WO2004107396A2 - Double-sided photovoltaic cells - Google Patents

Double-sided photovoltaic cells Download PDF

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Publication number
WO2004107396A2
WO2004107396A2 PCT/MA2004/000003 MA2004000003W WO2004107396A2 WO 2004107396 A2 WO2004107396 A2 WO 2004107396A2 MA 2004000003 W MA2004000003 W MA 2004000003W WO 2004107396 A2 WO2004107396 A2 WO 2004107396A2
Authority
WO
WIPO (PCT)
Prior art keywords
double
photovoltaic cells
sided photovoltaic
cells
faces
Prior art date
Application number
PCT/MA2004/000003
Other languages
French (fr)
Other versions
WO2004107396A3 (en
Inventor
Millan Francisco Paton
Original Assignee
Millan Francisco Paton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Millan Francisco Paton filed Critical Millan Francisco Paton
Publication of WO2004107396A2 publication Critical patent/WO2004107396A2/en
Publication of WO2004107396A3 publication Critical patent/WO2004107396A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the solar panels are exposed, on one side, to the rays of the sun.
  • the rear face of the photovoltaic cells not exposed to sunlight, therefore does not produce photovoltaic energy.
  • This invention consists in doubling, on the same cell, the surface for receiving the sunshine, by the use of the front and back sides of said cell.
  • the axis of symmetry will be the "Metal" layer (M) on which will be added, on either side, in appropriate symmetrical layers, alternatively, silicon (S), then the insulator (I) and again silicon (S), or any other type of sensor existing or to be discovered.
  • the machining process will consist in placing, before encapsulation, the successive symmetrical layers which will allow the simultaneous use of the two faces for exposure to the sun of the same photo-voltaic cell.
  • the panel of photovoltaic cells Double Face will be presented as described in Figure 3, namely: the panel of Double Face cells (TF) protected by an insulator (I) of the glass (or any other material) (V) of protection to the encapsulation, connected to the rigid frame (C) enclosing the panel by a seal (E).

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention relating to double-sided photovoltaic cells consists of using the two sides of the photovoltaic cell, front and back, for producing electrical power from solar energy.

Description

CELLULES PHOTOVOLTAIQUES DOUBLE FACEDOUBLE SIDED PHOTOVOLTAIC CELLS
INTRODUCTIONINTRODUCTION
L'état de l'art en matière de cellules photovoltaïques est, à ce jour, monoface.The state of the art in photovoltaic cells is, to date, single-sided.
En effet, les panneaux solaires sont exposés, sur une seule face, aux rayons du soleil.Indeed, the solar panels are exposed, on one side, to the rays of the sun.
La face arrière des cellules photovoltaïques, non exposée à l'ensoleillement, ne produit donc pas d'énergie photovoltaïque. The rear face of the photovoltaic cells, not exposed to sunlight, therefore does not produce photovoltaic energy.
CELLULES PHOTOVOLTAÏQUES DOUBLE FACEDOUBLE-SIDED PHOTOVOLTAIC CELLS
Description techniqueTechnical description
Cette invention consiste à doubler, sur une même cellule, la surface de réception de l'ensolleillement, par l'usage des faces recto et verso de ladite cellule.This invention consists in doubling, on the same cell, the surface for receiving the sunshine, by the use of the front and back sides of said cell.
A cet effet, nous avons procédé au jumelage des deux faces (twin face) par rapport à l'axe du plan de symétrie horizontal de cellules point contact.To this end, we proceeded to twin the two faces (twin face) with respect to the axis of the horizontal plane of symmetry of contact point cells.
Ainsi, dans le cas des Figures 1 et Ibis d'une cellule point contact, l'axe de symétrie sera la couche "Métal" (M) sur laquelle viendront s'ajouter, de part et d'autre, en couches appropriées symétriques, alternativement, le silicium (S), puis l'isolant (I) et encore le silicium (S), ou tout autre type de capteur existant ou à découvrir.Thus, in the case of Figures 1 and Ibis of a contact point cell, the axis of symmetry will be the "Metal" layer (M) on which will be added, on either side, in appropriate symmetrical layers, alternatively, silicon (S), then the insulator (I) and again silicon (S), or any other type of sensor existing or to be discovered.
De même, dans le cas de la Figure 2 d'une cellule point contact avec 3 couches métalliques, sur l'axe de symétrie formé par la couche de métal "b" (M"b") viendront s'ajouter , de part et d'autre, en couches appropriées symétriques, alternativement, l' isolant (I), le métal "a" (M "a"), et le sihcium (S).Similarly, in the case of Figure 2 of a contact point cell with 3 metal layers, on the axis of symmetry formed by the metal layer "b" (M "b") will be added, on both sides and on the other, in appropriate symmetrical layers, alternatively, the insulator (I), the metal "a" (M "a"), and the sihcium (S).
Pour ce qui est de la Figure 2bis d'une cellule point contact avec 3 couches métalliques différenciées, des études ultérieures détermineront des opportunités et avantages à différencier la couche métallique la moins exposée aux radiations solaires (M "c") afin d' accroître la productivité de la celluleWith regard to Figure 2bis of a contact point cell with 3 differentiated metal layers, further studies will determine the opportunities and advantages of differentiating the metal layer least exposed to solar radiation (M "c") in order to increase the cell productivity
Le procédé d'usinage consistera à disposer, avant l'encapsulage, les couches successives symétriques qui permettront simultanément l'utilisation des deux faces pour exposition à l'ensoleillement d'une même cellule photo voltaique.The machining process will consist in placing, before encapsulation, the successive symmetrical layers which will allow the simultaneous use of the two faces for exposure to the sun of the same photo-voltaic cell.
Le panneau de cellules photovoltaïques Double Face se présentera tel que décrit dans la Figure 3, à savoir : le panneau de cellules Double Face (TF) protégé par un isolant (I) du verre (ou toute autre matière) (V) de protection à l'encapsulage, relié au cadre rigide (C) renfermant le panneau par un joint d'étanchéité (E). The panel of photovoltaic cells Double Face will be presented as described in Figure 3, namely: the panel of Double Face cells (TF) protected by an insulator (I) of the glass (or any other material) (V) of protection to the encapsulation, connected to the rigid frame (C) enclosing the panel by a seal (E).

Claims

CELLULES PHOTOVOLTAÏQUES DOUBLE FACEDOUBLE-SIDED PHOTOVOLTAIC CELLS
Reven dicationsClaims
L'i vention CELLULES PHOTOVOLTAÏQUES DOUBLE FACE est caractérisée par :The double sided photovoltaic cells invention is characterized by:
1/ la duphcation des faces réceptives d'ensoleillement d'une même cellule photovoltaïque pour la production d'énergie solaire, soit,1 / the duphcation of the receptive faces of sunshine of the same photovoltaic cell for the production of solar energy, ie,
2/ par l'adossement par leurs faces arrières de deux cellules identiques, ou différentes, avant l'opération d'encapsulage, ou,2 / by the backing by their rear faces of two identical or different cells, before the encapsulation operation, or,
3/ par la duplication des faces réceptives d'ensoleillement de cellules de types Point Contact simples, ou,3 / by the duplication of the receptive faces of sunshine of simple Point Contact type cells, or,
4/ à couches métalliques double symétriques,4 / with symmetrical double metal layers,
5/ à couches métalliques triple assyrnétriques,5 / with triple asymmetric metallic layers,
6/ à couches métalliques différenciées,6 / with differentiated metallic layers,
Il à couches métalliques multiples. It has multiple metallic layers.
PCT/MA2004/000003 2003-05-28 2004-05-24 Double-sided photovoltaic cells WO2004107396A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MA27184 2003-05-28
MA27184A MA26063A1 (en) 2003-05-28 2003-05-28 DOUBLE-SIDED PHOTOVOLTAIC CELLS

Publications (2)

Publication Number Publication Date
WO2004107396A2 true WO2004107396A2 (en) 2004-12-09
WO2004107396A3 WO2004107396A3 (en) 2005-02-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/MA2004/000003 WO2004107396A2 (en) 2003-05-28 2004-05-24 Double-sided photovoltaic cells

Country Status (2)

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MA (1) MA26063A1 (en)
WO (1) WO2004107396A2 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2342559A1 (en) * 1976-02-27 1977-09-23 Radiotechnique Compelec Back to back solar transducer and reflector - has central silicon substrate and dissected surface layers
FR2342558A1 (en) * 1976-02-27 1977-09-23 Radiotechnique Compelec Solar photovoltaic cell with back to back transducers - has transducers occupying half surface area of reflector
US5022929A (en) * 1989-02-23 1991-06-11 Gallois Montbrun Roger Solar collector
US6218606B1 (en) * 1998-09-24 2001-04-17 Sanyo Electric Co., Ltd. Solar cell module for preventing reverse voltage to solar cells
WO2001088312A1 (en) * 2000-05-17 2001-11-22 Jacques Lambey Multidirectional frame provided with a heat sensor or a photovoltaic sensor
JP2004053149A (en) * 2002-07-22 2004-02-19 Sanyo Electric Co Ltd Air conditioner

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2342559A1 (en) * 1976-02-27 1977-09-23 Radiotechnique Compelec Back to back solar transducer and reflector - has central silicon substrate and dissected surface layers
FR2342558A1 (en) * 1976-02-27 1977-09-23 Radiotechnique Compelec Solar photovoltaic cell with back to back transducers - has transducers occupying half surface area of reflector
US5022929A (en) * 1989-02-23 1991-06-11 Gallois Montbrun Roger Solar collector
US6218606B1 (en) * 1998-09-24 2001-04-17 Sanyo Electric Co., Ltd. Solar cell module for preventing reverse voltage to solar cells
WO2001088312A1 (en) * 2000-05-17 2001-11-22 Jacques Lambey Multidirectional frame provided with a heat sensor or a photovoltaic sensor
JP2004053149A (en) * 2002-07-22 2004-02-19 Sanyo Electric Co Ltd Air conditioner

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Publication number Publication date
WO2004107396A3 (en) 2005-02-17
MA26063A1 (en) 2004-04-01

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