WO2003029901A1 - Composition de resine radiosensible positive de type a amplification chimique - Google Patents

Composition de resine radiosensible positive de type a amplification chimique Download PDF

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Publication number
WO2003029901A1
WO2003029901A1 PCT/JP2002/009744 JP0209744W WO03029901A1 WO 2003029901 A1 WO2003029901 A1 WO 2003029901A1 JP 0209744 W JP0209744 W JP 0209744W WO 03029901 A1 WO03029901 A1 WO 03029901A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
irradiation
acid
alkali
dissociating
Prior art date
Application number
PCT/JP2002/009744
Other languages
English (en)
French (fr)
Inventor
Takahiro Hamada
Dong Kwan Lee
Shinji Miyazaki
Original Assignee
Clariant International Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant International Ltd. filed Critical Clariant International Ltd.
Priority to EP02800236A priority Critical patent/EP1434091A4/en
Priority to US10/450,078 priority patent/US20040033438A1/en
Priority to KR10-2003-7008041A priority patent/KR20040043106A/ko
Publication of WO2003029901A1 publication Critical patent/WO2003029901A1/ja

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
PCT/JP2002/009744 2001-09-28 2002-09-24 Composition de resine radiosensible positive de type a amplification chimique WO2003029901A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02800236A EP1434091A4 (en) 2001-09-28 2002-09-24 POSITIVE RADIATION-SENSITIVE RESIN COMPOSITION WITH CHEMICAL REINFORCEMENT
US10/450,078 US20040033438A1 (en) 2001-09-28 2002-09-24 Chemical-amplication-type positive radiation-sensitive resin composition
KR10-2003-7008041A KR20040043106A (ko) 2001-09-28 2002-09-24 화학 증폭형 포지티브형 감방사선성 수지 조성물

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001300457A JP2003107707A (ja) 2001-09-28 2001-09-28 化学増幅型ポジ型感放射線性樹脂組成物
JP2001/300457 2001-09-28

Publications (1)

Publication Number Publication Date
WO2003029901A1 true WO2003029901A1 (fr) 2003-04-10

Family

ID=19121029

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/009744 WO2003029901A1 (fr) 2001-09-28 2002-09-24 Composition de resine radiosensible positive de type a amplification chimique

Country Status (7)

Country Link
US (1) US20040033438A1 (ja)
EP (1) EP1434091A4 (ja)
JP (1) JP2003107707A (ja)
KR (1) KR20040043106A (ja)
CN (1) CN1478220A (ja)
TW (1) TWI298425B (ja)
WO (1) WO2003029901A1 (ja)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4694686B2 (ja) * 2000-08-31 2011-06-08 東京応化工業株式会社 半導体素子製造方法
US7160666B2 (en) * 2002-03-06 2007-01-09 Fuji Photo Film Co., Ltd. Photosensitive resin composition
CN100576076C (zh) 2002-12-26 2009-12-30 东京应化工业株式会社 正性抗蚀剂组合物和形成抗蚀剂图案的方法
JP2004333548A (ja) 2003-04-30 2004-11-25 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物およびレジストパターン形成方法
EP1729176B1 (en) * 2004-03-24 2017-06-28 JSR Corporation Positive radiation-sensitive resin composition
KR100833839B1 (ko) * 2004-07-01 2008-06-02 도오꾜오까고오교 가부시끼가이샤 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법
KR20060085723A (ko) * 2005-01-25 2006-07-28 삼성전자주식회사 포토레지스트 조성물 및 이를 이용한 패턴 형성방법
EP1686424A3 (en) * 2005-01-27 2009-11-04 JSR Corporation Radiation-sensitive resin composition
JP5039622B2 (ja) 2007-03-30 2012-10-03 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法
JP4951464B2 (ja) 2007-10-26 2012-06-13 富士フイルム株式会社 ポジ型レジスト組成物及びこれを用いたパターン形成方法。
CN101900954B (zh) * 2009-06-01 2012-07-25 和舰科技(苏州)有限公司 一种监测显影机台曝光后烘烤热板斜率的方法
JP5677127B2 (ja) * 2011-02-18 2015-02-25 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法
US9872399B1 (en) 2016-07-22 2018-01-16 International Business Machines Corporation Implementing backdrilling elimination utilizing anti-electroplate coating

Citations (6)

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Publication number Priority date Publication date Assignee Title
JPH06289617A (ja) * 1993-03-30 1994-10-18 Nippon Zeon Co Ltd レジスト組成物
JPH075682A (ja) * 1993-03-30 1995-01-10 Nippon Zeon Co Ltd レジスト組成物
US5403695A (en) * 1991-04-30 1995-04-04 Kabushiki Kaisha Toshiba Resist for forming patterns comprising an acid generating compound and a polymer having acid decomposable groups
EP0898201A1 (en) * 1997-08-18 1999-02-24 JSR Corporation Radiation sensitive resin composition
EP0955562A1 (de) * 1998-05-07 1999-11-10 Siemens Aktiengesellschaft Chemisch verstärkter Resist
US6096478A (en) * 1998-02-23 2000-08-01 Nec Corporation Resist material for forming a chemically amplified negative type resist pattern and method of manufacturing a semiconductor device employing the resist pattern

Family Cites Families (14)

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Publication number Priority date Publication date Assignee Title
US4058400A (en) * 1974-05-02 1977-11-15 General Electric Company Cationically polymerizable compositions containing group VIa onium salts
US4491628A (en) * 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4933377A (en) * 1988-02-29 1990-06-12 Saeva Franklin D Novel sulfonium salts and the use thereof as photoinitiators
CA2019693A1 (en) * 1989-07-07 1991-01-07 Karen Ann Graziano Acid-hardening photoresists of improved sensitivity
EP0440374B1 (en) * 1990-01-30 1997-04-16 Wako Pure Chemical Industries Ltd Chemical amplified resist material
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
US5332650A (en) * 1991-09-06 1994-07-26 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition
US5389491A (en) * 1992-07-15 1995-02-14 Matsushita Electric Industrial Co., Ltd. Negative working resist composition
JPH0761979A (ja) * 1993-08-23 1995-03-07 Shin Etsu Chem Co Ltd ビスフェノール誘導体及びその製造方法
KR100230971B1 (ko) * 1994-01-28 1999-11-15 가나가와 지히로 술포늄 염 및 레지스트 조성물 (Sulfonium Salt and Resist Composition)
JP2964874B2 (ja) * 1994-06-10 1999-10-18 信越化学工業株式会社 化学増幅ポジ型レジスト材料
JP3955384B2 (ja) * 1998-04-08 2007-08-08 Ａｚエレクトロニックマテリアルズ株式会社 化学増幅型レジスト組成物
EP1179750B1 (en) * 2000-08-08 2012-07-25 FUJIFILM Corporation Positive photosensitive composition and method for producing a precision integrated circuit element using the same
US6924323B2 (en) * 2000-08-30 2005-08-02 Wako Pure Chemical Industries, Ltd. Sulfonium salt compound

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5403695A (en) * 1991-04-30 1995-04-04 Kabushiki Kaisha Toshiba Resist for forming patterns comprising an acid generating compound and a polymer having acid decomposable groups
JPH06289617A (ja) * 1993-03-30 1994-10-18 Nippon Zeon Co Ltd レジスト組成物
JPH075682A (ja) * 1993-03-30 1995-01-10 Nippon Zeon Co Ltd レジスト組成物
EP0898201A1 (en) * 1997-08-18 1999-02-24 JSR Corporation Radiation sensitive resin composition
US6136500A (en) * 1997-08-18 2000-10-24 Jsr Corporation Radiation sensitive resin composition
US6096478A (en) * 1998-02-23 2000-08-01 Nec Corporation Resist material for forming a chemically amplified negative type resist pattern and method of manufacturing a semiconductor device employing the resist pattern
EP0955562A1 (de) * 1998-05-07 1999-11-10 Siemens Aktiengesellschaft Chemisch verstärkter Resist

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP1434091A4 *

Also Published As

Publication number Publication date
EP1434091A4 (en) 2007-09-12
JP2003107707A (ja) 2003-04-09
KR20040043106A (ko) 2004-05-22
EP1434091A1 (en) 2004-06-30
US20040033438A1 (en) 2004-02-19
TWI298425B (en) 2008-07-01
CN1478220A (zh) 2004-02-25

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