WO2003098683A1 - Systeme d'alignement de tranches et de lecture de micro-codes barres et de marques dans des puces laser - Google Patents

Systeme d'alignement de tranches et de lecture de micro-codes barres et de marques dans des puces laser Download PDF

Info

Publication number
WO2003098683A1
WO2003098683A1 PCT/ES2003/000207 ES0300207W WO03098683A1 WO 2003098683 A1 WO2003098683 A1 WO 2003098683A1 ES 0300207 W ES0300207 W ES 0300207W WO 03098683 A1 WO03098683 A1 WO 03098683A1
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
marks
laser
reading
chips
Prior art date
Application number
PCT/ES2003/000207
Other languages
English (en)
Spanish (es)
Inventor
Manuel Lozano Fantoba
Carles PERELLÓ GARCÍA
Xavier Enrich Sard
Joaquín SANTANDER VALLEJO
Original Assignee
Consejo Superior De Investigaciones Científicas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Consejo Superior De Investigaciones Científicas filed Critical Consejo Superior De Investigaciones Científicas
Priority to AU2003236212A priority Critical patent/AU2003236212A1/en
Publication of WO2003098683A1 publication Critical patent/WO2003098683A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • the invention is directed to the microelectronic technology sector. And more specifically to the section of electrical characterization of integrated circuits in wafer.
  • the wafer is placed in a system called a tip table, which holds the wafer by means of a vacuum on a metal support and metal tips make electrical contact with the manufactured circuits, allowing its test.
  • the metal support has an X-Y movement that allows the movement of one chip to another. It also has a Z movement, which allows the tips to make electrical contact or to be located at a certain distance from the wafer, in this way X-Y displacement is possible.
  • Wafers may contain information recorded on them. These marks are usually made by laser marking and are for the entire wafer. Another object of this patent is to allow reading microscopic size marks, such as bar codes, on the wafer. These brands can be global for the entire wafer or individual for each chip. The marks to read do not have to be limited to barcodes. It is possible to use the system to read marks made with the metal reading tips, in small metal rectangles intended for this purpose, manufactured on the chips. STATE OF THE TECHNIQUE
  • the system currently used for aligning and reading wafer marks is based on an optical microscope, an image acquisition system and computer image processing. Since microscopes and image acquisition plates are very expensive elements, the systems on the market have a very high cost.
  • barcode AND reader the only reference that appears with the barcode and wafer search (barcode AND reader) is as follows:
  • Bar code recipe selection system using workstation controllers. Patent number US5432702, date: 11-7-1995, author: Barnett Gerald W. This system reads bar codes associated with silicon wafers to determine the process to be performed on the mentioned wafers. The barcode is not microscopic in size, the type of reader is not specified, and what protects is the system of reading a barcode to select a process. It does not serve for alignment.
  • Wafer prober Patent number: US4864227, date: 5-9-1989, author: Mitsuya Sato.
  • This system uses a laser beam to proceed with the alignment, but not of the wafer, but of the metal needles that are used to establish electrical contact between it and the measuring equipment. It is not the same as the invention described herein.
  • the invention consists of a system for reading marks of the size of microns in semiconductor wafers, adaptable to test stations measuring wafers. These marks can be bar codes containing information or special marks for the alignment of the axes of the chips in the wafer with respect to the axes of movement X and Y of the test station. This pre-alignment is a necessary step before you can start mapping (measuring all wafer chips) and it must be done either manually by a trained operator or by an automatic system. But all automatic commercial systems are based on video cameras with image recognition system, which are very expensive.
  • the novelty of this system is that it is based on a laser reader system used in CD players and allows micrometer resolution.
  • the reading system is fixed and it is the wafer, thanks to the engines of the test station, who moves.
  • the main advantages are its simplicity, which can be adapted to any existing test station and is very cheap. It also allows the reading of bar microcodes, containing relevant information of each chip.
  • the system object of this invention is designed to be incorporated into a table of measuring tips of wafers, as shown in Figure 1.
  • the reading system composed of a laser diode and a photodiode, together with its optical system, shown in figure 2.
  • This subsystem should be placed on one side where it does not interfere with the measuring tips, but is above the area covered by the wafer. It is mounted on a micrometer screw to adjust its position on the Z axis depending on the thickness of the wafer.
  • a system with a micromotor could also be used to make the position adjustment automatic.
  • the marks that have to be put on the wafer can be made on any type of material as long as they present a sufficient contrast with the environment. In the field of microelectronics, the most common is to use the level of metallization, on silicon oxide, although it is not limited to this choice.
  • the marks are detected by a difference in the light collected by an array of photodiodes that comes from a laser diode and that is reflected on the wafer surface.
  • the system can operate in ambient light, although the contrast is reduced.
  • FIG. 1 Tip table for measuring wafers with the built-in barcode reader.
  • the tip table consists of a fixed system (1).
  • a support (2) moves in a motorized manner on the X and Y axes. This support has a moving part along the Z axis (3).
  • the wafer is fixed with circuits (4).
  • This wafer is the one that contains the circuits to be measured, along with the bar microcodes and alignment marks.
  • metal tips (5) that are the ones that make the electrical contact and a microscope (6).
  • the system object of this invention composed of a micrometric screw with movement in the Z axis (7) and the laser diode and photodiode system (8).
  • Figure 2 Bar code reading system and other marks on the wafers. It consists of laser diode (1), control photodiode (2), laser diode lenses (3), diffraction network (4), cylindrical lens (5), polarized prism (6), photodiode matrix (7), lens collimation (8), quarter wave polarized filter (9), objective (11).
  • the reading surface is represented in (12) and the vertical and lateral movement of the focus in (13).
  • Figure 3 Profile view (1) and plan view (2) of the photodiode matrix (7) of Figure 2.
  • A, B, C, D, E and F are the six photodiodes.
  • Figure 4. Detail of the three-ray focusing and positioning system, achieved by the prism (6) and the cylindrical lens (5) of Figure 2, using the six photodiode matrix of Figure 3.
  • A, B, C, D, E and F are the six photodiodes.
  • Focus circuit of the laser diode It consists of oscillator circuit (1), counter circuit (2), 8 or 12 bit bus (3), digital-analog converter circuit (4), reference voltage or threshold (5), comparator circuit (6), matrix of photodiodes (7), laser emitting diode (8) and focusing coils (9) that controls the movement on the Z axis of the focusing lenses.
  • the wafer is represented with the marks to be read.
  • Figure 6 Schematic of the circular crown used to find the origin of the wafer.
  • P is the point, arbitrary, when you begin to read the marks on the wafer
  • ⁇ x is the distraction traveled from when you enter the crown until you leave it
  • R is the radius of the crown.
  • the system consists of an external laser reader, which is placed on the tip table and a control electronics, which is connected to the external laser reader and to a computer through an appropriate interface.
  • the external laser reader (8) of figure 1 is fastened by a micrometric screw, (7) of figure 1, in an area of the tip table, to allow vertical adjustment of the initial position, which will depend on the thickness of the wafers.
  • the laser reader is a standard reader used in CD reading equipment.
  • the external reader is connected to an interface as shown in figure 5.
  • the necessary signals are the outputs of the photodiode array, the polarization of the diode laser and polarization of the focus coils on the one hand and the connection to the computer by the desired port on the other.
  • the algorithm of finding the center of the motif, and therefore, the coordinate reference of the wafer is as follows: i) Place the laser beam in any area near the outside of the circular crown, ii) Move the beam of horizontal way until the crown is detected. Fix the origin momentarily at this point. iii) Move the wafer so that the beam follows the horizontal to the other end of the crown. iv) Calculate the distance traveled and apply the following formula:
  • R external radius of the circular crown.
  • two circular crowns are used, such as the algorithm of finding the origin, separated by a distance c, as shown in Figure 7. Both centers are located with the previous algorithm and the angle they form is calculated directly.
  • the bar code reading is limited to moving the wafer under the laser reader and measuring the width of the light and dark areas, later this information is transformed into the sequence of bars of different widths and the written text is decoded .
  • the system can work with any type of barcode.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un système de lecture de marques de micro-dimension dans des tranches de semi-conducteur, adaptable aux stations d'essai de mesure desdites marques. Celles-ci peuvent être des codes barres contenant des informations ou des marques spéciales pour l'alignement des axes des puces dans la tranche par rapport aux axes de mouvement X et Y de la station. Le système est constitué d'un système lecteur laser du type de ceux utilisés dans les lecteurs de CD et permet la résolution des micromètres. Le système de lecture est fixe, et c'est la tranche qui se déplace grâce aux moteurs de la station d'essai. Les avantages de ce système sont sa simplicité, sa capacité d'adaptation à n'importe quelle station d'essai existante, et son coût réduit. Il permet, de plus, la lecture de micro-codes barres contenant des informations associées à chaque puce.
PCT/ES2003/000207 2002-05-16 2003-05-09 Systeme d'alignement de tranches et de lecture de micro-codes barres et de marques dans des puces laser WO2003098683A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003236212A AU2003236212A1 (en) 2002-05-16 2003-05-09 System for aligning wafers and for reading micro bar-codes and marks on chips using laser

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
ESP200201114 2002-05-16
ES200201114A ES2195786B1 (es) 2002-05-16 2002-05-16 Sistema de alineamiento de obleas y de lectura de microcodigos de barras y de marcas en chips con laser.

Publications (1)

Publication Number Publication Date
WO2003098683A1 true WO2003098683A1 (fr) 2003-11-27

Family

ID=29433277

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/ES2003/000207 WO2003098683A1 (fr) 2002-05-16 2003-05-09 Systeme d'alignement de tranches et de lecture de micro-codes barres et de marques dans des puces laser

Country Status (3)

Country Link
AU (1) AU2003236212A1 (fr)
ES (1) ES2195786B1 (fr)
WO (1) WO2003098683A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108780788A (zh) * 2016-02-16 2018-11-09 Eo科技股份有限公司 一种雷射标记装置及雷射标记方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0243520A1 (fr) * 1986-04-29 1987-11-04 Ibm Deutschland Gmbh Alignement masque-substrat interférométrique
JPH01117335A (ja) * 1987-10-30 1989-05-10 Tokyo Electron Ltd プローブ装置
US5705320A (en) * 1996-11-12 1998-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Recovery of alignment marks and laser marks after chemical-mechanical-polishing
US5733711A (en) * 1996-01-02 1998-03-31 Micron Technology, Inc. Process for forming both fixed and variable patterns on a single photoresist resin mask
JPH11135390A (ja) * 1997-10-27 1999-05-21 Sony Corp Ｉｄが印字されているウェーハ、半導体デバイスの製造方法および半導体デバイスの製造装置
JP2002246446A (ja) * 2001-02-20 2002-08-30 Assist Japan Kk ウェハアライメント装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0243520A1 (fr) * 1986-04-29 1987-11-04 Ibm Deutschland Gmbh Alignement masque-substrat interférométrique
JPH01117335A (ja) * 1987-10-30 1989-05-10 Tokyo Electron Ltd プローブ装置
US5733711A (en) * 1996-01-02 1998-03-31 Micron Technology, Inc. Process for forming both fixed and variable patterns on a single photoresist resin mask
US5705320A (en) * 1996-11-12 1998-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Recovery of alignment marks and laser marks after chemical-mechanical-polishing
JPH11135390A (ja) * 1997-10-27 1999-05-21 Sony Corp Ｉｄが印字されているウェーハ、半導体デバイスの製造方法および半導体デバイスの製造装置
JP2002246446A (ja) * 2001-02-20 2002-08-30 Assist Japan Kk ウェハアライメント装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 13, no. 356 (E - 803) 9 August 1989 (1989-08-09) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108780788A (zh) * 2016-02-16 2018-11-09 Eo科技股份有限公司 一种雷射标记装置及雷射标记方法

Also Published As

Publication number Publication date
ES2195786A1 (es) 2003-12-01
ES2195786B1 (es) 2005-03-16
AU2003236212A1 (en) 2003-12-02

Similar Documents

Publication Publication Date Title
ES2359402T3 (es) Sistema modular para generar un plano de referencia por láser.
US6494122B2 (en) Alignment method and apparatus for aligning cutting blade
KR102192041B1 (ko) 마크 검출 방법
US7221177B2 (en) Probe apparatus with optical length-measuring unit and probe testing method
US8947678B2 (en) Method for correcting three-dimensional measurements of a spherically mounted retroreflector
US20140313521A1 (en) Method for correcting a spherically mounted retroreflector when resetting a distance meter
JP5385794B2 (ja) チップ搭載方法およびチップ搭載装置
US9239238B2 (en) Method for correcting a 3D measurement of a spherically mounted retroreflector on a nest
KR950033489A (ko) 프로우브 시스템 및 프로우브 방법
US20150285615A1 (en) Spherically mounted retroreflector and method to minimize measurement error
CN101164140A (zh) 用于在激光标刻系统中对准晶片加工系统的系统和方法
US9297849B2 (en) Test system and method for wafer including optical component
JP4697843B2 (ja) アライメント装置及び加工装置
US20150285903A1 (en) Method for finding a home reference distance using a spherically mounted retroreflector
ES2346376T3 (es) Dispositivo de identificacion para la deteccion lineal de un codigo dispuesto en un plano del objeto.
CN104034662B (zh) 一种用于拉曼光谱法测量晶圆残余应力的精确定位工具-定位仪
JP2019520589A (ja) 結像機器および測定装置用の微小位置標定方法および装置
KR102645229B1 (ko) 검사 지그 및 검사 방법
US7527186B2 (en) Method and apparatus for mapping a position of a capillary tool tip using a prism
CN112185870A (zh) 高精度键合头定位方法及设备
CN108701678B (zh) 一种标记位置校正装置及方法
WO2003098683A1 (fr) Systeme d'alignement de tranches et de lecture de micro-codes barres et de marques dans des puces laser
ES2398661T3 (es) Interferómetro con una disposición especular para medir un objeto de medición
JP2015164750A (ja) サブチャックテーブルの原点位置検出方法
US10171713B1 (en) Method of aligning lens optical axis to image sensor plane without active alignment

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NI NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP