WO2003056630A3 - Transistor - Google Patents

Transistor Download PDF

Info

Publication number
WO2003056630A3
WO2003056630A3 PCT/EP2002/014679 EP0214679W WO03056630A3 WO 2003056630 A3 WO2003056630 A3 WO 2003056630A3 EP 0214679 W EP0214679 W EP 0214679W WO 03056630 A3 WO03056630 A3 WO 03056630A3
Authority
WO
WIPO (PCT)
Prior art keywords
base layer
emitter
region
doped
layer
Prior art date
Application number
PCT/EP2002/014679
Other languages
English (en)
French (fr)
Other versions
WO2003056630A2 (de
Inventor
Jochen Kraft
Bernhard Loeffler
Georg Roehrer
Original Assignee
Austriamicrosystems Ag
Jochen Kraft
Bernhard Loeffler
Georg Roehrer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Austriamicrosystems Ag, Jochen Kraft, Bernhard Loeffler, Georg Roehrer filed Critical Austriamicrosystems Ag
Priority to EP02793105A priority Critical patent/EP1459387A2/de
Priority to AU2002358786A priority patent/AU2002358786A1/en
Priority to US10/500,079 priority patent/US7629628B2/en
Publication of WO2003056630A2 publication Critical patent/WO2003056630A2/de
Publication of WO2003056630A3 publication Critical patent/WO2003056630A3/de

Links

Classifications

    • H01L29/66272—
    • H01L29/1004—
    • H01L29/732—
    • H01L29/7375—
    • H01L29/36—

Landscapes

  • Bipolar Transistors (AREA)

Abstract

Die Erfindung betrifft einen Transistor mit einem Emitter (1), einem Kollektor (2) und einer Basisschicht (3) bei dem sich der Emitter (1) in die Basisschicht (3) hineinerstreckt, bei dem die Basisschicht (3) einen zwischen Emitter (1) und Kollektor (2) angeordneten intrinsischen Bereich (4) und einen zwischen dem intrinsischen Bereich (4) und einem Basiskontakt (5) verlaufenden extrinsischen Bereich (6) aufweist, bei dem die Basisschicht (3) eine mit einem dreiwertigen Dotierstoff dotierte erste Dotierschicht (7) enthält, die sich in den extrinsischen Bereich (6) erstreckt und die im Bereich des Emitters (1) durch eine fünfwertige Gegendotierung (8) gegendotiert ist. Durch die erste Dotierschicht (7) kann der elektrische Widerstand der Basisschicht (3) in vorteilhafter Weise reduziert werden.
PCT/EP2002/014679 2001-12-27 2002-12-20 Transistor WO2003056630A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02793105A EP1459387A2 (de) 2001-12-27 2002-12-20 Transistor
AU2002358786A AU2002358786A1 (en) 2001-12-27 2002-12-20 Transistor
US10/500,079 US7629628B2 (en) 2001-12-27 2002-12-20 Bipolar transistor including a base layer containing carbon atoms and having three distinct layers being doped with a trivalent substance

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10164176A DE10164176B4 (de) 2001-12-27 2001-12-27 Bipolartransistor
DE10164176.1 2001-12-27

Publications (2)

Publication Number Publication Date
WO2003056630A2 WO2003056630A2 (de) 2003-07-10
WO2003056630A3 true WO2003056630A3 (de) 2003-12-31

Family

ID=7711001

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/014679 WO2003056630A2 (de) 2001-12-27 2002-12-20 Transistor

Country Status (5)

Country Link
US (1) US7629628B2 (de)
EP (1) EP1459387A2 (de)
AU (1) AU2002358786A1 (de)
DE (1) DE10164176B4 (de)
WO (1) WO2003056630A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017059146A1 (en) * 2015-09-29 2017-04-06 Quantum Semiconductor Llc Electrical devices making use of counterdoped junctions

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589409A (en) * 1994-09-02 1996-12-31 National Semiconductor Corporation Fabrication of bipolar transistors with improved output current-voltage characteristics
DE10060584A1 (de) * 2000-01-11 2001-07-19 Mitsubishi Electric Corp Bipolartransistor und Verfahren zu seiner Herstellung
WO2001091162A2 (fr) * 2000-05-23 2001-11-29 Matsushita Electric Industrial Co. Ltd. Transistor bipolaire et son procede de fabrication

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5140400A (en) * 1989-03-29 1992-08-18 Canon Kabushiki Kaisha Semiconductor device and photoelectric converting apparatus using the same
JPH0499328A (ja) * 1990-08-18 1992-03-31 Nec Corp バイポーラトランジスタ
JP2924417B2 (ja) * 1992-02-26 1999-07-26 日本電気株式会社 半導体装置
JP2679639B2 (ja) * 1994-09-12 1997-11-19 日本電気株式会社 半導体装置及びその製造方法
EP0818829A1 (de) * 1996-07-12 1998-01-14 Hitachi, Ltd. Bipolartransistor und dessen Herstellungsverfahren

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589409A (en) * 1994-09-02 1996-12-31 National Semiconductor Corporation Fabrication of bipolar transistors with improved output current-voltage characteristics
DE10060584A1 (de) * 2000-01-11 2001-07-19 Mitsubishi Electric Corp Bipolartransistor und Verfahren zu seiner Herstellung
WO2001091162A2 (fr) * 2000-05-23 2001-11-29 Matsushita Electric Industrial Co. Ltd. Transistor bipolaire et son procede de fabrication
EP1263052A2 (de) * 2000-05-23 2002-12-04 Matsushita Electric Industrial Co., Ltd. Bipolarer transistor und herstellungsmethode

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GRUHLE A ET AL: "THE REDUCTION OF BASE DOPANT OUTDIFFUSION IN SIGE HETEROJUNCTION BIPOLAR TRANSISTORS BY CARBON DOPING", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 75, no. 9, 30 August 1999 (1999-08-30), pages 1311 - 1313, XP000868226, ISSN: 0003-6951 *
OSTEN H J ET AL: "The effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin", ELECTRON DEVICES MEETING, 1997. TECHNICAL DIGEST., INTERNATIONAL WASHINGTON, DC, USA 7-10 DEC. 1997, NEW YORK, NY, USA,IEEE, US, 7 December 1997 (1997-12-07), pages 803 - 806, XP010265625, ISBN: 0-7803-4100-7 *
RYUM B R ET AL: "MBE-GROWN SIGE BASE HBT WITH POLYSILICON-EMITTER AND TISI2 BASE OHMIC LAYER", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 39, no. 11, 1 November 1996 (1996-11-01), pages 1643 - 1648, XP000635613, ISSN: 0038-1101 *

Also Published As

Publication number Publication date
DE10164176B4 (de) 2007-12-27
AU2002358786A8 (en) 2003-07-15
EP1459387A2 (de) 2004-09-22
WO2003056630A2 (de) 2003-07-10
AU2002358786A1 (en) 2003-07-15
US20050127476A1 (en) 2005-06-16
DE10164176A1 (de) 2003-07-10
US7629628B2 (en) 2009-12-08

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