WO2004093002A1 - Transpondeur et procede de fabrication - Google Patents

Transpondeur et procede de fabrication Download PDF

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Publication number
WO2004093002A1
WO2004093002A1 PCT/DE2004/000725 DE2004000725W WO2004093002A1 WO 2004093002 A1 WO2004093002 A1 WO 2004093002A1 DE 2004000725 W DE2004000725 W DE 2004000725W WO 2004093002 A1 WO2004093002 A1 WO 2004093002A1
Authority
WO
WIPO (PCT)
Prior art keywords
antenna
transponder
layer
connection
windings
Prior art date
Application number
PCT/DE2004/000725
Other languages
German (de)
English (en)
Inventor
Marcus Halik
Hagen Klauk
Günter Schmid
Ute Zschieschang
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of WO2004093002A1 publication Critical patent/WO2004093002A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/12—Supports; Mounting means
    • H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/2208—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems
    • H01Q1/2225—Supports; Mounting means by structural association with other equipment or articles associated with components used in interrogation type services, i.e. in systems for information exchange between an interrogator/reader and a tag/transponder, e.g. in Radio Frequency Identification [RFID] systems used in active tags, i.e. provided with its own power source or in passive tags, i.e. deriving power from RF signal
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q23/00—Antennas with active circuits or circuit elements integrated within them or attached to them
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics

Definitions

  • the invention relates to a transponder with an antenna and a transponder circuit connected to the antenna.
  • a transponder is understood below to mean a device which takes energy from an electromagnetic field with an antenna and operates a transponder circuit with this energy. After or with the start-up of the transponder circuit, the device can receive data signals from an external reading device and send back “response signals”.
  • Silicon technology manufactured Specifically, a silicon transponder circuit is first produced, which is then attached to a substrate provided with a metal antenna, for example a polymer film. The silicon transponder circuit is electrically connected to the antenna. The positioning of the silicon transponder circuit on the substrate takes place, for example, with the aid of a placement machine that is common in printed circuit board technology, that is to say in “pick and place” technology. The electrical connection of the silicon transponder circuit to the metal antenna takes place, for example, by bonding.
  • the invention has for its object to provide a transponder that is particularly easy and inexpensive to manufacture.
  • the Transponder circuit is formed by structured layers arranged on a substrate, of which at least one layer at least partially also forms the antenna.
  • transponder has a layer which belongs both to the transponder circuit and to the antenna.
  • the antenna can be "manufactured" during the manufacture of the transponder circuit, so that separate manufacturing steps for the manufacture of the
  • transponder due to the "integrated" or simultaneous manufacture of the transponder circuit and the antenna in a common layer, additional method steps for connecting the transponder circuit and the antenna are also eliminated. For example, there is no need to "populate" the substrate with a separately manufactured transponder circuit - e.g. B. in the "pick and place” technology already mentioned at the beginning - in addition there is no electrical connection - for example by bonding - of the transponder circuit to the antenna.
  • the transponder circuit has at least two conductive layers, an insulation layer arranged between the two conductive layers and a semiconductor layer.
  • the antenna is then preferably formed in one of the two conductive layers.
  • circuits on flexible substrates which can be manufactured in large quantities, for example in the "roll-to-roll” process, are of particular interest.
  • the high price pressure of such applications in particular due to the competition with the printed bar code, allows the use of (crystalline) silicon-based circuits for economic reasons almost exclusively for special applications that place particularly high performance demands; for the mass market, crystalline silicon-based circuits are less suitable due to the manufacturing costs involved.
  • the semiconductor layer of the transponder circuit is an organic semiconductor layer; because organic semiconductor layers are relatively easy to manufacture and apply inexpensively.
  • organic semiconductor layers instead of organic semiconductor layers, other semiconductor layers that can be applied to flexible foils can advantageously also be used; Amorphous layers, in particular amorphous silicon layers, are conceivable, for example.
  • Organic field effect transistors are preferably formed in the organic semiconductor layer; because with
  • Field effect transistors based on organic semiconductors can be manufactured very inexpensively for electronic circuits for mass applications.
  • the antenna is preferably a
  • Loop antenna because loop antennas offer good reception properties.
  • the antenna preferably has a large number of antenna windings; the number of antenna turns determines u. a. the resonance frequency of the transponder. In order to enable the arrangement of a large number of antenna windings in one plane, it is considered advantageous if the antenna windings are designed in a spiral. In addition, the antenna can also have "double-wound" antenna windings.
  • Transponder circuit is arranged in an inner region of the substrate enclosed by the antenna.
  • the transponder circuit has at least one field effect transistor, the drain and source connection of which is formed in one conductive layer and the gate connection of which is formed in the other conductive layer.
  • the antenna can preferably be formed in the conductive layer forming the drain and source connection; alternatively, the antenna can also be arranged in the electrically conductive layer forming the gate connection.
  • the substrate should be flexible so that the transponder can be attached to any packaging or to any surface;
  • a suitable substrate material for the production of a transponder are commercial plastic films, such as, for example, PEN or PET films (PEN:
  • PET polyethylene terephthalate
  • paper or glass can also be used as the substrate material, so that the transponders can be "processed" directly on packaging.
  • metals such as Copper, aluminum, titanium, nickel, chrome, gold, silver, palladium and platinum as well as conductive polymers such as PEDOT: PSS Baytron P ® or polyaniline are suitable.
  • the insulation layer arranged between the two electrically conductive layers can preferably be formed by inorganic materials such as silicon dioxide, aluminum oxide, TaN x or by organic polymers as a dielectric.
  • the contact layer forming field effect transistors can consist of the same materials as the gate layer forming the gate connection; However, it must be taken into account that the material used for the contact layer must be compatible with the respective semiconductor material.
  • Organic semiconductors are preferably used as the semiconductor material; Suitable organic semiconductor materials are, for example, pentazene, tetrazene, polythiophenes or oligothiophenes.
  • the antenna and the transponder circuit are suitable for frequencies in the range of 13.56 MHz and for frequencies in the range of 125 kHz, since these frequencies are currently standard frequencies for the use of transponders.
  • the field effect transistor or transistors of the transponder circuit can have, for example, a bottom gate structure or a top gate structure:
  • a bottom gate structure is understood to mean a structure in which the gate electrodes of the field effect transistors are arranged directly on the substrate.
  • the electrically insulating dielectric layer is then arranged on this “gate layer” which in turn rests on the "contact layer” forming the source and drain contacts.
  • the layer sequence is reversed; this means that the contact layer forming the source and drain contacts lies directly on the substrate.
  • the insulation layer is arranged on the contact layer, on which the gate layer forming the gate connections then lies.
  • the invention also relates to a method for producing a transponder, in which an antenna and a transponder circuit connected to the antenna are produced.
  • the invention is based on the object of specifying a particularly simple and inexpensive production method for transponders.
  • At least one electrically conductive layer is applied to a substrate, which at least partially forms both the antenna and the transponder circuit.
  • Show to illustrate the invention 1 shows an exemplary embodiment of a transponder according to the invention in plan view
  • Figure 2 shows the transponder according to Figure 1 in a schematic cross section
  • FIG. 3 shows a second embodiment of a transponder according to the invention in the
  • FIGS. 1 to 3 The same reference numerals are used in FIGS. 1 to 3 for identical or comparable components.
  • FIG. 1 shows a transponder 10 with a
  • Antenna 20 and a polymer chip 30 are understood to mean an electronic circuit which has at least one organic semiconductor; however, this does not mean that the polymer chip 30 only has to have polymeric materials. Rather, the polymer chip 30 can be formed both from organic semiconductor material and from inorganic materials.
  • the antenna 20 is designed for a frequency range of 125 kHz and / or for 13.56 MHz.
  • the antenna 20 is used to receive electromagnetic energy, which is converted into electrical energy by means of the antenna 20 and fed into the polymer chip 30 for its operation. With the help of the energy fed in by the antenna 20
  • the transponder 10 is designed such that its antenna 20 and the polymer chip 30 can be produced simultaneously; this means that the antenna 20 is "manufactured" during the
  • Polymer chip 30 is formed. No additional process step is therefore necessary to manufacture the antenna 20.
  • FIG. 2 shows the transponder 10 according to FIG. 1 in a schematic cross section.
  • the polymer chip 30, which is electrically connected to the antenna 20, can be seen in FIG.
  • the polymer chip 30 consists of at least one organic field effect transistor 40 which is formed by a plurality of layers arranged one above the other.
  • the lowest layer is formed by a substrate or an insulating substrate layer 50, which can be, for example, a commercial plastic film, paper or glass.
  • a first electrically conductive layer 60 which is structured, is applied to the substrate layer 50.
  • the electrically conductive layer 60 forms a gate connection 70 of the organic field effect transistor 40, an inner antenna connection 80, an outer antenna connection 90 and antenna windings 100 of the antenna 20.
  • the inner antenna connector 80 and the outer antenna connector 90 are additionally identified in FIG. 1 by their reference symbols; one can see that the inner antenna connection 80 is arranged inside the antenna area of the antenna 20, whereas the outer antenna connection 90 lies outside this inner area of the antenna 20.
  • the electrically conductive layer 60 is structured; this means that the Antenna windings 100, the outer and inner antenna connections 90 and 80 and the gate connection 70 are electrically separated from one another by an insulation layer 110.
  • the insulation layer 110 is designed such that it extends over the gate connection 70, over the antenna windings 100 and over the inner and outer antenna connections 80 and 90 of the antenna 20.
  • the insulation layer 110 is also structured in turn and has openings in which electrical connection contacts 120 are formed.
  • the electrical connection contacts 120 serve to connect the electrically conductive layer 60 to a. to connect to the second electrical layer 130 applied on the insulation layer 110.
  • This second electrically conductive layer 130 forms the source and drain connections of the organic field effect transistor 40 and is therefore referred to below as the “contact layer”.
  • the first electrically conductive layer 60 that identifies the gate connection 70 of the organic field effect transistor 40 is correspondingly , hereinafter referred to as "gate position".
  • the contact layer 130 forms a source connection 140 and a drain connection 150 of the organic field effect transistor 40 and also an antenna connection conductor 160.
  • the antenna connection conductor 160 serves to connect the outer antenna connection 90 to the polymer chip 30; For the electrical connection, use is made of the connecting contacts 120 and an auxiliary pad 85. With the antenna connection conductor 160, an electrical connection of the outer antenna connection 90 to the organic field effect transistor 40 and thus to the polymer chip 30 is thus possible.
  • the inner antenna connection 80 of the antenna 20 is also connected to the polymer chip 30; however, this connection is not visible in the cross-sectional plane according to FIG. 2.
  • an organic semiconductor layer 170 is arranged on the contact layer 130, which connects the source connection 140 and the drain connection 150 of the organic field effect transistor 40 to one another. The control of the organic
  • Field-effect transistor 40 takes place by applying a control voltage to gate connection 70 of organic field-effect transistor 40, as a result of which a current flow from source connection 140 to drain connection 150 (or vice versa) of organic field-effect transistor 40 is influenced.
  • the antenna 20 has a multiplicity of antenna windings 100, which are arranged spirally in one surface and have a type
  • the antenna 20 is designed for the standard frequencies of 125 kHz and 13.56 MHz that are common today for RF-ID transponder applications. Instead, the antenna 20 can also be optimized for other frequencies.
  • the antenna windings 100 and the antenna connections 80 and 90 - and thus the gate layer 60 - can consist of metal such as aluminum or copper; alternatively, the use of highly conductive polymers is also conceivable.
  • the design of the antenna or the coil 20 depends on the desired resonance frequency and on the electrical power required by the polymer chip 30 or by the organic field effect transistors 40:
  • the resonance frequency of the antenna is determined by the number of turns 100 of the antenna 20.
  • the power consumption of the antenna 20 is essentially determined by the antenna area through which the alternating electromagnetic field can flow; this means that the larger the antenna area of the antenna, the more electromagnetic energy can be absorbed by the antenna 20. It can also be seen in FIG. 2 that the antenna connection conductor 160 is separated from the antenna windings 100 by the insulation layer 110; this means that the antenna connection conductor 160 cannot cause a short circuit between the antenna windings 100.
  • Additional capacitances are formed at the crossing points between the antenna windings 100 and the antenna connecting conductor 160 due to the relatively thin layer thickness of the insulation layer 110 (layer thickness between 50 nm and 500 nm). Because of these additional capacitances, the antenna 20 of the transponder 10 requires fewer antenna windings 100 in order to achieve the desired resonance frequency or operating frequency of the transponder 10 than would be the case if the antenna connection conductor 160 were led to the polymer chip 30 on the back of the substrate 50 , Because of the additional capacitances caused by the thin insulation layer 110, an optimal antenna design with a minimum number is therefore available
  • Antenna windings 100 reached.
  • the gate layer 60 is applied to the substrate layer 50.
  • Metals such as copper, aluminum, titanium, nickel, chromium, gold, silver, palladium and / or platinum as well as conductive polymers such as PEDOT-PSS-Baytron P ® or polyaniline come in as material for the gate layer;
  • the application of the gate layer 60 can. thereby using classic pressure or vapor deposition processes.
  • the antenna 20 with its antenna windings 100 can be manufactured in exactly the same way as the gate connections 70 of the organic field effect transistors 40.
  • the gate connections 70 can be defined on a pad which is deposited simultaneously with the antenna structure (in the size of the later polymer chip 30) and can be worked out by wet chemistry (eg by etching).
  • wet chemistry eg by etching
  • the insulation layer 110 can be, for example, a poly-4-venylphenol layer.
  • the insulation layer 110 can be deposited, for example, by means of a pressure coating or spray coating technique.
  • the openings required for the connection contacts 120 in the insulation layer 110 can either be defined directly by the printing process or can be subsequently introduced into this layer after the insulation layer 110 has been deposited over the entire surface.
  • the insulation layer 110 deposited in this way firstly provides the dielectric layer for the organic field effect transistor 40 and thus for the polymer chip 30; on the other hand, the insulation layer 110 serves as electrical insulation between the antenna windings 100.
  • the insulation layer 100 also serves as a protective coating for any corrosion-prone
  • Antenna materials such as copper or aluminum and increases their long-term stability or service life.
  • the contact layer 130 is applied in a further production step. This can in turn be done using adjusted, high-resolution printing techniques (e.g. Baytron P); alternatively, an entire surface deposition (e.g. thermal evaporation of gold) and a subsequent structuring can be carried out.
  • adjusted, high-resolution printing techniques e.g. Baytron P
  • an entire surface deposition e.g. thermal evaporation of gold
  • a subsequent structuring can be carried out.
  • the deposited contact materials fill the previously opened contact holes in the insulation layer 110 and thus form the connection contacts 120 between the gate layer 60 and the contact layer 130.
  • the structured contact layer 130 forms the source contacts 140 and the drain contacts 150 of the organic field effect transistors 40 of the polymer chip 30 and the antenna connection conductor 160 for the antenna 20, which serves as a back contact conductor between the outer antenna connection 90 and the polymer chip 30.
  • the antenna connection conductor 160 as the back contact conductor thus connects the outer antenna connection 90 of the antenna 20 to the polymer chip 30.
  • the transponder 10 is completed by the
  • the organic semiconductor layer 170 can optionally also be structured in order to reduce leakage currents between the individual organic field-effect transistors 40.
  • Bottom gate structure (gate dielectric source / drain), in which the gate layer 60 forming the antenna windings 100 and the gate connections 70 is deposited on the substrate layer 50 as the first electrically conductive layer 60.
  • top gate structure source / drain connection dielectric gate
  • this is the number he materials which for the first electrically conductive layer 60, so the antenna windings 100 and the source terminal 140 and drain terminal 150 come into question, ' ⁇ . limited, since good antenna materials such as copper and aluminum are sometimes unsuitable as source / drain materials depending on the organic semiconductor material used.
  • the antenna windings 100 - instead of directly on the substrate layer 50 - can be accommodated in the gate layer 60 in the top gate structure and in the context of the last one
  • Process step are separated; Compatibility problems with the organic semiconductor material 170 can thus be reduced or completely eliminated.
  • FIG. 3 shows a transponder 10 with a polymer chip 30 and an antenna 20, the antenna windings 100 of which are "double-wound".
  • Such a design of the Antenna windings is an alternative to an exclusively spiral shape of the antenna windings.
  • the advantage of the "double-wound" antenna windings is, among other things, that both antenna connection conductors are on the inside and therefore no separate or additional "antenna back contact conductor" 160 is required.
  • a polyethylene terephthalate (PET) layer serves as the substrate layer.
  • the gate layer which forms the gate connections of the organic field effect transistors and the antenna windings, is made of copper. Since the gate connections have very filigree structures, they are formed by means of photolithography and wet etching with ammonium peroxodisulfate. A relatively large copper pad is therefore first deposited for the gate connections, which is then “finely” structured to produce the gate connections. Since the antenna windings have very coarse structures in comparison to the gate connections, the antenna windings can already be formed when the copper layer is deposited - that is to say by structured deposition.
  • Transponder according to Figure 3 poly-4-Venylphenol used, which is thermally crosslinked.
  • the layer thickness is 270 nm and the dielectric constant is 3.6.
  • the opening holes in the insulation layer for the connection contacts are formed by photolithography and subsequent dry etching.
  • the contact layer or the source connections and the drain connections consist of a gold layer applied by thermal evaporation with a thickness of 40 nm.
  • This gold layer is produced in the course of a photolithography step and a subsequent wet etching step structured with an I 2 / Kl solution in order to achieve an electrical separation of the source and drain contacts.
  • a pentacene layer with a layer thickness of 30 nm has been thermally vapor-deposited as an organic semiconductor material.

Abstract

L'invention concerne un transpondeur comportant une antenne et un circuit de transpondeur connecté à l'antenne. L'invention vise à mettre en oeuvre un transpondeur de fabrication particulièrement simple et économique. A cet effet, le circuit de transpondeur (30) est constitué de couches structurées (60, 110, 130) disposées sur un substrat (50), dont au moins une couche (60) constitue au moins partiellement l'antenne (20).
PCT/DE2004/000725 2003-04-11 2004-03-31 Transpondeur et procede de fabrication WO2004093002A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10317731A DE10317731A1 (de) 2003-04-11 2003-04-11 Transponder und Verfahren zu dessen Herstellung
DE10317731.0 2003-04-11

Publications (1)

Publication Number Publication Date
WO2004093002A1 true WO2004093002A1 (fr) 2004-10-28

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Application Number Title Priority Date Filing Date
PCT/DE2004/000725 WO2004093002A1 (fr) 2003-04-11 2004-03-31 Transpondeur et procede de fabrication

Country Status (2)

Country Link
DE (1) DE10317731A1 (fr)
WO (1) WO2004093002A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1708306A1 (fr) * 2005-03-28 2006-10-04 Starkey Laboratories, Inc. Antennes pour prothèses auditives
WO2006109229A1 (fr) * 2005-04-15 2006-10-19 Koninklijke Philips Electronics N.V. Antenne pour capter des signaux a resonance magnetique fournie avec sa propre unite de communication
WO2006111400A2 (fr) * 2005-04-22 2006-10-26 Steiner Gmbh & Co. Kg Procede et dispositif pour produire des composants electroniques
WO2009030727A1 (fr) * 2007-09-06 2009-03-12 Siemens Aktiengesellschaft Composant électronique avec organe de réception et de commande, notamment contact de commande sans fil
WO2010060755A1 (fr) * 2008-11-03 2010-06-03 Ksw Microtec Ag Procédé de fabrication d’un produit de transpondeur rfid et produit de transpondeur fabriqué selon le procédé
US8494197B2 (en) 2008-12-19 2013-07-23 Starkey Laboratories, Inc. Antennas for custom fit hearing assistance devices
US8565457B2 (en) 2008-12-19 2013-10-22 Starkey Laboratories, Inc. Antennas for standard fit hearing assistance devices
US8699733B2 (en) 2008-12-19 2014-04-15 Starkey Laboratories, Inc. Parallel antennas for standard fit hearing assistance devices
US8737658B2 (en) 2008-12-19 2014-05-27 Starkey Laboratories, Inc. Three dimensional substrate for hearing assistance devices
US10142747B2 (en) 2008-12-19 2018-11-27 Starkey Laboratories, Inc. Three dimensional substrate for hearing assistance devices

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US6133835A (en) * 1997-12-05 2000-10-17 U.S. Philips Corporation Identification transponder
EP1134694A1 (fr) * 2000-03-16 2001-09-19 Infineon Technologies AG Document avec circuit électronique intégré
DE10116876A1 (de) * 2001-04-04 2002-10-17 Infineon Technologies Ag Selbstjustierte Kontaktdotierung für organische Feldeffekttransistoren
US20030042572A1 (en) * 2000-02-14 2003-03-06 Detcheverry Celine Juliette Transponder and appliance

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US6133835A (en) * 1997-12-05 2000-10-17 U.S. Philips Corporation Identification transponder
US20030042572A1 (en) * 2000-02-14 2003-03-06 Detcheverry Celine Juliette Transponder and appliance
EP1134694A1 (fr) * 2000-03-16 2001-09-19 Infineon Technologies AG Document avec circuit électronique intégré
DE10116876A1 (de) * 2001-04-04 2002-10-17 Infineon Technologies Ag Selbstjustierte Kontaktdotierung für organische Feldeffekttransistoren

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7593538B2 (en) 2005-03-28 2009-09-22 Starkey Laboratories, Inc. Antennas for hearing aids
EP1708306A1 (fr) * 2005-03-28 2006-10-04 Starkey Laboratories, Inc. Antennes pour prothèses auditives
US10194253B2 (en) 2005-03-28 2019-01-29 Starkey Laboratories, Inc. Antennas for hearing aids
US8180080B2 (en) 2005-03-28 2012-05-15 Starkey Laboratories, Inc. Antennas for hearing aids
US9451371B2 (en) 2005-03-28 2016-09-20 Starkey Laboratories, Inc. Antennas for hearing aids
US7667463B2 (en) 2005-04-15 2010-02-23 Koninklijke Philips Electronics N.V. Antenna for picking up magnetic resonance signals and provided with its own communication unit
WO2006109229A1 (fr) * 2005-04-15 2006-10-19 Koninklijke Philips Electronics N.V. Antenne pour capter des signaux a resonance magnetique fournie avec sa propre unite de communication
US7767591B2 (en) * 2005-04-22 2010-08-03 Steiner Gmbh & Co. Kg Method and device for producing electronic components
WO2006111400A3 (fr) * 2005-04-22 2007-04-19 Steiner Gmbh & Co Kg Procede et dispositif pour produire des composants electroniques
WO2006111400A2 (fr) * 2005-04-22 2006-10-26 Steiner Gmbh & Co. Kg Procede et dispositif pour produire des composants electroniques
WO2009030727A1 (fr) * 2007-09-06 2009-03-12 Siemens Aktiengesellschaft Composant électronique avec organe de réception et de commande, notamment contact de commande sans fil
WO2010060755A1 (fr) * 2008-11-03 2010-06-03 Ksw Microtec Ag Procédé de fabrication d’un produit de transpondeur rfid et produit de transpondeur fabriqué selon le procédé
US8408473B2 (en) 2008-11-03 2013-04-02 Smartrac Technology Dresden Gmbh Method for producing an RFID transponder product, and RFID transponder product produced using the method
US8565457B2 (en) 2008-12-19 2013-10-22 Starkey Laboratories, Inc. Antennas for standard fit hearing assistance devices
US8737658B2 (en) 2008-12-19 2014-05-27 Starkey Laboratories, Inc. Three dimensional substrate for hearing assistance devices
US9167360B2 (en) 2008-12-19 2015-10-20 Starkey Laboratories, Inc. Antennas for custom fit hearing assistance devices
US9179227B2 (en) 2008-12-19 2015-11-03 Starkey Laboratories, Inc. Antennas for standard fit hearing assistance devices
US9264826B2 (en) 2008-12-19 2016-02-16 Starkey Laboratories, Inc. Three dimensional substrate for hearing assistance devices
US9294850B2 (en) 2008-12-19 2016-03-22 Starkey Laboratories, Inc. Parallel antennas for standard fit hearing assistance devices
US8699733B2 (en) 2008-12-19 2014-04-15 Starkey Laboratories, Inc. Parallel antennas for standard fit hearing assistance devices
US9602934B2 (en) 2008-12-19 2017-03-21 Starkey Laboratories, Inc. Antennas for standard fit hearing assistance devices
US9743199B2 (en) 2008-12-19 2017-08-22 Starkey Laboratories, Inc. Parallel antennas for standard fit hearing assistance devices
US10142747B2 (en) 2008-12-19 2018-11-27 Starkey Laboratories, Inc. Three dimensional substrate for hearing assistance devices
US8494197B2 (en) 2008-12-19 2013-07-23 Starkey Laboratories, Inc. Antennas for custom fit hearing assistance devices
US10425748B2 (en) 2008-12-19 2019-09-24 Starkey Laboratories, Inc. Antennas for standard fit hearing assistance devices
US10966035B2 (en) 2008-12-19 2021-03-30 Starkey Laboratories, Inc. Antennas for standard fit hearing assistance devices

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