WO2003092256A2 - Procede et systeme de projection a filtrage optique - Google Patents

Procede et systeme de projection a filtrage optique Download PDF

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Publication number
WO2003092256A2
WO2003092256A2 PCT/EP2003/004012 EP0304012W WO03092256A2 WO 2003092256 A2 WO2003092256 A2 WO 2003092256A2 EP 0304012 W EP0304012 W EP 0304012W WO 03092256 A2 WO03092256 A2 WO 03092256A2
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WO
WIPO (PCT)
Prior art keywords
angle
imaging system
filter
plane
selective
Prior art date
Application number
PCT/EP2003/004012
Other languages
German (de)
English (en)
Other versions
WO2003092256A3 (fr
Inventor
Christian Wagner
Martin Brunotte
Volker Gräschus
Paul Gräupner
Original Assignee
Carl Zeiss Smt Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Ag filed Critical Carl Zeiss Smt Ag
Priority to AU2003224088A priority Critical patent/AU2003224088A1/en
Publication of WO2003092256A2 publication Critical patent/WO2003092256A2/fr
Publication of WO2003092256A3 publication Critical patent/WO2003092256A3/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70308—Optical correction elements, filters or phase plates for manipulating imaging light, e.g. intensity, wavelength, polarisation, phase or image shift

Definitions

  • the invention relates to a method for imaging a pattern arranged in an object plane of an optical imaging system into the image plane of the imaging system and to an imaging system for carrying out the method.
  • the imaging process includes optical filtering of the light passing through the imaging system.
  • Preferred areas of application of the invention are projection objectives for microlithography.
  • Projection lenses for microlithography are used in projection exposure systems for the production of
  • Imaging systems serve to pattern samples of photomasks or graticules, which are arranged in the object plane of the imaging system and are generally referred to as masks or reticles, on an object arranged in the image plane of the imaging system and coated with a light-sensitive layer with the highest resolution in a reducing size Map scale.
  • a pupil filter is a space filter which is arranged in the region of a pupil plane of an optical imaging system.
  • the pupil plane is one to the object plane and to the other
  • Image plane Fourier-transformed plane This means in particular that a certain angle of incidence of light in the image plane of the
  • Projection lens corresponds to a certain radial coordinate in the pupil plane.
  • the area of the pupil can thus influence the angular spectrum of the
  • pupil filters are optimized for certain reticle structures (e.g. contact holes, lattice structures with one or more directions of periodicity). Since reticles of different structures are to be imaged with a projection lens, it is desirable to be able to use pupil filters with different effects.
  • US Pat. No. 5,610,684 discloses a projection objective which has an exchange device for exchanging pupil filters, which can optionally be introduced into the region of the pupil plane of the projection objective.
  • Exchange device comprises displacement devices for displacing lenses close to the pupil in order to provide sufficient space for the exchange process.
  • EP 0 638 847 B1 (corresponding to US Pat. No. 5,448,336) shows a projection objective with a pupil filter exchange device, the operation of which does not require the movement of lenses close to the pupil.
  • the technical implementation of such exchange devices is very complex in the case of high-performance projection lenses, since there are narrow tolerances for the material, fit and thickness of the optical components used and high demands are placed on the positioning accuracy and possibly gas tightness.
  • the invention is based on the object of an imaging method with optical filtering and a corresponding optical imaging system to create, which allow the use of optical filters with different effects in a simple manner.
  • the invention proposes a method with the features of claim 1 and an optical imaging system with the features of claim 9.
  • Advantageous further developments are specified in the dependent claims. The wording of all claims is incorporated by reference into the content of the description.
  • the method according to the invention for imaging a pattern attached in the object plane of an optical imaging system into the image plane of the imaging system uses an imaging system in which, between the object plane and the image plane, a plurality of optical elements arranged along an optical axis and at least one to a field plane of the imaging system Fourier- transformed pupil plane are arranged.
  • optical filtering of the light passing through the imaging system is carried out. The process includes the following steps:
  • Imaging system as a function of incidence angles in the field level; Angle-selective filtering according to the angle-dependent filter function in the area of the field level.
  • the intervention in the beam path required for the optical filtering which corresponds to pupil filtering as a result, is not carried out in the area of a pupil of the imaging system, but in an associated area near the field, i.e. in a field plane transformed to the Fourier pupil or in close to this field level.
  • the knowledge is used that the angular spectrum of the rays running to the image plane on a surface of the projection objective lying close to the image plane can be directly transmitted in pupil coordinates.
  • a certain angle of incidence or angle of incidence in the image plane corresponds to a certain radial coordinate in the pupil plane. Therefore, an angle-selective filtering in an area close to the field can have the same effect as a location-selective filtering in the area of the pupil.
  • Areas in the vicinity of the field are in particular those areas in which the marginal jet height is lower and significantly smaller than the main jet height.
  • the edge jet height can be, for example, a maximum of 10% or a maximum of 20% of the main jet height.
  • the marginal ray height is the ray height of marginal rays that run from the field center to the aperture edge; the main beam height is the beam height of main beams that run at the field edge and intersect the optical axis in the area of the aperture.
  • the areas near the field are in particular the area of the image plane, the area of the object plane and, in the case of a system with at least one real intermediate image, the area of the intermediate image plane.
  • the angle-selective filtering according to the invention has the effect that the radiation impinging on an optical filter element differs from the radiation traveling away from the filter element in a defined manner as a function of the angle of incidence of the radiation, the difference being describable with the aid of the filter function.
  • An angle-selective filter element can be designed as a transmission filter be to act on the radiation passing through the filter element. It is also possible to design angle-selective filter elements as reflection filters, which, for example, reflect light that strikes at large angles of incidence more strongly than light that strikes at small angles of incidence. Preferred embodiments of angle-selective filter elements are transmission filters with a dependence on the incidence angle of the incident radiation
  • This field level can be the image level or the object level, in systems with a real intermediate image also an intermediate image level.
  • Embodiments are particularly advantageous in which the angle-selective filtering takes place in the area of a field plane of the imaging system in such a way that a transmittance is smaller for small incidence angles than for large incidence angles.
  • the transmittance can increase substantially continuously from small angles of incidence to large angles of incidence.
  • There small incidence angles in the area close to the field correspond to rays that run near the optical axis in the area of the pupil, this angle dependency corresponds in effect to a pupil filter that has a lower transmission in the area of the optical axis than in the outer peripheral areas of the pupil.
  • This corresponds to a pupil apodization with a darkening of the central region near the axis, as is advantageous, for example, to increase the depth of field when imaging contact holes.
  • the degree of reflection could increase from small to large incidence angles.
  • the angle-selective filtering can be carried out in any area sufficiently close to a field level.
  • the angle-selective filtering can be carried out, for example, in or near an intermediate image plane. It is also possible to carry out the filtering in the area of the object level.
  • a corresponding coating can be provided on an entry plate or a first lens element.
  • a corresponding filter layer can also be attached to the pellicle. It is expedient if the angle-selective filtering is carried out in the area of the image plane, so that the radiation changed by filtering no longer has to pass through any optical components of the imaging system.
  • the angle spectrum desired for the location of the image can be set with great accuracy. It is particularly expedient if the angle-selective filter is attached to a last optical element of the imaging system closest to the image plane or is formed by this last optical element.
  • the angle-selective filter can comprise an interference filter layer, which is on one of the image planes facing, last optical surface of the imaging system is attached.
  • an angle-selective coating which effects the pupil apodization, can be attached to the image-side exit surface of an exchangeable end element. It can be an exchangeable, plane-parallel end plate.
  • the effective filter layer of the filter is applied to a flat or only slightly curved surface in order to ensure a uniform, angle-selective effect over the entire filter surface.
  • the angle-selective filter element has its own socket, which can be detachably connected to socket elements for the optical elements of the imaging system, for example with the aid of screws. It is also possible for the angle-selective filter element, as the last optical element of the imaging system, to be connected to the penultimate optical element so that it can be replaced and replaced. The connection can be made, for example, by starting. This type of attachment, which is particularly favorable for replacing optical elements, is described, for example, in EP 1 063 551, the disclosure content of which is made the content of this description by reference.
  • the invention enables interchangeable and / or interchangeable filter elements to be arranged on the outside of the projection lens or in the vicinity thereof in such a way that it can be replaced without interfering with the interior of the imaging system.
  • the invention can be used particularly advantageously in the case of dioptric, catadioptric or catoptical projection objectives for microlithography.
  • An angle-selective filtering in the immediate vicinity of the wafer level (image level) is preferred.
  • the filtering can also be carried out in the area of another field level, for example the object level or an intermediate image level which may be present.
  • the invention is also suitable for other imaging systems, for example microscopes.
  • FIG. 1 is a schematic illustration of a microlithography projection exposure system designed as a wafer stepper with a projection objective, which is equipped with an embodiment of an angle-selective filter element according to the invention
  • FIG. 2 is a schematic illustration of the end region of the projection objective according to FIG. 1 near the wafer with explanations of the filter function of preferred, angle-selective filter elements;
  • FIG. 3 is a diagram illustrating the transmittance and reflectance of an embodiment of a filter layer according to the invention as a function of the angle of incidence for a wavelength of 157 nm.
  • 1 schematically shows a microlithography projection exposure system in the form of a wafer stepper 1, which is provided for the production of highly integrated semiconductor components.
  • the projection exposure system comprises an excimer laser 2 as the light source, which emits light with a working wavelength ⁇ , which in the example is 157 nm and in other embodiments can also be below or above, for example 193 nm or 248 nm.
  • a downstream lighting system 4 generates a large, sharply delimited and homogeneously illuminated image field which is adapted to the telecentricity requirements of the downstream projection lens 5.
  • the projection lens 5 is a preferred embodiment of an optical imaging system according to the invention.
  • the lighting system has devices for selecting the lighting mode and can be switched, for example, between conventional lighting with a variable degree of coherence, ring field lighting and dipole or quadrupole lighting.
  • a device 6 for holding and manipulating a mask 7 is arranged behind the lighting system so that the mask (reticle) lies in the object plane 8 of the projection objective and can be moved in this plane for scanner operation in a departure direction 9 (y direction) with the aid of a scanner drive is.
  • Behind the mask plane 8 follows the projection lens 5, which acts as a reduction lens and images an image of the mask on a reduced scale, for example on a scale of 1: 4 or 1: 5, onto a wafer 10 covered with a photoresist layer, which is in the image plane 11 of the reduction lens 5 is arranged.
  • the wafer 10 is held by a device 12, which comprises a scanner drive, in order to move the wafer in parallel with the reticle 7. All systems are controlled by a control unit 13.
  • the projection lens 5 is a catadioptric projection lens with geometric beam splitting. Between its object plane (mask plane 8) and its image plane (wafer plane 11), it has a catadioptric first objective part 15 with a concave mirror 16, a geometrical beam splitter 17 and behind this a dioptric second objective part 18.
  • the beam splitter 17, designed as a mirror prism, has a flat first mirror surface 19 for deflecting the radiation coming from the object plane to the concave mirror 16 and a second mirror surface 20 for deflecting the radiation reflected by the concave mirror in the direction of the purely refractive second objective part 18.
  • the catadioptric objective part is designed such that it is at a distance behind the second deflecting mirror 20 in the region an intermediate image plane 21 is a freely accessible real intermediate image, which is imaged into the image plane 11 by the subsequent lenses of the dioptric lens part.
  • the optical axis 24 of the projection objective is folded on the mirror surfaces 19, 16 and 20.
  • the last optical element of the projection lens 5 closest to the image plane 11 is formed by a plane-parallel end plate 30, which is interchangeably attached to the lower end of the projection lens, protects the projection lens against contamination from the photoresist applied to the wafer and at the same time also seals the lens ,
  • the end plate 30, which is explained in more detail below, is designed as an angle-selective transmission filter element and has a plane-parallel substrate 31 made of a material which is transparent to the ultraviolet light used, for example quartz glass or calcium fluoride.
  • a multilayer interference filter layer 32 is applied to the flat surface facing the wafer. This filter layer is in one Distance of a few millimeters (working distance) in the immediate vicinity of the image plane.
  • the opposite entrance surface can have an anti-reflective coating.
  • the object plane 8, the intermediate image plane 21 and the image plane 11 are field planes of the imaging system 5 which are optically conjugated to one another. Between these lie plane pupil surfaces which are Fourier-transformed to the reticle plane 8 and the image plane 11. A first, flat pupil surface 3 lies in the region of the imaging concave mirror 16. The pupil plane 22 following the intermediate image plane 21 is freely accessible. The adjustable system diaphragm (not shown) of the projection lens is located in this area.
  • the exposure system 1 is designed to achieve resolutions of 0.1 ⁇ m or below and high throughput rates and has an image-side numerical aperture (NA) between approximately 0.65 and approximately 0.85 or higher.
  • NA image-side numerical aperture
  • the high numerical apertures mean that radiation runs from a large incidence angle range to the image plane 11 in the vicinity of the image plane 11.
  • the angle of incidence ⁇ here is the angle between the direction of incidence 25 of a light beam and the optical axis 24 (FIG. 2).
  • NA 0.8
  • the incidence angles run from 0 ° to approx. 53 °.
  • the angular spectrum of the rays running to the image plane 11 in the vicinity of the image plane 11 can be directly transmitted in pupil coordinates, ie in spatial coordinates in the area of the nearest pupil surface 22. In natural units the pupil is a circle with radius 1.
  • the translation between the angle of incidence ⁇ in the immediate vicinity of the image plane 11 and the pupil radius r p essentially follows the equation
  • NA the numerical aperture of the lens on the image side.
  • the optical filtering described which as a result corresponds to a central obscuration in the area of the pupil 22, is brought about in the embodiment shown by the end plate 30 attached close to the field, which is designed as an angle-selective filter element.
  • An optical filter is referred to here as an angle-selective filter element, whose filter function is specifically optimized as a function of the angle of incidence of the radiation impinging on the filter.
  • the angle-dependent filter function is calculated according to the specification of a desired pupil filter function F p for the area of the pupil 22.
  • an angle-selective filtering is carried out in the immediate vicinity of the field plane 11 with the aid of the filter layer 32 of the filter element 30.
  • the transmission characteristic of a suitable, angle-selective filter element to be installed close to the field is generally such that the transmittance is smaller for small incidence angles (axis-parallel or almost axis-parallel radiation) than for large incidence angles (oblique radiation).
  • the transmittance can be in the range of small incidence angles, for example between 0 ° and approx.
  • the transmittance increases from small to large incidence angles continuously, for example more or less linearly.
  • the transmittance should increase to 80% or more in order to have sufficient light intensity overall for image formation. Since small incidence angles in the vicinity of the wafer correspond to axes near the axis, this angle selectivity corresponds to a pupil filter with a comparatively low transmission in the region of the optical axis.
  • the filter effect required for central pupil obscuration with low transmission for small and high transmission for large incidence angles differs significantly from the effect of conventional antireflection coatings, which are usually optimized in such a way that they cause a strong reflection reduction (and thus transmission increase) at least for small incidence angles , with the reflection-reducing effect normally decreasing at higher incidence angles, so that for higher incidence angles there is less transmission than at small incidence angles.
  • the filter element 30 has a plane-parallel, plate-shaped substrate 31, which consists of crystalline calcium fluoride and, in other embodiments, can also consist of a different crystalline fluoride material or synthetic quartz glass.
  • a multi-layer filter layer 32 is applied with several layers one above the other, each consisting of a dielectric material that is transparent to the ultraviolet light used.
  • the layer materials are alternately high refractive index and low computational, whereby a high refractive index material im Compared to the refractive index of the other layer material has a higher refractive index.
  • Lanthanum fluoride (LaF 3 ) is used as the high-index material and magnesium fluoride (MgF 2 ) as the low-index material.
  • the layer system is laser stable up to at least 2W / cm 2 with respect to the radiation used, in the example has thirty-three layers and a total thickness of approx. 736nm.
  • the layers are applied to the substrate 31 by physical vapor deposition (PVD) in vacuum. Any other suitable technique can also be used for the assignment.
  • the layer structure of a preferred layer system can be represented with the following notation.
  • S denotes the substrate, a vertical line (
  • the letter (L) stands for a low refractive index material.
  • AIF 3 or Na3AIF 6 low refractive index
  • 157 nm for 193 nm also Al 2 0 3 (high refractive index) or Si0 2 (low refractive index).
  • the essential optical properties of the layer system shown are explained using the diagram in FIG. 3.
  • the transmittance T (in%) and the reflectance R (in%) of the layer system are shown there as a function of the incidence angle ⁇ of the incident electromagnetic radiation.
  • the pupil apodization can be influenced in a radially symmetrical manner in such a way that the pupil is darkened in the center and there is a high transmission of more than 80% in the edge region.
  • pupil spatial frequencies below a certain radius limit value corresponding to rays with a small angle of incidence in the area near the image plane 11
  • a certain radius limit value corresponding to rays with a small angle of incidence in the area near the image plane 11
  • undeflected light can be blocked.
  • the more diffracted light occurring at the edge of the pupil can pass largely uninhibited through the optical system, since the transmission is high for the edge region of the pupil (correspondingly large incidence angles in the region near the wafer plane 11).
  • the optical filtering which is advantageous for an expansion of the process window, can be carried out with a filter element 30, which can be easily replaced without interfering with the interior of the optical system, since it is the last optical element of the projection objective.
  • a filter element 30 can be easily replaced without interfering with the interior of the optical system, since it is the last optical element of the projection objective.
  • It can optionally have a separate frame, which can be detachably connected to frames of the objective lenses, for example by means of screws.
  • a frame-free attachment to the exit surface of a last lens or plate of the projection lens is also possible.
  • An exchangeable filter element offers the possibility to easily adapt the filter function to the structure to be imaged.
  • the filtering can optionally also be carried out directly on the substrate to be exposed. For this purpose, for example, a filter layer with a corresponding effect can be applied to the photoresist.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

L'invention concerne un système de reproduction optique qui sert à reproduire, dans le plan image de ce dernier, un modèle disposé dans un plan objet dudit système de reproduction. Une pluralité d'éléments optiques et au moins un plan pupille sont disposés entre le plan objet et le plan image, et ledit plan pupille est transformé en plans de champ du système de reproduction au moyen d'une transformation de Fourier. Un filtrage optique à sélectivité angulaire est effectué dans la zone des plans de champ à l'aide d'un élément de filtrage optique dont la fonction de filtrage, qui présente une dépendance angulaire, est calculée en tant que fonction d'une fonction de filtrage à dépendance positionnelle souhaitée pour la zone de la pupille.
PCT/EP2003/004012 2002-04-24 2003-04-17 Procede et systeme de projection a filtrage optique WO2003092256A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003224088A AU2003224088A1 (en) 2002-04-24 2003-04-17 Projection method and projection system comprising an optical filtering process

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10218989.7 2002-04-24
DE10218989A DE10218989A1 (de) 2002-04-24 2002-04-24 Projektionsverfahren und Projektionssystem mit optischer Filterung

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WO2003092256A2 true WO2003092256A2 (fr) 2003-11-06
WO2003092256A3 WO2003092256A3 (fr) 2004-09-16

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DE (1) DE10218989A1 (fr)
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Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005064407A2 (fr) * 2003-12-22 2005-07-14 Koninklijke Philips Electronics N.V. Dispositif de projection lithographique, procede et substrat destines a la fabrication de dispositifs electroniques et dispositif electronique ainsi obtenu
WO2005069078A1 (fr) * 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Dispositif d'exposition par projection microlithographique avec objectif de projection par immersion
WO2007009543A1 (fr) * 2005-07-18 2007-01-25 Carl Zeiss Smt Ag Pellicule destinee a etre utilisee dans un appareil d'exposition de projection microlithographique
WO2007028553A1 (fr) 2005-09-05 2007-03-15 Carl Zeiss Sms Gmbh Procede pour determiner une repartition d'intensites dans le plan focal d'une installation d'exposition par projection
EP1843201A1 (fr) * 2006-04-07 2007-10-10 Shin-Etsu Chemical Co., Ltd. Pellicule pour lithographie
WO2009018911A1 (fr) 2007-08-03 2009-02-12 Carl Zeiss Smt Ag Objectif de projection pour microlithographie, appareil d'exposition par projection, procédé d'exposition par projection et plaque de correction optique
US7548387B2 (en) 2005-04-06 2009-06-16 Carl Zeiss Smt Ag Optical imaging device
US8605257B2 (en) 2004-06-04 2013-12-10 Carl Zeiss Smt Gmbh Projection system with compensation of intensity variations and compensation element therefor
US9146475B2 (en) 2010-09-30 2015-09-29 Carl Zeiss Smt Gmbh Projection exposure system and projection exposure method
DE102017208340A1 (de) 2017-05-17 2018-11-22 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsobjektiv mit Einstellung der Pupillentransmission

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JP4599936B2 (ja) 2004-08-17 2010-12-15 株式会社ニコン 照明光学装置、照明光学装置の調整方法、露光装置、および露光方法
JP5097119B2 (ja) 2005-11-03 2012-12-12 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置
JP5299937B2 (ja) 2006-05-18 2013-09-25 カール・ツァイス・エスエムティー・ゲーエムベーハー 光近接効果を補正する方法
EP1906251A1 (fr) 2006-09-26 2008-04-02 Carl Zeiss SMT AG Procédé et système d'exposition par projection

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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005064407A2 (fr) * 2003-12-22 2005-07-14 Koninklijke Philips Electronics N.V. Dispositif de projection lithographique, procede et substrat destines a la fabrication de dispositifs electroniques et dispositif electronique ainsi obtenu
WO2005064407A3 (fr) * 2003-12-22 2006-02-23 Koninkl Philips Electronics Nv Dispositif de projection lithographique, procede et substrat destines a la fabrication de dispositifs electroniques et dispositif electronique ainsi obtenu
WO2005069078A1 (fr) * 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Dispositif d'exposition par projection microlithographique avec objectif de projection par immersion
US7663735B2 (en) 2004-01-19 2010-02-16 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
US8605257B2 (en) 2004-06-04 2013-12-10 Carl Zeiss Smt Gmbh Projection system with compensation of intensity variations and compensation element therefor
US7548387B2 (en) 2005-04-06 2009-06-16 Carl Zeiss Smt Ag Optical imaging device
WO2007009543A1 (fr) * 2005-07-18 2007-01-25 Carl Zeiss Smt Ag Pellicule destinee a etre utilisee dans un appareil d'exposition de projection microlithographique
WO2007028553A1 (fr) 2005-09-05 2007-03-15 Carl Zeiss Sms Gmbh Procede pour determiner une repartition d'intensites dans le plan focal d'une installation d'exposition par projection
US7961297B2 (en) 2005-09-05 2011-06-14 Carl Zeiss Sms Gmbh Method for determining intensity distribution in the image plane of a projection exposure arrangement
JP2009507251A (ja) * 2005-09-05 2009-02-19 カール ツアイス エスエムエス ゲゼルシャフト ミット ベシュレンクテル ハフツング 投影露光装置の結像面中の強度分布を決定する方法
KR101546972B1 (ko) * 2005-09-05 2015-08-24 칼 짜이스 에스엠에스 게엠베하 투사노출장치의 이미지면에서 강도 분포 결정방법
EP1843201A1 (fr) * 2006-04-07 2007-10-10 Shin-Etsu Chemical Co., Ltd. Pellicule pour lithographie
WO2009018911A1 (fr) 2007-08-03 2009-02-12 Carl Zeiss Smt Ag Objectif de projection pour microlithographie, appareil d'exposition par projection, procédé d'exposition par projection et plaque de correction optique
US8228483B2 (en) 2007-08-03 2012-07-24 Carl Zeiss Smt Gmbh Projection objective for microlithography, projection exposure apparatus, projection exposure method and optical correction plate
US9146475B2 (en) 2010-09-30 2015-09-29 Carl Zeiss Smt Gmbh Projection exposure system and projection exposure method
DE102017208340A1 (de) 2017-05-17 2018-11-22 Carl Zeiss Smt Gmbh Projektionsbelichtungsverfahren und Projektionsobjektiv mit Einstellung der Pupillentransmission
WO2018210691A1 (fr) 2017-05-17 2018-11-22 Carl Zeiss Smt Gmbh Procédé d'exposition par projection et lentille de projection avec réglage de la transmission à la pupille
US11143967B2 (en) 2017-05-17 2021-10-12 Carl Zeiss Smt Gmbh Projection exposure method and projection lens with setting of the pupil transmission
US11906904B2 (en) 2017-05-17 2024-02-20 Carl Zeiss Smt Gmbh Projection exposure method and projection lens with setting of the pupil transmission

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AU2003224088A1 (en) 2003-11-10
DE10218989A1 (de) 2003-11-06
WO2003092256A3 (fr) 2004-09-16
AU2003224088A8 (en) 2003-11-10

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