WO2004032228A2 - Substrat comprenant une section superficielle plane, procede de production d'un film de materiau sur la section superficielle du substrat et utilisation de ce substrat - Google Patents

Substrat comprenant une section superficielle plane, procede de production d'un film de materiau sur la section superficielle du substrat et utilisation de ce substrat Download PDF

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Publication number
WO2004032228A2
WO2004032228A2 PCT/EP2003/010809 EP0310809W WO2004032228A2 WO 2004032228 A2 WO2004032228 A2 WO 2004032228A2 EP 0310809 W EP0310809 W EP 0310809W WO 2004032228 A2 WO2004032228 A2 WO 2004032228A2
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WO
WIPO (PCT)
Prior art keywords
substrate
film
liquid
surface section
recess
Prior art date
Application number
PCT/EP2003/010809
Other languages
German (de)
English (en)
Other versions
WO2004032228A3 (fr
Inventor
Wolfgang Rossner
Berit Wessler
Original Assignee
Siemens Aktiengesellschaft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Aktiengesellschaft filed Critical Siemens Aktiengesellschaft
Priority to AU2003271657A priority Critical patent/AU2003271657A1/en
Publication of WO2004032228A2 publication Critical patent/WO2004032228A2/fr
Publication of WO2004032228A3 publication Critical patent/WO2004032228A3/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/508—Containers for the purpose of retaining a material to be analysed, e.g. test tubes rigid containers not provided for above
    • B01L3/5088—Containers for the purpose of retaining a material to be analysed, e.g. test tubes rigid containers not provided for above confining liquids at a location by surface tension, e.g. virtual wells on plates, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/0046—Sequential or parallel reactions, e.g. for the synthesis of polypeptides or polynucleotides; Apparatus and devices for combinatorial chemistry or for making molecular arrays
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
    • B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
    • B01L3/508—Containers for the purpose of retaining a material to be analysed, e.g. test tubes rigid containers not provided for above
    • B01L3/5085—Containers for the purpose of retaining a material to be analysed, e.g. test tubes rigid containers not provided for above for multiple samples, e.g. microtitration plates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00277—Apparatus
    • B01J2219/00351—Means for dispensing and evacuation of reagents
    • B01J2219/00436—Maskless processes
    • B01J2219/00443—Thin film deposition
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00277—Apparatus
    • B01J2219/00497—Features relating to the solid phase supports
    • B01J2219/00527—Sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00583—Features relative to the processes being carried out
    • B01J2219/00603—Making arrays on substantially continuous surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00718—Type of compounds synthesised
    • B01J2219/0072—Organic compounds
    • B01J2219/00722—Nucleotides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00718—Type of compounds synthesised
    • B01J2219/00745—Inorganic compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/00274—Sequential or parallel reactions; Apparatus and devices for combinatorial chemistry or for making arrays; Chemical library technology
    • B01J2219/00718—Type of compounds synthesised
    • B01J2219/00756—Compositions, e.g. coatings, crystals, formulations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
    • B01L2200/12—Specific details about manufacturing devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/06—Auxiliary integrated devices, integrated components
    • B01L2300/069—Absorbents; Gels to retain a fluid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
    • B01L2300/00—Additional constructional details
    • B01L2300/16—Surface properties and coatings
    • C—CHEMISTRY; METALLURGY
    • C40—COMBINATORIAL TECHNOLOGY
    • C40B—COMBINATORIAL CHEMISTRY; LIBRARIES, e.g. CHEMICAL LIBRARIES
    • C40B40/00—Libraries per se, e.g. arrays, mixtures
    • C40B40/04—Libraries containing only organic compounds
    • C40B40/14—Libraries containing macromolecular compounds and not covered by groups C40B40/06 - C40B40/12
    • C—CHEMISTRY; METALLURGY
    • C40—COMBINATORIAL TECHNOLOGY
    • C40B—COMBINATORIAL CHEMISTRY; LIBRARIES, e.g. CHEMICAL LIBRARIES
    • C40B40/00—Libraries per se, e.g. arrays, mixtures
    • C40B40/18—Libraries containing only inorganic compounds or inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C40—COMBINATORIAL TECHNOLOGY
    • C40B—COMBINATORIAL CHEMISTRY; LIBRARIES, e.g. CHEMICAL LIBRARIES
    • C40B60/00—Apparatus specially adapted for use in combinatorial chemistry or with libraries
    • C40B60/14—Apparatus specially adapted for use in combinatorial chemistry or with libraries for creating libraries

Definitions

  • the invention relates to a substrate with at least one flat surface section for forming a liquid film on the surface section.
  • a method for producing a material film with a material on a surface section of the substrate and a use of the substrate are specified.
  • the substrate is a silicon wafer with a substrate diameter of approximately 50.8 mm (two inches).
  • the silicon wafer has two planar main surfaces that face away from one another.
  • One of the main surfaces is coated with a layer sequence of silicon dioxide, titanium and platinum. This main area is divided radially into eight sector areas with the help of approximately 2 mm wide strips.
  • the sector surfaces form flat surface sections of the substrate.
  • a material film made of different ceramic materials is formed on the platinum layer of each of the surface sections.
  • the ceramic materials are lead zirconate titanates (PZT) with different proportions of titanium and zircon.
  • the material films are produced by applying solutions to the surface section (Chemical Solution Deposition, CSD).
  • CSD Chemical Solution Deposition
  • a liquid film is made from an alcoholic solution with several precursors of the lead zirconate titanates on the surface sections educated.
  • a so-called spin coating process is carried out to form the liquid films.
  • a liquid in the form of a sol gel is applied to the surface sections with the preliminary stages of the respective ceramic material.
  • the precursors are lead acetate, zirconium propylate and titanium isopropylate.
  • Sol gels with different proportions of zirconium propylate and titanium isopropylate are applied to the surface sections.
  • the silicon wafer is rotated about a central axis perpendicular to the main surfaces. Excess liquid is thrown outwards from the surface sections. The result is a thin film of liquid on the surface sections.
  • the liquid films are converted into the corresponding material films from the various lead zirconate titanates by joint temperature treatment.
  • the temperature treatment comprises pyrolysis of the precursors at 500 ° C and subsequent calcination at 700 ° C in the presence of oxygen.
  • the result is a material library with eight material films made of lead zirconate titanates of different compositions.
  • the substrate is suitable for use in combinatorial chemistry.
  • the substrate is suitable for use in combinatorial chemistry.
  • Sol gels applied to the surface sections The material films of the material library obtained after the temperature treatment are analyzed with the aid of an analysis robot. For example, the permittivity of the lead zirconate titanates of the material films is to be determined. For this purpose, an electrode made of platinum with an electrode diameter of approximately 0.5 mm is applied to each of the material films produced on the surface sections.
  • the permittivity of the lead zirconate titanates can be determined simply and quickly by automatic electrical control of the electrode layer, the coating of the surface sections and the electrode on the material films. Due to the radial division of the silicon wafer into eight sector areas with the help of relatively wide strips, the space of the silicon wafer is insufficiently used. Only eight chemically different materials can be applied per silicon wafer. In addition, the centrifugal process can produce a liquid film with an uneven thickness and thus also a material film with poor quality.
  • the object of the invention is to show how, in comparison with the known prior art, a substrate can be produced with the aid of liquids with the aid of liquids, significantly more material films of high quality.
  • a substrate with at least one flat surface section for forming a liquid film on the surface section is specified.
  • the substrate is characterized in that at least one recess of the substrate adjoins the flat surface section in such a way that an excess liquid can flow into the recess with regard to the formation of the liquid film.
  • a method for producing a material film with a material on a surface section of a substrate is also specified with the following method steps: a) forming a liquid film with the material and / or with a precursor of the material on the surface section and b) converting of the liquid film with the material and / or with the precursor of the material in the material film.
  • the recess is a depression or a trench on a surface of the substrate.
  • the depression can also be a through hole through the substrate in the thickness direction.
  • the recess in the substrate is designed in such a way that excess liquid flows off automatically. This means that by applying liquid to the Surface section initially forms a continuous (primary) liquid film (as deposited), which captures both the surface section and the adjacent surface of the substrate in the region of the recess. Excess liquid flows off over this continuous liquid film formed by the application of the liquid until this liquid film "tears off” or the flow is otherwise stopped (for example by quickly removing the solvent by applying a vacuum).
  • this liquid film is controlled, for example, by a viscosity of the liquid, by a wettability of the surface section with the liquid and by a wettability of the surface of the substrate in the region of the recess with the liquid.
  • the surface section is polished and the surface of the substrate is roughened in the region of the recess.
  • a capillary force occurs in the region of the recess that the outflow of the liquid from the surface section is favored.
  • Thicknesses of less than 1 ⁇ m in the nm range are even possible.
  • the entire liquid film is very homogeneous in terms of its thickness. The reason for this is the drainage of the liquid.
  • the thickness of the liquid film is almost the same over the entire area of the liquid film.
  • the thin liquid film can be converted into a homogeneous material film with an appropriate film thickness. If the liquid film were not so thin and not so homogeneous, the probability would be relatively high that an inhomogeneous material film is obtained from the liquid film.
  • An inhomogeneous material film is characterized, for example, by a porosity which is distributed unevenly over the film.
  • the outflow follows automatically, while in the spin coating process the outflow is actively influenced by rotating the substrate.
  • the recess can be arranged within the surface section. In particular, however, the recess surrounds the surface section.
  • the recess can be an open ring.
  • the recess is preferably a closed ring. The closed ring makes it possible to apply a liquid to the surface section without the liquid being distributed over large parts of the surface of the substrate. In particular, the liquids that are applied to a plurality of surface sections of the surface of the substrate are prevented from mixing.
  • the ring can have any shape.
  • the ring has a circular, oval and / or polygonal ring shape from the group.
  • the ring shape is square or hexagonal.
  • the recess has a depth selected from the range from 1 ⁇ m up to and including 500 ⁇ m. The depth results from the height difference (along the layer thickness of the substrate) between the surface section of the substrate and the surface of the substrate in the region of the recess. The depth of the recess is selected so that a liquid film can form when the liquid is applied and that the excess liquid can be absorbed in the recess.
  • the recess has a depth selected from the range from 1 ⁇ m up to and including 500 ⁇ m. The depth results from the height difference (along the layer thickness of the substrate) between the surface section of the substrate and the surface of the substrate in the region of the recess.
  • the depth of the recess is selected so that a liquid film can form when the liquid is applied and that the excess liquid can be absorbed in the recess.
  • a recess with a constantly increasing depth is particularly favorable.
  • the depth of the recess increases continuously.
  • a recess with an abruptly changing depth consists, for example, of two rings arranged one inside the other and adjacent to one another, each with a different depth.
  • the recess consists of two rings.
  • An inner ring that borders directly on the flat surface section has, for example, a relatively small depth of 5 ⁇ m to 25 ⁇ m.
  • An outer ring that is adjacent to the inner ring has a depth of 50 ⁇ m to 500 ⁇ m.
  • a depth profile of such a recess has one step.
  • the height of the step is preferably selected such that the liquid film formed immediately after the liquid is applied does not tear off prematurely, so that excess liquid can flow off into the deeper region of the recess. It is also conceivable that there is at least one channel in the step for draining the liquid into the lower region of the recess.
  • the recess has a dimension selected from the range of 0.1 mm to 10 mm inclusive and arranged transversely to the depth.
  • the dimension is, for example, a ring width of a ring forming the recess.
  • the ring width is 0.1 mm, for example.
  • the dimension can also be a ring diameter of the ring.
  • the ring diameter is 10 mm, for example.
  • the surface section enclosed by the 0.1 mm wide ring has a surface diameter of 8 mm.
  • the substrate can be made of any material.
  • the substrate consists of a polymer.
  • the substrate is in particular from the group of single crystals or polycrystalline substrate selected.
  • Any substrate made of a ceramic (ceramic material) and / or a metal can be used as the polycrystalline substrate.
  • the substrate consists of a sapphire (A1 2 0 3 ).
  • a silicon wafer is particularly conceivable as a single-crystal or polycrystalline substrate.
  • the substrate has elemental silicon.
  • the flat surface section has a coating on which the liquid film can be formed.
  • the coating can perform various functions.
  • the coating influences the wettability of the surface section with the liquid.
  • the surface section can be polar and non-polar.
  • a silicon dioxide coating automatically forms on a substrate made of silicon. This coating is relatively polar, so that polar liquids such as alcohols wet the surface section well.
  • the coating can also be used to analyze the material films produced from the liquid films.
  • the coating can be a platinum layer.
  • the coating consists of elemental platinum.
  • the platinum layer is electrically conductive. An electrical or dielectric property of the material film produced on the platinum layer can be examined by electrically controlling the platinum layer.
  • the substrate is used to produce a material film on the surface section.
  • a substrate is accessible in which a material film with a material is formed on the surface section.
  • a liquid film is formed on the surface portion.
  • a certain volume of the liquid is applied (piped) to the surface section, the excess liquid with a view to the formation of the liquid film into the recess of the
  • the determined volume of the liquid is selected from the range from 0.1 ⁇ l up to and including 10 ⁇ l.
  • the volume is preferably selected from the range from 0.5 ⁇ l to 5 ⁇ l.
  • a volume of 1 ⁇ m is applied to a surface section with a surface diameter of 8 mm. Due to the excess liquid flowing off, in particular a material film with a film thickness selected from the range from 0.05 ⁇ m to 2.0 ⁇ m inclusive is accessible. Due to the small thickness of the liquid film formed, the material film made from it is characterized by high quality.
  • the quality relates, for example, to a homogeneity of the composition of the material film or an approximately equal film thickness over the entire area of the material film.
  • a severe shrinkage can occur due to a temperature treatment of the liquid film. With a thick liquid film, this would lead to an inhomogeneous material film.
  • a thin liquid film results in a homogeneous material film despite strong shrinkage.
  • the material film can consist of any material.
  • the material of the material film is selected at least from the group of polymeric material and / or ceramic material.
  • the polymeric material is any inorganic, organic or organometallic polymer. Any oxide, sulfide and the like can be used as the ceramic material. A composite of polymer and ceramic is also conceivable.
  • the liquid can be a liquid substance or a liquid substance mixture.
  • the liquid can also be a solution of solvent and one or more substances dissolved therein.
  • a liquid film with a sol gel is applied with the material and / or with a precursor of the material.
  • a temperature treatment is performed to convert the liquid film, thereby forming the material film.
  • the temperature treatment removes only solvents from the liquid film, for example.
  • the heat treatment can also lead to ner chemical reaction, in the course of which the material film is formed.
  • a liquid film with a sol-gel with the ceramic material and / or with a preliminary stage of the ceramic material is used in particular.
  • the material film is formed with the ceramic material.
  • the temperature treatment leads, for example, to the pyrolysis of organic precursors of the ceramic material.
  • the temperature treatment also includes calcining and / or sintering the ceramic material.
  • a material film with a polymeric material in particular a liquid film with at least one monomer and / or with at least one oligomer is applied.
  • the monomer and / or the oligomer is then crosslinked to form the material film with the polymeric material.
  • Several types of monomers can be applied, the crosslinking resulting in a copolymer.
  • a sol gel of the monomers and / or the oligomers can be applied to the surface section.
  • the crosslinking can be thermally induced. Photo-induced crosslinking of the monomers and / or the oligomers is also conceivable.
  • the formation of the liquid film and the conversion of the liquid film into the material film are carried out repeatedly in a further embodiment. In this way, a material film with a film thickness in the range of 0.5 ⁇ m to 2.0 ⁇ m can be produced.
  • many flat surface sections are arranged on a surface of the substrate.
  • Each of the flat surface sections is preferably surrounded by a recess in the form of a closed ring.
  • the recesses ensure that different liquids that are applied to the surface sections of the substrate do not mix.
  • the surface sections can be arranged as desired on a surface of the substrate.
  • the flat surface sections are arranged in a matrix.
  • 81 surface sections in the form of a 9 x 9 matrix with nine rows and nine columns are arranged on a substrate with a substrate diameter of approximately 152.4 mm (6 inches).
  • the recesses enable a relatively high density of surface sections on the substrate.
  • the substrate has a density of up to one surface section per cm 2 .
  • a density of up to five surface sections per cm 2 is also conceivable.
  • 255 surface sections are arranged on a round substrate with a substrate diameter of 152.4 mm.
  • at least one common recess can adjoin at least two flat surface sections. Adjacent surface sections are separated from one another by a common recess.
  • a substrate with a material library can be produced with the aid of the method.
  • the result is a substrate with many flat surface sections forming a material library with many material films.
  • the substrate is used in combinatorial chemistry, material films being produced and analyzed on a large number of surface sections.
  • a piping robot is used for generation and an analysis robot for analysis.
  • Figure la shows a section of a substrate in cross section.
  • Figure lb shows a part of the section of the substrate.
  • Figures lc and ld show sections of further embodiments of the substrate in cross section.
  • Figure 2 shows a substrate with many surface sections with material films from above.
  • FIG. 3 shows a method for producing a material film.
  • the substrate 1 is a silicon wafer with a substrate diameter 11 of approximately 152.4 mm.
  • a matrix 5 composed of 9 ⁇ 9 surface sections 2 is arranged on the surface 22 of the substrate 1.
  • Each of the surface sections is round and has a surface diameter 21 of approximately 8 mm.
  • the substrate 1 has a material library 6.
  • a material film 4 made of different ceramic material is formed on each of the surface sections 2 of the substrate.
  • a recess 3 adjoins each of the surface sections 2.
  • the recess 3 has an abruptly changing depth.
  • the recess 3 consists of two round, closed rings 31 and 32 ( Figures la and lb).
  • An inner ring 31 borders directly on the surface section 2.
  • the inner ring has a depth 311 of 15 ⁇ m and a ring width 312 of 1.5 mm.
  • An outer ring 32 of the recess surrounds the inner ring.
  • the depth 321 of the outer ring is 150 ⁇ m with a ring width 32 of approximately 0.5 mm.
  • the recess 3 does not increase suddenly, but steadily with increasing distance from the surface section 21.
  • the recess 3 increases with increasing distance from the surface section 21 and opens into a recess with a constant depth.
  • a liquid film is formed from a sol gel with a plurality of precursors of the ceramic material on each of the surface sections 2
  • the sol gels are applied with a volume of approximately 1 ⁇ l to the respective surface section 2. Excess liquid flows from the surface section 2 into the corresponding recesses 3. The sol gels are subsequently subjected to a temperature treatment, the
  • Liquid films are transferred into the material film 4 (FIGS. 3, 302).
  • the material library 6 is formed on the substrate 1.
  • a photosensitive layer is laminated onto the silicon wafer.
  • This photosensitive layer is structured photolithographically and subsequently developed.
  • the depths 311 and 321 of the recess are generated in the undeveloped regions of the layer by means of beam chips.

Abstract

L'invention concerne un substrat comprenant une section superficielle plane aux fins de formation d'un film de fluide sur cette section superficielle. Le substrat est caractérisé en ce qu'au moins un creux du substrat est adjacent à la section superficielle plane de telle manière que le liquide excédentaire lors de la formation du film de fluide, puisse s'écouler dans le creux. L'invention concerne également un procédé de production d'un film de matériau comprenant un matériau sur une section superficielle du substrat. Ce procédé consiste : a) à former un film de fluide avec le matériau et/ou avec un précurseur du matériau sur la section superficielle et b) à transformer le film de fluide par le matériau et/ou le précurseur du matériau dans le film de matériau. Le substrat est utilisé en chimie combinatoire. De minces films de matériau homogène sont produits (bibliothèque de matériau) sur de nombreuses sections superficielles d'un substrat et analysés. Pour produire des films de matériaux, on peut utiliser des précurseurs fluides ou des solutions des précurseurs des films de matériaux. Les creux permet d'obtenir une grande densité de films de matériaux par unité de surface.
PCT/EP2003/010809 2002-09-30 2003-09-29 Substrat comprenant une section superficielle plane, procede de production d'un film de materiau sur la section superficielle du substrat et utilisation de ce substrat WO2004032228A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003271657A AU2003271657A1 (en) 2002-09-30 2003-09-29 Substrate with a planar surface section, method for the production of a material film on the surface section of the substrate and use of said substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10245675 2002-09-30
DE10245675.5 2002-09-30

Publications (2)

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WO2004032228A2 true WO2004032228A2 (fr) 2004-04-15
WO2004032228A3 WO2004032228A3 (fr) 2004-06-10

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Cited By (2)

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WO2009039822A1 (fr) * 2007-09-27 2009-04-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Support de gel pour l'essai comet avec possibilité d'automatisation de l'analyse par robot pour la réalisation d'un procédé à haut rendement
EP2087349B1 (fr) * 2006-10-26 2015-12-23 The University of Bradford Dosage et procédé

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