WO2004013901A3 - Batch furnace - Google Patents
Batch furnace Download PDFInfo
- Publication number
- WO2004013901A3 WO2004013901A3 PCT/US2003/023849 US0323849W WO2004013901A3 WO 2004013901 A3 WO2004013901 A3 WO 2004013901A3 US 0323849 W US0323849 W US 0323849W WO 2004013901 A3 WO2004013901 A3 WO 2004013901A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- process tube
- assembly
- tube
- heating
- temperature
- Prior art date
Links
- 238000000034 method Methods 0.000 abstract 8
- 238000010438 heat treatment Methods 0.000 abstract 5
- 239000007789 gas Substances 0.000 abstract 3
- 235000012431 wafers Nutrition 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03766990A EP1540708A2 (en) | 2002-08-02 | 2003-07-30 | Batch furnace |
JP2004526235A JP4537201B2 (en) | 2002-08-02 | 2003-07-30 | Batch furnace |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/211,757 US6727194B2 (en) | 2002-08-02 | 2002-08-02 | Wafer batch processing system and method |
US10/211,757 | 2002-08-02 | ||
US10/313,707 US6879778B2 (en) | 2002-08-02 | 2002-12-05 | Batch furnace |
US10/313,707 | 2002-12-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004013901A2 WO2004013901A2 (en) | 2004-02-12 |
WO2004013901A3 true WO2004013901A3 (en) | 2004-06-10 |
Family
ID=31498035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/023849 WO2004013901A2 (en) | 2002-08-02 | 2003-07-30 | Batch furnace |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1540708A2 (en) |
JP (1) | JP4537201B2 (en) |
KR (1) | KR100686401B1 (en) |
WO (1) | WO2004013901A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5410119B2 (en) * | 2009-03-02 | 2014-02-05 | 光洋サーモシステム株式会社 | Substrate heat treatment equipment |
JP6630146B2 (en) * | 2015-02-25 | 2020-01-15 | 株式会社Kokusai Electric | Substrate processing apparatus, semiconductor device manufacturing method, and heating unit |
DE102020124030B4 (en) | 2020-09-15 | 2022-06-15 | centrotherm international AG | Apparatus, system and method for plasma enhanced chemical vapor deposition |
KR102359596B1 (en) * | 2021-04-21 | 2022-02-08 | 주식회사 알씨테크 | A seal cap and a semiconductor manufacturing equipment comprising thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723508A (en) * | 1985-04-08 | 1988-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Plasma CVD apparatus |
WO1998039609A1 (en) * | 1997-03-07 | 1998-09-11 | Semitool, Inc. | Semiconductor processing furnace |
US6191388B1 (en) * | 1998-11-18 | 2001-02-20 | Semitool, Inc. | Thermal processor and components thereof |
US6407368B1 (en) * | 2001-07-12 | 2002-06-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | System for maintaining a flat zone temperature profile in LP vertical furnace |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6366927A (en) * | 1986-09-08 | 1988-03-25 | Toshiba Corp | Thermal treatment equipment |
US4738618A (en) * | 1987-05-14 | 1988-04-19 | Semitherm | Vertical thermal processor |
JPH06349738A (en) * | 1993-06-08 | 1994-12-22 | Nec Corp | Vertical low-pressure cvd device |
JPH1197446A (en) * | 1997-09-18 | 1999-04-09 | Tokyo Electron Ltd | Vertical heat treatment equipment |
JP3862197B2 (en) * | 1999-10-19 | 2006-12-27 | 株式会社グローバル | Vertical heat treatment equipment |
JP3598032B2 (en) * | 1999-11-30 | 2004-12-08 | 東京エレクトロン株式会社 | Vertical heat treatment apparatus, heat treatment method, and heat insulation unit |
JP3435111B2 (en) * | 1999-12-15 | 2003-08-11 | 株式会社半導体先端テクノロジーズ | Semiconductor wafer heat treatment equipment |
JP2001284276A (en) * | 2000-03-30 | 2001-10-12 | Hitachi Kokusai Electric Inc | Substrate treating device |
-
2003
- 2003-07-30 KR KR1020057001871A patent/KR100686401B1/en not_active IP Right Cessation
- 2003-07-30 EP EP03766990A patent/EP1540708A2/en not_active Withdrawn
- 2003-07-30 WO PCT/US2003/023849 patent/WO2004013901A2/en active Application Filing
- 2003-07-30 JP JP2004526235A patent/JP4537201B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4723508A (en) * | 1985-04-08 | 1988-02-09 | Semiconductor Energy Laboratory Co., Ltd. | Plasma CVD apparatus |
WO1998039609A1 (en) * | 1997-03-07 | 1998-09-11 | Semitool, Inc. | Semiconductor processing furnace |
US6191388B1 (en) * | 1998-11-18 | 2001-02-20 | Semitool, Inc. | Thermal processor and components thereof |
US6407368B1 (en) * | 2001-07-12 | 2002-06-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | System for maintaining a flat zone temperature profile in LP vertical furnace |
Also Published As
Publication number | Publication date |
---|---|
KR100686401B1 (en) | 2007-02-26 |
JP2005535128A (en) | 2005-11-17 |
KR20050062521A (en) | 2005-06-23 |
JP4537201B2 (en) | 2010-09-01 |
WO2004013901A2 (en) | 2004-02-12 |
EP1540708A2 (en) | 2005-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2004013903A3 (en) | Wafer batch processing system and method | |
US5892886A (en) | Apparatus for uniform gas and radiant heat dispersion for solid state fabrication processes | |
US10418293B2 (en) | Substrate processing apparatus, method of manufacturing semiconductor device, and thermocouple support | |
JP4276813B2 (en) | Heat treatment apparatus and semiconductor manufacturing method | |
US20050279138A1 (en) | Method and device for heat treatment | |
JP4887293B2 (en) | Substrate processing apparatus, substrate manufacturing method, semiconductor device manufacturing method, and substrate processing method | |
WO2004013901A3 (en) | Batch furnace | |
US20030015142A1 (en) | Apparatus for fabricating a semiconductor device | |
JP2006319175A (en) | Substrate processing apparatus | |
JP2007073865A (en) | Heat treatment device | |
US5550351A (en) | Process and apparatus for contamination-free processing of semiconductor parts | |
JPH07135182A (en) | Heat-treating device | |
JP4410472B2 (en) | Semiconductor manufacturing apparatus and semiconductor device manufacturing method | |
JP2001156011A (en) | Heat treatment equipment for semiconductor wafer | |
JP2004281674A (en) | Heat treatment equipment and process for producing substrate | |
JP3328853B2 (en) | Heat treatment apparatus and heat treatment method | |
JP2009218609A (en) | Heat treatment apparatus, heater unit, and semiconductor manufacturing method | |
JP2006210768A (en) | Heat treatment apparatus and manufacturing method of substrate | |
JP2009016532A (en) | Substrate treatment equipment and manufacturing method for semiconductor device | |
JPH04196523A (en) | Heat treatment equipment | |
JP2001093841A (en) | Apparatus for thermally treating at high temperature and under high vacuum | |
KR101430752B1 (en) | Door of doping process tube for solar cell wafer | |
EP1801261A1 (en) | Chemical vapor deposition apparatus and methods of using the apparatus | |
JPH09167774A (en) | Heat treatment equipment | |
KR101420705B1 (en) | Sealing Device and Method Between Chamber Housing and Plate Housing, and Heat Treatment Chamber and Heat Treatment Apparatus of Substrate Having the Same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): JP KR |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2003766990 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2004526235 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020057001871 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2003766990 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020057001871 Country of ref document: KR |