CN104993001A - Selective filtering membrane, preparation method and solar cell module - Google Patents
Selective filtering membrane, preparation method and solar cell module Download PDFInfo
- Publication number
- CN104993001A CN104993001A CN201510378792.0A CN201510378792A CN104993001A CN 104993001 A CN104993001 A CN 104993001A CN 201510378792 A CN201510378792 A CN 201510378792A CN 104993001 A CN104993001 A CN 104993001A
- Authority
- CN
- China
- Prior art keywords
- filter coating
- silicon layer
- selectivity filter
- preparation
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 238000001914 filtration Methods 0.000 title abstract 4
- 239000012528 membrane Substances 0.000 title abstract 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 43
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000000429 assembly Methods 0.000 claims abstract description 4
- 230000000712 assembly Effects 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims description 53
- 238000000576 coating method Methods 0.000 claims description 53
- 239000010408 film Substances 0.000 claims description 33
- 239000010409 thin film Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 9
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical group O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 238000005538 encapsulation Methods 0.000 claims description 6
- 239000003595 mist Substances 0.000 claims description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 4
- 239000001569 carbon dioxide Substances 0.000 claims description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/055—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means where light is absorbed and re-emitted at a different wavelength by the optical element directly associated or integrated with the PV cell, e.g. by using luminescent material, fluorescent concentrators or up-conversion arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method of a selective filtering membrane. The preparation method comprises the following steps: a), forming an amorphous silicon layer on a transparent substrate; b), forming a silicon oxide film on the amorphous silicon layer; and c), forming an amorphous silicon layer on the silicon oxide film, wherein the step b) and the step c) are at least alternately executed twice. The invention further correspondingly provides a selective filtering membrane, and a crystalline silicon solar cell module and a film solar cell module which employ the selective filtering membrane. According to the invention, solar cells, connecting lines, backboards and the like are all hidden at the back surfaces of the solar modules, the whole assemblies are integrated, and the beautifulness is greatly improved.
Description
Technical field
The invention belongs to solar cell preparation field, specifically, relate to a kind of selectivity filter coating, preparation method and solar module.
Background technology
In worldwide energy crisis, when regenerative resource is fewer and feweri and environmental pollution is more and more serious, the energy-conserving and environment-protective energy, more and more by the concern of people, New Energy Industry is able to fast development, the energy-conserving and environment-protective energy, more and more by the concern of people.Solar energy is most important basic power source in various regenerative resource, and as one of civilian clean energy resource, it receives the lower support energetically to local government of country.Therefore as solar energy generation technology solar radiant energy being converted to electric energy, namely photovoltaic industry develops rapidly especially.
The globality of solar module outward appearance is not in the market fine.For crystal silicon solar batteries assembly, from the appearance, not only can see navy blue cell piece, argenteous welding, can also see the backboard of white or black, overall sensation unsightly.Even if outward appearance is silicon-based film solar cells assembly relatively preferably, on whole solar cell, also can see the line of a lot of strip.Photovoltaic module visually lacks aesthetic feeling and will limit it in some application to the higher field of appearance requirement, such as BIPV (Building Integrated PV (Photovoltaic), BIPV).BIPV is one of photovoltaic solar technological innovation, and its principle adopts photovoltaic module to be directly used as roof boarding, to replace traditional color steel roofing structure.
Therefore be badly in need of a kind of method that can solve prior art defect, effectively can improve the aesthetic measure of existing photovoltaic module, do not reduce simultaneously or can improve the photoelectric conversion efficiency of photovoltaic cell.
Summary of the invention
In order to solve the problem of existing photovoltaic solar cell overall appearance aesthetic property difference, the invention provides a kind of preparation method of selectivity filter coating.
According to an aspect of the present invention, provide a kind of preparation method of selectivity filter coating, described preparation method comprises the steps:
A) amorphous silicon layer is formed on a transparent substrate;
B) on described amorphous silicon layer, silicon oxide film is formed;
C) on described silicon oxide film, amorphous silicon layer is formed;
At least alternately perform described step b) and described step c) twice.
According to a specific embodiment of the present invention, described amorphous silicon layer adopts the mist deposition of silane and hydrogen to be formed.
According to another embodiment of the present invention, the thickness range of described amorphous silicon layer is 1nm ~ 50nm.
According to another embodiment of the present invention, described silicon oxide film adopts the mist deposition of carbon dioxide, silane and hydrogen to be formed.
According to another embodiment of the present invention, the thickness range of described silicon oxide film is 20nm ~ 200nm.
According to another embodiment of the present invention, the depositing temperature of described amorphous silicon layer and/or described silicon oxide film is 100 DEG C ~ 500 DEG C.
According to another embodiment of the present invention, the pressure forming described amorphous silicon layer and/or described silicon oxide film is: 0.1mbar ~ 5mbar.
According to another embodiment of the present invention, the power density forming described amorphous silicon layer and/or described silicon oxide film is 0.1mW/cm
2~ 10mW/cm
2.
According to another aspect of the present invention, provide a kind of selectivity filter coating, described selectivity filter coating comprises successively: transparent substrates, amorphous silicon layer, silicon oxide film, amorphous silicon layer;
Described silicon oxide film and described amorphous silicon layer are alternately distributed, and at least alternately twice;
Described selectivity filter coating adopts the preparation method of any one selectivity filter coating provided by the invention to be prepared from.
According to a further aspect of the invention, provide a kind of crystal silicon solar batteries assembly, described crystal silicon solar assembly from top to bottom comprises successively: front glass sheet, selectivity filter coating, transparent encapsulation material, solar cell, encapsulating material and backboard;
Described selectivity filter coating adopts selectivity filter coating provided by the invention.
According to a further aspect of the invention, provide a kind of Thinfilm solar cell assembly, described Thinfilm solar cell assembly from top to bottom comprises successively: front glass sheet, selectivity filter coating, transparent substrates, solar cell, encapsulating material and backboard;
Described selectivity filter coating adopts selectivity filter coating provided by the invention.
According to a further aspect of the invention, provide a kind of Thinfilm solar cell assembly, described Thinfilm solar cell assembly from top to bottom comprises successively: front glass sheet, selectivity filter coating, transparent encapsulation material, solar cell and substrate;
Described selectivity filter coating adopts selectivity filter coating provided by the invention.
Selectivity filter coating provided by the invention through long-wave band sunlight, can absorb for solar cell and converts electric energy to, add the absorption of solar cell to sunlight, improve the photoelectric conversion efficiency of solar cell.Simultaneously, selectivity filter coating is applied among photovoltaic module, no matter be crystal silicon solar batteries assembly or Thinfilm solar cell assembly, all can realize the back side of solar cell, connecting line and backboard etc. all being hidden in solar module, whole solar module is made to present the silvery white or faint yellow of one, greatly improve the aesthetics of solar module, and effectively expand the application places of solar module.
Accompanying drawing explanation
By reading the detailed description done non-limiting example done with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Figure 1 shows that the schematic flow sheet of an embodiment of the preparation method according to a kind of selectivity filter coating provided by the invention;
Figure 2 shows that the structural representation of an embodiment according to a kind of selectivity filter coating provided by the invention;
Figure 3 shows that the structural representation of an embodiment according to a kind of crystal silicon solar batteries assembly provided by the invention;
Figure 4 shows that the structural representation of an embodiment according to a kind of Thinfilm solar cell assembly provided by the invention;
Figure 5 shows that the structural representation of an embodiment according to a kind of Thinfilm solar cell assembly provided by the invention;
Figure 6 shows that transmitance (T) and reflectivity (R) spectrogram of an embodiment of selectivity filter coating provided by the invention;
Figure 7 shows that the pictorial diagram of an embodiment of crystal silicon solar batteries assembly provided by the invention.
In accompanying drawing, same or analogous Reference numeral represents same or analogous parts.
Embodiment
Disclosing hereafter provides many different embodiments or example is used for realizing different structure of the present invention.Of the present invention open in order to simplify, hereinafter the parts of specific examples and setting are described.In addition, the present invention can in different example repeat reference numerals and/or letter.This repetition is to simplify and clearly object, itself does not indicate the relation between discussed various embodiment and/or setting.It should be noted that parts illustrated in the accompanying drawings are not necessarily drawn in proportion.Present invention omits the description of known assemblies and treatment technology and process to avoid unnecessarily limiting the present invention.
With reference to figure 1 and Fig. 2, the preparation method of selectivity filter coating provided by the invention comprises:
Step S101, transparent substrates 110 is formed amorphous silicon layer 120.Optionally, described transparent substrates 110 is glass.Wherein, described amorphous silicon layer 120 adopts silane (SiH
4) and hydrogen (H
2) mist deposition formed.In order to reach better effect, by regulating the ratio of silane gas and hydrogen, the refractive index of described amorphous silicon layer 120 is controlled about 3.5, such as: between 3.4 ~ 3.6.
Optionally, the various ways such as chemical vapour deposition (CVD), plasma activated chemical vapour deposition can be adopted to deposit and to form amorphous silicon layer 120.
Preferably, the thickness range of described amorphous silicon layer 120 is 1nm ~ 50nm, such as: 1nm, 25nm or 50nm.
After forming amorphous silicon layer 120, continue to perform step S102, on described amorphous silicon layer 120, form silicon oxide film 130.Wherein, described silicon oxide film 130 adopts carbon dioxide (CO
2), silane (SiH
4) and hydrogen (H
2) mist deposition formed.In order to reach better effect, the refractive index of silicon oxide film 130 controls about 1.5 ~ 2.5 by the ratio by regulation of carbon dioxide and silane gas, such as: 1.2,2 or 2.5.
Optionally, the various ways such as chemical vapour deposition (CVD), plasma activated chemical vapour deposition can be adopted to deposit and to form silicon oxide film 130.
Preferably, the thickness range of described silicon oxide film 130 is 20nm ~ 200nm, such as: 20nm, 120nm or 200nm.
Perform step S103 further, described silicon oxide film 130 forms amorphous silicon layer 120.The formation method of described amorphous silicon layer 120, Material selec-tion and thickness range are all described above, just repeat no more at this.
At least alternately perform described step S102 and described step S103 twice.
In order to saving resource, cost-saving, preferably, described amorphous silicon layer 120 and/or described silicon oxide film 130 complete in the same apparatus.Preferably, the depositing temperature forming described amorphous silicon layer 120 and/or described silicon oxide film 130 is 100 DEG C ~ 500 DEG C, such as: 100 DEG C, 300 DEG C or 500 DEG C.Preferably, the pressure forming described amorphous silicon layer 120 and/or described silicon oxide film 130 is: 0.1mbar ~ 5mbar, such as: 0.1mbar, 2.6mbar or 5mbar.Preferably, the power density forming described amorphous silicon layer 120 and/or described silicon oxide film 130 is 0.1mW/cm
2~ 10mW/cm
2, such as: 0.1mW/cm
2, 5.2mW/cm
2or 10mW/cm
2.
As shown in Figure 2, the specific embodiment of selectivity filter coating prepared by preparation method provided by the invention is.Described selectivity filter coating comprises successively: transparent substrates 110, amorphous silicon layer 120, silicon oxide film 130, amorphous silicon layer 120; Described silicon oxide film 120 and described amorphous silicon layer 130 are alternately distributed, and have replaced three times.Described silicon oxide film 120 and described amorphous silicon layer 130 are alternately distributed to be needed at least alternately just can reach good effect twice.
In addition, replace, the thickness of multilayer silicon oxide film 120 is preferably consistent at every turn; Equally, the thickness of Multi-layer amorphous silicon layer 130 is also preferably consistent.Thickness distribution is consistent, and each rete can be made more even.Outward appearance is better.
With reference to figure 3, Figure 3 shows that the structural representation of an embodiment according to a kind of crystal silicon solar batteries assembly provided by the invention.Described crystal silicon solar assembly from top to bottom comprises successively: front glass sheet 200, selectivity filter coating 100, transparent encapsulation material 300, solar cell 400, encapsulating material 500 and backboard 600.Wherein, described selectivity filter coating 100 adopts selectivity filter coating provided by the invention.
Figure 4 shows that the structural representation of an embodiment according to a kind of Thinfilm solar cell assembly provided by the invention.Described Thinfilm solar cell assembly from top to bottom comprises successively: front glass sheet 200, selectivity filter coating 100, transparent substrates 700, solar cell 400, encapsulating material 500 and backboard 600.Wherein, described selectivity filter coating 100 adopts selectivity filter coating provided by the invention.
Figure 5 shows that the structural representation of an embodiment according to a kind of Thinfilm solar cell assembly provided by the invention.Described Thinfilm solar cell assembly from top to bottom comprises successively: front glass sheet 200, selectivity filter coating 100, transparent encapsulation material 500, solar cell 400 and substrate 700.Wherein, described selectivity filter coating 100 adopts selectivity filter coating provided by the invention.
With reference to figure 6, Figure 6 shows that and adopt PECVD (Plasma Enhanced Chemical VaporDeposition, plasma enhanced chemical vapor deposition) method deposits selectivity filter coating provided by the invention on a glass substrate, tests the spectrogram of transmitance (T) and the reflectivity (R) obtained.Wavelength is reflected substantially lower than the visible ray of 600nm, makes selectivity filter coating present silvery white, makes the connecting line at the selectivity filter coating back side etc. invisible; The long-wave band sunlight that wavelength is greater than 600nm then can be absorbed by battery through selectivity filter coating and convert electric energy to.
Selectivity filter coating provided by the invention is applied to the preparation of solar module, the crystal silicon solar batteries prepared assembly/Thinfilm solar cell assembly can present the silvery white or faint yellow of one, and the aesthetic property of outward appearance obtains and promotes significantly.Therefore, crystal silicon solar batteries assembly/Thinfilm solar cell assembly provided by the invention not only can be widely used in BIPV field, also can be applicable to electronic product, automobile industry, yacht etc. have strict demand field to outward appearance.As shown in Figure 7, this photovoltaic module can incorporate other products surface, becomes the energy almost hidden and lose.In addition, the preparation technology of selectivity filter coating is simple and easy to do, is easy to industrially promote.
Although describe in detail about example embodiment and advantage thereof, being to be understood that when not departing from the protection range of spirit of the present invention and claims restriction, various change, substitutions and modifications can being carried out to these embodiments.For other examples, those of ordinary skill in the art should easy understand maintenance scope in while, the order of processing step can change.
In addition, range of application of the present invention is not limited to the technique of the specific embodiment described in specification, mechanism, manufacture, material composition, means, method and step.From disclosure of the present invention, to easily understand as those of ordinary skill in the art, for the technique existed at present or be about to develop, mechanism, manufacture, material composition, means, method or step later, wherein their perform the identical function of the corresponding embodiment cardinal principle that describes with the present invention or obtain the identical result of cardinal principle, can apply according to the present invention to them.Therefore, claims of the present invention are intended to these technique, mechanism, manufacture, material composition, means, method or step to be included in its protection range.
Claims (12)
1. a preparation method for selectivity filter coating, described preparation method comprises the steps:
A) amorphous silicon layer is formed on a transparent substrate;
B) on described amorphous silicon layer, silicon oxide film is formed;
C) on described silicon oxide film, amorphous silicon layer is formed;
It is characterized in that,
At least alternately perform described step b) and described step c) twice.
2. preparation method according to claim 1, wherein, described amorphous silicon layer adopts the mist deposition of silane and hydrogen to be formed.
3. preparation method according to claim 1, wherein, the thickness range of described amorphous silicon layer is 1nm ~ 50nm.
4. preparation method according to claim 1, wherein, described silicon oxide film adopts the mist deposition of carbon dioxide, silane and hydrogen to be formed.
5. preparation method according to claim 1, wherein, the thickness range of described silicon oxide film is 20nm ~ 200nm.
6. preparation method according to claim 1, wherein, the depositing temperature of described amorphous silicon layer and/or described silicon oxide film is 100 DEG C ~ 500 DEG C.
7. preparation method according to claim 1, wherein, the pressure forming described amorphous silicon layer and/or described silicon oxide film is: 0.1mbar ~ 5mbar.
8. preparation method according to claim 1, wherein, the power density forming described amorphous silicon layer and/or described silicon oxide film is 0.1mW/cm
2~ 10mW/cm
2.
9. a selectivity filter coating, described selectivity filter coating comprises successively: transparent substrates, amorphous silicon layer, silicon oxide film, amorphous silicon layer;
Described silicon oxide film and described amorphous silicon layer are alternately distributed, and at least alternately twice;
It is characterized in that,
Described selectivity filter coating adopts any one preparation method in claim 1 ~ 8 to be prepared from.
10. a crystal silicon solar batteries assembly, described crystal silicon solar assembly from top to bottom comprises successively: front glass sheet, selectivity filter coating, transparent encapsulation material, solar cell, encapsulating material and backboard;
It is characterized in that,
Described selectivity filter coating adopts the selectivity filter coating disclosed in claim 9.
11. 1 kinds of Thinfilm solar cell assemblies, described Thinfilm solar cell assembly from top to bottom comprises successively: front glass sheet, selectivity filter coating, transparent substrates, solar cell, encapsulating material and backboard;
It is characterized in that,
Described selectivity filter coating adopts the selectivity filter coating disclosed in claim 9.
12. 1 kinds of Thinfilm solar cell assemblies, described Thinfilm solar cell assembly from top to bottom comprises successively: front glass sheet, selectivity filter coating, transparent encapsulation material, solar cell and substrate;
It is characterized in that,
Described selectivity filter coating adopts the selectivity filter coating disclosed in claim 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510378792.0A CN104993001A (en) | 2015-06-29 | 2015-06-29 | Selective filtering membrane, preparation method and solar cell module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510378792.0A CN104993001A (en) | 2015-06-29 | 2015-06-29 | Selective filtering membrane, preparation method and solar cell module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104993001A true CN104993001A (en) | 2015-10-21 |
Family
ID=54304785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510378792.0A Pending CN104993001A (en) | 2015-06-29 | 2015-06-29 | Selective filtering membrane, preparation method and solar cell module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104993001A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105262427A (en) * | 2015-11-11 | 2016-01-20 | 连云港神舟新能源有限公司 | Double-sided solar-cell-module double-sided light receiving device |
| CN110501772A (en) * | 2019-08-02 | 2019-11-26 | 济南大学 | Surpass the ultrahigh resolution colored filter and its preparation method and application on surface based on amorphous silicon hydride |
| CN113506721A (en) * | 2021-06-25 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | Method for forming amorphous silicon film |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588647A (en) * | 2004-08-15 | 2005-03-02 | 李毅 | Non crystal silicon standard solar cell |
| US20110265866A1 (en) * | 2010-04-28 | 2011-11-03 | Min-Seok Oh | Solar cell and method for manufacturing the same |
| CN103227226A (en) * | 2013-05-09 | 2013-07-31 | 南开大学 | Photonic crystal amorphous silicon membrane solar battery |
| KR20140091632A (en) * | 2013-01-11 | 2014-07-22 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
| CN204144286U (en) * | 2014-08-30 | 2015-02-04 | 海润光伏科技股份有限公司 | The two glass battery component of solar energy with reflection paster |
| CN104600142A (en) * | 2014-12-24 | 2015-05-06 | 英利集团有限公司 | Photovoltaic module |
-
2015
- 2015-06-29 CN CN201510378792.0A patent/CN104993001A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588647A (en) * | 2004-08-15 | 2005-03-02 | 李毅 | Non crystal silicon standard solar cell |
| US20110265866A1 (en) * | 2010-04-28 | 2011-11-03 | Min-Seok Oh | Solar cell and method for manufacturing the same |
| KR20140091632A (en) * | 2013-01-11 | 2014-07-22 | 엘지전자 주식회사 | Solar cell and method for manufacturing the same |
| CN103227226A (en) * | 2013-05-09 | 2013-07-31 | 南开大学 | Photonic crystal amorphous silicon membrane solar battery |
| CN204144286U (en) * | 2014-08-30 | 2015-02-04 | 海润光伏科技股份有限公司 | The two glass battery component of solar energy with reflection paster |
| CN104600142A (en) * | 2014-12-24 | 2015-05-06 | 英利集团有限公司 | Photovoltaic module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105262427A (en) * | 2015-11-11 | 2016-01-20 | 连云港神舟新能源有限公司 | Double-sided solar-cell-module double-sided light receiving device |
| CN110501772A (en) * | 2019-08-02 | 2019-11-26 | 济南大学 | Surpass the ultrahigh resolution colored filter and its preparation method and application on surface based on amorphous silicon hydride |
| CN113506721A (en) * | 2021-06-25 | 2021-10-15 | 上海华虹宏力半导体制造有限公司 | Method for forming amorphous silicon film |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kumar et al. | Performance comparison of BAPV and BIPV systems with c-Si, CIS and CdTe photovoltaic technologies under tropical weather conditions | |
| Deubener et al. | Glasses for solar energy conversion systems | |
| Lim et al. | Highly transparent amorphous silicon solar cells fabricated using thin absorber and high-bandgap-energy n/i-interface layers | |
| CN105378510A (en) | Anti-glare film for solar cell module, solar cell module provided with anti-glare film, and method for manufacturing same | |
| TWI517425B (en) | Solar car sunroof and its production method | |
| CN103017383B (en) | Solar selective absorption film system with adjustable color and preparation method thereof | |
| Janthong et al. | Management of light-trapping effect for a-Si: H/µc-Si: H tandem solar cells using novel substrates, based on MOCVD ZnO and etched white glass | |
| CN110931592A (en) | Copper indium gallium selenide solar cell for BIPV | |
| Myong et al. | Silicon-based thin-film solar cells fabricated near the phase boundary by VHF PECVD technique | |
| Meillaud et al. | Realization of high efficiency micromorph tandem silicon solar cells on glass and plastic substrates: Issues and potential | |
| Heo et al. | ZnO: B back reflector with high haze and low absorption enhanced triple-junction thin film Si solar modules | |
| Sai et al. | Light trapping effect of patterned back surface reflectors in substrate-type single and tandem junction thin-film silicon solar cells | |
| CN104993001A (en) | Selective filtering membrane, preparation method and solar cell module | |
| CN103296145A (en) | Photonic crystal back reflector provided with adjustable forbidden band and applied to silicon-based thin-film solar cell | |
| CN203132188U (en) | Color-adjustable solar energy selective absorption film system | |
| Noh et al. | Antireflective coating using a WO3–TiO2 nanoparticle photocatalytic composition for high efficiency thin-film Si photovoltaic modules | |
| Basher et al. | Aesthetically appealing building integrated photovoltaic systems for net-zero energy buildings. Current status, challenges, and future developments—A review | |
| Hishida et al. | Designing band offset of a-SiO: H solar cells for very high open-circuit voltage (1.06 V) by adjusting band gap of p–i–n junction | |
| Lopez-Garcia et al. | Ultrathin wide‐bandgap a‐Si: H‐based solar cells for transparent photovoltaic applications | |
| CN102983217B (en) | Improving one's methods and structure of solar cell properties | |
| Tsai et al. | Tandem amorphous/microcrystalline silicon thin-film solar modules: developments of novel technologies | |
| Caglar et al. | Nanocrystalline zinc oxide for surface morphology control in thin-film silicon solar cells | |
| Fecioru-Morariu et al. | High quality amorphous Si solar cells for large area mass production Micromorph tandem cells | |
| JP2013509707A (en) | Solar cell and manufacturing method thereof | |
| CN202513170U (en) | High transparency conductive film glass for thin film solar battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20151021 |
|
| RJ01 | Rejection of invention patent application after publication |