WO2004061397A1 - Erhöhung der resistenz von kristallen gegen ,,optical damage' - Google Patents
Erhöhung der resistenz von kristallen gegen ,,optical damage' Download PDFInfo
- Publication number
- WO2004061397A1 WO2004061397A1 PCT/DE2003/004191 DE0304191W WO2004061397A1 WO 2004061397 A1 WO2004061397 A1 WO 2004061397A1 DE 0304191 W DE0304191 W DE 0304191W WO 2004061397 A1 WO2004061397 A1 WO 2004061397A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- crystal
- crystals
- light
- dark conductivity
- concentration
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/3525—Optical damage
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
Definitions
- the present invention relates to a method for the desensitization of a crystal with nonlinear optical properties, in particular a lithium niobate or lithium tantalate crystal, against taking damage under intense exposure to light (“optical damage”), the damage being caused by light-induced changes in the refractive indices.
- lithium niobate The most important intrinsic, charge-transporting defects in lithium niobate form misplaced niobium ions in the crystal lattice that are installed at a lithium site. For thermodynamic reasons, these defects are always found in a certain concentration in congruently melting lithium niobate. Light can be used to detach electrons from these impurities and redistribute them in the material, resulting in optical damage from space charge fields.
- the iron defects and the misplaced niobium ions are energetically located in the band gap of the crystal. In relation to the conduction band, iron is lower in energy, whereas misplaced niobium is flatter. This scheme is also referred to as the "two-center model". By irradiating intense light, electrons can be excited from the impurities into the conduction band, where they can be captured again by other impurities after wandering around. On the other hand, charge carriers can also be transferred directly from from one type of fault to the other without having to make a detour via the conduction band.
- PPLN periodically polarized lithium niobate
- Stoichiometric lithium niobate can also be used to reduce the damage. This is understood to mean a crystal composition which, based on the total number of lithium and niobium ions, contains about 50% lithium ions. Commercial, so-called “congruent melting” material, on the other hand, only contains 48.4% lithium. Stoichiometric lithium niobate is characterized by a sharp increase in photoconductivity. This short-circuits the light-induced space charge fields and reduces the optical damage. As in the case of the magnesium-doped material, there is also the problem with stoichiometric crystals is that the material cannot be produced reproducibly, which prevents the commercial use of such crystals.
- a further possibility is to use integrated optical waveguides, in which the increase in the refractive index necessary for light guidance is achieved by chemical proton exchange (APE - “annealed proton exchange”).
- APE chemical proton exchange
- these show a greatly reduced optical damage.
- This effect is interpreted as follows: The protons present in the material become the Attributed to change the degree of reduction [Fe 2+ ] / [Fe 3+ ] of the existing residual contamination of iron. If there are many protons in the material, this should result in Fe 2+ being transferred to Fe 3+ . This greatly reduces the susceptibility of the material to optical damage. Titanium-diffused waveguides in lithium niobate show exactly the opposite effect. It is speculated here that the diffused titanium causes Fe 3+ to be converted into Fe 2+ . Indeed, titanium-diffused waveguides are much more sensitive to optical damage.
- the object of the present invention is now to provide a method which can be implemented inexpensively with simple means and with which crystals with nonlinear optical properties, in particular lithium niobate or lithium tantalate, can be efficiently desensitized to optical damage.
- the general idea of the invention is to reduce the susceptibility of the crystals to optical damage in that the dark conductivity of the
- a targeted increase in dark conductivity can be done according to the invention in various ways:
- the proton concentration of the material can be increased. It is known, for example, that the dark conductivity of undoped and weakly iron-doped lithium niobate crystals is dominated by mobile protons. The protonic conductivity increases exponentially with temperature. An activation energy of 1.1 eV was found for the process from temperature-dependent measurements.
- the high dark conductivity of the protons is used, for example, in the method of thermal fixing, with which quasi-permanent holograms can be generated in lithium niobate.
- the material is heated to temperatures of around 180 ° C during or after lighting, which extremely increases the mobility of the protons in the material.
- the protons then move through drift in the space charge field created by light radiation and compensate for it due to their charge. This means that no or only slight diffraction efficiencies of written holograms can be detected during the fixing process.
- the proton concentration in previously known material is determined by the growth process of the crystals and is therefore specified by the manufacturer. Measurements show that the proton concentration is a maximum of about 2.5 x 10 24 m "3 (see table).
- the table shows the measured proton concentrations of congruently melting, undoped lithium niobate crystals. It turns out that the proton concentrations of commercially available crystals from different manufacturers are not It can therefore be deduced from this that commercially available, congruently melting lithium niobate crystals have a proton concentration of at most 2.5 x 10 24 m '3 .
- the protonic conductivity is increased in that the concentration of the protons in the material is specifically increased by a suitable pretreatment.
- the dark conductivity ⁇ 0 can be written as
- the proton concentration of lithium niobate crystals is determined by evaluating absorption measurements. For this purpose, the OH " stretching vibration at 2870 nm is detected with properly polarized light. The height of this absorption band is proportional to the proton concentration of the material and is described by:
- 2mnm is the absorption coefficient at the specified wavelength.
- the proton concentration is increased by a significant amount, an increase of over 50% being regarded as a significant increase.
- This also increases the dark conductivity of the material.
- the strength of the light-induced space charge field decreases, while the resistance of the material to optical damage increases.
- the proton concentration of commercially available lithium niobate crystals can be permanently increased by tempering processes or by chemical processes.
- the methods used here are heating the crystals in a proton-rich atmosphere at high temperatures around 1000 ° C. and / or with an applied electrical field and / or under high pressure.
- a chemical proton exchange lithium ions are replaced by protons.
- the proton concentration can be increased significantly above the level of commercially available crystals, which is a maximum of approximately 2.5 x 10 24 m "3. With the methods described, a proton concentration of greater than 4 x 10 24 m " 3 is achieved.
- the dark conductivity is achieved by a significant increase in the deuteron concentration beyond the standard level. Exceeding a value of 1x10 24 m "3 is considered significant.
- a deuteronic dark conductivity is used instead of the protonic one. Both types of doping mentioned can be carried out by heating the crystal in a correspondingly enriched atmosphere and / or by exposing it to increased pressure and / or an electric field.
- the dark conductivity can be increased as it were by increasing the iron concentration of the material.
- Highly iron-doped lithium niobate crystals show a dark conductivity that is no longer dominated by protons. Instead, the dark line is now electronic: Thermal excitation can detach electrons from Fe 2+ centers and capture them from Fe 3+ centers again. A light-induced space charge field is quickly deleted.
- the invention is based on doping the material with iron to such an extent that the electronic dark conductivity is significantly increased. This in turn leads to a short-circuiting of the light-induced space charge fields and thus increases the resistance to optical damage.
- an increased dark conductivity can be achieved in that the material is not doped with iron, but with other extrinsic ions, the total concentration of which corresponds to the value of residual impurities commercially available, undoped lithium niobate crystals significantly exceeds. Exceeding a value of 2 x 10 24 m "3 is considered significant.
- the invention represents a new method of reducing the optical damage in bulk crystals and thus making the material attractive for a larger area of application.
- the dark conductivity of the material is greatly increased by doping the crystals with large amounts of protons, deuterons or iron ions. Additional heating of the material enhances the effect.
- the process leads to short-circuiting of the light-induced space charge fields and thus to a reduction in the photorefractive effect. As a consequence, the crystal becomes resistant to optical damage.
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/541,480 US20060291519A1 (en) | 2003-01-04 | 2003-12-19 | Increasing the resistance of crystals to optical damage |
EP03785588A EP1583939A1 (de) | 2003-01-04 | 2003-12-19 | Erhöhung der resistenz von kristallen gegen ,,optical damage" |
JP2004564165A JP2006512610A (ja) | 2003-01-04 | 2003-12-19 | 「光損傷」に対する結晶の耐性の向上 |
AU2003294662A AU2003294662B2 (en) | 2003-01-04 | 2003-12-19 | Increasing of resistance of crystals to optical damage |
CA002508828A CA2508828A1 (en) | 2003-01-04 | 2003-12-19 | Increasing the resistance of crystals to "optical damage" |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10300080.1 | 2003-01-04 | ||
DE10300080A DE10300080A1 (de) | 2003-01-04 | 2003-01-04 | Erhöhung der Resistenz von Kristallen gegen "Optical Damage" |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004061397A1 true WO2004061397A1 (de) | 2004-07-22 |
Family
ID=32519608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2003/004191 WO2004061397A1 (de) | 2003-01-04 | 2003-12-19 | Erhöhung der resistenz von kristallen gegen ,,optical damage' |
Country Status (9)
Country | Link |
---|---|
US (1) | US20060291519A1 (de) |
EP (1) | EP1583939A1 (de) |
JP (1) | JP2006512610A (de) |
CN (1) | CN100387936C (de) |
AU (1) | AU2003294662B2 (de) |
CA (1) | CA2508828A1 (de) |
DE (1) | DE10300080A1 (de) |
PL (1) | PL378217A1 (de) |
WO (1) | WO2004061397A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004002109A1 (de) | 2004-01-14 | 2005-08-11 | Deutsche Telekom Ag | Behandlung von Kristallen zur Vermeidung lichtinduzierter Änderungen des Brechungsindex |
JP4532378B2 (ja) * | 2005-09-28 | 2010-08-25 | アドバンスド・マスク・インスペクション・テクノロジー株式会社 | レーザ光源運用方法 |
DE102007004400A1 (de) * | 2007-01-30 | 2008-07-31 | Deutsche Telekom Ag | Optische Reinigung nichtlinear-optischer Kristalle |
CN103334156B (zh) * | 2013-07-12 | 2016-03-23 | 东南大学 | 一种光学晶体掺杂方法 |
RU2614199C1 (ru) * | 2015-12-16 | 2017-03-23 | ФЕДЕРАЛЬНОЕ ГОСУДАРСТВЕННОЕ БЮДЖЕТНОЕ ОБРАЗОВАТЕЛЬНОЕ УЧРЕЖДЕНИЕ ВЫСШЕГО ОБРАЗОВАНИЯ "КУБАНСКИЙ ГОСУДАРСТВЕННЫЙ УНИВЕРСИТЕТ" (ФГБОУ ВО "Кубанский государственный университет") | Градиентный периодически поляризованный ниобат лития |
CN110670134B (zh) * | 2019-09-20 | 2021-04-23 | 南开大学 | 一种p型和n型导电铌酸锂纳米线的制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05105594A (ja) * | 1991-10-16 | 1993-04-27 | Hitachi Metals Ltd | タンタル酸リチウム単結晶の製造方法および光素子 |
JPH05105593A (ja) * | 1991-10-22 | 1993-04-27 | Hitachi Metals Ltd | タンタル酸リチウム単結晶、および光素子 |
JPH05105590A (ja) * | 1991-10-22 | 1993-04-27 | Hitachi Metals Ltd | ニオブ酸リチウム単結晶および光素子 |
JPH05270992A (ja) * | 1992-03-24 | 1993-10-19 | Daiso Co Ltd | 光損傷のないニオブ酸リチウム単結晶 |
EP0824217A2 (de) * | 1996-08-13 | 1998-02-18 | Nippon Telegraph And Telephone Corporation | Optische Materialien |
US20020088966A1 (en) * | 1997-03-18 | 2002-07-11 | Stoll Harold M. | Process for oxidizing iron-doped lithium niobate |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2931960B2 (ja) * | 1996-07-30 | 1999-08-09 | 科学技術庁無機材質研究所長 | 鉄添加ニオブ酸リチウム単結晶およびその熱処理方法および当該単結晶を含むホログラム応用素子 |
US5902519A (en) * | 1997-03-18 | 1999-05-11 | Northrop Grumman Corproation | Process for oxidizing iron-doped lithium niobate |
US6786967B1 (en) * | 1998-05-11 | 2004-09-07 | California Institute Of Technology | Ion exchange waveguides and methods of fabrication |
US6468699B2 (en) * | 1999-05-14 | 2002-10-22 | Adil Lahrichi | Reversible hologram fixation in photorefractive materials using incoherent ultraviolet light |
GB2353091A (en) * | 1999-08-11 | 2001-02-14 | Secr Defence | Object comparator using a reference generated refractive index grating |
WO2004092583A1 (ja) * | 2003-04-17 | 2004-10-28 | Zexel Valeo Climate Control Corporation | 斜板式圧縮機 |
-
2003
- 2003-01-04 DE DE10300080A patent/DE10300080A1/de not_active Withdrawn
- 2003-12-19 CN CNB2003801068853A patent/CN100387936C/zh not_active Expired - Fee Related
- 2003-12-19 JP JP2004564165A patent/JP2006512610A/ja active Pending
- 2003-12-19 AU AU2003294662A patent/AU2003294662B2/en not_active Ceased
- 2003-12-19 PL PL378217A patent/PL378217A1/pl not_active Application Discontinuation
- 2003-12-19 CA CA002508828A patent/CA2508828A1/en not_active Abandoned
- 2003-12-19 EP EP03785588A patent/EP1583939A1/de not_active Withdrawn
- 2003-12-19 WO PCT/DE2003/004191 patent/WO2004061397A1/de active Application Filing
- 2003-12-19 US US10/541,480 patent/US20060291519A1/en not_active Abandoned
Patent Citations (6)
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JPH05105594A (ja) * | 1991-10-16 | 1993-04-27 | Hitachi Metals Ltd | タンタル酸リチウム単結晶の製造方法および光素子 |
JPH05105593A (ja) * | 1991-10-22 | 1993-04-27 | Hitachi Metals Ltd | タンタル酸リチウム単結晶、および光素子 |
JPH05105590A (ja) * | 1991-10-22 | 1993-04-27 | Hitachi Metals Ltd | ニオブ酸リチウム単結晶および光素子 |
JPH05270992A (ja) * | 1992-03-24 | 1993-10-19 | Daiso Co Ltd | 光損傷のないニオブ酸リチウム単結晶 |
EP0824217A2 (de) * | 1996-08-13 | 1998-02-18 | Nippon Telegraph And Telephone Corporation | Optische Materialien |
US20020088966A1 (en) * | 1997-03-18 | 2002-07-11 | Stoll Harold M. | Process for oxidizing iron-doped lithium niobate |
Non-Patent Citations (6)
Title |
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BUSE K ET AL: "Development of thermally fixed holograms in photorefractive lithium-niobate crystals without light", OPTICAL MATERIALS, ELSEVIER SCIENCE PUBLISHERS B.V. AMSTERDAM, NL, vol. 18, no. 1, October 2001 (2001-10-01), pages 17 - 18, XP004321030, ISSN: 0925-3467 * |
GALAMBOS L ET AL: "Doubly doped stoichiometric and congruent lithium niobate for holographic data storage", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 229, no. 1-4, July 2001 (2001-07-01), pages 228 - 232, XP004251062, ISSN: 0022-0248 * |
KAMBER N Y ET AL: "Threshold effect of incident light intensity for the resistance against the photorefractive light-induced scattering in doped lithium niobate crystals", OPTICS COMMUNICATIONS, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 176, no. 1-3, March 2000 (2000-03-01), pages 91 - 96, XP004191573, ISSN: 0030-4018 * |
PATENT ABSTRACTS OF JAPAN vol. 0174, no. 52 (C - 1099) 19 August 1993 (1993-08-19) * |
PATENT ABSTRACTS OF JAPAN vol. 0180, no. 46 (C - 1157) 25 January 1994 (1994-01-25) * |
ZHANG Y ET AL: "Growth and properties of Zn doped lithium niobate crystal", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING, AMSTERDAM, NL, vol. 233, no. 3, December 2001 (2001-12-01), pages 537 - 540, XP004305554, ISSN: 0022-0248 * |
Also Published As
Publication number | Publication date |
---|---|
DE10300080A1 (de) | 2004-07-22 |
PL378217A1 (pl) | 2006-03-20 |
JP2006512610A (ja) | 2006-04-13 |
CA2508828A1 (en) | 2004-07-22 |
AU2003294662B2 (en) | 2008-05-29 |
CN100387936C (zh) | 2008-05-14 |
AU2003294662A1 (en) | 2004-07-29 |
US20060291519A1 (en) | 2006-12-28 |
CN1729383A (zh) | 2006-02-01 |
EP1583939A1 (de) | 2005-10-12 |
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