WO2003056630A3 - Transistor - Google Patents

Transistor Download PDF

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Publication number
WO2003056630A3
WO2003056630A3 PCT/EP2002/014679 EP0214679W WO03056630A3 WO 2003056630 A3 WO2003056630 A3 WO 2003056630A3 EP 0214679 W EP0214679 W EP 0214679W WO 03056630 A3 WO03056630 A3 WO 03056630A3
Authority
WO
WIPO (PCT)
Prior art keywords
base layer
emitter
region
doped
layer
Prior art date
Application number
PCT/EP2002/014679
Other languages
English (en)
French (fr)
Other versions
WO2003056630A2 (de
Inventor
Jochen Kraft
Bernhard Loeffler
Georg Roehrer
Original Assignee
Austriamicrosystems Ag
Jochen Kraft
Bernhard Loeffler
Georg Roehrer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Austriamicrosystems Ag, Jochen Kraft, Bernhard Loeffler, Georg Roehrer filed Critical Austriamicrosystems Ag
Priority to US10/500,079 priority Critical patent/US7629628B2/en
Priority to AU2002358786A priority patent/AU2002358786A1/en
Priority to EP02793105A priority patent/EP1459387A2/de
Publication of WO2003056630A2 publication Critical patent/WO2003056630A2/de
Publication of WO2003056630A3 publication Critical patent/WO2003056630A3/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7375—Vertical transistors having an emitter comprising one or more non-monocrystalline elements of group IV, e.g. amorphous silicon, alloys comprising group IV elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

Die Erfindung betrifft einen Transistor mit einem Emitter (1), einem Kollektor (2) und einer Basisschicht (3) bei dem sich der Emitter (1) in die Basisschicht (3) hineinerstreckt, bei dem die Basisschicht (3) einen zwischen Emitter (1) und Kollektor (2) angeordneten intrinsischen Bereich (4) und einen zwischen dem intrinsischen Bereich (4) und einem Basiskontakt (5) verlaufenden extrinsischen Bereich (6) aufweist, bei dem die Basisschicht (3) eine mit einem dreiwertigen Dotierstoff dotierte erste Dotierschicht (7) enthält, die sich in den extrinsischen Bereich (6) erstreckt und die im Bereich des Emitters (1) durch eine fünfwertige Gegendotierung (8) gegendotiert ist. Durch die erste Dotierschicht (7) kann der elektrische Widerstand der Basisschicht (3) in vorteilhafter Weise reduziert werden.
PCT/EP2002/014679 2001-12-27 2002-12-20 Transistor WO2003056630A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/500,079 US7629628B2 (en) 2001-12-27 2002-12-20 Bipolar transistor including a base layer containing carbon atoms and having three distinct layers being doped with a trivalent substance
AU2002358786A AU2002358786A1 (en) 2001-12-27 2002-12-20 Transistor
EP02793105A EP1459387A2 (de) 2001-12-27 2002-12-20 Transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10164176A DE10164176B4 (de) 2001-12-27 2001-12-27 Bipolartransistor
DE10164176.1 2001-12-27

Publications (2)

Publication Number Publication Date
WO2003056630A2 WO2003056630A2 (de) 2003-07-10
WO2003056630A3 true WO2003056630A3 (de) 2003-12-31

Family

ID=7711001

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/014679 WO2003056630A2 (de) 2001-12-27 2002-12-20 Transistor

Country Status (5)

Country Link
US (1) US7629628B2 (de)
EP (1) EP1459387A2 (de)
AU (1) AU2002358786A1 (de)
DE (1) DE10164176B4 (de)
WO (1) WO2003056630A2 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108369900B (zh) * 2015-09-29 2022-11-08 量子半导体有限公司 利用反掺杂结的电器件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589409A (en) * 1994-09-02 1996-12-31 National Semiconductor Corporation Fabrication of bipolar transistors with improved output current-voltage characteristics
DE10060584A1 (de) * 2000-01-11 2001-07-19 Mitsubishi Electric Corp Bipolartransistor und Verfahren zu seiner Herstellung
WO2001091162A2 (fr) * 2000-05-23 2001-11-29 Matsushita Electric Industrial Co. Ltd. Transistor bipolaire et son procede de fabrication

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5140400A (en) * 1989-03-29 1992-08-18 Canon Kabushiki Kaisha Semiconductor device and photoelectric converting apparatus using the same
JPH0499328A (ja) * 1990-08-18 1992-03-31 Nec Corp バイポーラトランジスタ
JP2924417B2 (ja) * 1992-02-26 1999-07-26 日本電気株式会社 半導体装置
JP2679639B2 (ja) * 1994-09-12 1997-11-19 日本電気株式会社 半導体装置及びその製造方法
EP0818829A1 (de) * 1996-07-12 1998-01-14 Hitachi, Ltd. Bipolartransistor und dessen Herstellungsverfahren

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589409A (en) * 1994-09-02 1996-12-31 National Semiconductor Corporation Fabrication of bipolar transistors with improved output current-voltage characteristics
DE10060584A1 (de) * 2000-01-11 2001-07-19 Mitsubishi Electric Corp Bipolartransistor und Verfahren zu seiner Herstellung
WO2001091162A2 (fr) * 2000-05-23 2001-11-29 Matsushita Electric Industrial Co. Ltd. Transistor bipolaire et son procede de fabrication
EP1263052A2 (de) * 2000-05-23 2002-12-04 Matsushita Electric Industrial Co., Ltd. Bipolarer transistor und herstellungsmethode

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
GRUHLE A ET AL: "THE REDUCTION OF BASE DOPANT OUTDIFFUSION IN SIGE HETEROJUNCTION BIPOLAR TRANSISTORS BY CARBON DOPING", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 75, no. 9, 30 August 1999 (1999-08-30), pages 1311 - 1313, XP000868226, ISSN: 0003-6951 *
OSTEN H J ET AL: "The effect of carbon incorporation on SiGe heterobipolar transistor performance and process margin", ELECTRON DEVICES MEETING, 1997. TECHNICAL DIGEST., INTERNATIONAL WASHINGTON, DC, USA 7-10 DEC. 1997, NEW YORK, NY, USA,IEEE, US, 7 December 1997 (1997-12-07), pages 803 - 806, XP010265625, ISBN: 0-7803-4100-7 *
RYUM B R ET AL: "MBE-GROWN SIGE BASE HBT WITH POLYSILICON-EMITTER AND TISI2 BASE OHMIC LAYER", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 39, no. 11, 1 November 1996 (1996-11-01), pages 1643 - 1648, XP000635613, ISSN: 0038-1101 *

Also Published As

Publication number Publication date
EP1459387A2 (de) 2004-09-22
WO2003056630A2 (de) 2003-07-10
US20050127476A1 (en) 2005-06-16
AU2002358786A8 (en) 2003-07-15
DE10164176A1 (de) 2003-07-10
AU2002358786A1 (en) 2003-07-15
US7629628B2 (en) 2009-12-08
DE10164176B4 (de) 2007-12-27

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