WO2003019574A3 - Verfahren zum hochvolt-screening einer integrierten schaltung - Google Patents

Verfahren zum hochvolt-screening einer integrierten schaltung Download PDF

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Publication number
WO2003019574A3
WO2003019574A3 PCT/DE2002/001807 DE0201807W WO03019574A3 WO 2003019574 A3 WO2003019574 A3 WO 2003019574A3 DE 0201807 W DE0201807 W DE 0201807W WO 03019574 A3 WO03019574 A3 WO 03019574A3
Authority
WO
WIPO (PCT)
Prior art keywords
word
address bits
memory structure
complements
screening
Prior art date
Application number
PCT/DE2002/001807
Other languages
English (en)
French (fr)
Other versions
WO2003019574A2 (de
Inventor
Friedemann Eberhardt
Hans-Peter Klose
Original Assignee
Bosch Gmbh Robert
Friedemann Eberhardt
Hans-Peter Klose
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bosch Gmbh Robert, Friedemann Eberhardt, Hans-Peter Klose filed Critical Bosch Gmbh Robert
Publication of WO2003019574A2 publication Critical patent/WO2003019574A2/de
Publication of WO2003019574A3 publication Critical patent/WO2003019574A3/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger

Landscapes

  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

Es werden Massnahmen vorgeschlagen, mit denen sich die Wirksamkeit des Hochvolt (HV)-Screenings von integrierten Schaltungen mit einer Speicherstruktur und einem Word-Decoder deutlich verbessern lässt. Jeweils mehrere Speicherzellen (11) der Speicherstruktur (1) sind zu einem Wort zusammengefasst. Die Ausgänge des Word-Decoders (2) sind über wordlines (12) mit jeweils einem Wort der Speicherstruktur (1) verbunden. Der Word-Decoder (2) bestimmt mit Hilfe einer Schaltungslogik aus anliegenden Adressbits zunächst die Komplemente dieser Adressbits. Dann bestimmt der Word-Decoder (2) mit Hilfe der Schaltungslogik aus den Adressbits und deren Komplemen für jedes Wort der Speicherstruktur (1) ein wordline-Signal als 0 oder 1 und kann auf diese Weise ein Wort der Speicherstruktur (1) für einen Zugriff, d.h. für einen Lesevorgang und/oder einen Schreibvorgang, frei schalten. Beim HV-Screening wird die Versorgungsspannung bei verschiedenen, als Screening-Vektoren bezeichneten Schaltungszuständen erhöht. Erfindungsgemäss umfasst die Schaltungslogik wahlweise aktivierbare Mittel zum Gleichsetzen der Adressbits mit deren Komplementen, so dass zum Realisieren von Screening-Vektoren ein Testmodus aktiviert werden kann, bei dem alle Adressbits gleichgesetzt werden und die Komplemente der Adressbits den Adressbits ebenfalls gleichgesetzt werden.
PCT/DE2002/001807 2001-08-21 2002-05-18 Verfahren zum hochvolt-screening einer integrierten schaltung WO2003019574A2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10140853.6 2001-08-21
DE2001140853 DE10140853B4 (de) 2001-08-21 2001-08-21 Verfahren zum Hochvolt-Screening einer integrierten Schaltung

Publications (2)

Publication Number Publication Date
WO2003019574A2 WO2003019574A2 (de) 2003-03-06
WO2003019574A3 true WO2003019574A3 (de) 2003-05-22

Family

ID=7696067

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2002/001807 WO2003019574A2 (de) 2001-08-21 2002-05-18 Verfahren zum hochvolt-screening einer integrierten schaltung

Country Status (2)

Country Link
DE (1) DE10140853B4 (de)
WO (1) WO2003019574A2 (de)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4956816A (en) * 1986-03-31 1990-09-11 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory having improved testing circuitry
US5432744A (en) * 1992-12-07 1995-07-11 Nec Corporation Dynamic semiconductor memory circuit
EP0878804A2 (de) * 1997-05-15 1998-11-18 STMicroelectronics, Inc. Dynamische Mehrtransistorendirektzugriffspeicherarchitektur mit gleichzeitiger Auffrischung einer Vielzahl von Speicherzellen während einer Leseoperation
US5910921A (en) * 1997-04-22 1999-06-08 Micron Technology, Inc. Self-test of a memory device
US6205067B1 (en) * 1997-03-27 2001-03-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having burn-in mode operation stably accelerated
US6215712B1 (en) * 1997-05-30 2001-04-10 Fujitsu Limited Semiconductor memory device capable of multiple word-line selection and method of testing same

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000156096A (ja) * 1998-11-20 2000-06-06 Fujitsu Ltd 半導体記憶装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4956816A (en) * 1986-03-31 1990-09-11 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory having improved testing circuitry
US5432744A (en) * 1992-12-07 1995-07-11 Nec Corporation Dynamic semiconductor memory circuit
US6205067B1 (en) * 1997-03-27 2001-03-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor memory device having burn-in mode operation stably accelerated
US5910921A (en) * 1997-04-22 1999-06-08 Micron Technology, Inc. Self-test of a memory device
EP0878804A2 (de) * 1997-05-15 1998-11-18 STMicroelectronics, Inc. Dynamische Mehrtransistorendirektzugriffspeicherarchitektur mit gleichzeitiger Auffrischung einer Vielzahl von Speicherzellen während einer Leseoperation
US6215712B1 (en) * 1997-05-30 2001-04-10 Fujitsu Limited Semiconductor memory device capable of multiple word-line selection and method of testing same

Also Published As

Publication number Publication date
WO2003019574A2 (de) 2003-03-06
DE10140853B4 (de) 2004-11-11
DE10140853A1 (de) 2003-03-20

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