AU2003289814A1 - Method for the production of organic field effect transistors with a top contact architecture made of conductive polymers - Google Patents

Method for the production of organic field effect transistors with a top contact architecture made of conductive polymers

Info

Publication number
AU2003289814A1
AU2003289814A1 AU2003289814A AU2003289814A AU2003289814A1 AU 2003289814 A1 AU2003289814 A1 AU 2003289814A1 AU 2003289814 A AU2003289814 A AU 2003289814A AU 2003289814 A AU2003289814 A AU 2003289814A AU 2003289814 A1 AU2003289814 A1 AU 2003289814A1
Authority
AU
Australia
Prior art keywords
production
field effect
effect transistors
conductive polymers
top contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003289814A
Other languages
English (en)
Other versions
AU2003289814A8 (en
Inventor
Marcus Halik
Hagen Klauk
Gunter Schmid
Ute Zschieschang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of AU2003289814A1 publication Critical patent/AU2003289814A1/en
Publication of AU2003289814A8 publication Critical patent/AU2003289814A8/xx
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60Forming conductive regions or layers, e.g. electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/468Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10Organic polymers or oligomers
    • H10K85/111Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60Organic compounds having low molecular weight
    • H10K85/615Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/622Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
AU2003289814A 2002-11-29 2003-11-28 Method for the production of organic field effect transistors with a top contact architecture made of conductive polymers Abandoned AU2003289814A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10255870.1 2002-11-29
DE10255870A DE10255870A1 (de) 2002-11-29 2002-11-29 Verfahren zur Herstellung von organischen Feldeffektransistoren mit Top-Kontakt-Architektur aus leitfähigen Polymeren
PCT/DE2003/003936 WO2004055922A2 (fr) 2002-11-29 2003-11-28 Procede de fabrication de transistors a effet de champ organiques a architecture de contact superieur a partir de polymeres conducteurs

Publications (2)

Publication Number Publication Date
AU2003289814A1 true AU2003289814A1 (en) 2004-07-09
AU2003289814A8 AU2003289814A8 (en) 2004-07-09

Family

ID=32318829

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003289814A Abandoned AU2003289814A1 (en) 2002-11-29 2003-11-28 Method for the production of organic field effect transistors with a top contact architecture made of conductive polymers

Country Status (3)

Country Link
AU (1) AU2003289814A1 (fr)
DE (2) DE10255870A1 (fr)
WO (1) WO2004055922A2 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE602005025074D1 (de) 2004-12-08 2011-01-13 Samsung Mobile Display Co Ltd Methode zur Herstellung einer Leiterstruktur eines Dünnfilmtransistors
KR100647695B1 (ko) 2005-05-27 2006-11-23 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 그의 제조방법과 이를 구비한평판표시장치
DE102005035696A1 (de) * 2005-07-27 2007-02-15 Thüringisches Institut für Textil- und Kunststoff-Forschung e.V. Verfahren zur Herstellung organischer Feldeffekttransistoren und darauf basierender Schaltungen auf Lösungsmittel- und temperaturempfindlichen Kunststoffoberflächen und organische Feldeffekttransistoren und organische optoelektronische Bauelemente nach diesem Verfahren

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19851703A1 (de) * 1998-10-30 2000-05-04 Inst Halbleiterphysik Gmbh Verfahren zur Herstellung von elektronischen Strukturen
WO2001097297A1 (fr) * 2000-06-16 2001-12-20 The Penn State Research Foundation Photolithographie aqueuse sur materiaux organiques
GB2373095A (en) * 2001-03-09 2002-09-11 Seiko Epson Corp Patterning substrates with evaporation residues
DE10116876B4 (de) * 2001-04-04 2004-09-23 Infineon Technologies Ag Verfahren zur Dotierung elektrisch leitfähiger organischer Verbindungen, organischer Feldeffekttransistor sowie Verfahren zu dessen Herstellung

Also Published As

Publication number Publication date
DE10394118D2 (de) 2005-10-20
DE10255870A1 (de) 2004-06-17
WO2004055922A3 (fr) 2004-09-30
AU2003289814A8 (en) 2004-07-09
WO2004055922A2 (fr) 2004-07-01

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase