WO2004055922A3 - Procede de fabrication de transistors a effet de champ organiques a architecture de contact superieur a partir de polymeres conducteurs - Google Patents

Procede de fabrication de transistors a effet de champ organiques a architecture de contact superieur a partir de polymeres conducteurs Download PDF

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Publication number
WO2004055922A3
WO2004055922A3 PCT/DE2003/003936 DE0303936W WO2004055922A3 WO 2004055922 A3 WO2004055922 A3 WO 2004055922A3 DE 0303936 W DE0303936 W DE 0303936W WO 2004055922 A3 WO2004055922 A3 WO 2004055922A3
Authority
WO
WIPO (PCT)
Prior art keywords
field effect
effect transistors
top contact
production
organic field
Prior art date
Application number
PCT/DE2003/003936
Other languages
German (de)
English (en)
Other versions
WO2004055922A2 (fr
Inventor
Marcus Halik
Hagen Klauk
Ute Zschieschang
Guenter Schmid
Original Assignee
Infineon Technologies Ag
Marcus Halik
Hagen Klauk
Ute Zschieschang
Guenter Schmid
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Marcus Halik, Hagen Klauk, Ute Zschieschang, Guenter Schmid filed Critical Infineon Technologies Ag
Priority to DE10394118T priority Critical patent/DE10394118D2/de
Priority to AU2003289814A priority patent/AU2003289814A1/en
Publication of WO2004055922A2 publication Critical patent/WO2004055922A2/fr
Publication of WO2004055922A3 publication Critical patent/WO2004055922A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

L'utilisation d'une solution aqueuse contenant un polymère conducteur permet de fabriquer des transistors à effet de champ organiques sur la base des propriétés d'interface opposées d'une solution polymère hydrophile et d'un semi-conducteur organique hydrophobe. Lesdits transistors peuvent être fabriqués avec une architecture de contact supérieur, les propriétés électriques du semi-conducteur organique étant intégralement maintenues.
PCT/DE2003/003936 2002-11-29 2003-11-28 Procede de fabrication de transistors a effet de champ organiques a architecture de contact superieur a partir de polymeres conducteurs WO2004055922A2 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE10394118T DE10394118D2 (de) 2002-11-29 2003-11-28 Verfahren zur Herstellung von organischen Feldeffekttransistoren mit Top-Kontakt-Architektur aus leitfähigen Polymeren
AU2003289814A AU2003289814A1 (en) 2002-11-29 2003-11-28 Method for the production of organic field effect transistors with a top contact architecture made of conductive polymers

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10255870.1 2002-11-29
DE10255870A DE10255870A1 (de) 2002-11-29 2002-11-29 Verfahren zur Herstellung von organischen Feldeffektransistoren mit Top-Kontakt-Architektur aus leitfähigen Polymeren

Publications (2)

Publication Number Publication Date
WO2004055922A2 WO2004055922A2 (fr) 2004-07-01
WO2004055922A3 true WO2004055922A3 (fr) 2004-09-30

Family

ID=32318829

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/003936 WO2004055922A2 (fr) 2002-11-29 2003-11-28 Procede de fabrication de transistors a effet de champ organiques a architecture de contact superieur a partir de polymeres conducteurs

Country Status (3)

Country Link
AU (1) AU2003289814A1 (fr)
DE (2) DE10255870A1 (fr)
WO (1) WO2004055922A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1670079B1 (fr) * 2004-12-08 2010-12-01 Samsung Mobile Display Co., Ltd. Méthode de fabrication d'un motif conductif d'une structure conductrice d'un transistor à couche mince
KR100647695B1 (ko) 2005-05-27 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 그의 제조방법과 이를 구비한평판표시장치
DE102005035696A1 (de) * 2005-07-27 2007-02-15 Thüringisches Institut für Textil- und Kunststoff-Forschung e.V. Verfahren zur Herstellung organischer Feldeffekttransistoren und darauf basierender Schaltungen auf Lösungsmittel- und temperaturempfindlichen Kunststoffoberflächen und organische Feldeffekttransistoren und organische optoelektronische Bauelemente nach diesem Verfahren

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19851703A1 (de) * 1998-10-30 2000-05-04 Inst Halbleiterphysik Gmbh Verfahren zur Herstellung von elektronischen Strukturen
US6696370B2 (en) * 2000-06-16 2004-02-24 The Penn State Research Foundation Aqueous-based photolithography on organic materials
GB2373095A (en) * 2001-03-09 2002-09-11 Seiko Epson Corp Patterning substrates with evaporation residues
DE10116876B4 (de) * 2001-04-04 2004-09-23 Infineon Technologies Ag Verfahren zur Dotierung elektrisch leitfähiger organischer Verbindungen, organischer Feldeffekttransistor sowie Verfahren zu dessen Herstellung

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
KAWASE T ET AL: "All-polymer thin film transistors fabricated by high-resolution ink-jet printing", INTERNATIONAL ELECTRON DEVICES MEETING 2000. IEDM. TECHNICAL DIGEST. SAN FRANCISCO, CA, DEC. 10 - 13, 2000, NEW YORK, NY : IEEE, US, 10 December 2000 (2000-12-10), pages 623 - 626, XP002234841, ISBN: 0-7803-6439-2 *
LEE B ET AL: "Preparation, structure evolution and dielectric properties of BaTiO3 thin films and powders by an aqueous sol-gel process", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 388, no. 1-2, 1 June 2001 (2001-06-01), pages 107 - 113, XP004234756, ISSN: 0040-6090 *
LING Y ET AL: "Preparation and properties of conductive LaNiO3 thin films by a thermal decomposition of water-based solutions", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 311, no. 1-2, 31 December 1997 (1997-12-31), pages 128 - 132, XP004121331, ISSN: 0040-6090 *

Also Published As

Publication number Publication date
AU2003289814A8 (en) 2004-07-09
WO2004055922A2 (fr) 2004-07-01
DE10255870A1 (de) 2004-06-17
DE10394118D2 (de) 2005-10-20
AU2003289814A1 (en) 2004-07-09

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