WO2004004418A1 - 金属系抵抗発熱体とその製造方法 - Google Patents
金属系抵抗発熱体とその製造方法 Download PDFInfo
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- WO2004004418A1 WO2004004418A1 PCT/JP2003/008334 JP0308334W WO2004004418A1 WO 2004004418 A1 WO2004004418 A1 WO 2004004418A1 JP 0308334 W JP0308334 W JP 0308334W WO 2004004418 A1 WO2004004418 A1 WO 2004004418A1
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- WIPO (PCT)
- Prior art keywords
- film
- metal
- layer
- heating element
- resistance heating
- Prior art date
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 69
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 49
- 239000002184 metal Substances 0.000 title claims abstract description 49
- 238000000034 method Methods 0.000 title claims description 24
- 238000002360 preparation method Methods 0.000 title 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000011162 core material Substances 0.000 claims abstract description 40
- 239000011248 coating agent Substances 0.000 claims abstract description 34
- 238000000576 coating method Methods 0.000 claims abstract description 34
- 229910000951 Aluminide Inorganic materials 0.000 claims abstract description 23
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 19
- 239000003870 refractory metal Substances 0.000 claims abstract description 15
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 8
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 5
- 229910000599 Cr alloy Inorganic materials 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 25
- 230000007797 corrosion Effects 0.000 claims description 24
- 238000005260 corrosion Methods 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000009792 diffusion process Methods 0.000 claims description 18
- 230000008595 infiltration Effects 0.000 claims description 16
- 238000001764 infiltration Methods 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 4
- 230000035515 penetration Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 69
- 230000003647 oxidation Effects 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 17
- 238000007747 plating Methods 0.000 description 10
- 238000009713 electroplating Methods 0.000 description 8
- 239000011261 inert gas Substances 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 8
- 238000005486 sulfidation Methods 0.000 description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000005987 sulfurization reaction Methods 0.000 description 5
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004453 electron probe microanalysis Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 3
- 238000005485 electric heating Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 3
- 239000011780 sodium chloride Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 229910001260 Pt alloy Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011863 silicon-based powder Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 238000005382 thermal cycling Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910000691 Re alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- -1 platinum group metals Chemical class 0.000 description 1
- 238000011536 re-plating Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
- C23C10/34—Embedding in a powder mixture, i.e. pack cementation
- C23C10/52—Embedding in a powder mixture, i.e. pack cementation more than one element being diffused in one step
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/28—Solid state diffusion of only metal elements or silicon into metallic material surfaces using solids, e.g. powders, pastes
- C23C10/34—Embedding in a powder mixture, i.e. pack cementation
- C23C10/58—Embedding in a powder mixture, i.e. pack cementation more than one element being diffused in more than one step
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/028—Including graded layers in composition or in physical properties, e.g. density, porosity, grain size
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12458—All metal or with adjacent metals having composition, density, or hardness gradient
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12736—Al-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12875—Platinum group metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12944—Ni-base component
Definitions
- the present invention provides a metal-based resistance heating element that covers a wide temperature range from room temperature to over 200 ° C. and can be used in various atmospheres (oxidizing, reducing, vacuum, corrosive, etc.). And its manufacturing method.
- Background art oxidizing, reducing, vacuum, corrosive, etc.
- the heat-resistant limit temperature of the Ni—Cr alloy which is widely used as a metal-based resistance heating element, is 110 ° C., and that of the Fe—1-Cr alloy is 125 ° C.
- Platinum or platinum alloy has heat resistance, corrosion resistance, and excellent workability, so it is used as a resistance heating material for precision temperature control in various analytical instruments, etc. in the temperature range up to 160 ° C. I have.
- silicon carbide heating elements are used in an oxidizing atmosphere up to 165 ° C, and molybdenum silicide heating elements are used up to 175 ° C.
- both are brittle materials, have the drawback that they are difficult to process and have poor thermal shock resistance.
- the use of carbon-based heating elements is restricted in oxidizing atmospheres due to oxidative consumption.
- Rhenium metal has the second highest melting point next to tungsten, and has an electrical resistance that is two to four times that of platinum group metals and refractory metals. This high melting point and high electric resistance are particularly desirable characteristics for a heating element material such as foil strips and ultrafine wires, and rhenium metal is promising as a resistance heating element material used at ultra-high temperatures. However, rhenium metal has poor oxidation resistance, and is a brittle material with poor workability.
- Patent Document 1 Japanese Patent Application Laid-Open No. 5-2991 56 Disclosure of the Invention
- An object of the present invention is to provide a metal-based resistance heating element which is excellent in heat resistance and high-temperature corrosion resistance using a platinum group metal or a refractory metal as a core material by using a rhenium alloy film. That is, the present invention includes the following.
- the outermost layer on the side is an aluminide layer or a silicide layer, and is a metal-based resistance heating element excellent in heat resistance and high-temperature corrosion resistance.
- a feature is that a Cr film and an A1 film are deposited on an inner layer composed of a system growth (sigma) phase, and then a heat treatment is performed to form a Cr-aluminide layer by an aluminum diffusion and infiltration treatment.
- a Re film and an A1 film are deposited on the inner layer consisting of the Re-Cr system sigma (sigma) phase, and then heat-treated to form a Re-aluminide layer by diffusion and infiltration of aluminum.
- the Re-silicide layer is formed by depositing a Re film on the inner layer of the sigma (sigma) phase of the Re_Cr system, and then forming a Re-silicide layer by silicon diffusion and infiltration treatment.
- the method for producing a metal-based resistance heating element is described in detail below.
- a platinum group metal or a refractory metal material is formed into a member having a desired shape, and then a coating of a Re—Cr alloy or a multilayer coating of a Re coating and a Cr coating is applied. Processes and diffuses Re and Cr into the material and changes the material into a material metal-Re-Cr alloy Forming aluminide layer or silicide layer by subjecting aluminum or silicon to diffusion and infiltration treatment.
- the method for producing a metal-based resistance heating element having excellent heat resistance and high temperature corrosion resistance. .
- a Cr film and an A1 film are deposited on the material metal—Re—Cr alloy, and then heat-treated to form a Cr—aluminide layer by diffusion and infiltration of aluminum.
- the material of the resistance heating element of the present invention is a platinum group metal (Pt, Ir, Rh, Ru) or a refractory metal (W, Ta, Mo, Nb). These metals may contain a small amount of alloy components as long as the effect of the present invention as a resistance heating element is not impaired.
- a material made of a platinum group metal or a refractory metal is formed into a member of the desired shape, and then a 16- ⁇ : alloy film or a multilayer film of a Re film and a Cr film is applied.
- heat treatment is performed to form a layer composed of the Re-Cr system sigma (sigma) phase.
- the deposition of the R e-Cr alloy coating or the multilayer coating of the R e coating and the C r coating is preferably performed by electroplating of the Re—Cr alloy or by multi-layer electroplating of Re plating and Cr plating.
- the electroplating of the R e—Cr alloy can be performed, for example, by the following method.
- the electrolytic bath in the electrolytic cell 1 from 0.1 to 5 weight 0/0 R e C 14, was added C r C 13 of from 0.1 to 5 wt ° / 0, the electrolytic bath 0.3 Electrolyte bath temperature while stirring at m / s 1 At 60, plating is performed at various electrolytic potentials.
- Range of C r composition of R e- C r alloy coating is continuous 6- (: 1:.
- the coating of the remnant alloy is prepared by using an electroplating method.
- a method such as a CVD method, a PVD method, a sputtering method, etc. can also be used. It is not limited to the electroplating method.
- the electroplating of Re is performed by adding 0.1 to 5% by weight of ReC14 to the electric bath of the electrolytic cell 1 and stirring the electrolytic bath at 0.3 m / s.
- the reaction is carried out at an electrolytic bath temperature of 160 ° C. and at various electrolytic potentials.
- plating with a normal Sargent bath may be used.
- the film formed by plating is subjected to an intermediate heat treatment in a vacuum or an inert gas atmosphere.
- any heating method such as an electric heating method or a normal electric furnace heating method may be used.
- the electric heating method the current mainly flows through the core, and the core is heated.
- a layer composed of a Re—Cr-based ⁇ (sigma) phase is formed on the surface of the core material, or the core material and the Re—Cr plating layer are interdiffused to form the core material. Change to one Cr alloy.
- the temperature is raised to 1300 ° C at a rate of 10 ° CZ, and 1 to 1 Hold for 0 hours.
- the holding time is preferably about 2 hours. It is important that the Re-Cr film does not peel off or fall off during the heating. There may be cracks.
- This intermediate heat treatment repairs defects such as cracks in the Re-Cr coating layer and forms an intermittent layer consisting of the Re-Cr-based ⁇ (sigma) phase.
- phase 5 is diffused from the interface of the core material ZR e (Cr), and the core material changes to the core metal R e — Cr alloy. I do.
- the pack cementation method can be used for the diffusion treatment of A1 or Si. However, there are also methods such as immersion in molten metal A1 or Si, and any of these methods may be used. Diffusion and infiltration of aluminum may be performed by plating an A1-Cr alloy from a molten salt bath.
- a Cr film and an A1 film may be deposited on the layer composed of the Re-Cr-based (sigma) phase, and then heat-treated at a high temperature to form a Cr-aluminide.
- the temperature of the heat treatment is 800-1300 ° C, and about 1000 ° C is a desirable temperature.
- the thickness of the Cr film is about 5 to 30 m, preferably about 10 m.
- a Re-aluminide may be formed by depositing 16 films and 1 film on a layer composed of a Re—Cr-based ⁇ (sigma) phase, and then performing a heat treatment at a high temperature.
- the temperature of the heat treatment is about 800-1300 ° C, and about 1000 ° C is a desirable temperature.
- the thickness of the Re film is about 5 to 30 ⁇ .
- Re—A1 layer is not formed, and if the amount is too large, it is not preferable because cracks and peeling are formed under thermal cycling.
- a Re film may be deposited on the layer of the ⁇ (sigma) phase of the Re-Cr system, and then a Re-silicide layer may be formed by a silicon diffusion and infiltration treatment. In this case, the thickness of the Re film is about 5 to 30 zm.
- the amount of Re is small, a continuous Re-Si layer is not formed, and when it is too large, cracks and peeling occur under thermal cycling. Not desirable because it forms.
- FIG. 1 is a schematic diagram showing a cross section of a wire (1 and 2) in each step of manufacturing the resistance heating element of Example 1 and a cross section of a wire (3) after an oxidation test.
- FIG. 2 is a schematic diagram showing a cross section of a wire (1 and 2) in each step of manufacturing the resistance heating element of Example 2 and a cross section of a wire after a sulfidation test (3 is an example, 4 is a comparative example).
- FIG. 3 is a schematic diagram showing a cross section (1, 2) of a wire in each step of manufacturing a resistance heating element of Example 3.
- FIG. 4 is a schematic view showing a cross section (1 to 4) of a wire in each step of manufacturing the resistance heating element of Example 4.
- FIG. 1 is a schematic diagram showing a cross section of a wire (1 and 2) in each step of manufacturing the resistance heating element of Example 1 and a cross section of a wire (3) after an oxidation test.
- FIG. 2 is a schematic diagram showing a cross section of
- FIG. 5 is a schematic diagram showing a cross section of a wire (1 to 3) and a cross section of a wire after a sulfidation test (4) in each step of manufacturing the resistance heating element of Example 5.
- Core material PtZ film inner layer: Re (Cr-Pt) Z film outer layer: Re-Cr-aluminide resistance heating element was manufactured by the following process, and its oxidation resistance was tested.
- a Pt wire (100 m) was prepared and first formed into a target shape. Using this Pt wire as a cathode and a platinum electrode as a counter electrode, the electrolytic bath (AlCls : 63raol% NaCl: 20mol% KC1 :. To 17 mol%) in a R e C 14 of 0.4 weight 0/0 ⁇ quadruple mass% of C r C 13 was added, the electrolytic bath 0. 3 m Electrolyte bath temperature 160 while stirring at / s. A 10 m thick electrodeposited 1 e-Cr alloy film with a composition of 50 atomic% of Cr in C was obtained. The potential of the sample electrode was 0.0 V with respect to the potential of the A1 reference electrode.
- the temperature of the Pt wire coated with the R e—Cr alloy film was raised to 1300 ° C at a rate of 10 ° C / min by heating in an inert gas atmosphere and held for 2 hours. Intermediate heat treatment was performed. Subsequently, a 10 mm thick Cr film was formed by electroplating from a normal Sargent Cr plating bath.
- the purity was 99.9 atoms.
- the electrolytic bath of the electrolytic cell 1 AlCl3: 63 mol%, NaCl: 20 mol% KC1: 17 tnol ° /.
- the electrolytic bath temperature 160 ° C
- the coating was electroplated at a thickness of 5 / xm.
- the potential of the sample electrode was 0.10 V with respect to the potential of the A1 reference electrode.
- the cross-sectional structure of the obtained wire was formed, and at least a three-layered film was formed around the Pt core material I.
- the inner layer on the core I side is a Re-Cr system ⁇ (sigma) phase ⁇
- the outer layer is a Cr film ⁇
- the outermost layer is an A1 film IV.
- the temperature was raised at a rate of 10 ° C / min by energizing heating, the temperature was maintained at 600 ° C for 4 hours, and then the temperature was further increased to 130 ° C and held for 1 hour.
- Fig. 1 (2) the structure of the cross section of the obtained wire is schematically shown.
- the core I is Pt, and the inner layer of the coating is the ⁇ (sigma) phase ⁇ of the Re-Cr system. is there.
- the outermost Cr film ⁇ and the outermost A1 film IV react to form Cr-alumina containing 75 atomic% A1.
- the Pt wire on which the above film was formed was subjected to an oxidation test in air at 1300 ° C for up to 1000 hours. For comparison, a similar test was performed for a Pt wire having no coating. The results are shown in Table 1.
- Fig. 1 (3) schematically shows the cross-sectional structure of the Pt wire after the test.
- the cross-sectional structure is similar to that of Fig. 1 (2), and it can be seen that there is little change after holding at high temperature.
- Core material PtZ Inner layer: Re (Cr-Pt) / Outer layer: A resistance heating element having a structure of Re-aluminide was manufactured in the following process, and its oxidation resistance was tested. Under the same conditions as in Example 1, a Pt wire rod was electroplated with a Re_Cr alloy film and subjected to an intermediate heat treatment. Subsequently, 0.4% by weight of 1 eC14 was added to the electrolytic bath of the electrolytic cell 1. While stirring the electrolytic bath at 0.3 m / s, at an electrolytic bath temperature of 160 ° C, the potential of the sample electrode is A ⁇ 0.0 V with respect to the potential of the reference electrode. 10 / m electric plating.
- the Pt wire rod on which the Re—Cr alloy film and the Re film were formed was used as a cathode, and the electrolytic bath was stirred at 0.3 m / s.
- the A 1 coating was electroplated to a thickness of 15 ira.
- the potential of the sample electrode was 0.1 IV with respect to the potential of the A1 reference electrode.
- the structure of the cross section of the obtained wire was formed, and at least a three-layered film was formed around the Pt core material I.
- the inner layer on the core material I side is the Re_Cr system ⁇ (sigma) phase
- the outer layer is the Re film DI
- the outermost layer is the A1 film IV.
- Fig. 2-(2) schematically shows the structure of the cross section of the obtained Pt wire.
- the core material I is Pt
- the inner layer of the coating is the ⁇ (sigma) phase of the Re-Cr system.
- the outer layer of the R e film ⁇ and the outermost layer of the A 1 film IV reacted to form an outer layer of the R e -aluminide phase V containing 75 atoms 0 / oA 1.
- FIG. 1 (3) schematically shows the cross-sectional structure of the wire after the test.
- Fig. 2 (4) schematically shows the cross-sectional structure of a Pt wire without a film after the test as a comparative example.
- the Pt wire without a coating forms a cracked PtS2 scale, and as shown in Table 2, corrosion progresses according to the linear rule.
- the protective scale ⁇ of A12S3 is formed according to the parabolic law as shown in FIG. 1 (3).
- the temperature was raised to 0 ° C and kept for 2 hours.
- the structure of the cross section of the obtained wire was formed, and at least a two-layered film was formed around the Pt core I.
- the inner layer on the core material side was a Re-Cr system ⁇ (sigma) phase ⁇
- the outer layer was Re S i ⁇ .8 phase V.
- Sulfidation Corrosion Test The Pt wire on which the above-described film was formed was subjected to a sulfuration corrosion test at 100 ° C. for a maximum of 100 hours in a 2 V 1% hydrogen sulfide / hydrogen mixed gas. For comparison, a similar test was performed on a Pt wire having no coating. The results are shown in Table 3. (Table 3) Corrosion amount (mg / cm 2 )
- Core material (Re-Cr-Pt) / Coating inner layer: Re (Cr-Pt) No coating outer layer: A resistance heating element with a structure of Cr-aluminide is manufactured by the following process. The oxidation resistance was tested. Under the same conditions as in Example 1, a Pt wire rod was electroplated with a Re—Cr alloy film. However, the thickness was set to 50 m. As shown in Fig. 4- (1), the structure of the cross section of the obtained wire is schematically shown. A Re-Cr alloy film and a film are formed around the Pt core I.
- the Pt core material I is a ⁇ phase I 'of Re-Cr-Pt in which Pt is dissolved. (Re—41 at.% Cr—18 at./. Pt).
- a Cr film having a thickness of ⁇ ⁇ m was formed by electroplating from a normal Sargent Cr plating bath. Subsequently, while the Cr-plated pt wire was used as a cathode in the electrolytic bath of the electrolytic cell 1 and the electrolytic bath was stirred at 0.3 m / s, the electrolytic bath temperature was set at 16 m / s.
- Fig. 4 (3) shows the structure of the cross section of the obtained wire rod. As shown in Fig. 7, a Cr film ⁇ and an A1 film IV are formed around the ⁇ phase I 'of Re-Cr-Pt.
- Fig. 1 (4) schematically shows the structure of the cross section of the obtained wire rod, and a film consisting of Cr-aluminide phase V is surrounded around the ⁇ phase I 'of Re-Cr-Pt. Had formed.
- the composition of the core material I is the same as in Fig. 4 (3), but the coating consists mainly of the Cr (A1) phase.
- Example 5 Core material: (Re-Cr-Ta) / Coating inner layer: Re (Cr-Ta) Z Coating outer layer: Re-Resistance heating element with silicide structure is manufactured by the following process, and its acid resistance was tested.
- a Ta wire instead of a Pt wire, a Re—Cr alloy film was electroplated under the same conditions as in Example 4.
- Fig. 1 (1) the structure of the cross section of the obtained wire is schematically shown around the Pt core I, where a Re-Cr alloy film and a film are formed.
- an intermediate heat treatment was performed under the same conditions as in Example 4.
- Fig. 1 the structure of the cross section of the obtained wire is schematically shown around the Pt core I, where a Re-Cr alloy film and a film are formed.
- the structure of the cross section of the obtained wire is schematically shown, and the Ta core material changed to the ⁇ phase I of ReCrTa in which Ta was dissolved. Subsequently, the Ta wire rod was buried in an Si powder in an inert gas atmosphere, heated by electricity, heated to 1500 ° C., and held for 2 hours. As shown schematically in Fig. 1 (3), the structure of the cross section of the obtained wire is shown.
- the core I is a ⁇ phase I of Re-Cr-Ta with solid solution of Ta,
- the film was a Re-silicide phase V (R e S i 1.8 + S i) containing more than 70 at% Si.
- From room temperature to over 2000 ° C! Provide a metal-based resistance heating element that can cover a wide temperature range and can be used in various atmospheres (oxidizing, reducing, vacuum, corrosive atmosphere, etc.) and a method of manufacturing the same.
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- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
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Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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US10/519,802 US7150924B2 (en) | 2002-07-01 | 2003-06-30 | Metal based resistance heating element and method for preparation therefor |
EP03736319A EP1542505B1 (en) | 2002-07-01 | 2003-06-30 | Metal based resistance heating element and method for preparation thereof |
DE60320658T DE60320658T2 (de) | 2002-07-01 | 2003-06-30 | Widerstandsheizelement auf metallbasis und verfahren zu seiner herstellung |
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JP2002191587A JP3821756B2 (ja) | 2002-07-01 | 2002-07-01 | 金属系抵抗発熱体とその製造方法 |
JP2002-191587 | 2002-07-01 |
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US (1) | US7150924B2 (ja) |
EP (1) | EP1542505B1 (ja) |
JP (1) | JP3821756B2 (ja) |
DE (1) | DE60320658T2 (ja) |
WO (1) | WO2004004418A1 (ja) |
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EP2083097B1 (en) * | 2006-11-16 | 2014-01-08 | National University Corporation Hokkaido University | Multilayer alloy coating film, heat-resistant metal member having the same, and method for producing multilayer alloy coating film |
JP4896702B2 (ja) | 2006-12-22 | 2012-03-14 | 株式会社ディ・ビー・シー・システム研究所 | 合金皮膜、合金皮膜の製造方法および耐熱性金属部材 |
US20090062159A1 (en) * | 2007-08-31 | 2009-03-05 | Honeywell International, Inc. | Non-lubricated components and machine systems and vehicles including the components |
JP5618445B2 (ja) * | 2009-05-27 | 2014-11-05 | 石福金属興業株式会社 | 高耐久性Pt線 |
JP5737682B1 (ja) * | 2014-04-28 | 2015-06-17 | 国立研究開発法人宇宙航空研究開発機構 | 耐熱性金属部材、耐熱性金属部材の製造方法、合金皮膜、合金皮膜の製造方法、ロケットエンジン、人工衛星および発電用ガスタービン |
SG11201706481RA (en) * | 2015-02-18 | 2017-09-28 | Kirin Co Ltd | Heat generation element and method for producing same |
CN106072775A (zh) * | 2016-07-27 | 2016-11-09 | 杭州森翼科技有限公司 | 一种电子烟用复合加热丝 |
TWI612183B (zh) * | 2016-09-12 | 2018-01-21 | 一種電化學加工電極及其製造方法 | |
CN115474300B (zh) * | 2022-11-02 | 2023-01-31 | 久盛电气股份有限公司 | 一种入油管式加热电缆结构、装置及加热方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH05299156A (ja) * | 1992-04-23 | 1993-11-12 | Nippon Steel Corp | 高融点金属ヒーターとその製造方法 |
JPH09245940A (ja) * | 1996-03-06 | 1997-09-19 | Jidosha Kiki Co Ltd | セラミック発熱体およびその製造方法 |
JPH11228244A (ja) * | 1998-02-12 | 1999-08-24 | Ngk Insulators Ltd | 金属部材内蔵セラミックス部材及びその製造方法 |
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US5650235A (en) * | 1994-02-28 | 1997-07-22 | Sermatech International, Inc. | Platinum enriched, silicon-modified corrosion resistant aluminide coating |
GB9724844D0 (en) * | 1997-11-26 | 1998-01-21 | Rolls Royce Plc | A coated superalloy article and a method of coating a superalloy article |
US6461746B1 (en) * | 2000-04-24 | 2002-10-08 | General Electric Company | Nickel-base superalloy article with rhenium-containing protective layer, and its preparation |
DE60238076D1 (de) * | 2001-10-31 | 2010-12-02 | Toshio Narita | ÜBERZUG AUS Re-LEGIERUNG FÜR DIFFUSIONSBARRIERE |
-
2002
- 2002-07-01 JP JP2002191587A patent/JP3821756B2/ja not_active Expired - Lifetime
-
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- 2003-06-30 US US10/519,802 patent/US7150924B2/en not_active Expired - Fee Related
- 2003-06-30 WO PCT/JP2003/008334 patent/WO2004004418A1/ja active IP Right Grant
- 2003-06-30 DE DE60320658T patent/DE60320658T2/de not_active Expired - Fee Related
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05299156A (ja) * | 1992-04-23 | 1993-11-12 | Nippon Steel Corp | 高融点金属ヒーターとその製造方法 |
JPH09245940A (ja) * | 1996-03-06 | 1997-09-19 | Jidosha Kiki Co Ltd | セラミック発熱体およびその製造方法 |
JPH11228244A (ja) * | 1998-02-12 | 1999-08-24 | Ngk Insulators Ltd | 金属部材内蔵セラミックス部材及びその製造方法 |
Non-Patent Citations (1)
Title |
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See also references of EP1542505A4 * |
Also Published As
Publication number | Publication date |
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US20050287388A1 (en) | 2005-12-29 |
JP2004039315A (ja) | 2004-02-05 |
DE60320658D1 (de) | 2008-06-12 |
US7150924B2 (en) | 2006-12-19 |
EP1542505B1 (en) | 2008-04-30 |
JP3821756B2 (ja) | 2006-09-13 |
DE60320658T2 (de) | 2009-05-28 |
EP1542505A4 (en) | 2007-05-30 |
EP1542505A1 (en) | 2005-06-15 |
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