WO2004095110A1 - Regulation d'exposition - Google Patents

Regulation d'exposition Download PDF

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Publication number
WO2004095110A1
WO2004095110A1 PCT/EP2003/004283 EP0304283W WO2004095110A1 WO 2004095110 A1 WO2004095110 A1 WO 2004095110A1 EP 0304283 W EP0304283 W EP 0304283W WO 2004095110 A1 WO2004095110 A1 WO 2004095110A1
Authority
WO
WIPO (PCT)
Prior art keywords
intensity
deflection
maximum
minimum
deflectable mirror
Prior art date
Application number
PCT/EP2003/004283
Other languages
English (en)
Other versions
WO2004095110A8 (fr
Inventor
Peter Dürr
Torbjörn Sandström
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Micronic Laser Systems Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., Micronic Laser Systems Ab filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority to PCT/EP2003/004283 priority Critical patent/WO2004095110A1/fr
Priority to JP2004571029A priority patent/JP4188322B2/ja
Priority to DE60333398T priority patent/DE60333398D1/de
Priority to EP03727355A priority patent/EP1616211B1/fr
Priority to US10/462,010 priority patent/US7106490B2/en
Priority to US10/977,394 priority patent/US6956692B2/en
Publication of WO2004095110A1 publication Critical patent/WO2004095110A1/fr
Publication of WO2004095110A8 publication Critical patent/WO2004095110A8/fr
Priority to US11/272,925 priority patent/US7158280B2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices

Definitions

  • the present application relates to a method and an apparatus for controlling exposure of a surface of a substrate.
  • the prior art basically describes two different approaches for implementing a pattern generator using a SLM for generating a pattern to be transferred to a surface of a substrate.
  • the first approach uses large pixel deflections, i.e., the deflection is large when compared to the radiation wavelength used. Further, a substantially digital, i.e., on and off, addressing is used.
  • An example for this first approach is the Texas Instrument's DLP chip with deflection angles of +/- 10°. With a pixel grid size of 17 ⁇ m the system can be described by classical light rays which are reflected by the individual pixels either into a projection lens (bright spot) or to an absorber (dark spot) . Grey pixels can be obtained by time multiplexing for continuous light sources, and by multiple exposures for pulsed light sources.
  • the second approach uses a deflection at about half the radiation wavelength and an analog addressing.
  • the SLM is described as a phase grating causing in- terference. Reflected light is only found in discrete diffraction orders.
  • a micro lithography pattern generator having a SLM uses the zero order to gen- erate a pattern. That is bright spots are obtained for non-deflected pixels, and dark spots are obtained for deflected pixels. Grey pixels can be generated in one light pulse by partial deflection.
  • the above described first prior art approach is disadvanta- geous in that a large amount of time for the multiple exposures is required. This reduces the throughput, a second very important performance parameter of micro lithography pattern generators. Patterning the substrates using analog addressing but still with a large deflection would cure this disadvantage.
  • the precision requirements in the deflection control can not be met as the intensity in the generated image changes very quickly in a small fraction of the deflection addressing range. Even worse, the non-symmetrical illumination of the projection optics for grey pixels ruins CD control completely, even for minute focus errors .
  • Fig. 5 is a graph of the relative intensity versus the relative deflection of a mirror of the SLM, i.e., the relative intensity of light at a predetermined pixel on a substrate to be patterned in re- sponse to a specific deflection of the mirror.
  • the first maximum 50 of the intensity is obtained when the relative deflection is zero
  • the first minimum 52 of the intensity is obtained when the relative deflec- tion is one.
  • a second maximum and a second minimum are shown.
  • binary switching of intensity between maximum and zero intensity can be simply achieved by switching deflection between zero deflection and a relative deflection of one.
  • the maximum intensity decreases rapidly with growing deflection. Therefore, alternatively, any large relative deflection may be used for producing (near) zero intensity.
  • a continuous change in intensity from nominal dose (maximum dose or relative intensity one) to zero (reached at a relative deflection one or nominal deflection) can be obtained.
  • Fig. 6 shows the relative intensity versus the relative deflection for pixels (mirrors) having a bend or non-planarity.
  • the non-planarity is quite strong, and as can be seen, the intensity in the first maximum 50 is lower than shown in Fig. 5. More importantly, the first minimum 52 does not reach zero intensity any more. This means that the contrast is reduced. Although this reduced contrast is not a problem itself as long as the minimum is reasonably low, a serious consequence of the non-planarity of the mirror is that the phase of the reflected light changes. This can be seen in detail in Fig. 7 showing the complex amplitude of the reflected light. Corresponding points in Fig.
  • Fig. 8 and 9 are Bossung-plots of the CD versus a defocus- ing parameter.
  • Fig. 8 and 9 show groups of curves for different doses, wherein the dose is the integral of the intensity over the exposure time.
  • Fig. 8 shows the Bossung-plot for an ideally planar micro-mirror. The curves show no skew, i.e., a good control of the CD. When going through focus, the change of the CD is a second-order effect.
  • Fig. 9 shows the Bossung-plot for a badly non-planar pixel. The graphs show a pronounced skew, which is a first-order change of the CD with defocus.
  • the present invention provides a method for controlling exposure of a surface of a substrate in a process of structuring the substrate with light of a predetermined intensity, the light being directed to the surface by means of a deflectable mirror, the intensity having a first maximum at a first deflection of the deflectable mirror, a first minimum at a second deflection of the deflectable mirror, a second maximum at a third deflection of the deflectable mirror, and a second minimum at a fourth deflection of the deflectable mirror, the method comprising:
  • the threshold intensity being equal to or less than the inten- sity of the second maximum
  • controlling the deflection of the deflectable mirror to be between the first deflection and the second deflection when the predetermined intensity is greater than the threshold intensity, and to be equal to or greater than the third deflection when the predetermined intensity is equal to or less than the threshold intensity.
  • the present invention provides an apparatus for controlling exposure of a surface of a substrate in a process of structuring the substrate with light of a predetermined inten- sity, the light being directed to the surface by means of a deflectable mirror, the intensity having a first maximum at a first deflection of the deflectable mirror, a first minimum at a second deflection of the deflectable mirror, a second maximum at a third deflection of the deflectable mirror, and a second minimum at a fourth deflection of the deflectable mirror, the apparatus comprising:
  • means for receiving a signal representing the predetermined intensity means for receiving a signal representing a threshold intensity, the threshold intensity being equal to or less than the intensity of the second maximum;
  • a comparator for determining whether the predetermined intensity is greater than the threshold intensity
  • a controller for controlling the deflection of the deflectable mirror to be between the first deflection and the sec- ond deflection when the predetermined intensity is greater than the threshold intensity, and to be equal to or greater than the third deflection when the predetermined intensity is equal to or less than the threshold intensity.
  • the present invention provides an imaging device comprising a light source for emitting light, a spatial light modulator defining a pixel pattern to be transferred to a surface of a substrate, receiving light from the light source, and comprising the inventive apparatus, and a movable table supporting the substrate.
  • the inventive concept to use the second minimum or a higher minimum of the intensity response for dark areas on the substrate.
  • the present application is particularly advantageous for micro-mirrors in a spatial light modulator (SLM) where the diffraction pattern of the micro-mirror is highly sensitive to the flatness, or planarity, of a micro- mirror.
  • SLM spatial light modulator
  • Fig. 1 is a graph of the relative intensity versus the relative deflection showing only those portions used for the pattern generation in accordance with the present application;
  • Fig. 2 is a graph of the complex amplitude of the inten- sity of Fig. 1 showing only those portions used for the pattern generation in accordance with the present application;
  • Fig. 3 is a schematic view of the inventive apparatus ac- cording to a preferred embodiment
  • Fig. 4 is a schematic view of a pattern generator including a SLM being operated in accordance with the present invention
  • Fig. 5 is a graph of the relative intensity versus the relative deflection for a perfectly planar mirror
  • Fig. 6 is a graph of the relative intensity versus the relative deflection for a non-planar mirror
  • Fig. 7 is a graph of the complex amplitude of the intensity of Fig. 6;
  • Fig. 8 is a Bossung-plot for a planar mirror
  • Fig. 9 is a Bossung-plot for a non-planar mirror.
  • Fig. 1 is, similar to Fig. 6, a graph of the relative intensity versus the relative deflection, however, only those portions 58, 60 are shown which are actually used for the pattern generation in accordance with the present invention.
  • Fig. 2 is a graph of the complex amplitude of the intensity of Fig. 1, and likewise only shows those portions used for the pattern generation in accordance with the present invention.
  • the complex amplitude in accordance with the present invention is much smaller for the second minimum (d) than for the first minimum (b) . Therefore, using the second minimum instead of the first minimum causes much less problems with the defocus as was described above with reference to the Bossung-plots of Fig. 8 and 9.
  • grey pixels i.e. pixels with intermediate inten- sity, still have a phase different from the phase of the first maximum, the most critical region close to 90° (positive imaginary amplitude) is completely avoided.
  • the CD control is better and a slight defocus is less critical.
  • a Bossung- plot similar to that shown in Fig. 8 for an ideally planar pixel is achieved.
  • good CD control performance is achieved by the present invention even for a sub- strate to be patterned slightly out of focus.
  • the behavior is even better than shown in Fig. 1 and 2 since the non-planarity of the mirror underlying the graphs of the Fig. 1, 2, 6 and 7 is assumed to be quite large.
  • the co - plex amplitudes used according to the present invention stay even closer to the real axis. Therefore, the present invention provides for a much better CD control performance through focus .
  • a non-linear driver circuit which provides for high deflection addressing resolution in the first portion 58 between relative deflection zero and 0.8, relatively low deflection addressing resolution in the second portion 60 and a large deflection addressing range at the same time.
  • the preferred non-linear driver circuit allows for a good relative grey scale resolution by providing a high deflection addressing resolution for low relative deflections where the intensity changes fast with the deflection and a lower deflection addressing resolution in the upper half of the deflection range where the intensity changes only slowly with the deflection and less deflection resolution is required therefore.
  • the present invention provides a simple way to obtain high grey scale accuracy with non-planar mirrors. In particular, the present invention is easier to implement than any further improvement of the planarity of the mirrors . It merely requires the rather simple adaptation of the controllers controlling the micro-mirrors. This adaptation can be done starting from existing SLM chips and micro lithography pattern generators. Thereby, the present inven- tion allows faster and overall cheaper development of SLMs and pattern generators with the desired CD uniformity.
  • the inventive concept is easily implemented for pattern generators for other purposes than micro lithography using an SLM as a diffractive phase grating. Regardless of what technology is used for realizing SLMs, and what application or purpose they are made for, for real devices one has to be aware of an unwanted and systematic non-planarity and a resulting phase variation that is hard and costly to reduce by technological development. In all these cases the present invention improves the image quality with quite little effort.
  • Fig. 3 shows the inventive apparatus according to a pre- ferred embodiment.
  • the apparatus 70 comprises an input 72 for receiving a signal representing a predetermined intensity and an input 74 for receiving a signal representing a threshold intensity, preferably a non-zero threshold intensity.
  • the signal representing the predetermined intensity usually is provided by an external device, e.g. a computer, in the memory of which the pattern to be transferred to a substrate is stored as a bitmap.
  • the apparatus 70 further comprises a comparator 80 for determining whether the predetermined intensity received at the input 72 is greater than the threshold intensity received at input 74. Further, the apparatus 70 comprises a controller 82 connected to the input 72 and receiving the predetermined intensity.
  • the controller 82 is connected to the comparator 80 and receives a signal indicating whether the predetermined intensity at input 72 is greater than the threshold intensity at input 74.
  • Controller 82 controls a driver circuit 84 which is connected to actuators 86a, 8 ⁇ b, for examples electrodes arranged in parallel to and below a micro-mirror 78c.
  • the driver 84 applies voltages to the actuators 86a, 86b thereby producing electrostatic fields and electrostatic forces between the actuators 86a, 86b and the micro-mirror 78c.
  • the micro-mirror 78c is supported by hinges 88a, 88b.
  • the micro-mirror 78c is a non-planar micro-mirror the intensity response versus deflection (intensity response curve) and the complex amplitude of which are shown in Fig. 6 and 7.
  • the intensity of the second maximum is stored.
  • the deflection of the mirror will be controlled such that an intensity in the first portion 58 in Fig. 1 and 2 is obtained, i.e., a deflection between the deflection corresponding to the first maximum and the deflection corresponding to the first minimum.
  • the controller 82 via the driver circuit 84 and the actuators 86a, 86b will control the deflection of the micro-mirror so as to obtain an intensity to be in the sec- ond portion 16 shown in Fig. 1 and 2, i.e., between the deflections corresponding to the second maximum and the second minimum.
  • Fig. 4 shows an example for a pattern generator 110 for the exposure of a substrate 112.
  • the pattern generator is for example similar to the one described above for the second prior art approach, i.e. the system no longer described by classical light rays, and a SLM used is described as a phase grating generating interference.
  • the SLM is con- trolled in accordance with the present invention as outlined above.
  • the substrate 112 is for example a semiconductor wafer or a quartz plate with a thin chrome layer, which is to be patterned to obtain a mask.
  • the pattern to be produced is generated by appropriately programming the pixels (mirrors) of the SLM.
  • the pattern is transferred via an imaging system having two lenses 116 and 118 to the substrate.
  • a light source 120 e.g., laser, illuminates the SLM 14 via optics 126 and the partially reflective plate 128.
  • a screen 130 is arranged with an aperture 132. In this way, light reflected from a micro-mirror of the SLM not being deflected passes through the aperture 132 and illuminates the associated pixel on the substrate 112.
  • the screen 130 blocks light reflected from a micro-mirror of the SLM being deflected.
  • the substrate 112 is supported by a movable table 134.
  • the present invention is preferably applied to systems which can not be described by classical light rays. List of reference numerals

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

L'invention concerne un procédé et un dispositif destinés à réguler l'exposition d'une surface d'un substrat, dans une opération de structuration du substrat, à une lumière d'une intensité prédéterminée, cette lumière étant dirigée vers la surface au moyen d'un miroir orientable. L'intensité présente une première valeur maximale (50) à une première orientation du miroir, une première valeur minimale (52) à une deuxième orientation du miroir orientable, une seconde valeur maximale (54) à une troisième orientation du miroir orientable, et une seconde valeur minimale (56) à une quatrième orientation du miroir orientable. Un signal représentant l'intensité prédéterminée et un signal représentant une intensité seuil sont reçus, l'intensité seuil étant égale ou inférieure à l'intensité de la seconde valeur maximale (54). On détermine si l'intensité prédéterminée est supérieure à l'intensité seuil. L'orientation du miroir orientable est régulée à un niveau situé entre la première orientation et la seconde orientation lorsque l'intensité prédéterminée est supérieure à l'intensité seuil, et à un niveau égal ou supérieur à la troisième orientation lorsque l'intensité prédéterminée est égale ou inférieure à l'intensité seuil.
PCT/EP2003/004283 2001-12-14 2003-04-24 Regulation d'exposition WO2004095110A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
PCT/EP2003/004283 WO2004095110A1 (fr) 2003-04-24 2003-04-24 Regulation d'exposition
JP2004571029A JP4188322B2 (ja) 2003-04-24 2003-04-24 基板表面の露光を制御する方法および装置
DE60333398T DE60333398D1 (de) 2003-04-24 2003-04-24 Belichtungssteuerung
EP03727355A EP1616211B1 (fr) 2003-04-24 2003-04-24 Réglage d'exposition
US10/462,010 US7106490B2 (en) 2001-12-14 2003-06-12 Methods and systems for improved boundary contrast
US10/977,394 US6956692B2 (en) 2003-04-24 2004-10-29 Method and apparatus for controlling exposure of a surface of a substrate
US11/272,925 US7158280B2 (en) 2001-12-14 2005-11-14 Methods and systems for improved boundary contrast

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2003/004283 WO2004095110A1 (fr) 2003-04-24 2003-04-24 Regulation d'exposition

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
PCT/SE2002/002310 Continuation-In-Part WO2003052516A1 (fr) 2001-12-14 2002-12-11 Procede et dispositif de structuration d'une piece

Related Child Applications (3)

Application Number Title Priority Date Filing Date
US10/462,010 Continuation-In-Part US7106490B2 (en) 2001-12-14 2003-06-12 Methods and systems for improved boundary contrast
US10/977,394 Continuation US6956692B2 (en) 2003-04-24 2004-10-29 Method and apparatus for controlling exposure of a surface of a substrate
US11/272,925 Continuation-In-Part US7158280B2 (en) 2001-12-14 2005-11-14 Methods and systems for improved boundary contrast

Publications (2)

Publication Number Publication Date
WO2004095110A1 true WO2004095110A1 (fr) 2004-11-04
WO2004095110A8 WO2004095110A8 (fr) 2005-01-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/004283 WO2004095110A1 (fr) 2001-12-14 2003-04-24 Regulation d'exposition

Country Status (4)

Country Link
EP (1) EP1616211B1 (fr)
JP (1) JP4188322B2 (fr)
DE (1) DE60333398D1 (fr)
WO (1) WO2004095110A1 (fr)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6504644B1 (en) * 1998-03-02 2003-01-07 Micronic Laser Systems Ab Modulator design for pattern generator
WO2003023494A1 (fr) * 2001-09-12 2003-03-20 Micronic Laser Systems Ab Amelioration d'un procede et d'appareils utilisant un modulateur spatial de lumiere slm

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6504644B1 (en) * 1998-03-02 2003-01-07 Micronic Laser Systems Ab Modulator design for pattern generator
WO2003023494A1 (fr) * 2001-09-12 2003-03-20 Micronic Laser Systems Ab Amelioration d'un procede et d'appareils utilisant un modulateur spatial de lumiere slm

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
SEUNARINE K ET AL: "Techniques to improve the flatness of reflective micro-optical arrays", SENSORS AND ACTUATORS A, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, vol. 78, no. 1, January 1999 (1999-01-01), pages 18 - 27, XP004244576, ISSN: 0924-4247 *

Also Published As

Publication number Publication date
JP2005535941A (ja) 2005-11-24
DE60333398D1 (de) 2010-08-26
EP1616211A1 (fr) 2006-01-18
JP4188322B2 (ja) 2008-11-26
EP1616211B1 (fr) 2010-07-14
WO2004095110A8 (fr) 2005-01-27

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