WO2004109813A3 - Lumineszenzdiode - Google Patents

Lumineszenzdiode Download PDF

Info

Publication number
WO2004109813A3
WO2004109813A3 PCT/DE2004/000829 DE2004000829W WO2004109813A3 WO 2004109813 A3 WO2004109813 A3 WO 2004109813A3 DE 2004000829 W DE2004000829 W DE 2004000829W WO 2004109813 A3 WO2004109813 A3 WO 2004109813A3
Authority
WO
WIPO (PCT)
Prior art keywords
light
emitting diode
support
lens body
casting compound
Prior art date
Application number
PCT/DE2004/000829
Other languages
English (en)
French (fr)
Other versions
WO2004109813A2 (de
Inventor
Georg Bogner
Bert Braune
Josef Schmid
Original Assignee
Osram Opto Semiconductors Gmbh
Georg Bogner
Bert Braune
Josef Schmid
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10329081A external-priority patent/DE10329081A1/de
Application filed by Osram Opto Semiconductors Gmbh, Georg Bogner, Bert Braune, Josef Schmid filed Critical Osram Opto Semiconductors Gmbh
Priority to EP04728512.7A priority Critical patent/EP1629537B1/de
Publication of WO2004109813A2 publication Critical patent/WO2004109813A2/de
Publication of WO2004109813A3 publication Critical patent/WO2004109813A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

Eine Lumineszenzdiode enthält einen in eine Vergußmasse (3) eingebetteten, auf einem Trägerkörper (1) befestigten strahlungsemittierenden Halbleiterchip (4), und einen Linsenkörper (2), wobei der Trägerkörper (1) Silizium oder eine Keramik und der Linsenkörper (2) ein Glas enthält. Die Vergußmasse (3) ist vorzugsweise von dem Trägerkörper (1) und dem Linsenkörper (2) umschlossen und enthält vorteilhaft keine Polymere, die empfindlich gegen ultravioletten Strahlung sind.
PCT/DE2004/000829 2003-05-30 2004-04-21 Lumineszenzdiode WO2004109813A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP04728512.7A EP1629537B1 (de) 2003-05-30 2004-04-21 Lumineszenzdiode

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10324608 2003-05-30
DE10324608.8 2003-05-30
DE10329081A DE10329081A1 (de) 2003-05-30 2003-06-27 Lumineszenzdiode
DE10329081.8 2003-06-27

Publications (2)

Publication Number Publication Date
WO2004109813A2 WO2004109813A2 (de) 2004-12-16
WO2004109813A3 true WO2004109813A3 (de) 2005-04-21

Family

ID=33512379

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2004/000829 WO2004109813A2 (de) 2003-05-30 2004-04-21 Lumineszenzdiode

Country Status (3)

Country Link
EP (1) EP1629537B1 (de)
TW (1) TWI240433B (de)
WO (1) WO2004109813A2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005020908A1 (de) * 2005-02-28 2006-08-31 Osram Opto Semiconductors Gmbh Beleuchtungsvorrichtung
DE102005038698A1 (de) 2005-07-08 2007-01-18 Tridonic Optoelectronics Gmbh Optoelektronische Bauelemente mit Haftvermittler
WO2007063489A1 (en) * 2005-12-02 2007-06-07 Koninklijke Philips Electronics N.V. Light emitting diode module
US7804147B2 (en) * 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement
US7769066B2 (en) 2006-11-15 2010-08-03 Cree, Inc. Laser diode and method for fabricating same
US7834367B2 (en) 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
CN101894897A (zh) * 2010-06-13 2010-11-24 东南大学 发光二极管的高性能玻璃封装方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225673A (ja) * 1982-06-23 1983-12-27 Nec Corp 半導体装置
EP0230336A1 (de) * 1986-01-24 1987-07-29 Philips Composants Optoelektronische Vorrichtung zum oberflächigen Einbau
JPH10233532A (ja) * 1997-02-21 1998-09-02 Houshin Kagaku Sangiyoushiyo:Kk 発光ダイオード
EP0933823A2 (de) * 1998-01-30 1999-08-04 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Ausdehnungskompensiertes optoelektronisches Halbleiter-Bauelement, insbesondere UV-emittierende Leuchtdiode und Verfahren zu seiner Herstellung
WO2002091489A2 (en) * 2001-05-04 2002-11-14 Gelcore Llc Surface mount light emitting device package and fabrication method
DE10137641A1 (de) * 2001-08-03 2003-02-20 Osram Opto Semiconductors Gmbh Hybrid-LED
US20030067264A1 (en) * 2001-10-09 2003-04-10 Agilent Technologies, Inc. Light-emitting diode and method for its production
WO2004023522A2 (en) * 2002-09-04 2004-03-18 Cree, Inc. Power surface mount light emitting die package

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3117571A1 (de) * 1981-05-04 1982-11-18 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Lumineszenz-halbleiterbauelement

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225673A (ja) * 1982-06-23 1983-12-27 Nec Corp 半導体装置
EP0230336A1 (de) * 1986-01-24 1987-07-29 Philips Composants Optoelektronische Vorrichtung zum oberflächigen Einbau
JPH10233532A (ja) * 1997-02-21 1998-09-02 Houshin Kagaku Sangiyoushiyo:Kk 発光ダイオード
EP0933823A2 (de) * 1998-01-30 1999-08-04 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Ausdehnungskompensiertes optoelektronisches Halbleiter-Bauelement, insbesondere UV-emittierende Leuchtdiode und Verfahren zu seiner Herstellung
WO2002091489A2 (en) * 2001-05-04 2002-11-14 Gelcore Llc Surface mount light emitting device package and fabrication method
DE10137641A1 (de) * 2001-08-03 2003-02-20 Osram Opto Semiconductors Gmbh Hybrid-LED
US20030067264A1 (en) * 2001-10-09 2003-04-10 Agilent Technologies, Inc. Light-emitting diode and method for its production
WO2004023522A2 (en) * 2002-09-04 2004-03-18 Cree, Inc. Power surface mount light emitting die package

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 008, no. 078 (E - 237) 10 April 1984 (1984-04-10) *
PATENT ABSTRACTS OF JAPAN vol. 1998, no. 14 31 December 1998 (1998-12-31) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9012937B2 (en) 2007-10-10 2015-04-21 Cree, Inc. Multiple conversion material light emitting diode package and method of fabricating same

Also Published As

Publication number Publication date
EP1629537A2 (de) 2006-03-01
WO2004109813A2 (de) 2004-12-16
TWI240433B (en) 2005-09-21
TW200427113A (en) 2004-12-01
EP1629537B1 (de) 2014-07-30

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