WO2003085727A3 - Puce a semiconducteurs comportant une couche de protection et procede de fabrication - Google Patents
Puce a semiconducteurs comportant une couche de protection et procede de fabrication Download PDFInfo
- Publication number
- WO2003085727A3 WO2003085727A3 PCT/DE2003/001149 DE0301149W WO03085727A3 WO 2003085727 A3 WO2003085727 A3 WO 2003085727A3 DE 0301149 W DE0301149 W DE 0301149W WO 03085727 A3 WO03085727 A3 WO 03085727A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- protective layer
- semiconductor chip
- production method
- corresponding production
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000011241 protective layer Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3185—Partial encapsulation or coating the coating covering also the sidewalls of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01052—Tellurium [Te]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
- Dicing (AREA)
Abstract
L'invention s'applique à la connexion par billes de puces à semiconducteurs, une couche de protection (7) servant à la protection contre les contraintes et dégâts mécaniques et à l'isolation électrique étant appliquée sur l'arrière de la puce à semiconducteurs (2). Ladite couche de protection peut aussi être appliquée sur les bords (8) de la puce à semiconducteurs. Selon l'invention, ladite couche de protection peut être appliquée en amont du processus d'assemblage ou lors de la fixation de la puce à semiconducteurs à l'envers sur un support (1).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10215355.8 | 2002-04-08 | ||
DE10215355A DE10215355B4 (de) | 2002-04-08 | 2002-04-08 | Verfahren zur Flip-Chip-Montage von Halbleiterchips |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003085727A2 WO2003085727A2 (fr) | 2003-10-16 |
WO2003085727A3 true WO2003085727A3 (fr) | 2004-08-05 |
Family
ID=28684817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2003/001149 WO2003085727A2 (fr) | 2002-04-08 | 2003-04-08 | Puce a semiconducteurs comportant une couche de protection et procede de fabrication |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE10215355B4 (fr) |
TW (1) | TW200305263A (fr) |
WO (1) | WO2003085727A2 (fr) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5645056A (en) * | 1979-09-21 | 1981-04-24 | Hitachi Ltd | Manufacture of semiconductor device |
US4722130A (en) * | 1984-11-07 | 1988-02-02 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
EP1014444A1 (fr) * | 1999-05-14 | 2000-06-28 | Siemens Aktiengesellschaft | Circuit intégré avec une couche de protection et sa méthode de fabrication |
US20010018229A1 (en) * | 2000-02-28 | 2001-08-30 | Nbc Corporation | Semiconductor device and method for fabricating same |
US20010033016A1 (en) * | 2000-02-14 | 2001-10-25 | Masato Sumikawa | Semiconductor device and method of manufacturing the same |
US20020014661A1 (en) * | 2000-07-25 | 2002-02-07 | Fujitsu Limited | Method of manufacturing semiconductor devices by dividing wafer into chips and such semiconductor devices |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08204497A (ja) * | 1995-01-26 | 1996-08-09 | Murata Mfg Co Ltd | 弾性表面波装置 |
JPH11102985A (ja) * | 1997-09-26 | 1999-04-13 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US6023094A (en) * | 1998-01-14 | 2000-02-08 | National Semiconductor Corporation | Semiconductor wafer having a bottom surface protective coating |
US6075290A (en) * | 1998-02-26 | 2000-06-13 | National Semiconductor Corporation | Surface mount die: wafer level chip-scale package and process for making the same |
JP2001085560A (ja) * | 1999-09-13 | 2001-03-30 | Sharp Corp | 半導体装置およびその製造方法 |
-
2002
- 2002-04-08 DE DE10215355A patent/DE10215355B4/de not_active Expired - Fee Related
-
2003
- 2003-03-03 TW TW092104462A patent/TW200305263A/zh unknown
- 2003-04-08 WO PCT/DE2003/001149 patent/WO2003085727A2/fr not_active Application Discontinuation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5645056A (en) * | 1979-09-21 | 1981-04-24 | Hitachi Ltd | Manufacture of semiconductor device |
US4722130A (en) * | 1984-11-07 | 1988-02-02 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
EP1014444A1 (fr) * | 1999-05-14 | 2000-06-28 | Siemens Aktiengesellschaft | Circuit intégré avec une couche de protection et sa méthode de fabrication |
US20010033016A1 (en) * | 2000-02-14 | 2001-10-25 | Masato Sumikawa | Semiconductor device and method of manufacturing the same |
US20010018229A1 (en) * | 2000-02-28 | 2001-08-30 | Nbc Corporation | Semiconductor device and method for fabricating same |
US20020014661A1 (en) * | 2000-07-25 | 2002-02-07 | Fujitsu Limited | Method of manufacturing semiconductor devices by dividing wafer into chips and such semiconductor devices |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 005, no. 103 (E - 064) 3 July 1981 (1981-07-03) * |
Also Published As
Publication number | Publication date |
---|---|
TW200305263A (en) | 2003-10-16 |
WO2003085727A2 (fr) | 2003-10-16 |
DE10215355A1 (de) | 2003-10-30 |
DE10215355B4 (de) | 2004-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8420523B2 (en) | Chip packaging method and structure thereof | |
EP1198005A4 (fr) | Module en semi-conducteur et son procede de montage | |
EP1619722A4 (fr) | Procede de fabrication de capteur optique retroeclaire | |
EP1154471A4 (fr) | Microplaquette semi-conductrice et procede de fabrication | |
EP0820099A3 (fr) | Dispositif semi-conducteur empaqueté et méthode de fabrication associée | |
WO2004112128A3 (fr) | Systeme et procede d'empilement a profil bas | |
EP0981156A3 (fr) | Feuille de protection auto-adhésive pour usage durant le meulage de la face arrière d'une plaquette de semi-conducteur, et sa méthode d'utilisation | |
MY117421A (en) | Integral design features for heatsink attach for electronic packages | |
WO2005034203A3 (fr) | Procede et dispositif pour boitier a double substrat | |
WO2003085737A3 (fr) | Procede et appareil permettant d'empiler de multiples puces dans un boitier de dispositif a semi-conducteurs a connexion par bossages | |
CA2077406A1 (fr) | Methode de connexion de puces de semiconducteur | |
WO2005059967A3 (fr) | Module de boitier a plusieurs puces dote d'un boitier inverse empile au-dessus d'une puce | |
EP1681713A4 (fr) | Feuille de protection de surface et procede de rodage de plaquettes semi-conductrices | |
WO2003054954A3 (fr) | Plan d'integration optique/electrique dans lequel une liaison en cuivre directe est utilisee | |
EP0907204A3 (fr) | Dispositif semiconducteur ayant la taille d'une puce et son procédé de fabrication | |
TWI256719B (en) | Semiconductor device package module and manufacturing method thereof | |
EP0923120A4 (fr) | Procede de production d'un dispositif a semiconducteur | |
TW349233B (en) | Pre-bond cavity air bridge | |
CN100565828C (zh) | 传感器芯片的封胶方法 | |
WO2003098706A3 (fr) | Procede pour fixer une puce a semi-conducteur dans un corps de boitier en matiere plastique, composant optoelectronique a semi-conducteur et procede pour le produire | |
WO2004057668A3 (fr) | Dispositif electronique et son procede de fabrication | |
WO2003041158A3 (fr) | Dispositif de conditionnement pour semi-conducteurs ; fabrication et essai | |
EP1094512A4 (fr) | Procede permettant de sceller par une resine une plaquette a semi-conducteur et bande adhesive permettant de coller des reseaux de conducteurs ou similaires | |
JP2001044310A (ja) | 半導体装置およびその搭載方法 | |
EP1517364A4 (fr) | Dispositif a semiconducteur, et procede de fabrication |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): BR CA CN IL IN JP KR MX RU UA US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |