCE PUBLISHERS B.V, GB, Bd. 43, Nr. 26, Dezember 2002 (2002-12), Seiten 7493-7496, XP004393266 ISSN: 0032-3861 * |
MANCA J V ET AL: "STATE-OF-THE-ART MIDMO-PPV:PCBM BULK HETERO-JUNCTION ORGANIC SOLAR CELLS: MATERIALS, NANO-MORPHOLOGY AND ELECTRO-OPTICAL PROPERTIES" PROCEEDINGS OF THE SPIE "ORGANIC PHOTOVOLTAICS III", SPIE, BELLINGHAM, VA, US, Bd. 4801, 11. Juli 2002 (2002-07-11), Seiten 15-20, XP001191198 ISSN: 0277-786X * |
PATENT ABSTRACTS OF JAPAN Bd. 2003, Nr. 12, 5. Dezember 2003 (2003-12-05) -& JP 2004 165474 A (MATSUSHITA ELECTRIC IND CO LTD; FUJITA KATSUHIKO), 10. Juni 2004 (2004-06-10) * |
SHAHEEN SEAN E ET AL: "2.5% efficient organic plastic solar cells" APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, Bd. 78, Nr. 6, 5. Februar 2001 (2001-02-05), Seiten 841-843, XP012028582 ISSN: 0003-6951 in der Anmeldung erwähnt * |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2425654A (en) * | 2005-04-29 | 2006-11-01 | Seiko Epson Corp | Fabrication of a heterojunction of organic semiconductor polymers |
US7468287B2 (en) | 2005-04-29 | 2008-12-23 | Seiko Epson Corporation | Method of fabricating a heterojunction of organic semiconducting polymers |
GB2425654B (en) * | 2005-04-29 | 2010-03-17 | Seiko Epson Corp | A method of fabricating a heterojunction of organic semiconducting polymers |
DE102006035293A1 (de) * | 2006-07-26 | 2008-01-31 | Leonhard Kurz Gmbh & Co. Kg | Verfahren zur Herstellung eines organischen elektrischen Bauelements sowie ein derartiges Bauelement |
DE102006035293B4 (de) * | 2006-07-26 | 2012-03-01 | Leonhard Kurz Gmbh & Co. Kg | Verfahren zur Herstellung eines organischen elektrischen Bauelements |
EP2360751A1 (de) * | 2006-08-07 | 2011-08-24 | Wake Forest University | Organischer Verbundwerkstoff |
DE102006046210A1 (de) * | 2006-09-29 | 2008-04-03 | Siemens Ag | Organische Photodiode und Verfahren zu deren Herstellung |
DE102006046210B4 (de) * | 2006-09-29 | 2013-03-28 | Siemens Aktiengesellschaft | Verfahren zur Herstellung eines organischen Photodetektors |
US10673002B2 (en) | 2016-04-20 | 2020-06-02 | Hamamatsu Photonics K.K. | Organic photoelectric conversion element and method for producing same |
Also Published As
Publication number | Publication date |
---|---|
US7407831B2 (en) | 2008-08-05 |
JP4936886B2 (ja) | 2012-05-23 |
WO2005004252A3 (de) | 2006-01-26 |
EP1642348A2 (de) | 2006-04-05 |
US20070092988A1 (en) | 2007-04-26 |
JP2009514184A (ja) | 2009-04-02 |
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