WO2003027747A1 - Catadioptric reduction lens - Google Patents

Catadioptric reduction lens Download PDF

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Publication number
WO2003027747A1
WO2003027747A1 PCT/EP2002/010281 EP0210281W WO03027747A1 WO 2003027747 A1 WO2003027747 A1 WO 2003027747A1 EP 0210281 W EP0210281 W EP 0210281W WO 03027747 A1 WO03027747 A1 WO 03027747A1
Authority
WO
WIPO (PCT)
Prior art keywords
beamsplitter
projection lens
lens according
foregoing
ooooooooe
Prior art date
Application number
PCT/EP2002/010281
Other languages
English (en)
French (fr)
Inventor
Wilhelm Ulrich
David R. Shafer
Alexander Epple
Helmut Beierl
Aurelian Dodoc
Original Assignee
Carl Zeiss Smt Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Ag filed Critical Carl Zeiss Smt Ag
Priority to EP02799405A priority Critical patent/EP1430346A1/en
Priority to JP2003531236A priority patent/JP2005504337A/ja
Publication of WO2003027747A1 publication Critical patent/WO2003027747A1/en
Priority to US10/805,393 priority patent/US7136220B2/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G02B17/0892—Catadioptric systems specially adapted for the UV
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B17/00—Systems with reflecting surfaces, with or without refracting elements
    • G02B17/08—Catadioptric systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70225—Optical aspects of catadioptric systems, i.e. comprising reflective and refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems

Definitions

  • This system is largely characterized by the fact that no lens group is arranged between the concave mirror and beamsplitter, and that the concave mirror has a strong reduction effect, i.e., a strong image demagnification.
  • Longitudinal chromatic aberration (CHL) is primarily corrected by employing a highly convergent beam in the beamsplitter cube and may result in full achromatization of longitudinal chromatic aberration.
  • the beam ahead of the concave mirror, i.e., that undergoing its first pass of the beamsplitter is nearly, or substantially, collimated, while the beam following the concave mirror, i.e., that undergoing its second pass of the beamsplitter, is normally highly convergent.
  • the intermediate image lies outside the beamsplitter in order to avoid overheating of the beamsplitter material due to high radiant-energy densities. It may be provided to arrange a beamsplitter within a region where marginal-ray heights are low, where the marginal-ray heights therein should preferably be less than about 70 % of the marginal-ray heights at the concave mirror for both transits of the beamsplitter.
  • the positive refractive power within the optical near-field of the object plane may be provided in various manners.
  • Positive refractive power may be provided between the object plane and the beamsplitter by, for example, arranging a positive lens that, due to its proximity to the object plane, may have a small diameter, within that region. At most one positive lens is frequently provided within that region.
  • Arranging positive refractive power ahead of the entrance face of the beamsplitter may be utilized for reducing the divergence of radiation coming from object plane to the extent where a well-collimated beam results in order that variations in the angle of incidence of incident radiation will be relatively small in the vicinity of the beamsplitting surface.
  • no isolated lenses are arranged between the object plane and the beamsplitter. This allows keeping the designs in that particular section highly compact and arranging a beamsplitter close to their object plane, where marginal-ray heights are low. Positive refractive power may then be arranged within the space between the beamsplitter and the concave mirror, to be more specific, within the optical near-field of the object plane, in particular, at a location where the marginal-ray heights at the at least one positive lens are less than about 30 % of the marginal-ray heights at the concave mirror.
  • just one positive lens is provided.
  • Embodiments having at least one intermediate image also have at least one other field plane in addition to their object plane and image plane, as well as at least one conjugate stop plane in addition to their system stop, which means that additional degrees of freedom for incorporating effective aspherical surfaces exist.
  • the vicinity of the object plane 101 may be arranged between two optical elements, the first of which transforms the incident partially polarized light into circularly polarized light, while that following the reticle transforms that circularly polarized light into largely linearly polarized light.
  • These optical elements which maybe be laid out in a sandwich arrangement about the reticle, may, for example, be formed from quarter-wave plates.
  • Lithium fluoride has much lower intrinsic stress- birefringence coefficients than calcium fluoride, which may also be employed, which will allow optimizing the polarization characteristics of the beamsplitter design, which will be particularly beneficial in conjunction with the small beamsplitter volume employed here, which allows keeping the length of the optical path within the slightly birefringent material short, and thus keeping the associated retardations small.

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Lenses (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
PCT/EP2002/010281 2001-08-21 2002-09-13 Catadioptric reduction lens WO2003027747A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP02799405A EP1430346A1 (en) 2001-09-20 2002-09-13 Catadioptric reduction lens
JP2003531236A JP2005504337A (ja) 2001-09-20 2002-09-13 反射屈折縮小レンズ
US10/805,393 US7136220B2 (en) 2001-08-21 2004-03-22 Catadioptric reduction lens

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US32333001P 2001-09-20 2001-09-20
US60/323,330 2001-09-20
US33125001P 2001-11-13 2001-11-13
US33127601P 2001-11-13 2001-11-13
US60/331,276 2001-11-13
US60/331,250 2001-11-13

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US10/224,485 Continuation-In-Part US7317583B2 (en) 2001-08-21 2002-08-21 High numerical aperture projection system and method for microlithography

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/805,393 Continuation US7136220B2 (en) 2001-08-21 2004-03-22 Catadioptric reduction lens

Publications (1)

Publication Number Publication Date
WO2003027747A1 true WO2003027747A1 (en) 2003-04-03

Family

ID=27406266

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/010281 WO2003027747A1 (en) 2001-08-21 2002-09-13 Catadioptric reduction lens

Country Status (4)

Country Link
EP (1) EP1430346A1 (enrdf_load_stackoverflow)
JP (1) JP2005504337A (enrdf_load_stackoverflow)
TW (1) TWI226453B (enrdf_load_stackoverflow)
WO (1) WO2003027747A1 (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1260845A3 (de) * 2001-05-22 2004-01-02 Carl Zeiss Semiconductor Manufacturing Technologies Ag Katadioptrisches Reduktionsobjektiv
WO2004025349A1 (de) * 2002-09-09 2004-03-25 Carl Zeiss Smt Ag Katadioptrisches projektionsobjektiv sowie verfahren zur kompensation der intrinsischen doppelbrechung in einem solchen
EP1662325A3 (en) * 2004-11-18 2006-09-13 Cannon Kabushiki Kaisha Projection optical system and exposure apparatus having the same
US9097984B2 (en) 2005-06-02 2015-08-04 Carl Zeiss Smt Gmbh Microlithography projection objective

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1746463A2 (de) * 2005-07-01 2007-01-24 Carl Zeiss SMT AG Verfahren zum Korrigieren eines lithographischen Projektionsobjektivs und derartiges Projektionsobjektiv
DE102010021539B4 (de) * 2010-05-19 2014-10-09 Carl Zeiss Smt Gmbh Projektionsobjektiv mit Blenden
US8830590B2 (en) * 2012-05-30 2014-09-09 Ultratech, Inc. Unit magnification large-format catadioptric lens for microlithography

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0602923A1 (en) * 1992-12-14 1994-06-22 Canon Kabushiki Kaisha Exposure apparatus using a catadioptric projection system
US5742436A (en) * 1994-05-19 1998-04-21 Carl-Zeiss-Stiftung Maximum aperture catadioptric reduction objective for microlithography
EP0902329A1 (en) * 1997-09-12 1999-03-17 Nikon Corporation Catadioptric reduction optical system
US6081382A (en) * 1998-05-07 2000-06-27 Nikon Corporation Catadioptric reduction projection optical system
US6208473B1 (en) * 1997-04-30 2001-03-27 Nikon Corporation Catadioptric projection lens
EP1102100A2 (de) * 1999-11-12 2001-05-23 Carl Zeiss Katadioptrisches Objektiv mit physikalischem Strahlteiler

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0602923A1 (en) * 1992-12-14 1994-06-22 Canon Kabushiki Kaisha Exposure apparatus using a catadioptric projection system
US5742436A (en) * 1994-05-19 1998-04-21 Carl-Zeiss-Stiftung Maximum aperture catadioptric reduction objective for microlithography
US6208473B1 (en) * 1997-04-30 2001-03-27 Nikon Corporation Catadioptric projection lens
EP0902329A1 (en) * 1997-09-12 1999-03-17 Nikon Corporation Catadioptric reduction optical system
US6081382A (en) * 1998-05-07 2000-06-27 Nikon Corporation Catadioptric reduction projection optical system
EP1102100A2 (de) * 1999-11-12 2001-05-23 Carl Zeiss Katadioptrisches Objektiv mit physikalischem Strahlteiler

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1260845A3 (de) * 2001-05-22 2004-01-02 Carl Zeiss Semiconductor Manufacturing Technologies Ag Katadioptrisches Reduktionsobjektiv
US6717746B2 (en) 2001-05-22 2004-04-06 Carl Zeiss Semiconductor Manufacturing Technologies Ag Catadioptric reduction lens
US7006304B2 (en) 2001-05-22 2006-02-28 Carl Zeiss Smt Ag Catadioptric reduction lens
WO2004025349A1 (de) * 2002-09-09 2004-03-25 Carl Zeiss Smt Ag Katadioptrisches projektionsobjektiv sowie verfahren zur kompensation der intrinsischen doppelbrechung in einem solchen
EP1662325A3 (en) * 2004-11-18 2006-09-13 Cannon Kabushiki Kaisha Projection optical system and exposure apparatus having the same
US9097984B2 (en) 2005-06-02 2015-08-04 Carl Zeiss Smt Gmbh Microlithography projection objective
US10281824B2 (en) 2005-06-02 2019-05-07 Carl Zeiss Smt Gmbh Microlithography projection objective

Also Published As

Publication number Publication date
JP2005504337A (ja) 2005-02-10
EP1430346A1 (en) 2004-06-23
TWI226453B (en) 2005-01-11

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